CN109065504A - A kind of chip dustproof construction and calculate equipment, mine machine - Google Patents
A kind of chip dustproof construction and calculate equipment, mine machine Download PDFInfo
- Publication number
- CN109065504A CN109065504A CN201810695635.6A CN201810695635A CN109065504A CN 109065504 A CN109065504 A CN 109065504A CN 201810695635 A CN201810695635 A CN 201810695635A CN 109065504 A CN109065504 A CN 109065504A
- Authority
- CN
- China
- Prior art keywords
- chip
- shielding layer
- metal shielding
- dust
- radiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000010276 construction Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 23
- 230000017525 heat dissipation Effects 0.000 claims abstract description 12
- 238000007731 hot pressing Methods 0.000 claims abstract description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- 238000005065 mining Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000004519 grease Substances 0.000 claims description 4
- 239000012782 phase change material Substances 0.000 claims description 4
- 239000000428 dust Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 230000002411 adverse Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The present embodiments relate to the dust-proof fields of chip, and provide a kind of chip dustproof construction and calculate equipment, mine machine.Wherein, chip dustproof construction is arranged between chip and radiator, and including pad and metal screen layer；Wherein, around the chip, the metal screen layer passes through the pad solder and covers on above the chip pad solder, and the radiator is connected above the metal screen layer；Filled with the thermal interfacial material with high thermal conductivity coefficient between the metal screen layer and the chip.The present invention protects chip to enter pin from dust and causes the generation of bad phenomenon, and the intensity of chip area can be enhanced due to being provided with metal screen layer between chip and radiator, from vibration influence；Moreover, because four vertex in the top plate of metal screen layer offer through-hole, it is therefore prevented that the hot pressing in metal screen layer is excessively high, and is filled with thermal interfacial material between top plate and radiator, therefore heat dissipation effect can be enhanced.
Description
Technical Field
The invention relates to the field of chip dust prevention, in particular to a chip dust prevention structure, computing equipment and an ore machine.
Background
At present, the construction environment of an ore machine is generally in a place with rare personnel, large wind dust and inhospitable and cool environment. If used in such an environment for an extended period of time, as shown in FIG. 1, the ore mining chip may be susceptible to dust ingress and deposition at the chip pins, and thus result in reduced or even failure of the chip.
It should be noted that the above background description is only for the sake of clarity and complete description of the technical solutions of the present invention and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the invention.
Disclosure of Invention
The invention discloses a chip dustproof structure, a computing device and an ore machine, which are used for reducing the occurrence of the phenomenon of bad chips caused by the entering of dust.
In order to achieve the above object, the embodiment of the invention discloses a chip dustproof structure, which is arranged between a chip and a radiator and comprises a bonding pad and a metal shielding layer; the bonding pad is welded around the chip, the metal shielding layer is welded through the bonding pad and covers the chip, and the radiator is connected above the metal shielding layer; and a thermal interface material with high thermal conductivity is filled between the metal shielding layer and the chip.
In one embodiment, the metal shielding layer includes a top plate and a side plate; the top plate and the side plate form a cavity structure and cover the chip, the top plate is connected with the radiator, and the side plate is welded on the bonding pad.
In one embodiment, the metal shielding layer and the heat sink are fixedly connected by screws or fasteners.
In one embodiment, a thermal interface material with high thermal conductivity is used between the metal shielding layer and the heat sink to fill a structural gap between the metal shielding layer and the heat sink.
In one embodiment, through holes are formed at four corners of a top plate of the metal shielding layer for heat dissipation, so as to prevent excessive hot pressing inside the metal shielding layer.
In one embodiment, the size of the through-hole is 1mm to 2 mm.
In one embodiment, the pad has a width of 0.6mm to 0.7 mm.
In one embodiment, the metal shielding layer is made of copper.
In one embodiment, the thermal interface material having a high thermal conductivity has a thermal conductivity of 3-12W/M × K.
In one embodiment, the thermal interface material comprises at least one or more of a thermally conductive gel, a thermally conductive silicone grease, a thermally conductive silicone pad, a thermally conductive paste, and a phase change material.
