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WO2022261904A1 - 一种显示面板及其制作方法、显示装置 - Google Patents

一种显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2022261904A1
WO2022261904A1 PCT/CN2021/100704 CN2021100704W WO2022261904A1 WO 2022261904 A1 WO2022261904 A1 WO 2022261904A1 CN 2021100704 W CN2021100704 W CN 2021100704W WO 2022261904 A1 WO2022261904 A1 WO 2022261904A1
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WIPO (PCT)
Prior art keywords
pixel
layer
light
driving substrate
display panel
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PCT/CN2021/100704
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English (en)
French (fr)
Inventor
孙倩
靳倩
田禹
李杨
卢天豪
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US18/565,256 priority Critical patent/US20240268159A1/en
Priority to CN202180001543.3A priority patent/CN115868037A/zh
Priority to PCT/CN2021/100704 priority patent/WO2022261904A1/zh
Publication of WO2022261904A1 publication Critical patent/WO2022261904A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel, a manufacturing method thereof, and a display device.
  • the QD-OLED (Quantum dot-Organic Light Emitting Display) panel is an emerging display technology. Its working principle is the combination of quantum dot conversion film and OLED. Under the framework of the original OLED screen, an additional layer of quantum Dot conversion film, quantum dot conversion film converts the wavelength of the light emitted by OLED.
  • a display panel provided by an embodiment of the present disclosure including:
  • a pixel defining layer located on one side of the driving substrate, the pixel defining layer comprising a plurality of first pixel spacers distributed in an array, adjacent to the first pixel spacers to form a plurality of first pixel regions;
  • a first encapsulation layer covering the pixel defining layer and the plurality of light emitting devices
  • a transparent heat insulating layer located on the side of the first encapsulation layer away from the driving substrate, the orthographic projection of the transparent heat insulating layer on the driving substrate at least covers the first pixel area on the driving substrate orthographic projection of
  • the pixel isolation structure is located on the side of the transparent heat insulation layer away from the driving substrate, the pixel isolation structure includes a plurality of second pixel separators distributed in an array, and adjacent to the second pixel separators are surrounded to form multiple pixel separators. a second pixel area, the second pixel area is set corresponding to the first pixel area;
  • the color conversion layer includes a plurality of color conversion parts, and the plurality of color conversion parts are arranged in the corresponding second pixel area.
  • the transparent heat insulation layer has a plurality of hollowed out parts and a plurality of heat insulation parts, and the orthographic projection of the heat insulation parts on the driving substrate covers all Orthographic projection of the first pixel region on the driving substrate.
  • the above-mentioned display panel provided by the embodiments of the present disclosure further includes a first light-shielding layer, the first light-shielding layer includes a light-shielding portion filling the hollow portion, and the pixel isolation structure is on the driving substrate
  • the orthographic projection of is covering the orthographic projection of the light shielding portion on the driving substrate.
  • the material of the first light shielding layer is a positive photoresist
  • the material of the transparent heat insulating layer is a negative photoresist with heat insulating properties.
  • the material of the transparent heat insulating layer includes a negative photoresist body and a phase change material mixed in the negative photoresist body.
  • the cross-sectional shape of the light-shielding portion is approximately a positive trapezoid
  • the cross-sectional shape of the heat insulating portion is approximately an inverted trapezoid
  • the phase change material is an organic phase change material
  • the organic phase change material includes paraffin, higher fatty acids, polyolefins or alcohols.
  • the thicknesses of the first light-shielding layer and the transparent heat-insulating layer are both 2 ⁇ m ⁇ 3 ⁇ m.
  • the thickness of the pixel isolation structure is 2-5 times the thickness of the transparent heat insulating layer.
  • the color of the pixel isolation structure is one of black, yellow or gray.
  • inorganic nanoparticles are provided in the pixel isolation structure, and the inorganic nanoparticles are used to scatter light incident to the sidewall of the pixel isolation structure.
  • the material of the pixel isolation structure is the same as that of the light shielding portion, and the pixel isolation structure and the light shielding portion are integrally structured.
  • the above-mentioned display panel provided by the embodiments of the present disclosure further includes: a second encapsulation layer covering the color conversion layer and the pixel isolation structure, located at a position where the second encapsulation layer is away from the driving substrate.
  • an embodiment of the present disclosure further provides a display device, including the display panel described in any one of the above.
  • a cover plate covering the display panel is further included.
  • an embodiment of the present disclosure also provides a method for manufacturing the display panel described in any one of the above, including:
  • a pixel defining layer is formed on the driving substrate; the pixel defining layer includes a plurality of first pixel spacers distributed in an array, and a plurality of first pixel regions are formed adjacent to the first pixel spacers;
  • a transparent heat insulating layer is formed on the side of the first encapsulation layer away from the driving substrate; wherein, the orthographic projection of the transparent heat insulating layer on the driving substrate at least covers the first pixel area on the driving substrate orthographic projection on
  • a pixel isolation structure is formed on the side of the transparent heat insulation layer away from the driving substrate; wherein, the pixel isolation structure includes a plurality of second pixel separators distributed in an array, and adjacent to the second pixel separators are surrounded by forming a plurality of second pixel regions, the second pixel regions are set correspondingly to the first pixel regions;
  • a corresponding color converting portion is formed in the second pixel area.
