[go: up one dir, main page]

WO2024179385A1 - Chip module and preparation method therefor, optical module, communication system, and electronic device - Google Patents

Chip module and preparation method therefor, optical module, communication system, and electronic device Download PDF

Info

Publication number
WO2024179385A1
WO2024179385A1 PCT/CN2024/078382 CN2024078382W WO2024179385A1 WO 2024179385 A1 WO2024179385 A1 WO 2024179385A1 CN 2024078382 W CN2024078382 W CN 2024078382W WO 2024179385 A1 WO2024179385 A1 WO 2024179385A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
temperature
interface material
spreader
thermal interface
Prior art date
Application number
PCT/CN2024/078382
Other languages
French (fr)
Chinese (zh)
Inventor
程明
杨成鹏
朱宁军
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Publication of WO2024179385A1 publication Critical patent/WO2024179385A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8582Means for heat extraction or cooling characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8581Means for heat extraction or cooling characterised by their material

Definitions

  • the embodiments of the present application relate to the field of electronic technology, and in particular to a chip module and a method for preparing the same, an optical module, a communication system, and an electronic device.
  • the current chip heat dissipation method is to set a thermal interface material on the chip surface and then directly contact the conductor to dissipate heat.
  • the optical module includes: an upper shell 200, a bottom plate 300, a substrate 100, and a chip 101 arranged on the substrate 100, wherein the upper shell 200 and the bottom plate 300 enclose a space for accommodating the substrate 100 and the chip 101, wherein the lower surface of the upper shell 200 is provided with at least one second bump 2012 for contacting the upper surface of the chip 101, and when working, the heat generated on the chip 101 can be transferred to the upper shell 200 through the second bump 2012 for heat dissipation.
  • the chip module 2 in FIG13 can be used in electronic devices such as routers and servers. As shown in FIG13 , the chip module 2 includes: a chip 101, a heat sink 600, a circuit board 400 and a substrate 100, wherein the chip 101 is arranged on the circuit board 400, the heat sink 600 is fixed on the chip 101, and the chip 101 is in contact with the heat sink 600 through the thermal interface material 103 for heat dissipation.
  • the embodiments of the present application provide a chip module and a preparation method thereof, an optical module, a communication system and an electronic device to improve the heat dissipation performance of a chip.
  • the first aspect of the embodiment of the present application provides a chip module, including: a circuit board, and a chip arranged on the circuit board; a heat dissipation structure is arranged on the side of the chip away from the circuit board; a thermal interface material is arranged between the chip and the heat dissipation structure; a temperature balancing plate is arranged between the chip and the thermal interface material, and/or between the thermal interface material and the heat dissipation structure; wherein the thermal expansion coefficient of the temperature balancing plate matches the thermal expansion coefficient of the chip, and the thermal conductivity of the temperature balancing plate is greater than the thermal conductivity of the thermal interface material.
  • a temperature balancing plate with a high thermal conductivity is arranged on the surface of the chip, and the temperature balancing performance is better, and the heat can be better dispersed, thereby reducing the chip power density, so as to reduce the temperature difference between the chip and the thermal interface material, thereby reducing the chip operating temperature, that is, the chip junction temperature, and improving the chip heat dissipation performance.
  • the thermal expansion coefficients of the temperature balancing plate and the chip are close, which can reduce the thermal stress between the chip and the temperature balancing plate and avoid separation and cracking of the welding surface.
  • the size of the temperature spreader is greater than or equal to the size of the chip.
  • the surface of the temperature spreader and the chip can be completely fitted together, increasing the contact area between the temperature spreader and the chip.
  • the size of the temperature spreader is larger, which improves the thermal conductivity of the temperature spreader to ensure that the heat of the chip can be fully transferred through the temperature spreader.
  • the temperature spreader includes: a first temperature spreader, the first temperature spreader is arranged between the chip and the thermal interface material, the first temperature spreader is connected to the chip by welding, and the welding surface of the chip and the welding surface of the first temperature spreader are plated with a metal film.
  • the welding performance of the chip and the first temperature spreader can be improved, so that the chip and the first temperature spreader can be better connected by solder welding.
  • the first temperature spreader includes a first part and a second part, the first part is arranged close to the chip, the second part is arranged close to the thermal interface material, the size of the first part is the same as the size of the chip, and the size of the second part is larger than the size of the first part.
  • the temperature balancing plate includes: a second temperature balancing plate, the second temperature balancing plate is arranged between the thermal interface material and the heat dissipation structure, the heat dissipation structure and the second temperature balancing plate are welded and connected, and the welding surface of the heat sink and the welding surface of the second temperature balancing plate are welded.
  • the welding performance of the heat dissipation structure and the second temperature balancing plate can be improved, so that the heat dissipation structure and the second temperature balancing plate can be better connected by soldering.
  • the temperature-regulating plate is made of diamond or an alloy material containing diamond. Therefore, the material of the temperature-regulating plate includes diamond, whose thermal expansion coefficient is close to that of the chip, so as to avoid chip warping during welding or use, and diamond has a high thermal conductivity, which can better dissipate heat.
  • the thermal interface material includes: thermally conductive gel, thermally conductive silicone grease or thermally conductive sheet.
  • the thermal interface material uses a flexible thermally conductive material such as thermally conductive gel, and the fluidity of the flexible thermal interface material can be used to fully fill the gap between adjacent structures, so that two adjacent structures connected by the thermal interface material are in full contact, so that the heat generated by the chip can be timely transferred to the heat dissipation structure through the flexible thermal interface material and dissipated, thereby enhancing the heat dissipation performance of the optical module and improving the reliability of the optical module.
  • a stopper is provided on the circuit board, and the height of the stopper from the circuit board is higher than the height of the chip from the circuit board.
  • the stopper can support the device above the chip to prevent the solder above the chip from being squeezed out during welding, thereby better controlling the thickness of the solder after welding.
  • the heat dissipation structure includes: a cold plate, a temperature equalizing plate, and an evaporative heat sink, thereby further improving the heat dissipation performance of the chip module.
  • the second aspect of the embodiment of the present application provides an optical module, comprising: a housing, and the chip module as described above, wherein the heat dissipation structure is a part of the housing, or the heat dissipation structure is arranged outside the housing.
  • the optical module adopts the chip module as described above, and has better heat dissipation performance.
  • the optical module further includes: a substrate and an optical device, and the optical device and the chip module are arranged on the substrate, thereby facilitating the control of the optical module.
  • the housing includes: an upper shell and a bottom plate
  • the upper shell includes: a top plate and a bracket, the bracket is connected to the bottom plate, and the base plate is connected to the bottom plate.
  • the top plate is provided with a first bump and a second bump
  • the first bump is connected to the optical device through a thermal interface material
  • the second bump is connected to the chip module.
  • a communication system comprising: a data source, an optical channel, and the optical module as described above, wherein the data source is used to send a data signal to the optical module, and the optical module is used to convert the data signal into an optical signal and transmit it through the optical channel.
  • the communication system adopts the optical module, and has better heat dissipation performance.
  • an electronic device comprising: a substrate, and the chip module as described above, the chip module being arranged on the substrate.
  • the electronic device adopts the chip module as described above, and has better heat dissipation performance.
  • the electronic device is a router or a server.
  • the chip module has a wider application range.
  • a method for preparing a chip module comprising: soldering a chip on a circuit board; stacking a temperature spreader and a thermal interface material on a side of the chip away from the circuit board; the thermal expansion coefficient of the temperature spreader matches the thermal expansion coefficient of the chip, and the thermal conductivity of the temperature spreader is greater than the thermal conductivity of the thermal interface material; and arranging a heat dissipation structure on a side of the stacked temperature spreader and the thermal interface material away from the chip, wherein the temperature spreader is provided between the chip and the thermal interface material, and/or between the thermal interface material and the heat dissipation structure.
  • the method before soldering the chip to the circuit board, the method further includes: coating a metal film on the soldering surface of the temperature spreader, the soldering surface of the chip and/or the soldering surface of the heat dissipation structure.
  • the method before setting the temperature equalizer and thermal interface material on the side of the chip away from the circuit board, the method also includes: setting a limiter on the surface of the circuit board or the chip, wherein the height of the limiter from the circuit board is higher than the height of the chip from the circuit board.
  • FIG1 is a schematic diagram of the structure of an optical module provided by the prior art
  • FIG2 is a schematic diagram of the structure of an optical module provided in an embodiment of the present application.
  • FIG3 is a schematic diagram of the structure of another optical module provided in an embodiment of the present application.
  • FIG4 is a schematic diagram of the structure of another optical module provided in an embodiment of the present application.
  • FIG5 is a flow chart of a method for preparing a chip module provided in an embodiment of the present application.
  • Figures 6, 7, 8 and 9 are schematic diagrams of product structures obtained after executing the steps in Figure 5;
  • FIG10 is a flow chart of another method for preparing a chip module provided in an embodiment of the present application.
  • FIG11 is a flow chart of another method for preparing a chip module provided in an embodiment of the present application.
  • FIG12 is a three-dimensional diagram of a chip module provided in an embodiment of the present application.
  • FIG13 is a schematic diagram of the structure of a chip module provided by the prior art.
  • FIG14 is a schematic diagram of the structure of a chip module provided in an embodiment of the present application.
  • FIG15 is a schematic diagram of the structure of another chip module provided in an embodiment of the present application.
  • FIG16 is a schematic diagram of the structure of another chip module provided in an embodiment of the present application.
  • FIG. 17 is a schematic diagram of the structure of a chip module provided in an embodiment of the present application.
  • first”, “second”, etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.
  • a feature defined as “first”, “second”, etc. may explicitly or implicitly include one or more of the feature.
  • “plurality” means two or more.
  • An embodiment of the present application provides a communication system, including: a data source, an optical channel, and an optical module, wherein the data source is used to send a data signal to the optical module, and the optical module is used to convert the data signal into an optical signal and transmit it through the optical channel.
  • Figure 2 is a schematic diagram of the structure of the first optical module provided in the embodiment of the present application.
  • the optical module 1 includes: a housing, a substrate 100, wherein one or more chips 101 and an optical device 102 are provided on the substrate 100, and the substrate 100, the chip 101 and the optical device 102 are all located in the housing.
  • the housing includes: an upper housing 200 and a bottom plate 300, the upper housing 200 and the bottom plate 300 are buckled together, and the substrate 100 is located in the area enclosed by the upper housing 200 and the bottom plate 300.
  • the upper shell 200 is composed of, for example, a top plate 201 and a bracket 202 .
  • the bracket 202 is supported on the bottom plate 300 , and the bracket 202 is disposed around the chip 101 .
  • the embodiment of the present application does not limit the molding method of the bracket 202 and the top plate 201.
  • the bracket 202 can be made of the same material as the top plate 201.
  • the bracket 202 can be die-cast as a whole with the top plate 201, and the end of the bracket 202 away from the top plate 201 can be fixedly connected to the bottom plate 300 by a thermally conductive adhesive.
  • the bracket 202 and the top plate 201 can be die-cast separately, and the bracket 202, for example, includes a first end and a second end relative to each other.
  • the first end of the bracket 202 can be fixedly connected to the top plate 201 by, for example, a thermally conductive adhesive
  • the second end of the bracket 202 can be fixedly connected to the bottom plate 300 by, for example, a thermally conductive adhesive.
  • the embodiment of the present application does not limit the specific structure of the bracket 202.
  • the bracket 202 can adopt an annular structure, and the bracket 202 is evenly supported at the edge of the circuit board, for example.
  • the bracket 202 can support the top plate 201 on the bottom plate 300 and evenly distribute the gravity of the top plate 201 on the bottom plate 300 .
  • the embodiment of the present application does not limit the connection method between the upper shell 200 and the bottom plate 300.
  • the upper shell 200 and the bottom plate 300 are fixedly connected by bolts.
  • the substrate 100 includes a first surface and a second surface opposite to each other, the first surface of the substrate 100 is connected to the bottom plate 300, and the second surface of the substrate 100 is away from the bottom plate 300.
  • the first surface of the substrate 100 is connected to the bottom plate 300 via a connector.
  • One or more chips 101 and optical devices 102 are disposed on the second surface of the substrate 100 .
  • the optical device 102 includes a first surface and a second surface opposite to each other.
  • the first surface of the optical device 102 is connected to the second surface of the substrate 100
  • the second surface of the optical device 102 is connected to the top plate 201 via the thermal interface material 103 .
  • a first bump 2011 is provided on one side of the top plate 201 close to the optical device, the first bump 2011 is opposite to the optical device 102, and the shape of the first bump 2011 matches the shape of the optical device 102, and the optical device 102 is connected to the first bump 2011 through a thermal interface material (TIM) 103. Therefore, by providing the first bump 2011, the housing can be fully in contact with the optical device 102 through the first bump 2011, thereby improving the heat dissipation performance of the optical module.
  • TIM thermal interface material
  • the thermal interface material 103 may be a flexible thermally conductive material.
  • the thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or thermally conductive sheet.
  • the chip 101 is disposed on the circuit board 400 and is electrically connected to the substrate 100 through the circuit board 400. In some embodiments of the present application, the circuit board 400 is electrically connected to the substrate 100 through the first electrical connector 401. In some embodiments of the present application, the chip 101 is electrically connected to the circuit board 400 through the second electrical connector 402.
  • first electrical connector 401 and the second electrical connector 402. may include a plurality of uniformly arranged solder balls.
  • a second bump 2012 is provided on one side of the top plate 201 close to the chip 101, the second bump 2012 is, for example, opposite to the chip 101, and the shape of the second bump 2012 matches the shape of the chip 101, and the chip 101 can be connected through the thermal interface material 103 and the second bump 2012.
  • the housing can be fully in contact with the chip module 101 through the second bump 2012, thereby improving the heat dissipation performance of the optical module.
  • the thermal interface material 103 may be a flexible thermally conductive material.
  • the thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or a thermally conductive sheet.
  • an embodiment of the present application provides an improved optical module 1.
  • the optical module 1 further includes a temperature-distributing plate 500 .
  • the temperature-distributing plate 500 and the thermal interface material 103 may be disposed between the chip 101 and the second bump 2012 to evenly disperse the heat generated by the chip 101 and reduce the power density of the chip 101 .
  • the thermal expansion coefficient of the temperature-regulating plate matches the thermal expansion coefficient of the chip.
  • the thermal expansion coefficient of the temperature-regulating plate matches the thermal expansion coefficient of the chip, which means that the thermal expansion coefficient of the temperature-regulating plate is close to the thermal expansion coefficient of the chip.
  • the thermal expansion coefficient of the temperature-regulating plate and the thermal expansion coefficient of the chip may differ by 3m/K-7m/K. Therefore, the thermal expansion coefficients of the temperature-regulating plate and the chip are close, which can reduce the thermal stress between the chip and the temperature-regulating plate and avoid separation and cracking of the welding surface.
  • Thermal conductivity of the temperature plate 500 is greater than the thermal conductivity of the material of the thermal interface 103.
  • Thermal conductivity also known as “thermal conductivity” is a measure of the thermal conductivity of a material, and refers to the amount of heat transferred through a unit horizontal cross-sectional area per unit time when the vertical downward temperature gradient is 1°C/m.
  • the thermal conductivity of the temperature spreader is higher and the temperature uniformity performance is better, which can better disperse the heat to reduce the temperature difference between the chip and the thermal interface material and improve the chip's heat dissipation performance.
  • the material of the temperature spreader 500 includes diamond or diamond copper alloy, diamond silver alloy, diamond aluminum alloy, etc. Therefore, the material of the temperature spreader includes diamond, whose thermal expansion coefficient is close to that of the chip, so as to avoid chip warping during welding or use, and the thermal conductivity of diamond is high, so as to better dissipate heat.
  • the embodiment of the present application does not limit the scope of the temperature balancing plate 500.
  • the temperature balancing plate 500 can be only arranged at a position where the upper shell 200 is opposite to the chip 101, so as to connect the chip 101 and the upper shell 200, and transfer the heat generated by the substrate 100 or the chip 101 to the upper shell 200, and then the upper shell 200 transfers the heat to the external environment.
  • the optical module 1 includes a temperature balancing plate 500 , which is disposed on the surface of the top plate 201 close to the chip 101 , and the thermal interface material 103 is located between the temperature balancing plate 500 and the chip 101 .
  • the optical module 1 includes a temperature spreader 500 , which is disposed on a surface of the chip 101 close to the top plate 201 , and the thermal interface material 103 is located between the temperature spreader 500 and the second bump 2012 .
  • the temperature balance plate 500 may include a first part and a second part, the first part is arranged close to the chip 101, the second part is arranged close to the thermal interface material 103, the size of the first part is the same as the size of the chip 101, and the size of the second part is larger than the size of the first part.
  • the optical module 1 includes two temperature spreaders 500: a first temperature spreader 500 and a second temperature spreader 700.
  • the first temperature spreader 500 is disposed on a surface of the top plate 201 close to the chip 101
  • the second temperature spreader 700 is disposed on a surface of the chip 101 close to the top plate 201.
  • the thermal interface material 103 is located between the first temperature spreader 500 and the second temperature spreader 700.
  • the temperature-regulating plate 500 can be processed into a shape that is the same as or similar to that of the chip 101 .