In order to achieve the above object, an embodiment of the present invention further discloses a computing device, including a circuit printed board and a chip soldered on the circuit printed board, wherein the circuit printed board further includes a chip dust-proof structure as described in the foregoing embodiment, and the chip dust-proof structure is covered over the chip.
In order to achieve the above object, an embodiment of the present invention further discloses an ore mining machine, which includes a chassis, a control board located inside the chassis, an operation board connected to the control board, and the chip dust-proof structure according to the foregoing embodiment; the chip dustproof structure is covered and connected above the chip of the control panel and/or the operation panel.
According to the chip dustproof structure, the computing equipment and the mining machine with the chip dustproof structure, due to the fact that the metal shielding layer is arranged between the chip and the radiator, the chip is protected from the adverse phenomenon caused by the fact that dust enters the pins, the strength of a chip area can be enhanced, and the chip area is prevented from being influenced by vibration; moreover, the through holes are formed in the four top corners of the top plate of the metal shielding layer, so that the phenomenon that the hot pressing in the metal shielding layer is too high is prevented, and the thermal interface material is filled between the top plate and the radiator, so that the radiating effect can be enhanced.
Specific embodiments of the present invention are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the invention may be employed. It should be understood that the embodiments of the invention are not so limited in scope. The embodiments of the invention include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 illustrates a chip arrangement in a conventional mining machine;
FIG. 2 is a schematic structural diagram of a chip dust-proof structure according to an embodiment of the present invention;
FIG. 3 is a top sectional view of a chip dust-proof structure according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a chip dust-proof structure according to an embodiment of the present invention, in which through holes are formed at four top corners of a top plate of a metal shielding layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The principles and spirit of the present invention are explained in detail below with reference to several representative embodiments of the invention.
The chip dustproof structure of the embodiment of the invention is mainly characterized in that a circle of bonding pad is added around an operation chip area and/or a storage chip area in an ore machine, then a metal shielding cover with good heat conductivity is welded on the bonding pad, and heat conduction material with high heat conductivity coefficient is filled between the metal shielding cover and the chip, so that the occurrence of adverse phenomena caused by that dust enters a chip pin can be avoided, and the heat dissipation of the chip can be ensured not to be influenced.
Fig. 2 is a schematic structural diagram of a chip dust-proof structure according to an embodiment of the present invention, and fig. 3 is a top sectional view thereof. The chip, chip pins, PCB board, and heat sink identified in fig. 2 and 3 are for clarity of illustration only, and are not considered to be part of the dust-proof structure of the chip. As shown in fig. 2, the chip dust-proof structure in the present embodiment is disposed between the chip and the heat spreader, and includes a pad (shown in fig. 3) and a metal shielding layer; the bonding pad is welded around the chip, the metal shielding layer is welded through the bonding pad and covers the chip, and the radiator is connected above the metal shielding layer; and a thermal interface material with high thermal conductivity is filled between the metal shielding layer and the chip. As can be seen from fig. 2, due to the addition of the dustproof structure, dust can be blocked outside the metal shielding layer, so that the occurrence of undesirable phenomena caused by the dust entering the chip pins is avoided.
In engineering practice, there is a temperature difference on both sides of the contact surface, since the contact between any solid surfaces cannot be tight. In this case, only the contact area between the two contact surfaces conducts heat directly, there is a gap between the two contact surfaces, and the heat is transferred by means of heat conduction, convection and radiation of the fluid filling the gap, so that there is a resistance to heat transfer, called thermal contact resistance. In the embodiment of the invention, structural gaps exist between the metal shielding layer and the chip, between the metal shielding layer and the radiator and between contact surfaces of the metal shielding layer and the radiator, so that a thermal interface material with high thermal conductivity is required to be used for filling the structural gaps, so that interface contact thermal resistance is reduced, and radiating efficiency is improved. In the embodiment of the invention, in order to better realize the heat dissipation of the chip, a thermal interface material with a high thermal conductivity coefficient is used between the metal shielding layer and the heat sink, and between the metal shielding layer and the chip to fill the structural gap, the thermal interface material with the high thermal conductivity coefficient comprises at least one or more of thermal conductive gel, thermal conductive silicone grease, a thermal conductive silicone pad, thermal conductive mud and a phase change material, and the thermal conductivity coefficient of the thermal interface material is 3-12W/M K, and even can be as high as 60W/M K.
