WO2025158784A1 - High-frequency module and communication device - Google Patents

Abstract

A high-frequency module (1) comprises: a module substrate (90); a filter (30) disposed on the module substrate (90) and having a passband including a transmission band of a band (A) corresponding to a first power class; a filter (31) disposed on the module substrate (90) and having a passband including a reception band of the band (A); and a filter (34 and/or 35) disposed on the module substrate (90) and having a passband including at least a portion of a band (C) corresponding to a second power class defined by a maximum output power lower than the first power class. The filter (34 and/or 35) is disposed between the filters (30 and 31) in a plan view of the module substrate (90).

Description

High frequency module and communication device

The present invention relates to a high-frequency module and a communication device.

In 3GPP (registered trademark) (3rd Generation Partnership Project) and other organizations, use in frequency division duplex (FDD) bands with power classes (e.g., power classes 2, 1.5, 1, etc.) defined by higher maximum output power than conventional methods is being considered.

Japanese Patent Application Laid-Open No. 2017-063315

However, if the high-frequency circuit described in Patent Document 1 allows a higher maximum output power in the FDD band than conventional circuits, the reception characteristics in the FDD band may deteriorate.

The present invention therefore provides a high-frequency module and communication device that can suppress degradation of reception characteristics in the FDD band.

A high-frequency circuit according to one aspect of the present invention comprises a module substrate; a first filter disposed on the module substrate and having a passband including the transmit band of a first FDD band corresponding to a first power class; a second filter disposed on the module substrate and having a passband including the receive band of the first FDD band; and a third filter disposed on the module substrate and having a passband including at least a portion of a second band corresponding to a second power class defined by a maximum output power lower than the first power class, the third filter being disposed between the first and second filters when viewed from above on the module substrate.

A communication device according to one aspect of the present invention comprises a signal processing circuit configured to process high-frequency signals, and the above-described high-frequency module configured to transmit high-frequency signals between the signal processing circuit and an antenna.

According to the present invention, it is possible to suppress deterioration of reception characteristics in the FDD band.

FIG. 1 is a circuit configuration diagram of a communication device according to the first embodiment. FIG. 2 is a plan view of the high-frequency module according to the first embodiment. FIG. 3 is a plan view of the high-frequency module according to the first embodiment. FIG. 4 is a cross-sectional view of the high-frequency module according to the first embodiment. FIG. 5 is a plan view of a high-frequency module according to a first modification of the first embodiment. FIG. 6 is a plan view of a high-frequency module according to a second modification of the first embodiment. FIG. 7 is a circuit configuration diagram of a communication device according to the second embodiment. FIG. 8 is a plan view of the high-frequency module according to the second embodiment. FIG. 9 is a plan view of the high-frequency module according to the second embodiment. FIG. 10 is a cross-sectional view of a high-frequency module according to the second embodiment.

Embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, component arrangements and connection forms shown in the following embodiments are merely examples and are not intended to limit the present invention.

Note that each figure is a schematic diagram in which emphasis, omissions, or adjustments to the proportions have been made as appropriate to illustrate the present invention, and is not necessarily an exact illustration, and may differ from the actual shape, positional relationship, and proportions. In each figure, the same reference numerals are used to designate substantially identical components, and redundant explanations may be omitted or simplified.

In the following figures, the x-axis and y-axis are axes that are perpendicular to each other on a plane parallel to the main surface of the module substrate. Specifically, if the module substrate has a rectangular shape in a plan view, the x-axis is parallel to the first side of the module substrate, and the y-axis is parallel to the second side that is perpendicular to the first side of the module substrate. The z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

In the following circuit configuration descriptions, "connected" not only refers to direct connection via connection terminals and/or wiring conductors, but also includes electrical connection via other circuit elements. "A is switchably connected to B" means that the connection and disconnection between A and B can be switched, and that A is connected to B via a switch. Note that "A is connected to B" includes "A is switchably connected to B." "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and that C is arranged in series in the path connecting A and B. "Path connecting A and B" means a path made up of conductors that electrically connect A to B.

"Terminal" means the point where a conductor within an element terminates. Note that if the impedance of the conductor between elements is sufficiently low, terminal is interpreted as any point on the conductor between elements or the entire conductor, not just a single point.

The "filter passband" is defined as the portion of the frequency spectrum transmitted by the filter, within which the output power is not attenuated by more than 3 dB below the maximum output power. Therefore, the upper and lower ends of a bandpass filter's passband are identified as the higher and lower frequencies of the two points where the output power is attenuated by 3 dB below the maximum output power.

"Transmission band" refers to the frequency band used for transmission in a communication device, and "reception band" refers to the frequency band used for reception in a communication device. For example, in an FDD band, different frequency bands (uplink band and downlink band) are used as the transmission band and reception band. Also, for example, in a time division duplex (TDD) band, the same frequency band is used for the transmission band and reception band.

"Power class" is a classification of the output power of user equipment, specified by the maximum output power, with the smaller the power class value, the higher the maximum output power allowed. For example, 3GPP specifies power classes 1, 1.5, 2, and 3. Specifically, power class 1 specifies the maximum output power as 31 dBm. power class 1.5 specifies the maximum output power as 29 dBm. power class 2 specifies the maximum output power as 26 dBm. power class 3 specifies the maximum output power as 23 dBm.

The maximum output power of a UE is defined as the maximum output power at the antenna end. The maximum output power of a UE is measured using a method defined by 3GPP or similar. For example, the maximum output power is measured by measuring the radiated power at the antenna. Instead of measuring the radiated power, the maximum output power of the antenna can also be measured by providing a terminal near the antenna and connecting a measuring instrument (such as a spectrum analyzer) to that terminal.

"Band corresponding to a power class" refers to a frequency band that can use that power class, and is defined in standards. For example, 3GPP is considering n2, n5, n8, n13, n25, n26, n28, n66, n71, and n85 as FDD bands for 5G NR that correspond to power class 2.

"A component is disposed on a substrate" includes a component being disposed on the main surface of the substrate, and a component being disposed within the substrate. "A component is disposed on the main surface of the substrate" includes a component being disposed in contact with the main surface of the substrate, as well as a component being disposed above the main surface without contacting the main surface (for example, a component being stacked on top of another component that is disposed in contact with the main surface). "A component is disposed on the main surface of the substrate" may also include a component being disposed in a recess formed in the main surface. "A component is disposed within the substrate" includes a component being encapsulated within a module substrate, as well as a component being entirely disposed between the two main surfaces of the substrate but partially not covered by the substrate, and a component being partially disposed within the substrate.

"A is located between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A. "A is closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A (B) and C" means the length of the shortest line segment among the multiple line segments connecting any point in A (B) and any point in C.

"Planar view of the module substrate" means viewing an object by orthogonal projection onto a plane parallel to the main surface of the module substrate from above the module substrate. In other words, "planar view of the module substrate" means viewing an object by orthogonal projection onto the xy plane from the positive side of the z axis.

Terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "rectangle," and numerical ranges do not only express strict meanings, but also include substantially equivalent ranges, for example, including an error of a few percent.

(Embodiment 1)
A first embodiment will be described. A communication device 5 according to this embodiment can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in UEs in a cellular network (also referred to as a mobile network), such as mobile phones, smartphones, tablet computers, and wearable devices. In another example, the communication device 5 can be implemented to provide wireless connectivity to Internet of Things (IoT) sensor devices, medical/healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, the communication device 5 can be implemented to provide wireless connectivity in a wireless access point or a wireless hotspot.

The circuit configuration of the communication device 5 and high-frequency module 1 according to this embodiment will be described with reference to Figure 1. Figure 1 is a circuit configuration diagram of the communication device 5 according to this embodiment.

Note that FIG. 1 is an exemplary circuit configuration, and the communication device 5 and the radio frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 and the radio frequency module 1 provided below should not be interpreted as limiting.