  • the second temperature stabilizer 700 may include a first part and a second part, the first part is arranged close to the chip 101, the second part is arranged close to the thermal interface material 103, the size of the first part is the same as the size of the chip 101, and the size of the second part is larger than the size of the first part.
  • the size of the temperature equalizer 500 is greater than or equal to the size of the chip 101, so that the temperature equalizer 500 and the upper surface of the chip 101 can be completely fitted together, thereby increasing the contact area between the temperature equalizer 500 and the chip 101 and improving the thermal conductivity of the temperature equalizer 500 to ensure that the heat of the chip 101 can be fully transferred through the temperature equalizer 500.
  • a high thermal conductivity temperature spreader 500 is welded on the chip surface to reduce the chip power density.
  • the temperature difference generated by the thermal interface material will be reduced, thereby reducing the chip operating temperature, that is, the chip junction temperature.
  • installing a temperature-averaging sheet can reduce overheating and facilitate heat transfer.
  • the superheat is the temperature difference between the outer shell surface and the working fluid inside the heat dissipation structure when the heat of the phase change or liquid cooling heat dissipation structure such as the temperature equalizer is transferred from the heat source to the surface of the heat dissipation structure.
  • the embodiment of the present application also provides a method for preparing an optical module 1. As shown in FIG5 , the method for preparing a chip module comprises the following steps:
  • the substrate 100 may be first fixed on the bottom plate 300 , and then the chip 101 may be fixed on the substrate 100 .
  • the substrate 100 may be fixed on the bottom plate 300 by welding.
  • the chip 101 may be fixed on the substrate 100 by welding.
  • the chip 101 may be welded to the substrate 100 by a reflow process.
  • the chip 101 is disposed on the circuit board 400 and is electrically connected to the substrate 100 through the circuit board 400. In some embodiments of the present application, the circuit board 400 is electrically connected to the substrate 100 through the first electrical connector 401. In some embodiments of the present application, the chip 101 is electrically connected to the circuit board 400 through the second electrical connector 402.
  • first electrical connector 401 and the second electrical connector 402. may include a plurality of uniformly arranged solder balls.
  • the optical module 1 further includes an optical device 102.
  • the optical device 102 may be fixed on the substrate 100 by welding.
  • a temperature balancing sheet and a thermal interface material are stacked on a side of the chip away from the circuit board.
  • the shell is thermally connected to the chip through the temperature balancing plate 500 .
  • the top plate 201 and the chip 101 respectively include a first surface and a second surface opposite to each other, wherein the first surface of the chip 101 is close to the substrate 100, the second surface of the chip 101 is away from the substrate 100, the first surface of the top plate 201 faces the second surface of the chip 101, and the second surface of the top plate 201 is away from the chip 101.
  • the temperature spreader 500 is, for example, disposed between the top plate 201 and the chip 101.
  • the temperature balancing plate is disposed between the chip 101 and the thermal interface material 103 , and/or between the thermal interface material 103 and the top plate 201 .
  • the thermal expansion coefficient of the temperature spreader 500 matches the thermal expansion coefficient of the chip 101 , and the thermal conductivity of the temperature spreader 500 is greater than the thermal conductivity of the thermal interface material 103 .
  • the optical module 1 includes a temperature spreader 500 , which is disposed on a surface of the top plate 201 close to the chip 101 , and the thermal interface material 103 is located between the temperature spreader 500 and the chip 101 .
  • the optical module 1 includes a temperature spreader 500 , which is disposed on a surface of the chip 101 close to the top plate 201 , and the thermal interface material 103 is located between the temperature spreader 500 and the second bump 2012 .
  • the optical module 1 includes two temperature spreaders 500: a first temperature spreader 500 and a second temperature spreader 700.
  • the first temperature spreader 500 is disposed on a surface of the top plate 201 close to the chip 101
  • the second temperature spreader 700 is disposed on a surface of the chip 101 close to the top plate 201.
  • the thermal interface material 103 is located between the first temperature spreader 500 and the second temperature spreader 700.
  • the thermal interface material 103 may be a flexible thermally conductive material.
  • the thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or thermally conductive sheet.
  • the fluidity of the flexible thermal interface material 103 can be used to fully fill the gaps between adjacent structures, and the air between adjacent structures can be squeezed so that the adjacent structures are in full contact, so that the heat generated by the chip 101 can be timely transferred to the shell through the temperature equalizer 500 and the flexible thermal interface material 103 and dissipated, thereby enhancing the heat dissipation performance of the optical module 1 and improving the reliability of the optical module 1.
  • a heat dissipation structure is provided on a side of the stacked temperature-balancing plate and the thermal interface material away from the chip 101 .
  • the upper shell 200 can be covered on the bottom plate 300 , so that the second bumps 2012 on the upper shell 200 are pressed onto the thermal interface material 103 .
  • the upper shell 200 can serve as a heat dissipation structure to transfer the heat generated by the chip 101 to the air.
  • a heat sink may be provided on the side of the upper shell 200 corresponding to the chip 101.
  • the heat sink includes: a copper or aluminum heat sink, a vapor chamber (VC), an evaporator, and a liquid cooling heat sink (including a cold plate).
  • the radiator shell material is copper or aluminum, and the inside is liquid working medium.
  • the cold plate is a liquid cooling component.
  • the liquid working medium in the cold plate can take away the heat.
  • the evaporator is a phase-change heat dissipation structural component.
  • the internal liquid working fluid undergoes phase change and absorbs heat, taking away the heat.
  • the heat sink includes: a sealed vacuum cavity, wherein the cavity is filled with a coolant, and a capillary structure is provided on the inner wall of the cavity.
  • the coolant may be a refrigerant such as Freon or water.
  • the capillary structure is, for example, a copper mesh micro-evaporator.
  • the bottom of the radiator contacts with the chip 101 and is heated.
  • the heat source heats the copper mesh micro-evaporator.
  • the coolant at the bottom of the vacuum chamber is heated and quickly evaporates into hot air in the vacuum ultra-low pressure environment.
  • the interior of the radiator adopts a vacuum design, which allows the hot air to circulate more quickly in the copper mesh micro-environment.
  • the hot air then rises due to the heat, dissipates heat after encountering the cold source on the upper part of the radiator, and condenses into liquid again.
  • the condensed coolant flows back to the evaporation source at the bottom of the radiator through the copper micro-structure capillary channel.
  • the refluxed coolant is heated by the evaporator and vaporizes again after passing through the copper mesh micro-tube, and the action is repeated in this way.
  • the evaporation and condensation process of the radiator is carried out in the vacuum chamber, which is similar to the heat conduction principle of the heat pipe 203, but the heat in the vacuum chamber is conducted on a two-dimensional surface, and the heat dissipation of the heat pipe 203 belongs to one-dimensional linear heat conduction. Compared with the heat pipe 203, the radiator has a higher thermal conductivity efficiency.
  • the temperature-regulating plate 500 is connected to the chip 101 by welding.
  • the welding process of the chip 101 and the temperature-regulating plate 500 includes: placing a prefabricated solder sheet on the surface of the chip 101, and then covering the temperature-regulating plate 500 on the surface of the solder sheet, applying pressure on the top of the temperature-regulating plate 500 through a pressing block or an elastic structure, and then welding in a vacuum environment, and using a reducing atmosphere to surround the sample during the welding process.
  • the melting point of the solder sheet is 120 to 180°C
  • the welding temperature is about 120 to 180°C.
  • the welding surface between the temperature-balancing plate 500 and the chip 101 may be metallized.
  • the method further includes:
  • the temperature-regulating plate 500 is connected to the top plate 201 by welding with the solder 104.
  • a metal film may be plated on the surface where the second bump 2012 contacts the solder 104, that is, the welding surface of the second bump 2012, and on the surface where the temperature-regulating plate 500 contacts the solder 104, that is, the welding surface of the temperature-regulating plate 500.
  • the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.
  • the temperature-distributing plate 500 and the chip 101 are connected by soldering 104.
  • the surface of the chip 101 in contact with the solder 104 i.e., the surface of the chip 101
  • a metal film is plated on the welding surface of the temperature spreader 500 and the surface in contact with the solder 104, that is, the welding surface of the temperature spreader 500.
  • the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.
  • the first temperature spreader 500 is welded to the top plate 201 via a first layer of solder 104
  • the second temperature spreader 700 is welded to the chip 101 via a second layer of solder 106 .
  • a first metal film 1071 can be plated on the surface where the second temperature balancing plate 700 is connected to the second layer of solder 106, that is, the welding surface of the second temperature balancing plate 700
  • a second metal film 1072 can be plated on the surface where the chip 101 is connected to the second layer of solder 106, that is, the welding surface of the chip 101
  • a third metal film 1051 can be plated on the surface where the second bump 2012 of the top plate 201 is connected to the first layer of solder 104, that is, the welding surface of the second bump 2012 of the top plate 201
  • a fourth metal film 1052 can be plated on the surface where the first temperature balancing plate 500 is connected to the first layer of solder 104, that is, the welding surface of the first temperature balancing plate 500.
  • the material of the metal film includes: titanium Ti, nickel Ni, and gold Au
  • the method further includes: cleaning the welding surface of the temperature plate and the welding surface of the chip 101.
  • the coated surface of the chip 101 and the surface of the temperature spreader 500 may be cleaned.
  • the cleaning process includes organic cleaning, plasma cleaning, and the like.
  • a protective member 1010 may be further disposed around the chip 101 to protect the chip 101 .
  • the method before setting the temperature equalizer and thermal interface material 103 on the side of the chip 101 away from the circuit board in step S102, the method also includes:
  • the stopper is higher than the chip 101.
  • the height of the stopper from the circuit board is higher than the height of the chip from the circuit board.
  • the stopper is about 100 to 250 um higher than the surface of the chip 101, which is used to control the thickness of the solder after welding.
  • the embodiments of the present application do not limit the structure of the limiter.
  • the limiter is a ring structure.
  • the limiter can be a columnar structure, and the limiter can be one or more, arranged on the surface of the circuit board or chip.
  • the heat generated by the chip 101 can be transferred to the temperature equalizer 500, and the heat is dispersed under the action of the temperature equalizer 500, thereby reducing the power density of the chip 101 and the temperature difference between the chip 101 and the thermal interface material 103, so that the heat can be better transferred to the shell through the thermal interface material 103, thereby improving the heat dissipation efficiency of the optical module 1.
  • the optical module 1 in order to conduct the heat transferred to the shell to the external environment to achieve a better heat dissipation effect, also includes a heat dissipation fin connected to the shell, and the heat dissipation fin is arranged on a side of the shell away from the chip 101.
  • the heat emitted by chip 101 can be transferred to the shell through the heat-conducting components, and then transferred to the heat sink fins by the shell. Since the heat sink fins have a large heat dissipation area, they can use the external cooling airflow to dissipate the accumulated heat, further improving the heat dissipation efficiency of the chip module.
  • the implementation principle and technical effect of the optical module 1 are the same as those of the optical module 1 in the above embodiments, and will not be repeated here.
  • the communication system adopts the optical module 1 as described above, which has better heat dissipation performance, improves the reliability of the optical module 1, and also improves the reliability of the optical communication system.
  • the present application also provides a chip module 2, which can be used in electronic devices such as routers and servers.
  • Figure 12 is a three-dimensional diagram of a chip module 2 provided in an embodiment of the present application. As shown in Figure 12, the chip module 2 at least includes: a circuit board 400, a chip 101 and a heat sink 600.
  • FIG14 is a schematic diagram of the structure of a chip module provided in an embodiment of the present application.
  • the chip 101 is disposed on a circuit board 400 and is electrically connected to the substrate 100 through the circuit board 400.
  • the circuit board 400 is electrically connected to the substrate 100 through a first electrical connector 401.
  • the chip 101 is electrically connected to the circuit board 400 through a second electrical connector 402.
  • the embodiment of the present application does not limit the structure of the first electrical connector 401 and the second electrical connector 402.
  • the first electrical connector 401 and the second electrical connector 402 may include a plurality of uniformly arranged solder balls.
  • the heat sink 600 is disposed on the side of the chip 101 away from the circuit board 400.
  • a thermal interface material 103 is disposed between the chip 101 and the circuit board 400.
  • the thermal interface material 103 may be a flexible thermally conductive material.
  • the thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or a thermally conductive sheet.
  • an embodiment of the present application provides an improved chip module 2.
  • the chip module 2 further includes a temperature balancing plate 500.
  • the temperature balancing plate 500 can be disposed between the chip 101 and the heat sink 600 to evenly disperse the heat generated by the chip 101 and reduce the power density of the chip 101. The heat is then transferred to the heat sink 600 through the temperature balancing plate 500 and dissipated through the heat sink 600.
  • the material of the temperature spreader 500 may be diamond or diamond copper alloy, diamond silver alloy, diamond aluminum alloy, etc. Therefore, the material of the temperature spreader includes diamond, whose thermal expansion coefficient is close to that of the chip, so as to avoid chip warping during welding or use, and the thermal conductivity of diamond is high, so as to better dissipate heat.
  • the embodiment of the present application does not limit the scope of the temperature balancing plate 500.
  • the temperature balancing plate 500 can be only arranged at a position opposite to the heat sink and the chip 101 to connect the chip 101 and the heat sink, and transfer the heat generated by the substrate 100 or the chip 101 to the heat sink, and then the heat sink transfers the heat to the external environment.
  • the temperature-regulating plate 500 can be processed into a shape that is the same as or similar to that of the chip 101 .
  • the lower surface area of the temperature equalizer 500 can be greater than or equal to the upper surface area of the chip 101, so that the temperature equalizer 500 and the upper surface of the chip 101 can be completely fitted together, thereby increasing the contact area between the temperature equalizer 500 and the chip 101 and improving the thermal conductivity of the temperature equalizer 500 to ensure that the heat of the chip 101 can be fully transferred through the temperature equalizer 500.
  • a high thermal conductivity temperature balancing sheet 500 is welded on the surface of the chip 101 to reduce the power density of the chip 101 .
  • the temperature difference generated by the thermal interface material 103 is reduced, thereby reducing the junction temperature of the chip 101 .
  • the chip module 2 includes a temperature spreader 500 , which is disposed on a surface of the heat sink 600 close to the chip 101 , and the thermal interface material 103 is located between the temperature spreader 500 and the chip 101 .
  • the optical module 1 includes a temperature-balancer 500 , which is disposed on the surface of the chip 101 close to the heat sink 600 , and the thermal interface material 103 is located between the temperature-balancer 500 and the heat sink 600 .
  • the chip module 2 includes two temperature spreaders 500: a first temperature spreader 500 and a second temperature spreader 700.
  • the first temperature spreader 500 is disposed on a surface of the heat sink 600 close to the chip 101
  • the second temperature spreader 700 is disposed on a surface of the chip 101 close to the heat sink 600.
  • the thermal interface material 103 is located between the first temperature spreader 500 and the second temperature spreader 700.
  • the temperature-regulating plate 500 is connected to the heat sink 600 by welding with the solder 104.
  • a metal film may be plated on the surface of the heat sink 600 in contact with the solder 104, that is, the welding surface of the heat sink 600, and on the surface of the temperature-regulating plate 500 in contact with the solder 104, that is, the welding surface of the heat sink 600.
  • the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.
  • the temperature spreader 500 is connected to the chip 101 by welding with the solder 104.
  • a metal film may be plated on the surface of the chip 101 in contact with the solder 104, that is, the welding surface of the chip 101, and on the surface of the temperature spreader 500 in contact with the solder 104, that is, the welding surface of the temperature spreader 500.
  • the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.
  • the first temperature spreader 500 is connected to the heat sink 600 by welding through the first layer of solder 104
  • the second temperature spreader 700 is connected to the chip 101 by welding through the second layer of solder 106.
  • a first metal film 1071 may be plated on the surface where the second temperature spreader 700 is connected to the second layer of solder 106, that is, the welding surface of the second temperature spreader 700
  • a second metal film 1072 may be plated on the surface where the chip 101 is connected to the second layer of solder 106, that is, the welding surface of the chip 101
  • a third metal film 1051 may be plated on the surface where the heat sink 600 is connected to the first layer of solder 104, that is, the welding surface of the heat sink 600
  • a fourth metal film 1052 may be plated on the surface where the first temperature spreader 500 is connected to the first layer of solder 104, that is, the welding surface of the first temperature spreader 500.
  • metal film The materials include: titanium Ti, nickel Ni, and gold Au.
  • the radiator 600 includes: a copper or aluminum radiator, a vapor chamber (VC), an evaporator, and a liquid cooling radiator (including a cold plate).
  • the radiator 600 also includes heat dissipation teeth. Therefore, the radiator 600 uses heat dissipation teeth to increase the heat dissipation surface of the radiator 600 and improve the heat dissipation performance.
  • the outer shell material of the heat sink 600 is copper or aluminum, and the interior is filled with liquid working fluid.
  • the cold plate is a liquid cooling component.
  • the liquid working medium in the cold plate can take away the heat.
  • the evaporator is a phase-change heat dissipation structural component.
  • the internal liquid working fluid undergoes phase change and absorbs heat, taking away the heat.
  • FIG 17 is a schematic diagram of the structure of a radiator provided by an embodiment of the present application.
  • the radiator 600 includes: a shell 601, the shell 601 is surrounded by a sealed vacuum cavity, wherein the cavity is filled with a working medium 602, the working medium 602 includes: a coolant, and a capillary structure is provided on the inner wall of the cavity.
  • the coolant can be a refrigerant such as Freon or water.
  • the capillary structure is, for example, a copper mesh micro-evaporator.
  • the bottom of the radiator contacts with the heat source 1001 for heating, and the heat source 1001 may include the chip module 2 as described above.
  • the heat source heats the copper mesh micro-evaporator, and the coolant at the bottom of the vacuum chamber is heated and quickly evaporates into hot air in the vacuum ultra-low pressure environment.
  • the inside of the radiator adopts a vacuum design, so that the hot air circulates more quickly in the copper mesh micro-environment. Then the hot air rises due to the heat, dissipates heat after encountering the cold source on the upper part of the radiator, and condenses into liquid again.
  • the condensed coolant flows back to the evaporation source at the bottom of the radiator through the copper micro-structure capillary channel.
  • the refluxed coolant is heated by the evaporator and vaporizes again and passes through the copper mesh micro-tube, and the action is repeated.

