WO2024143210A1 - Member, method for manufacturing member, photosensitive resin composition, and semiconductor member - Google Patents

Abstract

Provided are a member, a method for manufacturing the member, a photosensitive resin composition which is used in the method for manufacturing the member, and a semiconductor member comprising the member. The member comprises a substrate, an insulating pattern disposed on the substrate, and a conductive pattern present between patterns of the insulating pattern. In a direction perpendicular to the substrate surface, the difference between a maximum value and a minimum value of the distance from the substrate surface to a surface of the conductive pattern on the side opposite the substrate is less than or equal to 500 nm, and the angle of a corner formed by a bottom surface of the conductive pattern and a side surface of the conductive pattern is greater than 90° and less than or equal to 110°.

Description

Component, method for manufacturing component, photosensitive resin composition, and semiconductor component

The present invention relates to a component, a method for manufacturing the component, a photosensitive resin composition, and a semiconductor component.

Electronic devices such as mobile phones and tablet devices are becoming smaller and smaller while at the same time their functions are becoming more diverse. To meet these needs, the electronic circuits built into these devices must be made even smaller, more highly integrated, and more densely packed, and advances in multilayer wiring technology are needed.
In the manufacture of components on which wiring is formed by multilayer wiring technology, a SAP (Semi Additive Process) method, a Damascene method, or the like has been conventionally used.
The SAP method is a method in which a resist is formed in advance on non-circuit areas, the circuit areas are formed by plating, the resist is then removed to form wiring, and the spaces between the wiring are then filled with an insulating material.
The damascene method is a method in which a groove in the shape of a wiring is formed in an interlayer insulating film and a metal such as copper is filled in. The damascene method has the advantage that even metals that are difficult to dry etch, such as copper, can be easily used as wiring materials.

There are two known damascene methods: a single damascene method and a dual damascene method.
Single damascene is a method of forming a via pattern and a wiring pattern separately, for example by embedding copper wiring in an insulating film in which a via hole has been formed and polishing it, and then forming an insulating film with a wiring groove, embedding copper wiring in the wiring groove, and polishing it.
In contrast to this, dual damascene is a method in which an insulating film having wiring grooves and via holes is formed, then wiring metal is deposited to fill both the wiring grooves and the via holes at the same time, and then polishing is performed to form wiring.
In the damascene method, since the wiring metal is polished, a flat wiring structure can be obtained without flattening between layers, which is advantageous in that it is easy to form multiple layers of fine wiring.
In particular, dual damascene is attracting attention as a technology that can reduce manufacturing costs because it can reduce the number of manufacturing steps.

For example, Patent Document 1 describes a negative photosensitive resin composition that contains a polyimide or a polyimide precursor, a compound that generates an acid when irradiated with active light, and a crosslinking agent that acts by the acid, wherein the crosslinking agent contains at least one of a first compound having two or more functional groups of at least one type selected from the group consisting of a methylol group and an alkoxyalkyl group, and a second compound having two or more functional groups of at least one type selected from the group consisting of an acryloyloxy group, a methacryloyloxy group, and a glycidyloxy group, and a method for producing a semiconductor device member using the composition.
Non-Patent Document 1 describes the formation of a copper wiring layer by a dual damascene process using a negative thermosetting phenolic material.

JP 2019-090946 A

Advances in Photosensitive Polymer Based Damascene RDL Processes: Toward Submicrometer Pitches With More Metal Layers, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), pp340-346

In manufacturing methods for components on which conductive patterns (wiring) are formed, there is a need to improve the adhesion of the conductive pattern and prevent peeling of the conductive pattern.

The object of the present invention is to provide a member in which peeling of a conductive pattern is suppressed, a method for manufacturing the member, a photosensitive resin composition used in the method for manufacturing the member, and a semiconductor member including the member.

Examples of specific embodiments of the present invention are given below.
<1> A substrate,
an insulating pattern disposed on the substrate;
A member having a conductive pattern present between the insulating patterns,
a difference between a maximum value and a minimum value of a distance from the surface of the substrate to a surface of the conductive pattern on the opposite side to the substrate in a direction perpendicular to the substrate surface is 500 nm or less;
A component, wherein an angle formed between a bottom surface of the conductive pattern and a side surface of the conductive pattern is greater than 90° and is equal to or smaller than 110°.
<2> The member according to <1>, wherein the conductive pattern is a line and space pattern, and the conductive pattern has a line width of 0.1 μm or more and 10 μm or less.
<3> The member according to <1> or <2>, wherein the insulating pattern has an indentation elastic modulus of 6.0 GPa or less.
<4> The member according to any one of <1> to <3>, wherein the insulating pattern contains polyimide.
<5> The member according to <4>, wherein the polyimide has a cyclization rate of 70% or more.
<6> The member according to any one of <1> to <5>, wherein the insulating pattern contains an ionic compound.
<7> A member comprising: a substrate; a first insulating pattern present on the substrate; a second insulating pattern present on at least a portion of a surface of the first insulating pattern; and a conductive pattern providing electrical continuity between an area between the first insulating pattern and an area between the second insulating pattern,
a difference between a maximum value and a minimum value of a distance from the surface of the substrate to a surface of the conductive pattern on the opposite side to the substrate in a direction perpendicular to the substrate surface of the member is 500 nm or less;
A component in which the angle formed between a bottom surface of the conductive pattern and a side surface of the conductive pattern in a region between the second insulating patterns is greater than 90° and is 110° or less.
<8> A substrate,
an insulating pattern disposed on the substrate;
A method for producing a member having a conductive pattern present between the insulating patterns, comprising the steps of:
a conductive layer forming step of forming a conductive layer on the insulating pattern and in the regions between the insulating patterns of the base material on which the insulating patterns are formed, to obtain a member A; and
a polishing step of polishing the member A to obtain a member having the conductive pattern and the insulating pattern exposed on a surface thereof;
The angle between the bottom surface of the conductive pattern of the member and the side surface of the conductive pattern is greater than 90° and is not greater than 110°.
Manufacturing method of components.
<9> Before the conductive layer forming step,
A film forming step including applying a composition for forming an insulating pattern onto the substrate to form a film,
The method for producing a member according to <8>, wherein the composition for forming an insulating pattern contains at least one compound selected from the group consisting of a photoradical generator and a photoacid generator.
<10> The method for producing a member according to <9>, wherein the insulating pattern-forming composition is heated at 100° C. for 3 minutes to form a 3 μm-thick film, which has an i-line transmittance of 5% or more.
<11> The method includes, after the film-forming step, a drying step of drying the film, an exposure step of exposing the dried film to light, and a development step of developing the exposed film with a developer,
The method for producing a member according to <9> or <10>, wherein the composition for forming an insulating pattern is applied to a silicon wafer, heated at 100° C. for 180 seconds, irradiated with i-rays at an exposure dose of 100 mJ/cm ² , and heated at 110° C. for 3 minutes. ...
<12> The method for producing a member according to any one of <9> to <11>, further comprising, after the film-forming step, a heating step of heating the film at two or more heating temperatures.
<13> A method for producing a member including a substrate, a first insulating pattern present on the substrate, a second insulating pattern present on at least a portion of a surface of the first insulating pattern, and a conductive pattern providing electrical continuity between an area between the first insulating pattern and an area between the second insulating pattern, the method comprising the steps of:
The method includes steps A to C,
a bottom surface of the conductive pattern of the component and a side surface of the conductive pattern form an angle greater than 90° and not greater than 110°.
<14> A photosensitive resin composition used for forming the insulating pattern in the production method according to any one of <8> to <12>.
<15> The photosensitive resin composition according to <14>, comprising a polyimide or a polyimide precursor.
<16> A semiconductor member comprising the member according to any one of <1> to <7>.

The present invention provides a member in which peeling of a conductive pattern is suppressed, a method for manufacturing the member, a photosensitive resin composition used in the method for manufacturing the member, and a semiconductor member including the member.

FIG. 1 is a schematic cross-sectional view showing an example of a first member of the present invention. 10 is a schematic cross-sectional view showing an example in which a conductive pattern is distorted. FIG. FIG. 2 is a schematic cross-sectional view showing an example of a second member of the present invention. 4A to 4C are process explanatory diagrams each showing, in cross section, a process of a method for producing a first member according to an embodiment of the present invention. 5A to 5C are process explanatory views each showing, in schematic cross-sectional views, a process (part) of a method for producing a second member according to an embodiment of the present invention. 5A to 5C are process explanatory diagrams each showing, in schematic cross-sectional views, a process (part) of the method for producing a second member according to one embodiment of the present invention (continuation of FIG. 5 ).

Hereinafter, the main embodiments of the present invention will be described, however, the present invention is not limited to the embodiments explicitly described.
In this specification, a numerical range expressed using the symbol "to" means a range that includes the numerical values before and after "to" as the lower limit and upper limit, respectively.
In this specification, the term "step" includes not only an independent step, but also a step that cannot be clearly distinguished from another step, so long as the intended effect of the step can be achieved.
In the description of groups (atomic groups) in this specification, when there is no indication of whether they are substituted or unsubstituted, the term encompasses both unsubstituted groups (atomic groups) and substituted groups (atomic groups). For example, an "alkyl group" encompasses not only alkyl groups that have no substituents (unsubstituted alkyl groups) but also alkyl groups that have substituents (substituted alkyl groups).
In this specification, unless otherwise specified, the term "exposure" includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams. Examples of light used for exposure include the bright line spectrum of a mercury lamp, far ultraviolet light represented by an excimer laser, extreme ultraviolet light (EUV light), X-rays, electron beams, and other actinic rays or radiation.
In this specification, "(meth)acrylate" means both or either of "acrylate" and "methacrylate", "(meth)acrylic" means both or either of "acrylic" and "methacrylic", and "(meth)acryloyl" means both or either of "acryloyl" and "methacryloyl".
In this specification, in the structural formulae, Me represents a methyl group, Et represents an ethyl group, Bu represents a butyl group, and Ph represents a phenyl group.
In this specification, the total solid content refers to the total mass of all components of the composition excluding the solvent, and in this specification, the solid content concentration refers to the mass percentage of the other components excluding the solvent with respect to the total mass of the composition.
In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are values measured using gel permeation chromatography (GPC) method, and are defined as polystyrene equivalent values, unless otherwise specified. In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be determined, for example, by using HLC-8220GPC (manufactured by Tosoh Corporation) and using guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (all manufactured by Tosoh Corporation) connected in series as columns. Unless otherwise specified, these molecular weights are measured using THF (tetrahydrofuran) as an eluent. However, when THF is not suitable as an eluent, such as when the solubility is low, NMP (N-methyl-2-pyrrolidone) can also be used. In addition, unless otherwise specified, detection in GPC measurement is performed using a UV (ultraviolet) light detector with a wavelength of 254 nm.
In this specification, when the positional relationship of each layer constituting the laminate is described as "upper" or "lower", it is sufficient that there is another layer above or below the reference layer among the multiple layers being noted. That is, a third layer or element may be interposed between the reference layer and the other layer, and the reference layer does not need to be in contact with the other layer. Unless otherwise specified, the direction in which the layers are stacked on the substrate is referred to as "upper", or, in the case of a resin composition layer, the direction from the substrate to the resin composition layer is referred to as "upper", and the opposite direction is referred to as "lower". Note that such a vertical direction is set for the convenience of this specification, and in an actual embodiment, the "upper" direction in this specification may be different from the vertical upward direction.
In this specification, unless otherwise specified, the composition may contain, as each component contained in the composition, two or more compounds corresponding to that component. Furthermore, unless otherwise specified, the content of each component in the composition means the total content of all compounds corresponding to that component.
In this specification, unless otherwise specified, the temperature is 23° C., the pressure is 101,325 Pa (1 atm), and the relative humidity is 50% RH.
As used herein, combinations of preferred aspects are more preferred aspects.

(Element)
A member according to a first aspect of the present invention (hereinafter also referred to as "first member") is a member having a substrate, an insulating pattern arranged on the substrate, and a conductive pattern existing between the insulating patterns, wherein the difference between the maximum and minimum distances from the substrate surface to the surface of the conductive pattern on the opposite side to the substrate in a direction perpendicular to the substrate surface is 500 nm or less, and the angle formed between a bottom surface of the conductive pattern and a side surface of the conductive pattern is greater than 90° and less than 110°.
A member according to a second aspect of the present invention (hereinafter also referred to as the "second member") comprises a substrate, a first insulating pattern present on the substrate, a second insulating pattern present on at least a portion of the surface of the first insulating pattern, and a conductive pattern that conducts (electrically connects) an area between the first insulating pattern and an area between the second insulating pattern, wherein the difference between the maximum and minimum distances from the substrate surface to the surface of the conductive pattern on the side opposite the substrate in a direction perpendicular to the substrate surface of the member is 500 nm or less, and the angle formed between the bottom surface of the conductive pattern and the side surface of the conductive pattern in the area between the patterns of the second insulating pattern is greater than 90° and less than 110°.

In order to make the difference between the maximum and minimum values 500 nm or less, it is necessary to polish the surface of the member.
Here, by setting the angle to exceed 90°, stress is less likely to be applied to the lower end of the conductive pattern when the surface of the member is polished, and peeling of the conductive pattern is suppressed.
Moreover, by setting the angle to 110° or less, it becomes possible to form a fine pattern.
Furthermore, when the angle exceeds 90°, the total area of the insulating pattern exposed on the polished surface is smaller than when the angle is equal to or smaller than 90° during polishing, which results in a reduction in the amount of polishing waste resulting from the insulating pattern during polishing, and suppresses the occurrence of scratches on the polished surface of the member.

Neither Patent Document 1 nor Non-Patent Document 1 describes or suggests that the angle between the bottom surface of the conductive pattern and the side surface of the conductive pattern is greater than 90° and less than 110°.
The first member of the present invention will now be described in detail.

<First Member>
The first member of the present invention has a substrate, an insulating pattern disposed on the substrate, and a conductive pattern present between the insulating patterns.

〔Base material〕
The substrate is not particularly limited, and may be a semiconductor production substrate such as silicon, silicon nitride, polysilicon, silicon oxide, or amorphous silicon, quartz, glass, an optical film, a ceramic material, a deposition film, a magnetic film, a reflective film, a metal substrate such as Ni, Cu, Cr, or Fe, paper, a SOG (Spin On Glass), a TFT (thin film transistor) array substrate, or an electrode plate for a plasma display panel (PDP). The substrate may have a layer such as an adhesion layer or an oxide layer made of hexamethyldisilazane (HMDS), a sealant (epoxy molding compound: EMC), or the like, provided on the surface.
The substrate may be in the form of a wafer or a panel.
In the present invention, a semiconductor substrate is particularly preferred, and a silicon substrate (silicon wafer) is more preferred.
The substrate may have an electronic circuit region including an electronic circuit. The electronic circuit may have an element such as a semiconductor. The electronic circuit is preferably electrically connected to the conductive pattern.

[Insulation pattern]
The insulating pattern preferably comprises polyimide or polybenzoxazole, and more preferably comprises polyimide.
The content of polyimide or polybenzoxazole (when two or more types are contained, the total content of these) is preferably 20 to 99.5 mass %, more preferably 30 to 99 mass %, further preferably 40 to 98 mass %, and particularly preferably 50 to 97 mass %, based on the total mass of the insulating pattern.
The cyclization rate (imidization rate) of the polyimide is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. The upper limit of the cyclization rate is not particularly limited, and may be 100% or less. The cyclization rate is measured by the method described below.
The insulating pattern is preferably a cured product of a photosensitive resin composition described below.
The insulating pattern may have other layers formed between the pattern and the substrate, but it is preferable that the insulating pattern is in contact with the substrate.

The insulating pattern is not particularly limited and may be a line and space pattern, a hole pattern, etc., but a hole pattern is preferable.
When the insulating pattern is a line and space pattern, the interval between the lines (space width) is preferably 0.1 to 10 μm, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 2 μm.
When the insulating pattern is a hole pattern, the diameter of the bottom surface of the hole pattern is preferably 0.1 to 10 μm, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 2 μm. When the shape of the bottom surface of the hole pattern is not circular, the above diameter is calculated as a circle-equivalent diameter. The circle-equivalent diameter is the diameter of a circle having the same area as the area of the bottom surface of the hole pattern.

The thickness of the insulating pattern is not particularly limited, but is preferably 100 nm or more, more preferably 300 nm or more, even more preferably 500 nm or more, and even more preferably 1 μm or more. There is no particular upper limit, but it is preferably 1 mm or less, more preferably 500 μm or less, and even more preferably 200 μm or less. The thickness of the film can be measured using a known film thickness measuring device.
In this specification, the thickness refers to the length in the direction perpendicular to the surface of the substrate.

The indentation elastic modulus of the insulating pattern is not particularly limited, but is preferably 6.0 GPa or less, more preferably 4 to 6 GPa, and even more preferably 4.5 to 5.5 GPa. The indentation elastic modulus can be measured by a nanoindentation test.

The insulating pattern preferably contains an ionic compound.
The content of the ionic compound is preferably 0.001 to 5 mass %, more preferably 0.01 to 3 mass %, and even more preferably 1 to 2 mass %, based on the total mass of the insulating pattern.
Examples of the ionic compound include a photoacid generator and a photobase generator, which will be described later.
The details of these compounds will be described later in the explanation of the photosensitive resin composition.

[Conductive Pattern]
The conductive patterns are present between the insulating patterns.
The conductive pattern is preferably a conductive pattern that fills the regions between the insulating patterns, where filling means filling the regions between the patterns so that no voids are formed in the regions between the patterns, and other layers such as a seed layer may be present in the regions between the patterns.

The conductive pattern preferably contains at least one metal selected from the group consisting of tin (Sn), gold (Au), silver (Ag), copper (Cu), aluminum (Al), tungsten (W), palladium (Pd), platinum (Pt), cobalt (Co), nickel (Ni), zinc (Zn), ruthenium (Ru), iridium (Ir), rhodium (Rh), lead (Pb), bismuth (Bi), and indium (In), more preferably contains at least one metal selected from the group consisting of copper, tin, and nickel, and even more preferably contains copper. In this specification, the inclusion of at least one of metal X or an alloy containing the metal is collectively referred to simply as "containing metal X". The alloy may contain elements other than those exemplified above. For example, the copper alloy may contain silicon atoms to form a Corson alloy. In addition, oxygen that is inevitably dissolved, organic residues of raw material compounds mixed during precipitation, etc. may be present.
The conductive pattern may be a wiring terminal including a plurality of different members.
Of these, the conductive pattern is preferably a pattern made of copper.

The conductive pattern is preferably a line and space pattern.
Furthermore, the conductive pattern is a line and space pattern, and the line width of the conductive pattern is preferably 0.1 μm or more and 10 μm or less, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 3 μm.

The conductive pattern may be in contact with the insulating pattern, or may further include a seed layer or the like between the conductive pattern and the insulating pattern.

[Seed Layer]
The first member of the present invention may further include a seed layer (a power supply layer for electrolytic copper plating).
A seed layer is preferably present between the insulating pattern and the conductive pattern.
The seed layer may be a layer made of a metal such as titanium, chromium, or nickel.

[Barrier Layer]
The first member of the present invention may further include a barrier layer.
The barrier layer is preferably present on the surface of the conductive pattern opposite the substrate.
The barrier layer may be a layer made of a metal such as nickel.

[Distance from the surface of the substrate to the surface of the conductive pattern opposite the substrate]
In the first member of the present invention, the difference between the maximum and minimum distances from the substrate surface to the surface of the conductive pattern opposite the substrate in a direction perpendicular to the substrate surface is 500 nm or less.
The difference between the maximum value and the minimum value is preferably 400 nm or less, and more preferably 300 nm or less.
FIG. 1 is a schematic cross-sectional view showing an example of a first member of the present invention.
In FIG. 1, an insulating pattern 102 is formed on a substrate 100, and a seed layer 104 and a conductive pattern 106 are formed in the regions between the insulating patterns 102.
Here, h1, h2, and h3 are examples of distances from the surface of the substrate to the surface of the conductive pattern on the opposite side to the substrate.
Of the distances h1, h2, h3, etc. from the surface of the substrate to the surface of the conductive pattern opposite the substrate, the difference between the minimum value and the maximum value is 500 nm or less.

[First pattern angle]
In the first member of the present invention, the angle between the bottom surface of the conductive pattern and the side surface of the conductive pattern (also referred to as the "first pattern angle") is greater than 90° and equal to or less than 110°.
The first pattern angle is preferably greater than 90° and equal to or less than 105°, and more preferably greater than 90° and equal to or less than 100°.
In FIG. 1, the angle indicated as θ is an example of a first pattern angle.
In the present invention, it is sufficient that at least one first pattern angle is greater than 90° and equal to or less than 110°, but it is preferable that the average value of all the first pattern angles is greater than 90° and equal to or less than 110°. In addition, it is also one of the preferred aspects of the present invention that all the first pattern angles are greater than 90° and equal to or less than 110°.
Here, when there is distortion in the side wall of the conductive pattern, the angle formed by a straight line connecting an end point of the bottom surface of the conductive pattern and an end point of the exposed portion on the opposite side of the conductive pattern to the substrate, and the bottom surface of the conductive pattern is defined as the first pattern angle.
FIG. 2 is a schematic cross-sectional view showing an example in which the conductive pattern is distorted.
In FIG. 2, the angle θ formed by a dashed line connecting an end point b of the bottom surface of the conductive pattern and an end point a of the exposed portion of the conductive pattern on the side opposite the substrate, and the bottom surface of the conductive pattern, is the first pattern angle.
The first pattern angle can be adjusted by setting the composition of the composition for forming an insulating pattern (type of resin, physical properties of the polymerizable compound) described below, exposure conditions such as the exposure amount, exposure time, and focus position in the exposure step, and the developer in the development step.

<Second Member>
A second member of the present invention is a member comprising a substrate, a first insulating pattern present on the substrate, a second insulating pattern present on at least a portion of the surface of the first insulating pattern, and a conductive pattern that conducts electricity between an area between the first insulating pattern and an area between the second insulating pattern, wherein the difference between the maximum and minimum distances from the substrate surface to the surface of the conductive pattern on the side opposite the substrate in a direction perpendicular to the substrate surface of the member is 500 nm or less, and the angle formed between a bottom surface of the conductive pattern and a side surface of the conductive pattern in the area between the patterns of the second insulating pattern is greater than 90° and less than 110°.

〔Base material〕
The substrate in the second member may be the same as the substrate in the first member described above, and the preferred embodiments are also the same.

[First insulation pattern]
The first insulating pattern preferably comprises polyimide or polybenzoxazole, and more preferably comprises polyimide.
The content of polyimide or polybenzoxazole (when two or more types are contained, the total content of these) is preferably 20 to 99.5 mass %, more preferably 30 to 99 mass %, even more preferably 40 to 98 mass %, and particularly preferably 50 to 97 mass %, relative to the total mass of the first insulating pattern.
The cyclization rate (imidization rate) of the polyimide is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. The upper limit of the cyclization rate is not particularly limited, and may be 100% or less. The cyclization rate is measured by the method described below.
The insulating pattern is preferably a cured product of a photosensitive resin composition described below.
The first insulating pattern is preferably a cured product of a first insulating pattern forming composition described below.
Furthermore, the first insulating pattern may have other layers formed between the pattern and the substrate, but it is preferable that the first insulating pattern is in contact with the substrate.

The first insulating pattern is not particularly limited and may be a line and space pattern, a hole pattern, etc., but is preferably a hole pattern.
When the first insulating pattern is a line and space pattern, the distance between the lines (space width) is preferably 0.1 to 10 μm, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 2 μm.
When the first insulating pattern is a hole pattern, the diameter of the bottom surface of the hole pattern is preferably 0.1 to 10 μm, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 2 μm. When the shape of the bottom surface of the hole pattern is not circular, the above diameter is calculated as a circle-equivalent diameter. The circle-equivalent diameter is the diameter of a circle having the same area as the area of the bottom surface of the hole pattern.

The thickness of the first insulating pattern is not particularly limited, but is preferably 100 nm or more, more preferably 300 nm or more, even more preferably 500 nm or more, and even more preferably 1 μm or more. There is no particular upper limit, but it is preferably 1 mm or less, more preferably 500 μm or less, and even more preferably 200 μm or less. The thickness of the film can be measured using a known film thickness measuring device.

The indentation elastic modulus of the first insulating pattern is not particularly limited, but is preferably 6.0 GPa or less, more preferably 4.0 to 6.0 GPa, and even more preferably 4.5 to 5.5 GPa. The indentation elastic modulus can be measured by a nanoindenter method.

[Second Insulation Pattern]
The second insulating pattern preferably contains polyimide or polybenzoxazole, and more preferably contains polyimide.
The content of polyimide or polybenzoxazole (when two or more types are contained, the total content of these) is preferably 20 to 99.5 mass %, more preferably 30 to 99 mass %, even more preferably 40 to 98 mass %, and particularly preferably 50 to 97 mass %, relative to the total mass of the second insulating pattern.
The cyclization rate (imidization rate) of the polyimide is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. The upper limit of the cyclization rate is not particularly limited, and may be 100% or less. The cyclization rate is measured by the method described below.
The insulating pattern is preferably a cured product of a photosensitive resin composition described below.
The second insulating pattern is preferably a cured product of a composition for forming a second insulating pattern described below.
The second insulating pattern is preferably in contact with the first insulating pattern, although other layers may be formed between this pattern and the first insulating pattern.
It is preferable that the first insulating pattern and the second insulating pattern differ in at least a portion of the pattern in the surface direction of the base material.

The second insulating pattern is not particularly limited and may be a line and space pattern, a hole pattern, etc., but is preferably a line and space pattern.
When the second insulating pattern is a line and space pattern, the distance between the lines (space width) is preferably 0.1 to 10 μm, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 3 μm.
When the pattern formed on the second insulating pattern is a hole pattern, the diameter of the bottom of the hole pattern is preferably 0.1 to 10 μm, more preferably 0.2 to 5 μm, and even more preferably 0.3 to 2 μm. When the shape of the bottom of the hole pattern is not circular, the diameter is calculated as the equivalent circle diameter. The equivalent circle diameter is the diameter of a circle having the same area as the area of the bottom of the hole pattern.

The thickness of the second insulating pattern is not particularly limited, but is preferably 100 nm or more, more preferably 300 nm or more, even more preferably 500 nm or more, and even more preferably 1 μm or more. There is no particular upper limit, but it is preferably 1 mm or less, more preferably 500 μm or less, and even more preferably 200 μm or less. The thickness of the film can be measured using a known film thickness measuring device.

The indentation elastic modulus of the second insulating pattern is not particularly limited, but is preferably 6.0 GPa or less, more preferably 4.0 to 6.0 GPa, and even more preferably 4.5 to 5.5 GPa.

[Conductive Pattern]
The conductive pattern provides electrical continuity between the region between the first insulating patterns and the region between the second insulating patterns.
The conductive pattern is preferably a conductive pattern that fills the area between the first insulating pattern and the area between the second insulating pattern, where filling means filling the area between the patterns so that no voids are formed in the area between the patterns, and another layer such as a seed layer may be present in the area between the patterns.
In addition, the conductive pattern may be divided into two conductive patterns, one filling the area between the first insulating patterns and the other filling the area between the second insulating patterns, and these may be in electrical contact with each other.

The preferred aspects of the conductive pattern are the same as those of the conductive pattern of the first member described above.

The conductive pattern may be in contact with the first insulating pattern, or may further include a seed layer or the like between the conductive pattern and the first insulating pattern.
The conductive pattern may be in contact with the second insulating pattern, or may further include a seed layer or the like between the conductive pattern and the second insulating pattern.

[Seed Layer]
The second member of the present invention may further include a seed layer.
The seed layer is preferably present at least one of between the first insulating pattern and the conductive pattern and between the second insulating pattern and the conductive pattern, and more preferably present in both.
The preferred aspects of the seed layer are the same as those of the seed layer of the first member described above.

[Barrier Layer]
The second member of the present invention may further include a barrier layer.
The barrier layer is preferably present on the surface of the conductive pattern opposite the substrate.
The preferred aspects of the barrier layer are the same as those of the barrier layer of the first member described above.

[Distance from the surface of the substrate to the surface of the conductive pattern opposite the substrate]
In the second member of the present invention, the difference between the maximum and minimum distances from the substrate surface to the surface of the conductive pattern opposite the substrate in a direction perpendicular to the substrate surface is 500 nm or less.
The difference between the maximum value and the minimum value is preferably 400 nm or less, and more preferably 300 nm or less.
FIG. 3 is a schematic cross-sectional view showing an example of the second member of the present invention.
3A shows a substrate 100 having an insulating pattern 114 and a conductive pattern 116 formed on a silicon wafer 112. A first insulating pattern 122 is formed on the substrate 100, a second insulating pattern 124 is formed on the first insulating pattern 122, and a conductive pattern 126 and a seed layer 128 that electrically connect the first insulating pattern 122 and the second insulating pattern 124 are formed in the regions between the first insulating pattern 122 and the second insulating pattern 124.
Here, h4, h5, and h6 are examples of distances from the surface of the substrate to the surface of the conductive pattern on the opposite side to the substrate.
Of the distances such as h4, h5, h6, etc. from the surface of the substrate to the surface of the conductive pattern opposite the substrate, the difference between the minimum and maximum values is 500 nm or less.

[Second Pattern Angle]
In the second member of the present invention, the angle between the bottom surface of the conductive pattern and the side surface of the conductive pattern (also referred to as the "second pattern angle") is greater than 90° and equal to or less than 110°.
The second pattern angle is preferably greater than 90° and equal to or less than 105°, and more preferably greater than 90° and equal to or less than 100°.
In Fig. 3(a), the angle indicated as θ is an example of the second pattern angle. The above θ is the angle between the bottom surface of the conductive pattern and the side surface of the conductive pattern. The dashed line in Fig. 3(a) is an extension line of the side surface of the conductive pattern, and the dashed line is an extension line of the bottom surface of the conductive pattern. The angle θ of the angle formed at the intersection of these is the second pattern angle.
FIG. 3( b ) is a diagram in which the hatching of each component of the conductive pattern shown at the far right of FIG. 3( a ) has been removed and the boundaries between the components have been drawn in gray to make it easier to confirm the dashed lines, dotted line, and θ.
In the present invention, it is sufficient that at least one second pattern angle is greater than 90° and equal to or less than 110°, but it is preferable that the average value of all the second pattern angles is greater than 90° and equal to or less than 110°. In addition, it is also one of the preferred aspects of the present invention that all the second pattern angles are greater than 90° and equal to or less than 110°.
Here, when the side wall of the conductive pattern is distorted, the angle between the end point of the bottom surface of the conductive pattern and the end point of the exposed portion of the conductive pattern on the side opposite to the substrate is defined as the second pattern angle, which is the same as the first pattern angle.
The second pattern angle can be adjusted by setting the composition of the second insulating pattern-forming composition (type of resin, physical properties of the polymerizable compound) described below, exposure conditions such as the exposure amount, exposure time, and focus position in the second exposure step, and the developer in the second development step.

(Method for manufacturing semiconductor member)
The semiconductor article of the present invention is a article including the first article or the second article of the present invention.
Examples of the semiconductor member include the semiconductor members shown in FIG. 4(c) or FIG. 6(c) described below, and semiconductor members in which one or more other members are mounted on these members.
That is, the semiconductor article of the present invention may be a member in which another member (such as a semiconductor chip) is further mounted on the first member or the second member.
Other semiconductor components include processors (CPUs), 1 GHz-112 GHz band serializers, logic, accelerators (IPUs, TPUs, etc.), graphic processing units, volatile memories such as DRAMs (Dynamic Random Access Memory) and SRAMs (Static Random Access Memory), non-volatile memories such as flash memories, RF chips, silicon photonics chips, MEMS (Micro Electro Mechanical Systems), sensor chips, and the like, and may be selected according to the application.
These semiconductor chips are preferably electrically connected to the conductive patterns on the component.

(Method of manufacturing components)
<Method of Manufacturing First Member>
A method for producing a member according to a first aspect of the present invention (also referred to as "first method for producing a member") is a method for producing a member having a base material, an insulating pattern arranged on the base material, and a conductive pattern present between the insulating patterns, the method comprising a conductive layer formation step of forming a conductive layer on the insulating pattern and in regions between the insulating patterns of the base material on which the insulating patterns are formed, to obtain member A, and a polishing step of polishing member A to obtain a member having the conductive pattern and the insulating pattern exposed on its surface, wherein an angle formed between a bottom surface of the conductive pattern of the member and a side surface of the conductive pattern is greater than 90° and is 110° or less.
According to the method for producing the first component of the present invention, the above-mentioned first component of the present invention is produced.
That is, the substrate, insulating pattern, conductive pattern, and the angle (first pattern angle) formed between the bottom surface of the conductive pattern of the component and the side surface of the conductive pattern in the manufactured component are as described above, and preferred aspects of these are also similar to the preferred aspects of these in the first component described above.
In addition, the method for producing the first member of the present invention preferably has a film formation step including applying a composition for forming an insulating pattern (hereinafter also simply referred to as a "resin composition") onto the substrate to form a film prior to the conductive layer formation step.
Furthermore, it is preferable that the method for producing the first member of the present invention includes, after the film-forming step, a drying step of drying the film, an exposure step of exposing the dried film to light, and a development step of developing the exposed film with a developer.
In addition, the method for producing the first member of the present invention preferably includes a heating step after the film forming step.

<Film formation process>
The method for producing the first member of the present invention preferably includes a film-forming step including applying a composition for forming an insulating pattern (hereinafter also simply referred to as a "resin composition") onto the substrate to form a film prior to the conductive layer-forming step.
In particular, the method for producing the first member of the present invention has a film-forming step including, prior to the conductive layer-forming step, applying a composition for forming an insulating pattern onto the substrate to form a film, and the composition for forming an insulating pattern preferably contains at least one compound selected from the group consisting of a photoradical generator and a photoacid generator. Details of these components will be described later.

The i-line transmittance of a film having a thickness of 3 μm formed by heating the composition for forming an insulating pattern at 100° C. for 3 minutes is preferably 5% or more, more preferably 10% or more, and even more preferably 20% or more.
The details of the composition for forming an insulating pattern will be described later.

The resin composition is preferably applied to a substrate by coating.
Specific examples of the means to be applied include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, slit coating, and inkjet methods. From the viewpoint of uniformity of the thickness of the film, spin coating, slit coating, spray coating, or inkjet methods are preferred, and from the viewpoint of uniformity of the thickness of the film and productivity, spin coating and slit coating are more preferred. A film of a desired thickness can be obtained by adjusting the solid content concentration and coating conditions of the resin composition according to the means to be applied. In addition, the coating method can be appropriately selected depending on the shape of the substrate, and if the substrate is a circular substrate such as a wafer, spin coating, spray coating, inkjet, etc. are preferred, and if the substrate is a rectangular substrate, slit coating, spray coating, inkjet, etc. are preferred. In the case of the spin coating method, for example, it can be applied for about 10 seconds to 3 minutes at a rotation speed of 500 to 3,500 rpm.
Alternatively, a coating film formed by applying the coating material to a temporary support in advance using the above-mentioned application method may be transferred onto the substrate.
As for the transfer method, the production methods described in paragraphs 0023 and 0036 to 0051 of JP-A No. 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can be suitably used.
Also, a process for removing excess film from the edge of the substrate may be performed, such as edge bead rinse (EBR) and back rinse.
A pre-wetting step may be employed in which various solvents are applied to the substrate before the resin composition is applied to the substrate to improve the wettability of the substrate, and then the resin composition is applied.

<Drying process>
After the film-forming step (layer-forming step), the above-mentioned film may be subjected to a step of drying the formed film (layer) (drying step) in order to remove the solvent.
That is, the method for producing the first member of the present invention may include a drying step of drying the film formed in the film forming step.
The drying step is preferably carried out after the film-forming step and before the exposure step.
The drying temperature of the film in the drying step is preferably 50 to 150° C., more preferably 70 to 130° C., and even more preferably 90 to 110° C. Drying may be performed under reduced pressure. The drying time is, for example, 30 seconds to 20 minutes, preferably 1 to 10 minutes, and more preferably 2 to 7 minutes.

<Exposure process>
The film may be subjected to an exposure step to selectively expose the film to light.
Selective exposure means that only a portion of the film is exposed, resulting in exposed and unexposed areas of the film.
The amount of exposure light is not particularly limited as long as it can cure the resin composition of the present invention, but is preferably 50 to 10,000 mJ/cm ² , and more preferably 200 to 8,000 mJ/cm ² , calculated as exposure energy at a wavelength of 365 nm.

The exposure wavelength can be appropriately set in the range of 190 to 1,000 nm, with 240 to 550 nm being preferred.

In terms of the light source, the exposure wavelength may be, for example, (1) semiconductor laser (wavelength 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.), (2) metal halide lamp, (3) high pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, and i-line), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), _F2 excimer laser (wavelength 157 nm), (5) extreme ultraviolet light; EUV (wavelength 13.6 nm), (6) electron beam, (7) second harmonic 532 nm, third harmonic 355 nm, etc. of YAG laser. In particular, exposure by a high pressure mercury lamp is preferred, and exposure by i-line is more preferred from the viewpoint of exposure sensitivity.
The exposure method is not particularly limited as long as it is a method that exposes at least a part of the film made of the resin composition of the present invention, and examples of the exposure method include exposure using a photomask and exposure by a laser direct imaging method.

<Post-exposure baking process>
The film may be subjected to a step of heating after exposure (post-exposure baking step).
That is, the method for producing a cured product of the present invention may include a post-exposure baking step of heating the film exposed in the exposure step.
The post-exposure baking step can be carried out after the exposure step and before the development step.
The heating temperature in the post-exposure baking step is preferably from 50°C to 160°C, and more preferably from 60°C to 120°C.
The heating time in the post-exposure baking step is preferably from 30 seconds to 300 minutes, and more preferably from 1 minute to 10 minutes.
The heating rate in the post-exposure heating step is preferably from 1 to 12° C./min, more preferably from 2 to 10° C./min, and even more preferably from 3 to 10° C./min, from the temperature at the start of heating to the maximum heating temperature.
The rate of temperature rise may be appropriately changed during heating.
The heating means in the post-exposure baking step is not particularly limited, and a known hot plate, oven, infrared heater, etc. can be used.
It is also preferable that the heating be performed in an atmosphere of low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon.

<Developing process>
After exposure, the film may be subjected to a development step in which the film is developed with a developer to form a pattern.
That is, the first member manufacturing method of the present invention may include a development step of developing the film exposed in the exposure step with a developer to form a pattern.
Development removes one of the exposed and unexposed areas of the film to form a pattern.
Here, development in which the non-exposed portion of the film is removed by the development process is called negative development, and development in which the exposed portion of the film is removed by the development process is called positive development.

[Developer]
The developer used in the development step may be an aqueous alkaline solution or a developer containing an organic solvent.

When the developer is an alkaline aqueous solution, examples of basic compounds that the alkaline aqueous solution may contain include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts. Preferred are TMAH (tetramethylammonium hydroxide), potassium hydroxide, sodium carbonate, sodium hydroxide, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-butylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethylammonium hydroxide, butyltrimethylammonium hydroxide, methyltriamylammonium hydroxide, dibutyldipentylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, trimethylphenylammonium hydroxide, trimethylbenzylammonium hydroxide, triethylbenzylammonium hydroxide, pyrrole, and piperidine, and more preferred is TMAH. The content of the basic compound in the developer is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass, and even more preferably 0.3 to 3% by mass, based on the total mass of the developer.

When the developer contains an organic solvent, the compounds described in paragraph 0387 of WO 2021/112189 can be used as the organic solvent. The contents of this specification are incorporated herein. In addition, examples of alcohols that are suitable include methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methyl isobutyl carbinol, and triethylene glycol, and examples of amides that are suitable include N-methylpyrrolidone, N-ethylpyrrolidone, and dimethylformamide.

When the developer contains an organic solvent, the organic solvent may be used alone or in combination of two or more. In the present invention, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, dimethylsulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, and dimethylsulfoxide is more preferred, and a developer containing cyclopentanone is particularly preferred.

When the developer contains an organic solvent, the content of the organic solvent relative to the total mass of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, and particularly preferably 90% by mass or more. The content may be 100% by mass.

When the developer contains an organic solvent, the developer may further contain at least one of a basic compound and a base generator. When at least one of the basic compound and the base generator in the developer permeates the pattern, the performance of the pattern, such as the breaking elongation, may be improved.

