[go: up one dir, main page]

Hahn et al., 1981 - Google Patents

Influence of oxidation parameters on atomic roughness at the Si‐SiO2 interface

Hahn et al., 1981

Document ID
3586334001843284589
Author
Hahn P
Henzler M
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

The quality of metal-oxide-semiconductor (MOS) devices depends among other parameters strongly on the quality of the interface between silicon and silicon dioxide. Whereas the chemical composition (like migration of alkali ions) and electrical properties (interface states …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide

Similar Documents

Publication Publication Date Title
Hahn et al. Influence of oxidation parameters on atomic roughness at the Si‐SiO2 interface
Hahn et al. The Si–SiO2 interface: Correlation of atomic structure and electrical properties
Liu et al. Optimization and characterization of III–V surface cleaning
Picraux Disorder annealing in III–V semiconductors after ion implantation at low temperatures
Chang Some properties of plasma-grown GaAs oxides
Edwards et al. Compensation implants in 6H–SiC
Chang et al. Plasma oxidation of aluminum film on GaAs—A study by Auger spectroscopy and transmission electron microscopy
Yaron et al. Quantized electron accumulation layers on ZnO surfaces produced by low‐energy hydrogen‐ion implantation
Markwitz et al. Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing
Seck et al. Study of Ge bonding and distribution in plasma oxides of Si 1− x Ge x alloys
Lau et al. Ultrashallow depth profiling using ozone oxidation and HF etching of silicon
Ray Plasma oxidation of silicon
Stevie SRF niobium characterization using SIMS and FIB-TEM
Earwaker et al. Determination of the fluorine distribution in porous silicon using nuclear reaction, XPS and Auger analyses.
Moon et al. Growth and characterization of thin SiN films grown on Si by electron cyclotron resonance nitrogen plasma treatment
Tsai et al. β‐Chromium Plating from a Chromic Acid Electrolyte Containing Formic Acid
Krivanek et al. A combined high‐resolution electron microscopy, x‐ray photoemission spectroscopy, and electrical properties study of the InP–SiO2 interface
Markwitz et al. Characterisation of thin sputtered silicon nitride films by NRA, ERDA, RBS and SEM
Hirota et al. Etchant dependence of surface reconstructions of GaAs surfaces prepared by ultrasonic‐running de‐ionized water treatment
Awadelkarim et al. Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures
Simpson et al. Planarization Processes and Applications: II. B 2 O 3/P 2 O 5 Doped GeO2‐SiO2 Glasses
Strausser et al. An Auger electron spectroscopy study of silicon spectra from silicon monoxide, silicon dioxide and silicon nitride
Henkel et al. Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry
Alnot et al. Study of Reactive Ion Etching of the Si3 N 4/GaAs Interface in CF 4 Plasmas by X‐Ray Photoelectron Spectroscopy and X‐Ray Photoelectron Diffraction
Fuchs et al. Transition From Single-Layer to Double-Layer Steps on GaAs (110) Prepared by Molecular Beam Epitaxy