[1.1 Circuit configuration of communication device 5]
First, the circuit configuration of a communication device 5 according to this embodiment will be described with reference to Fig. 1. The communication device 5 includes a high-frequency module 1, an antenna 2, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

The high-frequency module 1 can transmit high-frequency signals between the antenna 2 and the RFIC 3. The circuit configuration of the high-frequency module 1 will be described later.

Antenna 2 is connected to antenna connection terminal 100 of high-frequency module 1. Antenna 2 can receive high-frequency signals from high-frequency module 1 and transmit them to the outside of communication device 5. Antenna 2 can also receive high-frequency signals from the outside of communication device 5 and output them to high-frequency module 1. Antenna 2 does not have to be included in communication device 5. Furthermore, communication device 5 may have one or more antennas in addition to antenna 2.

The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 can process the transmission signal input from the BBIC 4 by up-conversion or the like, and output the high-frequency transmission signal generated by this signal processing to the high-frequency module 1. Furthermore, the RFIC 3 can process the high-frequency reception signal input via the reception path of the high-frequency module 1 by down-conversion or the like, and output the reception signal generated by this signal processing to the BBIC 4. The RFIC 3 may also have a control unit that controls the switches and power amplifiers of the high-frequency module 1. Note that some or all of the functions of the RFIC 3 as a control unit may be included outside the RFIC 3, and may be included in the BBIC 4 or the high-frequency module 1, for example.

The BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signals transmitted by the high-frequency module 1. Signals processed by the BBIC4 include, for example, image signals for image display and/or audio signals for calls via a speaker. The BBIC4 does not necessarily have to be included in the communication device 5.

[1.2 Circuit configuration of high-frequency module 1]
Next, the circuit configuration of a high-frequency module 1 according to this embodiment will be described with reference to Fig. 1. The high-frequency module 1 includes a power amplifier 10, a low-noise amplifier 20, filters 30, 31, 32, 33, 34, 35, 36, and 37, matching circuits 40, 41, 42, 43, 44, and 45, switch circuits 50, 51, and 52, an antenna connection terminal 100, a high-frequency input terminal 110, and a high-frequency output terminal 120.

The antenna connection terminal 100 is an external connection terminal of the high-frequency module 1. The antenna connection terminal 100 is connected to the antenna 2 outside the high-frequency module 1, and is connected to the switch circuit 50 inside the high-frequency module 1. This allows the high-frequency module 1 to supply transmission signals to the antenna 2 and receive reception signals from the antenna 2 via the antenna connection terminal 100.

The radio frequency input terminal 110 is an external connection terminal of the radio frequency module 1. The radio frequency input terminal 110 is connected to the RFIC 3 outside the radio frequency module 1, and is connected to the power amplifier 10 inside the radio frequency module 1. This allows the radio frequency module 1 to supply the transmission signal received from the RFIC 3 via the radio frequency input terminal 110 to the power amplifier 10.

The radio frequency output terminal 120 is an external connection terminal of the radio frequency module 1. The radio frequency output terminal 120 is connected to the RFIC 3 outside the radio frequency module 1, and is connected to the low noise amplifier 20 inside the radio frequency module 1. This allows the radio frequency module 1 to supply the received signal amplified by the low noise amplifier 20 to the RFIC 3 via the radio frequency output terminal 120.

The power amplifier 10 (PA) is connected between the radio frequency input terminal 110 and the filters 30, 32, 34, and 36. Specifically, the input terminal of the power amplifier 10 is connected to the radio frequency input terminal 110. Meanwhile, the output terminal of the power amplifier 10 is switchably connected to the filters 30, 32, 34, and 36 via a matching circuit 44 and a switch circuit 51. The power amplifier 10 can amplify the transmission signal supplied from the RFIC 3 via the radio frequency input terminal 110 using power supplied from a power supply (not shown).

Note that part or all of the power amplifier 10 does not have to be included in the high-frequency module 1. In this case, part or all of the power amplifier 10 may be connected between the RFIC 3 and the high-frequency input terminal 110, or may be included in the RFIC 3.

The low-noise amplifier 20 (LNA) is connected between the filters 31, 33, 35, and 37 and the high-frequency output terminal 120. Specifically, the input terminal of the low-noise amplifier 20 is switchably connected to the filters 31, 33, 35, and 37 via the matching circuit 45 and the switch circuit 52. Meanwhile, the output terminal of the low-noise amplifier 20 is connected to the high-frequency output terminal 120. The low-noise amplifier 20 can amplify the received signal that has passed through the filter 31, 33, 35, or 37 using power supplied from a power supply (not shown).

Note that part or all of the low-noise amplifier 20 does not have to be included in the high-frequency module 1. In this case, part or all of the low-noise amplifier 20 may be connected between the high-frequency output terminal 120 and the RFIC 3, or may be included in the RFIC 3.

Filter 30 (A-Tx) is an example of a first filter, and has a passband that includes the transmission band of band A. Filter 30 is connected between antenna connection terminal 100 and power amplifier 10. Specifically, one end of filter 30 is switchably connected to antenna connection terminal 100 via matching circuit 40 and switch circuit 50. Meanwhile, the other end of filter 30 is switchably connected to power amplifier 10 via switch circuit 51 and matching circuit 44. Filter 30 has power resistance corresponding to a first power class, which is defined by a higher maximum output power.

The first power class is a power class that allows a higher maximum output power than the second power class. Examples of the first power class include power class 2, power class 1.5, or power class 1. If a new power class is defined in the standard, that new power class may be used as the first power class.

Filter 31 (A-Rx) is an example of a second filter, and has a passband that includes the receive band of band A. Filter 31 is connected between antenna connection terminal 100 and low-noise amplifier 20. Specifically, one end of filter 31 is switchably connected to antenna connection terminal 100 via matching circuit 40 and switch circuit 50. Meanwhile, the other end of filter 31 is switchably connected to low-noise amplifier 20 via switch circuit 52 and matching circuit 45.

The filter 32 (B-Tx) has a passband that includes the transmission band of band B. The filter 32 is connected between the antenna connection terminal 100 and the power amplifier 10. Specifically, one end of the filter 32 is switchably connected to the antenna connection terminal 100 via a matching circuit 41 and a switch circuit 50. Meanwhile, the other end of the filter 32 is switchably connected to the power amplifier 10 via a switch circuit 51 and a matching circuit 44. The filter 32 has power resistance corresponding to the first power class. Note that the filter 32 does not necessarily have to be included in the high-frequency module 1.

The filter 33 (B-Rx) has a passband that includes the reception band of band B. The filter 33 is connected between the antenna connection terminal 100 and the low-noise amplifier 20. Specifically, one end of the filter 33 is switchably connected to the antenna connection terminal 100 via a matching circuit 41 and a switch circuit 50. Meanwhile, the other end of the filter 33 is switchably connected to the low-noise amplifier 20 via a switch circuit 52 and a matching circuit 45. The filter 33 does not necessarily have to be included in the high-frequency module 1.

The filter 34 (C-Tx) is an example of a third or fourth filter, and has a passband that includes the transmission band of band C. The filter 34 is connected between the antenna connection terminal 100 and the power amplifier 10. Specifically, one end of the filter 34 is switchably connected to the antenna connection terminal 100 via a matching circuit 42 and a switch circuit 50. Meanwhile, the other end of the filter 34 is switchably connected to the power amplifier 10 via a switch circuit 51 and a matching circuit 44. The filter 34 has a power handling capability corresponding to a second power class, which is defined by a lower maximum output power. In other words, the filter 34 does not need to have a power handling capability corresponding to the first power class.

The second power class is a power class defined by a maximum output power lower than that of the first power class. For example, power class 3 is used as the second power class. If a new power class is defined in the standard, that new power class may be used as the second power class.

