WO2025253752A1 - High-frequency module and communication device - Google Patents

Abstract

This high-frequency module (1) comprises: a module substrate (90) having main surfaces (90a and 90b) facing each other; a duplexer (35) disposed on the module substrate (90) and including a filter (351) having a passband including a transmission band of an NTN band (E) and a filter (352) having a passband including a reception band of the NTN band (E); a power amplification circuit (13) disposed on one of the main surfaces (90a and 90b) and connected to the filter (351); and a low-noise amplification circuit (25) disposed on the other of the main surfaces (90a and 90b) and connected to the filter (352). In a plan view of the module substrate (90), the power amplification circuit (13) at least partially overlaps the low-noise amplification circuit (25).

Description

High frequency module and communication device

The present invention relates to a high-frequency module and a communication device.

In mobile communication devices such as mobile phones, the front-end circuits are becoming larger as multi-band operation progresses. Patent Document 1 discloses a single high-frequency module for terrestrial networks (TN) that integrates a low-band group (617-960 MHz) module, a mid-band group (1427-2200 MHz) module, and a high-band group (2300-2690 MHz) module.

International Publication No. 2022/044456

3GPP (registered trademark) (3rd Generation Partnership Project) is standardizing non-terrestrial networks (NTN) in order to integrate satellite systems and other technologies into cellular communication systems. User equipment (UE) that supports NTN in addition to TN may require an increased number of modules, resulting in larger equipment.

The present invention therefore provides a high-frequency module and communication device that can reduce the size of the communication device.

A radio frequency module according to one aspect of the present invention comprises a module substrate having first and second principal surfaces facing each other, a duplexer disposed on the module substrate and including a first filter having a pass band including the transmission band of the NTN (Non-Terrestrial Network) band and a second filter having a pass band including the reception band of the NTN band, a power amplifier circuit disposed on one of the first and second principal surfaces and connected to the first filter, and a first low noise amplifier circuit disposed on the other of the first and second principal surfaces and connected to the second filter, wherein, in a plan view of the module substrate, the power amplifier circuit at least partially overlaps with the first low noise amplifier circuit.

A communication device according to one aspect of the present invention comprises a signal processing circuit that processes high-frequency signals, and the above-described high-frequency module configured to transmit high-frequency signals between the signal processing circuit and an antenna.

This invention makes it possible to miniaturize communication devices.

FIG. 1 is a configuration diagram of a communication device according to an embodiment. FIG. 2 is a circuit configuration diagram of the high-frequency module according to the embodiment. FIG. 3 is a plan view of the high-frequency module according to the embodiment. FIG. 4 is a plan view of the high-frequency module according to the embodiment. FIG. 5 is a cross-sectional view of the high-frequency module according to the embodiment.

Embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, component arrangements and connection forms shown in the following embodiments are merely examples and are not intended to limit the present invention.

Note that each figure is a schematic diagram in which emphasis, omissions, or adjustments to the proportions have been made as appropriate to illustrate the present invention, and is not necessarily an exact illustration, and may differ from the actual shape, positional relationship, and proportions. In each figure, the same reference numerals are used to designate substantially identical components, and redundant explanations may be omitted or simplified.

In the following figures, the x-axis and y-axis are axes that intersect at right angles on a plane parallel to the main surface of the substrate. The z-axis is an axis perpendicular to the main surface of the substrate, with its positive direction indicating an upward direction and its negative direction indicating a downward direction.

In the following explanation, "connected" not only refers to a direct connection via a connection terminal and/or wiring conductor, but also includes an electrical connection via another circuit element. "Connected between A and B" means connected to both A and B between A and B, and arranged in series on the path connecting A and B. "C is connected between A and B" means one end of C is connected to A and the other end of C is connected to B, and C is arranged in series on the path connecting A and B. "Path connecting A and B" means a path made up of conductors that electrically connect A to B.

"Filter passband" is the portion of the frequency spectrum transmitted by the filter, and is defined as the frequency band between two frequencies 3 dB above the minimum power insertion loss.

"Transmission band" refers to the frequency band used for transmission in a communication device, and "reception band" refers to the frequency band used for reception in a communication device. For example, in a frequency division duplex (FDD) band, different frequency bands (uplink band and downlink band) are used as the transmission band and reception band. Also, for example, in a time division duplex (TDD) band, the same frequency band is used as the transmission band and reception band.

"Terminal" means the point where a conductor within an element terminates. Note that if the impedance of the conductor between elements is sufficiently low, terminal is interpreted as any point on the conductor between elements or the entire conductor, not just a single point.

"A component is disposed on a substrate" includes a component being disposed on the main surface of the substrate, and a component being disposed within the substrate. "A component is disposed on the main surface of the substrate" includes a component being disposed in contact with the main surface of the substrate, as well as a component being disposed above the main surface without contacting the main surface (for example, a component being stacked on another component disposed in contact with the main surface). "A component is disposed on the main surface of the substrate" may also include a component being disposed in a recess formed in the main surface. "A component is disposed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely disposed between the two main surfaces of the substrate but partially not covered by the substrate, and a component being only partially disposed within the substrate.

"A is located between B and C" means that at least one of the multiple line segments connecting any point in B to any point in C passes through A. "A is located farther from C than B" means that the distance between A and C is longer than the distance between B and C. Here, "the distance between A (B) and C" means the length of the shortest line segment (i.e., the shortest distance) of the multiple line segments connecting any point on the surface of A (B) to any point on the surface of C.

"Planar view of the module substrate" means viewing an object as orthogonally projected onto the xy plane in the negative direction of the z axis. "A overlaps with B in the planar view of the module substrate" means that the area of A projected orthogonally onto the xy plane overlaps with the area of B projected orthogonally onto the xy plane.

"Chip inductor" refers to a surface mount device (SMD) that constitutes an inductor. "Chip capacitor" refers to an SMD that constitutes a capacitor.

The "winding axis of a chip inductor" refers to the central axis of the winding of the chip inductor. Generally, in chip inductors, a strong magnetic field is generated along the winding axis.

Furthermore, terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "straight line," and numerical ranges do not only express strict meanings, but also include substantially equivalent ranges, for example, including an error of a few percent.

(Embodiment)
The following describes an embodiment.

[1. Configuration of communication device]
First, the configuration of a communication device 5 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing the configuration of a communication device 5 according to this embodiment.

Note that FIG. 1 is an exemplary configuration, and the communication device 5 may be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be construed as limiting.

The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE in a cellular network (also called a mobile network), such as a mobile phone, a smartphone, a tablet computer, or a wearable device. In another example, the communication device 5 can be implemented to provide wireless connectivity to Internet of Things (IoT) sensor devices, medical/healthcare devices, cars, unmanned aerial vehicles (UAVs) (also known as drones), and automated guided vehicles (AGVs). In yet another example, the communication device 5 can be implemented to provide wireless connectivity in a wireless access point or wireless hotspot.

The communication device 5 includes a high-frequency module 1, antennas 2a, 2b, and 2c, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

High-frequency module 1 can transmit high-frequency signals between antennas 2a-2c and RFIC 3. The circuit configuration of high-frequency module 1 will be described later using Figure 2.

Antennas 2a to 2c are connected to the high-frequency module 1. Antennas 2a to 2c can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a to 2c can receive high-frequency signals from the outside of the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a to 2c do not need to be included in the communication device 5. Furthermore, the communication device 5 may be equipped with one or more antennas in addition to antennas 2a to 2c.

The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 can process the transmission signal input from the BBIC 4 by up-conversion or the like, and output the high-frequency transmission signal generated by this signal processing to the high-frequency module 1. Furthermore, the RFIC 3 can process the high-frequency reception signal input via the high-frequency module 1 by down-conversion or the like, and output the reception signal generated by this signal processing to the BBIC 4. The RFIC 3 may also have a control unit that controls the switches, amplifiers, etc. of the high-frequency module 1. Note that some or all of the control unit functions of the RFIC 3 may be included outside the RFIC 3, and may be included in the BBIC 4 or the high-frequency module 1, for example.

The BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signals transmitted by the high-frequency module 1. Signals processed by the BBIC4 include, for example, image signals for image display and/or audio signals for calls via a speaker. The BBIC4 does not necessarily have to be included in the communication device 5.

[2. Circuit Configuration of High-Frequency Module 1]
Next, the circuit configuration of the high frequency module 1 according to this embodiment will be described with reference to Fig. 2. Fig. 2 is a circuit configuration diagram of the high frequency module 1 according to this embodiment.