  • a pixel isolation structure is formed on the side of the transparent heat insulating layer away from the driving substrate, specifically:
  • the pixel isolation material film layer is heated and cured for the first time on the side of the pixel isolation material film layer away from the transparent heat insulating layer to form the pixel isolation structure.
  • before forming the pixel isolation structure further include:
  • the first light-shielding material is heated and cured a second time on the side of the first light-shielding material film layer away from the transparent heat-insulating layer to form the light-shielding portion.
  • the same mask is used to form the transparent heat-insulating layer and the first light-shielding layer.
  • the temperature of the first heating and curing is higher than the temperature of the second heating and curing.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of another display panel provided by an embodiment of the present disclosure.
  • FIG. 3 is a schematic structural diagram of another display panel provided by an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of another display panel provided by an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of another display panel provided by an embodiment of the present disclosure.
  • FIG. 6A is a schematic diagram of an enlarged structure of a light-shielding portion in a display panel provided by an embodiment of the present disclosure
  • FIG. 6B is an enlarged structural schematic diagram of a heat insulation part in a display panel provided by an embodiment of the present disclosure
  • FIG. 6C is an enlarged structural schematic diagram of a second pixel separator in a display panel provided by an embodiment of the present disclosure
  • FIG. 7 is a schematic structural diagram of another display panel provided by an embodiment of the present disclosure.
  • FIG. 8 is a schematic top view of a first pixel region
  • FIG. 9 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present disclosure.
  • FIG. 10 is a schematic flowchart of another method for manufacturing a display panel provided by an embodiment of the present disclosure.
  • FIG. 11 is a schematic flowchart of another method for manufacturing a display panel provided by an embodiment of the present disclosure.
  • 12A-12K are structural schematic diagrams of a method for manufacturing a display panel provided by an embodiment of the present disclosure after each manufacturing step is performed;
  • FIG. 13 is a schematic structural diagram of a display device provided by an embodiment of the present disclosure.
  • FIG. 14 is a schematic structural diagram of another display device provided by an embodiment of the present disclosure.
  • FIG. 15 is a schematic structural diagram of another display device provided by an embodiment of the present disclosure.
  • FIG. 16 is a schematic structural diagram of another display device provided by an embodiment of the present disclosure.
  • FIG. 17 is a schematic structural diagram of another display device provided by an embodiment of the present disclosure.
  • the QD-OLED device structure can be divided into two types, one is the box type, that is, the blue OLED and the QD conversion layer are prepared on two substrates respectively, and then formed in a box way, generally the box type device structure is filled with fillers, etc. Layers lead to a thicker box, and problems such as cross-color are prone to occur.
  • Another QD-OLED structure is a color filter on encapsulation (Color Filter on Encap, referred to as COE) technology, that is, a filter is packaged on the light-emitting side of the OLED display panel, because the filter can play a role in reducing light.
  • COE color filter on encapsulation
  • Filtering function so it can also reduce the amount of ambient light entering the OLED display panel and reflected from the light-emitting side after being reflected by the internal structure of the OLED display panel.
  • This kind of structure has a smaller thickness and a higher color gamut.
  • filters of various colors need to be defined by the pixel isolation structure (Bank), that is, Banks need to be prepared on the OLED.
  • the material of the Bank is generally resin, and the curing temperature of the resin is generally above 180°C.
  • TFT thin film transistor
  • an embodiment of the present disclosure provides a display panel, as shown in FIGS. 1-5 , including:
  • the pixel defining layer 2 is located on one side of the driving substrate 1.
  • the pixel defining layer 2 includes a plurality of first pixel spacers 21 distributed in an array, and adjacent first pixel spacers 21 are surrounded to form a plurality of first pixel regions A1;
  • a plurality of light emitting devices 3 are located in the corresponding first pixel area A1;
  • the first encapsulation layer 4 covers the pixel defining layer 2 and the plurality of light emitting devices 3;
  • the transparent heat insulating layer 5 is located on the side of the first encapsulation layer 4 facing away from the driving substrate 1, and the orthographic projection of the transparent heat insulating layer 5 on the driving substrate 1 at least covers the orthographic projection of the first pixel area A1 on the driving substrate 1;
  • the pixel isolation structure 6 is located on the side of the transparent heat insulating layer 5 facing away from the driving substrate 1.