Filter 35 (C-Rx) is an example of a third or fourth filter, and has a passband that includes the receive band of band C. Filter 35 is connected between antenna connection terminal 100 and low-noise amplifier 20. Specifically, one end of filter 35 is switchably connected to antenna connection terminal 100 via matching circuit 42 and switch circuit 50. Meanwhile, the other end of filter 35 is switchably connected to low-noise amplifier 20 via switch circuit 52 and matching circuit 45. Note that it is sufficient that one of filters 34 and 35 is included in high-frequency module 1; the other of filters 34 and 35 does not have to be included in high-frequency module 1.

The filter 36 (D-Tx) has a passband that includes the transmission band of band D. The filter 36 is connected between the antenna connection terminal 100 and the power amplifier 10. Specifically, one end of the filter 36 is switchably connected to the antenna connection terminal 100 via a matching circuit 43 and a switch circuit 50. Meanwhile, the other end of the filter 36 is switchably connected to the power amplifier 10 via a switch circuit 51 and a matching circuit 44. The filter 36 has a power resistance corresponding to the second power class. In other words, the filter 36 does not need to have a power resistance corresponding to the first power class. Note that the filter 36 does not need to be included in the high-frequency module 1.

The filter 37 (D-Rx) has a passband that includes the receive band of band D. The filter 37 is connected between the antenna connection terminal 100 and the low-noise amplifier 20. Specifically, one end of the filter 37 is switchably connected to the antenna connection terminal 100 via a matching circuit 43 and a switch circuit 50. Meanwhile, the other end of the filter 37 is switchably connected to the low-noise amplifier 20 via a switch circuit 52 and a matching circuit 45. Note that the filter 37 does not necessarily have to be included in the high-frequency module 1.

Bands A to D are frequency bands for communication systems built using Radio Access Technology (RAT). Bands A to D are pre-defined by standardization organizations (e.g., 3GPP and the Institute of Electrical and Electronics Engineers (IEEE)). Examples of communication systems include 5GNR (5th Generation New Radio) systems, LTE (Long Term Evolution) systems, and WLAN (Wireless Local Area Network) systems.

Band A is an example of a first FDD band, and is an FDD band corresponding to the first power class. For example, n8 or n26 for 5G NR is used as Band A. However, Band A is not limited to these. For example, an LTE band may be used as Band A.

Band B is an FDD band corresponding to the first power class. A frequency band different from Band A may be used as Band B, such as n8 or n26 for 5G NR. However, Band B is not limited to these. For example, an LTE band may be used as Band B.

Band C is an example of the second band, and is a band corresponding to the second power class. In other words, band C is a band that does not correspond to the first power class. Band C may be any of an FDD band, a TDD band, an SUL (Supplementary Uplink) band, and an SDL (Supplementary Downlink) band. If band C is a TDD band, filters 34 and 35 may be integrated into a single transmit/receive filter. If band C is an SUL band, filter 35 may not be included in high-frequency module 1. If band C is an SDL band, filter 34 may not be included in high-frequency module 1. For example, n12, n13, or n71 for 5G NR is used as band C. However, band C is not limited to these. For example, an LTE band may be used as band C.

Band D is a band corresponding to the second power class. In other words, band D is a band that does not correspond to the first power class. Band D may be any of an FDD band, a TDD band, an SUL band, and an SDL band. If band D is a TDD band, filters 36 and 37 may be integrated into a single transmit/receive filter. If band D is an SUL band, filter 37 may not be included in high-frequency module 1. If band D is an SDL band, filter 36 may not be included in high-frequency module 1. A frequency band different from band C is used as band D, such as n12, n13, or n71 for 5G NR. Band D is not limited to these. For example, an LTE band may be used as band D.

The matching circuit (matching network) 40 (MN(ANT)) is connected between the switch circuit 50 and the filters 30 and 31, and can achieve impedance matching between the switch circuit 50 and the filters 30 and 31. The matching circuit 40 may include, for example, an inductor and/or a capacitor (so-called shunt inductor and/or shunt capacitor) connected between the path connecting the switch circuit 50 and the filters 30 and 31 and ground. The matching circuit 40 may also include, for example, an inductor and/or a capacitor (so-called series inductor and/or series capacitor) connected between the switch circuit 50 and the filters 30 and 31. Note that the matching elements included in the matching circuit 40 are not limited to inductors and/or capacitors. The matching circuit 40 does not have to be included in the high-frequency module 1.

The matching circuit (matching network) 41 (MN(ANT)) is connected between the switch circuit 50 and the filters 32 and 33, and can achieve impedance matching between the switch circuit 50 and the filters 32 and 33. The matching circuit 41 may include, for example, a shunt inductor and/or a shunt capacitor, and the matching circuit 41 may include a series inductor and/or a series capacitor. Note that the matching elements included in the matching circuit 41 are not limited to inductors and/or capacitors. Furthermore, the matching circuit 41 does not have to be included in the high-frequency module 1.

The matching circuit (matching network) 42 (MN(ANT)) is connected between the switch circuit 50 and the filters 34 and 35, and can achieve impedance matching between the switch circuit 50 and the filters 34 and 35. The matching circuit 42 may include, for example, a shunt inductor and/or a shunt capacitor, or may include a series inductor and/or a series capacitor. Note that the matching elements included in the matching circuit 42 are not limited to inductors and/or capacitors. Furthermore, the matching circuit 42 does not have to be included in the high-frequency module 1.

The matching circuit (matching network) 43 (MN(ANT)) is connected between the switch circuit 50 and the filters 36 and 37, and can achieve impedance matching between the switch circuit 50 and the filters 36 and 37. The matching circuit 43 may include, for example, a shunt inductor and/or a shunt capacitor, or may include a series inductor and/or a series capacitor. Note that the matching elements included in the matching circuit 43 are not limited to inductors and/or capacitors. Furthermore, the matching circuit 43 does not have to be included in the high-frequency module 1.

The matching circuit (matching network) 44 (MN(PA)) is connected between the switch circuit 51 and the power amplifier 10, and can achieve impedance matching between the switch circuit 51 and the power amplifier 10. The matching circuit 44 may include, for example, a shunt inductor and/or a shunt capacitor, or may include a series inductor and/or a series capacitor. Note that the matching elements included in the matching circuit 44 are not limited to inductors and/or capacitors. Furthermore, the matching circuit 44 does not have to be included in the high-frequency module 1.

The matching circuit (matching network) 45 (MN (LNA)) is connected between the switch circuit 52 and the low-noise amplifier 20, and can achieve impedance matching between the switch circuit 52 and the low-noise amplifier 20. The matching circuit 45 may include, for example, a shunt inductor and/or a shunt capacitor, or may include a series inductor and/or a series capacitor. Note that the matching elements included in the matching circuit 45 are not limited to inductors and/or capacitors. Furthermore, the matching circuit 45 does not have to be included in the high-frequency module 1.

Switch circuit 50 (SW(ANT)) is an example of a first switch circuit and is connected between antenna connection terminal 100 and filters 30-37. Specifically, switch circuit 50 includes a common terminal 500 and selection terminals 501, 502, 503, and 504. Common terminal 500 is an example of a first common terminal and is connected to antenna connection terminal 100. Selection terminal 501 is an example of a first selection terminal and is connected to filters 30 and 31 via matching circuit 40. Selection terminal 502 is connected to filters 32 and 33 via matching circuit 41. Selection terminal 503 is an example of a second selection terminal and is connected to filters 34 and 35 via matching circuit 42. Selection terminal 504 is connected to filters 36 and 37 via matching circuit 43.

In this connection configuration, the switch circuit 50 can exclusively connect the common terminal 500 to the selection terminals 501 to 504, for example, based on a control signal from the RFIC 3. In other words, in the switch circuit 50, the common terminal 500 is selectively connected to the selection terminals 501 to 504. The switch circuit 50 is configured, for example, as an SP4T type switch circuit. Note that the switch circuit 50 does not have to be included in the high-frequency module 1.