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Disclosed in embodiments of the present application are a chip module and a preparation method therefor, an optical module, a communication system, and an electronic device. The chip module comprises a circuit board and a chip provided on the circuit board; a heat dissipation structure is provided on the side of chip away from the circuit board; a thermal interface material is provided between the chip and the heat dissipation structure; and a heat spreader is provided between the chip and the thermal interface material and/or between the thermal interface material and the heat dissipation structure. The thermal expansion coefficient of the heat spreader matches the thermal expansion coefficient of the chip, and the thermal conductivity coefficient of the heat spreader is greater than the thermal conductivity coefficient of the thermal interface material. Therefore, by providing the heat spreader having a high thermal conductivity coefficient on the surface of the chip, the heat spreading performance is better, so that heat can be better spread and the power density of the chip is reduced, thereby reducing the temperature difference between the chip and the thermal interface material and improving the heat dissipation performance of the chip. In addition, the thermal expansion coefficient of the heat spreader is close to the thermal expansion coefficient of the chip, thereby reducing the thermal stress and preventing the separation and cracking of soldering surfaces.

Description

芯片模组及其制备方法、光模块、通信系统和电子设备Chip module and preparation method thereof, optical module, communication system and electronic device

本申请要求于2023年02月28日提交国家知识产权局、申请号为202310230206.2、申请名称为“芯片模组及其制备方法、光模块、通信系统和电子设备”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims priority to the Chinese patent application filed with the State Intellectual Property Office on February 28, 2023, with application number 202310230206.2 and application name “Chip module and preparation method thereof, optical module, communication system and electronic device”, all contents of which are incorporated by reference in this application.

技术领域Technical Field

本申请实施例涉及电子技术领域,尤其涉及一种芯片模组及其制备方法、光模块、通信系统和电子设备。The embodiments of the present application relate to the field of electronic technology, and in particular to a chip module and a method for preparing the same, an optical module, a communication system, and an electronic device.

背景技术Background Art

目前,随着电子设备的功耗的增大,芯片运行时会产生大量的热,如果不将热量有效散出保证芯片在安全温度下运行,芯片寿命会急剧衰减,严重时还会烧毁,因此,散热技术已经是支撑电子技术进一步发展的关键技术。At present, with the increase in power consumption of electronic devices, a large amount of heat will be generated when the chip is running. If the heat is not effectively dissipated to ensure that the chip runs at a safe temperature, the chip life will be sharply reduced, and in severe cases it will even burn out. Therefore, heat dissipation technology has become a key technology to support the further development of electronic technology.

当前芯片散热方式为在芯片表面设置热界面材料后和导体直接接触散热。The current chip heat dissipation method is to set a thermal interface material on the chip surface and then directly contact the conductor to dissipate heat.

如图1所示,光模块包括:上壳200、底板300、基板100以及设置在所述基板100上的芯片101,所述上壳200和所述底板300围成容纳所述基板100和所述芯片101的空间,其中,所述上壳200的下表面设有至少一个用于与芯片101的上表面相互接触的第二凸块2012,工作时,芯片101上产生的热量可以通过所述第二凸块2012向上壳200传递以进行散热。As shown in FIG1 , the optical module includes: an upper shell 200, a bottom plate 300, a substrate 100, and a chip 101 arranged on the substrate 100, wherein the upper shell 200 and the bottom plate 300 enclose a space for accommodating the substrate 100 and the chip 101, wherein the lower surface of the upper shell 200 is provided with at least one second bump 2012 for contacting the upper surface of the chip 101, and when working, the heat generated on the chip 101 can be transferred to the upper shell 200 through the second bump 2012 for heat dissipation.

其中,图13中的芯片模组2可以用于路由器、服务器等电子设备中。如图13所示,芯片模组2包括:芯片101、散热器600、电路板400和基板100,芯片101设置在电路板400上,散热器600固定在芯片101上,芯片101通过热界面材料103和散热器600接触散热。The chip module 2 in FIG13 can be used in electronic devices such as routers and servers. As shown in FIG13 , the chip module 2 includes: a chip 101, a heat sink 600, a circuit board 400 and a substrate 100, wherein the chip 101 is arranged on the circuit board 400, the heat sink 600 is fixed on the chip 101, and the chip 101 is in contact with the heat sink 600 through the thermal interface material 103 for heat dissipation.

然而,芯片功率密度越大,热界面材料热阻产生的温差越大,散热效果越差。However, the greater the chip power density, the greater the temperature difference caused by the thermal resistance of the thermal interface material, and the worse the heat dissipation effect.

发明内容Summary of the invention

本申请实施例提供一种芯片模组及其制备方法、光模块、通信系统和电子设备,以改善芯片的散热性能。The embodiments of the present application provide a chip module and a preparation method thereof, an optical module, a communication system and an electronic device to improve the heat dissipation performance of a chip.

为达到上述目的,本申请实施例采用如下技术方案:In order to achieve the above-mentioned purpose, the embodiment of the present application adopts the following technical solution:

本申请实施例的第一方面,提供一种芯片模组,包括:电路板,以及设置在该电路板上的芯片;该芯片远离该电路板的一侧设有散热结构;该芯片和该散热结构之间设有热界面材料;该芯片和该热界面材料之间,和/或该热界面材料和该散热结构之间设有均温片;其中,该均温片的热膨胀系数和该芯片的热膨胀系数相匹配,该均温片的导热系数大于该热界面材料的导热系数。由此,在芯片表面设置高导热系数的均温片,均温性能更好,可以更好的将热量分散开,降低了芯片功率密度,以减小芯片和热界面材料之间的温差,从而降低芯片工作温度,也即芯片结温,提高芯片散热性能。并且,均温片和芯片热膨胀系数接近,可以减小芯片和均温片之间的热应力,避免焊接面产生分离、开裂。The first aspect of the embodiment of the present application provides a chip module, including: a circuit board, and a chip arranged on the circuit board; a heat dissipation structure is arranged on the side of the chip away from the circuit board; a thermal interface material is arranged between the chip and the heat dissipation structure; a temperature balancing plate is arranged between the chip and the thermal interface material, and/or between the thermal interface material and the heat dissipation structure; wherein the thermal expansion coefficient of the temperature balancing plate matches the thermal expansion coefficient of the chip, and the thermal conductivity of the temperature balancing plate is greater than the thermal conductivity of the thermal interface material. Therefore, a temperature balancing plate with a high thermal conductivity is arranged on the surface of the chip, and the temperature balancing performance is better, and the heat can be better dispersed, thereby reducing the chip power density, so as to reduce the temperature difference between the chip and the thermal interface material, thereby reducing the chip operating temperature, that is, the chip junction temperature, and improving the chip heat dissipation performance. In addition, the thermal expansion coefficients of the temperature balancing plate and the chip are close, which can reduce the thermal stress between the chip and the temperature balancing plate and avoid separation and cracking of the welding surface.

一种可选的实现方式中,该均温片的尺寸大于或等于该芯片的尺寸。由此,可使得均温片和芯片的表面完全贴合,增大了均温片和芯片的接触面积,同时,均温片的尺寸更大,提高了均温片的导热性能,以保证芯片的热量通过均温片能充分传递出去。In an optional implementation, the size of the temperature spreader is greater than or equal to the size of the chip. As a result, the surface of the temperature spreader and the chip can be completely fitted together, increasing the contact area between the temperature spreader and the chip. At the same time, the size of the temperature spreader is larger, which improves the thermal conductivity of the temperature spreader to ensure that the heat of the chip can be fully transferred through the temperature spreader.

一种可选的实现方式中,该均温片包括:第一均温片,该芯片与该热界面材料之间设有该第一均温片,该第一均温片与该芯片焊接连接,该芯片的焊接面和该第一均温片的焊接面上镀有金属膜。由此,在焊接面设置金属膜,可以提高芯片和第一均温片的焊接性能,使得芯片和第一均温片可以更好的通过焊料焊接连接。In an optional implementation, the temperature spreader includes: a first temperature spreader, the first temperature spreader is arranged between the chip and the thermal interface material, the first temperature spreader is connected to the chip by welding, and the welding surface of the chip and the welding surface of the first temperature spreader are plated with a metal film. Thus, by arranging the metal film on the welding surface, the welding performance of the chip and the first temperature spreader can be improved, so that the chip and the first temperature spreader can be better connected by solder welding.

一种可选的实现方式中,所述第一均温片包括第一部分和第二部分,所述第一部分靠近所述芯片设置,所述第二部分靠近所述热界面材料设置,所述第一部分的尺寸与所述芯片的尺寸相同,所述第二部分的尺寸大于所述第一部分的尺寸。由此,提高了第一均温片和芯片的连接稳定性,且增大了散热面积。In an optional implementation, the first temperature spreader includes a first part and a second part, the first part is arranged close to the chip, the second part is arranged close to the thermal interface material, the size of the first part is the same as the size of the chip, and the size of the second part is larger than the size of the first part. Thus, the connection stability between the first temperature spreader and the chip is improved, and the heat dissipation area is increased.

一种可选的实现方式中,该均温片包括:第二均温片,该热界面材料和该散热结构之间设有该第二均温片,该散热结构和该第二均温片焊接连接,该散热器的焊接面和该第二均温片的焊接 面上镀有金属膜。由此,在散热器的焊接面和该第二均温片的焊接面设置金属膜,可以提高散热结构和第二均温片的焊接性能,使得散热结构和第二均温片可以更好的通过焊料焊接连接。In an optional implementation, the temperature balancing plate includes: a second temperature balancing plate, the second temperature balancing plate is arranged between the thermal interface material and the heat dissipation structure, the heat dissipation structure and the second temperature balancing plate are welded and connected, and the welding surface of the heat sink and the welding surface of the second temperature balancing plate are welded. Thus, by providing the metal film on the welding surface of the heat sink and the welding surface of the second temperature balancing plate, the welding performance of the heat dissipation structure and the second temperature balancing plate can be improved, so that the heat dissipation structure and the second temperature balancing plate can be better connected by soldering.

一种可选的实现方式中,该均温片采用金刚石或含有金刚石的合金材料。由此,均温片的材料包括金刚石,其热膨胀系数与芯片的热膨胀系数相接近,避免芯片焊接或者使用过程中发生翘曲,且金刚石的导热系数高,可以更好的散热。In an optional implementation, the temperature-regulating plate is made of diamond or an alloy material containing diamond. Therefore, the material of the temperature-regulating plate includes diamond, whose thermal expansion coefficient is close to that of the chip, so as to avoid chip warping during welding or use, and diamond has a high thermal conductivity, which can better dissipate heat.