As the basic compound, from the viewpoint of reliability when it remains in the cured film (adhesion to a substrate when the cured product is further heated), an organic base is preferred.
As the basic compound, a basic compound having an amino group is preferable, and a primary amine, a secondary amine, a tertiary amine, an ammonium salt, a tertiary amide, or the like is preferable. In order to promote the imidization reaction, a primary amine, a secondary amine, a tertiary amine, or an ammonium salt is preferable, a secondary amine, a tertiary amine, or an ammonium salt is more preferable, a secondary amine or a tertiary amine is even more preferable, and a tertiary amine is particularly preferable.
From the viewpoint of the mechanical properties (elongation at break) of the cured product, it is preferable for the basic compound to be one that is unlikely to remain in the cured film (obtained cured product), and from the viewpoint of promoting cyclization, it is preferable for the basic compound to be one that is unlikely to decrease in the amount remaining before heating due to vaporization, etc.
Therefore, the boiling point of the basic compound is preferably 30°C to 350°C, more preferably 80°C to 270°C, and even more preferably 100°C to 230°C at normal pressure (101,325 Pa).
The boiling point of the basic compound is preferably higher than the temperature obtained by subtracting 20° C. from the boiling point of the organic solvent contained in the developer, and more preferably higher than the boiling point of the organic solvent contained in the developer.
For example, when the boiling point of the organic solvent is 100° C., the basic compound used preferably has a boiling point of 80° C. or higher, and more preferably has a boiling point of 100° C. or higher.
The developer may contain only one kind of basic compound, or may contain two or more kinds of basic compounds.

Specific examples of basic compounds include ethanolamine, diethanolamine, triethanolamine, ethylamine, diethylamine, triethylamine, hexylamine, dodecylamine, cyclohexylamine, cyclohexylmethylamine, cyclohexyldimethylamine, aniline, N-methylaniline, N,N-dimethylaniline, diphenylamine, pyridine, butylamine, isobutylamine, dibutylamine, tributylamine, dicyclohexylamine, DBU (diazabicycloundecene), DABCO (1,4-diazabicyclo[2.2.2]octane), N,N-diisopropylethylamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, ethylenediamine, butanediamine, 1,5-diamino Examples include pentane, N-methylhexylamine, N-methyldicyclohexylamine, trioctylamine, N-ethylethylenediamine, N,N-diethylethylenediamine, N,N,N',N'-tetrabutyl-1,6-hexanediamine, spermidine, diaminocyclohexane, bis(2-methoxyethyl)amine, piperidine, methylpiperidine, dimethylpiperidine, piperazine, tropane, N-phenylbenzylamine, 1,2-dianilinoethane, 2-aminoethanol, toluidine, aminophenol, hexylaniline, phenylenediamine, phenylethylamine, dibenzylamine, pyrrole, N-methylpyrrole, N,N,N,N-tetramethylethylenediamine, and N,N,N,N-tetramethyl-1,3-propanediamine.

The preferred embodiment of the base generator is the same as the preferred embodiment of the base generator contained in the composition described above. In particular, it is preferred that the base generator is a thermal base generator.

When the developer contains at least one of a basic compound and a base generator, the content of the basic compound or the base generator is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the developer. The lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more.
When the basic compound or base generator is a solid in the environment in which the developer is used, the content of the basic compound or base generator is preferably 70 to 100% by mass based on the total solid content of the developer.
The developer may contain at least one of a basic compound and a base generator, or may contain two or more of them. When at least one of a basic compound and a base generator is two or more, the total amount of them is preferably within the above range.

The developer may further comprise other components.
Examples of other components include known surfactants and known defoamers.

[Method of Supplying Developer]
The method of supplying the developer is not particularly limited as long as it can form a desired pattern, and includes a method of immersing a substrate on which a film is formed in the developer, a paddle development method in which a developer is supplied to a film formed on a substrate using a nozzle, and a method of continuously supplying the developer. The type of nozzle is not particularly limited, and examples thereof include a straight nozzle, a shower nozzle, and a spray nozzle.
From the viewpoints of the permeability of the developer, the removability of non-image areas, and production efficiency, a method of supplying the developer through a straight nozzle or a method of continuously supplying the developer through a spray nozzle is preferred, and from the viewpoint of the permeability of the developer into the image areas, a method of supplying the developer through a spray nozzle is more preferred.
Alternatively, a process may be adopted in which the developer is continuously supplied through a straight nozzle, the substrate is spun to remove the developer from the substrate, and after spin drying, the developer is continuously supplied again through a straight nozzle, and the substrate is spun to remove the developer from the substrate. This process may be repeated multiple times.
Methods of supplying the developer in the development step include a step in which the developer is continuously supplied to the substrate, a step in which the developer is kept substantially stationary on the substrate, a step in which the developer is vibrated by ultrasonic waves or the like on the substrate, and a combination of these steps.

The development time is preferably 10 seconds to 10 minutes, and more preferably 20 seconds to 5 minutes. The temperature of the developer during development is not particularly specified, but is preferably 10 to 45°C, and more preferably 18°C to 30°C.

In the development process, after treatment with the developer, the pattern may be washed (rinsed) with a rinse solution. Also, a method may be adopted in which a rinse solution is supplied before the developer in contact with the pattern has completely dried.

Here, the composition for forming an insulating pattern is applied to a silicon wafer, heated at 100° C. for 180 seconds, irradiated with i-rays at an exposure dose of 100 mJ/ ^cm2 , and heated at 110° C. for 3 minutes. The swelling rate of the film in the developer is preferably 15 vol. % or less, more preferably 12 vol. % or less, and even more preferably 10 vol. % or less.

[Rinse solution]
When the developer is an alkaline aqueous solution, the rinse liquid may be, for example, water. When the developer is an organic solvent-containing developer, the rinse liquid may be, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer).

When the rinsing liquid contains an organic solvent, examples of the organic solvent include the same organic solvents as those exemplified when the developer contains an organic solvent.
The organic solvent contained in the rinse liquid is preferably different from the organic solvent contained in the developer, and more preferably has a lower solubility for the pattern than the organic solvent contained in the developer.

When the rinse solution contains an organic solvent, the organic solvent may be used alone or in combination of two or more. The organic solvent is preferably cyclopentanone, γ-butyrolactone, dimethylsulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, or PGME, more preferably cyclopentanone, γ-butyrolactone, dimethylsulfoxide, PGMEA, or PGME, and even more preferably cyclopentanone or PGMEA.

When the rinse solution contains an organic solvent, the organic solvent preferably accounts for 50% by mass or more, more preferably 70% by mass or more, and even more preferably 90% by mass or more, based on the total mass of the rinse solution. Furthermore, the organic solvent may account for 100% by mass, based on the total mass of the rinse solution.

The rinse liquid may contain at least one of a basic compound and a base generator.
Although not particularly limited, when the developer contains an organic solvent, an embodiment in which the rinsing liquid contains an organic solvent and at least one of a basic compound and a base generator is also one of the preferred embodiments of the present invention.
Examples of the basic compound and base generator contained in the rinse solution include the compounds exemplified as the basic compound and base generator that may be contained in the above-mentioned developer containing an organic solvent, and preferred embodiments thereof are also the same.
The basic compound and base generator contained in the rinse solution may be selected in consideration of the solubility in the solvent in the rinse solution.

When the rinse solution contains at least one of a basic compound and a base generator, the content of the basic compound or the base generator is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the rinse solution. The lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more.
When the basic compound or base generator is a solid in the environment in which the rinse liquid is used, the content of the basic compound or base generator is also preferably 70 to 100 mass % based on the total solid content of the rinse liquid.
When the rinse solution contains at least one of a basic compound and a base generator, the rinse solution may contain only one kind of at least one of the basic compound and the base generator, or may contain two or more kinds. When at least one of the basic compound and the base generator contains two or more kinds, the total amount thereof is preferably within the above range.

The rinse solution may further contain other ingredients.
Examples of other components include known surfactants and known defoamers.

[Method of Supplying Rinse Liquid]
The method of supplying the rinse liquid is not particularly limited as long as it can form a desired pattern, and examples of the method include a method of immersing the substrate in the rinse liquid, a method of supplying the rinse liquid to the substrate by puddling, a method of supplying the rinse liquid to the substrate by showering, and a method of continuously supplying the rinse liquid onto the substrate by means of a straight nozzle or the like.
From the viewpoints of the permeability of the rinse liquid, the removability of non-image areas, and production efficiency, the rinse liquid may be supplied using a shower nozzle, a straight nozzle, a spray nozzle, etc., and the method of continuously supplying the rinse liquid using a spray nozzle is preferred, while from the viewpoint of the permeability of the rinse liquid into the image areas, the method of supplying the rinse liquid using a spray nozzle is more preferred. The type of nozzle is not particularly limited, and examples thereof include a straight nozzle, a shower nozzle, a spray nozzle, etc.
That is, the rinsing step is preferably a step of supplying a rinsing liquid to the exposed film through a straight nozzle or continuously supplying the rinsing liquid to the exposed film, and more preferably a step of supplying the rinsing liquid through a spray nozzle.
The method of supplying the rinsing liquid in the rinsing step may be a step in which the rinsing liquid is continuously supplied to the substrate, a step in which the rinsing liquid is kept substantially stationary on the substrate, a step in which the rinsing liquid is vibrated on the substrate by ultrasonic waves or the like, or a combination of these steps.

The rinsing time is preferably 10 seconds to 10 minutes, and more preferably 20 seconds to 5 minutes. The temperature of the rinsing liquid during rinsing is not particularly specified, but is preferably 10 to 45°C, and more preferably 18°C to 30°C.

The development step may include a step of contacting the pattern with a processing liquid after treatment with a developer or after washing the pattern with a rinse liquid. Also, a method may be employed in which the processing liquid is supplied before the developer or rinse liquid in contact with the pattern is completely dried.

The treatment liquid includes a treatment liquid containing at least one of water and an organic solvent, and at least one of a basic compound and a base generator.
Preferred aspects of the above organic solvent, and at least one of the basic compound and the base generator are the same as the preferred aspects of the organic solvent, the basic compound, and the base generator used in the above-mentioned rinsing solution.
The method of supplying the processing liquid to the pattern can be the same as the above-mentioned method of supplying the rinsing liquid, and the preferred embodiments are also the same.

The content of the basic compound or base generator in the treatment liquid is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the treatment liquid. The lower limit of the content is not particularly limited, but is preferably, for example, 0.1% by mass or more.
In addition, when the basic compound or base generator is a solid in the environment in which the treatment liquid is used, the content of the basic compound or base generator is preferably 70 to 100 mass % based on the total solid content of the treatment liquid.
When the treatment liquid contains at least one of a basic compound and a base generator, the treatment liquid may contain only one kind of at least one of the basic compound and the base generator, or may contain two or more kinds. When at least one of the basic compound and the base generator contains two or more kinds, the total amount thereof is preferably within the above range.

<Heating process>
The pattern obtained by the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a heating step in which the pattern obtained by the development step is heated.
That is, the first member manufacturing method of the present invention may include a heating step of heating the pattern obtained in the development step.
In addition, the heating step may be carried out after the conductive layer forming step described below or after the polishing step described below, so long as it is carried out after the developing step, and the timing of carrying out the heating step is not particularly limited.
Furthermore, the method for producing the first member of the present invention may include a heating step of heating a pattern obtained by another method without performing a development step, or a film obtained in the film formation step.
In the heating step, the resin such as the polyimide precursor is cyclized to become a resin such as a polyimide.
Furthermore, crosslinking of unreacted crosslinkable groups in the specific resin or in the crosslinking agent other than the specific resin also proceeds.
The heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450°C, more preferably 150 to 350°C, further preferably 150 to 250°C, even more preferably 160 to 250°C, and particularly preferably 160 to 230°C.

The heating step is preferably a step in which the cyclization reaction of the polyimide precursor is promoted within the pattern by the action of the base generated from the base generator through heating.

The heating step is preferably performed at a temperature rise rate of 1 to 12° C./min from the starting temperature to the maximum heating temperature. The temperature rise rate is more preferably 2 to 10° C./min, and even more preferably 3 to 10° C./min. By setting the temperature rise rate at 1° C./min or more, it is possible to prevent excessive volatilization of the acid or solvent while ensuring productivity, and by setting the temperature rise rate at 12° C./min or less, it is possible to alleviate the residual stress of the cured product.
In addition, in the case of an oven capable of rapid heating, the temperature is increased from the starting temperature to the maximum heating temperature at a rate of preferably 1 to 8° C./sec, more preferably 2 to 7° C./sec, and even more preferably 3 to 6° C./sec.

The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and even more preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at which the process of heating to the maximum heating temperature begins. For example, when the resin composition of the present invention is applied to a substrate and then dried, it is the temperature of the film (layer) after drying, and it is preferable to raise the temperature from a temperature 30 to 200°C lower than the boiling point of the solvent contained in the resin composition.

The heating time (heating time at the maximum heating temperature) is preferably 5 to 360 minutes, more preferably 10 to 300 minutes, and even more preferably 15 to 240 minutes.

Heating may be performed at two or more heating temperatures. For example, a process may be performed in which the temperature is increased from 25°C to 150°C at 5°C/min, held at 150°C for 60 minutes, increased from 150°C to 230°C at 5°C/min, and held at 230°C for 120 minutes. It is also preferable to perform heat treatment while irradiating ultraviolet rays as described in U.S. Pat. No. 9,159,547. Such a pretreatment process can improve the properties of the film. The pretreatment process is preferably performed for a short time of about 10 seconds to 2 hours, more preferably 15 seconds to 30 minutes. The pretreatment process may be performed in two or more steps, for example, a first pretreatment process may be performed in the range of 100 to 150°C, and then a second pretreatment process may be performed in the range of 150 to 230°C.
Furthermore, after heating, the material may be cooled, and in this case, the cooling rate is preferably 1 to 5° C./min.

From the viewpoint of preventing decomposition of the specific resin, the heating step is preferably performed in an atmosphere with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon, or by performing the heating step under reduced pressure, etc. The oxygen concentration is preferably 50 ppm (volume ratio) or less, and more preferably 20 ppm (volume ratio) or less.
The heating means in the heating step is not particularly limited, but examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, and an infrared oven.

<Post-development exposure step>
The pattern obtained by the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a post-development exposure step in which the pattern after the development step is exposed to light instead of or in addition to the heating step.
That is, the method for producing the first member of the present invention may include a post-development exposure step of exposing the pattern obtained by the development step. The method for producing the first member of the present invention may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step.
In the post-development exposure step, for example, a reaction in which cyclization of a polyimide precursor or the like proceeds due to exposure of a photobase generator to light, or a reaction in which elimination of an acid-decomposable group proceeds due to exposure of a photoacid generator to light, can be promoted.
In the post-development exposure step, it is sufficient that at least a part of the pattern obtained in the development step is exposed, but it is preferable that the entire pattern is exposed.
The exposure dose in the post-development exposure step is preferably 50 to 20,000 mJ/cm ² , and more preferably 100 to 15,000 mJ/cm ² , calculated as exposure energy at a wavelength to which the photosensitive compound has sensitivity.
The post-development exposure step can be carried out, for example, using the light source in the exposure step described above, and it is preferable to use broadband light.

<Conductive Layer Forming Process>
The method for forming a first member of the present invention includes a conductive layer forming step of forming a conductive layer on the insulating patterns and in areas between the insulating patterns of a substrate on which the insulating patterns have been formed, to obtain member A.
In the conductive layer forming step, the conductive layer can be formed by plating, applying a conductive paste, or the like.
The maximum thickness of the conductive layer formed in the conductive layer forming step is not particularly limited, but is preferably 500 to 10,000 nm, and more preferably 1,000 to 5,000 nm.

The conductive layer formation process can be carried out, for example, by electrolytic copper plating. Here, it is also preferable to use filling plating to fill the areas between the insulating patterns. It may also be carried out by electroless copper plating. These methods can be carried out by known methods.

It is preferable that the conductive layer formed in the conductive layer forming step is present in the regions between the insulating patterns and on top of the insulating patterns, filling the regions between the insulating patterns and covering the insulating patterns.
It is not necessary that all the regions between the insulating patterns are filled with the conductive layer, and for example, the conductive layer may be formed along the inner walls (side and bottom surfaces) of these regions. In such an embodiment, the regions not filled with the conductive layer can be removed by polishing in a polishing step described later, or the surface of the member can be flattened by polishing after forming a barrier layer described later.

<Seed layer formation step>
It is preferable that the method for producing the first member of the present invention further includes a seed layer formation step, prior to the conductive layer formation step, of forming a seed layer (a power supply layer for electrolytic copper plating) in the area between the insulating patterns.
The seed layer forming step is preferably a step of forming a seed layer along the inner walls (side and bottom surfaces) of the regions between the insulating patterns.
In addition, in the seed layer forming step, a seed layer may also be formed on the insulating pattern. In such an embodiment, the seed layer can be removed by polishing in the polishing step described later to finally expose the insulating pattern.

The seed layer is formed by, for example, sputtering.
Specifically, a seed layer can be formed by using a metal such as titanium or chromium as a sputtering target and introducing oxygen, nitrogen, or the like as a reactive gas. These can be performed by a known method. In addition, other known methods for forming a seed layer may also be used.

The thickness of the seed layer is preferably from 20 to 400 nm, more preferably from 30 to 300 nm, and further preferably from 40 to 250 nm.
The seed layer may be formed of two or more layers. When the seed layer is formed of two or more layers, it is preferable that the thickness of each layer is within the above range.
For example, after forming a seed layer of titanium, chromium, nickel or the like as a first layer, a seed layer of a metal used for a conductive layer, such as copper, may be formed as a second layer by plating or the like.

<Polishing process>
The first method of producing a member of the present invention includes a polishing step of polishing member A to obtain a member having the conductive pattern and insulating pattern exposed on the surface.

The polishing step is a step of polishing member A to obtain a member in which the conductive pattern and the insulating pattern are exposed.
The polishing step removes the surface of the conductive layer to form a conductive pattern. In addition, if a seed layer is formed on the insulating pattern by the above-mentioned method, it is preferable that the seed layer on the insulating pattern is also removed.
The polishing may be performed by physical polishing such as cutting, mechanical polishing, grinding, plasma treatment, laser ablation, or the like, or is preferably performed by chemical polishing such as CMP (Chemical Mechanical Polishing), and is more preferably performed by CMP.
The slurry used in the above-mentioned CMP is not particularly limited, but can be silica slurry, ceria slurry, alumina slurry, titania slurry, zirconia slurry, germania slurry, manganese oxide slurry, diamond slurry, etc. The size of the particles of the slurry is not particularly limited, but from the viewpoint of scratch prevention, the average particle size is preferably 1000 nm or less, more preferably 500 nm or less, and even more preferably 200 nm or less. The lower limit of the particle size of the slurry is not particularly limited, but from the viewpoint of polishing rate, it is preferably 10 nm or more.
Moreover, these methods may be combined, for example, by performing CMP after cutting.

Commercially available silica slurries include, for example, NP6220, NP6502, NP6504, NP6610, NP6605, NP8020H, NP8020, NP8030, NP8040, NP8040W, and EG1103 (all manufactured by Nitta DuPont).

The content of particles such as silica, ceria, and alumina in the slurry is not particularly limited, but from the viewpoint of suppressing scratches and the like, the content is preferably 0.01 to 80 mass %, more preferably 0.1 to 70 mass %, and even more preferably 0.2 to 60 mass %, based on the total mass of the slurry.
In this specification, the content of each component in the slurry is described as the content of each component when the slurry is used for polishing. When the slurry is diluted with water or a solvent during polishing, the content is the content in the diluted composition.
In addition, as the particles, two kinds of particles having different materials or two kinds of particles having different particle diameters may be used in combination. In these cases, it is preferable that the total content of the particles contained satisfies the above numerical range.

〔Oxidant〕
The slurry also preferably contains an oxidizing agent, which acts on the surface of the insulating pattern, making the insulating pattern easier to remove, and is believed to increase the etching rate.
Examples of the oxidizing agent include hydrogen peroxide, peroxides, nitrates, iodates, periodates, hypochlorites, chlorites, chlorates, perchlorates, persulfates, dichromates, permanganates, ozone water, silver (II) salts, and iron (III) salts.

The amount of the oxidizing agent used is preferably 0.0001 to 20 mol, more preferably 0.001 to 15 mol, and even more preferably 0.001 to 10 mol per 1 L of the slurry when used.
Two or more kinds of oxidizing agents may be used in combination. In this case, it is preferable that the total content of the oxidizing agents contained falls within the above-mentioned numerical range.

[pH adjuster]
The slurry also preferably contains a pH adjuster.
By including a pH adjuster, the pH can be kept constant during polishing, and variations in polishing can be suppressed.
Examples of the pH adjuster include an acidic compound, an alkaline compound, a pH buffering agent, and the like, and it is preferable that the pH adjuster contains an alkaline compound.

As the acidic compound, an inorganic acid can be used. Examples of inorganic acids that can be used include, but are not limited to, sulfuric acid, nitric acid, boric acid, and phosphoric acid. Among these inorganic acids, sulfuric acid, nitric acid, and phosphoric acid are preferably used.

Examples of alkaline compounds include ammonium hydroxide, organic ammonium hydroxides such as tetramethylammonium hydroxide (TMAH) and tetrabutylammonium hydroxide (TMAH), ethylenediamine, butanediamine, 1,5-diaminopentane, N-methylhexylamine, N-methyldicyclohexylamine, trioctylamine, N-ethylethylenediamine, N,N-diethylethylenediamine, N,N,N',N'-tetrabutyl-1,6-hexanediamine, spermidine, diaminocyclohexane, bis(2- methoxyethyl)amine and other amine compounds, alkali metal hydroxides such as sodium hydroxide, potassium hydroxide, and lithium hydroxide, carbonates, phosphates, borates, tetraborates, hydroxybenzoates, glycyl salts, N,N-dimethylglycine salts, leucine salts, norleucine salts, guanine salts, 3,4-dihydroxyphenylalanine salts, alanine salts, aminobutyrate salts, 2-amino-2-methyl-1,3-propanediol salts, valine salts, proline salts, trishydroxyaminomethane salts, and lysine salts, but are not limited to these.

Examples of pH buffers include sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, trisodium phosphate, tripotassium phosphate, disodium phosphate, dipotassium phosphate, sodium borate, potassium borate, sodium tetraborate (borax), potassium tetraborate, sodium o-hydroxybenzoate (sodium salicylate), potassium o-hydroxybenzoate, sodium 5-sulfo-2-hydroxybenzoate (sodium 5-sulfosalicylate), potassium 5-sulfo-2-hydroxybenzoate (potassium 5-sulfosalicylate), and ammonium hydroxide. Other examples include amino acids and amino acid derivatives such as glycine, alanine, and N-methylglycine, and organic acids such as butyric acid and glycolic acid. However, usable pH buffers are not limited to these.

The amount of pH adjuster added is not particularly limited as long as it is an amount capable of adjusting the pH of the slurry to a target value, and the compound and the amount added may be appropriately adjusted depending on the purpose.
The pH can be selected arbitrarily, but in some cases it may be preferable to adjust the pH to the alkaline side, for example, pH 8 to 14, in terms of the polishing rate, etc.
It is also possible to prepare a slurry at a low pH, and the optimum pH can be appropriately selected taking into consideration the polishing rate and the antiseptic properties of the adjacent metal.

[Corrosion inhibitor]
The slurry also preferably contains a corrosion inhibitor.
By including a corrosion inhibitor, for example, it is possible to suppress corrosion of metal (for example, copper) in the conductive pattern.
Corrosion inhibitors include heteroaromatic ring compounds.
As the corrosion inhibitor, a compound that forms a passivation film on the metal surface to be polished is preferred.

A "heteroaromatic ring compound" is a compound having a ring structure containing one or more heteroatoms as ring members.
As the heteroatom, a nitrogen atom, a sulfur atom, an oxygen atom, a selenium atom, a tellurium atom, a phosphorus atom, a silicon atom or a boron atom is preferable, a nitrogen atom, a sulfur atom, an oxygen atom or a selenium atom is more preferable, a nitrogen atom, a sulfur atom or an oxygen atom is particularly preferable, and a nitrogen atom or a sulfur atom is most preferable.
The heteroaromatic ring compound is not particularly limited, but examples thereof include the compounds described in paragraphs 0027 to 0035 of JP-A-2009-224695.

The content of the corrosion inhibitor in 1 L of the slurry is preferably 0.0001 to 1.0 mol, more preferably 0.0005 to 0.5 mol, and even more preferably 0.0005 to 0.05 mol.
Two or more corrosion inhibitors may be used in combination. In this case, it is preferable that the total content of the corrosion inhibitors contained falls within the above numerical range.

[Other additives]
The above slurry may contain various known additives depending on the purpose.
Examples of known additives include, but are not limited to, surfactants, solvents, and chelating agents.

-Surfactants-
The slurry also preferably contains a surfactant.
The inclusion of a surfactant may have the effect of protecting the metal film and suppressing excessive polishing.
Examples of the surfactant include anionic, cationic, nonionic, and amphoteric (betaine) surfactants.
These surfactants are not particularly limited, but examples thereof include the compounds described in paragraphs 0038 to 0047 of JP-A-2009-224695.

The amount of the surfactant added is preferably 0.0001 to 10 g, more preferably 0.0005 to 5 g, and particularly preferably 0.0005 to 3 g, per liter of slurry.
Two or more surfactants may be used in combination. In this case, it is preferable that the total content of the surfactants contained falls within the above numerical range.

-solvent-
The slurry may include a solvent.
The solvent may be water, an organic solvent, or the like.
Examples of the organic solvent include polar solvents such as alcohol and acetic acid. For the purpose of improving the wettability to the surface to be polished and bringing the polishing speed of the interlayer insulating film and the barrier film closer to each other, examples of the organic solvent include glycols, glycol monoethers, glycol diethers, alcohols, carbonates, lactones, ethers, ketones, phenols, dimethylformamide, n-methylpyrrolidone, ethyl acetate, ethyl lactate, sulfolane, and sulfoxides. Among them, at least one selected from dimethyl sulfoxide, glycol monoethers, alcohols, and carbonates is preferable.

The solvent may be supplied during polishing or may be added to the slurry before polishing. The amount of the solvent used may be appropriately determined taking into consideration the state of the surface to be polished.
When an organic solvent is added, the content of the organic solvent is preferably 0.01 to 90 parts by mass relative to 100 parts by mass of the slurry during polishing. The content is more preferably 0.05 parts by mass or more, and even more preferably 0.1 parts by mass or more, in order to improve the wettability of the slurry to the substrate during polishing. The upper limit is more preferably 50 parts by mass or less, and even more preferably 10 parts by mass or less, in order to facilitate the manufacturing process.

The polishing should be performed to the extent that the portion of the conductive layer formed on the insulating pattern and the seed layer, if any, are removed to expose the conductive layer and the insulating pattern, but it may also be performed to the extent that the top surface of the insulating pattern is polished. This may improve the flatness of the component surface.

Here, for example with the above-mentioned seed layer, polishing may be performed in two stages.
Specifically, a method includes a first polishing step in which the conductive layer is removed by polishing down to the surface of the seed layer to expose the seed layer, and then a second polishing step in which the seed layer is removed to expose the insulating pattern.

The difference between the maximum and minimum distances from the substrate to the surface of the conductive pattern opposite the substrate after polishing is preferably 500 nm or less, more preferably 400 nm or less, and even more preferably 300 nm or less.

<Barrier layer forming step>
The method for producing the first member of the present invention preferably further comprises, after the polishing step, a barrier layer forming step of forming a barrier layer present on the conductive pattern.
A barrier layer is formed on the exposed surface of the conductive pattern exposed by the polishing process.
By forming the barrier layer, the metal constituting the conductive pattern is prevented from diffusing.
The material constituting the barrier layer is not particularly limited, and known materials can be used, such as SiN ₂ , TiN, a cobalt compound, and nickel.
The method for forming the barrier layer is not particularly limited, and any known method can be used, and the barrier layer can be formed by electroless plating or the like.
The thickness of the barrier layer is not particularly limited, but is preferably from 50 to 500 nm, more preferably from 100 to 400 nm, and even more preferably from 150 to 300 nm.

<Other processes>
The method for manufacturing the first member of the present invention may further include other steps known in the art.

<Example of Manufacturing Method of First Member>
An example of the manufacturing method of the first member of the present invention will be described below with reference to the drawings. In each drawing, duplicated reference symbols that have already been explained may be omitted. Also, the dimensional ratios of each member in the drawings may not be accurate.
FIG. 4 is a process explanatory diagram showing, in schematic cross-sectional views, the process of the method for producing the first member according to one embodiment of the present invention.
4A shows a state in which insulating patterns 102 are formed on a substrate 100. The insulating patterns 102 have regions 103 between the insulating patterns.
Fig. 4(b) shows a state in which a seed layer 104 and a conductive layer 105 are formed in the region 103 between the insulating patterns and on the insulating pattern 102 in Fig. 4(a). Fig. 4(b) shows an example corresponding to the above-mentioned member A.
FIG. 4C shows a state in which the member A shown in FIG. 4B has been polished to form an insulating pattern 102 and a conductive pattern 106 .
Moreover, for the member shown in FIG. 4C, a barrier layer may be further formed on the conductive pattern 106.

<Method of manufacturing second member>
A method for producing a member according to a second aspect of the present invention (also referred to as a "second method for producing a member") is a method for producing a member comprising a substrate, a first insulating pattern present on the substrate, a second insulating pattern present on at least a portion of a surface of the first insulating pattern, and a conductive pattern providing electrical conductivity between an area between the first insulating pattern and an area between the second insulating pattern, the method comprising steps A to C, wherein an angle formed between a bottom surface of the conductive pattern of the member and a side surface of the conductive pattern is greater than 90° and is 110° or less.
Step A: a preparation step of preparing member A including the first insulating pattern and the second insulating pattern; Step B: a conductive layer formation step of forming a conductive layer in the areas between the first insulating patterns of member A, the areas between the second insulating patterns, and on the second insulating pattern to obtain member B; Step C: a polishing step of polishing member B to obtain a member in which the conductive patterns and the second insulating pattern are exposed. According to the method for producing the second member of the present invention, the above-mentioned second member of the present invention is produced.
That is, the substrate, the first insulating pattern, the second insulating pattern, the conductive pattern, and the angle (first pattern angle) between the bottom surface of the conductive pattern of the member and the side surface of the conductive pattern in the manufactured member are as described above, and preferred aspects of these are also similar to the preferred aspects of these in the above-mentioned second member.

<Step A>
The method for producing the second member of the present invention includes a preparation step (step A) of preparing a member A including the first insulating pattern and the second insulating pattern.
In the preparation step, the member A may be manufactured by a known method, or may be obtained by means of purchase or the like.
A manufacturing method for manufacturing the member A will be described below.

The method for producing member A preferably includes a first film formation step of applying a photosensitive resin composition (a composition for forming a first insulating pattern) to a substrate to form a film, a first exposure step of selectively exposing the film formed by the first film formation step, a first development step of developing the film exposed by the first exposure step with a developer to form a first insulating pattern, a second film formation step of applying a photosensitive resin composition (a composition for forming a second insulating pattern) to the first insulating pattern to form a film, a second exposure step of selectively exposing the film formed by the second film formation step, and a second development step of developing the film exposed by the second exposure step with a developer to form a second insulating pattern.
In addition, the manufacturing method of component A may include forming a first insulating pattern by etching or the like instead of the first exposure step and the first development step, and may include forming a second insulating pattern by etching or the like instead of the second exposure step and the second development step.
Each step will be described in detail below.
The details of each photosensitive resin composition (hereinafter, simply referred to as "resin composition") will be described later.

[First film formation step]
The method for producing a cured product of the present invention preferably includes a first film-forming step of applying a photosensitive resin composition to a substrate to form a film.
The substrate in the first film-forming step is as described above.

The resin composition can be applied by the same means as in the film formation step in the first method of manufacturing the component of the present invention described above, and the preferred embodiments are also the same.

[First Exposure Step]
The film formed in the first film-forming step may be subjected to a first exposure step in which the film is selectively exposed to light.
The first exposure step can be carried out in the same manner as the exposure step in the above-mentioned first member manufacturing method of the present invention, and the preferred embodiments are also the same.

[First post-exposure baking step]
The film may be subjected to a post-exposure baking step (first post-exposure baking step).
The first post-exposure baking step can be carried out in the same manner as the post-exposure baking step in the above-mentioned first member production method of the present invention, and the preferred embodiments are also the same.

[First development step]
The film after exposure may be subjected to a first development step in which the film is developed with a developer to form a pattern.
The first developing step can be carried out in the same manner as the developing step in the above-mentioned first method for producing a member of the present invention, and the preferred embodiments are also the same.

[First heating step]
The film after development may be subjected to a first heating step to heat the film.
The first heating step can be carried out in the same manner as the heating step in the above-mentioned first method for producing a member of the present invention, and the preferred aspects are also the same.
Alternatively, heating may not be performed at this stage, and after a second insulating pattern, which will be described later, is formed, the first insulating pattern and the second insulating pattern may be heated together.
This heating may be carried out before the polishing step after the conductive layer forming step, or after the polishing step.

[First post-treatment step]
After the first development step, a first post-treatment step may be carried out in which post-treatment is carried out by at least one of heating and exposure.
The heating temperature is preferably from 100 to 160°C, and more preferably from 120 to 160°C.
The exposure may be performed by a method similar to that of the above-mentioned exposure step, in which the entire surface is exposed with an exposure dose of 1,000 to 50,000 mJ/cm ² .

[Second film formation process]
The method for producing the member A preferably includes a second film-forming step of applying a photosensitive resin composition to the first insulating pattern to form a film.
The second film-forming step can be carried out in the same manner as the first film-forming step described above, except that the photosensitive resin composition is applied to the first insulating pattern instead of the substrate, and the preferred aspects are also the same.

[Second Exposure Step, Second Development Step]
The second exposure step and the second development step can be carried out in the same manner as the first exposure step and the first development step, and the preferred aspects are also the same.
Furthermore, after the second exposure step, a second post-exposure baking step may be included which is carried out in the same manner as the above-mentioned first post-exposure baking step.
Furthermore, after the second development step, a second post-treatment step may be included which is carried out in the same manner as the first post-treatment step described above.

[Second heating step]
The film after development may be subjected to a second heating step to heat the film.
The second heating step can be carried out in the same manner as the heating step in the above-mentioned first method for producing a member of the present invention, and the preferred embodiments are also the same.
Alternatively, heating may not be performed at this stage, and after a second insulating pattern, which will be described later, is formed, the first insulating pattern and the second insulating pattern may be heated together.
This heating may be carried out before the polishing step after the conductive layer forming step, or after the polishing step.

<Step B>
The method for producing the second member of the present invention includes, as step B, a conductive layer formation step of forming a conductive layer in the regions between the first insulating patterns of member A, the regions between the second insulating patterns, and on the second insulating pattern to obtain member B.
Step B can be carried out in the same manner as the conductive layer forming method in the above-mentioned first member producing method of the present invention, and the preferred embodiments are also the same.

<Seed layer formation step>
It is preferable that the method for manufacturing the second member of the present invention further includes, between step A and step B, a seed layer formation step of forming a seed layer present in the area between the first patterns and the area between the second patterns.
The seed layer forming step is preferably a step of forming a seed layer along the inner walls (side and bottom surfaces) of the region between the first patterns and the region between the second patterns.
In addition, in the seed layer forming step, a seed layer may also be formed on the second pattern. In such an embodiment, the seed layer can be removed by polishing in step C described below to finally expose the second insulating pattern.

The seed layer formation process can be performed in the same manner as the seed layer formation process in the first component manufacturing method of the present invention described above, and the preferred embodiments are also the same.

<Step C>
The method for producing the second member of the present invention includes, as step C, a polishing step of polishing the member B to obtain a member in which the conductive pattern and the second insulating pattern are exposed.
The polishing step removes the surface of the conductive layer to provide a conductive pattern. If a seed layer is formed by the above-mentioned method, it is preferable to remove the seed layer as well.
The polishing step can be carried out in the same manner as in the polishing step in the above-mentioned first method for producing a member of the present invention, and the preferred embodiments are also the same.

<Barrier layer forming step>
The method for producing the second member of the present invention preferably further comprises, after step C, a barrier layer forming step of forming a barrier layer present on the conductive pattern.
A barrier layer is formed on the exposed surface of the conductive pattern exposed by step C.
By forming the barrier layer, the metal constituting the conductive pattern is prevented from diffusing.
The barrier layer forming step can be carried out in the same manner as the polishing step in the above-mentioned first method of producing a member of the present invention, and the preferred aspects are also the same.

<Barrier Layer Polishing Step>
The second method of producing a member of the present invention may further include a barrier layer forming step of polishing the barrier layer.
The barrier layer polishing step is not particularly limited and can be performed by a known method, for example, the same method as in the above-mentioned step C.

<Other processes>
The method for producing the second member of the present invention may further include other steps known in the art.

<Example of Manufacturing Method of Second Member>
An example of the manufacturing method of the second member of the present invention will be described below with reference to the drawings. In each drawing, duplicated reference symbols that have already been explained may be omitted. Also, the dimensional ratios of each member in the drawings may not be accurate.
FIG. 5 is a process explanatory diagram showing, in schematic cross-sectional views, a process (part) of a method for producing a second member according to an embodiment of the present invention.
5A shows a substrate 1 having an insulating pattern 4 and a conductive pattern 6 formed on a silicon wafer 2. Such a substrate can be manufactured by a conventional method or can be obtained by purchase or the like.
FIG. 5( b ) shows a state in which a photosensitive resin composition used for forming a first insulating pattern is applied onto the substrate 1 to form a film 10 .
FIG. 5C shows a state in which the film 10 in FIG. 5B has been exposed and developed to form a hole pattern 12, resulting in a first insulating pattern 14 before hardening.
FIG. 5D shows a state in which a second photosensitive resin composition is applied onto the film 10 on which the hole pattern 12 has been formed, to form a film 20.
FIG. 5( e ) shows a state in which a line-and-space pattern (space portion) 22 is formed in film 20 so that the space portion is located over the hole pattern in film 10, forming a second insulating pattern before curing, and then heating changes the first insulating pattern before curing to first insulating pattern 16, and the second insulating pattern before curing to second insulating pattern 26.
Here, the member shown in FIG. 5( e ) corresponds to an example of member A in process A.

FIG. 6 is a process explanatory diagram showing, in schematic cross-sectional views, a process (part) of the method for producing a second member according to one embodiment of the present invention (continuation of FIG. 5).
FIG. 6A shows a state in which a seed layer 42 is formed so as to cover the first insulating pattern 16 and the second insulating pattern 26 (seed layer formation step).
FIG. 6B shows a state in which a conductive layer 44 has been formed on the seed layer 42 by copper plating (step B).
FIG. 6C shows a state in which the conductive layer 44 and the seed layer 42 have been removed by a polishing process, exposing the conductive pattern 46 and the second insulating pattern 26 (Step C).
The member shown in FIG. 6(c) corresponds to an example of the second member of the present invention.
Moreover, for the second member shown in FIG. 6C, a barrier layer may be further formed on the conductive pattern 46.

(Photosensitive resin composition)
The photosensitive resin composition used to form the insulating pattern in the method for producing the first member of the present invention (composition for forming an insulating pattern), the photosensitive resin composition used to form the first insulating pattern in the method for producing the first member (composition for forming a first insulating pattern), and the photosensitive resin composition used to form the second insulating pattern (composition for forming a second insulating pattern) will be described in detail below. These three are collectively referred to simply as "photosensitive resin composition".
The first insulating pattern forming composition and the second insulating pattern forming composition may be compositions having the same composition, or may be compositions having different compositions.
The photosensitive resin composition of the present invention is a photosensitive resin composition used for forming an insulating pattern used in the method for producing the first member of the present invention.
Each component contained in the photosensitive resin composition of the present invention will be described in detail below.

<Specific resin>
The resin composition of the present invention preferably contains at least one resin (specific resin) selected from the group consisting of cyclized resins and precursors thereof.
The cyclized resin is preferably a resin containing an imide ring structure or an oxazole ring structure in the main chain structure.
In the present invention, the term "main chain" refers to the relatively longest bonding chain in a resin molecule, and the term "side chain" refers to any other bonding chain.
Examples of the cyclized resin include polyimide, polybenzoxazole, and polyamideimide.
The precursor of a cyclized resin refers to a resin that undergoes a change in chemical structure due to an external stimulus to become a cyclized resin. A resin that undergoes a change in chemical structure due to heat to become a cyclized resin is preferred, and a resin that undergoes a ring-closing reaction due to heat to form a ring structure to become a cyclized resin is more preferred.
Examples of the precursor of the cyclized resin include a polyimide precursor, a polybenzoxazole precursor, and a polyamideimide precursor.
That is, the resin composition preferably contains, as the specific resin, at least one resin selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, and polyamideimide precursor.
The resin composition preferably contains a polyimide or a polyimide precursor as the specific resin.
The specific resin preferably has a polymerizable group, and more preferably contains a radically polymerizable group.
When the specific resin has a radical polymerizable group, the resin composition of the present invention preferably contains a radical polymerization initiator, more preferably contains a radical polymerization initiator and a radical crosslinking agent. If necessary, it can further contain a sensitizer. For example, a negative photosensitive film is formed from such a resin composition.
The specific resin may also have a polarity conversion group such as an acid-decomposable group.
When the specific resin has an acid-decomposable group, the resin composition preferably contains a photoacid generator. From such a resin composition, for example, a chemically amplified positive-type photosensitive film or negative-type photosensitive film is formed.