Note that FIG. 2 is an exemplary circuit configuration, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

The high-frequency module 1 includes power amplifier circuits 11, 12, 13, and 14, baluns 15, 16, 17, and 18, low-noise amplifier circuits 21, 22, 23, 24, 25, 26, 27, and 28, duplexers 31, 32, 33, 34, 35, 36, 37, and 38, matching circuits 41, 42, 43, and 44, switch circuits 51, 52, 53, 61, 62, 63, and 64, antenna connection terminals 101, 102, and 103, high-frequency input terminals 111, 112, 113, and 114, and high-frequency output terminals 121, 122, 123, 124, 125, 126, and 127.

Antenna connection terminals 101-103 are external connection terminals of the high-frequency module 1. Antenna connection terminals 101-103 are connected to antennas 2a-2c, respectively, outside the high-frequency module 1, and are connected to switch circuits 51-53, respectively, inside the high-frequency module 1.

Radio frequency input terminals 111 to 114 are external connection terminals of the radio frequency module 1 and are terminals for receiving radio frequency signals from the RFIC 3. The radio frequency input terminals 111 to 114 are connected to the RFIC 3 outside the radio frequency module 1 and are connected to power amplifier circuits 11 to 14 inside the radio frequency module 1, respectively.

The radio frequency output terminals 121 to 128 are external connection terminals of the radio frequency module 1 and are terminals for supplying radio frequency signals to the RFIC 3. The radio frequency output terminals 121 to 128 are connected to the RFIC 3 outside the radio frequency module 1 and are connected to the low noise amplifier circuits 21 to 28 inside the radio frequency module 1, respectively.

The power amplifier circuit 11 is connected between the radio frequency input terminal 111 and the balun 15. Specifically, the input terminal of the power amplifier circuit 11 is connected to the radio frequency input terminal 111, and the output terminal of the power amplifier circuit 11 is connected to the balun 15. The power amplifier circuit 11 can amplify the TN band A transmission signal and the TN band B transmission signal using power supplied from a power supply (not shown).

In this embodiment, the power amplifier circuit 11 is a multi-stage amplifier circuit and a differential amplifier circuit. The power amplifier circuit 11 includes power amplifiers T11, T12, and T13, and a balun B14.

The power amplifier T11 is a drive stage amplifier and is connected between the radio frequency input terminal 111 and the balun B14. Specifically, the input terminal of the power amplifier T11 is connected to the radio frequency input terminal 111, and the output terminal of the power amplifier T11 is connected to the balun B14.

Power amplifiers T12 and T13 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. Power amplifiers T12 and T13 are connected between balun B14 and balun B15. Specifically, the input terminals of power amplifiers T12 and T13 are connected to balun B14, and the output terminals of power amplifiers T12 and T13 are connected to balun B14, and balun B15.

The balun B14 includes a primary coil L141 and a secondary coil L142 that can be coupled to the primary coil L141. One end of the primary coil L141 is connected to the output terminal of the power amplifier T11, and the other end of the primary coil L141 is connected to ground. One end of the secondary coil L142 is connected to the input terminal of the power amplifier T12, and the other end of the secondary coil L142 is connected to the input terminal of the power amplifier T13. The balun B14 converts the single-ended signal amplified by the power amplifier T11 into a differential signal and can supply this differential signal to the two power amplifiers T12 and T13, respectively.

Note that the circuit configuration of the power amplifier circuit 11 is not limited to the configuration shown in FIG. 2. For example, the power amplifier circuit 11 does not have to be a multi-stage amplifier circuit, but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 11 does not have to include the power amplifier T11. Also, for example, the power amplifier circuit 11 does not have to be a differential amplifier circuit, but may be a Doherty amplifier circuit. Also, for example, in the power amplifier circuit 11, the phase difference between the two high-frequency signals amplified by the power amplifiers T12 and T13 does not have to be 180 degrees, but may be 90 degrees. In this case, each of the baluns B14 and B15 may be replaced with a quadrature hybrid coupler. Also, for example, the power amplifier circuit 11 may amplify and output a single-ended signal as is. In this case, the power amplifier circuit 11 does not have to include the power amplifier T13 and the balun B14, and the high-frequency module 1 does not have to include the balun 15.

The power amplifier circuit 12 is connected between the radio frequency input terminal 112 and the balun 16. Specifically, the input terminal of the power amplifier circuit 12 is connected to the radio frequency input terminal 112, and the output terminal of the power amplifier circuit 12 is connected to the balun 16. The power amplifier circuit 12 can amplify the TN band C transmit signal and the TN band D transmit signal using power supplied from a power supply (not shown).

In this embodiment, the power amplifier circuit 12 is a multi-stage amplifier circuit and a differential amplifier circuit. The power amplifier circuit 12 includes power amplifiers T21, T22, and T23, and a balun B24.

Power amplifier T21 is a drive stage amplifier and is connected between the radio frequency input terminal 112 and the balun B24. Specifically, the input terminal of power amplifier T21 is connected to the radio frequency input terminal 112, and the output terminal of power amplifier T21 is connected to the balun B24.

Power amplifiers T22 and T23 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. Power amplifiers T22 and T23 are connected between balun B24 and balun 16. Specifically, the input terminals of power amplifiers T22 and T23 are connected to balun B24, and the output terminals of power amplifiers T22 and T23 are connected to balun 16.

The balun B24 includes a primary coil L241 and a secondary coil L242 that can be coupled to the primary coil L241. One end of the primary coil L241 is connected to the output terminal of the power amplifier T21, and the other end of the primary coil L241 is connected to ground. One end of the secondary coil L242 is connected to the input terminal of the power amplifier T22, and the other end of the secondary coil L242 is connected to the input terminal of the power amplifier T23. The balun B24 converts the single-ended signal amplified by the power amplifier T21 into a differential signal and can supply this differential signal to the two power amplifiers T22 and T23, respectively.

Note that the circuit configuration of the power amplifier circuit 12 is not limited to the configuration shown in FIG. 2. For example, the power amplifier circuit 12 does not have to be a multi-stage amplifier circuit, but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 12 does not have to include the power amplifier T21. Furthermore, for example, the power amplifier circuit 12 does not have to be a differential amplifier circuit, but may be a Doherty amplifier circuit. Furthermore, for example, in the power amplifier circuit 12, the phase difference between the two high-frequency signals amplified by the power amplifiers T22 and T23 does not have to be 180 degrees, but may be 90 degrees. In this case, each of the baluns B24 and B16 may be replaced with a quadrature hybrid coupler. Furthermore, for example, the power amplifier circuit 12 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 12 does not have to include the power amplifier T23 and the balun B24, and the high-frequency module 1 does not have to include the balun 16.

The power amplifier circuit 13 is connected between the radio frequency input terminal 113 and the balun 17. Specifically, the input terminal of the power amplifier circuit 13 is connected to the radio frequency input terminal 113, and the output terminal of the power amplifier circuit 13 is connected to the balun 17. The power amplifier circuit 13 can amplify the NTN band E transmission signal and the NTN band F transmission signal using power supplied from a power supply (not shown).

In this embodiment, the power amplifier circuit 13 is a multi-stage amplifier circuit and a differential amplifier circuit. The power amplifier circuit 13 includes power amplifiers T31, T32, and T33, and a balun B34.

Power amplifier T31 is a drive stage amplifier and is connected between radio frequency input terminal 113 and balun B34. Specifically, the input terminal of power amplifier T31 is connected to radio frequency input terminal 113, and the output terminal of power amplifier T31 is connected to balun B34.

Power amplifiers T32 and T33 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. Power amplifiers T32 and T33 are connected between balun B34 and balun 17. Specifically, the input terminals of power amplifiers T32 and T33 are connected to balun B34, and the output terminals of power amplifiers T32 and T33 are connected to balun 17.

The balun B34 includes a primary coil L341 and a secondary coil L342 that can be coupled to the primary coil L341. One end of the primary coil L341 is connected to the output terminal of the power amplifier T31, and the other end of the primary coil L341 is connected to ground. One end of the secondary coil L342 is connected to the input terminal of the power amplifier T32, and the other end of the secondary coil L342 is connected to the input terminal of the power amplifier T33. The balun B34 converts the single-ended signal amplified by the power amplifier T31 into a differential signal and can supply this differential signal to the two power amplifiers T32 and T33, respectively.