In this embodiment, the bonding pad may be bonded to the operation chip and the memory chip, that is, the chips in one area may be covered by a metal shielding layer bonded to the bonding pad, as shown in fig. 3, the area surrounded by the bonding pad includes not only the operation chip but also a plurality of memory chips, and in this case, the dustproof effect can be achieved by only using one metal shielding layer. In this embodiment, the width of the pad may be 0.6mm-0.7mm, preferably 0.6mm, and of course, the width of the pad may be adaptively changed according to the circuit layout of the circuit board. In the present embodiment, the material of the metal shielding layer may be copper, or other metal with relatively good thermal conductivity, such as tin, may be used, but the heat dissipation effect of copper is the best.
As shown in fig. 2, in the present embodiment, the metal shielding layer includes a top plate and a side plate; the top plate and the side plate are welded to form a cavity structure and cover the chip, the top plate is connected with the radiator, and the side plate is welded to the welding disc.
In one embodiment, the metal shielding layer and the heat sink are fixedly connected by screws or fasteners. If the screw fixing mode is adopted, through holes can be formed in the positions, corresponding to the radiator and the metal shielding layer, of the radiator, and the screws penetrate through the metal shielding layer and the radiator, so that the radiator and the metal shielding layer are fixedly connected; if the mode of buckle is adopted, can be provided with the spring card on the metallic shield layer, be provided with the buckle on the radiator, with the buckle lock joint on the radiator in the spring card on the metallic shield layer, with radiator and metallic shield layer fixed connection are in the same place. The fixed connection mode is convenient to disassemble and is convenient for technical personnel to check problems, and a thermal interface material with high thermal conductivity coefficient can be filled between the fixed connection mode and the thermal interface material to replace a heat-conducting adhesive with low thermal conductivity coefficient, so that the heat dissipation of the chip is more convenient. As mentioned above, the thermal interface material with high thermal conductivity includes at least one or more of thermal conductive gel, thermal conductive silicone grease, thermal conductive silicone pad, thermal conductive paste, and phase change material, and the thermal conductivity of the thermal interface material is 3-12W/M K, and may even be as high as 60W/M K
In another embodiment of the present invention, as shown in fig. 4, through holes are formed at four top corners of the top plate of the metal shielding layer to communicate with the outside, so as to prevent excessive heat pressure inside the metal shielding layer. In one embodiment, the size of the through holes is 1mm to 2 mm. The size of the through hole determines the ventilation capacity of the metal shielding layer, the ventilation and heat dissipation capacity of the heat dissipation holes with the aperture of 1mm-2mm is outstanding, and the physical temperature in the metal shielding layer can be directly reduced. Certainly, the method for forming the through holes is only a preferred embodiment, but the invention is not limited to this, and in order to achieve uniform heat dissipation, a certain number of through holes may be formed at the edges of the metal shielding layer according to actual operation, but the more the through holes, the better the through holes, and the dustproof effect of the metal shielding layer is ensured at the same time.
The embodiment of the invention also discloses computing equipment which comprises a circuit printing board and a chip welded on the circuit printing board, wherein the circuit printing board further comprises the chip dustproof structure disclosed by the embodiment, and the chip dustproof structure covers the chip. The chip referred to herein may be understood as a region composed of a plurality of chips, and the chip may include an arithmetic chip or a memory chip.
The embodiment of the invention also discloses an ore mining machine, which comprises a case, a control board positioned in the case, an expansion board connected with the control board, an operation board connected with the expansion board and the chip dustproof structure disclosed by the embodiment; the chip dustproof structure is covered and connected above the chip of the control panel and/or the operation panel.
According to the chip dustproof structure, the computing equipment and the mining machine with the chip dustproof structure, due to the fact that the metal shielding layer is arranged between the chip and the radiator, the chip is protected from the adverse phenomenon caused by the fact that dust enters the pins, the strength of a chip area can be enhanced, and the chip area is prevented from being influenced by vibration; moreover, the through holes are formed in the four top corners of the top plate of the metal shielding layer, so that the phenomenon that the hot pressing in the metal shielding layer is too high is avoided, and the thermal interface material with high heat conductivity coefficient is filled between the top plate and the radiator, so that the heat dissipation effect can be enhanced.