　式（２）中、Ａ^１及びＡ^２は、それぞれ独立に、酸素原子又は－ＮＲ^ｚ－を表し、Ｒ^１１１は、２価の有機基を表し、Ｒ^１１５は、４価の有機基を表し、Ｒ^１１３及びＲ^１１４は、それぞれ独立に、水素原子又は１価の有機基を表し、Ｒ^ｚは水素原子又は１価の有機基を表す。 [Polyimide precursor]
The polyimide precursor used in the present invention is not particularly limited in type, but preferably contains a repeating unit represented by the following formula (2).

In formula (2), ^A1 and ^A2 each independently represent an oxygen atom or ^-NRz- , ^R111 represents a divalent organic group, ^R115 represents a tetravalent organic group, ^R113 and ^R114 each independently represent a hydrogen atom or a monovalent organic group, and ^Rz represents a hydrogen atom or a monovalent organic group.

In formula (2), A ¹ and A ² each independently represent an oxygen atom or —NR ^z —, and preferably an oxygen atom.
^Rz represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom.
R ¹¹¹ in formula (2) represents a divalent organic group. Examples of the divalent organic group include a linear or branched aliphatic group, a cyclic aliphatic group, and a group containing an aromatic group. A linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a group consisting of a combination thereof is preferred, and a group containing an aromatic group having 6 to 20 carbon atoms is more preferred. The linear or branched aliphatic group may have a hydrocarbon group in the chain substituted with a group containing a heteroatom, and the cyclic aliphatic group and aromatic group may have a hydrocarbon group in the ring substituted with a group containing a heteroatom. Examples of R ¹¹¹ in formula (2) include groups represented by -Ar- and -Ar-L-Ar-, and a group represented by -Ar-L-Ar- is preferred. Here, each Ar is independently an aromatic group, and L is a single bond, an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S-, -SO ₂ - or -NHCO-, or a group consisting of a combination of two or more of the above. The preferred ranges of these are as described above.

R ¹¹¹ is preferably derived from a diamine. Examples of the diamine used in the production of the polyimide precursor include linear or branched aliphatic, cyclic aliphatic or aromatic diamines. Only one type of diamine may be used, or two or more types may be used.
Specifically, R ¹¹¹ is preferably a diamine containing a linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a group consisting of a combination thereof, and more preferably a diamine containing an aromatic group having 6 to 20 carbon atoms. The linear or branched aliphatic group may have a hydrocarbon group in the chain substituted with a group containing a hetero atom, and the cyclic aliphatic group and aromatic group may have a hydrocarbon group in the ring substituted with a group containing a hetero atom. Examples of groups containing an aromatic group include the following.

　式中、Ａは単結合又は２価の連結基を表し、単結合、又は、フッ素原子で置換されていてもよい炭素数１～１０の脂肪族炭化水素基、－Ｏ－、－Ｃ（＝Ｏ）－、－Ｓ－、－ＳＯ_２－、－ＮＨＣＯ－、又は、これらの組み合わせから選択される基であることが好ましく、単結合、又は、フッ素原子で置換されていてもよい炭素数１～３のアルキレン基、－Ｏ－、－Ｃ（＝Ｏ）－、－Ｓ－、若しくは、－ＳＯ_２－から選択される基であることがより好ましく、－ＣＨ_２－、－Ｏ－、－Ｓ－、－ＳＯ_２－、－Ｃ（ＣＦ_３）_２－、又は、－Ｃ（ＣＨ_３）_２－であることが更に好ましい。
　式中、＊は他の構造との結合部位を表す。

In the formula, A represents a single bond or a divalent linking group, and is preferably a single bond, an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C(=O)-, -S-, -SO ₂ -, -NHCO-, or a group selected from combinations thereof, more preferably a single bond, an alkylene group having 1 to 3 carbon atoms which may be substituted with a fluorine atom, -O-, -C(=O)-, -S-, or -SO ₂ -, and further preferably -CH ₂ -, -O-, -S-, -SO ₂ -, -C(CF ₃ ) ₂ -, or -C(CH ₃ ) ₂ -.
In the formula, * represents a bonding site with other structures.

Specific examples of diamines include 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, and 1,6-diaminohexane;
1,2- or 1,3-diaminocyclopentane, 1,2-, 1,3- or 1,4-diaminocyclohexane, 1,2-, 1,3- or 1,4-bis(aminomethyl)cyclohexane, bis-(4-aminocyclohexyl)methane, bis-(3-aminocyclohexyl)methane, 4,4'-diamino-3,3'-dimethylcyclohexylmethane, and isophoronediamine;
m- or p-phenylenediamine, diaminotoluene, 4,4'- or 3,3'-diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 4,4'- or 3,3'-diaminodiphenylmethane, 4,4'- or 3,3'-diaminodiphenyl sulfone, 4,4'- or 3,3'-diaminodiphenyl sulfide, 4,4'- or 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl phenyl, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(3-hydroxy-4-aminophenyl)propane, 2,2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(4-amino-3-hydroxyphenyl)sulfone, 4,4'-diaminoparaterphenyl , 4,4'-bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, bis[4-(2-aminophenoxy)phenyl]sulfone, 1,4-bis(4-aminophenoxy)benzene, 9,10-bis(4-aminophenyl)anthracene, 3,3'-dimethyl-4,4'-diaminodiphenylsulfone, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenyl)benzene, 3,3'-di Ethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminooctafluorobiphenyl, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 9,9-bis(4-aminophenyl)-10-hydroanthracene, 3,3',4,4'-tetraaminobiphenyl, 3,3',4,4'-tetraaminodiphenyl ether, 1,4-diaminoanthraquinone, 1,5-diaminoanthraquinone, 3,3-dihydro 4,4'-dimethyl-3,3'-diaminodiphenyl sulfone, 3,3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2,4- and 2,5-diaminocumene, 2,5-dimethyl-p-phenylenediamine, acetoguanamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,4,6-trimethyl-m-phenylenediamine, bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane , 2,7-diaminofluorene, 2,5-diaminopyridine, 1,2-bis(4-aminophenyl)ethane, diaminobenzanilide, esters of diaminobenzoic acid, 1,5-diaminonaphthalene, diaminobenzotrifluoride, 1,3-bis(4-aminophenyl)hexafluoropropane, 1,4-bis(4-aminophenyl)octafluorobutane, 1,5-bis(4-aminophenyl)decafluoropentane, 1,7-bis(4-aminophenyl)tetradecafluoroheptane, 2,2-bis[4-(3-aminophenoxy)phenyl]hexafluoropropane , 2,2-bis[4-(2-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-dimethylphenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-bis(trifluoromethyl)phenyl]hexafluoropropane, p-bis(4-amino-2-trifluoromethylphenoxy)benzene, 4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl, 4,4'-bis(4-amino-3-trifluoromethylphenoxy)biphenyl, 4,4'-bis(4 and at least one diamine selected from 3,3',5,5'-tetramethyl-4,4'-diaminobiphenyl, 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl, 2,2',5,5',6,6'-hexafluorotolidine, and 4,4'-diaminoquaterphenyl.

Also preferred are the diamines (DA-1) to (DA-18) described in paragraphs 0030 to 0031 of WO 2017/038598.

Also preferably used are diamines having two or more alkylene glycol units in the main chain, as described in paragraphs 0032 to 0034 of WO 2017/038598.

From the viewpoint of flexibility of the resulting organic film, R ¹¹¹ is preferably represented by -Ar-L-Ar-. Here, each Ar is independently an aromatic group, and L is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S-, -SO ₂ - or -NHCO-, or a group consisting of a combination of two or more of the above. Ar is preferably a phenylene group, and L is preferably an aliphatic hydrocarbon group having 1 or 2 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S- or -SO ₂ -. The aliphatic hydrocarbon group here is preferably an alkylene group.

From the viewpoint of i-line transmittance, R ¹¹¹ is preferably a divalent organic group represented by the following formula (51) or formula (61). In particular, from the viewpoints of i-line transmittance and ease of availability, R 111 is more preferably a divalent organic group represented by formula (61).
Equation (51)

In formula (51), R ⁵⁰ to R ⁵⁷ each independently represent a hydrogen atom, a fluorine atom, or a monovalent organic group, at least one of R ⁵⁰ to R ⁵⁷ represents a fluorine atom, a methyl group, or a trifluoromethyl group, and * each independently represents a bonding site with the nitrogen atom in formula (2).
Examples of the monovalent organic group for R ⁵⁰ to R ⁵⁷ include an unsubstituted alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms) and a fluorinated alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms).

In formula (61), R ⁵⁸ and R ⁵⁹ each independently represent a fluorine atom, a methyl group, or a trifluoromethyl group, and * each independently represents a bonding site to the nitrogen atom in formula (2).
Examples of diamines that give the structure of formula (51) or formula (61) include 2,2'-dimethylbenzidine, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc. These may be used alone or in combination of two or more.

Furthermore, R ¹¹¹ is also preferably a group represented by the following formula (71): In the above embodiment, R ¹¹¹ is more preferably a group represented by the following formula (72).

In formula (71), A ¹ to A ³ each independently represent a single bond or a divalent linking group, * represents a bonding site with the nitrogen atom in formula (2), and each of the four benzene rings described in formula (71) may have a substituent.
In formula (72), * represents a bonding site with the nitrogen atom in formula (2).

In formula (71), A ¹ to A ³ are preferably an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C(═O)-, -S-, -S(═O) ₂ -, -NHC(═O)-, or a group consisting of a combination of two or more of these, more preferably an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C(═O)-, or a group consisting of a combination of two or more of these, and further preferably an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom or -O-.
In particular, A ¹ and A ³ are preferably —O—.
In particular, ^A2 is preferably an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom.
Among these, an embodiment in which A ¹ and A ³ are —O— and A ² is —C(CH ₃ ) ₂ — is also one of the preferred embodiments of the present invention.
The number of carbon atoms in the aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom is not particularly limited, but is preferably 1 to 6, and more preferably 1 to 4.
Specific examples of the aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom include -CH ₂ -, -C(CH ₃ ) ₂ -, and -C(CF ₃ ) ₂ -, with -C(CH ₃ ) ₂ - being preferred.
Examples of the substituents on the four benzene rings shown in formula (71) include a fluorine atom and a hydrocarbon group having 1 to 10 carbon atoms in which a hydrogen atom may be substituted with a fluorine atom.
An embodiment in which all of the four benzene rings in formula (71) are unsubstituted is also one of the preferred embodiments of the present invention.

Furthermore, R ¹¹¹ is also preferably a group represented by the following formula (81): In the above embodiment, R ¹¹¹ is more preferably a group represented by the following formula (82).

In formula (81), ^A1 and ^A2 each independently represent a single bond or a divalent linking group, * represents a bonding site with the nitrogen atom in formula (2), and each of the three benzene rings described in formula (81) may have a substituent.
In formula (82), * represents a bonding site with the nitrogen atom in formula (2).

In formula (81), A ¹ and A ² are each preferably independently an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C(═O)-, -S-, -S(═O) ₂ -, -NHC(═O)-, or a group consisting of a combination of two or more of these, more preferably an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C(═O)-, or a group consisting of a combination of two or more of these, still more preferably an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom or -O-, and particularly preferably -C(CH ₃ ) ₂ -.

In formula (2), R ¹¹⁵ represents a tetravalent organic group. As the tetravalent organic group, a tetravalent organic group containing an aromatic ring is preferable, and a group represented by the following formula (5) or formula (6) is more preferable.
In formula (5) or (6), each * independently represents a bonding site to another structure.

In formula (5), R ¹¹² is a single bond or a divalent linking group, and is preferably a single bond, or an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S-, -SO ₂ -, -NHCO-, or a group selected from combinations thereof, more preferably a single bond, or an alkylene group having 1 to 3 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S-, and -SO ₂ -, and still more preferably a divalent group selected from the group consisting of -CH ₂ -, -C(CF ₃ ) ₂ -, -C(CH ₃ ) ₂ -, -O-, -CO-, -S-, and -SO ₂ -.

Furthermore, R ¹¹⁵ is also preferably a group represented by the following formula (7): In the above embodiment, R ¹¹⁵ is more preferably a group represented by the following formula (7-2).

In formula (7), A ¹ to A ³ each independently represent a single bond or a divalent linking group, * represents a bonding site with the carbonyl group in formula (2), and each of the four benzene rings described in formula (7) may have a substituent.
As used herein, a bond that crosses an edge of a ring structure is meant to replace any of the hydrogen atoms in that ring structure.
In formula (7-2), * represents a bonding site with the carbonyl group in formula (2).

In formula (7), preferred embodiments of A ¹ to A ³ and the substituent on the benzene ring are the same as the preferred embodiments of A ¹ to A ³ and the substituent on the benzene ring in formula (71) above.

Furthermore, R ¹¹⁵ is also preferably a group represented by the following formula (8): In the above embodiment, R ¹¹⁵ is more preferably a group represented by the following formula (8-2).

In formula (8), ^A4 and ^A5 each independently represent -C(=O)-O- or -C(=O)NH-; ^L1 represents a divalent linking group; * represents a bonding site with the carbonyl group in formula (2); and the two benzene rings described in formula (8) each may have a substituent.
An embodiment in which one of ^A4 and ^A5 is -C(=O)-O- and the other is -C(=O)NH- is also one of the preferred embodiments of the present invention.
Here, the orientation of the above-mentioned -C(=O)-O- is not particularly limited, but it is preferable that the carbon atom in -C(=O)-O- is bonded to ^L1 via a single bond without a linking group.
Although the orientation of the above-mentioned -C(=O)-NH- is not particularly limited, it is preferable that the carbon atom in -C(=O)-NH- is bonded to ^L1 via a single bond without a linking group.
L ¹ is preferably a hydrocarbon group which may have a substituent, more preferably an aromatic hydrocarbon group, and further preferably a phenylene group.
The hydrocarbon group in ^L1 may have a substituent. Examples of the substituent include a fluorine atom and a hydrocarbon group having 1 to 10 carbon atoms in which a hydrogen atom may be substituted with a fluorine atom.
In formula (8-2), R each independently represents a substituent, n is an integer of 0 to 4, and * represents a bonding site with the carbonyl group in formula (2).
Each R is preferably a fluorine atom or a hydrocarbon group having 1 to 10 carbon atoms in which a hydrogen atom may be substituted by a fluorine atom, and more preferably a hydrocarbon group having 1 to 10 carbon atoms in which a hydrogen atom may be substituted by a fluorine atom.
It is preferable that n is an integer of 0 to 2. Moreover, an embodiment in which n is 2 is also one of the preferable embodiments of the present invention.

　式（Ｏ）中、Ｒ^１１５は、４価の有機基を表す。Ｒ^１１５の好ましい範囲は式（２）におけるＲ^１１５と同義であり、好ましい範囲も同様である。 Specific examples of R ¹¹⁵ include tetracarboxylic acid residues remaining after removal of anhydride groups from tetracarboxylic dianhydride. The polyimide precursor may contain only one type of tetracarboxylic dianhydride residue or two or more types of tetracarboxylic dianhydride residues as the structure corresponding to R ¹¹⁵ .
The tetracarboxylic dianhydride is preferably represented by the following formula (O).

In formula (O), R ¹¹⁵ represents a tetravalent organic group. The preferred range of R ¹¹⁵ is the same as that of R ¹¹⁵ in formula (2), and the preferred range is also the same.

Specific examples of tetracarboxylic dianhydrides include pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyl tetracarboxylic dianhydride, 3,3',4,4'-diphenyl sulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenyl sulfone tetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 3,3',4,4'-diphenyl methane tetracarboxylic dianhydride, 2 ,2',3,3'-diphenylmethane tetracarboxylic dianhydride, 2,3,3',4'-biphenyl tetracarboxylic dianhydride, 2,3,3',4'-benzophenone tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,4,5,7-naphthalene tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2 ,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane-3,3,4,4-tetracarboxylic dianhydride, 1,4,5,6-naphthalenetetracarboxylic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride These include tetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,8,9,10-phenanthrenetetracarboxylic dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,2,3,4-benzenetetracarboxylic dianhydride, and their alkyl and alkoxy derivatives having 1 to 6 carbon atoms.

Furthermore, tetracarboxylic dianhydrides (DAA-1) to (DAA-5) described in paragraph 0038 of WO 2017/038598 are also preferred examples.

In the formula (2), at least one of R ¹¹¹ and R ¹¹⁵ may have an OH group. More specifically, R ¹¹¹ may be a residue of a bisaminophenol derivative.

R ¹¹³ and R ¹¹⁴ in formula (2) each independently represent a hydrogen atom or a monovalent organic group. The monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group. In addition, it is preferable that at least one of R ¹¹³ and R ¹¹⁴ contains a polymerizable group, and it is more preferable that both contain a polymerizable group. It is also preferable that at least one of R ¹¹³ and R ¹¹⁴ contains two or more polymerizable groups. The polymerizable group is a group capable of crosslinking by the action of heat, radicals, etc., and is preferably a radical polymerizable group. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. As the radical polymerizable group of the polyimide precursor, a group having an ethylenically unsaturated bond is preferable.
Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinylphenyl group), a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (III), and the group represented by the following formula (III) is preferred.

In formula (III), R ²⁰⁰ represents a hydrogen atom, a methyl group, an ethyl group or a methylol group, and is preferably a hydrogen atom or a methyl group.
In formula (III), * represents a bonding site with another structure.
In formula (III), R ²⁰¹ represents an alkylene group having 2 to 12 carbon atoms, —CH ₂ CH(OH)CH ₂ —, a cycloalkylene group or a polyalkyleneoxy group.
Suitable examples of R ²⁰¹ include alkylene groups such as ethylene group, propylene group, trimethylene group, tetramethylene group, pentamethylene group, hexamethylene group, octamethylene group, and dodecamethylene group, 1,2-butanediyl group, 1,3-butanediyl group, -CH ₂ CH(OH)CH ₂ -, and polyalkyleneoxy groups, of which alkylene groups such as ethylene group and propylene group, -CH ₂ CH(OH)CH ₂ -, cyclohexyl group, and polyalkyleneoxy groups are more preferred, and alkylene groups such as ethylene group and propylene group, or polyalkyleneoxy groups are even more preferred.
In the present invention, the polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded. The alkylene groups in the multiple alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different.
When the polyalkyleneoxy group contains multiple types of alkyleneoxy groups having different alkylene groups, the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement, an arrangement having blocks, or an arrangement having a pattern such as alternating.
The number of carbon atoms in the alkylene group (including the number of carbon atoms of the substituent, when the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, more preferably 2 to 6, even more preferably 2 to 5, still more preferably 2 to 4, still more preferably 2 or 3, and particularly preferably 2.
The alkylene group may have a substituent, and preferred examples of the substituent include an alkyl group, an aryl group, and a halogen atom.
The number of alkyleneoxy groups contained in the polyalkyleneoxy group (the number of repeating polyalkyleneoxy groups) is preferably 2-20, more preferably 2-10, and even more preferably 2-6.
As the polyalkyleneoxy group, from the viewpoint of solvent solubility and solvent resistance, polyethyleneoxy group, polypropyleneoxy group, polytrimethyleneoxy group, polytetramethyleneoxy group, or a group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded is preferred, polyethyleneoxy group or polypropyleneoxy group is more preferred, and polyethyleneoxy group is even more preferred.In the group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, the ethyleneoxy groups and the propyleneoxy groups may be arranged randomly, may be arranged in blocks, or may be arranged in a pattern such as alternating.The preferred embodiment of the number of repetitions of the ethyleneoxy group etc. in these groups is as described above.

In formula (2), when R ¹¹³ is a hydrogen atom or when R ¹¹⁴ is a hydrogen atom, the polyimide precursor may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond. An example of such a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.

In formula (2), at least one of R ¹¹³ and R ¹¹⁴ may be a polarity conversion group such as an acid-decomposable group. The acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxy group, but an acetal group, a ketal group, a silyl group, a silyl ether group, a tertiary alkyl ester group, etc. are preferred, and from the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferred.
Specific examples of the acid-decomposable group include a tert-butoxycarbonyl group, an isopropoxycarbonyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, an ethoxyethyl group, a methoxyethyl group, an ethoxymethyl group, a trimethylsilyl group, a tert-butoxycarbonylmethyl group, a trimethylsilyl ether group, etc. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.

It is also preferable that the polyimide precursor has fluorine atoms in its structure. The fluorine atom content in the polyimide precursor is preferably 10% by mass or more, and 20% by mass or less.

In order to improve adhesion to the substrate, the polyimide precursor may be copolymerized with an aliphatic group having a siloxane structure. Specific examples include those using bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. as the diamine.

　式（２－Ａ）中、Ａ^１及びＡ^２は、酸素原子を表し、Ｒ^１１１及びＲ^１１２は、それぞれ独立に、２価の有機基を表し、Ｒ^１１３及びＲ^１１４は、それぞれ独立に、水素原子又は１価の有機基を表し、Ｒ^１１３及びＲ^１１４の少なくとも一方は、重合性基を含む基であり、両方が重合性基を含む基であることが好ましい。 The repeating unit represented by formula (2) is preferably a repeating unit represented by formula (2-A). That is, at least one of the polyimide precursors used in the present invention is preferably a precursor having a repeating unit represented by formula (2-A). By including the repeating unit represented by formula (2-A) in the polyimide precursor, it becomes possible to further widen the width of the exposure latitude.
Formula (2-A)

In formula (2-A), A ¹ and A ² represent an oxygen atom, R ¹¹¹ and R ¹¹² each independently represent a divalent organic group, R ¹¹³ and R ¹¹⁴ each independently represent a hydrogen atom or a monovalent organic group, and at least one of R ¹¹³ and R ¹¹⁴ is a group containing a polymerizable group, and it is preferable that both are groups containing a polymerizable group.

A ¹ , A ² , R ¹¹¹ , R ¹¹³ and R ¹¹⁴ each independently have the same meaning as A ¹ , A ² , R ¹¹¹ , R ¹¹³ and R ¹¹⁴ in formula (2), and the preferred range is also the same. R ¹¹² has the same meaning as R ¹¹² in formula (5), and the preferred range is also the same.

The polyimide precursor may contain one type of repeating unit represented by formula (2), or may contain two or more types. It may also contain a structural isomer of the repeating unit represented by formula (2). The polyimide precursor may contain other types of repeating units in addition to the repeating unit of formula (2).

One embodiment of the polyimide precursor of the present invention is one in which the content of the repeating unit represented by formula (2) is 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. There is no particular upper limit to the total content, and all repeating units in the polyimide precursor except for the terminals may be repeating units represented by formula (2).

The weight average molecular weight (Mw) of the polyimide precursor is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, and even more preferably 15,000 to 40,000. The number average molecular weight (Mn) of the polyimide precursor is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, and even more preferably 4,000 to 20,000.
The polyimide precursor has a molecular weight dispersity of preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the polyimide precursor is not particularly limited, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
In this specification, the dispersity of molecular weight is a value calculated by weight average molecular weight/number average molecular weight.
When the resin composition contains multiple polyimide precursors as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one polyimide precursor are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polyimide precursors as one resin are each within the above ranges.

[Polyimide]
The polyimide used in the present invention may be an alkali-soluble polyimide, or may be a polyimide that is soluble in a developer containing an organic solvent as a main component.
In this specification, the alkali-soluble polyimide refers to a polyimide that dissolves at 0.1 g or more in 100 g of a 2.38 mass % aqueous tetramethylammonium solution at 23° C., and from the viewpoint of pattern formability, a polyimide that dissolves at 0.5 g or more is preferable, and a polyimide that dissolves at 1.0 g or more is more preferable. The upper limit of the dissolution amount is not particularly limited, but it is preferably 100 g or less.
From the viewpoint of the film strength and insulating properties of the resulting organic film, the polyimide is preferably a polyimide having a plurality of imide structures in the main chain.

-Fluorine atom-
From the viewpoint of the film strength of the resulting organic film, it is also preferable that the polyimide contains fluorine atoms.
The fluorine atom is preferably contained, for example, in R ¹³² in the repeating unit represented by formula (4) described later or in R ¹³¹ in the repeating unit represented by formula (4) described later, and more preferably contained as a fluorinated alkyl group in R ¹³² in the repeating unit represented by formula (4) described later or in R ¹³¹ in the repeating unit represented by formula (4) described later.
The amount of fluorine atoms relative to the total mass of the polyimide is preferably 5% by mass or more and 20% by mass or less.

-Silicon atom-
From the viewpoint of the film strength of the resulting organic film, it is also preferable that the polyimide contains a silicon atom.
The silicon atom is preferably contained in R ¹³¹ in the repeating unit represented by formula (4) described later, and more preferably contained in R ¹³¹ in the repeating unit represented by formula (4) described later as an organically modified (poly)siloxane structure described later.
The silicon atom or the organic modified (poly)siloxane structure may be contained in a side chain of the polyimide, but is preferably contained in the main chain of the polyimide.
The amount of silicon atoms relative to the total mass of the polyimide is preferably 1 mass % or more, and more preferably 20 mass % or less.

- Ethylenically unsaturated bond -
From the viewpoint of the film strength of the resulting organic film, the polyimide preferably has an ethylenically unsaturated bond.
The polyimide may have an ethylenically unsaturated bond at the end of the main chain or in a side chain, but preferably in the side chain.
The ethylenically unsaturated bond is preferably radically polymerizable.
The ethylenically unsaturated bond is preferably contained in R ¹³² or R ¹³¹ in the repeating unit represented by formula (4) described below, and more preferably contained in R ¹³² or R ¹³¹ as a group having an ethylenically unsaturated bond.
Among these, the ethylenically unsaturated bond is preferably contained in R ¹³¹ in the repeating unit represented by formula (4) described below, and more preferably contained in R ¹³¹ as a group having an ethylenically unsaturated bond.
Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, a group having an optionally substituted vinyl group directly bonded to an aromatic ring such as a vinylphenyl group, a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (IV).

In formula (IV), R ²⁰ represents a hydrogen atom, a methyl group, an ethyl group or a methylol group, and is preferably a hydrogen atom or a methyl group.

In formula (IV), R ²¹ represents an alkylene group having 2 to 12 carbon atoms, -O-CH ₂ CH(OH)CH ₂ -, -C(═O)O-, -O(C═O)NH-, a (poly)alkyleneoxy group having 2 to 30 carbon atoms (the number of carbon atoms in the alkylene group is preferably 2 to 12, more preferably 2 to 6, and particularly preferably 2 or 3; the number of repetitions in the alkyleneoxy group is preferably 1 to 12, more preferably 1 to 6, and particularly preferably 1 to 3), or a group consisting of a combination of two or more of these.
The alkylene group having 2 to 12 carbon atoms may be any of linear, branched, and cyclic alkylene groups, and alkylene groups represented by a combination thereof.
The alkylene group having 2 to 12 carbon atoms is preferably an alkylene group having 2 to 8 carbon atoms, and more preferably an alkylene group having 2 to 4 carbon atoms.

　式（Ｒ１）～（Ｒ３）中、Ｌは単結合、又は、炭素数２～１２のアルキレン基、炭素数２～３０の（ポリ）アルキレンオキシ基若しくはこれらを２以上結合した基を表し、Ｘは酸素原子又は硫黄原子を表し、＊は他の構造との結合部位を表し、●は式（ＩＶ）中のＲ^２１が結合する酸素原子との結合部位を表す。
　式（Ｒ１）～（Ｒ３）中、Ｌとしての炭素数２～１２のアルキレン基、又は、炭素数２～３０の（ポリ）アルキレンオキシ基の好ましい態様は、式（ＩＶ）のＲ^２１としての炭素数２～１２のアルキレン基、又は、炭素数２～３０の（ポリ）アルキレンオキシ基の好ましい態様と同様である。
　式（Ｒ１）中、Ｘは酸素原子であることが好ましい。
　式（Ｒ１）～（Ｒ３）中、＊は式（ＩＶ）中の＊と同義であり、好ましい態様も同様である。
　式（Ｒ１）で表される構造は、例えば、フェノール性ヒドロキシ基等のヒドロキシ基を有するポリイミドと、イソシアナト基及びエチレン性不飽和結合を有する化合物（例えば、２－イソシアナトエチルメタクリレート等）とを反応することにより得られる。
　式（Ｒ２）で表される構造は、例えば、カルボキシ基を有するポリイミドと、ヒドロキシ基及びエチレン性不飽和結合を有する化合物（例えば、２－ヒドロキシエチルメタクリレート等）とを反応することにより得られる。
　式（Ｒ３）で表される構造は、例えば、フェノール性ヒドロキシ基等のヒドロキシ基を有するポリイミドと、グリシジル基及びエチレン性不飽和結合を有する化合物（例えば、グリシジルメタクリレート等）とを反応することにより得られる。 Among these, R ²¹ is preferably a group represented by any one of the following formulae (R1) to (R3), and more preferably a group represented by formula (R1).

In formulas (R1) to (R3), L represents a single bond, an alkylene group having 2 to 12 carbon atoms, a (poly)alkyleneoxy group having 2 to 30 carbon atoms, or a group in which two or more of these are bonded together; X represents an oxygen atom or a sulfur atom; * represents a bonding site with another structure; and ● represents a bonding site with the oxygen atom to which ^R21 in formula (IV) is bonded.
In formulas (R1) to (R3), preferred embodiments of the alkylene group having 2 to 12 carbon atoms or the (poly)alkyleneoxy group having 2 to 30 carbon atoms as L are the same as the preferred embodiments of the alkylene group having 2 to 12 carbon atoms or the (poly)alkyleneoxy group having 2 to 30 carbon atoms as R ²¹ in formula (IV).
In formula (R1), X is preferably an oxygen atom.
In formulae (R1) to (R3), * has the same meaning as * in formula (IV), and preferred embodiments are also the same.
The structure represented by formula (R1) can be obtained, for example, by reacting a polyimide having a hydroxy group such as a phenolic hydroxy group with a compound having an isocyanato group and an ethylenically unsaturated bond (for example, 2-isocyanatoethyl methacrylate).
The structure represented by formula (R2) can be obtained, for example, by reacting a polyimide having a carboxy group with a compound having a hydroxy group and an ethylenically unsaturated bond (for example, 2-hydroxyethyl methacrylate, etc.).
The structure represented by formula (R3) can be obtained, for example, by reacting a polyimide having a hydroxy group such as a phenolic hydroxy group with a compound having a glycidyl group and an ethylenically unsaturated bond (for example, glycidyl methacrylate, etc.).

In formula (IV), * represents a bonding site with another structure, and is preferably a bonding site with the main chain of the polyimide.

The amount of ethylenically unsaturated bonds relative to the total mass of the polyimide is preferably 0.0001 to 0.1 mol/g, and more preferably 0.0005 to 0.05 mol/g.

--Polymerizable group other than a group having an ethylenically unsaturated bond--
The polyimide may have a polymerizable group other than the group having an ethylenically unsaturated bond.
Examples of the polymerizable group other than the group having an ethylenically unsaturated bond include an epoxy group, a cyclic ether group such as an oxetanyl group, an alkoxymethyl group such as a methoxymethyl group, and a methylol group.
The polymerizable group other than the group having an ethylenically unsaturated bond is preferably included in, for example, R ¹³¹ in the repeating unit represented by formula (4) described below.
The amount of polymerizable groups other than groups having ethylenically unsaturated bonds relative to the total mass of the polyimide is preferably 0.0001 to 0.1 mol/g, and more preferably 0.001 to 0.05 mol/g.

- Polarity conversion group -
The polyimide may have a polarity conversion group such as an acid-decomposable group. The acid-decomposable group in the polyimide is the same as the acid-decomposable group described in R ¹¹³ and R ¹¹⁴ in the above formula (2), and preferred embodiments are also the same.
The polarity conversion group is contained, for example, in R ¹³¹ and R ¹³² in the repeating unit represented by formula (4) described later, or at the terminal of the polyimide.

-Acid value-
When the polyimide is subjected to alkaline development, from the viewpoint of improving developability, the acid value of the polyimide is preferably 30 mgKOH/g or more, more preferably 50 mgKOH/g or more, and even more preferably 70 mgKOH/g or more.
The acid value is preferably 500 mgKOH/g or less, more preferably 400 mgKOH/g or less, and even more preferably 200 mgKOH/g or less.
When the polyimide is subjected to development using a developer containing an organic solvent as a main component (for example, "solvent development"), the acid value of the polyimide is preferably from 1 to 35 mgKOH/g, more preferably from 2 to 30 mgKOH/g, and even more preferably from 5 to 20 mgKOH/g.
The acid value is measured by a known method, for example, the method described in JIS K 0070:1992.
The acid group contained in the polyimide is preferably an acid group having a pKa of 0 to 10, more preferably 3 to 8, from the viewpoint of achieving both storage stability and developability.
pKa is the equilibrium constant Ka of a dissociation reaction in which a hydrogen ion is released from an acid, expressed as its negative common logarithm pKa. In this specification, pKa is a value calculated using ACD/ChemSketch (registered trademark) unless otherwise specified. For pKa, the value listed in "Revised 5th Edition Chemistry Handbook: Basics" edited by the Chemical Society of Japan may be referred to.
When the acid group is a polyacid, such as phosphoric acid, the pKa is the first dissociation constant.
As such an acid group, the polyimide preferably contains at least one type selected from the group consisting of a carboxy group and a phenolic hydroxy group, and more preferably contains a phenolic hydroxy group.

-Phenol hydroxy group-
From the viewpoint of ensuring an appropriate development speed with an alkaline developer, the polyimide preferably has a phenolic hydroxy group.
The polyimide may have a phenolic hydroxy group at the end of the main chain or on a side chain.
The phenolic hydroxy group is preferably contained in, for example, R ¹³² or R ¹³¹ in the repeating unit represented by formula (4) described below.
The amount of the phenolic hydroxy group relative to the total mass of the polyimide is preferably from 0.1 to 30 mol/g, and more preferably from 1 to 20 mol/g.

　式（４）中、Ｒ^１３１は、２価の有機基を表し、Ｒ^１３２は、４価の有機基を表す。
　重合性基を有する場合、重合性基は、Ｒ^１３１及びＲ^１３２の少なくとも一方に位置していてもよいし、下記式（４－１）又は式（４－２）に示すようにポリイミドの末端に位置していてもよい。
式（４－１）

式（４－１）中、Ｒ^１３３は重合性基であり、他の基は式（４）と同義である。
式（４－２）

　Ｒ^１３４及びＲ^１３５の少なくとも一方は重合性基であり、重合性基でない場合は有機基であり、他の基は式（４）と同義である。 The polyimide used in the present invention is not particularly limited as long as it is a polymeric compound having an imide structure, but it is preferable that the polyimide contains a repeating unit represented by the following formula (4).

In formula (4), R ¹³¹ represents a divalent organic group, and R ¹³² represents a tetravalent organic group.
When the polyimide has a polymerizable group, the polymerizable group may be located at least one of R ¹³¹ and R ¹³² , or may be located at the end of the polyimide as shown in the following formula (4-1) or formula (4-2).
Formula (4-1)

In formula (4-1), R ¹³³ is a polymerizable group, and the other groups are the same as those in formula (4).
Formula (4-2)

At least one of R ¹³⁴ and R ¹³⁵ is a polymerizable group, and when it is not a polymerizable group, it is an organic group, and the other groups have the same meanings as in formula (4).

Examples of the polymerizable group include the above-mentioned group containing an ethylenically unsaturated bond, and crosslinkable groups other than the above-mentioned group having an ethylenically unsaturated bond.
R ¹³¹ represents a divalent organic group. Examples of the divalent organic group include the same as those of R ¹¹¹ in formula (2), and the preferred range is also the same.
R ¹³¹ may be a diamine residue remaining after removal of the amino group of the diamine. The diamine may be an aliphatic, cycloaliphatic or aromatic diamine. Specific examples include the example of R ¹¹¹ in the formula (2) of the polyimide precursor.

R ¹³¹ is preferably a diamine residue having at least two alkylene glycol units in the main chain in order to more effectively suppress the occurrence of warping during firing, more preferably a diamine residue containing two or more ethylene glycol chains, propylene glycol chains, or both in one molecule, and even more preferably a diamine residue of the above diamine that does not contain an aromatic ring.

Diamines containing two or more ethylene glycol chains, propylene glycol chains, or both in one molecule include, but are not limited to, Jeffamine (registered trademark) KH-511, ED-600, ED-900, ED-2003, EDR-148, EDR-176, D-200, D-400, D-2000, D-4000 (all trade names, manufactured by HUNTSMAN Co., Ltd.), 1-(2-(2-(2-aminopropoxy)ethoxy)propoxy)propan-2-amine, 1-(1-(1-(2-aminopropoxy)propan-2-yl)oxy)propan-2-amine, etc.

R ¹³² represents a tetravalent organic group. Examples of the tetravalent organic group include the same as those of R ¹¹⁵ in formula (2), and the preferred range is also the same.
For example, the four bonds of the tetravalent organic group exemplified as R ¹¹⁵ bond to the four —C(═O)— portions in formula (4) to form a condensed ring.

R ¹³² may be a tetracarboxylic acid residue remaining after removal of the anhydride group from a tetracarboxylic dianhydride. A specific example is R ¹¹⁵ in the formula (2) of the polyimide precursor. From the viewpoint of the strength of the organic film, R ¹³² is preferably an aromatic diamine residue having 1 to 4 aromatic rings.

It is also preferable that at least one of R ¹³¹ and R ¹³² has an OH group. More specifically, preferred examples of R ¹³¹ include 2,2-bis(3-hydroxy-4-aminophenyl)propane, 2,2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, and the above (DA-1) to (DA-18), and more preferred examples of R ¹³² include the above (DAA-1) to (DAA-5).

The polyimide preferably contains a repeating unit represented by the following formula (4-3) as the repeating unit represented by formula (4).

In formula (4-3), ^X1 represents an organic group having 4 or more carbon atoms, ^Y1 represents an organic group having 4 or more carbon atoms, and each ^R1 independently represents a structure represented by the following formula (R-1), m represents an integer of 0 to 4, and n represents an integer of 1 or more.

In formula (R-1), L ¹ represents a linking group having a valence of a2+1, A ¹ represents a polymerizable group, a2 represents an integer of 1 or more, and * represents a bonding site with X ¹ or Y ¹ in formula (4-3).

-R ¹ -
Each R ¹ independently represents a structure represented by formula (R-1).
In formula (R-1), ^L1 represents a2+1-valent linking group.
^L1 is preferably a group represented by the following formula (LR-1).

In formula (LR-1), ^Lx represents a2+1-valent linking group, a2 represents an integer of 1 or greater, * represents a bonding site with ^X1 or ^Y1 in formula (4-3), and # represents a bonding site with ^A1 in formula (R-1).
^Lx is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms.
The preferred embodiments of a2 in formula (LR-1) are the same as the preferred embodiments of a2 in formula (R-1).

^-A1-
In formula (R-1), A ¹ represents a polymerizable group, and preferred embodiments of the polymerizable group are the same as those of the polymerizable group in the specific resin described above.
Among these, at least one of A ¹ in formula (R-1) included in formula (4-3) is preferably a group having an aromatic ring directly bonded to a vinyl group, a (meth)acrylamide group, or a (meth)acryloxy group, and more preferably a vinylphenyl group.

-a2-
In formula (R-1), a2 represents an integer of 1 or more, preferably 1 or 2, and more preferably 1.
In addition, the number of ester bonds contained in formula (R-1) is preferably 1 or 0.

^-X1-
In formula (4-3), X ¹ preferably includes a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulae (V-1) to (V-4).

In formula (V-2), R ^{1 and X1} each independently represent a hydrogen atom, an alkyl group or a halogenated alkyl group.
In formula (V-3), R ^{1 X2} and R ^{1 X3} each independently represent a hydrogen atom or a substituent, and R ^{1 X2} and R ^{1 X3} may be bonded to form a ring structure.

In formula (V-2), R ^X1 are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and further preferably a methyl group or a trifluoromethyl group. The halogenated alkyl group refers to an alkyl group in which at least one hydrogen atom is substituted with a halogen atom. As the halogen atom, F or Cl is preferable, and F is more preferable.
In formula (V-3), it is preferable that R ^{1 X2} and R ^{1 X3} each independently represent a hydrogen atom.
When R ^X2 and R ^X3 are bonded to form a ring structure, the structure formed by bonding R ^X2 and R ^X3 is preferably a single bond, -O- or -CR ₂ -, more preferably -O- or -CR ₂ -, and even more preferably -O-. R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group or an aryl group, and more preferably a hydrogen atom.