Note that the circuit configuration of the power amplifier circuit 13 is not limited to the configuration shown in FIG. 2. For example, the power amplifier circuit 13 does not have to be a multi-stage amplifier circuit, but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 13 does not have to include the power amplifier T31. Furthermore, for example, the power amplifier circuit 13 does not have to be a differential amplifier circuit, but may be a Doherty amplifier circuit. Furthermore, for example, in the power amplifier circuit 13, the phase difference between the two high-frequency signals amplified by the power amplifiers T32 and T33 does not have to be 180 degrees, but may be 90 degrees. In this case, each of the baluns B34 and 17 may be replaced with a quadrature hybrid coupler. Furthermore, for example, the power amplifier circuit 13 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 13 does not have to include the power amplifier T33 and the balun B34, and the high-frequency module 1 does not have to include the balun 17.

The power amplifier circuit 14 is connected between the radio frequency input terminal 114 and the balun 18. Specifically, the input terminal of the power amplifier circuit 14 is connected to the radio frequency input terminal 114, and the output terminal of the power amplifier circuit 14 is connected to the balun 18. The power amplifier circuit 14 can amplify the TN band G transmission signal (G-Tx) and the TN band H transmission signal (H-Tx) using power supplied from a power supply (not shown). Note that the power amplifier circuit 14 does not have to be included in the radio frequency module 1.

In this embodiment, the power amplifier circuit 14 is a multi-stage amplifier circuit and a differential amplifier circuit. The power amplifier circuit 14 includes power amplifiers T41, T42, and T43, and a balun B44.

Power amplifier T41 is a drive stage amplifier and is connected between the radio frequency input terminal 114 and balun B44. Specifically, the input terminal of power amplifier T41 is connected to the radio frequency input terminal 114, and the output terminal of power amplifier T41 is connected to balun B44.

Power amplifiers T42 and T43 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. Power amplifiers T42 and T43 are connected between balun B44 and balun 18. Specifically, the input terminals of power amplifiers T42 and T43 are connected to balun B44, and the output terminals of power amplifiers T42 and T43 are connected to balun 18.

The balun B44 includes a primary coil L441 and a secondary coil L442 that can be coupled to the primary coil L441. One end of the primary coil L441 is connected to the output terminal of the power amplifier T41, and the other end of the primary coil L441 is connected to ground. One end of the secondary coil L442 is connected to the input terminal of the power amplifier T42, and the other end of the secondary coil L442 is connected to the input terminal of the power amplifier T43. The balun B44 converts the single-ended signal amplified by the power amplifier T41 into a differential signal and can supply this differential signal to the two power amplifiers T42 and T43, respectively.

Note that the circuit configuration of the power amplifier circuit 14 is not limited to the configuration shown in FIG. 2. For example, the power amplifier circuit 14 does not have to be a multi-stage amplifier circuit, but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 14 does not have to include the power amplifier T41. Furthermore, for example, the power amplifier circuit 14 does not have to be a differential amplifier circuit, but may be a Doherty amplifier circuit. Furthermore, for example, in the power amplifier circuit 14, the phase difference between the two high-frequency signals amplified by the power amplifiers T42 and T43 does not have to be 180 degrees, but may be 90 degrees. In this case, each of the baluns B44 and 18 may be replaced with a quadrature hybrid coupler. Furthermore, for example, the power amplifier circuit 14 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 14 does not have to include the power amplifier T43 and the balun B44, and the high-frequency module 1 does not have to include the balun 18.

The balun 15 includes a primary coil 151 and a secondary coil 152 that can be coupled to the primary coil 151. One end of the primary coil 151 is connected to the output terminal of the power amplifier T12, and the other end of the primary coil 151 is connected to the output terminal of the power amplifier T13. One end of the secondary coil 152 is connected to the matching circuit 41, and the other end of the secondary coil 152 is connected to ground. The balun 15 can convert the differential signal amplified by the power amplifier circuit 11 into a single-ended signal. Note that if the power amplifier circuit 11 outputs a single-ended signal, the balun 15 does not need to be included in the high-frequency module 1.

The balun 16 includes a primary coil 161 and a secondary coil 162 that can be coupled to the primary coil 161. One end of the primary coil 161 is connected to the output terminal of the power amplifier T22, and the other end of the primary coil 161 is connected to the output terminal of the power amplifier T23. One end of the secondary coil 162 is connected to the matching circuit 42, and the other end of the secondary coil 162 is connected to ground. The balun 16 can convert the differential signal amplified by the power amplifier circuit 12 into a single-ended signal. Note that if the power amplifier circuit 12 outputs a single-ended signal, the balun 16 does not need to be included in the high-frequency module 1.

The balun 17 includes a primary coil 171 and a secondary coil 172 that can be coupled to the primary coil 171. One end of the primary coil 171 is connected to the output terminal of the power amplifier T32, and the other end of the primary coil 171 is connected to the output terminal of the power amplifier T33. One end of the secondary coil 172 is connected to the matching circuit 43, and the other end of the secondary coil 172 is connected to ground. The balun 17 can convert the differential signal amplified by the power amplifier circuit 13 into a single-ended signal. Note that if the power amplifier circuit 13 outputs a single-ended signal, the balun 17 does not need to be included in the high-frequency module 1.

The balun 18 includes a primary coil 181 and a secondary coil 182 that can be coupled to the primary coil 181. One end of the primary coil 181 is connected to the output terminal of the power amplifier T42, and the other end of the primary coil 181 is connected to the output terminal of the power amplifier T43. One end of the secondary coil 182 is connected to the matching circuit 44, and the other end of the secondary coil 182 is connected to ground. The balun 18 can convert the differential signal amplified by the power amplifier circuit 14 into a single-ended signal. Note that if the power amplifier circuit 14 outputs a single-ended signal, the balun 18 does not need to be included in the high-frequency module 1.

The low-noise amplifier circuit 21 is connected between the duplexer 31 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier circuit 21 is connected to the duplexer 31, and the output terminal of the low-noise amplifier circuit 21 is connected to the high-frequency output terminal 121. The low-noise amplifier circuit 21 can amplify the received signal in TN band A using power supplied from a power supply (not shown).

The low-noise amplifier circuit 22 is connected between the duplexer 32 and the high-frequency output terminal 122. Specifically, the input terminal of the low-noise amplifier circuit 22 is connected to the duplexer 32, and the output terminal of the low-noise amplifier circuit 22 is connected to the high-frequency output terminal 122. The low-noise amplifier circuit 22 can amplify the received signal in TN band B using power supplied from a power supply (not shown).

The low-noise amplifier circuit 23 is connected between the duplexer 33 and the high-frequency output terminal 123. Specifically, the input terminal of the low-noise amplifier circuit 23 is connected to the duplexer 33, and the output terminal of the low-noise amplifier circuit 23 is connected to the high-frequency output terminal 123. The low-noise amplifier circuit 23 can amplify the received signal in TN band C using power supplied from a power supply (not shown).

The low-noise amplifier circuit 24 is connected between the duplexer 34 and the high-frequency output terminal 124. Specifically, the input terminal of the low-noise amplifier circuit 24 is connected to the duplexer 34, and the output terminal of the low-noise amplifier circuit 24 is connected to the high-frequency output terminal 124. The low-noise amplifier circuit 24 can amplify the received TN band D signal using power supplied from a power supply (not shown).

The low-noise amplifier circuit 25 is an example of a first low-noise amplifier circuit, and is connected between the duplexer 35 and the high-frequency output terminal 125. Specifically, the input terminal of the low-noise amplifier circuit 25 is connected to the duplexer 35, and the output terminal of the low-noise amplifier circuit 25 is connected to the high-frequency output terminal 125. The low-noise amplifier circuit 25 can amplify the received NTN band E signal using power supplied from a power source (not shown).

The low-noise amplifier circuit 26 is connected between the duplexer 36 and the high-frequency output terminal 126. Specifically, the input terminal of the low-noise amplifier circuit 26 is connected to the duplexer 36, and the output terminal of the low-noise amplifier circuit 26 is connected to the high-frequency output terminal 126. The low-noise amplifier circuit 26 can amplify the received NTN band F signal using power supplied from a power supply (not shown).