Switch circuit 51 (SW(PA)) is an example of a second switch circuit and is connected between filters 30, 32, 34, and 36 and power amplifier 10. Specifically, switch circuit 51 includes a common terminal 510 and selection terminals 511, 512, 513, and 514. Common terminal 510 is an example of a second common terminal and is connected to power amplifier 10 via matching circuit 44. Selection terminal 511 is an example of a third selection terminal and is connected to filter 30. Selection terminal 512 is connected to filter 32. Selection terminal 513 is an example of a fourth selection terminal and is connected to filter 34. Selection terminal 514 is connected to filter 36.

In this connection configuration, the switch circuit 51 can exclusively connect the common terminal 510 to the selection terminals 511 to 514, for example, based on a control signal from the RFIC 3. In other words, in the switch circuit 51, the common terminal 510 is selectively connected to the selection terminals 511 to 514. The switch circuit 51 is configured, for example, as an SP4T type switch circuit. Note that the switch circuit 51 does not need to be included in the high-frequency module 1. In this case, the high-frequency module 1 may include multiple power amplifiers connected to the filters 30, 32, 34, and 36, respectively.

Switch circuit 52 (SW (LNA)) is an example of a third switch circuit and is connected between low-noise amplifier 20 and filters 31, 33, 35, and 37. Specifically, switch circuit 52 includes common terminal 520 and selection terminals 521, 522, 523, and 524. Common terminal 520 is an example of a third common terminal and is connected to low-noise amplifier 20 via matching circuit 45. Selection terminal 521 is an example of a fifth selection terminal and is connected to filter 31. Selection terminal 522 is connected to filter 33. Selection terminal 523 is an example of a sixth selection terminal and is connected to filter 35. Selection terminal 524 is connected to filter 37.

In this connection configuration, the switch circuit 52 can exclusively connect the common terminal 520 to the selection terminals 521 to 524, for example, based on a control signal from the RFIC 3. In other words, the switch circuit 52 selectively connects the common terminal 520 to the selection terminals 521 to 524. The switch circuit 52 is configured, for example, as an SP4T type switch circuit. Note that the switch circuit 52 does not need to be included in the high-frequency module 1. In this case, the high-frequency module 1 may include multiple low-noise amplifiers connected to the filters 31, 33, 35, and 37, respectively.

[1.3 Mounting example of high-frequency module 1]
Next, an example of mounting the high-frequency module 1 having the circuit configuration described above will be described with reference to FIGS. 2 to 4. FIG. 2 is a plan view of the high-frequency module 1 according to this embodiment. FIG. 3 is a plan view of the high-frequency module 1 according to this embodiment, seen through the main surface 90b of the module substrate 90 from the positive side of the z-axis. FIG. 4 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in FIG. 4 is taken along line iv-iv in FIGS. 2 and 3.

In Figures 2 to 4, some components are labeled with an indicative label (such as "PA") to make it easier to understand the relative placement of the components, but actual components may not be labeled with such labels. Also, in Figures 2 and 3, the resin members 91 and 92 that cover multiple circuit components and the shielding layer 93 that covers the resin members 91 and 92 are not shown.

Note that Figures 2 to 4 show one implementation example of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

In addition to the multiple circuit components shown in FIG. 1, the high-frequency module 1 includes a module substrate 90, resin members 91 and 92, a shielding layer 93, and multiple external connection terminals 94.

The module substrate 90 has opposing principal surfaces 90a and 90b. The principal surface 90a is sometimes called the upper surface or front surface. The principal surface 90b is sometimes called the lower surface or back surface. Wiring, via conductors, etc. are formed within the module substrate 90 and on the principal surfaces 90a and 90b, but are not shown in the figures.

The module substrate 90 may be, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

The resin member 91 covers at least a portion of the main surface 90a of the module substrate 90 and the circuit components on the main surface 90a. Note that the resin member 91 does not cover the top surfaces of the filters 30 and 32 and the duplexers 300 and 301; the top surfaces of the filters 30 and 32 and the duplexers 300 and 301 are exposed from the resin member 91 and are in contact with the shielding layer 93. The resin member 91 may be made of, for example, epoxy resin, but is not limited to, this material. The resin member 91 functions to ensure the reliability of the circuit components on the main surface 90a, such as mechanical strength and moisture resistance. Note that the resin member 91 does not necessarily have to be included in the high-frequency module 1.

The resin member 92 covers at least a portion of the main surface 90b of the module substrate 90 and the circuit components on the main surface 90b. The resin member 92 does not have to cover the top surface of the integrated circuit 200. In other words, the top surface of the integrated circuit 200 may be exposed from the resin member 92. The resin member 92 may be made of, for example, epoxy resin, but is not limited to this material. The resin member 92 has the function of ensuring the reliability of the circuit components on the main surface 90b, such as mechanical strength and moisture resistance. The resin member 92 does not necessarily have to be included in the high-frequency module 1.

The shielding layer 93 is a thin metal film formed, for example, by sputtering. As shown in Figure 4, the shielding layer 93 covers the surfaces of the resin members 91 and 92. The shielding layer 93 also covers the top surfaces of the filters 30 and 32 and the duplexers 300 and 301. The shielding layer 93 is connected to ground, and can prevent external noise from entering the high-frequency module 1 and noise generated in the high-frequency module 1 from interfering with other modules or other devices.

A plurality of external connection terminals 94 are arranged on the main surface 90b of the module substrate 90. The plurality of external connection terminals 94 include the antenna connection terminal 100, the radio frequency input terminal 110, and the radio frequency output terminal 120 shown in FIG. 1. Furthermore, the plurality of external connection terminals 94 includes a ground terminal connected to ground. Each of the plurality of external connection terminals 94 is electrically connected to an input/output terminal and/or a ground terminal on a motherboard (not shown) arranged in the negative direction of the z-axis of the radio frequency module 1. The plurality of external connection terminals 94 may be, but are not limited to, copper electrodes or solder electrodes.

Here, we will explain the circuit components arranged on the main surfaces 90a and 90b of the module substrate 90, with reference to Figures 2 to 4.

The power amplifier 10, filters 30-37, and matching circuits 40-45 are arranged on the main surface 90a of the module substrate 90.

The power amplifier 10 can be configured as a heterojunction bipolar transistor (HBT) and can be manufactured using semiconductor materials. Examples of semiconductor materials that can be used include silicon germanium (SiGe) and gallium arsenide (GaAs). The amplifying transistors of the power amplifier 10 are not limited to HBTs. For example, the power amplifier 10 may be configured as a high electron mobility transistor (HEMT) or a metal-semiconductor field effect transistor (MESFET). In this case, gallium nitride (GaN) or silicon carbide (SiC) may be used as the semiconductor material.

Filters 30 to 37 are implemented as surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC resonator filters, or dielectric resonator filters, or any combination thereof. For example, filters 30 and 32 may be BAW filters with higher power handling capabilities, and the remaining filters may be SAW filters. However, filters 30 to 37 are not limited to these.

Filters 30 and 31 are acoustic wave filters mounted on separate piezoelectric substrates. As shown in Figure 4, the top surface of filter 30 (the main surface on the positive side of the z-axis) is exposed from resin member 91 and is in contact with shielding layer 93. Note that the top surface of filter 30 does not have to be in contact with shielding layer 93.

Filters 32 and 33 are acoustic wave filters mounted on separate piezoelectric substrates. Similar to filter 30, the top surface of filter 32 is exposed from resin member 91 and is in contact with shielding layer 93. Note that the top surface of filter 30 does not have to be in contact with shielding layer 93.

Filters 34 and 35 are acoustic wave filters mounted on a single piezoelectric substrate and are called duplexer 300. Note that filters 34 and 35 may also be mounted on separate piezoelectric substrates, meaning they do not have to be duplexers.