  • the pixel isolation structure 6 includes a plurality of second pixel separators 61 distributed in an array, and adjacent second pixel separators 61 are surrounded to form a plurality of second pixel separators. Two pixel areas A2, the second pixel area A2 is set corresponding to the first pixel area A1;
  • the color conversion layer 7 includes a plurality of color conversion parts (71, 72 and 73), and the plurality of color conversion parts (71, 72 and 73) are arranged in the corresponding second pixel area A2.
  • the transparent heat insulating layer 5 can protect the light emitting device 3 under the first encapsulating layer 4 from High temperature damage, so that when the pixel isolation structure 6 is subsequently formed, a high temperature curing process can be used to ensure that the material of the pixel isolation structure 6 is completely cured, and to prevent the problem of color crossover in the color conversion layer 7 caused by incomplete curing of the pixel isolation structure 6 .
  • the device 3 avoids high temperature damage and improves luminous performance.
  • the light-emitting device since the light-emitting device emits light at a certain angle, for example, the light-emitting angle is 120°C, the light reflected by the light-emitting device not only enters the corresponding color conversion part above it, but also enters the color conversion part adjacent to it. , so the problem of cross-color is prone to occur.
  • the orthographic projection of the insulating portion 51 on the driving substrate 1 covers the orthographic projection of the first pixel region A1 on the driving substrate 1 . In this way, the heat insulating part 51 can protect the light-emitting device 3 below from being damaged by high temperature, and a light shielding part can be provided in the hollow part to prevent the problem of cross-color.
  • the orthographic projection of the structure 6 on the driving substrate 1 covers the orthographic projection of the light shielding portion 81 on the driving substrate 1 .
  • the light-shielding portion 81 filled in the hollow portion of the transparent heat-insulating layer 5 can prevent cross-color occurrence of adjacent pixels.
  • the heat insulating part 51 is prepared before the light shielding part 81, and because the light shielding part 81 needs to be baked at a high temperature to complete curing, it is necessary to prepare the heat insulating part 51 first to protect the light-emitting device 3, and then prepare the light shielding part 81 and then turn it over. curing to reduce thermal damage to the underlying light-emitting device.
  • the thickness of the light shielding portion 81 may be the same as that of the heat insulating portion 51 .
  • photoresist is generally divided into positive photoresist and negative photoresist.
  • the shape of positive photoresist after exposure and development is approximately a positive trapezoid
  • the shape of negative photoresist after exposure and development is It is approximately an inverted trapezoid.
  • the light-shielding portion 81 is a positive trapezoid, so at this time the light-shielding portion 81 is preferably formed by exposure and development of a positive photoresist, and The heat insulating portion 51 is formed by exposing and developing a negative photoresist.
  • the negative photoresist with heat insulation performance has specific heat insulation performance, so that the light emitting device 3 can be protected from high temperature damage; or, the material of the transparent heat insulation layer 5 includes the negative photoresist body and The phase change material mixed in the negative photoresist body, the phase change material absorbs heat when heated, and transforms from one form to another to realize heat absorption, which can solve the pixel isolation provided by the embodiment of the present disclosure
  • the low-temperature curing problem of the structure 6 and the light-shielding portion 81 is poor, and in the subsequent use of the device, it can also absorb the heat generated by the light-emitting device 3 .
  • the heat-insulating portion 51 is formed by exposing and developing a negative-tone photoresist, that is, the light-shielding portion 81 and the heat-insulating portion 51 adopt The photoresist with the opposite lithographic performance is prepared, so the light shielding part 81 and the heat insulating part 51 can be directly prepared by using the same mask, which saves a mask and thus saves cost.
  • the light shielding portion 81 may also be formed by exposing and developing a negative photoresist, and the heat insulating portion 51 may be formed by exposing and developing a positive photoresist.
  • the phase change material may be an organic phase change material, which may include but not limited to paraffin, higher fatty acids, polyolefins or alcohols.
  • the cross-sectional shape of the light-shielding portion 81 is approximately a positive trapezoid, that is, the angle ⁇ 1 between the side tangent a and the bottom b tangent in the cross-section of the light-shielding portion 81 is less than 90 degrees, As shown in FIG.
  • the cross-sectional shape of the heat insulating portion 51 is roughly an inverted trapezoid, that is, the angle ⁇ 2 between the side c tangent and the bottom d tangent in the cross section of the heat insulating portion 51 is greater than 90 degrees, as shown in FIG. 6B . In this way, the light emitting angle of the light emitting device 3 can be increased.
  • the light transmittance is greater than 97%.
  • the included angle ⁇ 3 between the side c tangent and the bottom d tangent in the section of the heat insulating part 51 can be 90°-110°, as shown in FIG. 6B ;
  • the light-shielding portion 81 has an absorbance of more than 95% for visible light (380nm-780nm).
  • the thicknesses of the first light-shielding layer 8 and the transparent heat-insulating layer 5 are both 2 ⁇ m ⁇ 3 ⁇ m.
  • the thickness of the pixel isolation structure 6 is 2-5 times the thickness of the transparent heat insulating layer 5 .