The low-noise amplifier circuit 27 is an example of a second low-noise amplifier circuit, and is connected between the duplexer 37 and the high-frequency output terminal 127. Specifically, the input terminal of the low-noise amplifier circuit 27 is connected to the duplexer 37, and the output terminal of the low-noise amplifier circuit 27 is connected to the high-frequency output terminal 127. The low-noise amplifier circuit 27 can amplify the TN band G received signal (G-Rx) using power supplied from a power supply (not shown).

The low-noise amplifier circuit 28 is connected between the duplexer 38 and the high-frequency output terminal 128. Specifically, the input terminal of the low-noise amplifier circuit 28 is connected to the duplexer 38, and the output terminal of the low-noise amplifier circuit 28 is connected to the high-frequency output terminal 128. The low-noise amplifier circuit 28 can amplify the TN band H received signal (H-Rx) using power supplied from a power supply (not shown).

In this embodiment, the low-noise amplifier circuits 21 to 28 are included in the integrated circuit 20. Note that some or all of the low-noise amplifier circuits 21 to 28 do not have to be included in the integrated circuit 20, and furthermore, they do not have to be included in the high-frequency module 1.

The duplexer 31 is connected between the antenna connection terminal 101 and the power amplifier circuit 11 and low-noise amplifier circuit 21. The duplexer 31 includes filters 311 and 312 and can separate the transmit and receive signals of TN band A.

Filter 311 is a bandpass filter with a passband that includes the transmission band (A-Tx) of TN band A. Filter 311 is capable of passing signals within the transmission band of TN band A and attenuating signals outside the transmission band of TN band A. One end of filter 311 is connected to selection terminal 511 of switch circuit 51, and the other end of filter 311 is connected to selection terminal 611 of switch circuit 61.

Filter 312 is a bandpass filter with a passband that includes the receive band (A-Rx) of TN band A. Filter 312 can pass signals within the receive band of TN band A and attenuate signals outside the receive band of TN band A. One end of filter 312 is connected to selection terminal 511 of switch circuit 51, and the other end of filter 312 is connected to low-noise amplifier circuit 21. Note that filter 312 does not necessarily have to be included in high-frequency module 1.

The duplexer 32 is connected between the antenna connection terminal 101 and the power amplifier circuit 11 and low-noise amplifier circuit 22. The duplexer 32 includes filters 321 and 322, and can separate the transmit and receive signals of TN band B. Note that the duplexer 32 does not necessarily have to be included in the high-frequency module 1.

Filter 321 is a bandpass filter with a passband that includes the transmission band (B-Tx) of TN band B. Filter 321 can pass signals within the transmission band of TN band B and attenuate signals outside the transmission band of TN band B. One end of filter 321 is connected to selection terminal 512 of switch circuit 51, and the other end of filter 321 is connected to selection terminal 612 of switch circuit 61. Note that filter 321 does not necessarily have to be included in high-frequency module 1.

Filter 322 is a bandpass filter with a passband that includes the receive band (B-Rx) of TN band B. Filter 322 can pass signals within the receive band of TN band B and attenuate signals outside the receive band of TN band B. One end of filter 322 is connected to selection terminal 512 of switch circuit 51, and the other end of filter 322 is connected to low-noise amplifier circuit 22. Note that filter 322 does not necessarily have to be included in high-frequency module 1.

The duplexer 33 is connected between the antenna connection terminal 102 and the power amplifier circuit 12 and low-noise amplifier circuit 23. The duplexer 33 includes filters 331 and 332 and can separate the transmit and receive signals of TN band C.

Filter 331 is a bandpass filter with a passband that includes the transmission band (C-Tx) of TN band C. Filter 331 is capable of passing signals within the transmission band of TN band C and attenuating signals outside the transmission band of TN band C. One end of filter 331 is connected to selection terminal 521 of switch circuit 52, and the other end of filter 331 is connected to selection terminal 621 of switch circuit 62.

Filter 332 is a bandpass filter with a passband that includes the TN band C reception band (C-Rx). Filter 332 can pass signals within the TN band C reception band and attenuate signals outside the TN band C reception band. One end of filter 332 is connected to selection terminal 521 of switch circuit 52, and the other end of filter 332 is connected to low-noise amplifier circuit 23. Note that filter 332 does not necessarily have to be included in high-frequency module 1.

The duplexer 34 is connected between the antenna connection terminal 102 and the power amplifier circuit 12 and low-noise amplifier circuit 24. The duplexer 34 includes filters 341 and 342, and can separate the transmit and receive signals of TN band D. Note that the duplexer 34 does not necessarily have to be included in the high-frequency module 1.

Filter 341 is a bandpass filter with a passband that includes the transmission band (D-Tx) of TN band D. Filter 341 can pass signals within the transmission band of TN band D and attenuate signals outside the transmission band of TN band D. One end of filter 341 is connected to selection terminal 522 of switch circuit 52, and the other end of filter 341 is connected to selection terminal 622 of switch circuit 62. Note that filter 341 does not necessarily have to be included in high-frequency module 1.

Filter 342 is a bandpass filter with a passband that includes the TN band D reception band (D-Rx). Filter 342 can pass signals within the TN band D reception band and attenuate signals outside the TN band D reception band. One end of filter 342 is connected to selection terminal 522 of switch circuit 52, and the other end of filter 342 is connected to low-noise amplifier circuit 24. Note that filter 342 does not necessarily have to be included in high-frequency module 1.

The duplexer 35 is connected between the antenna connection terminal 102 and the power amplifier circuit 13 and low-noise amplifier circuit 25. The duplexer 35 includes filters 351 and 352 and can separate the transmit and receive signals of NTN band E.

Filter 351 is an example of a first filter, and is a bandpass filter with a passband that includes the transmission band (E-Tx) of NTN band E. Filter 351 can pass signals within the transmission band of NTN band E and attenuate signals outside the transmission band of NTN band E. One end of filter 351 is connected to selection terminal 523 of switch circuit 52, and the other end of filter 351 is connected to selection terminal 631 of switch circuit 63.

The filter 352 is an example of a second filter, and is a bandpass filter having a passband that includes the reception band (E-Rx) of NTN band E. The filter 352 can pass signals within the reception band of NTN band E, and can attenuate signals outside the reception band of NTN band E. One end of the filter 352 is connected to the selection terminal 523 of the switch circuit 52, and the other end of the filter 352 is connected to the low-noise amplifier circuit 25. Note that the filter 352 does not have to be included in the high-frequency module 1.

The duplexer 36 is connected between the antenna connection terminal 102 and the power amplifier circuit 13 and low-noise amplifier circuit 26. The duplexer 36 includes filters 361 and 362, and can separate the NTN band F transmit and receive signals. Note that the duplexer 36 does not necessarily have to be included in the high-frequency module 1.

The filter 361 is a bandpass filter having a passband that includes the transmission band (F-Tx) of NTN band F. The filter 361 can pass signals within the transmission band of NTN band F and can attenuate signals outside the transmission band of NTN band F. One end of the filter 361 is connected to the selection terminal 524 of the switch circuit 52, and the other end of the filter 361 is connected to the selection terminal 632 of the switch circuit 63. Note that the filter 361 does not necessarily have to be included in the high-frequency module 1.

The filter 362 is a bandpass filter having a passband that includes the reception band (F-Rx) of NTN band F. The filter 362 is capable of passing signals within the reception band of NTN band F and attenuating signals outside the reception band of NTN band F. One end of the filter 362 is connected to the selection terminal 524 of the switch circuit 52, and the other end of the filter 362 is connected to the low-noise amplifier circuit 26. Note that the filter 362 does not necessarily have to be included in the high-frequency module 1.

The duplexer 37 is connected between the antenna connection terminal 103 and the power amplifier circuit 14 and low-noise amplifier circuit 27. The duplexer 37 includes filters 371 and 372, and can separate the TN band G transmit signal and receive signal. Note that the duplexer 37 does not necessarily have to be included in the high-frequency module 1.

Filter 371 is a bandpass filter having a passband that includes the transmission band of TN band G. Filter 371 can pass signals within the transmission band of TN band G and can attenuate signals outside the transmission band of TN band G. One end of filter 371 is connected to selection terminal 531 of switch circuit 53, and the other end of filter 371 is connected to selection terminal 641 of switch circuit 64. Note that filter 371 does not necessarily have to be included in high-frequency module 1.

