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Isoaho et al., 2022 - Google Patents

Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions

Isoaho et al., 2022

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Document ID
3288420799249875209
Author
Isoaho R
Tukiainen A
Puutio J
Hietalahti A
Reuna J
Fihlman A
Anttola E
Keränen M
Aho A
Guina M
Publication year
Publication venue
Solar Energy Materials and Solar Cells

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High performance narrow-bandgap GaInNAsSb solar cells are instrumental for the development of lattice-matched GaAs-based solar cells with more than four junctions. To this end a comprehensive optimization process including the effects of growth temperature, As/III …
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