  • the smaller the relationship between the thickness multiples the greater the distance between the color conversion part and the light-emitting device, resulting in cross-color; the larger the relationship between the thickness multiples, the failure of the transparent heat insulation layer 5 to achieve the heat insulation effect, and damage the light emission. device performance.
  • the color of the pixel isolation structure can be one of black, yellow or gray
  • the thickness of the pixel isolation structure can be 7 ⁇ m to 10 ⁇ m, preferably 9 ⁇ m to 10 ⁇ m.
  • the absorbance of light in the visible light band (380nm-780nm) is greater than 95%.
  • the ability of the black pixel isolation structure to absorb light is stronger than that of the yellow and gray pixel isolation structures.
  • the color of the pixel isolation structure can be set to black, which can be selected according to actual needs. For example, as shown in FIG. 2 , the color of the pixel isolation structure 6 is black; as shown in FIGS. 3 and 5 , the color of the pixel isolation structure 6 is yellow; as shown in FIG. 4 , the color of the pixel isolation structure 6 is gray.
  • the included angle ⁇ 3 between the side e tangent and the bottom f tangent in the cross section of the second pixel separator 61 may be 60° to 85°. °, as shown in Figure 6C.
  • the pixel isolation structure 6 may also have inorganic nanoparticles.
  • the inorganic nanoparticles Taking the gray pixel isolation structure 6 shown in FIG. 4 as an example with inorganic nanoparticles 601, the inorganic nanoparticles The particles 601 generally have a scattering effect, and the inorganic nanoparticles 601 are used to scatter the light incident on the sidewall of the pixel isolation structure 6 . Therefore, the use of the pixel isolation structure 6 doped with inorganic nanoparticles can improve the light utilization efficiency of the color conversion layer and improve the display effect.
  • the inorganic nanoparticles 601 may include one or a combination of TiO 2 and SiO 2 .
  • the inorganic nanoparticles can also be other materials with scattering effect, which will not be listed here.
  • Fig. 2-Fig. Point color film 72 and scattering particle film 73 . Since the three primary colors of red, green and blue are used to emit light, and the light-emitting device 3 is a blue light-emitting device, there is no need to install a blue quantum dot color film at the corresponding position of the blue quantum dot color film, and it is sufficient to fill the scattering particles, which can improve the The role of light angle.
  • the above display panel provided by the embodiment of the present disclosure, as shown in FIG. 5 , it also includes a reflective structure 9 covering the pixel isolation structure 6.
  • the material of the reflective structure 9 is metal.
  • the reflective structure 9 can increase the reflectivity of light, which helps to improve the light extraction effect.
  • the reflectivity of the reflective structure 9 for visible light (380nm-780nm) is preferably 50-70%.
  • the material of the reflective structure may be but not limited to silver or aluminum and alloys, and the thickness of the reflective structure 9 is 200nm-400nm.
  • the reflective structure 9 is only provided when the color of the pixel isolation structure 6 is yellow.
  • the reflective structure 9 may also be provided when the color of the pixel isolation structure 6 is black or gray.
  • the isolation structure 6 and the light shielding portion 81 may be integrally structured.
  • the pixel isolation structure 6 and the light-shielding portion 81 can be formed by one patterning process without adding a separate process for preparing the pixel isolation structure 6, which can simplify the manufacturing process, save production costs, and improve production efficiency.
  • the display panel when the OLED display panel is in the off-screen state, in order to improve product quality and market competitiveness, it is necessary for the display panel to have a darker viewing area when viewed from the outside.
  • the blue light in the light will excite the quantum dot color film to emit light. Therefore, in the above-mentioned display panel provided by the embodiment of the present disclosure, as shown in FIGS.
  • the second encapsulation layer 10 a plurality of color filters (101, 102, 103) located on the side of the second encapsulation layer 10 facing away from the driving substrate 1 and corresponding to the color conversion portions (71, 72, 73), and a plurality of color filters (101, 102, 103) located on each filter
  • a red color filter 101 is set at a position corresponding to the red quantum dot color film 71
  • a green color filter 102 is set at a position corresponding to the green quantum dot color film 72
  • a blue color filter 102 is set at a position corresponding to the scattering particle film 73.
  • the color filter part 103 is used to block the blue light in the external ambient light when the screen is off, so as to improve product performance.
  • the material of the second encapsulation layer 10 may include SiOx, SiNx or Al2O3, etc.
  • the thickness of the second encapsulation layer 10 is less than 1 ⁇ m, preferably less than 0.5 ⁇ m
  • the refractive index of layer 10 ranges between 1.7 and 2.0, preferably between 1.75 and 1.85.
  • the thicknesses of the color filters ( 101 , 102 , 103 ) and the second light-shielding layer 20 are less than 3 um.
  • the light-emitting device includes a cathode, and the external light will reflect the light back when it passes through the cathode (usually metal), and we will see our from the screen, which will affect the viewing effect and contrast.