Filter 372 is an example of a third filter, and is a bandpass filter having a passband that includes the TN band G reception band. Filter 372 can pass signals within the TN band G reception band and attenuate signals outside the TN band G reception band. One end of filter 372 is connected to selection terminal 531 of switch circuit 53, and the other end of filter 372 is connected to low-noise amplifier circuit 27. Note that filter 372 does not necessarily have to be included in high-frequency module 1.

The duplexer 38 is connected between the antenna connection terminal 103 and the power amplifier circuit 14 and low-noise amplifier circuit 28. The duplexer 38 includes filters 381 and 382, and can separate the transmit and receive signals in TN band H. Note that the duplexer 38 does not necessarily have to be included in the high-frequency module 1.

Filter 381 is a bandpass filter having a passband that includes the transmission band of TN band H. Filter 381 can pass signals within the transmission band of TN band H and attenuate signals outside the transmission band of TN band H. One end of filter 381 is connected to selection terminal 532 of switch circuit 53, and the other end of filter 381 is connected to selection terminal 642 of switch circuit 64. Note that filter 381 does not necessarily have to be included in high-frequency module 1.

Filter 382 is a bandpass filter having a passband that includes the reception band of TN band H. Filter 382 can pass signals within the reception band of TN band H and can attenuate signals outside the reception band of TN band H. One end of filter 382 is connected to selection terminal 532 of switch circuit 53, and the other end of filter 382 is connected to low-noise amplifier circuit 28. Note that filter 382 does not necessarily have to be included in high-frequency module 1.

The matching circuit (matching network) 41 is connected between the power amplifier circuit 11 and the filters 311 and 321. Specifically, one end of the matching circuit 41 is connected to the power amplifier circuit 11 via the balun 15, and the other end of the matching circuit 41 is connected to the filters 311 and 321 via the switch circuit 61. The matching circuit 41 includes an inductor and may also include a capacitor. The matching circuit 41 can achieve impedance matching between the power amplifier circuit 11 and the filters 311 and 321.

The matching circuit (matching network) 42 is connected between the power amplifier circuit 12 and the filters 331 and 341. Specifically, one end of the matching circuit 42 is connected to the power amplifier circuit 12 via the balun 16, and the other end of the matching circuit 42 is connected to the filters 331 and 341 via the switch circuit 62. The matching circuit 42 includes an inductor and may also include a capacitor. The matching circuit 42 can achieve impedance matching between the power amplifier circuit 12 and the filters 331 and 341.

The matching circuit (matching network) 43 is connected between the power amplifier circuit 13 and the filters 351 and 361. Specifically, one end of the matching circuit 43 is connected to the power amplifier circuit 13 via the balun 17, and the other end of the matching circuit 43 is connected to the filters 351 and 361 via the switch circuit 63. The matching circuit 43 may include an inductor and/or a capacitor. The matching circuit 43 can achieve impedance matching between the power amplifier circuit 13 and the filters 351 and 361.

The matching circuit (matching network) 44 is connected between the power amplifier circuit 14 and the filters 371 and 381. Specifically, one end of the matching circuit 44 is connected to the power amplifier circuit 14 via the balun 18, and the other end of the matching circuit 44 is connected to the filters 371 and 381 via the switch circuit 64. The matching circuit 44 includes an inductor and may also include a capacitor. The matching circuit 44 can achieve impedance matching between the power amplifier circuit 14 and the filters 371 and 381. Note that the matching circuit 44 does not have to be included in the high-frequency module 1.

The switch circuit 51 is connected between the antenna connection terminal 101 and the duplexers 31 and 32. The switch circuit 51 includes a common terminal 510 and selection terminals 511 and 512. The common terminal 510 is connected to the antenna connection terminal 101. The selection terminal 511 is connected to the duplexer 31. The selection terminal 512 is connected to the duplexer 32. In this connection configuration, the switch circuit 51 can selectively connect the common terminal 510 to the selection terminals 511 and 512, for example, based on a control signal from the RFIC 3. The switch circuit 51 is configured, for example, as an SPDT (Single-Pole Double-Throw) type switch circuit.

The switch circuit 52 is connected between the antenna connection terminal 102 and the duplexers 33 to 36. The switch circuit 52 includes a common terminal 520 and selection terminals 521, 522, 523, and 524. The common terminal 520 is connected to the antenna connection terminal 102. The selection terminal 521 is connected to the duplexer 33. The selection terminal 522 is connected to the duplexer 34. The selection terminal 523 is connected to the duplexer 35. The selection terminal 524 is connected to the duplexer 36. In this connection configuration, the switch circuit 52 can selectively connect the common terminal 520 to the selection terminals 521 to 524 based on, for example, a control signal from the RFIC 3. The switch circuit 52 is configured, for example, as an SP4T (Single-Pole Quadruple-Throw) type switch circuit.

The switch circuit 53 is connected between the antenna connection terminal 103 and the duplexers 37 and 38. The switch circuit 53 includes a common terminal 530 and selection terminals 531 and 532. The common terminal 530 is connected to the antenna connection terminal 103. The selection terminal 531 is connected to the duplexer 37. The selection terminal 532 is connected to the duplexer 38. In this connection configuration, the switch circuit 53 can selectively connect the common terminal 530 to the selection terminals 531 and 532, for example, based on a control signal from the RFIC 3. The switch circuit 53 is configured, for example, as an SPDT type switch circuit.

In this embodiment, switch circuits 51 to 53 are included in integrated circuit 50. Note that some or all of switch circuits 51 to 53 do not have to be included in integrated circuit 50, and furthermore, they do not have to be included in high-frequency module 1.

The switch circuit 61 is connected between the power amplifier circuit 11 and the filters 311 and 321. The switch circuit 61 includes a common terminal 610 and selection terminals 611 and 612. The common terminal 610 is connected to the power amplifier circuit 11 via the matching circuit 41 and the balun 15. The selection terminal 611 is connected to the filter 311. The selection terminal 612 is connected to the filter 321. In this connection configuration, the switch circuit 61 can selectively connect the common terminal 610 to the selection terminals 611 and 612 based on, for example, a control signal from the RFIC 3. The switch circuit 61 is configured, for example, as an SPDT type switch circuit.

The switch circuit 62 is connected between the power amplifier circuit 12 and the filters 331 and 341. The switch circuit 62 includes a common terminal 620 and selection terminals 621 and 622. The common terminal 620 is connected to the power amplifier circuit 12 via the matching circuit 42 and the balun 16. The selection terminal 621 is connected to the filter 331. The selection terminal 622 is connected to the filter 341. In this connection configuration, the switch circuit 62 can selectively connect the common terminal 620 to the selection terminals 621 and 622 based on, for example, a control signal from the RFIC 3. The switch circuit 62 is configured, for example, as an SPDT type switch circuit.

The switch circuit 63 is connected between the power amplifier circuit 13 and the filters 351 and 361. The switch circuit 63 includes a common terminal 630 and selection terminals 631 and 632. The common terminal 630 is connected to the power amplifier circuit 13 via the matching circuit 43 and the balun 17. The selection terminal 631 is connected to the filter 351. The selection terminal 632 is connected to the filter 361. In this connection configuration, the switch circuit 63 can selectively connect the common terminal 630 to the selection terminals 631 and 632 based on, for example, a control signal from the RFIC 3. The switch circuit 63 is configured, for example, as an SPDT type switch circuit.

The switch circuit 64 is connected between the power amplifier circuit 14 and the filters 371 and 381. The switch circuit 64 includes a common terminal 640 and selection terminals 641 and 642. The common terminal 640 is connected to the power amplifier circuit 14 via the matching circuit 44 and the balun 18. The selection terminal 641 is connected to the filter 371. The selection terminal 642 is connected to the filter 381. In this connection configuration, the switch circuit 64 can selectively connect the common terminal 640 to the selection terminals 641 and 642 based on, for example, a control signal from the RFIC 3. The switch circuit 64 is configured, for example, as an SPDT type switch circuit.

In this embodiment, switch circuits 61 to 64 are included in integrated circuit 60. Note that some or all of switch circuits 61 to 64 do not have to be included in integrated circuit 60, and furthermore, they do not have to be included in high-frequency module 1.

3. Frequency Band
Next, frequency bands according to this embodiment will be described. TN bands A to D, G, and H and NTN bands E and F are frequency bands for communication systems constructed using radio access technology (RAT). TN bands A to D, G, and H and NTN bands E and F are predefined by standardization organizations (e.g., 3GPP and IEEE (Institute of Electrical and Electronics Engineers)). Examples of communication systems include 5GNR (5th Generation New Radio) systems, LTE (Long Term Evolution) systems, and WLAN (Wireless Local Area Network) systems.