The principle and the implementation mode of the invention are explained by applying specific embodiments in the invention, and the description of the embodiments is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (12)
1. A chip dustproof structure is characterized by being arranged between a chip and a radiator and comprising a bonding pad and a metal shielding layer; wherein,
the bonding pad is welded around the chip, the metal shielding layer is welded through the bonding pad and covers the chip, and the radiator is connected above the metal shielding layer;
and a thermal interface material with high thermal conductivity is filled between the metal shielding layer and the chip.
2. The chip dust-proof structure of claim 1, wherein the metal shielding layer comprises a top plate and a side plate;
the top plate and the side plate form a cavity structure and cover the chip, the top plate is connected with the radiator, and the side plate is welded on the bonding pad.
3. The chip dustproof structure according to claim 2, wherein the metal shielding layer and the heat sink are fixedly connected by screws or fasteners.
4. The chip dust-proof structure of claim 3, wherein a thermal interface material with high thermal conductivity is used between the metal shielding layer and the heat sink to fill a structural gap between the metal shielding layer and the heat sink.
5. The chip dustproof structure of claim 2, wherein through holes are formed at four corners of a top plate of the metal shielding layer for heat dissipation, so as to prevent over-high hot pressing inside the metal shielding layer.
6. The chip dust-proof structure of claim 5, wherein the size of the through hole is 1mm to 2 mm.
7. The chip dust-proof structure according to any one of claims 1 to 6, wherein the width of the bonding pad is 0.6mm to 0.7 mm.
8. The chip dustproof structure according to any one of claims 1 to 6, wherein the metal shielding layer is made of copper.
9. The heat dissipating structure of any of claims 1-6, wherein the thermal interface material having a high thermal conductivity has a thermal conductivity of 3-12W/M K.
10. The heat dissipation structure of claim 9, wherein the thermal interface material comprises at least one or more of a thermally conductive gel, a thermally conductive silicone grease, a thermally conductive silicone pad, a thermally conductive paste, and a phase change material.
11. A computing device comprising a circuit board and a chip soldered on the circuit board, wherein the circuit board further comprises a chip dust-proof structure according to any one of claims 1 to 10 thereon, and the chip dust-proof structure is covered over the chip.
12. A mining machine comprising a machine box, a control panel located inside the machine box, an arithmetic panel connected to the control panel, and the chip dust-proofing structure of any one of claims 1-10; the chip dustproof structure is covered and connected above the chip of the control panel and/or the operation panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810695635.6A CN109065504B (en) | 2018-06-29 | 2018-06-29 | Chip dustproof construction and calculating equipment, ore deposit machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810695635.6A CN109065504B (en) | 2018-06-29 | 2018-06-29 | Chip dustproof construction and calculating equipment, ore deposit machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109065504A true CN109065504A (en) | 2018-12-21 |
| CN109065504B CN109065504B (en) | 2020-09-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810695635.6A Active CN109065504B (en) | 2018-06-29 | 2018-06-29 | Chip dustproof construction and calculating equipment, ore deposit machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109065504B (en) |
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| CN111954428A (en) * | 2019-05-15 | 2020-11-17 | 浙江宇视科技有限公司 | Heat radiation structure and electronic assembly with same |
| CN115188723A (en) * | 2022-09-14 | 2022-10-14 | 江苏卓胜微电子股份有限公司 | System-in-package structure and manufacturing method thereof |
| WO2023071583A1 (en) * | 2021-10-26 | 2023-05-04 | 北京比特大陆科技有限公司 | Chip module, circuit board, and electronic device |
| CN116669279A (en) * | 2022-12-30 | 2023-08-29 | 荣耀终端有限公司 | Circuit board assembly and electronic equipment |
| WO2024179385A1 (en) * | 2023-02-28 | 2024-09-06 | 华为技术有限公司 | Chip module and preparation method therefor, optical module, communication system, and electronic device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN109065504B (en) | 2020-09-04 |
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