  • the above display panel as shown in FIGS. 1-5 and 7 , further includes: a polarizer 30 located on the side of the plurality of color filters (101, 102, 103) away from the driving substrate 1 .
  • the polarizer 30 is a reflective polarizer, preferably a reflective polarizer with slightly higher reflectivity in the blue light band.
  • the driving substrate 1 may be an oxide thin film transistor (Oxide TFT) substrate or a low temperature polysilicon thin film transistor (LTPS TFT) substrate.
  • the driving substrate 1 includes a base substrate 11 and a thin film transistor 12 located on the base substrate 11 .
  • the material of the base substrate 11 may be rigid glass or plastic.
  • the light-emitting device 3 includes a reflective anode 31 , a light-emitting layer 32 and a cathode (not shown), which are sequentially stacked in the first pixel area A1 , and the cathode is generally arranged on the entire surface.
  • the first encapsulation layer 4 can adopt thin-film encapsulation (Thin-Film Encapsulation, TFE), and the first encapsulation layer 4 can comprise three-layer lamination structure, the first layer It is an inorganic layer (SiN or SiON layer), the second layer is an organic layer (IJP), and the third layer is an inorganic layer (SiN or SiON layer).
  • the light-emitting device can emit light from above (that is, a top-emitting device), the center wavelength range is 420nm-470nm, and the half-peak width is 10nm-30nm.
  • the first encapsulation layer 4 has high transparency (for example, transmittance > 90%, preferably ⁇ 95%), and the thickness is less than 10um (80-120ppi).
  • the pixel defining layer 2 in Figure 1- Figure 5 and Figure 7 defines a plurality of first pixel areas A1, wherein the first pixel area A1 corresponding to the green quantum dot color film 72
  • an embodiment of the present disclosure also provides a method for manufacturing the above-mentioned display panel, as shown in FIG. 9 , including:
  • the pixel defining layer includes a plurality of first pixel spacers distributed in an array, and adjacent first pixel spacers surround and form a plurality of first pixel regions;
  • the pixel isolation structure includes a plurality of second pixel separators distributed in an array, and adjacent second pixel separators surround and form a plurality of second pixels area, the second pixel area is set corresponding to the first pixel area;
  • a transparent heat insulating layer is formed on the side of the first encapsulation layer facing away from the driving substrate, and the transparent heat insulating layer can protect the light-emitting devices under the first encapsulation layer from being damaged by high temperature. Therefore, when the pixel isolation structure is subsequently formed, a high-temperature curing process can be used to ensure that the material of the pixel isolation structure is completely cured, and to prevent the problem of color crossover in the color conversion layer caused by incomplete curing of the pixel isolation structure.
  • a pixel isolation structure is formed on the side of the transparent heat insulating layer away from the driving substrate, as shown in FIG. 10 , which may specifically be:
  • the above manufacturing method provided by the embodiment of the present disclosure as shown in FIG. 11 , it also includes:
  • the same mask is used to form the transparent heat-insulating layer and the first light-shielding layer. This saves a mask, thereby saving costs.
  • the temperature of the first heating and curing and the second heating and curing can be the same or different, depending on the material, the heating temperature and time are mainly related to the
  • the selected light-shielding part is related to the pixel isolation structure material itself.
  • the heating source is far away from the light-emitting device, and during the first heating and curing, the heating source is closer to the light-emitting device, which can appropriately improve the first heating and curing. Therefore, the temperature of the first heating and curing can be higher than the temperature of the second heating and curing, but the specific temperature depends on the degree of curing of the second curing.
  • the pixel defining layer 2 On the driving substrate 1, the pixel defining layer 2, reflective anode 31, light emitting layer 32 and cathode (not shown) are sequentially formed, as shown in FIG. 12B; specifically, the pixel defining layer 2 includes a plurality of The first pixel separator 21 is surrounded by the adjacent first pixel separator 21 to form the first pixel region A1, the reflective anode 31 and the light emitting layer 32 are located in the first pixel region A1, and the entire surface of the cathode covers the pixel defining layer 2 and the light emitting device 3 (reflective anode 31, luminescent layer 32), the fabrication methods of the pixel defining layer 2, reflective anode 31, luminescent layer 32 and cathode are the same as those of the prior art, and will not be described in detail here.
  • the second layer is an organic layer (IJP)
  • the third layer is an inorganic layer (SiN or SiON layer).
  • a transparent heat insulating layer 5 is formed on the side of the first encapsulation layer 4 facing away from the driving substrate 1.
  • the transparent heat insulating layer 5 has a plurality of hollowed-out parts and heat insulating parts 51, as shown in FIG. 12D; specifically, the transparent heat insulating layer
  • the material of 5 can be a negative photoresist with thermal insulation properties or a phase-change material doped in the photoresist, so that a mask can be used to form multiple hollows and spacers in the transparent thermal insulation layer 5 by exposing and developing. Heat section 51 .
