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Zhao et al., 2009 - Google Patents

High performance In0. 7Ga0. 3As metal-oxide-semiconductor transistors with mobility> 4400 cm2/V s using InP barrier layer

Zhao et al., 2009

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Document ID
14468903759172312726
Author
Zhao H
Chen Y
Yum J
Wang Y
Goel N
Lee J
Publication year
Publication venue
Applied Physics Letters

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We have investigated device performance for In 0.7 Ga 0.3 As and In 0.53 Ga 0.47 As metal- oxide-semiconductor transistors (MOSFETs) with and without InP barrier layer using atomic layer deposited Al 2 O 3 gate dielectric. InP barrier layer was found to provide higher …
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