When X ¹ is a group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by formula (V-1), X ¹ is preferably a group represented by the following formula (V-1-1). In the following formula, * represents a bonding site with four carbonyl groups to which X ¹ in formula (4-3) is bonded, and n1 represents an integer of 0 to 5, and is also preferably an integer of 1 to 5. Furthermore, the hydrogen atoms in the following structure may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group. Furthermore, when m in the above formula (4-3) is an integer of 1 to 4, it is preferable that m hydrogen atoms are substituted with R ¹ in formula (4-3).

When X ¹ is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-2), X ¹ is preferably a group represented by the following formula (V-2-1) or formula (V-2-2), and from the viewpoint of lowering the amine value in the resin, it is preferably a group represented by formula (V-2-2). In the following formula, L ^X1 represents a single bond or -O-, and * represents a bonding site with the four carbonyl groups to which X ¹ in formula (4-3) is bonded. The definition and preferred aspects of R ^X1 are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group. In addition, when m in the above formula (4-3) is an integer of 1 to 4, it is preferable that m hydrogen atoms are substituted with R ¹ in formula (4-3).

When X ¹ is a group containing a structure obtained by removing two or more hydrogen atoms from the structure represented by formula (V-3), X ¹ is preferably a group represented by formula (V-3-1) or formula (V-3-2) below, and from the viewpoint of lowering the dielectric constant, it is preferably a group represented by formula (V-3-2). In the following formula, * represents a bonding site with four carbonyl groups to which X ¹ in formula (4-3) is bonded. The definitions and preferred embodiments of R ^X2 and R ^X3 are as described above. The hydrogen atoms in these structures may be further substituted with known substituents such as hydroxyl groups and hydrocarbon groups. When m in the above formula (4-3) is an integer of 1 to 4, it is preferable that m hydrogen atoms are substituted with R ¹ in formula (4-3).

When X ¹ is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-4), X ¹ is preferably a group represented by the following formula (V-4-1). In the following formula, * represents a bonding site with four carbonyl groups to which X ¹ in formula (4-3) is bonded, and n1 represents an integer of 0 to 5. Furthermore, the hydrogen atoms in the following structure may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group. Furthermore, when m in the above formula (4-3) is an integer of 1 to 4, it is preferable that m hydrogen atoms are substituted with R ¹ in formula (4-3).

In addition, X ¹ may be a group in which m hydrogen atoms have been removed from the group represented by R ¹³² in the above formula (4).
In addition, it is preferable that ^X1 does not contain an imide structure in the structure.
In the present invention, the imide structure is a structure represented by -C(=O)N(-*)C(=O)-, where * represents a bonding site with another structure.
Furthermore, it is preferable that ^X1 does not contain a urethane bond, a urea bond or an amide bond in the structure.
In the present invention, the urethane bond is a bond represented by *-O-C(=O)-NR ^N -*, where R ^N represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. R ^N is preferably a hydrogen atom, an alkyl group or an aryl group, and more preferably a hydrogen atom.
In the present invention, the urea bond is a bond represented by *-NR ^N -C(=O)-NR ^N -*, where each R ^N independently represents a hydrogen atom or a monovalent organic group, and each * represents a bonding site with a carbon atom. Preferred aspects of R ^N are as described above.
In the present invention, the amide bond is a bond represented by *-NR ^N -C(=O)-*, where R ^N represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. The preferred embodiments of R ^N are as described above.
Furthermore, it is preferable that ^X1 does not contain an ester bond in the structure.
In the present invention, the ester bond is a bond represented by *--O--C(=O)--*.
Among these, it is preferable that X ^{1 does not contain an imide structure, a urethane bond, a urea bond, or an amide bond, and it is more preferable that X 1} does not contain an imide structure, a urethane bond, a urea bond, an amide bond, or an ester bond.

^-Y1-
In formula (4-3), Y ¹ is preferably a group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-4) above.

When Y ¹ is a group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by formula (V-1), Y ¹ is preferably a group in which n hydrogen atoms have been removed from a group represented by formula (V-1-2) below. In the formula below, * represents the bonding site with the two nitrogen atoms to which Y ¹ in formula (4-3) is bonded, and n1 represents an integer of 1 to 5. Of the hydrogen atoms in the structure below, n are substituted with R ¹ in formula (4-3). n has the same meaning as n in formula (4-3). In addition, the hydrogen atoms in the structure below may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group.

When Y ¹ is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-2), Y ¹ is preferably a group represented by formula (V-2-3) or formula (V-2-4) below, and from the viewpoint of decreasing the dielectric constant, etc., it is preferably a group represented by formula (V-2-4). In the following formulas, L ^X1 represents a single bond or -O-, and * represents a bonding site with the two nitrogen atoms to which Y ¹ in formula (4-3) is bonded. In addition, the preferred embodiment of R ^X1 is as described above. Among the hydrogen atoms in the following structure, n are substituted with R ¹ in formula (4-3). n has the same meaning as n in formula (4-3). In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group.

When Y ¹ is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-3), Y ¹ is preferably a group represented by formula (V-3-3) or formula (V-3-4) below, and from the viewpoint of lowering the dielectric constant, etc., it is preferably a group represented by formula (V-3-3). In the following formula, * represents a bonding site with the two nitrogen atoms to which Y ¹ in formula (4-3) is bonded. In addition, preferred aspects of R ^X2 and R ^X3 are as described above. Among the hydrogen atoms in the following structure, n are substituted with R ¹ in formula (4-3). n has the same meaning as n in formula (4-3). In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group.

When Y ¹ is a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by formula (V-4), Y ¹ is preferably a group represented by formula (V-4-2) below. In the formula below, * represents a bonding site with the two nitrogen atoms to which Y ¹ in formula (4-3) is bonded, and n1 represents an integer of 0 to 5. An embodiment in which n1 is 0 is also one of the preferred embodiments of the present invention. Of the hydrogen atoms in the structure below, n are substituted with R ¹ in formula (4-3). n has the same meaning as n in formula (4-3). In addition, the hydrogen atoms in the structure below may be further substituted with known substituents such as a hydroxy group and a hydrocarbon group.

Additionally, Y ¹ may be a group in which n hydrogen atoms have been removed from the group represented by R ¹³¹ in the above formula (4).
In addition, it is preferable that ^Y1 does not contain an imide structure in the structure.
It is also preferred that ^Y1 does not contain a urethane bond, a urea bond or an amide bond in the structure.
Furthermore, it is preferable that ^Y1 does not contain an ester bond in the structure.
Among these, it is preferable that ^Y1 does not contain an imide structure, a urethane bond, a urea bond, or an amide bond, and it is more preferable that Y1 does not contain an imide structure, a urethane bond, a urea bond, an amide bond, or an ester bond.

Among these, it is preferable that X ¹ and Y ¹ in formula (4-3) each include a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the above formulas (V-1) to (V-4).

In formula (4-3), m is preferably an integer of 0 to 2, and more preferably 0 or 1. Moreover, an embodiment in which m is 0 is also one of the preferred embodiments of the present invention.
In formula (4-3), n is preferably 1 or 2, and more preferably 2.

It is also preferable that the polyimide has fluorine atoms in its structure. The content of fluorine atoms in the polyimide is preferably 10% by mass or more, and more preferably 20% by mass or less.

In order to improve adhesion to the substrate, the polyimide may be copolymerized with an aliphatic group having a siloxane structure. Specifically, examples of diamine components include bis(3-aminopropyl)tetramethyldisiloxane and bis(p-aminophenyl)octamethylpentasiloxane.

In order to improve the storage stability of the resin composition, it is preferable that the main chain ends of the polyimide are blocked with a terminal blocking agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound. Of these, it is more preferable to use a monoamine, and preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy -5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, etc. Two or more of these may be used, and multiple different end groups may be introduced by reacting multiple end-capping agents.

-Imidization rate (ring closure rate)-
From the viewpoints of the film strength, insulating properties, etc. of the resulting organic film, the imidization rate of the polyimide (also referred to as the "ring closure rate") is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more.
There is no particular upper limit to the imidization rate, and it is sufficient if it is 100% or less.
The imidization rate is measured, for example, by the following method.
The infrared absorption spectrum of the polyimide is measured to determine the peak intensity P1 near 1377 cm ⁻¹ , which is an absorption peak derived from the imide structure. Next, the polyimide is heat-treated at 350° C. for 1 hour, and then the infrared absorption spectrum is measured again to determine the peak intensity P2 near 1377 cm ⁻¹ . Using the obtained peak intensities P1 and P2, the imidization rate of the polyimide can be calculated based on the following formula.
Imidization rate (%)=(peak intensity P1/peak intensity P2)×100

The polyimide may contain repeating units represented by the above formula (4) in which all of the repeating units have the same combination of R ¹³¹ and R ¹³² , or may contain repeating units represented by the above formula (4) containing two or more different combinations of R ¹³¹ and R ^132. The polyimide may contain other types of repeating units in addition to the repeating units represented by the above formula (4). Examples of other types of repeating units include the repeating units represented by the above formula (2).

Polyimides can be synthesized, for example, by reacting tetracarboxylic dianhydride with diamine (partially substituted with a terminal blocking agent that is a monoamine) at low temperature, by reacting tetracarboxylic dianhydride (partially substituted with a terminal blocking agent that is an acid anhydride, monoacid chloride compound, or monoactive ester compound) with diamine at low temperature, by obtaining a diester from tetracarboxylic dianhydride with alcohol and then reacting it with diamine (partially substituted with a terminal blocking agent that is a monoamine) in the presence of a condensing agent, by obtaining a diester from tetracarboxylic dianhydride with alcohol and then converting the remaining dicarboxylic acid into an acid chloride and reacting it with diamine (partially substituted with a terminal blocking agent that is a monoamine), or by using a method in which a polyimide precursor is obtained and then completely imidized using a known imidization reaction method, or by stopping the imidization reaction midway and introducing a partial imide structure, or by blending a completely imidized polymer with the polyimide precursor to partially introduce an imide structure. Other known methods for synthesizing polyimides can also be applied.

The weight average molecular weight (Mw) of the polyimide is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, and even more preferably 15,000 to 40,000. By making the weight average molecular weight 5,000 or more, the folding resistance of the film after curing can be improved. In order to obtain an organic film having excellent mechanical properties (e.g., breaking elongation), the weight average molecular weight is particularly preferably 15,000 or more.
The number average molecular weight (Mn) of the polyimide is preferably from 2,000 to 40,000, more preferably from 3,000 to 30,000, and even more preferably from 4,000 to 20,000.
The polyimide preferably has a molecular weight dispersity of 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the polyimide molecular weight dispersity is not particularly limited, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
When the resin composition contains multiple polyimides as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one polyimide are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polyimides as one resin are each within the above ranges.

　式（３）中、Ｒ^１２１は、２価の有機基を表し、Ｒ^１２２は、４価の有機基を表し、Ｒ^１２３及びＲ^１２４は、それぞれ独立に、水素原子又は１価の有機基を表す。 [Polybenzoxazole precursor]
The polybenzoxazole precursor used in the present invention is not particularly limited with respect to its structure, but preferably contains a repeating unit represented by the following formula (3).

In formula (3), R ¹²¹ represents a divalent organic group, R ¹²² represents a tetravalent organic group, and R ¹²³ and R ¹²⁴ each independently represent a hydrogen atom or a monovalent organic group.

In formula (3), R ¹²³ and R ¹²⁴ have the same definition as R ¹¹³ in formula (2), and the preferred range is also the same. That is, it is preferable that at least one of them is a polymerizable group.
In formula (3), R ¹²¹ represents a divalent organic group. The divalent organic group is preferably a group containing at least one of an aliphatic group and an aromatic group. The aliphatic group is preferably a linear aliphatic group. R ¹²¹ is preferably a dicarboxylic acid residue. Only one type of dicarboxylic acid residue may be used, or two or more types may be used.

As the dicarboxylic acid residue, a dicarboxylic acid residue containing an aliphatic group and a dicarboxylic acid residue containing an aromatic group are preferred, and a dicarboxylic acid residue containing an aromatic group is more preferred.
The dicarboxylic acid containing an aliphatic group is preferably a dicarboxylic acid containing a linear or branched (preferably linear) aliphatic group, and more preferably a dicarboxylic acid consisting of a linear or branched (preferably linear) aliphatic group and two -COOH groups. The number of carbon atoms in the linear or branched (preferably linear) aliphatic group is preferably 2 to 30, more preferably 2 to 25, even more preferably 3 to 20, even more preferably 4 to 15, and particularly preferably 5 to 10. The linear aliphatic group is preferably an alkylene group.
Dicarboxylic acids containing a linear aliphatic group include malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, pimelic acid, and 2,2,6,6-tetramethylpimelic acid. , suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanediacid, heneicosanediacid, docosanediacid, tricosanediacid, tetracosanediacid, pentacosanediacid, hexacosanediacid, heptacosanediacid, octacosanediacid, nonacosanediacid, triacontanedioic acid, hentriacontanedioic acid, dotriacontanedioic acid, diglycolic acid, and further dicarboxylic acids represented by the following formula.

（式中、Ｚは炭素数１～６の炭化水素基であり、ｎは１～６の整数である。）

(In the formula, Z is a hydrocarbon group having 1 to 6 carbon atoms, and n is an integer from 1 to 6.)

As dicarboxylic acids containing an aromatic group, the following dicarboxylic acids having an aromatic group are preferred, and the following dicarboxylic acids consisting of a group having an aromatic group and two -COOH groups are more preferred.

In the formula, A represents a divalent group selected from the group consisting of -CH ₂ -, -O-, -S-, -SO ₂ -, -CO-, -NHCO-, -C(CF ₃ ) ₂ -, and -C(CH ₃ ) ₂ -, and each * independently represents a bonding site to another structure.

Specific examples of dicarboxylic acids containing aromatic groups include 4,4'-carbonyldibenzoic acid, 4,4'-dicarboxydiphenyl ether, and terephthalic acid.

In formula (3), R ¹²² represents a tetravalent organic group. The tetravalent organic group has the same meaning as R ¹¹⁵ in formula (2) above, and the preferred range is also the same.
R ¹²² is preferably a group derived from a bisaminophenol derivative. Examples of the group derived from a bisaminophenol derivative include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, 3,3'-diamino-4,4'-dihydroxydiphenyl sulfone, 4,4'-diamino-3,3'-dihydroxydiphenyl sulfone, bis-(3-amino-4-hydroxyphenyl)methane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2-bis-(4-amino bis-(4-amino-3-hydroxyphenyl)hexafluoropropane, bis-(4-amino-3-hydroxyphenyl)methane, 2,2-bis-(4-amino-3-hydroxyphenyl)propane, 4,4'-diamino-3,3'-dihydroxybenzophenone, 3,3'-diamino-4,4'-dihydroxybenzophenone, 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 3,3'-diamino-4,4'-dihydroxydiphenyl ether, 1,4-diamino-2,5-dihydroxybenzene, 1,3-diamino-2,4-dihydroxybenzene, 1,3-diamino-4,6-dihydroxybenzene, etc. These bisaminophenols may be used alone or in combination.

Among the bisaminophenol derivatives, the following bisaminophenol derivatives having aromatic groups are preferred.

　式中、Ｘ_１は、－Ｏ－、－Ｓ－、－Ｃ（ＣＦ_３）_２－、－ＣＨ_２－、－ＳＯ_２－、－ＮＨＣＯ－を表し、＊及び＃はそれぞれ、他の構造との結合部位を表す。Ｒは水素原子又は１価の置換基を表し、水素原子又は炭化水素基が好ましく、水素原子又はアルキル基がより好ましい。また、Ｒ^１２２は、上記式により表される構造であることも好ましい。Ｒ^１２２が、上記式により表される構造である場合、計４つの＊及び＃のうち、いずれか２つが式（３）中のＲ^１２２が結合する窒素原子との結合部位であり、かつ、別の２つが式（３）中のＲ^１２２が結合する酸素原子との結合部位であることが好ましく、２つの＊が式（３）中のＲ^１２２が結合する酸素原子との結合部位であり、かつ、２つの＃が式（３）中のＲ^１２２が結合する窒素原子との結合部位であるか、又は、２つの＊が式（３）中のＲ^１２２が結合する窒素原子との結合部位であり、かつ、２つの＃が式（３）中のＲ^１２２が結合する酸素原子との結合部位であることがより好ましく、２つの＊が式（３）中のＲ^１２２が結合する酸素原子との結合部位であり、かつ、２つの＃が式（３）中のＲ^１２２が結合する窒素原子との結合部位であることが更に好ましい。

In the formula, _X1 represents -O-, -S-, -C( _CF3 ) _2- , _-CH2- , _-SO2- or -NHCO-, and * and # each represent a bonding site with another structure. R represents a hydrogen atom or a monovalent substituent, preferably a hydrogen atom or a hydrocarbon group, and more preferably a hydrogen atom or an alkyl group. It is also preferable that ^R122 represents a structure represented by the above formula. When R ¹²² is a structure represented by the above formula, of the total of four * and #, it is preferable that any two are bonding sites with the nitrogen atom to which R ¹²² in formula (3) is bonded, and the other two are bonding sites with the oxygen atom to which R ¹²² in formula (3) is bonded, and the two * are bonding sites with the oxygen atom to which R ¹²² in formula (3) is bonded, and the two # are bonding sites with the nitrogen atom to which R ¹²² in formula (3) is bonded, or it is more preferable that the two * are bonding sites with the nitrogen atom to which R ¹²² in formula (3) is bonded, and the two # are bonding sites with the oxygen atom to which R ¹²² in formula (3) is bonded, and it is even more preferable that the two * are bonding sites with the oxygen atom to which R ¹²² in formula (3) is bonded, and the two # are bonding sites with the nitrogen atom to which R ¹²² in formula (3) is bonded.

The bisaminophenol derivative is also preferably a compound represented by formula (As).

In formula (A-s), R ₁ is a hydrogen atom, alkylene, substituted alkylene, -O-, -S-, -SO ₂ -, -CO-, -NHCO-, a single bond, or an organic group selected from the group represented by the following formula (A-sc). R ₂ is any one of a hydrogen atom, an alkyl group, an alkoxy group, an acyloxy group, and a cyclic alkyl group, and may be the same or different. R ₃ is any one of a hydrogen atom, a linear or branched alkyl group, an alkoxy group, an acyloxy group, and a cyclic alkyl group, and may be the same or different.

In the organic group selected from the group of formula (A-sc), * indicates that it is bonded to the aromatic ring of the aminophenol group of the bisaminophenol derivative represented by the above formula (As).

In formula (A-s), having a substituent at the ortho position of the phenolic hydroxy group, i.e., at R ₃ , is considered to bring the distance between the carbonyl carbon of the amide bond and the hydroxy group closer, and is particularly preferred in that the effect of achieving a high cyclization rate when cured at low temperature is further enhanced.

In formula (As), it is preferable that R ₂ is an alkyl group and R ₃ is an alkyl group, since this can maintain the effects of high transparency to i-line and a high cyclization rate when cured at a low temperature.

In formula (A-s), it is more preferable that R ₁ is an alkylene or a substituted alkylene. Specific examples of the alkylene and substituted alkylene for R ₁ include linear or branched alkyl groups having 1 to 8 carbon atoms, and among these, -CH ₂ -, -CH(CH ₃ )-, and -C(CH ₃ ) ₂ - are more preferable in that they can provide a well-balanced polybenzoxazole precursor that has sufficient solubility in solvents while maintaining the effects of high transparency to i-line and a high cyclization rate when cured at low temperature.

For a method for producing the bisaminophenol derivative represented by formula (A-s), reference can be made to, for example, paragraphs 0085 to 0094 and Example 1 (paragraphs 0189 to 0190) of JP 2013-256506 A, the contents of which are incorporated herein by reference.

Specific examples of the structure of the bisaminophenol derivative represented by formula (A-s) include those described in paragraphs 0070 to 0080 of JP 2013-256506 A, the contents of which are incorporated herein by reference. Specific examples of the structure of the bisaminophenol derivative represented by formula (A-s) are not limited to these.

The polybenzoxazole precursor may contain other types of repeating units in addition to the repeating unit of formula (3) above.
The polybenzoxazole precursor preferably contains a diamine residue represented by the following formula (SL) as another type of repeating unit, in that the occurrence of warping due to ring closure can be suppressed.

　式（ＳＬ）中、Ｚは、ａ構造とｂ構造を有し、Ｒ^１ｓは、水素原子又は炭素数１～１０の炭化水素基であり、Ｒ^２ｓは炭素数１～１０の炭化水素基であり、Ｒ^３ｓ、Ｒ^４ｓ、Ｒ^５ｓ、Ｒ^６ｓのうち少なくとも１つは芳香族基で、残りは水素原子又は炭素数１～３０の有機基で、それぞれ同一でも異なっていてもよい。ａ構造及びｂ構造の重合は、ブロック重合でもランダム重合でもよい。Ｚ部分のモル％は、ａ構造は５～９５モル％、ｂ構造は９５～５モル％であり、ａ＋ｂは１００モル％である。

In formula (SL), Z has an a-structure and a b-structure, R ^1s is a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, R ^2s is a hydrocarbon group having 1 to 10 carbon atoms, and at least one of R ^3s , R ^4s , R ^5s , and R ^6s is an aromatic group, and the remaining are a hydrogen atom or an organic group having 1 to 30 carbon atoms, which may be the same or different. Polymerization of the a-structure and the b-structure may be block polymerization or random polymerization. The mol % of the Z portion is 5 to 95 mol % for the a-structure, 95 to 5 mol % for the b-structure, and a+b is 100 mol %.

In formula (SL), preferred Z includes those in which R ^5s and R ^6s in the b structure are phenyl groups. The molecular weight of the structure represented by formula (SL) is preferably 400 to 4,000, more preferably 500 to 3,000. By setting the molecular weight within the above range, it is possible to more effectively reduce the elastic modulus after dehydration and ring closure of the polybenzoxazole precursor, and to simultaneously achieve the effect of suppressing warpage and the effect of improving solvent solubility.

When the diamine residue represented by formula (SL) is contained as another type of repeating unit, it is also preferable to further contain a tetracarboxylic acid residue remaining after removal of the anhydride group from the tetracarboxylic dianhydride as a repeating unit. Examples of such a tetracarboxylic acid residue include the examples of R ¹¹⁵ in formula (2).

The weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably 18,000 to 30,000, more preferably 20,000 to 29,000, and even more preferably 22,000 to 28,000.The number average molecular weight (Mn) of the polybenzoxazole precursor is preferably 7,200 to 14,000, more preferably 8,000 to 12,000, and even more preferably 9,200 to 11,200.
The polybenzoxazole precursor has a molecular weight dispersity of preferably 1.4 or more, more preferably 1.5 or more, and even more preferably 1.6 or more. The upper limit of the molecular weight dispersity of the polybenzoxazole precursor is not particularly specified, but is preferably 2.6 or less, more preferably 2.5 or less, even more preferably 2.4 or less, even more preferably 2.3 or less, and even more preferably 2.2 or less.
When the resin composition contains multiple polybenzoxazole precursors as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one polybenzoxazole precursor are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polybenzoxazole precursors as one resin are each within the above ranges.

　式（Ｘ）中、Ｒ^１３３は、２価の有機基を表し、Ｒ^１３４は、４価の有機基を表す。
　重合性基又は酸分解性基等の極性変換基を有する場合、重合性基又は酸分解性基等の極性変換基は、Ｒ^１３３及びＲ^１３４の少なくとも一方に位置していてもよいし、下記式（Ｘ－１）又は式（Ｘ－２）に示すようにポリベンゾオキサゾールの末端に位置していてもよい。
式（Ｘ－１）

　式（Ｘ－１）中、Ｒ^１３５及びＲ^１３６の少なくとも一方は、重合性基又は酸分解性基等の極性変換基であり、重合性基又は酸分解性基等の極性変換基でない場合は有機基であり、他の基は式（Ｘ）と同義である。
式（Ｘ－２）

　式（Ｘ－２）中、Ｒ^１３７は重合性基又は酸分解性基等の極性変換基であり、他は置換基であり、他の基は式（Ｘ）と同義である。 [Polybenzoxazole]
The polybenzoxazole is not particularly limited as long as it is a polymeric compound having a benzoxazole ring, but is preferably a compound represented by the following formula (X), and more preferably a compound represented by the following formula (X) having a polymerizable group. The polymerizable group is preferably a radically polymerizable group. Alternatively, it may be a compound represented by the following formula (X) having a polarity conversion group such as an acid-decomposable group.

In formula (X), R ¹³³ represents a divalent organic group, and R ¹³⁴ represents a tetravalent organic group.
When a polarity conversion group such as a polymerizable group or an acid-decomposable group is present, the polarity conversion group such as a polymerizable group or an acid-decomposable group may be located at least one of R ¹³³ and R ¹³⁴ , or may be located at an end of the polybenzoxazole as shown in the following formula (X-1) or formula (X-2).
Formula (X-1)

In formula (X-1), at least one of R ¹³⁵ and R ¹³⁶ is a polarity conversion group such as a polymerizable group or an acid-decomposable group, and when it is not a polarity conversion group such as a polymerizable group or an acid-decomposable group, it is an organic group, and the other groups are as defined in formula (X).
Formula (X-2)

In formula (X-2), R ¹³⁷ is a polarity conversion group such as a polymerizable group or an acid-decomposable group, and the others are substituents, and the other groups are the same as those in formula (X).

The polarity conversion group, such as a polymerizable group or an acid-decomposable group, is the same as the polymerizable group described above for the polymerizable group possessed by the polyimide precursor.

R ¹³³ represents a divalent organic group. The divalent organic group may be an aliphatic group or an aromatic group. Specific examples include the examples of R ¹²¹ in the formula (3) of the polybenzoxazole precursor, and preferred examples are the same as R ¹²¹ .

R ¹³⁴ represents a tetravalent organic group. Examples of the tetravalent organic group include the examples of R ¹²² in the formula (3) of the polybenzoxazole precursor, and preferred examples are the same as those of R ¹²² .
For example, the four bonds of the tetravalent organic group exemplified as R ¹²² bond to the nitrogen atom and oxygen atom in the above formula (X) to form a condensed ring. For example, when R ¹³⁴ is the following organic group, the following structure is formed. In the following structure, * represents the bonding site with the nitrogen atom or oxygen atom in formula (X), respectively.

The oxazolization rate of the polybenzoxazole is preferably 85% or more, more preferably 90% or more. The upper limit is not particularly limited, and may be 100%. By having the oxazolization rate of 85% or more, the film shrinkage due to ring closure that occurs when the film is oxazolized by heating is reduced, and the occurrence of warpage can be more effectively suppressed.
The oxazole ratio is measured, for example, by the following method.
The infrared absorption spectrum of the polybenzoxazole is measured, and the peak intensity Q1 at about 1650 cm ⁻¹ , which is an absorption peak derived from the amide structure of the precursor, is determined. Then, the peak intensity Q1 is normalized by the absorption intensity of the aromatic ring observed at about 1490 cm ⁻¹ . After the polybenzoxazole is heat-treated at 350° C. for 1 hour, the infrared absorption spectrum is measured again, and the peak intensity Q2 at about 1650 cm ⁻¹ is determined and normalized by the absorption intensity of the aromatic ring observed at about 1490 cm ⁻¹ . Using the normalized values of the peak intensities Q1 and Q2 obtained, the oxazole ratio of the polybenzoxazole can be calculated based on the following formula.
Oxazolization rate (%)=(standard value of peak intensity Q1/standard value of peak intensity Q2)×100

The polybenzoxazole may contain repeating units of the above formula (X) having the same combination of R ¹³³ and R ¹³⁴ , or may contain repeating units of the above formula (X) having two or more different combinations of R ¹³³ and R ^134. The polybenzoxazole may contain other types of repeating units in addition to the repeating units of the above formula (X).

Polybenzoxazole can be obtained, for example, by reacting a bisaminophenol derivative with a dicarboxylic acid containing R ¹³³ or a compound selected from dicarboxylic acid dichlorides and dicarboxylic acid derivatives of the above dicarboxylic acid to obtain a polybenzoxazole precursor, which is then oxazolized using a known oxazolization reaction method.
In the case of dicarboxylic acids, in order to increase the reaction yield, etc., it is also possible to use an active ester type dicarboxylic acid derivative which has been reacted in advance with 1-hydroxy-1,2,3-benzotriazole or the like.

The weight average molecular weight (Mw) of the polybenzoxazole is preferably 5,000 to 70,000, more preferably 8,000 to 50,000, and even more preferably 10,000 to 30,000. By making the weight average molecular weight 5,000 or more, the folding resistance of the film after curing can be improved. In order to obtain an organic film having excellent mechanical properties, the weight average molecular weight is particularly preferably 20,000 or more. When two or more types of polybenzoxazole are contained, it is preferable that the weight average molecular weight of at least one type of polybenzoxazole is in the above range.
The number average molecular weight (Mn) of the polybenzoxazole is preferably from 7,200 to 14,000, more preferably from 8,000 to 12,000, and even more preferably from 9,200 to 11,200.
The molecular weight dispersity of the polybenzoxazole is preferably 1.4 or more, more preferably 1.5 or more, and even more preferably 1.6 or more. The upper limit of the molecular weight dispersity of the polybenzoxazole is not particularly specified, but is, for example, preferably 2.6 or less, more preferably 2.5 or less, even more preferably 2.4 or less, even more preferably 2.3 or less, and even more preferably 2.2 or less.
When the resin composition contains multiple polybenzoxazoles as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one polybenzoxazole are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polybenzoxazoles as one resin are each within the above ranges.

　式（ＰＡＩ－２）中、Ｒ^１１７は３価の有機基を表し、Ｒ^１１１は２価の有機基を表し、Ａ^２は酸素原子又は－ＮＨ－を表し、Ｒ^１１３は水素原子又は１価の有機基を表す。 [Polyamide-imide precursor]
The polyamideimide precursor preferably contains a repeating unit represented by the following formula (PAI-2).

In formula (PAI-2), R ¹¹⁷ represents a trivalent organic group, R ¹¹¹ represents a divalent organic group, A ² represents an oxygen atom or -NH-, and R ¹¹³ represents a hydrogen atom or a monovalent organic group.

In formula (PAI-2), R ¹¹⁷ is exemplified by a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic group, a heteroaromatic group, or a group in which two or more of these are linked by a single bond or a linking group. A linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group is preferred, and an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group is more preferred.
The above-mentioned linking group is preferably -O-, -S-, -C(=O)-, -S(=O) ₂ -, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these, and more preferably -O-, -S-, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these.
The alkylene group is preferably an alkylene group having 1 to 20 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms.
The halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and more preferably a halogenated alkylene group having 1 to 4 carbon atoms. In addition, examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferred. The halogenated alkylene group may have a hydrogen atom or all of the hydrogen atoms may be substituted with halogen atoms, but it is preferred that all of the hydrogen atoms are substituted with halogen atoms. Examples of preferred halogenated alkylene groups include a (ditrifluoromethyl)methylene group.
The arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and further preferably a 1,3-phenylene group or a 1,4-phenylene group.

Also, R ¹¹⁷ is preferably derived from a tricarboxylic acid compound in which at least one carboxy group may be halogenated. The halogenation is preferably chlorination.
In the present invention, a compound having three carboxy groups is called a tricarboxylic acid compound.
Of the three carboxy groups of the tricarboxylic acid compound, two carboxy groups may be converted into acid anhydrides.
The optionally halogenated tricarboxylic acid compound used in the production of the polyamideimide precursor includes branched aliphatic, cyclic aliphatic or aromatic tricarboxylic acid compounds.
These tricarboxylic acid compounds may be used alone or in combination of two or more.

Specifically, tricarboxylic acid compounds containing a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined via a single bond or a linking group are preferred, and tricarboxylic acid compounds containing an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined via a single bond or a linking group are more preferred.

Specific examples of tricarboxylic acid compounds include 1,2,3-propanetricarboxylic acid, 1,3,5-pentanetricarboxylic acid, citric acid, trimellitic acid, 2,3,6-naphthalenetricarboxylic acid, and compounds in which phthalic acid (or phthalic anhydride) and benzoic acid are linked via a single bond, -O-, _-CH2- , -C( _CH3 ) _2- , -C( _CF3 ) _2- , _-SO2- , or a phenylene group.
These compounds may be compounds in which two carboxy groups are anhydridized (e.g., trimellitic anhydride) or compounds in which at least one carboxy group is halogenated (e.g., trimellitic anhydride chloride).

In formula (PAI-2), R ¹¹¹ , A ² and R ¹¹³ have the same meanings as R ¹¹¹ , A ² and R ¹¹³ in formula (2) above, and preferred embodiments are also the same.

The polyamideimide precursor may further comprise other repeat units.
Examples of the other repeating units include the repeating unit represented by the above formula (2) and the repeating unit represented by the following formula (PAI-1).

In formula (PAI-1), R ¹¹⁶ represents a divalent organic group, and R ¹¹¹ represents a divalent organic group.
In formula (PAI-1), R ¹¹⁶ is exemplified by a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic group, a heteroaromatic group, or a group in which two or more of these are linked by a single bond or a linking group. A linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group is preferred, and an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group is more preferred.
The above-mentioned linking group is preferably -O-, -S-, -C(=O)-, -S(=O) ₂ -, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these, and more preferably -O-, -S-, an alkylene group, a halogenated alkylene group, an arylene group, or a linking group formed by bonding two or more of these.
The alkylene group is preferably an alkylene group having 1 to 20 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and even more preferably an alkylene group having 1 to 4 carbon atoms.
The halogenated alkylene group is preferably a halogenated alkylene group having 1 to 20 carbon atoms, more preferably a halogenated alkylene group having 1 to 10 carbon atoms, and more preferably a halogenated alkylene group having 1 to 4 carbon atoms. In addition, examples of the halogen atom in the halogenated alkylene group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferred. The halogenated alkylene group may have a hydrogen atom or all of the hydrogen atoms may be substituted with halogen atoms, but it is preferred that all of the hydrogen atoms are substituted with halogen atoms. Examples of preferred halogenated alkylene groups include a (ditrifluoromethyl)methylene group.
The arylene group is preferably a phenylene group or a naphthylene group, more preferably a phenylene group, and further preferably a 1,3-phenylene group or a 1,4-phenylene group.

Also, R ¹¹⁶ is preferably derived from a dicarboxylic acid compound or a dicarboxylic acid dihalide compound.
In the present invention, a compound having two carboxy groups is called a dicarboxylic acid compound, and a compound having two halogenated carboxy groups is called a dicarboxylic acid dihalide compound.
The carboxy group in the dicarboxylic acid dihalide compound may be halogenated, but is preferably chlorinated, for example. That is, the dicarboxylic acid dihalide compound is preferably a dicarboxylic acid dichloride compound.
Examples of the optionally halogenated dicarboxylic acid compound or dicarboxylic acid dihalide compound used in the production of a polyamideimide precursor include linear or branched aliphatic, cyclic aliphatic or aromatic dicarboxylic acid compound or dicarboxylic acid dihalide compound.
These dicarboxylic acid compounds or dicarboxylic acid dihalide compounds may be used alone or in combination of two or more.

Specifically, the dicarboxylic acid compound or dicarboxylic acid dihalide compound is preferably a dicarboxylic acid compound or dicarboxylic acid dihalide compound that contains a linear aliphatic group having 2 to 20 carbon atoms, a branched aliphatic group having 3 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a group in which two or more of these are combined by a single bond or a linking group, and more preferably a dicarboxylic acid compound or dicarboxylic acid dihalide compound that contains an aromatic group having 6 to 20 carbon atoms, or a group in which two or more aromatic groups having 6 to 20 carbon atoms are combined by a single bond or a linking group.

Specific examples of dicarboxylic acid compounds include malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, and hexadecafluorosuccinic acid. Examples of the fluorosebacic acid include fluorosebacic acid, 1,9-nonanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanediacid, heneicosanediacid, docosanediacid, tricosanediacid, tetracosanediacid, pentacosanediacid, hexacosanediacid, heptacosanediacid, octacosanediacid, nonacosanediacid, triacontanedioic acid, hentriacontanedioic acid, dotriacontanedioic acid, diglycolic acid, phthalic acid, isophthalic acid, terephthalic acid, 4,4'-biphenylcarboxylic acid, 4,4'-biphenylcarboxylic acid, 4,4'-dicarboxydiphenyl ether, and benzophenone-4,4'-dicarboxylic acid.
Specific examples of the dicarboxylic acid dihalide compound include compounds having a structure in which two carboxy groups in the specific examples of the dicarboxylic acid compound are halogenated.

In formula (PAI-1), R ¹¹¹ has the same meaning as R ¹¹¹ in formula (2) above, and preferred embodiments are also the same.

It is also preferable that the polyamideimide precursor has fluorine atoms in its structure. The fluorine atom content in the polyamideimide precursor is preferably 10% by mass or more, and 20% by mass or less.

In order to improve adhesion to the substrate, the polyamide-imide precursor may be copolymerized with an aliphatic group having a siloxane structure. Specific examples include those using bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. as the diamine component.

An embodiment of the polyamideimide precursor of the present invention includes a repeating unit represented by formula (PAI-2), a repeating unit represented by formula (PAI-1), and a repeating unit represented by formula (2). The total content of the repeating units is preferably 50 mol% or more of all repeating units, more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and is 100 mol% or less. All repeating units in the polyamideimide precursor except for the terminals may be any of the repeating units represented by formula (PAI-2), the repeating units represented by formula (PAI-1), and the repeating units represented by formula (2).
Another embodiment of the polyamideimide precursor of the present invention includes a repeating unit represented by formula (PAI-2) and a repeating unit represented by formula (PAI-1). The total content of the repeating units is preferably 50 mol% or more of all repeating units, more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and is 100 mol% or less. All repeating units in the polyamideimide precursor except for the terminals may be either the repeating unit represented by formula (PAI-2) or the repeating unit represented by formula (PAI-1).

The weight average molecular weight (Mw) of the polyamideimide precursor is preferably 2,000 to 500,000, more preferably 5,000 to 100,000, and even more preferably 10,000 to 50,000. The number average molecular weight (Mn) is preferably 800 to 250,000, more preferably 2,000 to 50,000, and even more preferably 4,000 to 25,000.
The molecular weight dispersity of the polyamideimide precursor is preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the polyamideimide precursor is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less. When the resin composition contains multiple polyamideimide precursors as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one polyamideimide precursor are in the above range. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple polyamideimide precursors as one resin are each in the above range.

[Polyamide-imide]
The polyamideimide used in the present invention may be an alkali-soluble polyamideimide, or may be a polyamideimide that is soluble in a developer containing an organic solvent as a main component.
In this specification, the alkali-soluble polyamideimide refers to a polyamideimide that dissolves at 0.1 g or more in 100 g of a 2.38 mass % aqueous tetramethylammonium solution at 23° C., and from the viewpoint of pattern formability, a polyamideimide that dissolves at 0.5 g or more is preferable, and a polyamideimide that dissolves at 1.0 g or more is more preferable. The upper limit of the dissolution amount is not particularly limited, but it is preferably 100 g or less.
From the viewpoint of the film strength and insulating properties of the resulting organic film, the polyamideimide is preferably a polyamideimide having a plurality of amide bonds and a plurality of imide structures in the main chain.

-Fluorine atom-
From the viewpoint of the film strength of the resulting organic film, the polyamideimide preferably contains a fluorine atom.
The fluorine atom is preferably contained in, for example, R ¹¹⁷ or R ¹¹¹ in the repeating unit represented by formula (PAI-3) described later, and more preferably contained as a fluorinated alkyl group in R ¹¹⁷ or R ¹¹¹ in the repeating unit represented by formula (PAI-3) described later.
The amount of fluorine atoms relative to the total mass of the polyamideimide is preferably 5% by mass or more and 20% by mass or less.

- Ethylenically unsaturated bond -
From the viewpoint of the film strength of the resulting organic film, the polyamideimide may have an ethylenically unsaturated bond.
The polyamideimide may have an ethylenically unsaturated bond at the end of the main chain or in a side chain, but it is preferable that the ethylenically unsaturated bond be in the side chain.
The ethylenically unsaturated bond is preferably radically polymerizable.
The ethylenically unsaturated bond is preferably contained in R ¹¹⁷ or R ¹¹¹ in the repeating unit represented by formula (PAI-3) described later, and more preferably contained as a group having an ethylenically unsaturated bond in R ¹¹⁷ or R ¹¹¹ in the repeating unit represented by formula (PAI-3) described later.
Preferred embodiments of the group having an ethylenically unsaturated bond are the same as those of the group having an ethylenically unsaturated bond in the above-mentioned polyimide.

