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Park et al., 2002 - Google Patents

Boron penetration and thermal instability of p+ polycrystalline-Si/ZrO 2/SiO 2/n-Si metal-oxide-semiconductor structures

Park et al., 2002

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Document ID
11355330649246855856
Author
Park D
Lim K
Cho H
Kim J
Yang J
Ko J
Yeo I
Park J
de Waard H
Tuominen M
Publication year
Publication venue
Journal of applied physics

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We report boron penetration and thermal instability of p+ polycrystalline-Si (poly-Si)/ZrO 2 (100 Å)/SiO 2 (∼ 7 Å)/n-Si metal-oxide-semiconductor (MOS) structures. The flatband voltage shift (ΔV FB) of the p+ poly-Si/ZrO 2/SiO 2/n-Si MOS capacitor as determined by …
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