一种可选的实现方式中,该热界面材料包括:导热凝胶、导热硅脂或导热片。由此,该热界面材料采用导热凝胶等柔性导热材料,可以利用柔性热界面材料的流动性充分填相邻结构之间的空隙,使得两个通过热界面材料连接的相邻结构充分接触,从而可以将芯片产生的热量及时通过柔性热界面材料传送到散热结构并散发出去,从而增强光模块的散热性能,提高了光模块的可靠性。In an optional implementation, the thermal interface material includes: thermally conductive gel, thermally conductive silicone grease or thermally conductive sheet. Thus, the thermal interface material uses a flexible thermally conductive material such as thermally conductive gel, and the fluidity of the flexible thermal interface material can be used to fully fill the gap between adjacent structures, so that two adjacent structures connected by the thermal interface material are in full contact, so that the heat generated by the chip can be timely transferred to the heat dissipation structure through the flexible thermal interface material and dissipated, thereby enhancing the heat dissipation performance of the optical module and improving the reliability of the optical module.

一种可选的实现方式中,该电路板上设有限位件,所述限位件距离所述电路板的高度高于所述芯片距离所述电路板的高度。由此,该限位件可以支撑芯片上方的器件,避免在焊接时将芯片上方的焊料挤压出去,从而更好的控制焊接后焊料的厚度。In an optional implementation, a stopper is provided on the circuit board, and the height of the stopper from the circuit board is higher than the height of the chip from the circuit board. Thus, the stopper can support the device above the chip to prevent the solder above the chip from being squeezed out during welding, thereby better controlling the thickness of the solder after welding.

一种可选的实现方式中,该散热结构包括:冷板、均温板、蒸发散热器。由此,进一步提高了芯片模组的散热性能。In an optional implementation, the heat dissipation structure includes: a cold plate, a temperature equalizing plate, and an evaporative heat sink, thereby further improving the heat dissipation performance of the chip module.

本申请实施例的第二方面,提供一种光模块,包括:壳体,以及如上所述的芯片模组,该散热结构为该壳体的一部分,或,该散热结构设置在该壳体外侧。由此,该光模块采用上述芯片模组,散热性能更好。The second aspect of the embodiment of the present application provides an optical module, comprising: a housing, and the chip module as described above, wherein the heat dissipation structure is a part of the housing, or the heat dissipation structure is arranged outside the housing. Thus, the optical module adopts the chip module as described above, and has better heat dissipation performance.

一种可选的实现方式中,该光模块还包括:基板和光器件,该光器件和该芯片模组设置在该基板上。由此,便于控制该光模块。In an optional implementation, the optical module further includes: a substrate and an optical device, and the optical device and the chip module are arranged on the substrate, thereby facilitating the control of the optical module.

一种可选的实现方式中,该壳体包括:上壳和底板,该上壳包括:顶板和支架,该支架与该底板连接,该基板与该底板连接。由此,将基板与底板连接,将芯片模组组装好之后,再将上壳扣合在底板上即可,便于芯片模组的组装。In an optional implementation, the housing includes: an upper shell and a bottom plate, the upper shell includes: a top plate and a bracket, the bracket is connected to the bottom plate, and the base plate is connected to the bottom plate. Thus, after the base plate is connected to the bottom plate and the chip module is assembled, the upper shell can be buckled onto the bottom plate, which facilitates the assembly of the chip module.

一种可选的实现方式中,该顶板上设有第一凸块和第二凸块,该第一凸块通过热界面材料与该光器件连接,该第二凸块与该芯片模组连接。由此,通过设置该第一凸块和第二凸块,使得壳体可以通过该第一凸块充分的和光器件接触,并使得壳体通过该第二凸块充分的和芯片模组接触,提高光模块的散热性能。In an optional implementation, the top plate is provided with a first bump and a second bump, the first bump is connected to the optical device through a thermal interface material, and the second bump is connected to the chip module. Thus, by providing the first bump and the second bump, the housing can be fully in contact with the optical device through the first bump, and the housing can be fully in contact with the chip module through the second bump, thereby improving the heat dissipation performance of the optical module.

本申请实施例的第三方面,提供一种通信系统,包括:数据源,光学信道,以及如上所述的光模块,该数据源用于向该光模块发送数据信号,该光模块用于将该数据信号转换为光信号,并通过该光学信道进行传输。由此,该通信系统采用上述光模块,散热性能更好。In a third aspect of the embodiments of the present application, a communication system is provided, comprising: a data source, an optical channel, and the optical module as described above, wherein the data source is used to send a data signal to the optical module, and the optical module is used to convert the data signal into an optical signal and transmit it through the optical channel. Thus, the communication system adopts the optical module, and has better heat dissipation performance.

本申请实施例的第四方面,提供一种电子设备,该电子设备包括:基板,以及如上所述的芯片模组,该芯片模组设置在该基板上。由此,该电子设备采用上述芯片模组,散热性能更好。According to a fourth aspect of the embodiments of the present application, an electronic device is provided, the electronic device comprising: a substrate, and the chip module as described above, the chip module being arranged on the substrate. Thus, the electronic device adopts the chip module as described above, and has better heat dissipation performance.

一种可选的实现方式中,该电子设备为路由器、服务器。由此,该芯片模组应用范围更广泛。In an optional implementation, the electronic device is a router or a server. Thus, the chip module has a wider application range.

本申请实施例的第五方面,提供一种芯片模组的制备方法,包括:将芯片焊接在电路板上;在芯片远离电路板的一侧层叠设置均温片和热界面材料;该均温片的热膨胀系数和该芯片的热膨胀系数相匹配,该均温片的导热系数大于该热界面材料的导热系数;在层叠设置的该均温片和该热界面材料远离芯片的一侧设置散热结构,其中,该芯片和该热界面材料之间,和/或该热界面材料和该散热结构之间设有该均温片。In a fifth aspect of an embodiment of the present application, a method for preparing a chip module is provided, comprising: soldering a chip on a circuit board; stacking a temperature spreader and a thermal interface material on a side of the chip away from the circuit board; the thermal expansion coefficient of the temperature spreader matches the thermal expansion coefficient of the chip, and the thermal conductivity of the temperature spreader is greater than the thermal conductivity of the thermal interface material; and arranging a heat dissipation structure on a side of the stacked temperature spreader and the thermal interface material away from the chip, wherein the temperature spreader is provided between the chip and the thermal interface material, and/or between the thermal interface material and the heat dissipation structure.

一种可选的实现方式中,该将芯片焊接在电路板上之前,该方法还包括:在该均温片的焊接面、该芯片的焊接面和/或该散热结构的焊接面上镀金属膜。In an optional implementation, before soldering the chip to the circuit board, the method further includes: coating a metal film on the soldering surface of the temperature spreader, the soldering surface of the chip and/or the soldering surface of the heat dissipation structure.

一种可选的实现方式中,该在芯片远离电路板的一侧设置均温片和热界面材料之前,该方法还包括:在该电路板或所述芯片的表面设置限位件,其中,所述限位件距离所述电路板的高度高于所述芯片距离所述电路板的高度。In an optional implementation, before setting the temperature equalizer and thermal interface material on the side of the chip away from the circuit board, the method also includes: setting a limiter on the surface of the circuit board or the chip, wherein the height of the limiter from the circuit board is higher than the height of the chip from the circuit board.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为现有技术提供的光模块的结构示意图;FIG1 is a schematic diagram of the structure of an optical module provided by the prior art;

图2为本申请实施例提供的一种光模块的结构示意图;FIG2 is a schematic diagram of the structure of an optical module provided in an embodiment of the present application;

图3为本申请实施例提供的另一种光模块的结构示意图; FIG3 is a schematic diagram of the structure of another optical module provided in an embodiment of the present application;

图4为本申请实施例提供的另一种光模块的结构示意图;FIG4 is a schematic diagram of the structure of another optical module provided in an embodiment of the present application;

图5为本申请实施例提供的一种芯片模组的制备方法流程图;FIG5 is a flow chart of a method for preparing a chip module provided in an embodiment of the present application;

图6、图7、图8、图9分别为执行图5中步骤后得到的产品结构示意图;Figures 6, 7, 8 and 9 are schematic diagrams of product structures obtained after executing the steps in Figure 5;

图10为本申请实施例提供的另一种芯片模组的制备方法流程图;FIG10 is a flow chart of another method for preparing a chip module provided in an embodiment of the present application;

图11为本申请实施例提供的另一种芯片模组的制备方法流程图;FIG11 is a flow chart of another method for preparing a chip module provided in an embodiment of the present application;

图12为本申请实施例提供的一种芯片模组的立体图;FIG12 is a three-dimensional diagram of a chip module provided in an embodiment of the present application;

图13为现有技术提供的一种芯片模组的结构示意图;FIG13 is a schematic diagram of the structure of a chip module provided by the prior art;

图14为本申请实施例提供的一种芯片模组的结构示意图;FIG14 is a schematic diagram of the structure of a chip module provided in an embodiment of the present application;

图15为本申请实施例提供的另一种芯片模组的结构示意图;FIG15 is a schematic diagram of the structure of another chip module provided in an embodiment of the present application;

图16为本申请实施例提供的另一种芯片模组的结构示意图;FIG16 is a schematic diagram of the structure of another chip module provided in an embodiment of the present application;

图17为本申请实施例提供的一种芯片模组的结构示意图。FIG. 17 is a schematic diagram of the structure of a chip module provided in an embodiment of the present application.

具体实施方式DETAILED DESCRIPTION

为了使本申请的目的、技术方案和优点更加清楚,下面将结合附图对本申请作进一步地详细描述。In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

以下,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中,除非另有说明,“多个”的含义是两个或两个以上。In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise specified, "plurality" means two or more.

此外,本申请中,“上”、“下”等方位术语是相对于附图中的部件示意置放的方位来定义的,应当理解到,这些方向性术语是相对的概念,它们用于相对于的描述和澄清,其可以根据附图中部件所放置的方位的变化而相应地发生变化。In addition, in the present application, directional terms such as "upper" and "lower" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the changes in the orientation of the components in the drawings.

本申请实施例提供一种通信系统,包括:包括:数据源,光学信道,以及光模块,该数据源用于向该光模块发送数据信号,该光模块用于将该数据信号转换为光信号,并通过该光学信道进行传输。An embodiment of the present application provides a communication system, including: a data source, an optical channel, and an optical module, wherein the data source is used to send a data signal to the optical module, and the optical module is used to convert the data signal into an optical signal and transmit it through the optical channel.

下面结合附图对本申请实施例提供的光模块进行说明。图2为本申请实施例提供的第一种光模块的结构示意图。如图2所示,该光模块1包括:壳体、基板100,其中,该基板100上设有1个或1个以上芯片101、光器件102,该基板100、该芯片101和光器件102均位于该壳体内。The optical module provided in the embodiment of the present application is described below in conjunction with the accompanying drawings. Figure 2 is a schematic diagram of the structure of the first optical module provided in the embodiment of the present application. As shown in Figure 2, the optical module 1 includes: a housing, a substrate 100, wherein one or more chips 101 and an optical device 102 are provided on the substrate 100, and the substrate 100, the chip 101 and the optical device 102 are all located in the housing.

本申请实施例对该壳体的结构和材质不做限制。在本申请一种实现方式中,该壳体包括:上壳200和底板300,该上壳200和该底板300扣合在一起,该基板100位于该上壳200和该底板300围设的区域内。The embodiment of the present application does not limit the structure and material of the housing. In one implementation of the present application, the housing includes: an upper housing 200 and a bottom plate 300, the upper housing 200 and the bottom plate 300 are buckled together, and the substrate 100 is located in the area enclosed by the upper housing 200 and the bottom plate 300.

在本申请的一些实施例中,该上壳200例如由顶板201和支架202组成,该支架202支撑在该底板300上,该支架202环绕该芯片101设置。In some embodiments of the present application, the upper shell 200 is composed of, for example, a top plate 201 and a bracket 202 . The bracket 202 is supported on the bottom plate 300 , and the bracket 202 is disposed around the chip 101 .

本申请实施例对该支架202和该顶板201的成型方式不做限制,在本申请一种实现方式中,该支架202可以采用和该顶板201相同的材质,加工时,该支架202可以与该顶板201一体压铸成型,该支架202远离该顶板201的一端可以通过导热粘胶与该底板300固定连接。The embodiment of the present application does not limit the molding method of the bracket 202 and the top plate 201. In one implementation of the present application, the bracket 202 can be made of the same material as the top plate 201. During processing, the bracket 202 can be die-cast as a whole with the top plate 201, and the end of the bracket 202 away from the top plate 201 can be fixedly connected to the bottom plate 300 by a thermally conductive adhesive.

在本申请其他实现方式中,该支架202和该顶板201可以分别压铸成型,该支架202例如包括相对的第一端和第二端,该支架202的第一端例如可以通过导热粘胶与该顶板201固定连接,该支架202的第二端可以通过导热粘胶与该底板300固定连接。In other implementations of the present application, the bracket 202 and the top plate 201 can be die-cast separately, and the bracket 202, for example, includes a first end and a second end relative to each other. The first end of the bracket 202 can be fixedly connected to the top plate 201 by, for example, a thermally conductive adhesive, and the second end of the bracket 202 can be fixedly connected to the bottom plate 300 by, for example, a thermally conductive adhesive.

本申请实施例对该支架202的具体结构不做限制,在本申请一种实现方式中,该支架202可以采用环形结构,该支架202例如均匀的支撑在电路板的边缘位置。The embodiment of the present application does not limit the specific structure of the bracket 202. In one implementation of the present application, the bracket 202 can adopt an annular structure, and the bracket 202 is evenly supported at the edge of the circuit board, for example.

由此,该支架202可以在该底板300上支撑起该顶板201,将该顶板201的重力均匀的分散在底板300上。Thus, the bracket 202 can support the top plate 201 on the bottom plate 300 and evenly distribute the gravity of the top plate 201 on the bottom plate 300 .

本申请实施例对上壳200与底板300的连接方式不做限制。在本申请的一些实施例中,该上壳200和该底板300通过螺栓固定连接。The embodiment of the present application does not limit the connection method between the upper shell 200 and the bottom plate 300. In some embodiments of the present application, the upper shell 200 and the bottom plate 300 are fixedly connected by bolts.

其中,基板100包括相对的第一表面和第二表面,基板100的第一表面与底板300连接,基板100的第二表面背离底板300。在本申请的一些实施例中,基板100的第一表面通过连接件与底板300连接。The substrate 100 includes a first surface and a second surface opposite to each other, the first surface of the substrate 100 is connected to the bottom plate 300, and the second surface of the substrate 100 is away from the bottom plate 300. In some embodiments of the present application, the first surface of the substrate 100 is connected to the bottom plate 300 via a connector.

基板100的第二表面上设有1个或1个以上芯片101、光器件102。 One or more chips 101 and optical devices 102 are disposed on the second surface of the substrate 100 .

其中,光器件102包括相对的一表面和第二表面,光器件102的第一表面和基板100的第二表面连接,光器件102的第二表面通过热界面材料103和顶板201连接。The optical device 102 includes a first surface and a second surface opposite to each other. The first surface of the optical device 102 is connected to the second surface of the substrate 100 , and the second surface of the optical device 102 is connected to the top plate 201 via the thermal interface material 103 .