TN Bands A and B are frequency bands used in TN and are included in the low band group (LB). TN Bands A and B are different frequency bands from each other. The low band group is a band group that includes multiple frequency bands for LTE and/or 5G NR, and is defined in the frequency range of 617 to 960 MHz. TN Bands A and B can be, for example, any two of Band 5, Band 8, Band 26, and Band 28 for LTE, and n5, n8, n26, and n28 for 5G NR, but TN Bands A and B are not limited to these.

TN bands C and D are frequency bands used in TN and are included in the mid-band group (MB). TN bands C and D are different frequency bands from each other. The mid-band group is a band group that includes multiple frequency bands for LTE and/or 5G NR, and is defined in the frequency range of 1427 to 2200 MHz. TN bands C and D can be, for example, any two of Band 1, Band 3, Band 25, and Band 66 for LTE, and n1, n3, n25, and n66 for 5G NR, but are not limited to these.

NTN bands E and F are frequency bands used for NTN. NTN bands E and F are different frequency bands. While n256 and n255 for 5G NR can be used as NTN bands E and F, NTN bands E and F are not limited to these. Note that the NTN band is a frequency band that cannot be used simultaneously with the TN band. In other words, the NTN band and the TN band are used exclusively. Note that simultaneous use of multiple TN bands may be possible, and simultaneous use of multiple NTN bands may also be possible.

TN bands G and H are frequency bands used in TN and are included in the high band group (HB). TN bands G and H are different frequency bands from each other. The high band group is a band group that includes multiple frequency bands for LTE and/or 5G NR, and is defined as a frequency range of 2300 to 2690 MHz. TN bands G and H can be, for example, any two of Band 7 and Band 30 for LTE, and n7 and n30 for 5G NR, but are not limited to these.

In this embodiment, TN bands A to D, G, and H and NTN bands E and F are FDD bands, but this is not limited to this. For example, TN bands G and/or H may be TDD bands. In this case, duplexers 37 and/or 38 may be replaced with filters used for transmission and reception and a switch circuit that switches between transmission and reception.

[4. Mounting example of high frequency module 1]
Next, an implementation example of the high-frequency module 1 having the circuit configuration described above will be described with reference to FIGS. 3, 4, and 5. FIG. 3 is a plan view of the high-frequency module 1 according to this embodiment. FIG. 4 is a plan view of the high-frequency module 1 according to this embodiment, seen from the positive side of the z-axis toward the main surface 90b of the module substrate 90. FIG. 5 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in FIG. 5 is taken along line v-v in FIGS. 3 and 4. Note that in FIGS. 3 to 5, some components are labeled with letters to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with these letters. Also, hatched components in FIGS. 3 and 4 represent optional components that are not essential to this embodiment.

Note that FIG. 3 shows an exemplary implementation of the high-frequency module 1, and the high-frequency module 1 may be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be construed as limiting.

In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1 includes a module substrate 90 and metal walls 911, 913, 914, and 915.

The module substrate 90 has opposing principal surfaces 90a and 90b. The principal surface 90a is an example of a first principal surface, and may also be called the front or top surface. The principal surface 90b is an example of a second principal surface, and may also be called the back or bottom surface. Wiring (not shown), via conductors (not shown), and the like are formed within the module substrate 90 and on the principal surface 90a.

The module substrate 90 may be, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

Each of the power amplifier circuits 11 (LB PA), 12 (MB PA), 13 (NTN PA), and 14 (HB PA) is implemented as a semiconductor integrated circuit on the main surface 90a of the module substrate 90. Silicon germanium (SiGe) or gallium arsenide (GaAs), for example, can be used as the semiconductor material for the integrated circuits. In this case, some or all of the multiple power amplifiers included in the power amplifier circuits 11 to 14 can be configured as heterojunction bipolar transistors (HBTs). Gallium nitride (GaN) or silicon carbide (SiC) can also be used as the semiconductor material for the integrated circuits. In this case, some or all of the multiple power amplifiers included in the power amplifier circuits 11 to 14 can be configured as HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Single crystal silicon (Si) can also be used as the semiconductor material. In this case, some or all of the multiple power amplifiers included in power amplifier circuits 11 to 14 may be configured using CMOS (Complementary Metal Oxide Semiconductor) or may be manufactured using an SOI (Silicon on Insulator) process. Each of power amplifier circuits 11 to 14 may be implemented as separate components in multiple semiconductor integrated circuits. Any combination of power amplifier circuits 11 to 14 may also be integrated into a single semiconductor integrated circuit.

Each of the baluns 15, 16, and 18 is formed by pattern wiring on the main surface 90a of the module substrate 90 and/or within the module substrate 90. Furthermore, the balun 17 is formed by wiring arranged on the main surface 90b of the module substrate 90 and/or within the module substrate 90. Some or all of the baluns 15-18 may be implemented as SMDs.

Matching circuits 41-44 are mounted on the main surface 90a of the module substrate 90 using chip inductors 411-441 (L). Matching circuits 41-44 may also include chip capacitors. Note that matching circuit 43 does not necessarily have to include chip inductor 431.

In this embodiment, the winding axis 411A of the chip inductor 411 is parallel to the y-axis. On the other hand, the winding axes 421A and 441A of the chip inductors 421 and 441 are parallel to the x-axis. In other words, in a plan view of the module substrate 90, the winding axis 411A is perpendicular to the winding axes 421A and 441A.

Note that some or all of winding axes 421A and 441A do not have to be perpendicular to winding axis 411A. In other words, in a plan view of module substrate 90, the angle formed by winding axes 411A and 421A is not limited to 90 degrees, and the angle formed by winding axes 411A and 441A is not limited to 90 degrees. These angles need only be non-0 degrees and may be in the range of 10 to 90 degrees, for example. In other words, in a plan view of module substrate 90, each of winding axes 421A and 441A need only be non-parallel to winding axis 411A. This makes it possible to suppress coupling between chip inductor 411 and each of chip inductors 421 and 441.

The power amplifier circuit 11, balun 15, and matching circuit 41 are arranged in an area 901 on the main surface 90a of the module substrate 90 and within the module substrate 90. Area 901 is a rectangular area that encloses, in minimum size, the area in which the power amplifier circuit 11, balun 15, and matching circuit 41 are arranged.

The power amplifier circuit 12, balun 16, and matching circuit 42 are arranged in an area 902 on the main surface 90a of the module substrate 90 and within the module substrate 90. The area 902 is a rectangular area that encloses, in minimum size, the area in which the power amplifier circuit 12, balun 16, and matching circuit 42 are arranged.

The power amplifier circuit 13, balun 17, and matching circuit 43 are arranged on the main surface 90b of the module substrate 90 and within the module substrate 90.

The power amplifier circuit 14, balun 18, and matching circuit 44 are arranged in an area 904 on the main surface 90a of the module substrate 90 and within the module substrate 90. The area 904 is a rectangular area that encloses, in minimum size, the area in which the power amplifier circuit 14, balun 18, and matching circuit 44 are arranged.

Low-noise amplifier circuits 21 and 22 (LB LNA), low-noise amplifier circuits 23 and 24 (MB LNA), low-noise amplifier circuits 25 and 26 (NTN LNA), and low-noise amplifier circuits 27 and 28 (HB LNA) are integrated into a single integrated circuit 20 and arranged in area 907 on the main surface 90a of the module substrate 90. Area 907 is a rectangular area that surrounds the integrated circuit 20 in its smallest size.

The integrated circuit 20 may be disposed on the main surface 90b of the module substrate 90. In this case, the power amplifier circuit 13 may be disposed on the main surface 90a of the module substrate 90, and the matching circuit 43 may also be disposed on the main surface 90a of the module substrate 90.

In a plan view of the module substrate 90, each of the low-noise amplifier circuits 25 and 26 in the integrated circuit 20 at least partially overlaps with the power amplifier circuit 13 and does not overlap with the balun 17. On the other hand, each of the low-noise amplifier circuits 23, 24, 27, and 28 in the integrated circuit 20 at least partially overlaps with the balun 17.