  • step (6) Flip the structure in step (5) vertically, and heat and cure the light-shielding part 81 for the second time (as shown by the arrow), the temperature can be ⁇ 180°C, as shown in Figure 12F, and the structure marked 100 in Figure 12F is heating curing equipment.
  • the pixel isolation structure 6 is formed by exposure and development on the side of the cured light-shielding portion 81 away from the driving substrate 1.
  • the material of the pixel isolation structure 6 is resin, and the pixel isolation structure 6 has a second pixel isolation body 61 arranged in an array. A plurality of second pixel regions A2 are formed around adjacent second pixel separators 61 , as shown in FIG. 12G .
  • the temperature can be ⁇ 180°C, as shown in Figure 12H, the structure marked 100 in Figure 12H is Heating and curing equipment; specifically, the temperature of the first heating and curing may be higher than the temperature of the second heating and curing.
  • red quantum dot color film 71, green quantum dot color film 72 and the scattering particle film 73 constitute the color conversion layer 7, as shown in FIG. 12I.
  • step (10) Form a second encapsulation layer 10 above the structure in step (9), as shown in FIG. 12J ; specifically, the material of the second encapsulation layer 10 may include SiOx, SiNx, or Al2O3.
  • step (11) Form a polarizer 13 above the structure in step (11), as shown in FIG. 2 .
  • an embodiment of the present invention further provides a display device, including any one of the above-mentioned display panels provided by the embodiments of the present invention.
  • a cover plate 40 covering the display panel may also be included.
  • the cover 40 may be a rigid cover or a flexible cover.
  • the display device may be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.
  • the other essential components of the display device should be understood by those of ordinary skill in the art, and will not be repeated here, nor should they be regarded as limitations on the present invention.
  • the problem-solving principle of the display device is similar to that of the aforementioned quantum dot light-emitting device, so the implementation of the display device can refer to the implementation of the aforementioned display panel, and repeated descriptions will not be repeated here.
  • a transparent heat-insulating layer is provided on the side of the first encapsulation layer away from the driving substrate, and the transparent heat-insulation layer can protect the light-emitting devices under the first encapsulation layer from