The amount of ethylenically unsaturated bonds relative to the total mass of the polyamideimide is preferably 0.0001 to 0.1 mol/g, and more preferably 0.001 to 0.05 mol/g.

-Polymerizable group other than ethylenically unsaturated bond-
The polyamideimide may have a polymerizable group other than the ethylenically unsaturated bond.
Examples of the polymerizable group other than the ethylenically unsaturated bond in the polyamideimide include the same groups as the polymerizable group other than the ethylenically unsaturated bond in the above-mentioned polyimide.
A polymerizable group other than an ethylenically unsaturated bond is preferably contained in, for example, R ¹¹¹ in the repeating unit represented by formula (PAI-3) described later.
The amount of polymerizable groups other than ethylenically unsaturated bonds relative to the total mass of the polyamideimide is preferably 0.05 to 10 mol/g, and more preferably 0.1 to 5 mol/g.

- Polarity conversion group -
The polyamideimide may have a polarity conversion group such as an acid-decomposable group. The acid-decomposable group in the polyamideimide is the same as the acid-decomposable group described in R ¹¹³ and R ¹¹⁴ in the above formula (2), and preferred embodiments are also the same.

-Acid value-
When the polyamideimide is subjected to alkaline development, from the viewpoint of improving developability, the acid value of the polyamideimide is preferably 30 mgKOH/g or more, more preferably 50 mgKOH/g or more, and even more preferably 70 mgKOH/g or more.
The acid value is preferably 500 mgKOH/g or less, more preferably 400 mgKOH/g or less, and even more preferably 200 mgKOH/g or less.
Furthermore, when the polyamideimide is subjected to development using a developer containing an organic solvent as a main component (for example, "solvent development"), the acid value of the polyamideimide is preferably from 2 to 35 mgKOH/g, more preferably from 3 to 30 mgKOH/g, and even more preferably from 5 to 20 mgKOH/g.
The acid value is measured by a known method, for example, the method described in JIS K 0070:1992.
In addition, examples of the acid group contained in the polyamideimide include the same groups as the acid groups in the above-mentioned polyimides, and the preferred embodiments are also the same.

-Phenol hydroxy group-
From the viewpoint of ensuring an appropriate development speed with an alkaline developer, the polyamideimide preferably has a phenolic hydroxy group.
The polyamideimide may have a phenolic hydroxy group at the end of the main chain or on a side chain.
The phenolic hydroxy group is preferably contained in, for example, R ¹¹⁷ or R ¹¹¹ in the repeating unit represented by formula (PAI-3) described later.
The amount of phenolic hydroxy groups relative to the total mass of the polyamideimide is preferably 0.1 to 30 mol/g, and more preferably 1 to 20 mol/g.

　式（ＰＡＩ－３）中、Ｒ^１１１及びＲ^１１７はそれぞれ、式（ＰＡＩ－２）中のＲ^１１１及びＲ^１１７と同義であり、好ましい態様も同様である。
　重合性基を有する場合、重合性基は、Ｒ^１１１及びＲ^１１７の少なくとも一方に位置していてもよいし、ポリアミドイミドの末端に位置していてもよい。 The polyamideimide used in the present invention is not particularly limited as long as it is a polymeric compound having an imide structure and an amide bond, but it is preferable that it contains a repeating unit represented by the following formula (PAI-3).

In formula (PAI-3), R ¹¹¹ and R ¹¹⁷ have the same meanings as R ¹¹¹ and R ¹¹⁷ in formula (PAI-2), respectively, and preferred embodiments are also the same.
When the polyamide-imide has a polymerizable group, the polymerizable group may be located at least one of R ¹¹¹ and R ¹¹⁷ , or may be located at an end of the polyamide-imide.

In addition, to improve the storage stability of the resin composition, it is preferable to cap the main chain ends of the polyamideimide with a terminal capping agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound. The preferred aspects of the terminal capping agent are the same as the preferred aspects of the terminal capping agent for the polyimide described above.

-Imidization rate (ring closure rate)-
The imidization rate of polyamideimide (also referred to as "ring closure rate") is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more, from the viewpoints of the film strength, insulating properties, etc. of the resulting organic film.
There is no particular upper limit to the imidization rate, and it is sufficient if it is 100% or less.
The imidization rate is measured in the same manner as the ring closure rate of the polyimide described above.

The polyamideimide may contain repeating units represented by the above formula (PAI-3) in which the combination of R ¹¹¹ and R ¹¹⁷ is the same, or may contain repeating units represented by the above formula (PAI-3) containing two or more different combinations of R ¹¹¹ and R ^117. Furthermore, the polyamideimide may contain other types of repeating units in addition to the repeating units represented by the above formula (PAI-3). Examples of other types of repeating units include the repeating units represented by the above formula (PAI-1) or formula (PAI-2).

Polyamideimide can be synthesized, for example, by obtaining a polyamideimide precursor by a known method and then completely imidizing it using a known imidization reaction method, or by stopping the imidization reaction midway and introducing a partial imide structure, or by blending a completely imidized polymer with the polyamideimide precursor to introduce a partial imide structure.

The weight average molecular weight (Mw) of the polyamideimide is preferably 5,000 to 70,000, more preferably 8,000 to 50,000, and even more preferably 10,000 to 30,000. By making the weight average molecular weight 5,000 or more, the folding resistance of the film after curing can be improved. In order to obtain an organic film with excellent mechanical properties, the weight average molecular weight is particularly preferably 20,000 or more.
The number average molecular weight (Mn) of the polyamideimide is preferably from 800 to 250,000, more preferably from 2,000 to 50,000, and even more preferably from 4,000 to 25,000.
The polyamideimide has a molecular weight dispersity of preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the polyamideimide is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
In addition, when the resin composition contains multiple types of polyamideimides as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one type of polyamideimide are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple types of polyamideimides as one resin are each within the above ranges.

[Method for producing polyimide precursor, etc.]
The polyimide precursor or the like can be obtained by, for example, a method of reacting a tetracarboxylic dianhydride with a diamine at low temperature, a method of reacting a tetracarboxylic dianhydride with a diamine at low temperature to obtain a polyamic acid, and then esterifying the polyamic acid using a condensing agent or an alkylating agent, a method of obtaining a diester from a tetracarboxylic dianhydride with an alcohol, and then reacting the diamine in the presence of a condensing agent, a method of obtaining a diester from a tetracarboxylic dianhydride with an alcohol, and then acid-halogenating the remaining dicarboxylic acid using a halogenating agent, and then reacting the diamine, etc. Among the above-mentioned production methods, the method of obtaining a diester from a tetracarboxylic dianhydride with an alcohol, and then acid-halogenating the remaining dicarboxylic acid using a halogenating agent, and then reacting the diamine, is more preferable.
Examples of the condensing agent include dicyclohexylcarbodiimide, diisopropylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1-carbonyldioxy-di-1,2,3-benzotriazole, N,N'-disuccinimidyl carbonate, and trifluoroacetic anhydride.
Examples of the alkylating agent include N,N-dimethylformamide dimethyl acetal, N,N-dimethylformamide diethyl acetal, N,N-dialkylformamide dialkyl acetal, trimethyl orthoformate, and triethyl orthoformate.
Examples of the halogenating agent include thionyl chloride, oxalyl chloride, phosphorus oxychloride, and the like.
In the method for producing a polyimide precursor or the like, it is preferable to use an organic solvent during the reaction. The organic solvent may be one type or two or more types.
The organic solvent can be appropriately selected depending on the raw material, and examples thereof include pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, N-ethylpyrrolidone, ethyl propionate, dimethylacetamide, dimethylformamide, tetrahydrofuran, and γ-butyrolactone.
In the method for producing a polyimide precursor or the like, it is preferable to add a basic compound during the reaction. The basic compound may be one type or two or more types.
The basic compound can be appropriately selected depending on the raw material, and examples thereof include triethylamine, diisopropylethylamine, pyridine, 1,8-diazabicyclo[5.4.0]undec-7-ene, and N,N-dimethyl-4-aminopyridine.

-End-capping agent-
In the method for producing a polyimide precursor or the like, in order to further improve storage stability, it is preferable to cap the carboxylic acid anhydride, acid anhydride derivative, or amino group remaining at the resin terminal of the polyimide precursor or the like. When capping the carboxylic acid anhydride and acid anhydride derivative remaining at the resin terminal, examples of the terminal capping agent include monoalcohols, phenols, thiols, thiophenols, monoamines, etc., and it is more preferable to use monoalcohols, phenols, or monoamines in terms of reactivity and film stability. Preferred examples of monoalcohol compounds include primary alcohols such as methanol, ethanol, propanol, butanol, hexanol, octanol, dodecinol, benzyl alcohol, 2-phenylethanol, 2-methoxyethanol, 2-chloromethanol, and furfuryl alcohol; secondary alcohols such as isopropanol, 2-butanol, cyclohexyl alcohol, cyclopentanol, and 1-methoxy-2-propanol; and tertiary alcohols such as t-butyl alcohol and adamantane alcohol. Preferred phenolic compounds include phenols such as phenol, methoxyphenol, methylphenol, naphthalene-1-ol, naphthalene-2-ol, and hydroxystyrene. Preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, Examples of such an acid include 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, and 4-aminothiophenol. Two or more of these may be used, and a plurality of different terminal groups may be introduced by reacting a plurality of terminal blocking agents.
In addition, when the amino group at the resin terminal is blocked, it is possible to block it with a compound having a functional group capable of reacting with the amino group. Preferred blocking agents for the amino group include carboxylic acid anhydrides, carboxylic acid chlorides, carboxylic acid bromides, sulfonic acid chlorides, sulfonic acid anhydrides, sulfonic acid carboxylic acid anhydrides, and the like, and more preferred are carboxylic acid anhydrides and carboxylic acid chlorides. Preferred compounds of carboxylic acid anhydrides include acetic anhydride, propionic anhydride, oxalic anhydride, succinic anhydride, maleic anhydride, phthalic anhydride, benzoic anhydride, 5-norbornene-2,3-dicarboxylic acid anhydride, and the like. Preferred examples of the carboxylic acid chloride include acetyl chloride, acrylic acid chloride, propionyl chloride, methacrylic acid chloride, pivaloyl chloride, cyclohexanecarbonyl chloride, 2-ethylhexanoyl chloride, cinnamoyl chloride, 1-adamantanecarbonyl chloride, heptafluorobutyryl chloride, stearic acid chloride, and benzoyl chloride.

-Solid precipitation-
The method for producing a polyimide precursor or the like may include a step of precipitating a solid. Specifically, after filtering off the water-absorbing by-product of the dehydration condensation agent coexisting in the reaction solution as necessary, the obtained polymer component is poured into a poor solvent such as water, aliphatic lower alcohol, or a mixture thereof, and the polymer component is precipitated as a solid, and then dried to obtain a polyimide precursor or the like. In order to improve the degree of purification, the polyimide precursor or the like may be repeatedly subjected to operations such as redissolving, reprecipitation, and drying. Furthermore, the method may include a step of removing ionic impurities using an ion exchange resin.

〔Content〕
The content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, and even more preferably 50% by mass or more, based on the total solid content of the resin composition. The content of the resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, even more preferably 98% by mass or less, even more preferably 97% by mass or less, and even more preferably 95% by mass or less, based on the total solid content of the resin composition.
The resin composition of the present invention may contain only one specific resin, or may contain two or more specific resins. When two or more specific resins are contained, the total amount is preferably within the above range.

It is also preferable that the resin composition of the present invention contains at least two types of resins.
Specifically, the resin composition of the present invention may contain a total of two or more types of the specific resin and the other resins described below, or may contain two or more types of specific resins, but it is preferable that the resin composition contains two or more types of specific resins.
When the resin composition of the present invention contains two or more specific resins, it preferably contains, for example, two or more polyimide precursors having different dianhydride-derived structures (R ¹¹⁵ in the above formula (2)).

<Other resins>
The resin composition of the present invention may contain the above-mentioned specific resin and another resin different from the specific resin (hereinafter, simply referred to as "another resin").
Examples of other resins include phenol resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins.
For example, by further adding a (meth)acrylic resin, a resin composition having excellent coatability can be obtained, and a pattern (cured product) having excellent solvent resistance can be obtained.
For example, instead of or in addition to the polymerizable compound described later, by adding a (meth)acrylic resin having a weight average molecular weight of 20,000 or less and a high polymerizable group value (for example, the molar content of polymerizable groups per 1 g of resin is 1×10 ⁻³ mol/g or more) to the resin composition, the coatability of the resin composition and the solvent resistance of the pattern (cured product) can be improved.

When the resin composition of the present invention contains other resins, the content of the other resins is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, even more preferably 1 mass% or more, still more preferably 2 mass% or more, even more preferably 5 mass% or more, and even more preferably 10 mass% or more, based on the total solid content of the resin composition.
The content of other resins in the resin composition of the present invention is preferably 80 mass% or less, more preferably 75 mass% or less, even more preferably 70 mass% or less, still more preferably 60 mass% or less, and even more preferably 50 mass% or less, based on the total solid content of the resin composition.
As a preferred embodiment of the resin composition of the present invention, the content of the other resin may be low. In the above embodiment, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on the total solid content of the resin composition. The lower limit of the content is not particularly limited, and may be 0% by mass or more.
The resin composition of the present invention may contain only one type of other resin, or may contain two or more types. When two or more types are contained, the total amount is preferably within the above range.

<Polymerizable Compound>
The resin composition of the present invention preferably contains a polymerizable compound.
The polymerizable compound may include a radical crosslinking agent or other crosslinking agents.

[Radical Crosslinking Agent]
The resin composition of the present invention preferably contains a radical crosslinking agent.
The radical crosslinking agent is a compound having a radical polymerizable group. The radical polymerizable group is preferably a group containing an ethylenically unsaturated bond. Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group.
Among these, a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferred, and from the viewpoint of reactivity, a (meth)acryloyl group is more preferred.

The radical crosslinking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more ethylenically unsaturated bonds. The radical crosslinking agent may have three or more ethylenically unsaturated bonds.
As the compound having two or more ethylenically unsaturated bonds, a compound having 2 to 15 ethylenically unsaturated bonds is preferable, a compound having 2 to 10 ethylenically unsaturated bonds is more preferable, and a compound having 2 to 6 ethylenically unsaturated bonds is even more preferable.
From the viewpoint of the film strength of the obtained pattern (cured product), it is also preferable that the resin composition of the present invention contains a compound having two ethylenically unsaturated bonds and the above-mentioned compound having three or more ethylenically unsaturated bonds.

The molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less. The lower limit of the molecular weight of the radical crosslinking agent is preferably 100 or more.

Specific examples of radical crosslinking agents include unsaturated carboxylic acids (e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) and their esters and amides, preferably esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyvalent amine compounds. In addition, addition reaction products of unsaturated carboxylic acid esters or amides having nucleophilic substituents such as hydroxyl groups, amino groups, and sulfanyl groups with monofunctional or polyfunctional isocyanates or epoxies, and dehydration condensation reaction products of monofunctional or polyfunctional carboxylic acids are also preferably used. In addition, addition reaction products of unsaturated carboxylic acid esters or amides having electrophilic substituents such as isocyanate groups and epoxy groups with monofunctional or polyfunctional alcohols, amines, and thiols, and substitution reaction products of unsaturated carboxylic acid esters or amides having eliminable substituents such as halogeno groups and tosyloxy groups with monofunctional or polyfunctional alcohols, amines, and thiols are also suitable. As another example, it is also possible to use a compound group in which the above unsaturated carboxylic acid is replaced with an unsaturated phosphonic acid, a vinylbenzene derivative such as styrene, a vinyl ether, an allyl ether, etc. Specific examples can be found in paragraphs 0113 to 0122 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

The radical crosslinking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure. Examples of compounds having a boiling point of 100°C or higher under normal pressure include the compounds described in paragraph 0203 of WO 2021/112189, the contents of which are incorporated herein by reference.

Preferable radical crosslinking agents other than those mentioned above include the radical polymerizable compounds described in paragraphs 0204 to 0208 of WO 2021/112189, the contents of which are incorporated herein by reference.

The radical crosslinking agent is preferably dipentaerythritol triacrylate (commercially available products include KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available products include KAYARAD D-320 (manufactured by Nippon Kayaku Co., Ltd.) and A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)), dipentaerythritol penta(meth)acrylate (commercially available products include KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol hexa(meth)acrylate (commercially available products include KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), and structures in which the (meth)acryloyl groups are bonded via ethylene glycol residues or propylene glycol residues. Oligomer types of these can also be used.

Commercially available radical crosslinking agents include, for example, SR-494, a tetrafunctional acrylate with four ethyleneoxy chains, SR-209, 231, and 239, which are difunctional methacrylates with four ethyleneoxy chains (all manufactured by Sartomer Corporation), DPCA-60, a hexafunctional acrylate with six pentyleneoxy chains, TPA-330, a trifunctional acrylate with three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers. Examples include UAS-10 and UAB-140 (all manufactured by Nippon Paper Industries Co., Ltd.), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, and UA-7200 (all manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, and AI-600 (all manufactured by Kyoeisha Chemical Co., Ltd.), and Blenmar PME400 (manufactured by NOF Corp.).

As radical crosslinking agents, urethane acrylates such as those described in JP-B-48-041708, JP-A-51-037193, JP-B-02-032293, and JP-B-02-016765, and urethane compounds having an ethylene oxide skeleton described in JP-B-58-049860, JP-B-56-017654, JP-B-62-039417, and JP-B-62-039418 are also suitable. As radical crosslinking agents, compounds having an amino structure or sulfide structure in the molecule, as described in JP-A-63-277653, JP-A-63-260909, and JP-A-01-105238, can also be used.

The radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphate group. The radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent in which an acid group is provided by reacting an unreacted hydroxy group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic anhydride. Particularly preferred is a radical crosslinking agent in which an acid group is provided by reacting an unreacted hydroxy group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic anhydride, in which the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol. Examples of commercially available products include polybasic acid modified acrylic oligomers manufactured by Toagosei Co., Ltd., such as M-510 and M-520.

The acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH/g, more preferably 1 to 100 mgKOH/g. If the acid value of the radical crosslinking agent is within the above range, the agent has excellent handling properties during manufacturing and developability. In addition, the agent has good polymerizability. The acid value is measured in accordance with the description of JIS K 0070:1992.

As the radical crosslinking agent, a radical crosslinking agent having at least one bond selected from the group consisting of a urea bond and a urethane bond (hereinafter, also referred to as "crosslinking agent U") is also preferred.
In the present invention, the urea bond is a bond represented by *-NR ^N -C(=O)-NR ^N -*, where each R ^N independently represents a hydrogen atom or a monovalent organic group, and each * represents a bonding site with a carbon atom.
In the present invention, a urethane bond is a bond represented by *--O--C(.dbd.O)-- ^NR.sub.N --*, where ^R.sub.N represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom.
When the resin composition contains the crosslinking agent U, the chemical resistance, resolution, and the like may be improved.
The mechanism by which the above-mentioned effect is obtained is unclear; however, for example, it is considered that a part of the crosslinking agent U is thermally decomposed during curing by heating or the like, thereby generating amines, etc., and the amines etc. promote the cyclization of the precursor of the cyclized resin, such as a polyimide precursor.
The crosslinking agent U may have only one urea bond or one urethane bond, may have one or more urea bonds and one or more urethane bonds, may have no urethane bonds but two or more urea bonds, or may have no urea bonds but two or more urethane bonds.
The total number of urea bonds and urethane bonds in the crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.
When the crosslinking agent U has no urethane bond, the number of urea bonds in the crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.
When crosslinking agent U has no urea bond, the number of urethane bonds in crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.

The radical polymerizable group in the crosslinking agent U is not particularly limited, and examples thereof include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group. Of these, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferred, and a (meth)acryloxy group is more preferred.
When the crosslinking agent U has two or more radically polymerizable groups, the structures of the respective radically polymerizable groups may be the same or different.
The number of radical polymerizable groups in the crosslinking agent U may be only one or may be two or more, and is preferably 1 to 10, more preferably 1 to 6, and particularly preferably 1 to 4.
The radically polymerizable group value (mass of compound per mole of radically polymerizable group) in the crosslinking agent U is preferably 150 to 400 g/mol.
From the viewpoint of chemical resistance of the cured product, the lower limit of the radically polymerizable group value is more preferably 200 g/mol or more, even more preferably 210 g/mol or more, still more preferably 220 g/mol or more, even more preferably 230 g/mol or more, still more preferably 240 g/mol or more, and particularly preferably 250 g/mol or more.
From the viewpoint of developability, the upper limit of the radically polymerizable group value is more preferably 350 g/mol or less, further preferably 330 g/mol or less, and particularly preferably 300 g/mol or less.
In particular, the polymerizable group value of the crosslinking agent U is preferably from 210 to 400 g/mol, and more preferably from 220 to 400 g/mol.

　式（Ｕ－１）中、Ｒ^Ｕ１は水素原子又は１価の有機基であり、Ａは－Ｏ－又は－ＮＲ^Ｎ－であり、Ｒ^Ｎは水素原子又は１価の有機基であり、Ｚ^Ｕ１はｍ価の有機基であり、Ｚ^Ｕ２はｎ＋１価の有機基であり、Ｘはラジカル重合性基であり、ｎは１以上の整数であり、ｍは１以上の整数である。 The crosslinking agent U preferably has a structure represented by the following formula (U-1).

In formula (U-1), R ^U1 is a hydrogen atom or a monovalent organic group, A is -O- or -NR ^N -, R ^N is a hydrogen atom or a monovalent organic group, Z ^U1 is an m-valent organic group, Z ^U2 is an (n+1)-valent organic group, X is a radical polymerizable group, n is an integer of 1 or more, and m is an integer of 1 or more.

R ^U1 is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, and more preferably a hydrogen atom.
R ^{3 N} is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, and more preferably a hydrogen atom.
Z ^U1 is preferably a hydrocarbon group, -O-, -C(=O)-, -S-, -S(=O) ₂ -, -NR ^N -, or a group in which two or more of these are bonded together, and more preferably a hydrocarbon group, or a group in which a hydrocarbon group is bonded to at least one group selected from the group consisting of -O-, -C(=O)-, -S-, -S(=O) ₂ -, and -NR ^N -.
The hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and even more preferably a hydrocarbon group having 16 or less carbon atoms. Examples of the hydrocarbon group include a saturated aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a group represented by a combination thereof. R ^N represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom or a methyl group.
Z ^U2 is preferably a hydrocarbon group, -O-, -C(=O)-, -S-, -S(=O) ₂ -, -NR ^N -, or a group in which two or more of these are bonded together, and more preferably a hydrocarbon group, or a group in which a hydrocarbon group is bonded to at least one group selected from the group consisting of -O-, -C(=O)-, -S-, -S(=O) ₂ -, and -NR ^N -.
The hydrocarbon group includes the same as those exemplified for ^ZU1 , and preferred embodiments are also the same.
X is not particularly limited, and examples thereof include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group. Of these, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferable, and a (meth)acryloxy group is more preferable.
n is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, even more preferably 1 or 2, and particularly preferably 1.
m is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, and even more preferably 1 or 2.

It is also preferred that the cross-linking agent U has at least one of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group.
From the viewpoint of the chemical resistance of the resulting cured film, the hydroxy group may be an alcoholic hydroxy group or a phenolic hydroxy group, but is preferably an alcoholic hydroxy group.
From the viewpoint of the chemical resistance of the obtained cured film, the alkyleneoxy group is preferably an alkyleneoxy group having 2 to 20 carbon atoms, more preferably an alkyleneoxy group having 2 to 10 carbon atoms, even more preferably an alkyleneoxy group having 2 to 4 carbon atoms, still more preferably an ethylene group or propylene group, and particularly preferably an ethylene group.
The alkyleneoxy group may be contained as a polyalkyleneoxy group in the crosslinking agent U. In this case, the number of repetitions of the alkyleneoxy group is preferably 2 to 10, and more preferably 2 to 6.
The amide group refers to a bond represented by -C(=O)-NR ^N -, where R ^N is as described above. When crosslinking agent U has an amide group, crosslinking agent U can contain it, for example, as a group represented by R-C(=O)-NR ^N -*, or a group represented by *-C(=O)-NR ^N -R. R represents a hydrogen atom or a monovalent substituent, preferably a hydrogen atom or a hydrocarbon group, and more preferably a hydrogen atom, an alkyl group, or an aromatic hydrocarbon group.
The crosslinking agent U may have, in the molecule, two or more structures selected from the group consisting of a hydroxy group, an alkyleneoxy group (when a polyalkyleneoxy group is constituted, the group is a polyalkyleneoxy group), an amide group, and a cyano group. An embodiment having only one such structure in the molecule is also preferred.
The hydroxy group, alkyleneoxy group, amide group and cyano group may be present at any position of the crosslinking agent U. From the viewpoint of chemical resistance, however, it is also preferable that the crosslinking agent U is such that at least one selected from the group consisting of the hydroxy group, alkyleneoxy group, amide group and cyano group and at least one radical polymerizable group contained in the crosslinking agent U are linked via a linking group containing a urea bond or a urethane bond (hereinafter, also referred to as "linking group L2-1").
In particular, when the crosslinking agent U contains only one radically polymerizable group, it is preferable that the radically polymerizable group contained in the crosslinking agent U and at least one selected from the group consisting of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group are linked via a linking group containing a urea bond or a urethane bond (hereinafter also referred to as "linking group L2-2").
When the crosslinking agent U contains an alkyleneoxy group (however, when a polyalkyleneoxy group is constituted, a polyalkyleneoxy group) and has the linking group L2-1 or the linking group L2-2, the structure bonded to the side of the alkyleneoxy group (however, when a polyalkyleneoxy group is constituted, a polyalkyleneoxy group) opposite to the linking group L2-1 or the linking group L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof. As the hydrocarbon group, a hydrocarbon group having 20 or less carbon atoms is preferable, a hydrocarbon group having 18 or less carbon atoms is more preferable, and a hydrocarbon group having 16 or less carbon atoms is even more preferable. As the hydrocarbon group, a saturated aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a group represented by a bond thereof can be mentioned. In addition, a preferred embodiment of the radically polymerizable group is the same as the preferred embodiment of the radically polymerizable group in the crosslinking agent U described above.
When the crosslinking agent U contains an amide group and has the linking group L2-1 or the linking group L2-2, the structure bonded to the side of the amide group opposite to the linking group L2-1 or the linking group L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof. The hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and even more preferably a hydrocarbon group having 16 or less carbon atoms. In addition, examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a bond between these groups. A preferred embodiment of the radically polymerizable group is the same as the preferred embodiment of the radically polymerizable group in the crosslinking agent U described above. In addition, in the above embodiment, the carbon atom side of the amide group may be bonded to the linking group L2-1 or the linking group L2-2, or the nitrogen atom side of the amide group may be bonded to the linking group L2-1 or the linking group L2-2.
Among these, from the viewpoints of adhesion to the substrate, chemical resistance, and suppression of Cu voids, it is preferable that the crosslinking agent U has a hydroxy group.

From the viewpoint of compatibility with the specific resin, the crosslinking agent U preferably contains an aromatic group.
The aromatic group is preferably directly bonded to a urea bond or a urethane bond contained in the crosslinking agent U. When the crosslinking agent U contains two or more urea bonds or urethane bonds, it is preferable that one of the urea bonds or urethane bonds is directly bonded to the aromatic group.
The aromatic group may be an aromatic hydrocarbon group or an aromatic heterocyclic group, or may have a structure in which these form a condensed ring, but is preferably an aromatic hydrocarbon group.
The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, and even more preferably a group in which two or more hydrogen atoms have been removed from a benzene ring structure.
The aromatic heterocyclic group is preferably a 5-membered or 6-membered aromatic heterocyclic group. Examples of the aromatic heterocyclic ring in such an aromatic heterocyclic group include pyrrole, imidazole, triazole, tetrazole, pyrazole, furan, thiophene, oxazole, isoxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, triazine, etc. These rings may be further condensed with other rings, such as indole and benzimidazole.
The heteroatom contained in the aromatic heterocyclic group is preferably a nitrogen atom, an oxygen atom or a sulfur atom.
The aromatic group is preferably contained in a linking group that links two or more radically polymerizable groups and contains a urea bond or a urethane bond, or a linking group that links at least one selected from the group consisting of the above-mentioned hydroxy group, alkyleneoxy group, amide group, and cyano group to at least one radically polymerizable group contained in the crosslinking agent U.

The number of atoms (linking chain length) between the urea bond or urethane bond and the radical polymerizable group in the crosslinking agent U is not particularly limited, but is preferably 30 or less, more preferably 2 to 20, and even more preferably 2 to 10.
When the crosslinking agent U contains two or more urea bonds or urethane bonds in total, when it contains two or more radically polymerizable groups, or when it contains two or more urea bonds or urethane bonds and two or more radically polymerizable groups, the minimum number of atoms (linking chain length) between the urea bond or urethane bond and the radically polymerizable group may be within the above range.
In this specification, the "number of atoms (linking chain length) between a urea bond or a urethane bond and a polymerizable group" refers to the chain of atoms on the path connecting two atoms or groups of atoms to be linked that links these objects with the shortest length (minimum number of atoms). For example, in the structure represented by the following formula, the number of atoms (linking chain length) between the urea bond and the radical polymerizable group (methacryloyloxy group) is 2.

[Axis of symmetry]
It is also preferred that the crosslinking agent U is a compound having a structure that does not have an axis of symmetry.
The fact that the crosslinking agent U does not have an axis of symmetry means that the compound is a bilaterally asymmetric compound that does not have an axis that would produce an identical molecule to the original molecule by rotating the entire compound. In addition, when the structural formula of the crosslinking agent U is written on paper, the fact that the crosslinking agent U does not have an axis of symmetry means that the structural formula of the crosslinking agent U cannot be written in a form that has an axis of symmetry.
It is believed that since the crosslinking agent U does not have an axis of symmetry, aggregation of the crosslinking agents U within the composition film is suppressed.

[Molecular weight]
The molecular weight of the crosslinking agent U is preferably 100-2,000, more preferably 150-1500, and even more preferably 200-900.

The method for producing the crosslinking agent U is not particularly limited, but it can be obtained, for example, by reacting a compound having a radical polymerizable compound and an isocyanate group with a compound having at least one of a hydroxy group or an amino group.

Specific examples of the crosslinking agent U are shown below, but the crosslinking agent U is not limited thereto.

From the viewpoints of pattern resolution and film stretchability, it is preferable to use a difunctional methacrylate or acrylate for the resin composition.
Specific examples of the compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG 200 dimethacrylate, PEG 600 diacrylate, PEG 600 dimethacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexyl ... Xanediol diacrylate, 1,6-hexanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, EO (ethylene oxide) adduct diacrylate of bisphenol A, EO adduct dimethacrylate of bisphenol A, PO (propylene oxide) adduct diacrylate of bisphenol A, PO adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, isocyanuric acid EO-modified diacrylate, isocyanuric acid EO-modified dimethacrylate, other bifunctional acrylates having a urethane bond, and bifunctional methacrylates having a urethane bond can be used. Two or more of these can be mixed and used as necessary.
For example, PEG200 diacrylate refers to polyethylene glycol diacrylate having a formula weight of about 200 for the polyethylene glycol chain.
In the resin composition of the present invention, from the viewpoint of suppressing warpage of the pattern (cured product), a monofunctional radical crosslinking agent can be preferably used as the radical crosslinking agent. As the monofunctional radical crosslinking agent, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and other (meth)acrylic acid derivatives, N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam, and allyl glycidyl ether are preferably used. As the monofunctional radical crosslinking agent, a compound having a boiling point of 100° C. or more under normal pressure is also preferred in order to suppress volatilization before exposure.
Other examples of the difunctional or higher radical crosslinking agent include allyl compounds such as diallyl phthalate and triallyl trimellitate.

When a radical crosslinking agent is contained, the content of the radical crosslinking agent is preferably more than 0 mass% and not more than 60 mass% based on the total solid content of the resin composition. The lower limit is more preferably 5 mass% or more. The upper limit is more preferably 50 mass% or less, and even more preferably 30 mass% or less.

The radical crosslinking agent may be used alone or in combination of two or more. When two or more types are used in combination, it is preferable that the total amount is within the above range.

[Other crosslinking agents]
The resin composition of the present invention also preferably contains another crosslinking agent different from the above-mentioned radical crosslinking agent.
The other crosslinking agent refers to a crosslinking agent other than the above-mentioned radical crosslinking agent, and is preferably a compound having, in its molecule, a plurality of groups that promote a reaction to form a covalent bond with another compound in the composition or a reaction product thereof upon exposure to light by a photoacid generator or a photobase generator, and is preferably a compound having, in its molecule, a plurality of groups that promote, by the action of an acid or a base, a reaction to form a covalent bond with another compound in the composition or a reaction product thereof.
The acid or base is preferably an acid or base generated from a photoacid generator or a photobase generator in the exposure step.
As the other crosslinking agent, a compound having at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group is preferred, and a compound having a structure in which at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group is directly bonded to a nitrogen atom is more preferred.
Other crosslinking agents include, for example, compounds having a structure in which an amino group-containing compound such as melamine, glycoluril, urea, alkylene urea, or benzoguanamine is reacted with formaldehyde or formaldehyde and alcohol, and the hydrogen atom of the amino group is replaced with an acyloxymethyl group, a methylol group, an ethylol group, or an alkoxymethyl group.The method for producing these compounds is not particularly limited, and any compound having the same structure as the compound produced by the above method may be used.The methylol groups of these compounds may be self-condensed to produce an oligomer.
As the above amino group-containing compound, a crosslinking agent using melamine is called a melamine-based crosslinking agent, a crosslinking agent using glycoluril, urea or alkylene urea is called a urea-based crosslinking agent, a crosslinking agent using alkylene urea is called an alkylene urea-based crosslinking agent, and a crosslinking agent using benzoguanamine is called a benzoguanamine-based crosslinking agent.
Among these, the resin composition of the present invention preferably contains at least one compound selected from the group consisting of urea-based crosslinking agents and melamine-based crosslinking agents, and more preferably contains at least one compound selected from the group consisting of glycoluril-based crosslinking agents and melamine-based crosslinking agents described below.

Examples of the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group in the present invention include compounds in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic group or a nitrogen atom of the following urea structure, or on a triazine.
The alkoxymethyl group or acyloxymethyl group of the above compound preferably has 2 to 5 carbon atoms, more preferably 2 or 3 carbon atoms, and even more preferably 2 carbon atoms.
The total number of alkoxymethyl groups and acyloxymethyl groups contained in the above compound is preferably 1 to 10, more preferably 2 to 8, and particularly preferably 3 to 6.
The molecular weight of the compound is preferably 1,500 or less, and more preferably 180 to 1,200.

R ₁₀₀ represents an alkyl group or an acyl group.
R ₁₀₁ and R ₁₀₂ each independently represent a monovalent organic group and may be bonded to each other to form a ring.

Examples of compounds in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic group include compounds represented by the following general formula:

In the formula, X represents a single bond or a divalent organic group, each of _R104 independently represents an alkyl group or an acyl group, and _R103 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, or ^a group that decomposes by the action of an acid to produce an alkali-soluble group (for example, a group that is eliminated by the action of an acid, a group represented by -C( ^R4 ) _2COOR5 (each of ^R4 independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and ^R5 represents a group that is eliminated by the action of an acid)).
Each R ₁₀₅ independently represents an alkyl group or an alkenyl group; each of a, b, and c independently represents 1 to 3; d represents 0 to 4; e represents 0 to 3; f represents 0 to 3; a+d is 5 or less; b+e is 4 or less; and c+f is 4 or less.
Examples of R ⁵ in a group that decomposes under the action of an acid to generate an alkali-soluble group, a group that is eliminated by the action of an acid, and a group represented by -C(R ⁴ ) ₂ COOR ⁵ include -C(R ₃₆ )(R ₃₇ )(R ₃₈ ), -C(R ₃₆ )(R ₃₇ )(OR ₃₉ ), -C(R ₀₁ )(R ₀₂ )(OR ₃₉ ), etc.
In the formula, R ₃₆ to R ₃₉ each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group, and R ₃₆ and R ₃₇ may be bonded to each other to form a ring.
The alkyl group is preferably an alkyl group having 1 to 10 carbon atoms, and more preferably an alkyl group having 1 to 5 carbon atoms.
The alkyl group may be either linear or branched.
The above cycloalkyl group is preferably a cycloalkyl group having 3 to 12 carbon atoms, and more preferably a cycloalkyl group having 3 to 8 carbon atoms.
The cycloalkyl group may be a monocyclic structure or a polycyclic structure such as a condensed ring.
The aryl group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, and more preferably a phenyl group.
The above aralkyl group is preferably an aralkyl group having 7 to 20 carbon atoms, and more preferably an aralkyl group having 7 to 16 carbon atoms.
The above aralkyl group is intended to be an aryl group substituted with an alkyl group, and preferred embodiments of these alkyl and aryl groups are the same as those of the alkyl and aryl groups.
The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms, and more preferably an alkenyl group having 3 to 16 carbon atoms.
These groups may further have known substituents.

R ₀₁ and R ₀₂ each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group.

The group that decomposes under the action of an acid to generate an alkali-soluble group, or the group that is eliminated under the action of an acid, is preferably a tertiary alkyl ester group, an acetal group, a cumyl ester group, an enol ester group, etc. More preferably, it is a tertiary alkyl ester group or an acetal group.

Furthermore, as a compound having at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group, a compound having at least one group selected from the group consisting of a urea bond and a urethane bond is also preferred. The preferred aspects of the above compounds are the same as the preferred aspects of the crosslinker U, except that the polymerizable group is not a radically polymerizable group but is at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, an ethylol group, and an alkoxymethyl group.

Specific examples of compounds having at least one group selected from the group consisting of an acyloxymethyl group, a methylol group, and an ethylol group include the following structures. Compounds having an acyloxymethyl group include compounds in which the alkoxymethyl group in the following compounds has been changed to an acyloxymethyl group. Compounds having an alkoxymethyl group or acyloxymethyl in the molecule include, but are not limited to, the following compounds.

The compound containing at least one of an alkoxymethyl group and an acyloxymethyl group may be a commercially available compound or may be synthesized by a known method.
From the viewpoint of heat resistance, compounds in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic ring or a triazine ring are preferred.

Specific examples of melamine-based crosslinking agents include hexamethoxymethylmelamine, hexaethoxymethylmelamine, hexapropoxymethylmelamine, and hexabutoxybutylmelamine.

Specific examples of urea-based crosslinking agents include glycoluril-based crosslinking agents such as monohydroxymethylated glycoluril, dihydroxymethylated glycoluril, trihydroxymethylated glycoluril, tetrahydroxymethylated glycoluril, monomethoxymethylated glycoluril, dimethoxymethylated glycoluril, trimethoxymethylated glycoluril, tetramethoxymethylated glycoluril, monoethoxymethylated glycoluril, diethoxymethylated glycoluril, triethoxymethylated glycoluril, tetraethoxymethylated glycoluril, monopropoxymethylated glycoluril, dipropoxymethylated glycoluril, tripropoxymethylated glycoluril, tetrapropoxymethylated glycoluril, monobutoxymethylated glycoluril, dibutoxymethylated glycoluril, tributoxymethylated glycoluril, and tetrabutoxymethylated glycoluril;
Urea-based crosslinking agents such as bismethoxymethylurea, bisethoxymethylurea, bispropoxymethylurea, and bisbutoxymethylurea;
ethyleneurea-based crosslinking agents such as monohydroxymethylated ethyleneurea or dihydroxymethylated ethyleneurea, monomethoxymethylated ethyleneurea, dimethoxymethylated ethyleneurea, monoethoxymethylated ethyleneurea, diethoxymethylated ethyleneurea, monopropoxymethylated ethyleneurea, dipropoxymethylated ethyleneurea, monobutoxymethylated ethyleneurea, or dibutoxymethylated ethyleneurea;
propylene urea-based crosslinking agents such as monohydroxymethylated propylene urea, dihydroxymethylated propylene urea, monomethoxymethylated propylene urea, dimethoxymethylated propylene urea, monoethoxymethylated propylene urea, diethoxymethylated propylene urea, monopropoxymethylated propylene urea, dipropoxymethylated propylene urea, monobutoxymethylated propylene urea, or dibutoxymethylated propylene urea;
Examples thereof include 1,3-di(methoxymethyl)-4,5-dihydroxy-2-imidazolidinone and 1,3-di(methoxymethyl)-4,5-dimethoxy-2-imidazolidinone.

