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Saitoh et al., 2005 - Google Patents

4H-SiC epitaxial growth on SiC substrates with various off-angles

Saitoh et al., 2005

Document ID
1519055216873450110
Author
Saitoh H
Kimoto T
Publication year
Publication venue
Materials Science Forum

External Links

Snippet

Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled (15o-45o) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
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    • H01L21/0237—Materials
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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