在本申请的一些实施例中,顶板201靠近光器件的一侧设有第一凸块2011,该第一凸块2011与该光器件102相对,且该第一凸块2011形状与该光器件102形状相匹配,该光器件102通过热界面材料(Thermal Interface Material,TIM)103和第一凸块2011连接。由此,通过设置该第一凸块2011,使得壳体可以通过该第一凸块2011充分的和光器件102接触,提高光模块的散热性能。In some embodiments of the present application, a first bump 2011 is provided on one side of the top plate 201 close to the optical device, the first bump 2011 is opposite to the optical device 102, and the shape of the first bump 2011 matches the shape of the optical device 102, and the optical device 102 is connected to the first bump 2011 through a thermal interface material (TIM) 103. Therefore, by providing the first bump 2011, the housing can be fully in contact with the optical device 102 through the first bump 2011, thereby improving the heat dissipation performance of the optical module.

其中,该热界面材料103可以是柔性导热材料。该热界面材料103包括:导热凝胶.导热硅脂或导热片。The thermal interface material 103 may be a flexible thermally conductive material. The thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or thermally conductive sheet.

在本申请的一些实施例中,芯片101设置在电路板400上,并通过电路板400与基板100电连接。在本申请的一些实施例中,电路板400通过第一电连接件401和基板100电连接。在本申请的一些实施例中,芯片101通过第二电连接件402和电路板400电连接。In some embodiments of the present application, the chip 101 is disposed on the circuit board 400 and is electrically connected to the substrate 100 through the circuit board 400. In some embodiments of the present application, the circuit board 400 is electrically connected to the substrate 100 through the first electrical connector 401. In some embodiments of the present application, the chip 101 is electrically connected to the circuit board 400 through the second electrical connector 402.

本申请实施例对第一电连接件401和第二电连接件402的结构不做限制。示例的,第一电连接件401和第二电连接件402可以包括多个均匀排布的焊球。The embodiment of the present application does not limit the structures of the first electrical connector 401 and the second electrical connector 402. For example, the first electrical connector 401 and the second electrical connector 402 may include a plurality of uniformly arranged solder balls.

在本申请的一些实施例中,顶板201靠近芯片101的一侧设有第二凸块2012,第二凸块2012例如与芯片101相对,且第二凸块2012形状与芯片101形状相匹配,该芯片101可以通过热界面材料103和第二凸块2012连接。由此,通过设置该第二凸块2012,使得壳体可以通过该第二凸块2012充分的和芯片模组101接触,提高光模块的散热性能。In some embodiments of the present application, a second bump 2012 is provided on one side of the top plate 201 close to the chip 101, the second bump 2012 is, for example, opposite to the chip 101, and the shape of the second bump 2012 matches the shape of the chip 101, and the chip 101 can be connected through the thermal interface material 103 and the second bump 2012. Thus, by providing the second bump 2012, the housing can be fully in contact with the chip module 101 through the second bump 2012, thereby improving the heat dissipation performance of the optical module.

在本申请的一些实施例中,该热界面材料103可以是柔性导热材料。该热界面材料103包括:导热凝胶、导热硅脂或导热片。In some embodiments of the present application, the thermal interface material 103 may be a flexible thermally conductive material. The thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or a thermally conductive sheet.

然而,随着芯片功率密度增大,热界面材料热阻产生的温差越大,散热效果越差。However, as the chip power density increases, the temperature difference caused by the thermal resistance of the thermal interface material becomes larger and the heat dissipation effect becomes worse.

为此,本申请实施例提供一种改进的光模块1。To this end, an embodiment of the present application provides an improved optical module 1.

接着参考图2,该光模块1还包括:均温片500。可以将均温片500和热界面材料103设置在芯片101和第二凸块2012之间,以将芯片101产生的热量均匀分散,降低芯片101的功率密度。2 , the optical module 1 further includes a temperature-distributing plate 500 . The temperature-distributing plate 500 and the thermal interface material 103 may be disposed between the chip 101 and the second bump 2012 to evenly disperse the heat generated by the chip 101 and reduce the power density of the chip 101 .

在本申请的一些实施例中,该均温片的热膨胀系数和该芯片的热膨胀系数相匹配。其中,均温片的热膨胀系数和该芯片的热膨胀系数相匹配,指的是均温片的热膨胀系数和该芯片的热膨胀系数相接近,在一些实施例中,均温片的热膨胀系数和该芯片的热膨胀系数可以相差3m/K-7m/K。由此,均温片和芯片热膨胀系数接近,可以减小芯片和均温片之间的热应力,避免焊接面产生分离、开裂。In some embodiments of the present application, the thermal expansion coefficient of the temperature-regulating plate matches the thermal expansion coefficient of the chip. The thermal expansion coefficient of the temperature-regulating plate matches the thermal expansion coefficient of the chip, which means that the thermal expansion coefficient of the temperature-regulating plate is close to the thermal expansion coefficient of the chip. In some embodiments, the thermal expansion coefficient of the temperature-regulating plate and the thermal expansion coefficient of the chip may differ by 3m/K-7m/K. Therefore, the thermal expansion coefficients of the temperature-regulating plate and the chip are close, which can reduce the thermal stress between the chip and the temperature-regulating plate and avoid separation and cracking of the welding surface.

该均温片500的导热系数大于该热界面103材料的导热系数。其在,导热系数,又称“热导率”,是物质导热能力的量度,是指当温度垂直向下梯度为1℃/m时,单位时间内通过单位水平截面积所传递的热量。The thermal conductivity of the temperature plate 500 is greater than the thermal conductivity of the material of the thermal interface 103. Thermal conductivity, also known as "thermal conductivity", is a measure of the thermal conductivity of a material, and refers to the amount of heat transferred through a unit horizontal cross-sectional area per unit time when the vertical downward temperature gradient is 1°C/m.

由此,均温片的导热系数更高,均温性能更好,可以更好的将热量分散开,以减小芯片和热界面材料之间的温差,提高芯片散热性能。As a result, the thermal conductivity of the temperature spreader is higher and the temperature uniformity performance is better, which can better disperse the heat to reduce the temperature difference between the chip and the thermal interface material and improve the chip's heat dissipation performance.

在本申请的一些实施例中,均温片500的材质包括金刚石或金刚石铜合金、金刚石银合金、金刚石铝合金等含金刚石的合金材料。由此,均温片的材料包括金刚石,其热膨胀系数与芯片的热膨胀系数相接近,避免芯片焊接或者使用过程中发生翘曲,且金刚石的导热系数高,可以更好的散热。In some embodiments of the present application, the material of the temperature spreader 500 includes diamond or diamond copper alloy, diamond silver alloy, diamond aluminum alloy, etc. Therefore, the material of the temperature spreader includes diamond, whose thermal expansion coefficient is close to that of the chip, so as to avoid chip warping during welding or use, and the thermal conductivity of diamond is high, so as to better dissipate heat.

本申请实施例对该均温片500的范围不做限制。在本申请一种实现方式中,如图3所示,该均温片500可以仅设置在该上壳200与该芯片101相对的位置,以连接该芯片101和该上壳200,并将该基板100或该芯片101产生的热量传递至该上壳200,再由该上壳200将该热量传递至外部环境。The embodiment of the present application does not limit the scope of the temperature balancing plate 500. In one implementation of the present application, as shown in FIG3 , the temperature balancing plate 500 can be only arranged at a position where the upper shell 200 is opposite to the chip 101, so as to connect the chip 101 and the upper shell 200, and transfer the heat generated by the substrate 100 or the chip 101 to the upper shell 200, and then the upper shell 200 transfers the heat to the external environment.

其中,均温片500的数量和设置位置可以根据需要进行调整。在本申请的一些实施例中,如图2所示,光模块1包括1个均温片500,均温片500设置在顶板201靠近芯片101的表面上,热界面材料103位于均温片500和芯片101之间。The number and location of the temperature balancing plate 500 can be adjusted as needed. In some embodiments of the present application, as shown in FIG2 , the optical module 1 includes a temperature balancing plate 500 , which is disposed on the surface of the top plate 201 close to the chip 101 , and the thermal interface material 103 is located between the temperature balancing plate 500 and the chip 101 .

在本申请的一些实施例中,如图3所示,光模块1包括1个均温片500,均温片500设置在芯片101靠近顶板201的表面上,热界面材料103位于均温片500和第二凸块2012之间。 In some embodiments of the present application, as shown in FIG. 3 , the optical module 1 includes a temperature spreader 500 , which is disposed on a surface of the chip 101 close to the top plate 201 , and the thermal interface material 103 is located between the temperature spreader 500 and the second bump 2012 .

在此实施例的一些示例中,均温片500可以包括第一部分和第二部分,该第一部分靠近芯片101设置,该第二部分靠近该热界面材料103设置,该第一部分的尺寸与该芯片101的尺寸相同,该第二部分的尺寸大于该第一部分的尺寸。In some examples of this embodiment, the temperature balance plate 500 may include a first part and a second part, the first part is arranged close to the chip 101, the second part is arranged close to the thermal interface material 103, the size of the first part is the same as the size of the chip 101, and the size of the second part is larger than the size of the first part.

在本申请的一些实施例中,如图4所示,光模块1包括2个均温片500:第一均温片500和第二均温片700,第一均温片500设置在顶板201靠近芯片101的表面上,第二均温片700设置在芯片101靠近顶板201的表面上。热界面材料103位于第一均温片500和第二均温片700之间。In some embodiments of the present application, as shown in FIG4 , the optical module 1 includes two temperature spreaders 500: a first temperature spreader 500 and a second temperature spreader 700. The first temperature spreader 500 is disposed on a surface of the top plate 201 close to the chip 101, and the second temperature spreader 700 is disposed on a surface of the chip 101 close to the top plate 201. The thermal interface material 103 is located between the first temperature spreader 500 and the second temperature spreader 700.

其中,该均温片500可以加工成和该芯片101相同或相近的形状。The temperature-regulating plate 500 can be processed into a shape that is the same as or similar to that of the chip 101 .

在此实施例的一些示例中,第二均温片700可以包括第一部分和第二部分,该第一部分靠近芯片101设置,该第二部分靠近该热界面材料103设置,该第一部分的尺寸与该芯片101的尺寸相同,该第二部分的尺寸大于该第一部分的尺寸。In some examples of this embodiment, the second temperature stabilizer 700 may include a first part and a second part, the first part is arranged close to the chip 101, the second part is arranged close to the thermal interface material 103, the size of the first part is the same as the size of the chip 101, and the size of the second part is larger than the size of the first part.

在本申请的一些实施例中,该均温片500的尺寸大于或等于芯片101的尺寸,可使得该均温片500和该芯片101的上表面完全贴合,增大了均温片500和芯片101的接触面积,提高了均温片500的导热性能,以保证芯片101的热量通过均温片500能充分传递出去。In some embodiments of the present application, the size of the temperature equalizer 500 is greater than or equal to the size of the chip 101, so that the temperature equalizer 500 and the upper surface of the chip 101 can be completely fitted together, thereby increasing the contact area between the temperature equalizer 500 and the chip 101 and improving the thermal conductivity of the temperature equalizer 500 to ensure that the heat of the chip 101 can be fully transferred through the temperature equalizer 500.

由此,在芯片表面焊接高导热均温片500,降低芯片功率密度,功率密度低了之后,热界面材料产生的温差会降低,从而降低芯片工作温度,也即芯片结温。Therefore, a high thermal conductivity temperature spreader 500 is welded on the chip surface to reduce the chip power density. When the power density is low, the temperature difference generated by the thermal interface material will be reduced, thereby reducing the chip operating temperature, that is, the chip junction temperature.

此外,设置均温片与设置均温板等散热器相比,过热度降低,便于热传递。In addition, compared with installing a heat sink such as a temperature-averaging plate, installing a temperature-averaging sheet can reduce overheating and facilitate heat transfer.

过热度为均温板等相变或液冷散热结构件的热量从热源传递到散热结构件表面时,外壳表面和散热结构件内部工质的温差。The superheat is the temperature difference between the outer shell surface and the working fluid inside the heat dissipation structure when the heat of the phase change or liquid cooling heat dissipation structure such as the temperature equalizer is transferred from the heat source to the surface of the heat dissipation structure.

本申请实施例还提供一种光模块1的制备方法,如图5所示,芯片模组的制备方法包括以下步骤:The embodiment of the present application also provides a method for preparing an optical module 1. As shown in FIG5 , the method for preparing a chip module comprises the following steps:

S101.如图6所示,将芯片焊接在基板上。S101. As shown in FIG6 , solder the chip onto the substrate.

其中,加工该光模块1时,可以先将基板100固定在底板300上,接着将芯片101固定在基板100上。When processing the optical module 1 , the substrate 100 may be first fixed on the bottom plate 300 , and then the chip 101 may be fixed on the substrate 100 .

在本申请的一些实施例中,可以采用焊接的方式将基板100固定在底板300上。在本申请的一些实施例中,可以采用焊接的方式将芯片101固定在基板100上。例如,可以采用回流焊工艺将芯片101焊接到基板100上。In some embodiments of the present application, the substrate 100 may be fixed on the bottom plate 300 by welding. In some embodiments of the present application, the chip 101 may be fixed on the substrate 100 by welding. For example, the chip 101 may be welded to the substrate 100 by a reflow process.

在本申请的一些实施例中,芯片101设置在电路板400上,并通过电路板400与基板100电连接。在本申请的一些实施例中,电路板400通过第一电连接件401和基板100电连接。在本申请的一些实施例中,芯片101通过第二电连接件402和电路板400电连接。In some embodiments of the present application, the chip 101 is disposed on the circuit board 400 and is electrically connected to the substrate 100 through the circuit board 400. In some embodiments of the present application, the circuit board 400 is electrically connected to the substrate 100 through the first electrical connector 401. In some embodiments of the present application, the chip 101 is electrically connected to the circuit board 400 through the second electrical connector 402.

本申请实施例对第一电连接件401和第二电连接件402的结构不做限制。示例的,第一电连接件401和第二电连接件402可以包括多个均匀排布的焊球。The embodiment of the present application does not limit the structures of the first electrical connector 401 and the second electrical connector 402. For example, the first electrical connector 401 and the second electrical connector 402 may include a plurality of uniformly arranged solder balls.

在本申请的一些实施例中,光模块1还包括光器件102。在本申请的一些实施例中,可以采用焊接的方式将光器件102固定在基板100上。In some embodiments of the present application, the optical module 1 further includes an optical device 102. In some embodiments of the present application, the optical device 102 may be fixed on the substrate 100 by welding.

S102.如图7、图8、图9所示,在芯片远离电路板的一侧层叠设置均温片和热界面材料。S102. As shown in FIG. 7 , FIG. 8 , and FIG. 9 , a temperature balancing sheet and a thermal interface material are stacked on a side of the chip away from the circuit board.

其中,该壳体通过该均温片500与该芯片热导通。The shell is thermally connected to the chip through the temperature balancing plate 500 .

