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Breckenridge et al., 2018 - Google Patents

Electrical and structural characterization of Si implanted homoepitaxially grown AlN

Breckenridge et al., 2018

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Document ID
12768042355482619059
Author
Breckenridge M
Tweedie J
Hernandez-Balderrama L
Kirste R
Klump A
Collazo R
Reddy P
Sitar Z
Publication year
Publication venue
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID)

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AlN is an attractive material for UV optoelectronics and high-power device applications; however, obtaining high n-type conductivity is still a challenge. Ion implantation may provide an avenue to realize electrical conductivities suitable for device operation. A novel …
Continue reading at par.nsf.gov (PDF) (other versions)

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    • H01L21/02612—Formation types
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
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