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ZA200505759B - Fast switching power insulated gate semiconductor device - Google Patents

Fast switching power insulated gate semiconductor device

Info

Publication number
ZA200505759B
ZA200505759B ZA200505759A ZA200505759A ZA200505759B ZA 200505759 B ZA200505759 B ZA 200505759B ZA 200505759 A ZA200505759 A ZA 200505759A ZA 200505759 A ZA200505759 A ZA 200505759A ZA 200505759 B ZA200505759 B ZA 200505759B
Authority
ZA
South Africa
Prior art keywords
semiconductor device
switching power
insulated gate
fast switching
gate semiconductor
Prior art date
Application number
ZA200505759A
Other languages
English (en)
Inventor
Visser Barend
De Jager Ocker Cornelis
Original Assignee
Univ Northwest
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Northwest filed Critical Univ Northwest
Priority to ZA200505759A priority Critical patent/ZA200505759B/xx
Publication of ZA200505759B publication Critical patent/ZA200505759B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
ZA200505759A 2003-01-21 2005-07-19 Fast switching power insulated gate semiconductor device ZA200505759B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ZA200505759A ZA200505759B (en) 2003-01-21 2005-07-19 Fast switching power insulated gate semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200300552 2003-01-21
ZA200505759A ZA200505759B (en) 2003-01-21 2005-07-19 Fast switching power insulated gate semiconductor device

Publications (1)

Publication Number Publication Date
ZA200505759B true ZA200505759B (en) 2007-02-28

Family

ID=32772476

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200505759A ZA200505759B (en) 2003-01-21 2005-07-19 Fast switching power insulated gate semiconductor device

Country Status (8)

Country Link
US (2) US20060118832A1 (ja)
EP (1) EP1586120B1 (ja)
JP (2) JP5362955B2 (ja)
CN (1) CN100508211C (ja)
ES (1) ES2578678T3 (ja)
HK (1) HK1091321A1 (ja)
WO (1) WO2004066395A2 (ja)
ZA (1) ZA200505759B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039897B2 (en) * 2008-12-19 2011-10-18 Fairchild Semiconductor Corporation Lateral MOSFET with substrate drain connection
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
US9356015B2 (en) * 2012-08-28 2016-05-31 Sharp Kabushiki Kaisha Composite semiconductor device
US10957791B2 (en) * 2019-03-08 2021-03-23 Infineon Technologies Americas Corp. Power device with low gate charge and low figure of merit