As shown in FIG. 2, the duplexer 300 is disposed between the filters 30 and 31 in a plan view of the module substrate 90. As shown in FIG. 4, the top surface of the duplexer 300 is exposed from the resin member 91 and is in contact with the shielding layer 93. Note that the top surface of the duplexer 300 does not have to be in contact with the shielding layer 93.

Filters 36 and 37 are acoustic wave filters mounted on a single piezoelectric substrate and are called duplexers 301. Note that filters 36 and 37 may also be mounted on separate piezoelectric substrates, meaning they do not have to be duplexers.

As shown in FIG. 2, duplexer 301 is disposed between filters 32 and 33 in a plan view of module substrate 90. The top surface of duplexer 301, like duplexer 300, is exposed from resin member 91 and is in contact with shielding layer 93. Note that duplexer 301 does not have to be disposed between filters 32 and 33, and the top surface of duplexer 301 does not have to be in contact with shielding layer 93.

Matching circuits 40-45 are implemented, for example, as chip inductors and/or chip capacitors. Chip inductors and/or chip capacitors refer to surface mount devices (SMDs) that constitute inductors and/or capacitors. Note that the implementation of matching circuits 40-45 is not limited to chip inductors and/or chip capacitors. For example, matching circuits 40-45 may be implemented using wiring patterns formed on module substrate 90.

An integrated circuit 200 including a low-noise amplifier 20 and switch circuits 50-52 is arranged on the main surface 90b of the module substrate 90.

The integrated circuit 200 (IC) can be manufactured using semiconductor materials, such as single crystal silicon, gallium nitride (GaN), or silicon carbide (SiC).

The low-noise amplifier 20 and switch circuits 50-52 can be configured using field-effect transistors (FETs). Note that the amplifying transistors of the low-noise amplifier 20 and the switches included in the switch circuits 50-52 are not limited to FETs. For example, some or all of the low-noise amplifier 20 and switch circuits 50-52 may be configured using bipolar transistors.

Note that the low-noise amplifier 20 and switch circuits 50-52 do not have to be included in a single integrated circuit. For example, the low-noise amplifier 20 and switch circuits 50 and 52 may be included in an integrated circuit separate from the switch circuit 51. In this case, the switch circuit 51 may be included in the same integrated circuit as a control circuit (not shown) that controls the power amplifier 10.

Note that the mounting of the high-frequency module 1 is not limited to the mounting examples shown in Figures 2 to 4. For example, the high-frequency module 1 may be mounted on one side of the module substrate 90, rather than on both sides of the module substrate 90.

[1.4 Summary]
As described above, the high-frequency module 1 according to this embodiment includes a module substrate 90, a filter 30 disposed on the module substrate 90 and having a passband that includes the transmission band of band A corresponding to the first power class, a filter 31 disposed on the module substrate 90 and having a passband that includes the reception band of band A, and filters 34 and/or 35 disposed on the module substrate 90 and having a passband that includes at least a part of band C corresponding to the second power class defined by a maximum output power lower than that of the first power class, and filters 34 and/or 35 are disposed between filters 30 and 31 when the module substrate 90 is viewed in plan.

In this way, filters 34 and/or 35 are placed between filters 30 and 31. This makes it possible to suppress heat propagation from filter 30 to filter 31, and to prevent deterioration of filter 31's characteristics due to temperature increases in filter 31. Furthermore, filters 34 and/or 35 can suppress capacitive coupling (electric field coupling) and/or inductive coupling (magnetic field coupling) between filters 30 and 31, improving isolation between the transmit path and receive path of band A. In particular, filter 30 of band A, which corresponds to the first power class that allows a higher maximum output power, generates more heat and is more susceptible to coupling, so suppressing heat propagation and coupling between filters 30 and 31 has a significant effect on improving the receive characteristics of band A signals.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a resin member 91 that covers at least a portion of the module substrate 90 and the filters 30, 31, and 34 and/or 35, and a shielding layer 93 that covers at least a portion of the resin member 91, and the filters 34 and/or 35 may be in contact with the shielding layer 93.

As a result, filters 34 and/or 35, which are placed between filters 30 and 31, come into contact with the shield layer 93, so heat generated in filter 30 can be effectively discharged via filters 34 and/or 35 and the shield layer 93, more effectively suppressing heat transmission from filter 30 to filter 31.

Furthermore, for example, in the radio frequency module 1 according to this embodiment, band C may be the FDD band, and the radio frequency module 1 may include a filter 34 having a pass band that includes the transmit band of band C and a filter 35 having a pass band that includes the receive band of band C, and filters 34 and 35 may be disposed between filters 30 and 31 when viewed from above on the module substrate 90.

In this way, both filters 34 and 35 are placed between filters 30 and 31, thereby increasing the effect of suppressing heat transfer and bonding between filters 30 and 31.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a switch circuit 50 disposed on the module substrate 90 and switchably connecting the antenna connection terminal 100 to the filters 30, 31, 34, and 35, and the switch circuit 50 may include a common terminal 500 connected to the antenna connection terminal 100, a selection terminal 501 connected to the filters 30 and 31, and a selection terminal 503 connected to the filters 34 and 35.

As a result, filters 30 and 31 and filters 34 and 35 are switchably connected to antenna connection terminal 100 by switch circuit 50, thereby improving the transmission and reception characteristics of signals in bands A and B.

Furthermore, for example, the radio frequency module 1 according to this embodiment may further include a power amplifier 10 disposed on the module substrate 90 and connected to the filters 30 and 34, and a switch circuit 51 disposed on the module substrate 90 and switchably connecting the power amplifier 10 to the filters 30 and 34, and the switch circuit 51 may include a common terminal 510 connected to the power amplifier 10, a selection terminal 511 connected to the filter 30, and a selection terminal 513 connected to the filter 34.

This allows the power amplifier 10 to be used to amplify transmission signals for both bands A and C, reducing the number of power amplifiers and making the high-frequency module 1 more compact.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a low-noise amplifier 20 disposed on the module substrate 90 and connected to the filters 31 and 35, and a switch circuit 52 disposed on the module substrate 90 and switchably connecting the low-noise amplifier 20 to the filters 31 and 35, and the switch circuit 52 may include a common terminal 520 connected to the low-noise amplifier 20, a selection terminal 521 connected to the filter 31, and a selection terminal 523 connected to the filter 35.

This allows the low-noise amplifier 20 to be used to amplify received signals for both bands A and C, reducing the number of low-noise amplifiers and making the high-frequency module 1 more compact.

Furthermore, for example, in the high-frequency module 1 according to this embodiment, band A may be n8 or n26 for 5G NR, and band C may be n12, n13, or n71 for 5G NR.

This makes it possible to improve the reception characteristics of n8 or n26 signals in 5G NR.

Furthermore, the communication device 5 according to this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and the antenna 2.

This allows the communication device 5 to achieve the same effects as the high-frequency module 1.

(First Modification of First Embodiment)
Next, a first modification of the first embodiment will be described. In this modification, the main difference from the first embodiment is the arrangement of the filters 30 and 32 on the main surface 90a of the module substrate 90. Below, this modification will be described with reference to the drawings, focusing on the differences from the first embodiment.

[1.5 Mounting example of high-frequency module 1]
An example of mounting the high-frequency module 1 according to this modification will be described with reference to FIG. 5 . FIG. 5 is a plan view of the high-frequency module 1 according to this modification. In FIG. 5 , some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components. However, the actual components may not be labeled with such symbols. Also, in FIG. 5 , resin members 91 and 92 that cover multiple circuit components and a shielding layer 93 that covers the resin members 91 and 92 are not shown.

Note that Figure 5 shows one implementation example of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

As shown in FIG. 5, in this modified example, filters 30 and 32 are arranged near the outer periphery of module substrate 90. Specifically, in a plan view of module substrate 90, filter 30 is closer to the outer periphery of module substrate 90 than filter 31, and filter 32 is closer to the outer periphery of module substrate 90 than filter 33. More specifically, distance D1 between filter 30 and the outer periphery of module substrate 90 is shorter than distance D2 between filter 31 and the outer periphery of module substrate 90. Furthermore, distance D3 between filter 32 and the outer periphery of module substrate 90 is shorter than distance D4 between filter 33 and the outer periphery of module substrate 90.