在本申请一些实施中,该顶板201和该芯片101例如分别包括相对的第一表面和第二表面,其中,该芯片101的第一表面靠近基板100,该芯片101的第二表面背离该基板100,该顶板201的第一表面朝向该芯片101的第二表面,该顶板201的第二表面背离该芯片101。该均温片500例如设置在该顶板201和芯片101之间。In some implementations of the present application, the top plate 201 and the chip 101, for example, respectively include a first surface and a second surface opposite to each other, wherein the first surface of the chip 101 is close to the substrate 100, the second surface of the chip 101 is away from the substrate 100, the first surface of the top plate 201 faces the second surface of the chip 101, and the second surface of the top plate 201 is away from the chip 101. The temperature spreader 500 is, for example, disposed between the top plate 201 and the chip 101.

其中,该芯片101和该热界面材料103之间,和/或该热界面材料103和该顶板201之间设有该均温片。The temperature balancing plate is disposed between the chip 101 and the thermal interface material 103 , and/or between the thermal interface material 103 and the top plate 201 .

该均温片500的热膨胀系数和该芯片101的热膨胀系数相匹配,该均温片500的导热系数大于该热界面材料103的导热系数。The thermal expansion coefficient of the temperature spreader 500 matches the thermal expansion coefficient of the chip 101 , and the thermal conductivity of the temperature spreader 500 is greater than the thermal conductivity of the thermal interface material 103 .

在本申请的一些实施例中,如图2所示,光模块1包括1个均温片500,均温片500设置在顶板201靠近芯片101的表面上,热界面材料103位于均温片500和芯片101之间。In some embodiments of the present application, as shown in FIG. 2 , the optical module 1 includes a temperature spreader 500 , which is disposed on a surface of the top plate 201 close to the chip 101 , and the thermal interface material 103 is located between the temperature spreader 500 and the chip 101 .

在本申请的一些实施例中,如图3所示,光模块1包括1个均温片500,均温片500设置在芯片101靠近顶板201的表面上,热界面材料103位于均温片500和第二凸块2012之间。 In some embodiments of the present application, as shown in FIG. 3 , the optical module 1 includes a temperature spreader 500 , which is disposed on a surface of the chip 101 close to the top plate 201 , and the thermal interface material 103 is located between the temperature spreader 500 and the second bump 2012 .

在本申请的一些实施例中,如图4所示,光模块1包括2个均温片500:第一均温片500和第二均温片700,第一均温片500设置在顶板201靠近芯片101的表面上,第二均温片700设置在芯片101靠近顶板201的表面上。热界面材料103位于第一均温片500和第二均温片700之间。In some embodiments of the present application, as shown in FIG4 , the optical module 1 includes two temperature spreaders 500: a first temperature spreader 500 and a second temperature spreader 700. The first temperature spreader 500 is disposed on a surface of the top plate 201 close to the chip 101, and the second temperature spreader 700 is disposed on a surface of the chip 101 close to the top plate 201. The thermal interface material 103 is located between the first temperature spreader 500 and the second temperature spreader 700.

在本申请一些实施例中,该热界面材料103可以是柔性导热材料。该热界面材料103包括:导热凝胶.导热硅脂或导热片。In some embodiments of the present application, the thermal interface material 103 may be a flexible thermally conductive material. The thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or thermally conductive sheet.

由此,可以利用柔性热界面材料103的流动性充分填充相邻结构之间的空隙,并且可以挤压相邻结构之间的空气,使得相邻结构充分接触,从而可以将芯片101产生的热量及时通过均温片500和柔性热界面材料103传送到壳体散发出去,从而增强光模块1的散热性能,提高了光模块1的可靠性。Therefore, the fluidity of the flexible thermal interface material 103 can be used to fully fill the gaps between adjacent structures, and the air between adjacent structures can be squeezed so that the adjacent structures are in full contact, so that the heat generated by the chip 101 can be timely transferred to the shell through the temperature equalizer 500 and the flexible thermal interface material 103 and dissipated, thereby enhancing the heat dissipation performance of the optical module 1 and improving the reliability of the optical module 1.

S103.如图2、图3、图4所示,在层叠设置的均温片和热界面材料远离芯片101的一侧设置散热结构。S103 . As shown in FIG. 2 , FIG. 3 , and FIG. 4 , a heat dissipation structure is provided on a side of the stacked temperature-balancing plate and the thermal interface material away from the chip 101 .

最后,可以将上壳200盖合在底板300上,使得上壳200上的第二凸块2012压合在热界面材料103上。Finally, the upper shell 200 can be covered on the bottom plate 300 , so that the second bumps 2012 on the upper shell 200 are pressed onto the thermal interface material 103 .

在本申请一些实施例中,上壳200可以作为散热结构将芯片101产生的热量传递至空气中。In some embodiments of the present application, the upper shell 200 can serve as a heat dissipation structure to transfer the heat generated by the chip 101 to the air.

在本申请另一些实施例中,将壳体的上壳200盖合在底板300上之后,还可以在上壳200与芯片101对应的一侧设置散热器。示例的,该散热器包括:铜或铝散热器、均温板(Vapor chamber,VC)、蒸发器和液冷散热器(包括冷板)。In other embodiments of the present application, after the upper shell 200 of the housing is covered on the bottom plate 300, a heat sink may be provided on the side of the upper shell 200 corresponding to the chip 101. For example, the heat sink includes: a copper or aluminum heat sink, a vapor chamber (VC), an evaporator, and a liquid cooling heat sink (including a cold plate).

散热器外壳材料为铜或铝,内部为液体工质。The radiator shell material is copper or aluminum, and the inside is liquid working medium.

其中,冷板为液冷部件,当冷板壳体与热源接触时,冷板内走液体工质可以带走热量。Among them, the cold plate is a liquid cooling component. When the cold plate shell contacts the heat source, the liquid working medium in the cold plate can take away the heat.

蒸发器为相变散热结构件,蒸发器壳体与热源接触时,内部液体工质受热发生相变吸热,带走热量。The evaporator is a phase-change heat dissipation structural component. When the evaporator shell comes into contact with the heat source, the internal liquid working fluid undergoes phase change and absorbs heat, taking away the heat.

其中,在本申请的一些实施例中,该散热器包括:密封的真空腔体,其中,该腔体内填充有冷却液,且该腔体的内壁上设有毛细结构。其中,该冷却液可以是氟利昂等冷媒或水。该毛细结构例如为铜网微状蒸发器。In some embodiments of the present application, the heat sink includes: a sealed vacuum cavity, wherein the cavity is filled with a coolant, and a capillary structure is provided on the inner wall of the cavity. The coolant may be a refrigerant such as Freon or water. The capillary structure is, for example, a copper mesh micro-evaporator.

使用散热器时,散热器底部与芯片101接触受热,热源加热铜网微状蒸发器,真空腔底部的冷却液在真空超低压环境下受热快速蒸发为热空气,散热器内部采用真空设计,使得热空气在铜网微状环境流通更迅速,接着热空气受热上升,遇到散热器上部冷源后散热,并重新凝结成液体,凝结后的冷却液通过铜微状结构毛细管道回流入散热器底部蒸发源处,回流的冷却液通过蒸发器受热后再次气化并通过铜网微管,如此反复作用。When the radiator is used, the bottom of the radiator contacts with the chip 101 and is heated. The heat source heats the copper mesh micro-evaporator. The coolant at the bottom of the vacuum chamber is heated and quickly evaporates into hot air in the vacuum ultra-low pressure environment. The interior of the radiator adopts a vacuum design, which allows the hot air to circulate more quickly in the copper mesh micro-environment. The hot air then rises due to the heat, dissipates heat after encountering the cold source on the upper part of the radiator, and condenses into liquid again. The condensed coolant flows back to the evaporation source at the bottom of the radiator through the copper micro-structure capillary channel. The refluxed coolant is heated by the evaporator and vaporizes again after passing through the copper mesh micro-tube, and the action is repeated in this way.

其中,散热器的蒸发、冷凝过程在真空腔内进行,与热管203的导热原理相近,但真空腔中的热量是在一个二维的面上进行传导,热管203的散热则属于一维线性热传导,散热器与热管203相比,导热效率更高。Among them, the evaporation and condensation process of the radiator is carried out in the vacuum chamber, which is similar to the heat conduction principle of the heat pipe 203, but the heat in the vacuum chamber is conducted on a two-dimensional surface, and the heat dissipation of the heat pipe 203 belongs to one-dimensional linear heat conduction. Compared with the heat pipe 203, the radiator has a higher thermal conductivity efficiency.

在本申请的一些实施例中,该均温片500与该芯片101焊接连接。在本申请一些实施例中,芯片101和均温片500的焊接工艺包括:在芯片101表面放置预制焊料片,然后将均温片500盖在焊料片表面上,在均温片500顶部通过压块或弹力结构施加压力,接着在真空环境下进行焊接,焊接过程中使用还原气氛包围样品。在本申请一些实施例中,焊料片的熔点为120~180℃,焊接温度约为120~180℃。In some embodiments of the present application, the temperature-regulating plate 500 is connected to the chip 101 by welding. In some embodiments of the present application, the welding process of the chip 101 and the temperature-regulating plate 500 includes: placing a prefabricated solder sheet on the surface of the chip 101, and then covering the temperature-regulating plate 500 on the surface of the solder sheet, applying pressure on the top of the temperature-regulating plate 500 through a pressing block or an elastic structure, and then welding in a vacuum environment, and using a reducing atmosphere to surround the sample during the welding process. In some embodiments of the present application, the melting point of the solder sheet is 120 to 180°C, and the welding temperature is about 120 to 180°C.

其中,为了提高该均温片500与芯片101的焊接面的焊接性能,可以对均温片500和芯片101的焊接面进行金属化处理。In order to improve the welding performance of the welding surface between the temperature-balancing plate 500 and the chip 101 , the welding surface between the temperature-balancing plate 500 and the chip 101 may be metallized.

在本申请一些实施例中,如图10所示,在步骤S101之前,该方法还包括:In some embodiments of the present application, as shown in FIG10 , before step S101, the method further includes:

S104.在该均温片的焊接面、该芯片101的焊接面和/或该散热结构的焊接面上镀金属膜。S104. Coating a metal film on the welding surface of the temperature equalizer, the welding surface of the chip 101 and/or the welding surface of the heat dissipation structure.

在本申请的一些实施例中,如图2所示,均温片500与顶板201通过焊料104焊接连接。为了提高均温片500与顶板201的焊接性能,可以在第二凸块2012与焊料104接触的表面,也即第二凸块2012的焊接面上,以及在均温片500和焊料104接触的表面,也即均温片500的焊接面上镀金属膜。示例的,金属膜的材料包括:钛Ti、镍Ni、金Au。In some embodiments of the present application, as shown in FIG2 , the temperature-regulating plate 500 is connected to the top plate 201 by welding with the solder 104. In order to improve the welding performance of the temperature-regulating plate 500 and the top plate 201, a metal film may be plated on the surface where the second bump 2012 contacts the solder 104, that is, the welding surface of the second bump 2012, and on the surface where the temperature-regulating plate 500 contacts the solder 104, that is, the welding surface of the temperature-regulating plate 500. For example, the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.

在本申请的一些实施例中,如图3所示,均温片500与芯片101通过焊料104焊接连接。为了提高均温片500与芯片101的焊接性能,可以在芯片101与焊料104接触的表面,也即芯片101 的焊接面上,以及在均温片500和焊料104接触的表面,也即均温片500的焊接面上镀金属膜。示例的,金属膜的材料包括:钛Ti、镍Ni、金Au。In some embodiments of the present application, as shown in FIG3 , the temperature-distributing plate 500 and the chip 101 are connected by soldering 104. In order to improve the soldering performance between the temperature-distributing plate 500 and the chip 101, the surface of the chip 101 in contact with the solder 104, i.e., the surface of the chip 101 A metal film is plated on the welding surface of the temperature spreader 500 and the surface in contact with the solder 104, that is, the welding surface of the temperature spreader 500. For example, the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.

在本申请的一些实施例中,如图4所示,第一均温片500与顶板201通过第一层焊料104焊接连接,且第二均温片700通过第二层焊料106与芯片101焊接连接。为了提高芯片101、第一均温片500、第二均温片700和顶板201的焊接性能,可以在第二均温片700与第二层焊料106连接的表面上,也即第二均温片700的焊接面上镀第一金属膜1071,在芯片101与第二层焊料106连接的表面上,也即芯片101的焊接面上镀第二金属膜1072,在顶板201的第二凸块2012与第一层焊料104连接的表面上,也即顶板201的第二凸块2012的焊接面上镀第三金属膜1051,并在第一均温片500与第一层焊料104连接的表面上,也即第一均温片500的焊接面上镀第四金属膜1052。示例的,金属膜的材料包括:钛Ti、镍Ni、金Au。In some embodiments of the present application, as shown in FIG. 4 , the first temperature spreader 500 is welded to the top plate 201 via a first layer of solder 104 , and the second temperature spreader 700 is welded to the chip 101 via a second layer of solder 106 . In order to improve the welding performance of the chip 101, the first temperature balancing plate 500, the second temperature balancing plate 700 and the top plate 201, a first metal film 1071 can be plated on the surface where the second temperature balancing plate 700 is connected to the second layer of solder 106, that is, the welding surface of the second temperature balancing plate 700, a second metal film 1072 can be plated on the surface where the chip 101 is connected to the second layer of solder 106, that is, the welding surface of the chip 101, a third metal film 1051 can be plated on the surface where the second bump 2012 of the top plate 201 is connected to the first layer of solder 104, that is, the welding surface of the second bump 2012 of the top plate 201, and a fourth metal film 1052 can be plated on the surface where the first temperature balancing plate 500 is connected to the first layer of solder 104, that is, the welding surface of the first temperature balancing plate 500. For example, the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.

在本申请一些实施例中,在该均温片的焊接面、该芯片101的焊接面和/或该散热结构的焊接面上镀金属膜之后,该方法还包括:清洗该温片的焊接面和该芯片101的焊接面。In some embodiments of the present application, after the metal film is plated on the welding surface of the temperature plate, the welding surface of the chip 101 and/or the welding surface of the heat dissipation structure, the method further includes: cleaning the welding surface of the temperature plate and the welding surface of the chip 101.

在本申请一些实施例中,可以对镀了膜的芯片101表面和均温片500表面进行清洗。在本申请一些实施例中,清洗的工艺包括:有机清洗、等离子清洗等。In some embodiments of the present application, the coated surface of the chip 101 and the surface of the temperature spreader 500 may be cleaned. In some embodiments of the present application, the cleaning process includes organic cleaning, plasma cleaning, and the like.

在本申请一些实施例中,还可以在芯片101周围设置保护件1010,以保护该芯片101。In some embodiments of the present application, a protective member 1010 may be further disposed around the chip 101 to protect the chip 101 .

此外,在上述焊接芯片101和均温片500的焊接工艺中,需要在均温片500顶部通过压块或弹力结构施加压力,接着在真空环境下进行焊接,焊接过程中使用还原气氛包围样品。为了避免对均温片施加的压力将熔化后的焊料挤压出去,为焊料留出空间。为此,在本申请一些实施例中,如图11所示,在步骤S102在芯片101远离电路板的一侧设置均温片和热界面材料103之前,该方法还包括:In addition, in the above-mentioned welding process of welding chip 101 and temperature equalizer 500, it is necessary to apply pressure on the top of temperature equalizer 500 through a pressure block or elastic structure, and then perform welding in a vacuum environment, and use a reducing atmosphere to surround the sample during the welding process. In order to avoid the pressure applied to the temperature equalizer to squeeze out the molten solder, leave space for the solder. To this end, in some embodiments of the present application, as shown in Figure 11, before setting the temperature equalizer and thermal interface material 103 on the side of the chip 101 away from the circuit board in step S102, the method also includes:

S105.在该芯片或电路板的表面设置限位件(图中未示出)。S105. Set a stopper (not shown in the figure) on the surface of the chip or circuit board.