Specific examples of benzoguanamine-based crosslinking agents include monohydroxymethylated benzoguanamine, dihydroxymethylated benzoguanamine, trihydroxymethylated benzoguanamine, tetrahydroxymethylated benzoguanamine, monomethoxymethylated benzoguanamine, dimethoxymethylated benzoguanamine, trimethoxymethylated benzoguanamine, tetramethoxymethylated benzoguanamine, monoethoxymethylated benzoguanamine, diethoxymethylated benzoguanamine, triethoxymethylated benzoguanamine, tetraethoxymethylated benzoguanamine, monopropoxymethylated benzoguanamine, dipropoxymethylated benzoguanamine, tripropoxymethylated benzoguanamine, tetrapropoxymethylated benzoguanamine, monobutoxymethylated benzoguanamine, dibutoxymethylated benzoguanamine, tributoxymethylated benzoguanamine, and tetrabutoxymethylated benzoguanamine.

In addition, as the compound having at least one group selected from the group consisting of a methylol group and an alkoxymethyl group, a compound in which at least one group selected from the group consisting of a methylol group and an alkoxymethyl group is directly bonded to an aromatic ring (preferably a benzene ring) is also preferably used.
Specific examples of such compounds include benzenedimethanol, bis(hydroxymethyl)cresol, bis(hydroxymethyl)dimethoxybenzene, bis(hydroxymethyl)diphenyl ether, bis(hydroxymethyl)benzophenone, hydroxymethylphenyl hydroxymethylbenzoate, bis(hydroxymethyl)biphenyl, dimethylbis(hydroxymethyl)biphenyl, bis(methoxymethyl)benzene, bis(methoxymethyl)cresol, bis(methoxymethyl)dimethoxybenzene, bis(methoxymethyl)diphenyl ether, bis(methoxymethyl)benzophenone, methoxymethylphenyl methoxymethylbenzoate, bis(methoxymethyl)biphenyl, dimethylbis(methoxymethyl)biphenyl, 4,4',4''-ethylidene tris[2,6-bis(methoxymethyl)phenol], 5,5'-[2,2,2-trifluoro-1-(trifluoromethyl)ethylidene]bis[2-hydroxy-1,3-benzenedimethanol], and 3,3',5,5'-tetrakis(methoxymethyl)-1,1'-biphenyl-4,4'-diol.

Other crosslinking agents may be commercially available, and suitable commercially available products include 46DMOC, 46DMOEP (both manufactured by Asahi Organic Chemicals Co., Ltd.), DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DMLBisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, and TriML-35XL. , TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (all manufactured by Honshu Chemical Industry Co., Ltd.), Nikalac (registered trademark, the same applies below) MX-290, Nikalac MX-280, Nikalac MX-270, Nikalac MX-279, Nikalac MW-100LM, Nikalac MX-750LM (all manufactured by Sanwa Chemical Co., Ltd.), etc.

The resin composition of the present invention also preferably contains, as another crosslinking agent, at least one compound selected from the group consisting of epoxy compounds, oxetane compounds, and benzoxazine compounds.

-Epoxy compound (compound having an epoxy group)-
The epoxy compound is preferably a compound having two or more epoxy groups in one molecule. The epoxy group undergoes a crosslinking reaction at 200° C. or less, and does not undergo a dehydration reaction due to the crosslinking, so that film shrinkage is unlikely to occur. Therefore, the inclusion of the epoxy compound is effective in curing the resin composition at low temperatures and suppressing warping.

The epoxy compound preferably contains a polyethylene oxide group. This further reduces the elastic modulus and suppresses warping. A polyethylene oxide group refers to a group having 2 or more repeating ethylene oxide units, and the number of repeating units is preferably 2 to 15.

Examples of epoxy compounds include, but are not limited to, bisphenol A type epoxy resins; bisphenol F type epoxy resins; alkylene glycol type epoxy resins or polyhydric alcohol hydrocarbon type epoxy resins such as propylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, butylene glycol diglycidyl ether, hexamethylene glycol diglycidyl ether, trimethylolpropane triglycidyl ether; polyalkylene glycol type epoxy resins such as polypropylene glycol diglycidyl ether; and epoxy group-containing silicones such as polymethyl(glycidyloxypropyl)siloxane. Specifically, Epicron (registered trademark, the same applies below) 850-S, Epicron HP-4032, Epicron HP-7200, Epicron HP-820, Epicron HP-4700, Epicron HP-4770, Epicron EXA-830LVP, Epicron EXA-8183, Epicron EXA-8169, Epicron N-660, Epicron N-665-EXP-S, Epicron N-740 (all trade names, manufactured by DIC Corporation), Likaresin (registered trademark, the same applies below) BEO-20E, Likaresin BEO-60E, Likaresin HBE-100, Likaresin DME-100, Likaresin L-200 (all trade names, manufactured by New Japan Chemical Co., Ltd.), EP-4003S, EP-4000S, EP-4088S, EP-3950S (all trade names, manufactured by ADEKA Corporation), Ceroxa Celoxide (registered trademark, the same applies below) 2021P, Celloxide 2081, Celloxide 2000, EHPE3150, Epolead (registered trademark, the same applies below) GT401, Epolead PB4700, Epolead PB3600 (all trade names, manufactured by Daicel Corporation), NC-3000, NC-3000-L, NC-3000-H, NC-3000-FH-75M, NC-3100, CER-30 00-L, NC-2000-L, XD-1000, NC-7000L, NC-7300L, EPPN-501H, EPPN-501HY, EPPN-502H, EOCN-1020, EOCN-102S, EOCN-103S, EOCN-104S, CER-1020, EPPN-201, BREN-S, BREN-10S (all trade names, manufactured by Nippon Kayaku Co., Ltd.). The following compounds are also preferably used.

In the formula, n is an integer from 1 to 5, and m is an integer from 1 to 20.

In the above structure, it is preferable that n is 1 to 2 and m is 3 to 7 in order to achieve both heat resistance and improved elongation.

--Oxetane compound (compound having an oxetanyl group)--
Examples of the oxetane compound include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis{[(3-ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester, etc. Specific examples include the Aron Oxetane series (e.g., OXT-121, OXT-221) manufactured by Toagosei Co., Ltd., which may be used alone or in combination of two or more kinds.

-Benzoxazine compound (compound having a benzoxazolyl group)-
Benzoxazine compounds are preferred because they undergo a crosslinking reaction derived from a ring-opening addition reaction, so that no degassing occurs during curing, and further, they reduce thermal shrinkage and suppress the occurrence of warping.

Preferred examples of benzoxazine compounds include P-d type benzoxazine, F-a type benzoxazine (all trade names, manufactured by Shikoku Kasei Corporation), benzoxazine adducts of polyhydroxystyrene resins, and phenol novolac type dihydrobenzoxazine compounds. These may be used alone or in combination of two or more types.

The content of the other crosslinking agent is preferably 0.1 to 30 mass% relative to the total solid content of the resin composition, more preferably 0.1 to 20 mass%, even more preferably 0.5 to 15 mass%, and particularly preferably 1.0 to 10 mass%. Only one type of other crosslinking agent may be contained, or two or more types may be contained. When two or more types of other crosslinking agents are contained, the total is preferably within the above range.

The resin composition of the present invention preferably contains a photosensitizer.
Examples of the photosensitizer include a polymerization initiator and a photoacid generator.

[Polymerization initiator]
The resin composition of the present invention preferably contains a polymerization initiator. The polymerization initiator may be a thermal polymerization initiator or a photopolymerization initiator, but it is particularly preferable that the resin composition contains a photopolymerization initiator.
The photopolymerization initiator is preferably a photoradical polymerization initiator. The photoradical polymerization initiator is not particularly limited and can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator having photosensitivity to light rays in the ultraviolet to visible regions is preferable. Alternatively, it may be an activator that reacts with a photoexcited sensitizer to generate active radicals.

The photoradical polymerization initiator preferably contains at least one compound having a molar absorption coefficient of at least about 50 L·mol ⁻¹ ·cm ⁻¹ in a wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). The molar absorption coefficient of the compound can be measured using a known method. For example, it is preferable to measure it using an ultraviolet-visible spectrophotometer (Varian Cary-5 spectrophotometer) at a concentration of 0.01 g/L using ethyl acetate as a solvent.

Any known compound can be used as the photoradical polymerization initiator. For example, halogenated hydrocarbon derivatives (e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), acylphosphine compounds such as acylphosphine oxides, hexaarylbiimidazoles, oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, α-aminoketone compounds such as aminoacetophenones, α-hydroxyketone compounds such as hydroxyacetophenones, azo compounds, azide compounds, metallocene compounds, organic boron compounds, iron arene complexes, etc. For details of these, please refer to the descriptions in paragraphs 0165 to 0182 of JP 2016-027357 A and paragraphs 0138 to 0151 of WO 2015/199219 A, the contents of which are incorporated herein by reference. Further examples include the compounds described in paragraphs 0065 to 0111 of JP 2014-130173 A and JP 6301489 A, the peroxide-based photopolymerization initiators described in MATERIAL STAGE 37 to 60p, vol. 19, No. 3, 2019, the photopolymerization initiators described in WO 2018/221177 A, the photopolymerization initiators described in WO 2018/110179 A, the photopolymerization initiators described in JP 2019-043864 A, the photopolymerization initiators described in JP 2019-044030 A, and the peroxide-based initiators described in JP 2019-167313 A, the contents of which are incorporated herein by reference.

Examples of ketone compounds include the compounds described in paragraph 0087 of JP 2015-087611 A, the contents of which are incorporated herein by reference. As a commercially available product, Kayacure-DETX-S (manufactured by Nippon Kayaku Co., Ltd.) is also preferably used.

In one embodiment of the present invention, hydroxyacetophenone compounds, aminoacetophenone compounds, and acylphosphine compounds can be suitably used as photoradical polymerization initiators. More specifically, for example, aminoacetophenone-based initiators described in JP-A-10-291969 and acylphosphine oxide-based initiators described in Japanese Patent No. 4225898 can be used, the contents of which are incorporated herein by reference.

α-Hydroxyketone initiators that can be used include Omnirad 184, Omnirad 1173, Omnirad 2959, Omnirad 127 (all manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (all manufactured by BASF).

As α-aminoketone initiators, Omnirad 907, Omnirad 369, Omnirad 369E, Omnirad 379EG (all manufactured by IGM Resins B.V.), IRGACURE 907, IRGACURE 369, and IRGACURE 379 (all manufactured by BASF) can be used.

As the aminoacetophenone initiator, acylphosphine oxide initiator, and metallocene compound, for example, the compounds described in paragraphs 0161 to 0163 of WO 2021/112189 can also be suitably used. The contents of this specification are incorporated herein.

As a photoradical polymerization initiator, an oxime compound is more preferably used. By using an oxime compound, it becomes possible to more effectively improve the exposure latitude. Oxime compounds are particularly preferred because they have a wide exposure latitude (exposure margin) and also function as a photocuring accelerator.

Specific examples of oxime compounds include the compounds described in JP-A-2001-233842, the compounds described in JP-A-2000-080068, the compounds described in JP-A-2006-342166, the compounds described in J. C. S. Perkin II (1979, pp. 1653-1660), the compounds described in J. C. S. Compounds described in Perkin II (1979, pp. 156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp. 202-232), compounds described in JP-A-2000-066385, compounds described in JP-T-2004-534797, compounds described in JP-A-2017-019766, Examples of the compounds include those described in WO 6065596, WO 2015/152153, WO 2017/051680, JP 2017-198865, WO 2017/164127, paragraphs 0025 to 0038, and WO 2013/167515, the contents of which are incorporated herein by reference.

Preferred oxime compounds include, for example, compounds having the following structure, 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy(imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino))-1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one. In the resin composition, it is particularly preferable to use an oxime compound as a photoradical polymerization initiator. The oxime compound as a photoradical polymerization initiator has a linking group of >C=N-O-C(=O)- in the molecule.

Commercially available oxime compounds include IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, and IRGACURE OXE 04 (manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, photoradical polymerization initiator 2 described in JP 2012-014052 A), TR-PBG-304, TR-PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.), ADEKA ARCLES NCI-730, NCI-831, and ADEKA ARCLES NCI-930 (manufactured by ADEKA Corporation), DFI-091 (manufactured by Daito Chemistry Co., Ltd.), and SpeedCure PDO (SARTOMER Also usable are oxime compounds having the following structure:

As the photoradical polymerization initiator, for example, an oxime compound having a fluorene ring described in paragraphs 0169 to 0171 of WO 2021/112189, an oxime compound having a skeleton in which at least one benzene ring of a carbazole ring is a naphthalene ring, or an oxime compound having a fluorine atom can be used.
In addition, oxime compounds having a nitro group, oxime compounds having a benzofuran skeleton, and oxime compounds having a hydroxyl group-containing substituent bonded to a carbazole skeleton, as described in paragraphs 0208 to 0210 of WO 2021/020359, can also be used. The contents of these compounds are incorporated herein by reference.

As the photopolymerization initiator, an oxime compound having an aromatic ring group Ar ^OX1 in which an electron-withdrawing group is introduced into an aromatic ring (hereinafter, also referred to as oxime compound OX) can also be used. The electron-withdrawing group of the aromatic ring group Ar ^OX1 includes an acyl group, a nitro group, a trifluoromethyl group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, and a cyano group. An acyl group and a nitro group are preferred, and an acyl group is more preferred because it is easy to form a film with excellent light resistance, and a benzoyl group is even more preferred. The benzoyl group may have a substituent. The substituent is preferably a halogen atom, a cyano group, a nitro group, a hydroxy group, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a heterocyclic group, a heterocyclic oxy group, an alkenyl group, an alkylsulfanyl group, an arylsulfanyl group, an acyl group, or an amino group, more preferably an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a heterocyclic oxy group, an alkylsulfanyl group, an arylsulfanyl group, or an amino group, and further preferably an alkoxy group, an alkylsulfanyl group, or an amino group.

The oxime compound OX is preferably at least one selected from the compounds represented by the formula (OX1) and the compounds represented by the formula (OX2), and more preferably the compound represented by the formula (OX2).

In the formula, R ^X1 represents an alkyl group, an alkenyl group, an alkoxy group, an aryl group, an aryloxy group, a heterocyclic group, a heterocyclic oxy group, an alkylsulfanyl group, an arylsulfanyl group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an acyl group, an acyloxy group, an amino group, a phosphinoyl group, a carbamoyl group, or a sulfamoyl group;
R ^X2 represents an alkyl group, an alkenyl group, an alkoxy group, an aryl group, an aryloxy group, a heterocyclic group, a heterocyclic oxy group, an alkylsulfanyl group, an arylsulfanyl group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an acyloxy group, or an amino group;
R ^X3 to R ^X14 each independently represent a hydrogen atom or a substituent.
However, at least one of R ^X10 to R ^X14 is an electron-withdrawing group.

In the above formula, it is preferable that R ^X12 is an electron-withdrawing group, and R ^X10 , R ^X11 , R ^X13 and R ^X14 are each a hydrogen atom.

Specific examples of oxime compounds OX include the compounds described in paragraphs 0083 to 0105 of Japanese Patent No. 4600600, the contents of which are incorporated herein by reference.

Particularly preferred oxime compounds include oxime compounds having specific substituents as disclosed in JP 2007-269779 A and oxime compounds having thioaryl groups as disclosed in JP 2009-191061 A, the contents of which are incorporated herein by reference.

From the viewpoint of exposure sensitivity, the photoradical polymerization initiator is preferably a compound selected from the group consisting of trihalomethyltriazine compounds, benzyl dimethyl ketal compounds, α-hydroxyketone compounds, α-aminoketone compounds, acylphosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, onium salt compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds and derivatives thereof, cyclopentadiene-benzene-iron complexes and salts thereof, halomethyloxadiazole compounds, and 3-aryl substituted coumarin compounds.

The photoradical polymerization initiator is a trihalomethyltriazine compound, an α-aminoketone compound, an acylphosphine compound, a phosphine oxide compound, a metallocene compound, an oxime compound, a triarylimidazole dimer, an onium salt compound, a benzophenone compound, or an acetophenone compound. At least one compound selected from the group consisting of a trihalomethyltriazine compound, an α-aminoketone compound, a metallocene compound, an oxime compound, a triarylimidazole dimer, or a benzophenone compound is more preferred, and a metallocene compound or an oxime compound is even more preferred.

As the photoradical polymerization initiator, the compounds described in paragraphs [0175] to [0179] of WO 2021/020359 and the compounds described in paragraphs [0048] to [0055] of WO 2015/125469 can also be used, the contents of which are incorporated herein by reference.

As the photoradical polymerization initiator, a bifunctional or trifunctional or higher functional photoradical polymerization initiator may be used. By using such a photoradical polymerization initiator, two or more radicals are generated from one molecule of the photoradical polymerization initiator, resulting in good sensitivity. Furthermore, when a compound with an asymmetric structure is used, crystallinity decreases and solubility in solvents improves, making it less likely to precipitate over time, and improving the stability of the resin composition over time. Specific examples of bifunctional or trifunctional or higher functional photoradical polymerization initiators include dimers of oxime compounds described in JP-T-2010-527339, JP-T-2011-524436, WO-2015/004565, WO-2016-532675, paragraphs 0407 to 0412, and WO-2017/033680, paragraphs 0039 to 0055; compound (E) and compound (G) described in WO-T-2013-522445; Examples of such initiators include Cmpd1 to 7 described in Japanese Patent Publication No. 4963, the oxime ester photoinitiators described in paragraph 0007 of JP-T-2017-523465, the photoinitiators described in paragraphs 0020 to 0033 of JP-A-2017-167399, the photopolymerization initiator (A) described in paragraphs 0017 to 0026 of JP-A-2017-151342, and the oxime ester photoinitiators described in Japanese Patent Publication No. 6469669, the contents of which are incorporated herein by reference.

When the resin composition contains a photopolymerization initiator, the content is preferably 0.1 to 30 mass% based on the total solid content of the resin composition, more preferably 0.1 to 20 mass%, even more preferably 0.5 to 15 mass%, and even more preferably 1.0 to 10 mass%. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more types of photopolymerization initiators are contained, the total amount is preferably within the above range.
In addition, since the photopolymerization initiator may also function as a thermal polymerization initiator, the crosslinking caused by the photopolymerization initiator may be further promoted by heating in an oven, a hot plate, or the like.

[Sensitizer]
The resin composition may contain a sensitizer. The sensitizer absorbs specific active radiation and becomes electronically excited. The sensitizer in the electronically excited state comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and effects such as electron transfer, energy transfer, and heat generation occur. As a result, the thermal radical polymerization initiator and the photoradical polymerization initiator undergo a chemical change and are decomposed to generate a radical, an acid, or a base.
Usable sensitizers include benzophenone-based, Michler's ketone-based, coumarin-based, pyrazole azo-based, anilino azo-based, triphenylmethane-based, anthraquinone-based, anthracene-based, anthrapyridone-based, benzylidene-based, oxonol-based, pyrazolotriazole azo-based, pyridone azo-based, cyanine-based, phenothiazine-based, pyrrolopyrazole azomethine-based, xanthene-based, phthalocyanine-based, benzopyran-based, indigo-based compounds, and the like.
Examples of the sensitizer include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamylidene indanone, and p-dimethylaminobenzylidene indanone. Non, 2-(p-dimethylaminophenylbiphenylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)isonaphthothiazole, 1,3-bis(4'-dimethylaminobenzal)acetone, 1,3-bis(4'-diethylaminobenzal)acetone, 3,3'-carbonyl-bis(7-diethylaminocoumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin phosphorus, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin (7-(diethylamino)coumarin-3-carboxylate ethyl), N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, 4-morpholinobenzophenone, isoamyl dimethylaminobenzoate, isoethylaminobenzoate Examples of such an alkyl ester include soamyl, 2-mercaptobenzimidazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzothiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzoyl)styrene, diphenylacetamide, benzanilide, N-methylacetanilide, and 3',4'-dimethylacetanilide.
Other sensitizing dyes may also be used.
For details about the sensitizing dye, the description in paragraphs [0161] to [0163] of JP2016-027357A can be referred to, the contents of which are incorporated herein by reference.

When the resin composition contains a sensitizer, the content of the sensitizer is preferably 0.01 to 20 mass % relative to the total solid content of the resin composition, more preferably 0.1 to 15 mass %, and even more preferably 0.5 to 10 mass %. The sensitizer may be used alone or in combination of two or more types.

[Chain transfer agent]
The resin composition of the present invention may contain a chain transfer agent. The chain transfer agent is defined, for example, in the Third Edition of the Polymer Dictionary (edited by the Society of Polymer Science, 2005), pages 683-684. Examples of the chain transfer agent include compounds having -S-S-, -SO ₂ -S-, -N-O-, SH, PH, SiH, and GeH in the molecule, and dithiobenzoates, trithiocarbonates, dithiocarbamates, and xanthates having a thiocarbonylthio group used in RAFT (Reversible Addition Fragmentation Chain Transfer) polymerization. These donate hydrogen to a low activity radical to generate a radical, or are oxidized and then deprotonated to generate a radical. In particular, thiol compounds can be preferably used.

In addition, the chain transfer agent may be the compound described in paragraphs 0152 to 0153 of International Publication No. 2015/199219, the contents of which are incorporated herein by reference.

When the resin composition contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the total solid content of the resin composition. The chain transfer agent may be one type or two or more types. When there are two or more types of chain transfer agents, the total is preferably within the above range.

[Photoacid generator]
The resin composition of the present invention preferably contains a photoacid generator.
The photoacid generator refers to a compound that generates at least one of a Bronsted acid and a Lewis acid when irradiated with light of 200 nm to 900 nm. The light to be irradiated is preferably light with a wavelength of 300 nm to 450 nm, more preferably light with a wavelength of 330 nm to 420 nm. The photoacid generator is preferably capable of generating an acid by being exposed to light, either alone or in combination with a sensitizer.
Preferred examples of the acid to be generated include hydrogen halides, carboxylic acids, sulfonic acids, sulfinic acids, thiosulfinic acids, phosphoric acids, phosphoric acid monoesters, phosphoric acid diesters, boron derivatives, phosphorus derivatives, antimony derivatives, halogen peroxides, and sulfonamides.

Examples of photoacid generators include quinone diazide compounds, oxime sulfonate compounds, organic halide compounds, organic borate compounds, disulfone compounds, and onium salt compounds.
From the viewpoints of sensitivity and storage stability, organic halogen compounds, oxime sulfonate compounds, and onium salt compounds are preferred, and from the viewpoints of the mechanical properties of the film to be formed, oxime esters are preferred.

Quinone diazide compounds include those in which the sulfonic acid of quinone diazide is ester-bonded to a monovalent or polyvalent hydroxy compound, those in which the sulfonic acid of quinone diazide is ester-bonded to a monovalent or polyvalent amino compound, and those in which the sulfonic acid of quinone diazide is ester-bonded and/or sulfonamide-bonded to a polyhydroxy polyamino compound. Although not all functional groups of these polyhydroxy compounds, polyamino compounds, and polyhydroxy polyamino compounds need to be substituted with quinone diazide, it is preferable that, on average, 40 mol% or more of the total functional groups are substituted with quinone diazide. By incorporating such quinone diazide compounds, a resin composition can be obtained that is sensitive to the i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) of a mercury lamp, which are common ultraviolet rays.

Specific examples of hydroxy compounds include phenol, trihydroxybenzophenone, 4-methoxyphenol, isopropanol, octanol, t-Bu alcohol, cyclohexanol, naphthol, Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, and BisOC P-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, Methylenetris-FR-CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, Dimethylol-BisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriM L-35XL, TML-BP, TML-HQ, TML-pp-BPF, TML-BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PC, BIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A, 46DMOC, 46DMOEP, TM-BIP-A (all trade names, manufactured by Asahi Organic Chemical Co., Ltd.) Examples of suitable phenols include, but are not limited to, 2,6-dimethoxymethyl-4-t-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol, naphthol, tetrahydroxybenzophenone, methyl gallate, bisphenol A, bisphenol E, methylene bisphenol, BisP-AP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), and novolac resins.

Specific examples of amino compounds include, but are not limited to, aniline, methylaniline, diethylamine, butylamine, 1,4-phenylenediamine, 1,3-phenylenediamine, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl methane, 4,4'-diaminodiphenyl sulfone, and 4,4'-diaminodiphenyl sulfide.

Specific examples of polyhydroxypolyamino compounds include, but are not limited to, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 3,3'-dihydroxybenzidine.

Among these, it is preferable that the quinone diazide compound contains an ester of a phenol compound and a 4-naphthoquinone diazide sulfonyl group. This allows for higher sensitivity to i-line exposure and higher resolution.

The content of the quinone diazide compound used in the resin composition of the present invention is preferably 1 to 50 parts by mass, and more preferably 10 to 40 parts by mass, per 100 parts by mass of resin. By setting the content of the quinone diazide compound within this range, it is possible to obtain contrast between exposed and unexposed areas, thereby achieving higher sensitivity, which is preferable. Furthermore, a sensitizer or the like may be added as necessary.

The photoacid generator is preferably a compound containing an oxime sulfonate group (hereinafter, also simply referred to as an "oxime sulfonate compound").
The oxime sulfonate compound is not particularly limited as long as it has an oxime sulfonate group, but is preferably a compound represented by the following formula (OS-1), formula (OS-103), formula (OS-104), or formula (OS-105).

In formula (OS-1), ^X3 represents an alkyl group, an alkoxy group, or a halogen atom. When a plurality of ^X3s are present, they may be the same or different. The alkyl group and alkoxy group in ^X3 may have a substituent. The alkyl group is preferably a linear or branched alkyl group having 1 to 4 carbon atoms. The alkoxy group is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms. The halogen atom is preferably a chlorine atom or a fluorine atom.
m3 represents an integer of 0 to 3, and is preferably 0 or 1. When m3 is 2 or 3, multiple ^X3s may be the same or different.
R ³⁴ represents an alkyl group or an aryl group, and is preferably an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, a halogenated alkoxy group having 1 to 5 carbon atoms, a phenyl group which may be substituted with W, a naphthyl group which may be substituted with W, or an anthranyl group which may be substituted with W. W represents a halogen atom, a cyano group, a nitro group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms or a halogenated alkoxy group having 1 to 5 carbon atoms, an aryl group having 6 to 20 carbon atoms, or a halogenated aryl group having 6 to 20 carbon atoms.

In formula (OS-1), a compound in which m3 is 3, ^X3 is a methyl group, the substitution position of ^X3 is the ortho position, and ^R34 is a linear alkyl group having 1 to 10 carbon atoms, a 7,7-dimethyl-2-oxonorbornylmethyl group, or a p-tolyl group is particularly preferred.

Specific examples of the oxime sulfonate compound represented by formula (OS-1) include the following compounds described in paragraphs [0064] to [0068] of JP2011-209692A and paragraphs [0158] to [0167] of JP2015-194674A, the contents of which are incorporated herein by reference.

In formulae (OS-103) to (OS-105), R ^s1 represents an alkyl group, an aryl group, or a heteroaryl group; R ^s2 , which may be present in plurality, each independently represents a hydrogen atom, an alkyl group, an aryl group, or a halogen atom; R ^s6 , which may be present in plurality, each independently represents a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group, or an alkoxysulfonyl group; Xs represents O or S; ns represents 1 or 2; and ms represents an integer of 0 to 6.
The alkyl group (preferably having 1 to 30 carbon atoms), aryl group (preferably having 6 to 30 carbon atoms) or heteroaryl group (preferably having 4 to 30 carbon atoms) represented by R ^s1 may have a substituent.

R ^s2 is preferably a hydrogen atom, an alkyl group (preferably having 1 to 12 carbon atoms) or an aryl group (preferably having 6 to 30 carbon atoms), more preferably a hydrogen atom or an alkyl group. Of the R ^s2 which may be present in two or more, it is preferable that one or two are an alkyl group, an aryl group or a halogen atom, more preferably one is an alkyl group, an aryl group or a halogen atom, and particularly preferably one is an alkyl group and the remaining are hydrogen atoms. The alkyl group or aryl group represented by R ^s2 may have a substituent.
Xs represents O or S, and is preferably O. In the above formulae (OS-103) to (OS-105), the ring containing Xs as a ring member is a 5-membered or 6-membered ring.

ns represents 1 or 2, and when Xs is O, ns is preferably 1, and when Xs is S, ns is preferably 2.
The alkyl group (preferably having 1 to 30 carbon atoms) and the alkyloxy group (preferably having 1 to 30 carbon atoms) represented by R ^s6 may have a substituent.
ms represents an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, and particularly preferably 0.

The compound represented by formula (OS-103) is preferably a compound represented by the following formula (OS-106), formula (OS-110) or formula (OS-111), the compound represented by formula (OS-104) is preferably a compound represented by the following formula (OS-107), and the compound represented by formula (OS-105) is particularly preferably a compound represented by the following formula (OS-108) or formula (OS-109).

In formulae (OS-106) to (OS-111), R ^t1 represents an alkyl group, an aryl group, or a heteroaryl group; R ^t7 represents a hydrogen atom or a bromine atom; R ^t8 represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group, or a chlorophenyl group; R ^t9 represents a hydrogen atom, a halogen atom, a methyl group, or a methoxy group; and R ^t2 represents a hydrogen atom or a methyl group.

R ^t7 represents a hydrogen atom or a bromine atom, and is preferably a hydrogen atom.
R ^t8 represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group, or a chlorophenyl group, and is preferably an alkyl group having 1 to 8 carbon atoms, a halogen atom, or a phenyl group, more preferably an alkyl group having 1 to 8 carbon atoms, even more preferably an alkyl group having 1 to 6 carbon atoms, and particularly preferably a methyl group.

R ^t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and is preferably a hydrogen atom.
R ^t2 represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
In the above oxime sulfonate compound, the stereochemical structure of the oxime (E, Z) may be either one or a mixture.
Specific examples of the oxime sulfonate compounds represented by Formulae (OS-103) to (OS-105) include the compounds described in paragraphs [0088] to [0095] of JP-A-2011-209692 and paragraphs [0168] to [0194] of JP-A-2015-194674, the contents of which are incorporated herein by reference.

Other preferred embodiments of compounds containing at least one oxime sulfonate group include compounds represented by the following formulas (OS-101) and (OS-102).

In formulae (OS-101) and (OS-102), R ^u9 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or a heteroaryl group. ^{R u9} is preferably a cyano group or an aryl group, and more preferably a cyano group, a phenyl group, or a naphthyl group.
R ^u2a represents an alkyl group or an aryl group.
Xu represents —O—, —S—, —NH—, —NR ^u5 —, —CH ₂ —, —CR ^u6 H— or —CR ^u6 R ^u7 —, where R ^u5 to R ^u7 each independently represent an alkyl group or an aryl group.

R ^u1 to R ^u4 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, an amide group, a sulfo group, a cyano group, or an aryl group. Two of R ^u1 to R ^u4 may be bonded to each other to form a ring. In this case, the ring may be condensed to form a condensed ring with the benzene ring. R ^u1 to R ^u4 are preferably a hydrogen atom, a halogen atom, or an alkyl group. At least two of R ^u1 to R ^u4 may be bonded to each other to form an aryl group. In particular, it is preferable that R ^u1 to R ^u4 are all hydrogen atoms. Any of the above-mentioned substituents may further have a substituent.

The compound containing at least one oxime sulfonate group is more preferably a compound represented by formula (OS-102).
In the oxime sulfonate compound, the stereochemical structures (E, Z, etc.) of the oxime and benzothiazole rings may each be either one or a mixture.
Specific examples of the compound represented by formula (OS-101) include the compounds described in paragraphs [0102] to [0106] of JP-A-2011-209692 and paragraphs [0195] to [0207] of JP-A-2015-194674, the contents of which are incorporated herein by reference.
Among the above compounds, the following b-9, b-16, b-31, and b-33 are preferable.

Examples of commercially available products include WPAG-336 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), WPAG-443 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), and MBZ-101 (manufactured by Midori Kagaku Co., Ltd.).

Further, compounds represented by the following structural formulas are also preferred examples.

Examples of organic halogenated compounds include the compounds described in paragraphs 0042 to 0043 of JP 2015-087409 A, the contents of which are incorporated herein by reference.

The content of the photoacid generator is preferably 0.1 to 20 mass%, more preferably 0.5 to 18 mass%, even more preferably 0.5 to 10 mass%, still more preferably 0.5 to 3 mass%, and even more preferably 0.5 to 1.2 mass%, based on the total solid content of the resin composition.
The photoacid generator may be used alone or in combination of two or more kinds. In the case of using a combination of two or more kinds, the total amount thereof is preferably within the above range.
It is also preferable to use a sensitizer in combination to impart photosensitivity to a desired light source.

<Base Generator>
The resin composition of the present invention may contain a base generator. Here, the base generator is a compound that can generate a base by physical or chemical action. Preferred base generators include a thermal base generator and a photobase generator.
In particular, when the resin composition contains a precursor of a cyclized resin, the resin composition preferably contains a base generator. By containing the thermal base generator in the resin composition, for example, the cyclization reaction of the precursor can be promoted by heating, and the mechanical properties and chemical resistance of the cured product can be improved, and the performance as an interlayer insulating film for a rewiring layer contained in a semiconductor package can be improved.
The base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines.
The base generator is not particularly limited, and a known base generator can be used. Examples of known base generators include carbamoyl oxime compounds, carbamoyl hydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, amine imide compounds, pyridine derivative compounds, α-aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, α-lactone ring derivative compounds, amine imide compounds, phthalimide derivative compounds, and acyloxyimino compounds.
Specific examples of the non-ionic base generator include compounds represented by formula (B1), formula (B2), or formula (B3).

In formula (B1) and formula (B2), Rb ¹ , Rb ² and Rb ³ each independently represent an organic group not having a tertiary amine structure, a halogen atom or a hydrogen atom. However, Rb ¹ and Rb ² are not hydrogen atoms at the same time. In addition, none of Rb ¹ , Rb ² and Rb ³ has a carboxy group. In this specification, a tertiary amine structure refers to a structure in which all three bonds of a trivalent nitrogen atom are covalently bonded to a carbon atom of a hydrocarbon group. Therefore, when the carbon atom bonded to the trivalent nitrogen atom is a carbon atom constituting a carbonyl group, that is, when it forms an amide group together with the nitrogen atom, it is not a tertiary amine structure.

In formula (B1) and formula (B2), it is preferable that at least one of Rb ¹ , Rb ² and Rb ³ contains a cyclic structure, and it is more preferable that at least two of them contain a cyclic structure. The cyclic structure may be either a monocyclic ring or a condensed ring, and it is preferable that a monocyclic ring or a condensed ring in which two monocyclic rings are condensed is preferable. The monocyclic ring is preferably a 5-membered ring or a 6-membered ring, and more preferably a 6-membered ring. The monocyclic ring is preferably a cyclohexane ring or a benzene ring, and more preferably a cyclohexane ring.

More specifically, Rb ¹ and Rb ² are preferably a hydrogen atom, an alkyl group (preferably having 1 to 24 carbon atoms, more preferably having 2 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms), an alkenyl group (preferably having 2 to 24 carbon atoms, more preferably having 2 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms), an aryl group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 10 carbon atoms), or an arylalkyl group (preferably having 7 to 25 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 12 carbon atoms). These groups may have a substituent. Rb ¹ and Rb ² may be bonded to each other to form a ring. The ring formed is preferably a 4- to 7-membered nitrogen-containing heterocycle. ^Rb1 and ^Rb2 are preferably a linear, branched, or cyclic alkyl group (preferably having 1 to 24 carbon atoms, more preferably having 2 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms) which may have a substituent, more preferably a cycloalkyl group (preferably having 3 to 24 carbon atoms, more preferably having 3 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms) which may have a substituent, and even more preferably a cyclohexyl group which may have a substituent.

Rb ³ is an alkyl group (having 1 to 24 carbon atoms, preferably 2 to 18 carbon atoms, and more preferably 3 to 12 carbon atoms), an aryl group (having 6 to 22 carbon atoms, preferably 6 to 18 carbon atoms, and more preferably 6 to 10 carbon atoms), an alkenyl group (having 2 to 24 carbon atoms, preferably 2 to 12 carbon atoms, and more preferably 2 to 6 carbon atoms), an arylalkyl group (having 7 to 23 carbon atoms, preferably 7 to 19 carbon atoms, and more preferably 7 to 12 carbon atoms), an arylalkenyl group (having 8 to 24 carbon atoms, preferably 8 to 20 carbon atoms, and more preferably 8 to 16 carbon atoms), an alkoxyl group (having 1 to 24 carbon atoms, preferably 2 to 18 carbon atoms, and more preferably 3 to 12 carbon atoms), an aryloxy group (having 6 to 22 carbon atoms, preferably 6 to 18 carbon atoms, and more preferably 6 to 12 carbon atoms), or an arylalkyloxy group (having 7 to 23 carbon atoms, preferably 7 to 19 carbon atoms, and more preferably 7 to 12 carbon atoms). Among these, a cycloalkyl group (preferably having 3 to 24 carbon atoms, more preferably having 3 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms), an arylalkenyl group, and an arylalkyloxy group are preferable. ^Rb3 may further have a substituent.

The compound represented by formula (B1) is preferably a compound represented by the following formula (B1-1) or (B1-2).

In the formula, Rb ¹¹ and Rb ¹² , and Rb ³¹ and Rb ³² are the same as Rb ¹ and Rb ² in formula (B1), respectively.
Rb ¹³ is an alkyl group (preferably having 1 to 24 carbon atoms, more preferably having 2 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms), an alkenyl group (preferably having 2 to 24 carbon atoms, more preferably having 2 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms), an aryl group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 12 carbon atoms), or an arylalkyl group (preferably having 7 to 23 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 12 carbon atoms), which may have a substituent. Among these, Rb ¹³ is preferably an arylalkyl group.

Rb ³³ and Rb ³⁴ each independently represent a hydrogen atom, an alkyl group (preferably having 1 to 12 carbon atoms, more preferably having 1 to 8 carbon atoms, and even more preferably having 1 to 3 carbon atoms), an alkenyl group (preferably having 2 to 12 carbon atoms, more preferably having 2 to 8 carbon atoms, and even more preferably having 2 to 3 carbon atoms), an aryl group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 10 carbon atoms), or an arylalkyl group (preferably having 7 to 23 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 11 carbon atoms), and a hydrogen atom is preferable.

Rb ³⁵ is an alkyl group (preferably having 1 to 24 carbon atoms, more preferably having 1 to 12 carbon atoms, and even more preferably having 3 to 8 carbon atoms), an alkenyl group (preferably having 2 to 12 carbon atoms, more preferably having 2 to 10 carbon atoms, and even more preferably having 3 to 8 carbon atoms), an aryl group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 12 carbon atoms), or an arylalkyl group (preferably having 7 to 23 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 12 carbon atoms), and an aryl group is preferable.

The compound represented by formula (B1-1) is preferably a compound represented by formula (B1-1a).

Rb ¹¹ and Rb ¹² have the same meanings as Rb ¹¹ and Rb ¹² in formula (B1-1).
Rb ¹⁵ and Rb ¹⁶ are each a hydrogen atom, an alkyl group (preferably having 1 to 12 carbon atoms, more preferably having 1 to 6 carbon atoms, and even more preferably having 1 to 3 carbon atoms), an alkenyl group (preferably having 2 to 12 carbon atoms, more preferably having 2 to 6 carbon atoms, and even more preferably having 2 to 3 carbon atoms), an aryl group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 10 carbon atoms), or an arylalkyl group (preferably having 7 to 23 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 11 carbon atoms), and a hydrogen atom or a methyl group is preferable.
Rb ¹⁷ is an alkyl group (preferably having 1 to 24 carbon atoms, more preferably having 1 to 12 carbon atoms, and even more preferably having 3 to 8 carbon atoms), an alkenyl group (preferably having 2 to 12 carbon atoms, more preferably having 2 to 10 carbon atoms, and even more preferably having 3 to 8 carbon atoms), an aryl group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 12 carbon atoms), or an arylalkyl group (preferably having 7 to 23 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 12 carbon atoms), and among these, an aryl group is preferable.

In formula (B3), L represents a divalent hydrocarbon group having a saturated hydrocarbon group on the path of a linking chain connecting adjacent oxygen atoms and carbon atoms, and the number of atoms on the linking chain path is 3 or more. Furthermore, ^R and ^R each independently represent a monovalent organic group.

In this specification, the term "linking chain" refers to an atomic chain on a path connecting two atoms or atomic groups to be linked, which links these objects with the shortest distance (the smallest number of atoms). For example, in the compound represented by the following formula, L is composed of a phenyleneethylene group, has an ethylene group as a saturated hydrocarbon group, the linking chain is composed of four carbon atoms, and the number of atoms on the path of the linking chain (i.e., the number of atoms constituting the linking chain, hereinafter also referred to as the "linking chain length" or "length of the linking chain") is 4.