Note that filter 32 does not have to be positioned near the outer periphery of module substrate 90. In other words, filter 32 may be farther from the outer periphery of module substrate 90 than filter 33.

1.6 Summary
As described above, in the high-frequency module 1 according to this modification, the filter 30 may be closer to the outer periphery of the module substrate 90 than the filter 31 when viewed from above.

This improves heat dissipation from filter 30 to the outside of high-frequency module 1, and suppresses temperature increases in filter 30. Therefore, heat transfer from filter 30 to filter 31 can be further suppressed, and deterioration of the characteristics of filter 31 due to temperature increases in filter 31 can be further suppressed.

(Modification 2 of Embodiment 1)
Next, a second modification of the first embodiment will be described. In this modification, the main difference from the first embodiment is the arrangement of the filters 30 to 37 on the main surface 90a of the module substrate 90. Below, this modification will be described with reference to the drawings, focusing on the differences from the first embodiment.

[1.7 Mounting example of high-frequency module 1]
An example of mounting the high-frequency module 1 according to this modification will be described with reference to FIG. 6 . FIG. 6 is a plan view of the high-frequency module 1 according to this modification. In FIG. 6 , some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components. However, the actual components may not be labeled with such symbols. Also, in FIG. 6 , resin members 91 and 92 that cover multiple circuit components and a shielding layer 93 that covers the resin members 91 and 92 are not shown.

Note that Figure 6 shows one implementation example of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

As shown in FIG. 6, in a plan view of the module substrate 90, the duplexer 300 is disposed between the filter 30 and the power amplifier 10, and the duplexer 301 is disposed between the filter 32 and the power amplifier 10. Note that the duplexer 301 does not necessarily have to be disposed between the filter 32 and the power amplifier 10.

Furthermore, as in Variation 1, filters 30 and 32 are arranged near the outer periphery of module substrate 90. Specifically, in a plan view of module substrate 90, filter 30 is closer to the outer periphery of module substrate 90 than filter 31, and filter 32 is closer to the outer periphery of module substrate 90 than filter 33. More specifically, distance D1 between filter 30 and the outer periphery of module substrate 90 is shorter than distance D2 between filter 31 and the outer periphery of module substrate 90. Furthermore, distance D3 between filter 32 and the outer periphery of module substrate 90 is shorter than distance D4 between filter 33 and the outer periphery of module substrate 90.

In this modified example, filters 30 and/or 32 do not have to be positioned near the outer periphery of module substrate 90. In other words, filter 30 may be farther from the outer periphery of module substrate 90 than filter 31, and filter 32 may be farther from the outer periphery of module substrate 90 than filter 33.

1.8 Summary
As described above, the high-frequency module 1 according to this modification may further include a power amplifier 10 disposed on the module substrate 90 and connected to the filter 30, and the filters 34 and/or 35 may be disposed between the power amplifier 10 and the filter 30 in a plan view of the module substrate 90.

In this way, filters 34 and/or 35, which generate less heat, are placed between power amplifier 10 and filter 30, which generate more heat, thereby suppressing the temperature rise of filter 30. This further suppresses heat transfer from filter 30 to filter 31, and further suppresses deterioration of the characteristics of filter 31 due to a rise in temperature of filter 31.

(Embodiment 2)
Next, a second embodiment will be described. This embodiment differs from the first embodiment mainly in that the filters (filters 34 and 35 in the first embodiment) arranged between filter 30 and power amplifier 10 are different from the filters arranged between filters 30 and 31. A high-frequency module 1A according to this embodiment will be described below with reference to the drawings.

The communication device 5A according to this embodiment can be used to provide wireless connectivity, similar to the communication device 5 according to embodiment 1. Note that the communication device 5A is similar to the communication device 5, except that it includes a high-frequency module 1A instead of the high-frequency module 1. Therefore, a description of the circuit configuration of the communication device 5A will be omitted, and the circuit configuration of the high-frequency module 1A will be described with reference to Figure 7. Figure 7 is a circuit configuration diagram of the communication device 5A according to this embodiment.

Note that FIG. 7 is an exemplary circuit configuration, and the communication device 5A and high-frequency module 1A can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted as limiting.

[2.1 Circuit Configuration of High-Frequency Module 1A]
The high-frequency module 1A includes a power amplifier 10, a low-noise amplifier 20, filters 30, 31, 32, 33, 34, 35, 36, 37, 38, and 39, matching circuits 40, 41, 42, 43, 44, 45, and 46, switch circuits 50A, 51A, and 52A, an antenna connection terminal 100, a high-frequency input terminal 110, and a high-frequency output terminal 120.

Filter 38 (E-Tx) is an example of a fifth filter, and has a passband that includes the transmission band of band E. Filter 38 is connected between antenna connection terminal 100 and power amplifier 10. Specifically, one end of filter 38 is switchably connected to antenna connection terminal 100 via matching circuit 46 and switch circuit 50A. Meanwhile, the other end of filter 38 is switchably connected to power amplifier 10 via switch circuit 51A and matching circuit 44. Filter 38 has a power handling capability corresponding to a second power class, which is defined by a lower maximum output power. In other words, filter 38 does not need to have a power handling capability corresponding to the first power class.

Filter 39 (E-Rx) is an example of a fifth filter, and has a passband that includes the receive band of band E. Filter 39 is connected between the antenna connection terminal 100 and the low-noise amplifier 20. Specifically, one end of filter 39 is switchably connected to the antenna connection terminal 100 via a matching circuit 46 and a switch circuit 50A. Meanwhile, the other end of filter 39 is switchably connected to the low-noise amplifier 20 via a switch circuit 52A and a matching circuit 45. Note that it is sufficient that one of filters 38 and 39 is included in the high-frequency module 1A; the other of filters 38 and 39 does not have to be included in the high-frequency module 1A.

Similar to bands A to D, band E is a frequency band for a communication system built using a RAT. Band E is an example of a third band and corresponds to the second power class. In other words, band E does not correspond to the first power class. Band E may be any of an FDD band, a TDD band, an SUL band, and an SDL band. If band E is a TDD band, filters 38 and 39 may be integrated into a single transmit/receive filter. If band E is an SUL band, filter 39 may not be included in the high-frequency module 1A. If band E is an SDL band, filter 38 may not be included in the high-frequency module 1A. A frequency band different from bands C and D is used as band E, such as n12, n13, or n71 for 5G NR. Band E is not limited to these. For example, an LTE band may be used as band E.

The matching circuit (matching network) 46 (MN(ANT)) is connected between the switch circuit 50A and the filters 38 and 39, and can achieve impedance matching between the switch circuit 50A and the filters 38 and 39. The matching circuit 46 may include, for example, a shunt inductor and/or a shunt capacitor, or may include a series inductor and/or a series capacitor. Note that the matching elements included in the matching circuit 46 are not limited to inductors and/or capacitors. Furthermore, the matching circuit 46 does not have to be included in the high-frequency module 1A.

Switch circuit 50A (SW(ANT)) is an example of a first switch circuit and is connected between antenna connection terminal 100 and filters 30 to 39. Specifically, switch circuit 50A includes a common terminal 500 and selection terminals 501, 502, 503, 504, and 505. Selection terminal 505 is connected to filters 38 and 39 via matching circuit 46.

In this connection configuration, the switch circuit 50A can exclusively connect the common terminal 500 to the selection terminals 501 to 505, for example, based on a control signal from the RFIC 3. In other words, in the switch circuit 50A, the common terminal 500 is selectively connected to the selection terminals 501 to 505. The switch circuit 50A is configured, for example, as an SP5T type switch circuit. Note that the switch circuit 50A does not have to be included in the high-frequency module 1A.