其中,该限位件高于该芯片101的高度。在本申请一些实施例中,该限位件距离该电路板的高度高于该芯片距离该电路板的高度,示例的,限位件高出芯片101表面约100~250um,用于控制焊接后焊料的厚度。The stopper is higher than the chip 101. In some embodiments of the present application, the height of the stopper from the circuit board is higher than the height of the chip from the circuit board. For example, the stopper is about 100 to 250 um higher than the surface of the chip 101, which is used to control the thickness of the solder after welding.

本申请实施例对限位件的结构不做限制,在本申请的一些实施例中,该限位件为环形结构。在本申请的另一些实施例中,限位件可以为柱形结构,限位件可以为1个或多个,排布在电路板或芯片的表面。The embodiments of the present application do not limit the structure of the limiter. In some embodiments of the present application, the limiter is a ring structure. In other embodiments of the present application, the limiter can be a columnar structure, and the limiter can be one or more, arranged on the surface of the circuit board or chip.

由此,芯片101产生的热量可以传递至均温片500,在均温片500的作用下将热量分散开,降低了芯片101的功率密度,减小了芯片101和热界面材料103之间的温差,使得热量可以更好通过热界面材料103传递至壳体,提高了光模块1的散热效率。Therefore, the heat generated by the chip 101 can be transferred to the temperature equalizer 500, and the heat is dispersed under the action of the temperature equalizer 500, thereby reducing the power density of the chip 101 and the temperature difference between the chip 101 and the thermal interface material 103, so that the heat can be better transferred to the shell through the thermal interface material 103, thereby improving the heat dissipation efficiency of the optical module 1.

在本申请一些实施例中,为了将传递至壳体上的热量传导至外部环境中,以达到更好的散热效果,该光模块1例如还包括与该壳体相连的散热翅片,该散热翅片设置在该壳体背离该芯片101的一侧。In some embodiments of the present application, in order to conduct the heat transferred to the shell to the external environment to achieve a better heat dissipation effect, the optical module 1, for example, also includes a heat dissipation fin connected to the shell, and the heat dissipation fin is arranged on a side of the shell away from the chip 101.

其中,芯片101散发的热量可以通过导热部件传递给壳体,再由壳体传递给散热翅片,由于散热翅片具有较大的散热面积,能够利用外界冷却气流将自身积聚的热量散发出去,进一步提高了芯片模组的散热效率。The heat emitted by chip 101 can be transferred to the shell through the heat-conducting components, and then transferred to the heat sink fins by the shell. Since the heat sink fins have a large heat dissipation area, they can use the external cooling airflow to dissipate the accumulated heat, further improving the heat dissipation efficiency of the chip module.

本本申请实施例的通信系统,其中的光模块1的实现原理和技术效果与上述各实施例中的光模块1相同,此处不再赘述。In the communication system of the embodiment of the present application, the implementation principle and technical effect of the optical module 1 are the same as those of the optical module 1 in the above embodiments, and will not be repeated here.

由此,该通信系统采用如上该的光模块1,散热性能更好,提高了光模块1的可靠性,同时也提高了光通信系统的可靠性。Therefore, the communication system adopts the optical module 1 as described above, which has better heat dissipation performance, improves the reliability of the optical module 1, and also improves the reliability of the optical communication system.

本申请还提供一种芯片模组2,该芯片模组2可以用于路由器、服务器等电子设备中。图12为本申请实施例提供的一种芯片模组2的立体图。如图12所示,该芯片模组2至少包括:电路板400、芯片101和散热器600。The present application also provides a chip module 2, which can be used in electronic devices such as routers and servers. Figure 12 is a three-dimensional diagram of a chip module 2 provided in an embodiment of the present application. As shown in Figure 12, the chip module 2 at least includes: a circuit board 400, a chip 101 and a heat sink 600.

图14为本申请实施例提供的一种芯片模组的结构示意图。如图14所示,在本申请的一些实施例中,芯片101设置在电路板400上,并通过电路板400与基板100电连接。在本申请的一些实施例中,电路板400通过第一电连接件401和基板100电连接。在本申请的一些实施例中,芯片101通过第二电连接件402和电路板400电连接。 FIG14 is a schematic diagram of the structure of a chip module provided in an embodiment of the present application. As shown in FIG14, in some embodiments of the present application, the chip 101 is disposed on a circuit board 400 and is electrically connected to the substrate 100 through the circuit board 400. In some embodiments of the present application, the circuit board 400 is electrically connected to the substrate 100 through a first electrical connector 401. In some embodiments of the present application, the chip 101 is electrically connected to the circuit board 400 through a second electrical connector 402.

本申请实施例对第一电连接件401和第二电连接件402的结构不做限制。示例的,第一电连接件401和第二电连接件402可以包括多个均匀排布的焊球。其中,散热器600设置在芯片101背离电路板400的一侧。在本申请的一些实施例中,芯片101和电路板400之间设有热界面材料103。The embodiment of the present application does not limit the structure of the first electrical connector 401 and the second electrical connector 402. For example, the first electrical connector 401 and the second electrical connector 402 may include a plurality of uniformly arranged solder balls. The heat sink 600 is disposed on the side of the chip 101 away from the circuit board 400. In some embodiments of the present application, a thermal interface material 103 is disposed between the chip 101 and the circuit board 400.

在本申请的一些实施例中,该热界面材料103可以是柔性导热材料。该热界面材料103包括:导热凝胶、导热硅脂或导热片。In some embodiments of the present application, the thermal interface material 103 may be a flexible thermally conductive material. The thermal interface material 103 includes: thermally conductive gel, thermally conductive silicone grease or a thermally conductive sheet.

然而,随着芯片101功率密度增大,热界面材料103热阻产生的温差越大,散热效果越差。However, as the power density of the chip 101 increases, the temperature difference caused by the thermal resistance of the thermal interface material 103 becomes larger, and the heat dissipation effect becomes worse.

为此,本申请实施例提供一种改进的芯片模组2。To this end, an embodiment of the present application provides an improved chip module 2.

该芯片模组2还包括:均温片500。可以将均温片500设置在芯片101和散热器600之间,以将芯片101产生的热量均匀分散,降低芯片101的功率密度,接着通过均温片500将热量传递至散热器600,通过散热器600进行散热。The chip module 2 further includes a temperature balancing plate 500. The temperature balancing plate 500 can be disposed between the chip 101 and the heat sink 600 to evenly disperse the heat generated by the chip 101 and reduce the power density of the chip 101. The heat is then transferred to the heat sink 600 through the temperature balancing plate 500 and dissipated through the heat sink 600.

在本申请的一些实施例中,均温片500材料可为金刚石或金刚石铜合金、金刚石银合金、金刚石铝合金等含金刚石的合金材料。由此,均温片的材料包括金刚石,其热膨胀系数与芯片的热膨胀系数相接近,避免芯片焊接或者使用过程中发生翘曲,且金刚石的导热系数高,可以更好的散热。In some embodiments of the present application, the material of the temperature spreader 500 may be diamond or diamond copper alloy, diamond silver alloy, diamond aluminum alloy, etc. Therefore, the material of the temperature spreader includes diamond, whose thermal expansion coefficient is close to that of the chip, so as to avoid chip warping during welding or use, and the thermal conductivity of diamond is high, so as to better dissipate heat.

本申请实施例对该均温片500的范围不做限制。在本申请一种实现方式中,如图3所示,该均温片500可以仅设置在该散热器与该芯片101相对的位置,以连接该芯片101和该散热器,并将该基板100或该芯片101产生的热量传递至该散热器,再由该散热器将该热量传递至外部环境。The embodiment of the present application does not limit the scope of the temperature balancing plate 500. In one implementation of the present application, as shown in FIG3 , the temperature balancing plate 500 can be only arranged at a position opposite to the heat sink and the chip 101 to connect the chip 101 and the heat sink, and transfer the heat generated by the substrate 100 or the chip 101 to the heat sink, and then the heat sink transfers the heat to the external environment.

其中,该均温片500可以加工成和该芯片101相同或相近的形状。The temperature-regulating plate 500 can be processed into a shape that is the same as or similar to that of the chip 101 .

在本申请的一些实施例中,该均温片500的下表面面积可以大于或等于芯片101的上表面面积,可使得该均温片500和该芯片101的上表面完全贴合,增大了均温片500和芯片101的接触面积,提高了均温片500的导热性能,以保证芯片101的热量通过均温片500能充分传递出去。In some embodiments of the present application, the lower surface area of the temperature equalizer 500 can be greater than or equal to the upper surface area of the chip 101, so that the temperature equalizer 500 and the upper surface of the chip 101 can be completely fitted together, thereby increasing the contact area between the temperature equalizer 500 and the chip 101 and improving the thermal conductivity of the temperature equalizer 500 to ensure that the heat of the chip 101 can be fully transferred through the temperature equalizer 500.

由此,在芯片101表面焊接高导热均温片500,降低芯片101功率密度,功率密度低了之后,热界面材料103产生的温差会降低,从而实现芯片101结温降低。Therefore, a high thermal conductivity temperature balancing sheet 500 is welded on the surface of the chip 101 to reduce the power density of the chip 101 . When the power density is low, the temperature difference generated by the thermal interface material 103 is reduced, thereby reducing the junction temperature of the chip 101 .

在本申请的一些实施例中,如图14所示,芯片模组2包括1个均温片500,均温片500设置在散热器600靠近芯片101的表面上,热界面材料103位于均温片500和芯片101之间。In some embodiments of the present application, as shown in FIG. 14 , the chip module 2 includes a temperature spreader 500 , which is disposed on a surface of the heat sink 600 close to the chip 101 , and the thermal interface material 103 is located between the temperature spreader 500 and the chip 101 .

在本申请的一些实施例中,如图15所示,光模块1包括1个均温片500,均温片500设置在芯片101靠近散热器600的表面上,热界面材料103位于均温片500和散热器600之间。In some embodiments of the present application, as shown in FIG. 15 , the optical module 1 includes a temperature-balancer 500 , which is disposed on the surface of the chip 101 close to the heat sink 600 , and the thermal interface material 103 is located between the temperature-balancer 500 and the heat sink 600 .

在本申请的一些实施例中,如图16所示,芯片模组2包括2个均温片500:第一均温片500和第二均温片700,第一均温片500设置在散热器600靠近芯片101的表面上,第二均温片700设置在芯片101靠近散热器600的表面上。热界面材料103位于第一均温片500和第二均温片700之间。In some embodiments of the present application, as shown in FIG16 , the chip module 2 includes two temperature spreaders 500: a first temperature spreader 500 and a second temperature spreader 700. The first temperature spreader 500 is disposed on a surface of the heat sink 600 close to the chip 101, and the second temperature spreader 700 is disposed on a surface of the chip 101 close to the heat sink 600. The thermal interface material 103 is located between the first temperature spreader 500 and the second temperature spreader 700.

在本申请的一些实施例中,如图14所示,均温片500与散热器600通过焊料104焊接连接。为了提高均温片500与散热器600的焊接性能,可以在散热器600与焊料104接触的表面,也即散热器600的焊接面上,以及在均温片500和焊料104接触的表面,也即均温片500的焊接面上镀金属膜。示例的,金属膜的材料包括:钛Ti、镍Ni、金Au。In some embodiments of the present application, as shown in FIG14 , the temperature-regulating plate 500 is connected to the heat sink 600 by welding with the solder 104. In order to improve the welding performance of the temperature-regulating plate 500 and the heat sink 600, a metal film may be plated on the surface of the heat sink 600 in contact with the solder 104, that is, the welding surface of the heat sink 600, and on the surface of the temperature-regulating plate 500 in contact with the solder 104, that is, the welding surface of the heat sink 600. For example, the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.

在本申请的一些实施例中,如图15所示,均温片500与芯片101通过焊料104焊接连接。为了提高均温片500与芯片101的焊接性能,可以在芯片101与焊料104接触的表面,也即芯片101的焊接面上,以及在均温片500和焊料104接触的表面,也即均温片500的焊接面上镀金属膜。示例的,金属膜的材料包括:钛Ti、镍Ni、金Au。In some embodiments of the present application, as shown in FIG15 , the temperature spreader 500 is connected to the chip 101 by welding with the solder 104. In order to improve the welding performance of the temperature spreader 500 and the chip 101, a metal film may be plated on the surface of the chip 101 in contact with the solder 104, that is, the welding surface of the chip 101, and on the surface of the temperature spreader 500 in contact with the solder 104, that is, the welding surface of the temperature spreader 500. For example, the material of the metal film includes: titanium Ti, nickel Ni, and gold Au.

在本申请的一些实施例中,如图16所示,第一均温片500与散热器600通过第一层焊料104焊接连接,且第二均温片700通过第二层焊料106与芯片101焊接连接。为了提高芯片101、第一均温片500、第二均温片700和散热器600的焊接性能,可以在第二均温片700与第二层焊料106连接的表面上,也即第二均温片700的焊接面上镀第一金属膜1071,在芯片101与第二层焊料106连接的表面上,也即芯片101的焊接面上镀第二金属膜1072,在散热器600与第一层焊料104连接的表面上,也即散热器600的焊接面上镀第三金属膜1051,并在第一均温片500与第一层焊料104连接的表面上,也即第一均温片500的焊接面上镀第四金属膜1052。示例的,金属膜 的材料包括:钛Ti、镍Ni、金Au。In some embodiments of the present application, as shown in FIG16 , the first temperature spreader 500 is connected to the heat sink 600 by welding through the first layer of solder 104, and the second temperature spreader 700 is connected to the chip 101 by welding through the second layer of solder 106. In order to improve the welding performance of the chip 101, the first temperature spreader 500, the second temperature spreader 700 and the heat sink 600, a first metal film 1071 may be plated on the surface where the second temperature spreader 700 is connected to the second layer of solder 106, that is, the welding surface of the second temperature spreader 700, a second metal film 1072 may be plated on the surface where the chip 101 is connected to the second layer of solder 106, that is, the welding surface of the chip 101, a third metal film 1051 may be plated on the surface where the heat sink 600 is connected to the first layer of solder 104, that is, the welding surface of the heat sink 600, and a fourth metal film 1052 may be plated on the surface where the first temperature spreader 500 is connected to the first layer of solder 104, that is, the welding surface of the first temperature spreader 500. Example, metal film The materials include: titanium Ti, nickel Ni, and gold Au.

本申请实施例对散热器600的结构不做限制,在本申请一些实施例中,该散热器600包括:铜或铝散热器、均温板(Vapor chamber,VC)、蒸发器和液冷散热器(包括冷板)。在本申请另一些实施例中,如图14、图15、图16所示,散热器600还包括散热齿。由此,散热器600采用散热齿,可以增大散热器600的散热面,提高散热性能。The embodiment of the present application does not limit the structure of the radiator 600. In some embodiments of the present application, the radiator 600 includes: a copper or aluminum radiator, a vapor chamber (VC), an evaporator, and a liquid cooling radiator (including a cold plate). In other embodiments of the present application, as shown in Figures 14, 15, and 16, the radiator 600 also includes heat dissipation teeth. Therefore, the radiator 600 uses heat dissipation teeth to increase the heat dissipation surface of the radiator 600 and improve the heat dissipation performance.