The number of carbon atoms in L in formula (B3) (including carbon atoms other than those in the linking chain) is preferably 3 to 24. The upper limit is more preferably 12 or less, even more preferably 10 or less, and particularly preferably 8 or less. The lower limit is more preferably 4 or more. From the viewpoint of rapidly proceeding with the intramolecular cyclization reaction, the upper limit of the linking chain length of L is preferably 12 or less, more preferably 8 or less, even more preferably 6 or less, and particularly preferably 5 or less. In particular, the linking chain length of L is preferably 4 or 5, and most preferably 4. Specific preferred compounds of the base generator include, for example, the compounds described in paragraphs 0102 to 0168 of WO 2020/066416 and the compounds described in paragraphs 0143 to 0177 of WO 2018/038002.

The base generator also preferably contains a compound represented by the following formula (N1).

In formula (N1), R ^N1 and R ^N2 each independently represent a monovalent organic group, R ^C1 represents a hydrogen atom or a protecting group, and L represents a divalent linking group.

L is a divalent linking group, and is preferably a divalent organic group. The linking chain length of the linking group is preferably 1 or more, and more preferably 2 or more. The upper limit is preferably 12 or less, more preferably 8 or less, and even more preferably 5 or less. The linking chain length is the number of atoms present in the atomic sequence that is the shortest path between the two carbonyl groups in the formula.

In formula (N1), R ^N1 and R ^N2 each independently represent a monovalent organic group (preferably having 1 to 24 carbon atoms, more preferably having 2 to 18 carbon atoms, and even more preferably having 3 to 12 carbon atoms), and are preferably a hydrocarbon group (preferably having 1 to 24 carbon atoms, more preferably having 1 to 12 carbon atoms, and even more preferably having 1 to 10 carbon atoms). Specific examples include aliphatic hydrocarbon groups (preferably having 1 to 24 carbon atoms, more preferably having 1 to 12 carbon atoms, and even more preferably having 1 to 10 carbon atoms) and aromatic hydrocarbon groups (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and even more preferably having 6 to 10 carbon atoms), and are preferably aliphatic hydrocarbon groups. When aliphatic hydrocarbon groups are used as R ^N1 and R ^N2 , the basicity of the generated base is high, and this is preferable. The aliphatic hydrocarbon group and the aromatic hydrocarbon group may have a substituent, and the aliphatic hydrocarbon group and the aromatic hydrocarbon group may have an oxygen atom in the aliphatic hydrocarbon chain, the aromatic ring, or the substituent. Particularly, an embodiment in which the aliphatic hydrocarbon group has an oxygen atom in the hydrocarbon chain is exemplified.

Examples of the aliphatic hydrocarbon group constituting R ^N1 and R ^N2 include a linear or branched chain alkyl group, a cyclic alkyl group, a group containing a combination of a linear alkyl group and a cyclic alkyl group, and an alkyl group having an oxygen atom in the chain. The linear or branched chain alkyl group preferably has 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, and even more preferably 3 to 12 carbon atoms. Examples of the linear or branched chain alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, an isopropyl group, an isobutyl group, a secondary butyl group, a tertiary butyl group, an isopentyl group, a neopentyl group, a tertiary pentyl group, and an isohexyl group.
The cyclic alkyl group preferably has a carbon number of 3 to 12, more preferably 3 to 6. Examples of the cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group.
The group containing a combination of a chain alkyl group and a cyclic alkyl group preferably has 4 to 24 carbon atoms, more preferably 4 to 18, and even more preferably 4 to 12. Examples of the group containing a combination of a chain alkyl group and a cyclic alkyl group include a cyclohexylmethyl group, a cyclohexylethyl group, a cyclohexylpropyl group, a methylcyclohexylmethyl group, and an ethylcyclohexylethyl group.
The alkyl group having an oxygen atom in the chain preferably has 2 to 12 carbon atoms, more preferably 2 to 6, and even more preferably 2 to 4. The alkyl group having an oxygen atom in the chain may be linear or cyclic, and may be linear or branched.
Among these, from the viewpoint of increasing the boiling point of the decomposition product base described below, R ^N1 and R ^N2 are preferably alkyl groups having 5 to 12 carbon atoms. However, in a formulation in which importance is placed on adhesion when laminating with a metal (e.g., copper) layer, a group having a cyclic alkyl group or an alkyl group having 1 to 8 carbon atoms is preferred.

R ^N1 and R ^N2 may be linked together to form a cyclic structure. The cyclic structure may have an oxygen atom or the like in the chain. The cyclic structure formed by R ^N1 and R ^N2 may be a monocyclic or condensed ring, but is preferably a monocyclic ring. The cyclic structure formed is preferably a 5-membered or 6-membered ring containing a nitrogen atom in formula (N1), such as a pyrrole ring, an imidazole ring, a pyrazole ring, a pyrroline ring, a pyrrolidine ring, an imidazolidine ring, a pyrazolidine ring, a piperidine ring, a piperazine ring, a morpholine ring, etc., and preferably a pyrroline ring, a pyrrolidine ring, a piperidine ring, a piperazine ring, a morpholine ring.

R ^C1 represents a hydrogen atom or a protecting group, and is preferably a hydrogen atom.
The protecting group is preferably a protecting group which is decomposed by the action of an acid or a base, and preferably includes a protecting group which is decomposed by an acid.
Specific examples of the protective group include linear or cyclic alkyl groups, and linear or cyclic alkyl groups having an oxygen atom in the chain. Examples of linear or cyclic alkyl groups include a methyl group, an ethyl group, an isopropyl group, a tert-butyl group, and a cyclohexyl group. Examples of linear alkyl groups having an oxygen atom in the chain include an alkyloxyalkyl group, and preferred examples include a methyloxymethyl (MOM) group and an ethyloxyethyl (EE) group. Examples of cyclic alkyl groups having an oxygen atom in the chain include an epoxy group, a glycidyl group, an oxetanyl group, a tetrahydrofuranyl group, and a tetrahydropyranyl (THP) group.

In formula (N1), the divalent linking group constituting L is not particularly limited, but is preferably a hydrocarbon group, more preferably an aliphatic hydrocarbon group. The hydrocarbon group may have a substituent, and may have an atom other than carbon atom in the hydrocarbon chain. The divalent linking group is more preferably a divalent hydrocarbon linking group that may have an oxygen atom in the chain, more preferably a divalent aliphatic hydrocarbon group that may have an oxygen atom in the chain, a divalent aromatic hydrocarbon group, or a group containing a combination of a divalent aliphatic hydrocarbon group that may have an oxygen atom in the chain and a divalent aromatic hydrocarbon group, and even more preferably a divalent aliphatic hydrocarbon group that may have an oxygen atom in the chain. These groups may not have an oxygen atom.
The divalent hydrocarbon linking group preferably has 1 to 24 carbon atoms, more preferably 2 to 12 carbon atoms, and even more preferably 2 to 6 carbon atoms. The divalent aliphatic hydrocarbon group preferably has 1 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and even more preferably 2 to 4 carbon atoms. The divalent aromatic hydrocarbon group preferably has 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, and even more preferably 6 to 10 carbon atoms. Groups containing a combination of a divalent aliphatic hydrocarbon group and a divalent aromatic hydrocarbon group (e.g., arylene alkyl groups) preferably have 7 to 22 carbon atoms, more preferably 7 to 18 carbon atoms, and even more preferably 7 to 10 carbon atoms.

Specifically, the linking group L is preferably a straight-chain or branched chain alkylene group, a cyclic alkylene group, a group containing a combination of a chain alkylene group and a cyclic alkylene group, an alkylene group having an oxygen atom in the chain, a straight-chain or branched chain alkenylene group, a cyclic alkenylene group, an arylene group, or an arylene alkylene group.
The linear or branched chain alkylene group preferably has 1 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and even more preferably 2 to 4 carbon atoms.
The cyclic alkylene group preferably has 3 to 12 carbon atoms, and more preferably has 3 to 6 carbon atoms.
The group containing a combination of a chain alkylene group and a cyclic alkylene group preferably has 4 to 24 carbon atoms, more preferably 4 to 12 carbon atoms, and even more preferably 4 to 6 carbon atoms.
The alkylene group having an oxygen atom in the chain may be linear or cyclic, and may be linear or branched. The alkylene group having an oxygen atom in the chain preferably has 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and even more preferably 1 to 3 carbon atoms.

The linear or branched chain alkenylene group preferably has 2 to 12 carbon atoms, more preferably 2 to 6, and still more preferably 2 to 3. The linear or branched chain alkenylene group preferably has 1 to 10 C═C bonds, more preferably 1 to 6, and still more preferably 1 to 3.
The cyclic alkenylene group preferably has 3 to 12 carbon atoms, and more preferably has 3 to 6 carbon atoms. The cyclic alkenylene group preferably has 1 to 6 C═C bonds, and more preferably has 1 to 4 C═C bonds, and even more preferably has 1 or 2 C═C bonds.
The arylene group preferably has 6 to 22 carbon atoms, more preferably has 6 to 18 carbon atoms, and further preferably has 6 to 10 carbon atoms.
The arylene alkylene group preferably has 7 to 23 carbon atoms, more preferably has 7 to 19 carbon atoms, and further preferably has 7 to 11 carbon atoms.
Among these, a chain alkylene group, a cyclic alkylene group, an alkylene group having an oxygen atom in the chain, a chain alkenylene group, an arylene group, and an arylene alkylene group are preferred, and a 1,2-ethylene group, a propanediyl group (particularly a 1,3-propanediyl group), a cyclohexanediyl group (particularly a 1,2-cyclohexanediyl group), a vinylene group (particularly a cisvinylene group), a phenylene group (1,2-phenylene group), a phenylenemethylene group (particularly a 1,2-phenylenemethylene group), and an ethyleneoxyethylene group (particularly a 1,2-ethyleneoxy-1,2-ethylene group) are more preferred.

Base generators include, but are not limited to, the following compounds:

The molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less. The lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.

Specific preferred compounds for the ionic base generator include, for example, the compounds described in paragraphs 0148 to 0163 of WO 2018/038002.

Specific examples of ammonium salts include, but are not limited to, the following compounds:

Specific examples of iminium salts include, but are not limited to, the following compounds:

In addition, the base generator is preferably an amine in which the amino group is protected by a t-butoxycarbonyl group, from the viewpoints of storage stability and generating a base by deprotection during curing.

Amine compounds protected by a t-butoxycarbonyl group include, for example, ethanolamine, 3-amino-1-propanol, 1-amino-2-propanol, 2-amino-1-propanol, 4-amino-1-butanol, 2-amino-1-butanol, 1-amino-2-butanol, 3-amino-2,2-dimethyl-1-propanol, 4-amino-2-methyl-1-butanol, valinol, 3-amino-1,2-propanediol, 2-amino-1,3-propanediol, Diol, tyramine, norephedrine, 2-amino-1-phenyl-1,3-propanediol, 2-aminocyclohexanol, 4-aminocyclohexanol, 4-aminocyclohexaneethanol, 4-(2-aminoethyl)cyclohexanol, N-methylethanolamine, 3-(methylamino)-1-propanol, 3-(isopropylamino)propanol, N-cyclohexylethanolamine, α-[2-(methylamino)ethyl]benzyl alcohol, diethano diisopropanolamine, 3-pyrrolidinol, 2-pyrrolidinemethanol, 4-hydroxypiperidine, 3-hydroxypiperidine, 4-hydroxy-4-phenylpiperidine, 4-(3-hydroxyphenyl)piperidine, 4-piperidinemethanol, 3-piperidinemethanol, 2-piperidinemethanol, 4-piperidineethanol, 2-piperidineethanol, 2-(4-piperidyl)-2-propanol, 1,4-butanolbis(3-aminopropyl)ethane ether, 1,2-bis(2-aminoethoxy)ethane, 2,2'-oxybis(ethylamine), 1,14-diamino-3,6,9,12-tetraoxatetradecane, 1-aza-15-crown-5-ether, diethylene glycol bis(3-aminopropyl)ether, 1,11-diamino-3,6,9-trioxaundecane, or compounds in which the amino group of an amino acid or a derivative thereof is protected with a t-butoxycarbonyl group, but are not limited to these.

When the resin composition contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass relative to 100 parts by mass of the resin in the resin composition. The lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less.
The base generator may be used alone or in combination of two or more. When two or more types are used, the total amount is preferably within the above range.

<Solvent>
The resin composition of the present invention preferably contains a solvent.
The solvent may be any known solvent. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.

Esters, for example, ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, γ-valerolactone, alkyloxyacetates (for example, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc. (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2- Suitable examples of alkyloxypropionic acid alkyl esters include alkyl esters (e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate, etc. (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, ethyl hexanoate, ethyl heptanoate, dimethyl malonate, diethyl malonate, etc.

Suitable examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, diethylene glycol ethyl methyl ether, propylene glycol monopropyl ether acetate, and dipropylene glycol dimethyl ether.

Preferred examples of ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, and dihydrolevoglucosenone.

Preferable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.

As an example of a sulfoxide, dimethyl sulfoxide is preferred.

Preferred examples of amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.

Preferred examples of ureas include N,N,N',N'-tetramethylurea and 1,3-dimethyl-2-imidazolidinone.

Alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methylamyl alcohol, and diacetone alcohol.

From the standpoint of improving the properties of the coating surface, it is also preferable to mix two or more types of solvents.

In the present invention, one solvent selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, γ-valerolactone, 3-methoxy-N,N-dimethylpropionamide, toluene, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more solvents, is preferred. Particularly preferred are a combination of dimethyl sulfoxide and γ-butyrolactone, a combination of dimethyl sulfoxide and γ-valerolactone, a combination of 3-methoxy-N,N-dimethylpropionamide and γ-butyrolactone, a combination of 3-methoxy-N,N-dimethylpropionamide, γ-butyrolactone and dimethyl sulfoxide, or a combination of N-methyl-2-pyrrolidone and ethyl lactate. An embodiment in which toluene is further added to these combined solvents in an amount of about 1 to 10% by mass based on the total mass of the solvent is also one of the preferred embodiments of the present invention.
In particular, from the viewpoint of storage stability of the resin composition, an embodiment containing γ-valerolactone as a solvent is one of the preferred embodiments of the present invention. In such an embodiment, the content of γ-valerolactone relative to the total mass of the solvent is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. The upper limit of the content is not particularly limited and may be 100% by mass. The content may be determined in consideration of the solubility of components such as a specific resin contained in the resin composition, etc.
Furthermore, when dimethyl sulfoxide and γ-valerolactone are used in combination, the solvent preferably contains 60 to 90% by mass of γ-valerolactone and 10 to 40% by mass of dimethyl sulfoxide, more preferably 70 to 90% by mass of γ-valerolactone and 10 to 30% by mass of dimethyl sulfoxide, and even more preferably 75 to 85% by mass of γ-valerolactone and 15 to 25% by mass of dimethyl sulfoxide, relative to the total mass of the solvent.

In particular, the second insulating pattern forming composition preferably contains, as the above-mentioned solvent B, a solvent containing a carbonyl group.
The solvent containing a carbonyl group includes the above-mentioned esters or ketones, and among these, a cyclic ester compound or a cyclic ketone compound is preferred, and it is preferable to include γ-butyrolactone or cyclopentanone.
Moreover, it is preferable that the solvent B contains at least one solvent selected from the group consisting of γ-butyrolactone, PGMEA, and cyclopentanone.

From the viewpoint of coatability, the content of the solvent is preferably an amount that results in a total solids concentration of the resin composition of the present invention of 5 to 80 mass%, more preferably an amount that results in a total solids concentration of 5 to 75 mass%, even more preferably an amount that results in a total solids concentration of 10 to 70 mass%, and even more preferably an amount that results in a total solids concentration of 20 to 70 mass%. The content of the solvent may be adjusted according to the desired thickness of the coating film and the coating method. When two or more types of solvents are contained, the total amount is preferably within the above range.

<Metal adhesion improver>
The resin composition of the present invention preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used in electrodes, wiring, etc. Examples of the metal adhesion improver include a silane coupling agent having an alkoxysilyl group, an aluminum-based adhesion aid, a titanium-based adhesion aid, a compound having a sulfonamide structure, a compound having a thiourea structure, a phosphoric acid derivative compound, a β-ketoester compound, and an amino compound.

〔Silane coupling agent〕
Examples of the silane coupling agent include the compounds described in paragraph 0316 of International Publication No. 2021/112189 and the compounds described in paragraphs 0067 to 0078 of JP-A-2018-173573, the contents of which are incorporated herein. In addition, it is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. It is also preferable to use the following compounds as the silane coupling agent. In the following formula, Me represents a methyl group, and Et represents an ethyl group. In addition, the following R includes a structure derived from a blocking agent in a blocked isocyanate group. The blocking agent may be selected according to the desorption temperature, and examples thereof include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds. For example, from the viewpoint of setting the desorption temperature at 160 to 180 ° C., caprolactam and the like are preferred. Commercially available products of such compounds include X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.).

Other silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2- (aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanurate, 3-ureidopropyltrialkoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, 3-trimethoxysilylpropylsuccinic anhydride. These can be used alone or in combination of two or more.
Furthermore, an oligomer type compound having a plurality of alkoxysilyl groups can also be used as the silane coupling agent.
Examples of such oligomer-type compounds include compounds containing a repeating unit represented by the following formula (S-1).

In formula (S-1), R ^{1 S1} represents a monovalent organic group, R ^{1 S2} represents a hydrogen atom, a hydroxyl group or an alkoxy group, and n represents an integer of 0 to 2.
R ^S1 is preferably a structure containing a polymerizable group. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group. Of these, a vinylphenyl group, a (meth)acrylamide group, or a (meth)acryloyloxy group is preferred, a vinylphenyl group or a (meth)acryloyloxy group is more preferred, and a (meth)acryloyloxy group is even more preferred.
R ^S2 is preferably an alkoxy group, more preferably a methoxy group or an ethoxy group.
n represents an integer of 0 to 2, and is preferably 1.
Here, the structures of the repeating units represented by formula (S-1) contained in the oligomer-type compound may be the same.
Here, among the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound, it is preferable that n is 1 or 2 in at least one, more preferably that n is 1 or 2 in at least two, and further preferably that n is 1 in at least two.
As such oligomer type compounds, commercially available products can be used, and an example of a commercially available product is KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[Aluminum-based adhesion promoter]
Examples of aluminum-based adhesion promoters include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), and ethylacetoacetate aluminum diisopropylate.

Other metal adhesion improvers that can be used include the compounds described in paragraphs 0046 to 0049 of JP 2014-186186 A and the sulfide-based compounds described in paragraphs 0032 to 0043 of JP 2013-072935 A, the contents of which are incorporated herein by reference.

The content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin. By making the content equal to or greater than the above lower limit, the adhesion between the pattern and the metal layer will be good, and by making the content equal to or less than the above upper limit, the heat resistance and mechanical properties of the pattern will be good. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, it is preferable that the total is within the above range.

<Migration inhibitor>
The resin composition of the present invention preferably further contains a migration inhibitor. By containing the migration inhibitor, for example, when the resin composition is applied to a metal layer (or metal wiring) to form a film, migration of metal ions derived from the metal layer (or metal wiring) into the film can be effectively suppressed.

There are no particular limitations on the migration inhibitor, but examples include compounds having a heterocycle (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring), thioureas and compounds having a sulfanyl group, hindered phenol compounds, salicylic acid derivative compounds, and hydrazide derivative compounds. In particular, triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole, and tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole are preferably used.

As a migration inhibitor, an ion trapping agent that captures anions such as halogen ions can also be used.

Other migration inhibitors that can be used include the rust inhibitors described in paragraph 0094 of JP 2013-015701 A, the compounds described in paragraphs 0073 to 0076 of JP 2009-283711 A, the compounds described in paragraph 0052 of JP 2011-059656 A, the compounds described in paragraphs 0114, 0116, and 0118 of JP 2012-194520 A, and the compounds described in paragraph 0166 of WO 2015/199219 A, the contents of which are incorporated herein by reference.

Specific examples of migration inhibitors include the following compounds:

When the resin composition of the present invention contains a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0 mass %, more preferably 0.05 to 2.0 mass %, and even more preferably 0.1 to 1.0 mass %, based on the total solid content of the resin composition.

The migration inhibitor may be one type or two or more types. When two or more types of migration inhibitors are used, it is preferable that the total is within the above range.

<Polymerization inhibitor>
The resin composition of the present invention preferably contains a polymerization inhibitor, such as a phenolic compound, a quinone compound, an amino compound, an N-oxyl free radical compound, a nitro compound, a nitroso compound, a heteroaromatic ring compound, or a metal compound.

Specific examples of the polymerization inhibitor include the compounds described in paragraph 0310 of WO 2021/112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, etc. The contents of this document are incorporated herein by reference.

When the resin composition of the present invention contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 20 mass % relative to the total solid content of the resin composition, more preferably 0.02 to 15 mass %, and even more preferably 0.05 to 10 mass %.

The polymerization inhibitor may be one type or two or more types. When two or more types of polymerization inhibitors are used, it is preferable that the total is within the above range.

<Light absorber>
The resin composition of the present invention also preferably contains a compound (light absorber) whose absorbance at the exposure wavelength decreases upon exposure.

Whether or not a certain compound a contained in a resin composition corresponds to a light absorbent (that is, whether or not its absorbance at the exposure wavelength decreases upon exposure) can be determined by the following method.
First, a solution of compound a is prepared at the same concentration as that contained in the resin composition, and the molar absorption coefficient of compound a at the wavelength of the exposure light (mol ^-1 ·L·cm ^-1 , also called "molar absorption coefficient 1") is measured. The measurement is carried out quickly so as to reduce the influence of changes such as a decrease in the molar absorption coefficient of compound a. When the resin composition contains a solvent, that solvent is used as the solvent in the solution, and when the resin composition does not contain a solvent, N-methyl-2-pyrrolidone is used.
Next, the solution of compound a is irradiated with exposure light, with the cumulative exposure dose being 500 mJ per mole of compound a.
Thereafter, the molar absorption coefficient (mol ⁻¹ ·L·cm ⁻¹ , also referred to as “molar absorption coefficient 2”) of compound a at the wavelength of the exposure light is measured using the solution of compound a after exposure.
From the above molar absorption coefficient 1 and molar absorption coefficient 2, the attenuation rate (%) is calculated based on the following formula. When the attenuation rate (%) is 5% or more, compound a is determined to be a compound whose absorbance at the exposure wavelength decreases upon exposure (i.e., a light absorber).
Extinction rate (%) = 1 - molar extinction coefficient 2 / molar extinction coefficient 1 x 100
The attenuation rate is preferably 10% or more, and more preferably 20% or more. There is no particular lower limit to the attenuation rate, so long as it is 0% or more.
When the resin composition is used to form a photosensitive film, the wavelength of the exposure light may be any wavelength that exposes the photosensitive film.
The wavelength of the exposure light is preferably a wavelength to which the photopolymerization initiator contained in the resin composition has sensitivity. The photopolymerization initiator has sensitivity to a certain wavelength, meaning that the photopolymerization initiator generates a polymerization initiating species when exposed to light of a certain wavelength.
The wavelength of the exposure light, in terms of its light source, may include (1) semiconductor laser (wavelengths 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.), (2) metal halide lamp, (3) high-pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, and i-lines), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F2 excimer laser (wavelength 157 nm), (5) extreme ultraviolet light; EUV (wavelength 13.6 nm), (6) electron beam, and (7) second harmonic 532 nm and third harmonic 355 nm of YAG laser.
The wavelength of the exposure light may be selected from those to which the photopolymerization initiator has sensitivity, and preferably, h-line (wavelength 405 nm) or i-line (wavelength 365 nm), more preferably i-line (wavelength 365 nm).

The light absorbent may be a compound that generates radical polymerization initiating species upon exposure to light, but from the viewpoints of resolution and chemical resistance, it is preferable that the light absorbent is a compound that does not generate radical polymerization initiating species upon exposure to light.
Whether or not a light absorbent is a compound that generates a radical polymerization initiating species upon exposure to light can be judged by the following method.
A solution containing a light absorber and a radical crosslinker at the same concentration as those contained in the resin composition is prepared. When the resin composition contains a radical crosslinker, the radical crosslinker in the solution is the same compound as the radical crosslinker contained in the resin composition and at the same concentration. When the resin composition does not contain a radical crosslinker, methyl methacrylate is used at a concentration five times that of the light absorber.
Thereafter, exposure light is irradiated to an integrated amount of 500 mJ.
After exposure, polymerization of the polymerizable compound is determined, for example, by high performance liquid chromatography, and if the ratio of the molar amount of the polymerized polymerizable compound to the total molar amount of the polymerizable compounds is 10% or less, the light absorber is determined to be a compound that does not generate radical polymerization initiating species upon exposure.
The molar ratio is preferably 5% or less, more preferably 3% or less. The lower limit of the molar ratio is not particularly limited, and may be 0%.
When the resin composition is used to form a photosensitive film, the wavelength of the exposure light may be any wavelength that exposes the photosensitive film.
The wavelength of the exposure light is preferably a wavelength to which the photopolymerization initiator contained in the resin composition has sensitivity.

Examples of the compound that generates a radical polymerization initiating species upon exposure include the same compounds as the above-mentioned photoradical polymerization initiator. When the composition contains a photoradical polymerization initiator as a light absorber, the compound that generates the radical species with the lowest polymerization initiation ability is the light absorber, and the rest are the photopolymerization initiators.
Examples of the compound that does not generate a radical polymerization initiating species upon exposure include a photoacid generator, a photobase generator, and a dye whose absorption wavelength changes upon exposure.
Among these, the light absorbent is preferably a naphthoquinone diazide compound or a dye whose absorbance changes upon exposure to light, and more preferably a naphthoquinone diazide compound.
As the light absorber, for example, a photoacid generator or a photobase generator may be used in combination with a compound whose absorbance at the exposure wavelength decreases depending on the pH.

[Naphthoquinone diazide compounds]
The naphthoquinone diazide compound includes a compound which generates indene carboxylic acid upon exposure and has a reduced absorbance at the exposure wavelength, and is preferably a compound having a 1,2-naphthoquinone diazide structure.
The naphthoquinone diazide compound is preferably a naphthoquinone diazide sulfonic acid ester of a hydroxy compound.
The hydroxy compound is preferably a compound represented by any one of the following formulas (H1) to (H6).

In formula (H1), ^R1 and ^R2 each independently represent a monovalent organic group, ^R3 and ^R4 each independently represent a hydrogen atom or a monovalent organic group, n1, n2, m1, and m2 each independently represent an integer of 0 to 5, and at least one of m1 and m2 is an integer of 1 to 5.
In formula (H2), Z represents a tetravalent organic group; L ¹ , L ² , L ³ and L ⁴ each independently represent a single bond or a divalent organic group; R ⁵ , R ⁶ , R ⁷ and R ⁸ each independently represent a monovalent organic group; n3, n4, n5 and n6 each independently represent an integer from 0 to 3; m3, m4, m5 and m6 each independently represent an integer from 0 to 2; and at least one of m3, m4, m5 and m6 is 1 or 2.
In formula (H3), R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a monovalent organic group; L ⁵ each independently represent a divalent organic group; and n7 represents an integer of 3 to 8.
In formula (H4), ^L6 represents a divalent organic group, and ^L7 and ^L8 each independently represent a divalent organic group containing an aliphatic tertiary or quaternary carbon.
In formula (H5), R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ , R ¹⁸ , R ¹⁹ and R ²⁰ each independently represent a hydrogen atom, a halogen atom or a monovalent organic group; L ⁹ , L ¹⁰ and L ¹¹ each independently represent a single bond or a divalent organic group; m7, m8, m9 and m10 each independently represent an integer of 0 to 2, and at least one of m7, m8, m9 and m10 is 1 or 2.
In formula (H6), R ⁴² , R ⁴³ , R ⁴⁴ , and R ⁴⁵ each independently represent a hydrogen atom or a monovalent organic group, R ⁴⁶ and R ⁴⁷ each independently represent a monovalent organic group, n16 and n17 each independently represent an integer of 0 to 4, m11 and m12 each independently represent an integer of 0 to 4, and at least one of m11 and m12 is an integer of 1 to 4.

In formula (H1), ^R1 and ^R2 are each preferably independently a monovalent organic group having 1 to 60 carbon atoms, and more preferably a monovalent organic group having 1 to 30 carbon atoms. Examples of the monovalent organic group in ^R1 and ^R2 include a hydrocarbon group which may have a substituent, such as an aromatic hydrocarbon group which may have a substituent such as a hydroxy group.
In formula (H1), ^R3 and ^R4 are each preferably independently a monovalent organic group having 1 to 60 carbon atoms, and more preferably a monovalent organic group having 1 to 30 carbon atoms. Examples of the monovalent organic group in ^R3 and ^R4 include a hydrocarbon group which may have a substituent, such as a hydroxyl group or the like.
In formula (H1), n1 and n2 each independently represent preferably 0 or 1, and more preferably 0.
In formula (H1), it is preferable that both m1 and m2 are 1.

The compound represented by formula (H1) is preferably a compound represented by any one of formulas (H1-1) to (H1-5).

In formula (H1-1), R ²¹ , R ²² and R ²³ each independently represent a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and more preferably a hydrogen atom or a group represented by the following formula (R-1):

In formula (R-1), R ²⁹ represents a hydrogen atom, an alkyl group or an alkoxy group, n13 represents an integer of 0 to 2, and * represents a bonding site to another structure.
In (H1-1), n8, n9 and n10 each independently represent an integer of 0 to 2, and preferably 0 or 1.

In formula (H1-2), R ²⁴ represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an alkoxy group having 1 to 20 carbon atoms. n14, n15, and n16 each independently represent an integer of 0 to 2. R ³⁰ represents a hydrogen atom or an alkyl group.

In formula (H1-3), R ²⁵ , R ²⁶ , R ²⁷ and R ²⁸ each independently represent a monovalent organic group, and are preferably a hydrogen atom, an alkyl group or a group represented by the above formula (R-1).
In formula (H1-3), n11, n12 and n13 each independently represent an integer of 0 to 2, and preferably 0 or 1.

The compound represented by formula (H1-1) is preferably a compound represented by any one of the following formulas (H1-1-1) to (H1-1-4).
The compound represented by formula (H1-2) is preferably a compound represented by the following formula (H1-2-1) or (H1-2-2).
The compound represented by formula (H1-3) is preferably a compound represented by the following formulas (H1-3-1) to (H1-3-3).

In formula (H2), Z is preferably a tetravalent group having 1 to 20 carbon atoms, and more preferably a group represented by any one of the following formulae (Z-1) to (Z-4): In the following formulae (Z-1) to (Z-4), * represents a bonding site to other structures.

In formula (H2), it is preferable that L ¹ , L ² , L ³ and L ⁴ each independently represent a single bond or a methylene group.
In formula (H2), R ⁵ , R ⁶ , R ⁷ and R ⁸ are preferably each independently an organic group having 1 to 30 carbon atoms.
In formula (H2), n3, n4, n5 and n6 each independently represent an integer of 0 to 2, and more preferably 0 or 1.
In formula (H2), m3, m4, m5 and m6 each independently preferably represent 1 or 2, and more preferably represent 1.
Examples of the compound represented by formula (H2) include compounds having the following structures:

In formula (H3), it is preferable that R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
In formula (H3), it is preferable that each ^L5 independently represents a group represented by the following formula (L-1).

In formula (L-1), R ³⁰ represents a monovalent organic group having 1 to 20 carbon atoms, n14 represents an integer of 1 to 5, and * represents a bonding site to another structure.
In formula (H3), n7 is preferably an integer of 4 to 6.
Examples of the compound represented by formula (H3) include the following compounds: In the following formula, each n independently represents an integer of 0 to 9.

In formula (H4), L ⁶ is preferably —C(CF ₃ ) ₂ —, —S(═O) ₂ — or —C(═O)—.
In formula (H4), L ⁷ and L ⁸ are preferably each independently a divalent organic group having 2 to 20 carbon atoms.
Examples of the compound represented by formula (H4) include the following compounds.

In formula (H5), ^R11 , ^R12 , ^R13 , ^R14 , ^R15 , ^R16 , ^R17 , ^R18 , ^R19 and ^R20 are each preferably independently a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an allyl group or an acyl group.
In formula (H5), L ⁹ , L ¹⁰ and L ¹¹ each independently represent preferably a single bond, -O-, -S-, -S(═O) ₂ -, -C(═O)-, -C(═O)O-, cyclopentylidene, cyclohexylidene, phenylene or a divalent organic group having 1 to 20 carbon atoms, and more preferably a group represented by any of the following formulae (L-2) to (L-4).

In formulas (L-2) to (L-4), R ³¹ and R ³² each independently represent a hydrogen atom, an alkyl group, an alkenyl group, or an aryl group; R ³⁴ , R ³⁵ , R ³⁶ , and R ³⁷ each independently represent a hydrogen atom or an alkyl group; n15 is an integer of 1 to 5; R ³⁸ , R ³⁹ , R ⁴⁰ , and R ⁴¹ each independently represent a hydrogen atom or an alkyl group; and * represents a bonding site to another structure.
Examples of the compound represented by formula (H5) include the following compounds.

In formula (H6), R ⁴² , R ⁴³ , R ⁴⁴ , and R ⁴⁵ each independently represent a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, more preferably a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, and more preferably an alkyl group having 1 to 4 carbon atoms.
In formula (H6), R ⁴⁶ and R ⁴⁷ each independently preferably represent an alkyl group, an alkoxy group or an aryl group, more preferably an alkyl group.
In formula (H6), n16 and n17 each independently represent preferably an integer of 0 to 2, and more preferably 0 or 1.
In formula (H6), n16 and n17 each independently represent preferably an integer of 1 to 3, and more preferably 2 or 3.
Examples of the compound represented by formula (H6) include the following compounds.

Other examples of hydroxy compounds include polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,3,4-trihydroxy-2'-methylbenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,4,6,3',4'-pentahydroxybenzophenone, 2,3,4,2',4'-pentahydroxybenzophenone, 2,3,4,2',5'-pentahydroxybenzophenone, 2,4,6,3',4',5'-hexahydroxybenzophenone, and 2,3,4,3',4',5'-hexahydroxybenzophenone;
polyhydroxyphenyl alkyl ketones such as 2,3,4-trihydroxyacetophenone, 2,3,4-trihydroxyphenyl pentyl ketone, and 2,3,4-trihydroxyphenyl hexyl ketone;
bis((poly)hydroxyphenyl)alkanes such as bis(2,4-dihydroxyphenyl)methane, bis(2,3,4-trihydroxyphenyl)methane, bis(2,4-dihydroxyphenyl)propane-1, bis(2,3,4-trihydroxyphenyl)propane-1, nordihydroguaiaretic acid, and 1,1-bis(4-hydroxyphenyl)cyclohexane;
Polyhydroxybenzoic acid esters such as propyl 3,4,5-trihydroxybenzoate, phenyl 2,3,4-trihydroxybenzoate, and phenyl 3,4,5-trihydroxybenzoate;
bis(polyhydroxybenzoyl)alkanes or bis(polyhydroxybenzoyl)aryls such as bis(2,3,4-trihydroxybenzoyl)methane, bis(3-acetyl-4,5,6-trihydroxyphenyl)methane, bis(2,3,4-trihydroxybenzoyl)benzene, and bis(2,4,6-trihydroxybenzoyl)benzene;
Alkylene di(polyhydroxybenzoates) such as ethylene glycol di(3,5-dihydroxybenzoate) and ethylene glycol di(3,4,5-trihydroxybenzoate);
polyhydroxybiphenyls such as 2,3,4-biphenyltriol, 3,4,5-biphenyltriol, 3,5,3',5'-biphenyltetrol, 2,4,2',4'-biphenyltetrol, 2,4,6,3',5'-biphenylpentol, 2,4,6,2',4',6'-biphenylhexol, and 2,3,4,2',3',4'-biphenylhexol;
bis(polyhydroxy)sulfides such as 4,4'-thiobis(1,3-dihydroxy)benzene;
bis(polyhydroxyphenyl)ethers such as 2,2',4,4'-tetrahydroxydiphenyl ether;
bis(polyhydroxyphenyl)sulfoxides such as 2,2',4,4'-tetrahydroxydiphenylsulfoxide;
bis(polyhydroxyphenyl)sulfones such as 2,2',4,4'-diphenylsulfone,
Tris(4-hydroxyphenyl)methane, 4,4',4"-trihydroxy-3,5,3',5'-tetramethyltriphenylmethane, 4,4',3",4"-tetrahydroxy-3,5,3',5'-tetramethyltriphenylmethane, 4-[bis(3,5-dimethyl-4-hydroxyphenyl)methyl]-2-methoxy-phenol, 4,4'-(3,4-diol-benzylidene)bis[2,6-dimethylphenol], 4,4'-[(2-hydroxy-phenyl)methylene]bis[2-cyclohexyl-5-methylphenol], 4,4',2",3",4"-pentahydroxy-3,5,3',5' -tetramethyltriphenylmethane, 2,3,4,2',3',4'-hexahydroxy-5,5'-diacetyltriphenylmethane, 2,3,4,2',3',4',3",4"-octahydroxy-5,5'-diacetyltriphenylmethane, 2,4,6,2',4',6'-hexahydroxy-5,5'-dipropionyltriphenylmethane and other polyhydroxytriphenylmethanes; 4,4'-(phenylmethylene)bisphenol, 4,4'-(1-phenyl-ethylidene)bis[2-methylphenol], 4,4',4"-ethylidene-trisphenol and other polyhydroxytriphenylethanes;
Polyhydroxy spirobyindanes such as 3,3,3',3'-tetramethyl-1,1'-spirobi-indan-5,6,5',6'-tetrol, 3,3,3',3'-tetramethyl-1,1'-spirobi-indan-5,6,7,5',6',7'-hexol, 3,3,3',3'-tetramethyl-1,1'-spirobi-indan-4,5,6,4',5',6'-hexol, and 3,3,3',3'-tetramethyl-1,1'-spirobi-indan-4,5,6,5',6',7'-hexool; polyhydroxy flavans such as 2,4,4-trimethyl-2',4',7'-trihydroxy flavan;
Polyhydroxyphthalides such as 3,3-bis(3,4-dihydroxyphenyl)phthalide, 3,3-bis(2,3,4-trihydroxyphenyl)phthalide, and 3',4',5',6'-tetrahydroxyspiro[phthalide-3,9'-xanthene]; flavonoid pigments such as morin, quercetin, and rutin;
α,α',α"-tris(4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(3,5-dimethyl-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(3,5-diethyl-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(3,5-di-n-propyl-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(3,5-diisopropyl-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(3,5-di-n-butyl-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α" -Tris(3-methyl-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(3-methoxy-4-hydroxyphenyl)1,3,5-triisopropylbenzene, α,α',α"-tris(2,4-dihydroxyphenyl)1,3,5-triisopropylbenzene, 1,3,5-tris(3,5-dimethyl-4-hydroxyphenyl)benzene, 1,3,5-tris(5-methyl-2-hydroxyphenyl)benzene, 2,4,6-tris(3,5-dimethyl-4-hydroxyphenylthiomethyl)mesitylene, 1-[α-methyl-α-(4'-hydroxyphenyl)ethyl]-4-[α,α'-bis(4"-hydroxyphenyl)ethyl]benzene, 1-[α-methyl 1-[α-methyl-α-(3',5'-dimethyl-4'-hydroxyphenyl)ethyl]-4-[α,α'-bis(3",5"-dimethyl-4"-hydroxyphenyl)ethyl]benzene, 1-[α-methyl(3'-methyl-4'-hydroxyphenyl)ethyl]-4-[α',α'-bis(3"-methyl-4"-hydroxyphenyl)ethyl]benzene, 1-[α-methyl-α-(3'-methoxy-4'-hydroxyphenyl)ethyl]-4-[α',α'-bis(3"-methoxy-4"-hydroxyphenyl)ethyl]benzene, 1-[α-methyl-α-(2',4'-dihydroxyphenyl)ethyl]-4-[α',α'-bis(3"-methoxy-4"-hydroxyphenyl)ethyl]benzene, polyhydroxy compounds described in JP-A-4-253058, such as α,α,α',α',α",α"-hexakis-(4-hydroxyphenyl)-1,3,5-triethylbenzene; poly(hydroxyphenyl)alkanes described in JP-A-5-303200 and EP-530148, such as 1,2,2,3-tetra(p-hydroxyphenyl)propane and 1,3,3,5-tetra(p-hydroxyphenyl)pentane;
p-bis(2,3,4-trihydroxybenzoyl)benzene, p-bis(2,4,6-trihydroxybenzoyl)benzene, m-bis(2,3,4-trihydroxybenzoyl)benzene, m-bis(2,4,6-trihydroxybenzoyl)benzene, p-bis(2,5-dihydroxy-3-bromobenzoyl)benzene, p-bis(2,3,4-trihydroxy-5-methylbenzoyl)benzene, p-bis(2,3,4-trihydroxy-5-methoxybenzoyl)benzene, p-bis(2,3,4-trihydroxy-5-nitrobenzoyl)benzene, p-bis(2,3,4- trihydroxy-5-cyanobenzoyl)benzene, 1,3,5-tris(2,5-dihydroxybenzoyl)benzene, 1,3,5-tris(2,3,4-trihydroxybenzoyl)benzene, 1,2,3-tris(2,3,4-trihydroxybenzoyl)benzene, 1,2,4-tris(2,3,4-trihydroxybenzoyl)benzene, 1,2,4,5-tetrakis(2,3,4-trihydroxybenzoyl)benzene, α,α'-bis(2,3,4-trihydroxybenzoyl)p-xylene, α,α',α'-tris(2,3,4-trihydroxybenzoyl)mesylene,
2,6-bis-(2-hydroxy-3,5-dimethylbenzyl)-p-cresol, 2,6-bis-(2-hydroxy-5'-methylbenzyl)-p-cresol, 2,6-bis-(2,4,6-trihydroxybenzyl)-p-cresol, 2,6-bis-(2,3,4-trihydroxybenzyl)-p-cresol, 2,6-bis-(2,3,4-trihydroxybenzyl)-3,5-dimethyl-phenol, 4,6-bis-(4-hydroxy-3,5-dimethylbenzyl)-pyrogallol, 2,6-bis-(4 -hydroxy-3,5-dimethylbenzyl)-1,3,4-trihydroxy-phenol, 4,6-bis-(2,4,6-trihydroxybenzyl)-2,4-dimethyl-phenol, 4,6-bis-(2,3,4-trihydroxybenzyl)-2,5-dimethyl-phenol, 2,6-bis-(4-hydroxybenzyl)-p-cresol, 2,6-bis(4-hydroxybenzyl)-4-cyclohexylphenol, 2,6-bis(4-hydroxy-3-methylbenzyl)-p-cresol, 2,6-bis(4- hydroxy-3,5-dimethylbenzyl)-p-cresol, 2,6-bis(4-hydroxy-2,5-dimethylbenzyl)-p-cresol, 2,6-bis(4-hydroxy-3-methylbenzyl)-4-phenyl-phenol, 2,2',6,6'-tetrakis[(4-hydroxyphenyl)methyl]-4,4'-methylenediphenol, 2,2',6,6'-tetrakis[(4-hydroxy-3,5-dimethylphenyl)methyl]-4,4'-methylenediphenol, 2,2',6,6'-tetrakis[(4 -hydroxy-3-methylphenyl)methyl]-4,4'-methylenediphenol, 2,2'-bis[(4-hydroxy-3,5-dimethylphenyl)methyl]6,6'-dimethyl-4,4'-methylenediphenol, 2,2',3,3'-tetrahydro-3,3,3',3'-tetramethyl-1,1'-spirobi(1H-indene)-5,5',6,6',7,7'hexanol, bis(4-hydroxy-3,5-dimethylphenyl)-(4-hydroxy-3-methoxyphenyl)methane, and the like can be mentioned.
Furthermore, low molecular weight phenolic resins such as novolak resins can also be used.

