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Leong et al., 2016 - Google Patents

Growth of 1‐eV GaNAsSb‐based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

Leong et al., 2016

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Document ID
6985020281310448863
Author
Leong N
Tan K
Loke W
Wicaksono S
Li D
Yoon S
Sharma P
Milakovich T
Bulsara M
Fitzgerald G
Publication year
Publication venue
Progress in Photovoltaics: Research and Applications

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Snippet

We report the performance of 1‐eV GaNAsSb‐based photovoltaic samples grown on a Si substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) ratios. The light current–voltage curve and spectral response of the samples were …
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