Ground vias 93 are formed on the module substrate 90, connecting the main surfaces 90a and 90b of the module substrate 90. The ground vias 93 are arranged between the balun 17 and the low-noise amplifier circuits 25 and 26. Furthermore, ground wiring 94 is formed on the module substrate 90. The ground wiring 94 is arranged between the balun 17 and the integrated circuit 20.

The semiconductor material for the integrated circuit 20 may be, for example, single crystal silicon (Si), gallium nitride (GaN), or silicon carbide (SiC). In this case, some or all of the multiple amplification transistors included in the integrated circuit 20 may be configured as field effect transistors (FETs). Note that bipolar transistors may also be used instead of FETs. The integrated circuit 20 may also be divided into multiple integrated circuits.

Duplexers 31 and 32 (LB DPX) are arranged in area 905 on the main surface 90a of module substrate 90. Area 905 is a rectangular area that encloses duplexers 31 and 32 in the smallest size. Duplexers 31 and 32 may be, but are not limited to, surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC resonant filters, dielectric resonant filters, or any combination thereof.

Duplexers 33 and 34 (MB DPX), duplexers 35 and 36, and duplexers 37 and 38 (HB DPX) are arranged in area 906 on the main surface 90a of module substrate 90. Area 906 is a rectangular area that encloses duplexers 33 to 38 in the smallest size. Duplexers 33 to 38 may be, but are not limited to, SAW filters, BAW filters, LC resonant filters, dielectric resonant filters, or any combination thereof.

In the duplexer 35, filter 351 (NTN TX) is located farther from the low-noise amplifier circuit 25 than filter 352 (NTN RX). Similarly, in the duplexer 36, filter 361 (NTN TX) is located farther from the low-noise amplifier circuit 26 than filter 362 (NTN RX).

The switch circuits 51 to 53 are integrated into a single integrated circuit 50 (ASW) and placed on the main surface 90a of the module substrate 90. The semiconductor material for the integrated circuit 50 can be, for example, single crystal silicon (Si), gallium nitride (GaN), or silicon carbide (SiC).

The switch circuits 61 to 64 are integrated into a single integrated circuit 60 (BSSW) and placed on the main surface 90a of the module substrate 90. The semiconductor material for the integrated circuit 60 can be, for example, single crystal silicon (Si), gallium nitride (GaN), or silicon carbide (SiC).

Each of the metal walls 911, 913, 914, and 915 is a copper shielding wall, and is provided to extend in the z-direction from the main surface 90a of the module substrate 90. The material of the metal walls 911, 913-915 is not limited to copper. For example, some or all of the material of the metal walls 911, 913-915 may be aluminum. Furthermore, the shape of the metal walls 911, 913-915 is not limited to a plate shape. For example, some or all of the metal walls 911, 913-915 may be multiple post electrodes.

Metal wall 911 is disposed between regions 901 and 902 and is connected to ground. This allows metal wall 911 to suppress coupling between chip inductor 411 and chip inductor 421 and coupling between chip inductor 411 and chip inductor 441.

Metal wall 913 is placed between the area including areas 901, 902, and 904 and the area including areas 905 and 906, and is connected to ground. This prevents the transmission signals amplified by power amplifier circuits 11-14 from leaking into the reception path.

Metal wall 914 is disposed between regions 905 and 906 and is connected to ground. This allows metal wall 914 to prevent harmonics of TN bands A and B, which are included in the low band group, from leaking into the signal paths of TN bands C, D, G, and H, which are included in the mid band group and high band group.

Metal wall 915 is placed between regions 905 and 907 and is connected to ground. This allows metal wall 915 to ensure isolation between low-noise amplifier circuits 21 to 28 and improve NF (Noise Figure).

Note that metal walls 911, 913 to 915 are optional components and do not necessarily need to be included in the high-frequency module 1.

The multiple external connection terminals 92 are arranged on the main surface 90b of the module substrate 90 and are connected to the input/output terminals and ground terminals of the motherboard (not shown). The multiple external connection terminals 92 may be, for example, copper post electrodes, but are not limited to this. For example, the multiple external connection terminals 92 may be solder electrodes.

5. Summary
As described above, the high-frequency module 1 according to this embodiment includes: a module substrate 90 having principal surfaces 90a and 90b facing each other; a duplexer 35 disposed on the module substrate 90, the duplexer 35 including a filter 351 having a pass band that includes the transmission band of NTN band E and a filter 352 having a pass band that includes the reception band of NTN band E; a power amplifier circuit 13 disposed on one of the principal surfaces 90a and 90b and connected to the filter 351; and a low-noise amplifier circuit 25 disposed on the other of the principal surfaces 90a and 90b and connected to the filter 352; and in a plan view of the module substrate 90, the power amplifier circuit 13 at least partially overlaps with the low-noise amplifier circuit 25.

This allows the power amplifier circuit 13 and low-noise amplifier circuit 25 for NTN band E to be arranged separately on the opposing main surfaces 90a and 90b of the module substrate 90, and further allows the power amplifier circuit 13 to be arranged so that it at least partially overlaps the low-noise amplifier circuit 25. This allows for the high-frequency module 1 to be made more compact, and the communication device 5 to be made more compact as well. NTN band E is not used for simultaneous communication with other bands, and there is a wide frequency gap between the transmission band and the reception band. This also reduces degradation of the transmission and/or reception characteristics that would otherwise occur if the power amplifier circuit 13 were arranged so that it overlaps the low-noise amplifier circuit 25.

Furthermore, for example, in the radio frequency module 1 according to this embodiment, the power amplifier circuit 13 may include a pair of power amplifiers T32 and T33 connected in parallel, and the radio frequency module 1 may further include a balun 17 including a primary coil 171 and a secondary coil 172 and formed by wiring arranged within the module substrate 90, with both ends of the primary coil 171 being connected to the output terminals of the pair of power amplifiers T32 and T33, respectively, and one end of the secondary coil 172 being connected to the filter 351.

In this way, the balun 17 is formed by wiring arranged within the module substrate 90, making it possible to further reduce the size of the high-frequency module 1.

Furthermore, for example, in the high-frequency module 1 according to this embodiment, the balun 17 does not need to overlap the low-noise amplifier circuit 25 in a plan view of the module substrate 90.

This means that the balun 17 does not overlap with the low-noise amplifier circuit 25, improving isolation between the transmit path and receive path.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a ground via 93 formed on the module substrate 90, and the ground via 93 may be disposed between the balun 17 and the low-noise amplifier circuit 25.

In this way, a ground via 93 is placed between the balun 17 and the low-noise amplifier circuit 25, improving isolation between the transmit path and the receive path.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a filter 372 disposed on the module substrate 90 and having a passband that includes the TN band G reception band, and a low-noise amplifier circuit 27 connected to the filter 372, and the balun 17 may at least partially overlap the low-noise amplifier circuit 27 in a plan view of the module substrate 90.

This allows the balun 17 for NTN band E to be placed overlapping the low-noise amplifier circuit 27 for TN band G. This allows for further miniaturization of the high-frequency module 1. Furthermore, because NTN band E is not used simultaneously with TN band G, degradation of the transmission and/or reception characteristics of NTN band E and TN band G can be suppressed.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a ground wiring 94 formed on the module substrate 90, and the ground wiring 94 may be disposed between the balun 17 and the low-noise amplifier circuit 27.

In this way, the ground wiring 94 is placed between the balun 17 and the low-noise amplifier circuit 27, thereby improving the isolation between the balun 17 and the low-noise amplifier circuit 27.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a plurality of external connection terminals 92 arranged on the main surface 90b, the power amplifier circuit 13 may be arranged on the main surface 90b, and the low-noise amplifier circuit 25 and duplexer 35 may be arranged on the main surface 90a.

This allows the power amplifier circuit 13 to be placed on the main surface 90b, improving heat dissipation to the motherboard.

Furthermore, for example, in the high-frequency module 1 according to this embodiment, filter 351 may be positioned farther from the low-noise amplifier circuit 25 than filter 352.

This allows the filter 351 for the NTN band E transmit signal to be placed relatively far away from the low-noise amplifier circuit 25, improving isolation between the transmit path and receive path.

Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a metal wall 914 disposed between the low-noise amplifier circuit 25 and the duplexer 35.

In this way, a metal wall 914 is placed between the low-noise amplifier circuit 25 and the duplexer 35, thereby improving isolation between the transmission path and the reception path.

Furthermore, for example, in the radio frequency module 1 according to this embodiment, NTN band E may be n256 or n255 for 5G NR.

