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Hahn et al., 1984 - Google Patents

The Si–SiO2 interface: Correlation of atomic structure and electrical properties

Hahn et al., 1984

Document ID
13074007464475701182
Author
Hahn P
Henzler M
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

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Snippet

The roughness at the Si–SiO2 interface has been determined quantitatively on an atomic scale by SPA‐LEED (spot profile analysis of low energy electron diffraction) in ultrahigh vacuum after removal of the oxide. At the Si–SiO2 interface the steps are randomly …
Continue reading at pubs.aip.org (other versions)

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/314—Inorganic layers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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