  • a high-temperature curing process can be used to ensure that the material of the pixel isolation structure is completely cured, and to prevent the problem of color crossover in the color conversion layer caused by incomplete curing of the pixel isolation structure.

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Abstract

一种显示面板及其制作方法、显示装置。显示面板包括：驱动基板（1）；像素界定层（2），位于驱动基板（1）的一侧，像素界定层（2）包括多个阵列分布的第一像素分隔体（21），相邻第一像素分隔体（21）围设形成多个第一像素区域（A1）；多个发光器件（3），位于对应的第一像素区域（A1）内；第一封装层（4），覆盖像素界定层（2）和多个发光器件（3）；透明隔热层（5），位于第一封装层（4）背离驱动基板（1）的一侧，透明隔热层（5）在驱动基板（1）上的正投影至少覆盖第一像素区域（A1）在驱动基板（1）上的正投影；像素隔离结构（6），位于透明隔热层（5）背离驱动基板（1）的一侧，像素隔离结构（6）包括多个阵列分布的第二像素分隔体（61），相邻第二像素分隔体（61）围设形成多个第二像素区域（A2），第二像素区域（A2）与第一像素区域（A1）对应设置；色转换层（7），包括多个色转换部(71、72和73)，多个色转换部(71、72和73)设置在对应的第二像素区域（A2）内。

Description

一种显示面板及其制作方法、显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板及其制作方法、显示装置。
背景技术
目前，QD-OLED(Quantum dot-Organic Light Emitting Display)面板是一种新兴的显示技术，其工作原理是量子点转换膜和OLED的结合，在原有的OLED屏幕的构架下，多加了一层量子点转换膜，量子点转换膜将OLED发出的光线进行波长转换。
发明内容
本公开实施例提供的一种显示面板，其中，包括：
驱动基板；
像素界定层，位于所述驱动基板的一侧，所述像素界定层包括多个阵列分布的第一像素分隔体，相邻所述第一像素分隔体围设形成多个第一像素区域；
多个发光器件，位于对应的所述第一像素区域内；
第一封装层，覆盖所述像素界定层和所述多个发光器件；
透明隔热层，位于所述第一封装层背离所述驱动基板的一侧，所述透明隔热层在所述驱动基板上的正投影至少覆盖所述第一像素区域在所述驱动基板上的正投影；
像素隔离结构，位于所述透明隔热层背离所述驱动基板的一侧，所述像素隔离结构包括多个阵列分布的第二像素分隔体，相邻所述第二像素分隔体围设形成多个第二像素区域，所述第二像素区域与所述第一像素区域对应设 置；
色转换层，包括多个色转换部，所述多个色转换部设置在对应的所述第二像素区域内。
可选地，在本公开实施例提供的上述显示面板中，所述透明隔热层具有多个镂空部和多个隔热部，所述隔热部在所述驱动基板上的正投影覆盖所述第一像素区域在所述驱动基板上的正投影。
可选地，在本公开实施例提供的上述显示面板中，还包括第一遮光层，所述第一遮光层包括填充所述镂空部的遮光部，所述像素隔离结构在所述驱动基板上的正投影覆盖所述遮光部在所述驱动基板上的正投影。
可选地，在本公开实施例提供的上述显示面板中，所述第一遮光层的材料为正性光刻胶，所述透明隔热层的材料为具有隔热性能的负性光刻胶，或所述透明隔热层的材料包括负性光刻胶本体以及混合在所述负性光刻胶本体中的相变材料。
可选地，在本公开实施例提供的上述显示面板中，沿所述驱动基板的厚度方向，所述遮光部的截面形状大致为正梯形，所述隔热部的截面形状大致为倒梯形。
可选地，在本公开实施例提供的上述显示面板中，所述相变材料为有机相变材料，所述有机相变材料包括石蜡、高级脂肪酸类、聚烯烃类或醇类。
可选地，在本公开实施例提供的上述显示面板中，所述第一遮光层和所述透明隔热层的厚度均为2μm～3μm。
可选地，在本公开实施例提供的上述显示面板中，所述像素隔离结构的厚度是所述透明隔热层的厚度的2-5倍。
可选地，在本公开实施例提供的上述显示面板中，所述像素隔离结构的颜色为黑色、黄色或灰色其中一种。
可选地，在本公开实施例提供的上述显示面板中，所述像素隔离结构中具有无机纳米粒子，所述无机纳米粒子用于散射入射至所述像素隔离结构侧壁的光。
可选地，在本公开实施例提供的上述显示面板中，所述像素隔离结构的材料与所述遮光部的材料相同，所述像素隔离结构与所述遮光部为一体结构。
可选地，在本公开实施例提供的上述显示面板中，还包括：覆盖所述色转换层和所述像素隔离结构的第二封装层，位于所述第二封装层背离所述驱动基板一侧且与所述色转换部对应的多个滤色部，以及位于各所述滤色部之间的第二遮光层。
相应地，本公开实施例还提供了一种显示装置，包括上述任一项所述的显示面板。
可选地，在本公开实施例提供的上述显示装置中，还包括覆盖所述显示面板的盖板。
相应地，本公开实施例还提供了一种上述任一项所述的显示面板的制作方法，包括：
提供一驱动基板；
在所述驱动基板上形成像素界定层；所述像素界定层包括多个阵列分布的第一像素分隔体，相邻所述第一像素分隔体围设形成多个第一像素区域；
在所述第一像素区域内形成对应的发光器件；
形成覆盖所述像素界定层和所述多个发光器件的第一封装层；
在所述第一封装层背离所述驱动基板一侧形成透明隔热层；其中，所述透明隔热层在所述驱动基板上的正投影至少覆盖所述第一像素区域在所述驱动基板上的正投影；
在所述透明隔热层背离所述驱动基板的一侧形成像素隔离结构；其中，所述像素隔离结构包括多个阵列分布的第二像素分隔体，相邻所述第二像素分隔体围设形成多个第二像素区域，所述第二像素区域与所述第一像素区域对应设置；
在所述第二像素区域内形成对应的色转换部。
可选地，在本公开实施例提供的上述制作方法中，在所述透明隔热层背离所述驱动基板的一侧形成像素隔离结构，具体为：
在所述透明隔热层背离所述驱动基板的一侧沉积像素隔离材料膜层；
对所述像素隔离材料膜层进行曝光显影，形成包括多个阵列分布的第二像素分隔体的像素隔离材料膜层；
