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Le Royer et al., 2009 - Google Patents

Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

Le Royer et al., 2009

Document ID
11570684321963397965
Author
Le Royer C
Mayer F
Publication year
Publication venue
2009 10th international conference on ultimate integration of silicon

External Links

Snippet

The goal of this paper is to present and to analyze the tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-ldquokT/qrdquo swing device and review the issues that TFET has to overcome …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Le Royer et al. Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture
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