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Kim et al., 2006 - Google Patents

Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Kim et al., 2006

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Document ID
18020248998162890398
Author
Kim H
Ok I
Zhang M
Lee T
Zhu F
Yu L
Lee J
Koveshnikov S
Tsai W
Tokranov V
Yakimov M
Oktyabrsky S
Publication year
Publication venue
Applied Physics Letters

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The authors present depletion-mode n-channel GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a TaN gate electrode, a thin Hf O 2 gate dielectric, and a thin germanium (Ge) interfacial passivation layer (IPL). Depletion-mode MOSFET on the …
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