在本申请一些实施例中,散热器600的外壳材料为铜或铝,内部为液体工质。In some embodiments of the present application, the outer shell material of the heat sink 600 is copper or aluminum, and the interior is filled with liquid working fluid.

其中,冷板为液冷部件,当冷板壳体与热源接触时,冷板内走液体工质可以带走热量。Among them, the cold plate is a liquid cooling component. When the cold plate shell contacts the heat source, the liquid working medium in the cold plate can take away the heat.

蒸发器为相变散热结构件,蒸发器壳体与热源接触时,内部液体工质受热发生相变吸热,带走热量。The evaporator is a phase-change heat dissipation structural component. When the evaporator shell comes into contact with the heat source, the internal liquid working fluid undergoes phase change and absorbs heat, taking away the heat.

其中,图17为本申请实施例提供的一种散热器的结构示意图,在本申请的一些实施例中,如图17所示,在本申请的一些实施例中,该散热器600包括:壳体601,该壳体601围设成密封的真空腔体,其中,该腔体内填充有工质602,工质602包括:冷却液,且该腔体的内壁上设有毛细结构。其中,该冷却液可以是氟利昂等冷媒或水。该毛细结构例如为铜网微状蒸发器。Among them, Figure 17 is a schematic diagram of the structure of a radiator provided by an embodiment of the present application. In some embodiments of the present application, as shown in Figure 17, in some embodiments of the present application, the radiator 600 includes: a shell 601, the shell 601 is surrounded by a sealed vacuum cavity, wherein the cavity is filled with a working medium 602, the working medium 602 includes: a coolant, and a capillary structure is provided on the inner wall of the cavity. Among them, the coolant can be a refrigerant such as Freon or water. The capillary structure is, for example, a copper mesh micro-evaporator.

使用散热器时,散热器底部与热源1001接触受热,热源1001可以包括如上该的芯片模组2。热源加热铜网微状蒸发器,真空腔底部的冷却液在真空超低压环境下受热快速蒸发为热空气,散热器内部采用真空设计,使得热空气在铜网微状环境流通更迅速,接着热空气受热上升,遇到散热器上部冷源后散热,并重新凝结成液体,凝结后的冷却液通过铜微状结构毛细管道回流入散热器底部蒸发源处,回流的冷却液通过蒸发器受热后再次气化并通过铜网微管,如此反复作用。When the radiator is used, the bottom of the radiator contacts with the heat source 1001 for heating, and the heat source 1001 may include the chip module 2 as described above. The heat source heats the copper mesh micro-evaporator, and the coolant at the bottom of the vacuum chamber is heated and quickly evaporates into hot air in the vacuum ultra-low pressure environment. The inside of the radiator adopts a vacuum design, so that the hot air circulates more quickly in the copper mesh micro-environment. Then the hot air rises due to the heat, dissipates heat after encountering the cold source on the upper part of the radiator, and condenses into liquid again. The condensed coolant flows back to the evaporation source at the bottom of the radiator through the copper micro-structure capillary channel. The refluxed coolant is heated by the evaporator and vaporizes again and passes through the copper mesh micro-tube, and the action is repeated.

以上该,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何在本申请揭露的技术范围内的变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以该权利要求的保护范围为准。 The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims (20)

一种芯片模组,其特征在于,包括:电路板,以及设置在所述电路板上的芯片;A chip module, characterized in that it comprises: a circuit board, and a chip arranged on the circuit board; 所述芯片远离所述电路板的一侧设有散热结构;A heat dissipation structure is provided on a side of the chip away from the circuit board; 所述芯片和所述散热结构之间层叠设有热界面材料和均温片;A thermal interface material and a temperature-dissipating sheet are stacked between the chip and the heat dissipation structure; 其中,所述均温片的热膨胀系数和所述芯片的热膨胀系数相匹配,所述均温片的导热系数大于所述热界面材料的导热系数。The thermal expansion coefficient of the temperature-regulating plate matches the thermal expansion coefficient of the chip, and the thermal conductivity of the temperature-regulating plate is greater than the thermal conductivity of the thermal interface material. 根据权利要求1所述的芯片模组,其特征在于,所述均温片的尺寸大于或等于所述芯片的尺寸。The chip module according to claim 1 is characterized in that the size of the temperature spreader is greater than or equal to the size of the chip. 根据权利要求1或2所述的芯片模组,其特征在于,所述均温片包括:第一均温片,所述芯片与所述热界面材料之间设有所述第一均温片。The chip module according to claim 1 or 2 is characterized in that the temperature spreader comprises: a first temperature spreader, and the first temperature spreader is arranged between the chip and the thermal interface material. 根据权利要求3所述的芯片模组,其特征在于,所述第一均温片与所述芯片焊接连接,所述芯片的焊接面和所述第一均温片的焊接面上镀有金属膜。The chip module according to claim 3 is characterized in that the first temperature spreader is welded to the chip, and a metal film is plated on the welding surface of the chip and the welding surface of the first temperature spreader. 根据权利要求3或4所述的芯片模组,其特征在于,所述第一均温片包括第一部分和第二部分,所述第一部分靠近所述芯片设置,所述第二部分靠近所述热界面材料设置,所述第一部分的尺寸与所述芯片的尺寸相同,所述第二部分的尺寸大于所述第一部分的尺寸。The chip module according to claim 3 or 4 is characterized in that the first temperature spreader includes a first part and a second part, the first part is arranged close to the chip, the second part is arranged close to the thermal interface material, the size of the first part is the same as the size of the chip, and the size of the second part is larger than the size of the first part. 根据权利要求1-5任一项所述的芯片模组,其特征在于,所述均温片包括:第二均温片,所述热界面材料和所述散热结构之间设有所述第二均温片。The chip module according to any one of claims 1 to 5 is characterized in that the temperature spreader comprises: a second temperature spreader, and the second temperature spreader is arranged between the thermal interface material and the heat dissipation structure. 根据权利要求1-6任一项所述的芯片模组,其特征在于,所述均温片采用金刚石或含有金刚石的合金材料。The chip module according to any one of claims 1 to 6 is characterized in that the temperature spreader is made of diamond or an alloy material containing diamond. 根据权利要求1-7任一项所述的芯片模组,其特征在于,所述热界面材料包括:导热凝胶、导热硅脂或导热片。The chip module according to any one of claims 1 to 7, characterized in that the thermal interface material comprises: thermally conductive gel, thermally conductive silicone grease or a thermally conductive sheet. 根据权利要求1-8任一项所述的芯片模组,其特征在于,所述电路板上设有限位件,所述限位件设置在所述芯片周围,所述限位件高于所述芯片。The chip module according to any one of claims 1 to 8 is characterized in that a limiting member is provided on the circuit board, the limiting member is arranged around the chip, and the limiting member is higher than the chip. 根据权利要求1-9任一项所述的芯片模组,其特征在于,所述散热结构包括:冷板、均温板、蒸发散热器。The chip module according to any one of claims 1 to 9 is characterized in that the heat dissipation structure comprises: a cold plate, a temperature homogenizing plate, and an evaporative heat sink. 一种光模块,其特征在于,包括:壳体,以及如权利要求1-10任一项所述的芯片模组,所述散热结构为所述壳体的一部分,或,所述散热结构设置在所述壳体外侧。An optical module, characterized in that it comprises: a shell, and a chip module according to any one of claims 1 to 10, wherein the heat dissipation structure is a part of the shell, or the heat dissipation structure is arranged outside the shell. 根据权利要求11所述的光模块,其特征在于,所述光模块还包括:基板和光器件,所述光器件和所述芯片模组设置在所述基板上。The optical module according to claim 11 is characterized in that the optical module further comprises: a substrate and an optical device, and the optical device and the chip module are arranged on the substrate. 根据权利要求12所述的光模块,其特征在于,所述壳体包括:上壳和底板,所述上壳包括:顶板和支架,所述支架与所述底板连接,所述基板与所述底板连接。The optical module according to claim 12 is characterized in that the shell comprises: an upper shell and a bottom plate, the upper shell comprises: a top plate and a bracket, the bracket is connected to the bottom plate, and the base plate is connected to the bottom plate. 根据权利要求13所述的光模块,其特征在于,所述顶板上设有第一凸块和第二凸块,所述第一凸块通过热界面材料与所述光器件连接,所述第二凸块与所述芯片模组连接。The optical module according to claim 13 is characterized in that a first bump and a second bump are provided on the top plate, the first bump is connected to the optical device through a thermal interface material, and the second bump is connected to the chip module. 一种通信系统,其特征在于,包括:数据源,光学信道,以及如权利要求11-14任一项所述的光模块,所述数据源用于向所述光模块发送数据信号,所述光模块用于将所述数据信号转换为光信号,并通过所述光学信道进行传输。A communication system, characterized in that it comprises: a data source, an optical channel, and an optical module as described in any one of claims 11 to 14, wherein the data source is used to send a data signal to the optical module, and the optical module is used to convert the data signal into an optical signal and transmit it through the optical channel. 一种电子设备,其特征在于,所述电子设备包括:基板,以及如权利要求1-10任一项所述的芯片模组,所述芯片模组设置在所述基板上。An electronic device, characterized in that the electronic device comprises: a substrate, and a chip module according to any one of claims 1 to 10, wherein the chip module is arranged on the substrate. 根据权利要求16所述的电子设备,其特征在于,所述电子设备为路由器、服务器。The electronic device according to claim 16 is characterized in that the electronic device is a router or a server. 一种芯片模组的制备方法,其特征在于,包括:A method for preparing a chip module, characterized by comprising: 将芯片焊接在电路板上;Solder the chip on the circuit board; 在芯片远离电路板的一侧层叠设置均温片和热界面材料;所述均温片的热膨胀系数和所述芯片的热膨胀系数相匹配,所述均温片的导热系数大于所述热界面材料的导热系数;A temperature spreader and a thermal interface material are stacked on a side of the chip away from the circuit board; the thermal expansion coefficient of the temperature spreader matches the thermal expansion coefficient of the chip, and the thermal conductivity of the temperature spreader is greater than the thermal conductivity of the thermal interface material; 在层叠设置的所述均温片和所述热界面材料远离芯片的一侧设置散热结构,其中,所述芯片和所述热界面材料之间,和/或所述热界面材料和所述散热结构之间设有所述均温片。A heat dissipation structure is arranged on the side of the stacked temperature equalizer and the thermal interface material away from the chip, wherein the temperature equalizer is arranged between the chip and the thermal interface material, and/or between the thermal interface material and the heat dissipation structure. 根据权利要求18所述的芯片模组的制备方法,其特征在于,所述将芯片焊接在电路板上之前,所述制备方法还包括: The method for preparing a chip module according to claim 18, characterized in that before soldering the chip on the circuit board, the method further comprises: 在所述均温片的焊接面、所述芯片的焊接面和/或所述散热结构的焊接面上镀金属膜。A metal film is plated on the welding surface of the temperature equalizer, the welding surface of the chip and/or the welding surface of the heat dissipation structure. 根据权利要求18或19所述的芯片模组的制备方法,其特征在于,所述在芯片远离电路板的一侧设置均温片和热界面材料之前,所述制备方法还包括:The method for preparing a chip module according to claim 18 or 19, characterized in that before providing a temperature spreader and a thermal interface material on a side of the chip away from the circuit board, the method further comprises: 在所述电路板或所述芯片的表面设置限位件;其中,所述限位件距离所述电路板的高度高于所述芯片距离所述电路板的高度。 A limiting member is disposed on a surface of the circuit board or the chip; wherein a height of the limiting member from the circuit board is higher than a height of the chip from the circuit board.
PCT/CN2024/078382 2023-02-28 2024-02-23 Chip module and preparation method therefor, optical module, communication system, and electronic device WO2024179385A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202310230206.2 2023-02-28
CN202310230206.2A CN118572015A (en) 2023-02-28 2023-02-28 Chip module, preparation method thereof, optical module, communication system and electronic equipment

Publications (1)

Publication Number Publication Date
WO2024179385A1 true WO2024179385A1 (en) 2024-09-06

Family

ID=92465942

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/078382 WO2024179385A1 (en) 2023-02-28 2024-02-23 Chip module and preparation method therefor, optical module, communication system, and electronic device

Country Status (2)

Country Link
CN (1) CN118572015A (en)
WO (1) WO2024179385A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060261469A1 (en) * 2005-05-23 2006-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Sealing membrane for thermal interface material
CN109065504A (en) * 2018-06-29 2018-12-21 北京比特大陆科技有限公司 A kind of chip dustproof construction and calculate equipment, mine machine
CN213026105U (en) * 2020-01-21 2021-04-20 华为技术有限公司 Semiconductor package structure
CN113809032A (en) * 2021-08-09 2021-12-17 华为技术有限公司 Power module, power supply circuit and chip
CN115274584A (en) * 2022-06-24 2022-11-01 华为数字能源技术有限公司 A power module and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060261469A1 (en) * 2005-05-23 2006-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Sealing membrane for thermal interface material
CN109065504A (en) * 2018-06-29 2018-12-21 北京比特大陆科技有限公司 A kind of chip dustproof construction and calculate equipment, mine machine
CN213026105U (en) * 2020-01-21 2021-04-20 华为技术有限公司 Semiconductor package structure
CN113809032A (en) * 2021-08-09 2021-12-17 华为技术有限公司 Power module, power supply circuit and chip
CN115274584A (en) * 2022-06-24 2022-11-01 华为数字能源技术有限公司 A power module and its manufacturing method

Also Published As

Publication number Publication date
CN118572015A (en) 2024-08-30

Similar Documents

Publication Publication Date Title
US11201102B2 (en) Module lid with embedded two-phase cooling and insulating layer
JP4639231B2 (en) Liquid metal thermal interface for integrated circuit devices
US7731079B2 (en) Cooling apparatus and method of fabrication thereof with a cold plate formed in situ on a surface to be cooled
KR950014046B1 (en) Optimized heat pipe and electronics integrated assembly
US20190206764A1 (en) Thermal management component
US7367195B2 (en) Application and removal of thermal interface material
US11024557B2 (en) Semiconductor package structure having vapor chamber thermally connected to a surface of the semiconductor die
US20030110788A1 (en) Method and apparatus for cooling an integrated circuit package using a cooling fluid
JP2008060172A (en) Semiconductor device
TWI235817B (en) Heat-dissipating module
CN211907417U (en) Semiconductor packaging piece and electronic element
CN109906017B (en) cooling unit
CN113454774A (en) Packaged chip and manufacturing method thereof
TW201919985A (en) Monolithic phase change heat dissipating device
CN110572981A (en) A heat conduction device and terminal equipment
TW201350781A (en) High efficiency vapor chamber
WO2024160173A1 (en) Heat dissipation assembly and electronic device
US20090165302A1 (en) Method of forming a heatsink
WO2024179385A1 (en) Chip module and preparation method therefor, optical module, communication system, and electronic device
US7355276B1 (en) Thermally-enhanced circuit assembly
CN209517822U (en) Heat radiation unit
TWI729325B (en) Heat dissipation unit
CN109874268B (en) Manufacturing method of cooling unit
TW200421571A (en) Semiconductor device
TWM443873U (en) High efficiency vapor chamber

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24763067

Country of ref document: EP

Kind code of ref document: A1