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883413A (en) * 1972-09-25 1975-05-13 Avco Corp Ozone generator using pulsed electron beam and decaying electric field
US4038165A (en) * 1975-03-13 1977-07-26 Union Carbide Corporation Corona reaction method
SE456291B (sv) * 1980-02-22 1988-09-19 Rca Corp Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen
US4438356A (en) * 1982-03-24 1984-03-20 International Rectifier Corporation Solid state relay circuit employing MOSFET power switching devices
US4491807A (en) * 1982-05-20 1985-01-01 Rca Corporation FET Negative resistance circuits
US4471245A (en) * 1982-06-21 1984-09-11 Eaton Corporation FET Gating circuit with fast turn-on capacitor
JPS6038877A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 絶縁ゲ−ト半導体装置
US4713220A (en) * 1985-04-22 1987-12-15 National Distillers And Chemical Corporation Ozonator power supply
US4736121A (en) * 1985-09-10 1988-04-05 Sos Microelettronica S.p.A. Charge pump circuit for driving N-channel MOS transistors
US4683387A (en) * 1985-12-03 1987-07-28 The United States Of America As Represented By The Secretary Of The Air Force Quadrature switch apparatus for multi mode phase shift drivers
US4695936A (en) * 1986-02-07 1987-09-22 Astec Components, Ltd. Switching mode power supply start circuit
FR2596931B1 (fr) * 1986-04-04 1993-03-26 Thomson Csf Multiplicateur de tension continue pouvant etre integre a une structure semi-conductrice
US4764857A (en) * 1987-05-06 1988-08-16 Zenith Electronics Corporation Power supply start-up circuit with high frequency transformer
GB8713388D0 (en) * 1987-06-08 1987-07-15 Philips Electronic Associated Semiconductor device
US4912335A (en) * 1988-03-07 1990-03-27 Dionics Inc. Means for rapid charging and dynamic discharging of a capacitively charged electrical device
US4869881A (en) * 1988-05-03 1989-09-26 Pillar Technologies, Inc. Ozone generator system
US4873460A (en) * 1988-11-16 1989-10-10 California Institute Of Technology Monolithic transistor gate energy recovery system
JP2975646B2 (ja) * 1989-06-30 1999-11-10 テキサス インスツルメンツ インコーポレイテツド 集積デバイス
US5016070A (en) 1989-06-30 1991-05-14 Texas Instruments Incorporated Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors
JPH03138981A (ja) * 1989-10-25 1991-06-13 Hitachi Ltd 半導体素子
WO1991011826A1 (en) * 1990-02-01 1991-08-08 Quigg Fred L Mosfet structure having reduced gate capacitance and method of forming same
JPH03228376A (ja) * 1990-02-02 1991-10-09 Nippon Telegr & Teleph Corp <Ntt> 縦形二重拡散ｍｏｓｆｅｔ
JPH03286619A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 絶縁ゲート形半導体装置のゲート駆動回路および該回路を用いたフラッシュ制御装置
JPH05122035A (ja) * 1991-05-10 1993-05-18 Fuji Electric Co Ltd 駆動電源内蔵型半導体装置
US5504449A (en) * 1992-04-09 1996-04-02 Harris Corporation Power driver circuit
JPH05335582A (ja) * 1992-05-27 1993-12-17 Omron Corp 縦型ｍｏｓｆｅｔ装置およびその製造方法
US5392187A (en) * 1992-08-12 1995-02-21 North Carolina State University At Raleigh Integrated circuit power device with transient responsive current limiting means
JPH08321602A (ja) * 1995-05-26 1996-12-03 Fuji Electric Co Ltd Ｍｉｓ半導体装置およびその制御方法
US5977588A (en) * 1997-10-31 1999-11-02 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
DE19905421B4 (de) * 1999-02-10 2005-07-28 Semikron Elektronik Gmbh Leistungshalbleiterbauelement mit reduzierter Millerkapazität
US6870405B2 (en) * 1999-02-24 2005-03-22 Potchefstroom University For Christian Higher Education Method for driving an insulated gate semiconductor device using a short duration pulse
US6291298B1 (en) * 1999-05-25 2001-09-18 Advanced Analogic Technologies, Inc. Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses
US6441652B1 (en) * 1999-06-24 2002-08-27 Koninklijke Philips Electroanics N.V. High efficiency high frequency resonant gate driver for power converter
JP3928837B2 (ja) * 1999-09-13 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路装置
KR20010040186A (ko) * 1999-10-27 2001-05-15 인터실 코포레이션 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술
DE10038177A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
JP4322414B2 (ja) * 2000-09-19 2009-09-02 株式会社ルネサステクノロジ 半導体装置
US6589830B1 (en) * 2000-09-20 2003-07-08 Fairchild Semiconductor Corporation Self-aligned process for fabricating power MOSFET with spacer-shaped terraced gate
GB0028031D0 (en) * 2000-11-17 2001-01-03 Koninkl Philips Electronics Nv Trench-gate field-effect transistors and their manufacture
US6870220B2 (en) * 2002-08-23 2005-03-22 Fairchild Semiconductor Corporation Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
US6573560B2 (en) * 2001-11-06 2003-06-03 Fairchild Semiconductor Corporation Trench MOSFET with reduced Miller capacitance
GB0130754D0 (en) * 2001-12-21 2002-02-06 Lucas Industries Ltd Switch control circuit
DE10211543B4 (de) * 2002-03-15 2005-06-30 Infineon Technologies Ag Schaltungsanordnung mit einem Feldeffekttransistor und Verfahren zum Betrieb der Schaltungsanordnung
DE10212149B4 (de) * 2002-03-19 2007-10-04 Infineon Technologies Ag Transistoranordnung mit Schirmelektrode außerhalb eines aktiven Zellenfeldes und reduzierter Gate-Drain-Kapazität

Also Published As

Publication number Publication date
JP2006516365A (ja) 2006-06-29
EP1586120B1 (en) 2016-04-27
JP5362955B2 (ja) 2013-12-11
JP2013179344A (ja) 2013-09-09
CN1836337A (zh) 2006-09-20
US20080203457A1 (en) 2008-08-28
WO2004066395A2 (en) 2004-08-05
WO2004066395A3 (en) 2004-09-02
US8063426B2 (en) 2011-11-22
US20060118832A1 (en) 2006-06-08
EP1586120A2 (en) 2005-10-19
HK1091321A1 (en) 2007-01-12
CN100508211C (zh) 2009-07-01
ES2578678T3 (es) 2016-07-29

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