Naphthoquinone diazide sulfonic acids include 6-diazo 5,6-dihydro-5-oxo-1-naphthalene sulfonic acid, 1,2-naphthoquinone-(2)-diazo-5-sulfonic acid, etc., which may be used in combination.

The method for producing a naphthoquinone diazide sulfonate ester of a hydroxy compound is not particularly limited. For example, the ester can be obtained by converting naphthoquinone diazide sulfonic acid into a sulfonyl chloride with chlorosulfonic acid or thionyl chloride, and then subjecting the resulting naphthoquinone diazide sulfonyl chloride to a condensation reaction with the hydroxy compound.
For example, a hydroxy compound and a predetermined amount of naphthoquinone diazide sulfonyl chloride are reacted in a solvent such as dioxane, acetone, or tetrahydrofuran in the presence of a basic catalyst such as triethylamine to carry out esterification, and the resulting product is washed with water and dried to obtain the compound.

The esterification rate of the naphthoquinone diazide sulfonic acid ester is not particularly limited, but is preferably 10% or more, and more preferably 20% or more. The upper limit of the esterification rate is not particularly limited, and may be 100%.
The above-mentioned esterification rate can be confirmed by ¹ H-NMR or the like as the proportion of esterified groups among the hydroxy groups contained in the hydroxy compound.

In addition, the compounds described in paragraphs 0088 to 0108 of JP 2019-206689 A can also be used as light absorbents.

The content of the light absorber relative to the total solid content of the resin composition of the present invention is not particularly limited, but is preferably 0.1 to 20 mass%, more preferably 0.5 to 10 mass%, and even more preferably 1 to 5 mass%.

<Other additives>
The resin composition of the present invention may contain various additives, such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, ultraviolet absorbers, organic titanium compounds, antioxidants, aggregation inhibitors, phenolic compounds, other polymer compounds, plasticizers and other auxiliaries (e.g., defoamers, flame retardants, etc.), as necessary, within the scope in which the effects of the present invention can be obtained. By appropriately incorporating these components, it is possible to adjust the properties of the film physical properties, etc. These components can be referred to, for example, in the description of paragraphs 0183 and onward of JP-A-2012-003225 (corresponding to paragraph 0237 of US Patent Application Publication No. 2013/0034812), and in the description of paragraphs 0101 to 0104, 0107 to 0109, etc. of JP-A-2008-250074, the contents of which are incorporated herein. When these additives are blended, it is preferable that the total content thereof is 3% by mass or less of the solid content of the resin composition of the present invention.

[Surfactant]
As the surfactant, various surfactants such as a fluorine-based surfactant, a silicone-based surfactant, a hydrocarbon-based surfactant, etc. The surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.

By including a surfactant in the photosensitive resin composition of the present invention, the liquid properties (particularly fluidity) when the coating liquid composition is prepared can be further improved, and the uniformity of the coating thickness and liquid saving can be further improved. In other words, when a film is formed using a coating liquid containing a surfactant, the interfacial tension between the surface to be coated and the coating liquid is reduced, improving the wettability of the surface to be coated and improving the coatability of the surface to be coated. This makes it possible to more suitably form a uniform film with minimal unevenness in thickness.

Examples of fluorosurfactants include compounds described in paragraph 0328 of WO 2021/112189, the contents of which are incorporated herein by reference.
As the fluorine-based surfactant, a fluorine-containing polymer compound containing a repeating unit derived from a (meth)acrylate compound having a fluorine atom and a repeating unit derived from a (meth)acrylate compound having two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy groups, propyleneoxy groups) can also be preferably used. Examples of the fluorine-based surfactant include the following compounds.

The weight average molecular weight of the above compound is preferably from 3,000 to 50,000, and more preferably from 5,000 to 30,000.
As the fluorosurfactant, a fluorine-containing polymer having an ethylenically unsaturated group in the side chain can also be used as the fluorosurfactant. Specific examples include the compounds described in paragraphs 0050 to 0090 and 0289 to 0295 of JP-A-2010-164965, the contents of which are incorporated herein by reference. In addition, examples of commercially available products include Megafac RS-101, RS-102, RS-718K, etc., manufactured by DIC Corporation.

The fluorine content in the fluorosurfactant is preferably 3 to 40 mass%, more preferably 5 to 30 mass%, and particularly preferably 7 to 25 mass%. Fluorine surfactants with a fluorine content within this range are effective in terms of uniformity of the coating film thickness and liquid saving, and also have good solubility in the composition.

　Examples of silicone surfactants, hydrocarbon surfactants, nonionic surfactants, cationic surfactants, and anionic surfactants include the compounds described in paragraphs 0329 to 0334 of WO 2021/112189, the contents of which are incorporated herein by reference.

The surfactant may be used alone or in combination of two or more kinds.
The content of the surfactant is preferably from 0.001 to 2.0% by mass, and more preferably from 0.005 to 1.0% by mass, based on the total solid content of the composition.

[Higher fatty acid derivatives]
In order to prevent polymerization inhibition caused by oxygen, a higher fatty acid derivative such as behenic acid or behenic acid amide may be added to the resin composition of the present invention, and the higher fatty acid derivative may be unevenly distributed on the surface of the resin composition of the present invention during drying after application.

In addition, the higher fatty acid derivative may be a compound described in paragraph 0155 of International Publication No. 2015/199219, the contents of which are incorporated herein by reference.

When the resin composition contains a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably 0.1 to 10 mass% based on the total solid content of the resin composition. There may be only one type of higher fatty acid derivative, or two or more types. When there are two or more types of higher fatty acid derivatives, the total is preferably within the above range.

[Thermal Polymerization Initiator]
Examples of the thermal polymerization initiator include a thermal radical polymerization initiator. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes a polymerization reaction of a polymerizable compound. The addition of a thermal radical polymerization initiator can also advance the polymerization reaction of a resin and a polymerizable compound, thereby improving the solvent resistance. In addition, a photopolymerization initiator may also have a function of initiating polymerization by heat, and may be added as a thermal polymerization initiator.

Specific examples of thermal radical polymerization initiators include the compounds described in paragraphs 0074 to 0118 of JP 2008-063554 A, the contents of which are incorporated herein by reference.

When a thermal polymerization initiator is included, its content is preferably 0.1 to 30 mass% relative to the total solid content of the resin composition, more preferably 0.1 to 20 mass%, and even more preferably 0.5 to 15 mass%. Only one type of thermal polymerization initiator may be included, or two or more types may be included. When two or more types of thermal polymerization initiators are included, it is preferable that the total amount is within the above range.

[Inorganic particles]
Specific examples of inorganic particles include calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, molybdenum sulfide, and glass.

The average particle size of the inorganic particles is preferably from 0.01 to 2.0 μm, more preferably from 0.02 to 1.5 μm, even more preferably from 0.03 to 1.0 μm, and particularly preferably from 0.04 to 0.5 μm.
The above average particle size of the inorganic particles is the primary particle size and also the volume average particle size. The volume average particle size can be measured by a dynamic light scattering method using, for example, a Nanotrac WAVE II EX-150 (manufactured by Nikkiso Co., Ltd.).
When the above measurements are difficult, the measurements can also be made by centrifugal sedimentation light transmission method, X-ray transmission method, or laser diffraction/scattering method.

[Ultraviolet absorber]
Examples of the ultraviolet absorbing agent include salicylate-based, benzophenone-based, benzotriazole-based, substituted acrylonitrile-based, and triazine-based ultraviolet absorbing agents.
Specific examples of the ultraviolet absorber include the compounds described in paragraphs 0341 to 0342 of WO 2021/112189, the contents of which are incorporated herein by reference.

The ultraviolet absorbing agents may be used alone or in combination of two or more.
When the resin composition contains an ultraviolet absorber, the content of the ultraviolet absorber is preferably 0.001 mass % or more and 1 mass % or less, and more preferably 0.01 mass % or more and 0.1 mass % or less, based on the total solid mass of the resin composition.

[Organotitanium Compounds]
By including an organotitanium compound in the resin composition, a resin layer having excellent chemical resistance can be formed even when cured at a low temperature.

Usable organotitanium compounds include those in which an organic group is bonded to a titanium atom via a covalent bond or an ionic bond.
Specific examples of the organotitanium compound are shown below in I) to VII):
I) Titanium chelate compounds: Titanium chelate compounds having two or more alkoxy groups are more preferred because they provide good storage stability for the resin composition and provide a good curing pattern. Specific examples include titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate), titanium diisopropoxide bis(tetramethylheptanedionate), titanium diisopropoxide bis(ethylacetoacetate), etc.
II) Tetraalkoxytitanium compounds: for example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide, titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis{2,2-(allyloxymethyl)butoxide}], and the like.
III) Titanocene compounds: For example, pentamethylcyclopentadienyltitanium trimethoxide, bis(η5-2,4-cyclopentadiene-1-yl)bis(2,6-difluorophenyl)titanium, bis(η5-2,4-cyclopentadiene-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium, and the like.
IV) Monoalkoxytitanium compounds: For example, titanium tris(dioctylphosphate) isopropoxide, titanium tris(dodecylbenzenesulfonate) isopropoxide, etc.
V) Titanium oxide compounds: For example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide, and the like.
VI) Titanium tetraacetylacetonate compounds: For example, titanium tetraacetylacetonate.
VII) Titanate coupling agents: for example, isopropyl tridodecylbenzenesulfonyl titanate.

Among these, from the viewpoint of better chemical resistance, the organic titanium compound is preferably at least one compound selected from the group consisting of I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds. In particular, titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), and bis(η5-2,4-cyclopentadiene-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium are preferred.

When an organic titanium compound is included, its content is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 2 parts by mass, per 100 parts by mass of the specific resin. If the content is 0.05 parts by mass or more, the heat resistance and chemical resistance of the resulting cured pattern will be better, and if it is 10 parts by mass or less, the storage stability of the composition will be superior.

〔Antioxidant〕
By including an antioxidant as an additive, it is possible to improve the elongation properties of the cured film and the adhesion to the metal material. Examples of the antioxidant include phenol compounds, phosphite compounds, and thioether compounds. Specific examples of the antioxidant include the compounds described in paragraphs 0348 to 0357 of WO 2021/112189, the contents of which are incorporated herein by reference.

The content of the antioxidant is preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin. By adding an amount of 0.1 part by mass or more, it is easier to obtain the effect of improving the elongation properties and adhesion to metal materials even in a high-temperature and high-humidity environment, and by adding an amount of 10 parts by mass or less, the sensitivity of the resin composition is improved, for example, through interaction with the photosensitizer. Only one type of antioxidant may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above range.

[Anti-aggregation agent]
The anti-agglomerating agent may, for example, be sodium polyacrylate.

The anti-aggregating agents may be used alone or in combination of two or more.
When the resin composition contains an anti-aggregation agent, the content of the anti-aggregation agent is preferably 0.01 mass % or more and 10 mass % or less, and more preferably 0.02 mass % or more and 5 mass % or less, relative to the total solid content mass of the resin composition.

[Phenol compounds]
Examples of phenolic compounds include Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylenetris-FR-CR, BisRS-26X (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIP-PC, BIR-PC, BIR-PTBP, and BIR-BIPC-F (all trade names, manufactured by Asahi Organic Chemicals Co., Ltd.).

The phenol-based compounds may be used alone or in combination of two or more.
When the resin composition contains a phenol-based compound, the content of the phenol-based compound is preferably 0.01 mass % or more and 30 mass % or less, and more preferably 0.02 mass % or more and 20 mass % or less, relative to the total solid mass of the resin composition.

[Other polymer compounds]
Examples of the other polymer compounds include siloxane resins, (meth)acrylic polymers copolymerized with (meth)acrylic acid, novolac resins, resol resins, polyhydroxystyrene resins, and copolymers thereof. The other polymer compounds may be modified by introducing a crosslinking group such as a methylol group, an alkoxymethyl group, or an epoxy group.

The other polymer compounds may be used either individually or in combination of two or more.
When the resin composition contains other polymer compounds, the content of the other polymer compounds is preferably 0.01 mass % or more and 30 mass % or less, and more preferably 0.02 mass % or more and 20 mass % or less, relative to the total solid mass of the resin composition.

<Characteristics of Resin Composition>
The kinetic viscosity of the resin composition of the present invention can be adjusted by the solid content concentration of the resin composition. From the viewpoint of the coating film thickness, it is preferably 50 mm ² /s to 10,000 mm ² /s, more preferably 100 mm ² /s to 5,000 mm ² /s, and even more preferably 300 mm ² /s to 1,000 mm ² /s. If it is within the above range, it is easy to obtain a coating film with high uniformity. If it is 1,000 mm ² /s or more, it is easy to apply it with a film thickness required for, for example, a rewiring insulating film, and if it is 12,000 mm ² /s or less, a coating film with excellent coating surface condition can be obtained.

<Restrictions on substances contained in resin composition>
The water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If the water content is less than 2.0%, the storage stability of the resin composition is improved.
Methods for maintaining the moisture content include adjusting the humidity during storage and reducing the porosity of the container during storage.

From the viewpoint of insulation, the metal content of the resin composition of the present invention is preferably less than 5 ppm by mass (parts per million), more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass. Examples of metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, nickel, etc., but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are contained, it is preferable that the total of these metals is within the above range.

In addition, methods for reducing metal impurities unintentionally contained in the resin composition of the present invention include selecting raw materials with a low metal content as the raw materials constituting the resin composition of the present invention, filtering the raw materials constituting the resin composition of the present invention, lining the inside of the apparatus with polytetrafluoroethylene or the like and performing distillation under conditions that suppress contamination as much as possible, etc.

Considering the use of the resin composition of the present invention as a semiconductor material, the content of halogen atoms is preferably less than 500 mass ppm, more preferably less than 300 mass ppm, and even more preferably less than 200 mass ppm from the viewpoint of wiring corrosion.Among them, those present in the form of halogen ions are preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm.Halogen atoms include chlorine atoms and bromine atoms.It is preferable that the total of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, is within the above range.
A preferred method for adjusting the content of halogen atoms is ion exchange treatment.

A conventionally known container can be used as the container for the resin composition of the present invention. As the container, it is also preferable to use a multi-layer bottle whose inner wall is made of six types of six layers of resin, or a bottle with a seven-layer structure of six types of resin, in order to prevent impurities from being mixed into the raw materials or the resin composition of the present invention. An example of such a container is the container described in JP 2015-123351 A.

<Cured Product of Resin Composition>
By curing the resin composition of the present invention, a cured product of the resin composition can be obtained.
This cured product corresponds to the above-mentioned first insulating pattern or the above-mentioned second insulating pattern.
The resin composition is preferably cured by heating, and the heating temperature is more preferably 120°C to 400°C, further preferably 140°C to 380°C, and particularly preferably 170°C to 350°C. The form of the cured product of the resin composition is not particularly limited, and can be selected according to the application, such as a film, a rod, a sphere, or a pellet. In the present invention, the cured product is preferably a film. By pattern processing of the resin composition, the shape of the cured product can be selected according to the application, such as forming a protective film on the wall surface, forming a via hole for conduction, adjusting impedance, electrostatic capacitance or internal stress, and imparting a heat dissipation function. The film thickness of the cured product (film made of the cured product) is preferably 0.5 μm or more and 150 μm or less.
The shrinkage percentage of the resin composition of the present invention when cured is preferably 50% or less, more preferably 45% or less, and even more preferably 40% or less. Here, the shrinkage percentage refers to the percentage of the volume change before and after curing of the resin composition, and can be calculated by the following formula.
Shrinkage rate [%] = 100 - (volume after curing ÷ volume before curing) x 100

<Characteristics of the cured product of the resin composition>
The imidization reaction rate of the cured product of the resin composition of the present invention is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. If it is 70% or more, the cured product may have excellent mechanical properties.
The breaking elongation of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more.
The glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180° C. or higher, more preferably 210° C. or higher, and even more preferably 230° C. or higher.

<Preparation of Resin Composition>
The resin composition of the present invention can be prepared by mixing the above-mentioned components. The mixing method is not particularly limited, and can be a conventionally known method.
Examples of the mixing method include mixing with a stirring blade, mixing with a planetary stirrer, mixing with a ball mill, and mixing by rotating a tank.
The temperature during mixing is preferably from 10 to 30°C, more preferably from 15 to 25°C.

In order to remove foreign matter such as dust and fine particles from the resin composition of the present invention, it is preferable to perform filtration using a filter. The filter pore size is, for example, preferably 5 μm or less, more preferably 1 μm or less, even more preferably 0.5 μm or less, and even more preferably 0.1 μm or less. The material of the filter is preferably polytetrafluoroethylene, polyethylene, or nylon. When the material of the filter is polyethylene, it is more preferable that it is HDPE (high density polyethylene). The filter may be used after being washed in advance with an organic solvent. In the filter filtration process, multiple types of filters may be connected in series or parallel. When multiple types of filters are used, filters with different pore sizes or materials may be used in combination. As an example of a connection mode, an HDPE filter with a pore size of 1 μm as the first stage and an HDPE filter with a pore size of 0.2 μm as the second stage may be connected in series. In addition, various materials may be filtered multiple times. When filtration is performed multiple times, circulation filtration may be performed. Filtration may also be performed under pressure. When filtration is performed under pressure, the pressure to be applied is, for example, preferably 0.01 MPa or more and 1.0 MPa or less, more preferably 0.03 MPa or more and 0.9 MPa or less, even more preferably 0.05 MPa or more and 0.7 MPa or less, and even more preferably 0.05 MPa or more and 0.5 MPa or less.
In addition to filtration using a filter, impurity removal treatment using an adsorbent may be performed. Filter filtration and impurity removal treatment using an adsorbent may be combined. As the adsorbent, a known adsorbent may be used. For example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon may be used.
After filtration using a filter, the resin composition filled in the bottle may be subjected to a degassing step by placing it under reduced pressure.

The present invention will be explained in more detail below with reference to examples. The materials, amounts used, ratios, processing contents, processing procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. "Parts" and "%" are based on mass unless otherwise specified.

<Production of Resin Composition>
In each formulation, the components shown in the table below were mixed to obtain each resin composition.
Specifically, the content (blended amount) of each component shown in the table is the amount (parts by mass) shown in the "parts by mass" column of each column in the table.
The obtained resin composition was pressure filtered using a polytetrafluoroethylene filter having a pore width of 0.5 μm.
In the table, "-" indicates that the composition does not contain the corresponding component.

Details of each ingredient listed in the table are as follows:

〔resin〕
A-1 to A-10: Compounds having the following structure CA-1: Divinylbenzene/p-hydroxystyrene/styrene copolymer

<Synthesis Example 1>
[Synthesis of polyimide precursor (resin A-5)]
155.0 g of 4,4'-oxydiphthalic anhydride was placed in a 2 L separable flask, 134.0 g of 2-hydroxyethyl methacrylate (HEMA) and 400 mL of γ-butyrolactone were added, and 79.1 g of pyridine was added while stirring at room temperature to obtain a reaction mixture. After the heat generation due to the reaction had ceased, the mixture was allowed to cool to room temperature and then left to stand for another 16 hours.
Next, under ice cooling, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 mL of γ-butyrolactone was added to the reaction mixture over a period of 40 minutes while stirring, and then a suspension of 98.6 g of 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB) suspended in 350 mL of γ-butyrolactone was added over a period of 60 minutes while stirring. After further stirring at room temperature for 2 hours, 30 mL of ethyl alcohol was added and stirred for 1 hour, and then 400 mL of γ-butyrolactone was added. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction liquid.
The reaction solution obtained was added to 3 L of ethyl alcohol to produce a precipitate consisting of a crude resin. The produced crude resin was filtered and dissolved in 1.5 L of tetrahydrofuran to obtain a crude resin solution. The crude resin solution obtained was dropped into 28 L of water to precipitate the resin, and the resulting precipitate was filtered and then dried in vacuum to obtain powdered resin A-1. It was confirmed by ¹ H-NMR that the structure of resin A-1 was the structure represented by the above formula (A-5). The subscripts in parentheses represent the content ratio (mol %) of the repeating unit. However, in the structure represented by formula (A-5), the imidizable portion is imidized according to the above-mentioned imidization rate. These are the same in the following resins A-5 to A-9.
The weight average molecular weight (Mw) and imidization rate (%) of Resin A-5 are shown in the above table.

<Synthesis Example 2>
[Synthesis of polyimide (resin A-10)]
30.0g (57.6mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, 5.61g (25.9mmol) of 4,4'-diamino-3,3'-dihydroxybiphenyl, 5.51g (25.9mmol) of 4,4'-diamino-2,2'-dimethylbiphenyl, and 1.26g (11.53mmol) of 4-aminophenol were dissolved in 125ml of NMP and stirred for 3 hours at 200°C under a nitrogen atmosphere to obtain a polyimide. Then, 0.1g of TEMPO and 14.76g (95.1mmol) of MOI (2-isocyanatoethyl methacrylate) were added at room temperature, and the mixture was heated to 60°C, after which 0.1g of Neostan U-600 (Nitto Kasei Co., Ltd., inorganic bismuth) was added and stirred for 3 hours. 375 ml of THF was added to the obtained polyimide solution, and the mixture was dropped into 1500 ml of methanol to precipitate the polymer. The polymer collected by filtration was dried at 40° C. for 1 day under reduced pressure to obtain polyimide (A-10) as a powder. ¹ H-NMR confirmed that the structure of resin A-10 was the structure represented by the above formula (A-10). The weight average molecular weight (Mw) and imidization rate (%) of resin A-10 are also shown in the above table. In the above structure, the subscripts of the repeating units represent the molar ratio of each repeating unit, b and d form a repeating unit with a or c, and a and c form a repeating unit with b or d or are bonded to e.

[Photoradical polymerization initiator]
B-1: Compound having the following structure (Irgacure OXE01, manufactured by BASF)
B-2: Compound having the following structure

[Photoacid generator]
C-1: Ester of 2,2',3,3'-tetrahydro-3,3,3',3'-tetramethyl-1,1'-spirobi(1H-indene)-5,5',6,6',7,7'hexanol and 1,2-naphthoquinone-(2)-diazo-5-sulfonic acid C-2 and C-3: Compounds having the following structure

[Polymerizable compound]
D-1: DPHA (dipentaerythritol hexaacrylate)
D-2: SR209 (manufactured by Sartomer Corporation), a compound having the following structure

D-3: Compound having the following structure

D-4: Compound having the following structure (OXT-121 (XDO), manufactured by Toagosei Co., Ltd.)

D-5: a compound having the following structure

D-6: Polyethylene glycol dimethacrylate (n = approx. 4) (Tokyo Chemical Industry Co., Ltd.)

[Thermal Base Generator]
E-1: Compound having the following structure

E-2: Compound having the following structure

〔Silane coupling agent〕
F-1, F-2: Compounds having the following structures

F-3: N-[3-(triethoxysilyl)propyl]phthalamic acid

[Polymerization inhibitor]
G-1: Compound having the following structure

G-2: 4-hydroxy-TEMPO free radical (Tokyo Chemical Industry Co., Ltd.)
G-3: Compound having the following structure

[Migration Inhibitor]
H-1: Compound having the following structure

H-2: 8-azaadenine

[Metal Complexes]
I-1: Compound having the following structure I-2: Orgatix TC-750 (manufactured by Matsumoto Fine Chemical Co., Ltd.)

〔solvent〕
GBL: γ-butyrolactone PGMEA: propylene glycol monomethyl ether acetate DMSO: dimethyl sulfoxide 2-heptanone NMP: N-methylpyrrolidone

[Other additives]
M-1: N-phenyldiethanolamine (Tokyo Chemical Industry Co., Ltd.)
M-2: The following compound

[Measurement of i-line transmittance]
Each composition was applied to a quartz substrate and heated at 100° C. for 5 minutes to form a film having a thickness of 3 μm.
The i-line transmittance of the above film was measured using a spectrophotometer.
The measurement results are shown in the column "i-line transmittance (%) at 3 μm" in the table.

<Example>
[Step A: Drawing of insulating pattern]
In each of the Examples and Comparative Examples, a resin composition produced according to the formulation described in the "Composition" column of the table was applied onto a silicon wafer by the method described in the "Application Method" column of the table, and dried at 100°C for 5 minutes to form a uniform resin composition layer having a thickness of 2.5 µm on the silicon wafer.
The resin composition layer on the silicon wafer was exposed using an i-line stepper (Canon: FPR-3000i5) at the exposure amount shown in the "i-line exposure amount (mJ/cm ² )" column of the table, and at the focus position shown in the "Focus (μm)" column of the table (the surface of the resin composition layer opposite the silicon wafer is set to 0 μm, the inward direction of the resin composition layer is set to +, and the outward direction of the resin composition is set to -) through a mask formed with a 1:1 line and space having a line width of 0.5 to 3.0 μm and spaced at 0.05 μm intervals. Furthermore, in some examples shown in the "PEB (°C/min)" column of the table, the layer was heated as a PEB (Post Exposure Bake) at the temperature and time shown in the "PEB (°C/min)" column of the table.
Thereafter, the resist pattern was developed using the developer shown in the "Developer" column of the table for the time shown in the "Development Time (s)" column of the table, and then rinsed for 30 seconds with the rinse solution shown in the "Rinsing Solution" column of the table, to obtain a precursor pattern of an insulating pattern.
Further, heating was performed at the temperature, for the time and by the heating method described in the "Heating conditions" column of "Step A" in the table, to obtain an insulating pattern having the thickness described in the "Insulating pattern thickness" column in the table.

[Process B: Wiring Process]
In each of the Examples and Comparative Examples, a Ti layer having a thickness as shown in the "Ti/Cu (nm)" column of the table was formed by sputtering as a conductive layer in the regions between the insulating patterns formed above and on the insulating patterns, and a Cu layer having a thickness as shown in the "Ti/Cu (nm)" column was formed by plating on the Ti layer. Then, a Cu layer (conductive layer) having a thickness as shown in the "Plating Cu (nm)" column of the table was formed by plating on the Cu layer.

[Step C: Plating CMP]
In each of the examples and comparative examples, the conductive layer formed in step B was polished using a CMP (Chemical Mechanical Polishing) machine manufactured by Fujikoshi Machinery Co., Ltd., using the slurry shown in the "Slurry used" column of "Step C" in the table, for the time and pressure shown in the "Polishing time (min.)" and "Polishing pressure (psi)" columns of "Step C" in the table, thereby exposing the insulating pattern on the surface, the Ti layer formed as a seed layer, and the conductive pattern formed in the region between the insulating patterns.
As used herein, 1 psi is 6.895 kPa.

[Step D: Barrier Metal CMP]
Following step C, a CMP (Chemical Mechanical Polishing) tool manufactured by Fujikoshi Machinery Co., Ltd. was used to polish the surface using the slurry shown in the "Slurry used" column for "Step D" in the table for the time shown in the "Polishing time (min.)" column for "Step D" in the table, until the second insulating pattern and the conductive pattern were exposed and flat on the surface.

[Step E: Post-polishing cure]
In one example described in the "Heating conditions" column of "Step E" in the table, after the barrier metal layer was polished in step D, heating was performed under the conditions described in the "Heating conditions for step E" column in the table.

[Step F: Formation of Surface Barrier Metal]
In one example shown in the "Process F" column of the table, after heating in process E, or after polishing the barrier metal layer in process D if heating was not performed in process E, a barrier metal layer having a thickness shown in the "Thickness" column of "Process F" in the table was formed on the surface of the conductive pattern using the material shown in the "Material type" column of "Process F" in the table.

The details of the developer, rinse solution, slurry and heating conditions shown in the table are as follows.
In the table, a "-" indicates that the corresponding treatment was not performed.

[Developer]
CP: Cyclopentanone 2.38% TMAHaq.: 2.38% by mass aqueous solution of tetramethylammonium hydroxide

[Rinse solution]
PGMEA: Propylene glycol monomethyl ether acetate DI water: Deionized water

〔slurry〕
Silica: NP6220 (manufactured by Nitta DuPont)
S-1 to S-4: Slurries listed in the table below

[Heating conditions]
"In N ₂ ": under nitrogen atmosphere using a CLH-21 (Koyo) oven; "On HP": on a hot plate

[Measurement of pattern shape]
- Measurement of resin pattern thickness difference -
In each example and comparative example, a portion of a predetermined wiring width was cut off, and the cross section was polished using a milling device ArBlade5000 (manufactured by Hitachi, Ltd.), and then an SEM image was obtained using an FE-SEM SU-4800 (manufactured by Hitachi, Ltd.), and the difference between the maximum and minimum values of the distance from the substrate surface to the surface of the conductive pattern on the opposite side to the substrate in the direction perpendicular to the substrate surface (resin pattern thickness difference) was measured. The measurement results are shown in the column "resin pattern thickness difference (nm)".

- Pattern angle measurement -
In each example and comparative example, a portion of a predetermined wiring width was cut off, and the cross section was polished using a milling device ArBlade5000 (manufactured by Hitachi, Ltd.), and then an SEM image was obtained using an FE-SEM SU-4800 (manufactured by Hitachi, Ltd.) to measure the angle (pattern angle) between the bottom surface of the conductive pattern and the side surface of the conductive pattern. The measurement results are shown in the "Pattern angle (°)" column.

- Resolution measurement -
In each of the examples and comparative examples, the minimum line width at which an opening could be formed without scumming or collapsing all the way to the substrate surface was evaluated as the resolution. The evaluation results are shown in the "Resolution (μm)" column in the table.

-Measurement of indentation elastic modulus-
In each of the examples and comparative examples, the indentation elastic modulus of the insulating pattern was measured using a Bergovich indenter of a Nano Tribo Indenter TI-950 (manufactured by Bruker) under the conditions of room temperature, 100 μN/10 sec., and creep of 5 sec. The measurement results are shown in the column "Indentation elastic modulus (GPa)" in the table.

- Measurement of cyclization rate -
In each of the Examples and Comparative Examples, the cyclization rate of the insulating pattern (sample) was measured using an FT-IR device Nicolet ^TM iS20 (manufactured by ThermoFisher Scientific). The measurement results are shown in the "Cyclization rate (%)" column in the table. The cyclization rate was calculated using the following formula.
Cyclization rate [%]={(peak height of sample at 1370 cm ⁻¹ )÷(peak height of sample at 1500 cm ⁻¹ )}÷{(peak height of film cured at 350° C. for 1 hour at 1370 cm ⁻¹ )÷(peak height of film cured at 350° C. for 1 hour at 1500 cm ⁻¹ )}×100

[Evaluation of peeling during polishing]
In accordance with process A, insulating wiring with L/S (line/space) = 5 μm/5 μm was formed on a silicon wafer on which SiO ₂ was vapor-deposited in various examples and comparative examples, and then the substrate on which metal wiring was embedded by process B was polished with Tribolab CMP (manufactured by Bruker) using the above-mentioned silica slurry (NP6220 (manufactured by Nitta DuPont)) at a polishing pressure of 3 psi until the insulating pattern was exposed. Thereafter, the presence or absence of scratches on the polished surface was evaluated using an SEM according to the following evaluation criteria.
A: No scratches were observed. B: Scratches were observed.

[Evaluation of Flatness]
In accordance with process A, insulating wiring with L/S = 5 μm/5 μm was formed in various examples and comparative examples on a silicon wafer on which SiO ₂ was vapor-deposited, and then the substrate on which metal wiring was embedded by process B was polished at a polishing pressure of 3 psi using Tribolab CMP (manufactured by Bruker) with the above-described silica slurry (NP6220 (manufactured by Nitta DuPont)) until the insulating pattern was exposed. Thereafter, the arithmetic mean (Sa) of the surface roughness was calculated using a color 3D laser microscope VK-9710 (manufactured by KEYENCE), and evaluated using the following evaluation criteria.
A: Sa was 50 nm or less, B: Sa was more than 50 nm

[Evaluation of Adhesion]
In accordance with step A, insulating wiring of L/S = 5 μm/5 μm was formed in various examples and comparative examples on a silicon wafer on which SiO ₂ was vapor-deposited, and then the substrate on which metal wiring was embedded by step B was polished using Tribolab CMP (manufactured by Bruker) with the above-mentioned silica slurry (NP6220 (manufactured by Nitta DuPont)) at a polishing pressure of 3 psi until the insulating pattern was exposed. Thereafter, the composition of each example and comparative example was applied again to the polished surface, and after soft baking (100 ° C for 5 minutes), exposure (conditions listed in the table), and PEB (conditions listed in the table), it was cured at 200 ° C for 1 hour to obtain a sample. The substrate was cut using a cutter knife and a 1 mm wide cutter guide to create 100 squares of 1 mm ² . Thereafter, using a pressure cooker device HAST EHS-431M (manufactured by Espec Corp.), the substrate was exposed to 121°C and 100% relative humidity for 50 hours, after which an 18 mm cross-cut test/checkerboard test compliant tape (manufactured by Nichiban Corp.) was affixed to the surface and peeled off at 90°, and the remaining squares were counted and evaluated according to the following criteria.
A: 90 or more squares remained. B: Less than 90 squares remained.

REFERENCE SIGNS LIST 1 Substrate 2 Silicon wafer 4 Insulating pattern 6 Conductive pattern 10 Film 12 Hole pattern 14 First insulating pattern before curing 16 First insulating pattern 20 Film 22 Line and space pattern (space portion)
24 Second insulating pattern before curing 26 Second insulating pattern 42 Seed layer 44 Conductive layer 46 Conductive pattern 100 Substrate 102 Insulating pattern 103 Area between insulating patterns 104 Seed layer 105 Conductive layer 106 Conductive pattern

Claims (16)

A substrate;
an insulating pattern disposed on the substrate;
A member having a conductive pattern present between the insulating patterns,
a difference between a maximum value and a minimum value of a distance from the surface of the substrate to a surface of the conductive pattern on the opposite side to the substrate in a direction perpendicular to the substrate surface is 500 nm or less;
A component, wherein an angle between a bottom surface of the conductive pattern and a side surface of the conductive pattern is greater than 90° and is equal to or smaller than 110°. The component according to claim 1, wherein the conductive pattern is a line and space pattern, and the line width of the conductive pattern is 0.1 μm or more and 10 μm or less. The member according to claim 1 or 2, wherein the indentation elastic modulus of the insulating pattern is 6.0 GPa or less. The component according to claim 1 or 2, wherein the insulating pattern comprises polyimide. The member according to claim 4, wherein the cyclization rate of the polyimide is 70% or more. The member according to claim 1 or 2, wherein the insulating pattern includes an ionic compound. A member comprising a substrate, a first insulating pattern present on the substrate, a second insulating pattern present on at least a portion of a surface of the first insulating pattern, and a conductive pattern that electrically connects an area between the first insulating pattern and an area between the second insulating pattern,
a difference between a maximum value and a minimum value of a distance from the surface of the substrate to a surface of the conductive pattern on the opposite side to the substrate in a direction perpendicular to the substrate surface of the member is 500 nm or less;
A component in which the angle between a bottom surface of the conductive pattern and a side surface of the conductive pattern in a region between the second insulating patterns is greater than 90° and is 110° or less. A substrate;
an insulating pattern disposed on the substrate;
A method for producing a member having a conductive pattern present between the insulating patterns, comprising the steps of:
a conductive layer forming step of forming a conductive layer on the insulating pattern and in the regions between the insulating patterns of the base material on which the insulating patterns are formed, to obtain a member A; and
a polishing step of polishing the member A to obtain a member having the conductive pattern and the insulating pattern exposed on a surface thereof;
The angle between the bottom surface of the conductive pattern of the member and the side surface of the conductive pattern is greater than 90° and is equal to or smaller than 110°.
Manufacturing method of components. Before the conductive layer forming step,
A film forming step including applying a composition for forming an insulating pattern onto the substrate to form a film,
The method for producing a member according to claim 8 , wherein the composition for forming an insulating pattern contains at least one compound selected from the group consisting of a photoradical generator and a photoacid generator. The method for manufacturing a member according to claim 9, wherein the insulating pattern forming composition is heated at 100°C for 3 minutes to form a film having a thickness of 3 μm, and the i-line transmittance of the film is 5% or more. The method includes, after the film-forming step, a drying step of drying the film, an exposure step of exposing the dried film to light, and a development step of developing the exposed film with a developer,
10. The method for producing a member according to claim 9, wherein the composition for forming an insulating pattern is applied to a silicon wafer, heated at 100° C. for 180 seconds, irradiated with i-rays at an exposure dose of 100 mJ/cm ² , and heated at 110° C. for 3 minutes, resulting in a film having a swelling ratio in the developer of 15% by volume or less. The method for manufacturing the member according to claim 9, further comprising a heating step of heating the film at two or more heating temperatures after the film forming step. A method for manufacturing a member comprising: a substrate; a first insulating pattern present on the substrate; a second insulating pattern present on at least a portion of a surface of the first insulating pattern; and a conductive pattern that electrically connects an area between the first insulating pattern and an area between the second insulating pattern, the method comprising the steps of:
The method includes steps A to C,
a bottom surface of the conductive pattern of the component and a side surface of the conductive pattern form an angle greater than 90° and not greater than 110°.
Step A: a preparation step of preparing a member A including the first insulating pattern and the second insulating pattern; Step B: a conductive layer formation step of forming a conductive layer in the region between the first insulating patterns of the member A, the region between the second insulating patterns, and on the second insulating pattern to obtain a member B; Step C: a polishing step of polishing the member B to obtain a member in which the conductive patterns and the second insulating pattern are exposed. A photosensitive resin composition used to form the insulating pattern in the manufacturing method according to any one of claims 8 to 12. The photosensitive resin composition according to claim 14, comprising a polyimide or a polyimide precursor. A semiconductor component comprising the component described in claim 1, 2 or 7.