[go: up one dir, main page]

Kryliouk et al., 1999 - Google Patents

Growth of GaN single crystal substrates

Kryliouk et al., 1999

Document ID
11300087555957696518
Author
Kryliouk O
Reed M
Dann T
Anderson T
Chai B
Publication year
Publication venue
Materials Science and Engineering: B

External Links

Snippet

Self-separating single crystal GaN substrates were grown by hydride-metalorganic vapor phase epitaxy (H-MOVPE) on closely lattice-matched LiGaO2 substrates. A critical process for obtaining high quality GaN films on LiGaO2 was the initial surface nitridation of the oxide …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Similar Documents

Publication Publication Date Title
Park et al. Free-standing GaN substrates by hydride vapor phase epitaxy
US8030101B2 (en) Process for producing an epitaxial layer of galium nitride
EP1977028B1 (en) Process for growth of low dislocation density gan
US6350666B2 (en) Method and apparatus for producing group-III nitrides
JP5099763B2 (en) Substrate manufacturing method and group III nitride semiconductor crystal
JP3929017B2 (en) Semiconductor layer growth method
Golan et al. Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire
Iwaya et al. Realization of crack-free and high-quality thick AlxGa1− xN for UV optoelectronics using low-temperature interlayer
Misaki et al. Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy
Kryliouk et al. Growth of GaN single crystal substrates
Kryliouk et al. Large area GaN substrates
Lu et al. Investigation of GaN layer grown on Si (1 1 1) substrate using an ultrathin AlN wetting layer
Duan et al. Growth and characterization of GaN on LiGaO2
Lee et al. Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN
Wang et al. Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH3
Kryliouk et al. GaN Substrates: Growth and Characterization
Zhang et al. Modulated growth of thick GaN with hydride vapor phase epitaxy
Park et al. Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy
Chou et al. Growth of nonpolar m-plane GaN (1 0− 1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy
Chen et al. Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
Usui Growth of thick GaN layers by hydride vapor‐phase epitaxy
JP2008528414A (en) Method for producing c-plane oriented GaN or AlxGa1-xN substrate and method for using c-plane oriented GaN or AlxGa1-xN substrate
Usikov et al. Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire‐based templates
Kryliouk et al. SINGLE CRYSTAL GaN SUBSTRATE GROWN by HYDRIDE-METAL ORGANIC VAPOR PHASE EPITAXY (H-MOVPE)
Wakahara et al. Heteroepitaxial Growth of GaN on y-Al20iSi Substrate by Organometallic Vapor Phase Epitaxy