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박세환, 2014 - Google Patents

3-Dimensional NAND flash memory having Tied Bit-line and Ground Select Transistor (TiGer)

박세환, 2014

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Document ID
12637155560222845523
Author
박세환
Publication year

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Snippet

The demand for flash memory in mobile devices such as smart phone and pads, and digital cameras, portable music players is constantly increasing. Moreover, many hard disk drives in desktop computer are replaced by the solid state drives. This trend accelerates the scaling …
Continue reading at s-space.snu.ac.kr (PDF) (other versions)

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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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    • H01L27/112—Read-only memory structures [ROM] and multistep manufacturing processes therefor
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    • H01L27/11517—Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
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    • H01L27/11578—Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H01L27/1158—Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
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    • H01L27/11551—Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H01L27/11553—Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
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    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112—Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115—Electrically programmable read-only memories; Multistep manufacturing processes therefor
    • H01L27/11563—Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM
    • H01L27/11573—Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the peripheral circuit region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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