Switch circuit 51A (SW(PA)) is an example of a second switch circuit and is connected between filters 30, 32, 34, 36, and 38 and power amplifier 10. Specifically, switch circuit 51A includes a common terminal 510 and selection terminals 511, 512, 513, 514, and 515. Selection terminal 515 is connected to filter 38.

In this connection configuration, the switch circuit 51A can exclusively connect the common terminal 510 to the selection terminals 511 to 515, for example, based on a control signal from the RFIC 3. In other words, in the switch circuit 51A, the common terminal 510 is selectively connected to the selection terminals 511 to 515. The switch circuit 51A is configured, for example, as an SP5T type switch circuit. Note that the switch circuit 51A does not need to be included in the high-frequency module 1A. In this case, the high-frequency module 1A may have multiple power amplifiers connected to the filters 30, 32, 34, 36, and 38, respectively.

Switch circuit 52A (SW(LNA)) is an example of a third switch circuit and is connected between low-noise amplifier 20 and filters 31, 33, 35, 37, and 39. Specifically, switch circuit 52A includes common terminal 520 and selection terminals 521, 522, 523, 524, and 525. Selection terminal 525 is connected to filter 39.

In this connection configuration, the switch circuit 52A can exclusively connect the common terminal 520 to the selection terminals 521 to 525, for example, based on a control signal from the RFIC 3. In other words, in the switch circuit 52A, the common terminal 520 is selectively connected to the selection terminals 521 to 525. The switch circuit 52A is configured, for example, as an SP5T type switch circuit. Note that the switch circuit 52A does not need to be included in the high-frequency module 1A. In this case, the high-frequency module 1A may have multiple low-noise amplifiers connected to the filters 31, 33, 35, 37, and 39, respectively.

[2.2 Mounting example of high-frequency module 1A]
Next, a mounting example of a high-frequency module 1A having the circuit configuration described above will be described with reference to FIGS. 8 to 10. FIG. 8 is a plan view of the high-frequency module 1A according to this embodiment. FIG. 9 is a plan view of the high-frequency module 1A according to this embodiment, seen through the main surface 90b of the module substrate 90 from the positive side of the z-axis. FIG. 10 is a cross-sectional view of the high-frequency module 1A according to this embodiment. The cross-section of the high-frequency module 1A in FIG. 10 is taken along line x-x in FIGS. 8 and 9.

In Figures 8 to 10, some components are labeled with an indicative label (such as "PA") to make it easier to understand the relative placement of the components, but these labels do not necessarily have to be attached to the actual components. Also, in Figures 8 and 9, the resin members 91 and 92 that cover the multiple circuit components and the shielding layer 93 that covers the resin members 91 and 92 are not shown.

Note that Figures 8 to 10 show one implementation example of the high-frequency module 1A, and the high-frequency module 1A can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted in a limiting sense.

In addition to the multiple circuit components shown in FIG. 7, the high-frequency module 1A includes a module substrate 90, resin members 91 and 92, a shielding layer 93, and multiple external connection terminals 94.

Filters 38 and 39 and matching circuit 46 are arranged on the main surface 90a of the module substrate 90.

Like filters 30 to 37, filters 38 and 39 are implemented as SAW filters, BAW filters, LC resonator filters, or dielectric resonator filters, or any combination thereof. However, filters 38 and 39 are not limited to these.

Filters 38 and 39 are acoustic wave filters mounted on a single piezoelectric substrate and are called duplexers 302. Note that filters 38 and 39 may also be mounted on separate piezoelectric substrates, meaning they do not have to be duplexers.

As shown in FIG. 8 , the duplexer 302 is disposed between the power amplifier 10 and the filter 30, and between the power amplifier 10 and the filter 32, in a plan view of the module substrate 90. The top surface of the duplexer 302, like the duplexers 300 and 301, is exposed from the resin member 91 and is in contact with the shielding layer 93. Note that the duplexer 302 does not have to be disposed between the power amplifier 10 and the filter 32, and the top surface of the duplexer 302 does not have to be in contact with the shielding layer 93.

Similar to matching circuits 40 to 45, matching circuit 46 is implemented, for example, as a chip inductor and/or a chip capacitor. However, the implementation of matching circuit 46 is not limited to a chip inductor and/or a chip capacitor. For example, matching circuit 46 may be implemented using a wiring pattern formed on module substrate 90.

The integrated circuit 200A, which includes the low-noise amplifier 20 and switch circuits 50A-52A, is disposed on the main surface 90b of the module substrate 90.

The low-noise amplifier 20 and switch circuits 50A-52A can be configured with FETs. Note that the amplifying transistors of the low-noise amplifier 20 and the switches included in the switch circuits 50A-52A are not limited to FETs. For example, some or all of the low-noise amplifier 20 and switch circuits 50A-52A may be configured with bipolar transistors.

Note that the low-noise amplifier 20 and switch circuits 50A-52A do not have to be included in a single integrated circuit. For example, the low-noise amplifier 20 and switch circuits 50A and 52A may be included in an integrated circuit separate from the switch circuit 51A. In this case, the switch circuit 51A may be included in the same integrated circuit as a control circuit (not shown) that controls the power amplifier 10.

Note that the mounting of the high-frequency module 1A is not limited to the mounting examples shown in Figures 8 to 10. For example, the high-frequency module 1A may be mounted on one side of the module substrate 90, rather than on both sides of the module substrate 90.

[2.3 Summary]
As described above, the high-frequency module 1A according to this embodiment further includes the power amplifier 10 that is disposed on the module substrate 90 and connected to the filter 30, and the filters 38 and/or 39 that are disposed on the module substrate 90 and have a passband that includes at least a part of the band E that corresponds to the second power class, and the filters 38 and/or 39 may be disposed between the power amplifier 10 and the filter 30 when the module substrate 90 is viewed in plan.

In this way, filters 38 and/or 39, which generate less heat, are placed between power amplifier 10 and filter 30, which generate more heat, thereby suppressing the temperature rise of filter 30. This further suppresses heat transfer from filter 30 to filter 31, and further suppresses the deterioration of filter 31's characteristics due to a rise in filter 31's temperature.

Furthermore, for example, the high-frequency module 1A according to this embodiment may further include a resin member 91 that covers at least a portion of the module substrate 90 and the filters 30, 31, 34, and 38 and/or 39, and a shielding layer 93 that covers at least a portion of the resin member 91, and the filters 38 and/or 39 may be in contact with the shielding layer 93.

As a result, the filters 38 and/or 39, which are placed between the power amplifier 10 and the filter 30, come into contact with the shielding layer 93, so that heat generated in the power amplifier 10 can be effectively discharged via the filters 38 and/or 39 and the shielding layer 93, effectively suppressing heat propagation from the power amplifier 10 to the filter 30.

(Other embodiments)
While the high-frequency module and communication device according to the present invention have been described above based on the embodiments, the high-frequency module and communication device according to the present invention are not limited to the above embodiments. The present invention also includes other embodiments realized by combining any of the components in the above embodiments, modifications obtained by applying various modifications to the above embodiments that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-mentioned high-frequency module.

For example, in the circuit configurations of the various circuits according to the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, a low-pass filter may be inserted between switch circuit 50 or 50A and antenna connection terminal 100.

The following describes the features of the high-frequency module and communication device described based on the above embodiments.

<1>
a module substrate;
a first filter disposed on the module substrate and having a passband including a transmission band of a first FDD band corresponding to a first power class;
a second filter disposed on the module substrate and having a passband that includes a receive band of the first FDD band;
a third filter disposed on the module substrate and having a passband including at least a part of a second band corresponding to a second power class defined by a maximum output power lower than that of the first power class;
the third filter is disposed between the first filter and the second filter in a plan view of the module substrate.
High frequency module.

<2>
the first filter is closer to an outer periphery of the module substrate than the second filter in a plan view of the module substrate;
The high-frequency module according to <1>.