This allows the high-frequency module 1 to support combinations of n256 and n255 for 5GNR.

Furthermore, the communication device 5 according to this embodiment includes an RFIC 3 that processes high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and antennas 2a, 2b, and 2c.

This allows the effects of the high-frequency module 1 to be realized in the communication device 5.

(Other embodiments)
Although the high-frequency module and communication device according to the present invention have been described above based on the embodiments, the high-frequency module and communication device according to the present invention are not limited to the above embodiments. The present invention also includes other embodiments realized by combining any of the components in the above embodiments, modifications obtained by applying various modifications to the above embodiments that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-mentioned high-frequency module and communication device.

For example, in the circuit configurations of the radio frequency modules and communication devices according to the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths shown in the drawings. For example, an impedance matching circuit may be connected between duplexers 31-38 and switch circuits 51-53. Also, for example, couplers may be connected between switch circuits 51-53 and antenna connection terminals 101-103.

Furthermore, for example, the high-frequency module 1 may include a resin member that covers the components on the main surfaces 90a and 90b of the module substrate 90. This allows the high-frequency module 1 to ensure reliability, such as mechanical strength and moisture resistance, of the components on the main surfaces 90a and 90b. Furthermore, the high-frequency module 1 may include a metal shielding layer that covers at least a portion of the surface of the resin member. This allows the high-frequency module 1 to prevent external noise from entering the electronic components that make up the high-frequency module 1 and to prevent noise generated in the high-frequency module 1 from interfering with other modules or other devices.

The following describes the features of the high-frequency module and communication device described based on the above embodiments.

<1>
a module substrate having a first main surface and a second main surface facing each other;
a duplexer disposed on the module substrate, the duplexer including a first filter having a passband including a transmission band of a non-terrestrial network (NTN) band, and a second filter having a passband including a reception band of the NTN band;
a power amplifier circuit disposed on one of the first main surface and the second main surface and connected to the first filter;
a first low-noise amplifier circuit disposed on the other of the first main surface and the second main surface and connected to the second filter,
In a plan view of the module substrate, the power amplifier circuit at least partially overlaps with the first low-noise amplifier circuit.
High frequency module.

<2>
the power amplifier circuit includes a pair of power amplifiers connected in parallel;
the high-frequency module further includes a balun including a primary coil and a secondary coil and formed by wiring disposed within the module substrate;
Both ends of the primary coil are connected to the output terminals of the pair of power amplifiers, respectively;
One end of the secondary coil is connected to the first filter.
The high-frequency module according to <1>.

<3>
In a plan view of the module substrate, the balun does not overlap the first low-noise amplifier circuit.
The high-frequency module according to <2>.

＜4＞
the high-frequency module further includes a ground via formed in the module substrate;
the ground via is disposed between the balun and the first low-noise amplifier circuit.
The high-frequency module according to <3>.

<5>
the high-frequency module further includes a third filter disposed on the module substrate and having a passband including a reception band of a terrestrial network (TN) band;
a second low-noise amplifier circuit connected to the third filter;
In a plan view of the module substrate, the balun at least partially overlaps the second low-noise amplifier circuit.
<4> The high-frequency module according to any one of <2> to <4>.

<6>
the high-frequency module further includes a ground wiring formed on the module substrate;
the ground wiring is disposed between the balun and the second low-noise amplifier circuit.
<5> The high-frequency module according to <5>.

＜７＞
the high-frequency module further includes a plurality of external connection terminals arranged on the second main surface,
the power amplifier circuit is disposed on the second main surface,
the first low-noise amplifier circuit and the duplexer are disposed on the first main surface.
<6> The high-frequency module according to any one of <1> to <6>.

＜8＞
the first filter is disposed farther from the first low-noise amplifier circuit than the second filter;
The high-frequency module according to <7>.

＜９＞
the high-frequency module further includes a metal wall disposed between the first low-noise amplifier circuit and the duplexer.
<7> or <8>, wherein the high-frequency module is

<10>
The NTN band is n256 or n255 for 5G NR;
<9> The high-frequency module according to any one of <1> to <9>.

<11>
a signal processing circuit for processing high frequency signals;
and a high-frequency module according to any one of <1> to <10> configured to transmit the high-frequency signal between the signal processing circuit and an antenna.
Communication equipment.

This invention can be widely used as a high-frequency module placed in the front end of communication devices such as mobile phones.

1 High frequency module 2a, 2b, 2c Antenna 3 RFIC
4. BBIC
5 Communication device 11, 12, 13, 14 Power amplifier circuit 15, 16, 17, 18, B14, B24, B34, B44 Balun 20, 50, 60 Integrated circuit 21, 22, 23, 24, 25, 26, 27, 28 Low noise amplifier circuit 31, 32, 33, 34, 35, 36, 37, 38 Duplexer 41, 42, 43, 44 Matching circuit 51, 52, 53, 61, 62, 63, 64 Switch circuit 90 Module substrate 90a, 90b Main surface 92 External connection terminal 93 Ground via 94 Ground wiring 101, 102, 103 Antenna connection terminal 111, 112, 113, 114 High frequency input terminal 121, 122, 123, 124, 125, 126, 127, 128 High frequency output terminals 151, 161, 171, 181, L141, L241, L341, L441 Primary coil 152, 162, 172, 182, L142, L242, L342, L442 Secondary coil 311, 312, 321, 322, 331, 332, 341, 342, 351, 352, 361, 362, 371, 372, 381, 382 Filter 411, 421, 431, 441 Chip inductor 411A, 421A, 441A Winding shaft 510, 520, 530, 610, 620, 630, 640 Common terminals 511, 512, 521, 522, 523, 524, 531, 532, 611, 612, 621, 622, 631, 632, 641, 642 Selection terminals 901, 902, 904, 905, 906, 907 Areas 911, 913, 914, 915 Metal walls T11, T12, T13, T21, T22, T23, T31, T32, T33, T41, T42, T43 Power amplifier

Claims (11)

a module substrate having a first main surface and a second main surface facing each other;
a duplexer disposed on the module substrate, the duplexer including a first filter having a passband including a transmission band of a non-terrestrial network (NTN) band, and a second filter having a passband including a reception band of the NTN band;
a power amplifier circuit disposed on one of the first main surface and the second main surface and connected to the first filter;
a first low-noise amplifier circuit disposed on the other of the first main surface and the second main surface and connected to the second filter,
In a plan view of the module substrate, the power amplifier circuit at least partially overlaps with the first low-noise amplifier circuit.
High frequency module. the power amplifier circuit includes a pair of power amplifiers connected in parallel;
the high-frequency module further includes a balun including a primary coil and a secondary coil and formed by wiring disposed within the module substrate;
Both ends of the primary coil are connected to the output terminals of the pair of power amplifiers, respectively;
One end of the secondary coil is connected to the first filter.
The high frequency module according to claim 1 . In a plan view of the module substrate, the balun does not overlap the first low-noise amplifier circuit.
The high frequency module according to claim 2 . the high-frequency module further includes a ground via formed in the module substrate;
the ground via is disposed between the balun and the first low-noise amplifier circuit.
The high frequency module according to claim 3 . the high-frequency module further includes a third filter disposed on the module substrate and having a passband including a reception band of a terrestrial network (TN) band;
a second low-noise amplifier circuit connected to the third filter;
In a plan view of the module substrate, the balun at least partially overlaps the second low-noise amplifier circuit.
The high frequency module according to any one of claims 2 to 4. the high-frequency module further includes a ground wiring formed on the module substrate;
the ground wiring is disposed between the balun and the second low-noise amplifier circuit.
The high frequency module according to claim 5 . the high-frequency module further includes a plurality of external connection terminals arranged on the second main surface,
the power amplifier circuit is disposed on the second main surface,
the first low-noise amplifier circuit and the duplexer are disposed on the first main surface.
The high frequency module according to any one of claims 1 to 6. the first filter is disposed farther from the first low-noise amplifier circuit than the second filter;
The high frequency module according to claim 7 . the high-frequency module further includes a metal wall disposed between the first low-noise amplifier circuit and the duplexer.
9. The high frequency module according to claim 7. The NTN band is n256 or n255 for 5G NR;
The high frequency module according to any one of claims 1 to 9. a signal processing circuit for processing high frequency signals;
and a high-frequency module according to any one of claims 1 to 10, configured to transmit the high-frequency signal between the signal processing circuit and an antenna.
Communication equipment.