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Webb et al., 1999 - Google Patents

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

Webb et al., 1999

Document ID
3173648411164453964
Author
Webb J
Tang H
Rolfe S
Bardwell J
Publication year
Publication venue
Applied physics letters

External Links

Snippet

A method of growing semi-insulating GaN epilayers by ammonia molecular beam epitaxy through intentional doping with carbon is reported. Thick GaN layers of high resistivity are an important element in GaN-based heterostructure field-effect transistors. A methane ion …
Continue reading at pubs.aip.org (other versions)

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