<3>
the high-frequency module further includes a power amplifier disposed on the module substrate and connected to the first filter;
the third filter is disposed between the power amplifier and the first filter in a plan view of the module substrate.
The high-frequency module according to <1> or <2>.

＜4＞
The high-frequency module further comprises:
a resin member covering at least a portion of the module substrate, the first filter, the second filter, and the third filter;
a shielding layer that covers at least a portion of the resin member,
the third filter is in contact with the shield layer.
<1><2><3><4><5><6><7><8><9><10><11><12><13><14><15><16><17><18><19><20><21><22><23><24><25><26><27><28><31><29><32><33><34><34>

<5>
the second band is an FDD band,
a passband of the third filter includes one of a transmission band and a reception band of the second band;
the high-frequency module further includes a fourth filter having a passband including the other of the transmission band and the reception band of the second band,
the fourth filter is disposed between the first filter and the second filter in a plan view of the module substrate.
<4> The high-frequency module according to any one of <1> to <4>.

<6>
The high-frequency module further comprises:
a first switch circuit disposed on the module substrate and switchably connecting an antenna connection terminal to the first filter, the second filter, the third filter, and the fourth filter;
The first switch circuit
a first common terminal connected to the antenna connection terminal;
a first selection terminal connected to the first filter and the second filter;
a second selection terminal connected to the third filter and the fourth filter;
<5> The high-frequency module according to <5>.

＜７＞
The high-frequency module further comprises:
a power amplifier disposed on the module substrate and connected to the first filter and the third filter;
a second switch circuit disposed on the module substrate and switchably connecting the power amplifier to the first filter and the third filter;
The second switch circuit is
a second common terminal connected to the power amplifier;
a third selection terminal connected to the first filter;
a fourth selection terminal connected to the third filter.
<5> or <6>, wherein the high-frequency module is

＜8＞
The high-frequency module further comprises:
a low-noise amplifier disposed on the module substrate and connected to the second filter and the fourth filter;
a third switch circuit disposed on the module substrate and switchably connecting the low-noise amplifier to the second filter and the fourth filter;
The third switch circuit is
a third common terminal connected to the low noise amplifier;
a fifth selection terminal connected to the second filter;
a sixth selection terminal connected to the fourth filter.
<5><7> The high-frequency module according to any one of <5> to <7>.

＜９＞
The high-frequency module further comprises:
a power amplifier disposed on the module substrate and connected to the first filter;
a fifth filter disposed on the module substrate and having a passband including at least a portion of a third band corresponding to the second power class;
the fifth filter is disposed between the power amplifier and the first filter in a plan view of the module substrate.
<8> The high-frequency module according to any one of <1> to <8>.

<10>
The high-frequency module further comprises:
a resin member that covers at least a portion of the module substrate, the first filter, the second filter, the third filter, and the fifth filter;
a shielding layer that covers at least a portion of the resin member,
the fifth filter is in contact with the shield layer;
The high-frequency module according to <9>.

<11>
the first FDD band is n8 or n26 for 5G NR;
The second band is n12, n13 or n71 for 5G NR;
<10> The high-frequency module according to any one of <1> to <10>.

<12>
a signal processing circuit configured to process a high frequency signal;
and a high-frequency module according to any one of <1> to <11> configured to transmit the high-frequency signal between the signal processing circuit and an antenna.
Communication equipment.

The present invention can be widely used in communication devices such as mobile phones as a high-frequency module or communication device placed in the front end.

1, 1A High frequency module 2 Antenna 3 RFIC
4. BBIC
5, 5A Communication device 10 Power amplifier 20 Low noise amplifier 30, 31, 32, 33, 34, 35, 36, 37, 38, 39 Filter 40, 41, 42, 43, 44, 45, 46 Matching circuit 50, 50A, 51, 51A, 52, 52A Switch circuit 90 Module substrate 90a, 90b Main surface 91, 92 Resin member 93 Shield layer 94 External connection terminal 100 Antenna connection terminal 110 High frequency input terminal 120 High frequency output terminal 200, 200A Integrated circuit 300, 301, 302 Duplexer 500, 510, 520 Common terminal 501, 502, 503, 504, 505, 511, 512, 513, 514, 515, 521, 522, 523, 524, 525 Selection terminals D1, D2, D3, D4 Distance

Claims (12)

a module substrate;
a first filter disposed on the module substrate and having a passband including a transmission band of a first FDD band corresponding to a first power class;
a second filter disposed on the module substrate and having a passband that includes a receive band of the first FDD band;
a third filter disposed on the module substrate and having a passband including at least a part of a second band corresponding to a second power class defined by a maximum output power lower than that of the first power class;
the third filter is disposed between the first filter and the second filter in a plan view of the module substrate.
High frequency module. the first filter is closer to an outer periphery of the module substrate than the second filter in a plan view of the module substrate;
The high frequency module according to claim 1 . the high-frequency module further includes a power amplifier disposed on the module substrate and connected to the first filter;
the third filter is disposed between the power amplifier and the first filter in a plan view of the module substrate.
The high frequency module according to claim 1 or 2. The high-frequency module further comprises:
a resin member covering at least a portion of the module substrate, the first filter, the second filter, and the third filter;
a shielding layer that covers at least a portion of the resin member,
the third filter is in contact with the shield layer.
The high frequency module according to any one of claims 1 to 3. the second band is an FDD band,
a passband of the third filter includes one of a transmission band and a reception band of the second band;
the high-frequency module further includes a fourth filter having a passband including the other of the transmission band and the reception band of the second band,
the fourth filter is disposed between the first filter and the second filter in a plan view of the module substrate.
The high frequency module according to any one of claims 1 to 4. The high-frequency module further comprises:
a first switch circuit disposed on the module substrate and switchably connecting an antenna connection terminal to the first filter, the second filter, the third filter, and the fourth filter;
The first switch circuit
a first common terminal connected to the antenna connection terminal;
a first selection terminal connected to the first filter and the second filter;
a second selection terminal connected to the third filter and the fourth filter;
The high frequency module according to claim 5 . The high-frequency module further comprises:
a power amplifier disposed on the module substrate and connected to the first filter and the third filter;
a second switch circuit disposed on the module substrate and switchably connecting the power amplifier to the first filter and the third filter;
The second switch circuit is
a second common terminal connected to the power amplifier;
a third selection terminal connected to the first filter;
a fourth selection terminal connected to the third filter.
7. The high frequency module according to claim 5. The high-frequency module further comprises:
a low-noise amplifier disposed on the module substrate and connected to the second filter and the fourth filter;
a third switch circuit disposed on the module substrate and switchably connecting the low-noise amplifier to the second filter and the fourth filter;
The third switch circuit is
a third common terminal connected to the low noise amplifier;
a fifth selection terminal connected to the second filter;
a sixth selection terminal connected to the fourth filter.
The high frequency module according to any one of claims 5 to 7. The high-frequency module further comprises:
a power amplifier disposed on the module substrate and connected to the first filter;
a fifth filter disposed on the module substrate and having a passband including at least a portion of a third band corresponding to the second power class;
the fifth filter is disposed between the power amplifier and the first filter in a plan view of the module substrate.
The high frequency module according to any one of claims 1 to 8. The high-frequency module further comprises:
a resin member that covers at least a portion of the module substrate, the first filter, the second filter, the third filter, and the fifth filter;
a shielding layer that covers at least a portion of the resin member,
the fifth filter is in contact with the shield layer;
The high frequency module according to claim 9 . the first FDD band is n8 or n26 for 5G NR;
The second band is n12, n13 or n71 for 5G NR;
The high frequency module according to any one of claims 1 to 10. a signal processing circuit configured to process a high frequency signal;
and the high-frequency module according to any one of claims 1 to 11, configured to transmit the high-frequency signal between the signal processing circuit and an antenna.
Communication equipment.