在所述像素隔离材料膜层远离所述透明隔热层的一侧对所述像素隔离材料膜层进行第一次加热固化，形成所述像素隔离结构。
可选地，在本公开实施例提供的上述制作方法中，在形成像素隔离结构之前，还包括：
在所述透明隔热层背离所述驱动基板的一侧沉积第一遮光材料膜层；
对所述第一遮光材料膜层进行曝光显影，形成填充所述镂空部的第一遮光材料；
在所述第一遮光材料膜层远离所述透明隔热层的一侧对所述第一遮光材料进行第二次加热固化，形成所述遮光部。
可选地，在本公开实施例提供的上述制作方法中，采用同一掩膜版形成所述透明隔热层和所述第一遮光层。
可选地，在本公开实施例提供的上述制作方法中，所述第一次加热固化的温度大于所述第二次加热固化的温度。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的一种显示面板的结构示意图；
图2为本公开实施例提供的又一种显示面板的结构示意图；
图3为本公开实施例提供的又一种显示面板的结构示意图；
图4为本公开实施例提供的又一种显示面板的结构示意图；
图5为本公开实施例提供的又一种显示面板的结构示意图；
图6A为本公开实施例提供的一种显示面板中遮光部的放大结构示意图；
图6B为本公开实施例提供的一种显示面板中隔热部的放大结构示意图；
图6C为本公开实施例提供的一种显示面板中第二像素分隔体的放大结构示意图；
图7为本公开实施例提供的又一种显示面板的结构示意图；
图8为第一像素区域的俯视示意图；
图9为本公开实施例提供的一种显示面板的制作方法的流程示意图；
图10为本公开实施例提供的又一种显示面板的制作方法的流程示意图；
图11为本公开实施例提供的又一种显示面板的制作方法的流程示意图；
图12A-图12K为本公开实施例提供的一种显示面板的制作方法在执行每一制作步骤之后的结构示意图；
图13为本公开实施例提供的一种显示装置的结构示意图；
图14为本公开实施例提供的又一种显示装置的结构示意图；
图15为本公开实施例提供的又一种显示装置的结构示意图；
图16为本公开实施例提供的又一种显示装置的结构示意图；
图17为本公开实施例提供的又一种显示装置的结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。并且在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互组合。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分 不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。
需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。
QD-OLED器件结构可分为两种，一种为对盒式，即蓝光OLED与QD转换层分别在两个基板上制备，然后以对盒方式形成，一般对盒式器件结构因filler等填充层导致盒厚较厚，并且容易发生串色等问题。另一种QD-OLED结构为一种封装上的彩色滤光片(Color Filter on Encap，简称COE)技术，即在OLED显示面板的出光侧封装滤光片，由于滤光片能够对光线起到过滤作用，因此也可以减少进入OLED显示面板内的环境光被OLED显示面板的内部结构反射后从出光侧的出射量，此种结构盒厚减小，色域较高。COE技术中各种不同颜色的滤光片需要像素隔离结构(Bank)界定，即需要在OLED上制备Bank，Bank的材料一般为树脂，树脂的固化温度一般为180℃以上，高温固化会对下方OLED及薄膜晶体管(TFT)性能产生不利影响，若采用低温85℃固化，则固化不完全，导致QD墨水通过Bank渗透到相邻像素，导致串色。
有鉴于此，本公开实施例提供了一种显示面板，如图1-图5所示，包括：
驱动基板1；
像素界定层2，位于驱动基板1的一侧，像素界定层2包括多个阵列分布的第一像素分隔体21，相邻第一像素分隔体21围设形成多个第一像素区域A1；
多个发光器件3，位于对应的第一像素区域A1内；
第一封装层4，覆盖像素界定层2和多个发光器件3；
透明隔热层5，位于第一封装层4背离驱动基板1的一侧，透明隔热层5 在驱动基板1上的正投影至少覆盖第一像素区域A1在驱动基板1上的正投影；
像素隔离结构6，位于透明隔热层5背离驱动基板1的一侧，像素隔离结构6包括多个阵列分布的第二像素分隔体61，相邻第二像素分隔体61围设形成多个第二像素区域A2，第二像素区域A2与第一像素区域A1对应设置；
色转换层7，包括多个色转换部(71、72和73)，多个色转换部(71、72和73)设置在对应的第二像素区域A2内。
本公开实施例提供的上述显示面板，通过在第一封装层4背离驱动基板1的一侧设置透明隔热层5，透明隔热层5可以保护第一封装层4下方的发光器件3不受高温破坏，从而后续形成像素隔离结构6时，可以采用高温固化工艺，保证像素隔离结构6的材料固化完全，防止因像素隔离结构6固化不完全导致的色转换层7串色的问题。
在具体实施时，在本公开实施例提供的上述显示面板中，如图1所示，透明隔热层5可以为整面设置的结构，整面设置的透明隔热层5可以保护下方的发光器件3避免高温破坏，提高发光性能。
在具体实施时，由于发光器件发光是有一定角度的，例如发光角度为120℃，这样发光器件反射的光不仅入射至其上方对应的色转换部，还会入射至其相邻的色转换部内，因此容易发生串色的问题，为了避免该串色问题，在本公开实施例提供的上述显示面板中，如图2-图5所示，透明隔热层5可以具有多个镂空部和多个隔热部51，隔热部51在驱动基板1上的正投影覆盖第一像素区域A1在驱动基板1上的正投影。这样隔热部51可以保护下方的发光器件3避免高温破坏，而镂空部内可以设置遮光部以防止发生串色问题。
在具体实施时，在本公开实施例提供的上述显示面板中，如图2-图5所示，还包括第一遮光层8，第一遮光层8包括填充镂空部的遮光部81，像素隔离结构6在驱动基板1上的正投影覆盖遮光部81在驱动基板1上的正投影。这样填充在透明隔热层5的镂空部内的遮光部81可以防止相邻像素发生串色。另外，由于隔热部51的制备是在遮光部81之前，因为遮光部81需要高温后烘完成固化，所以需先制备隔热部51对发光器件3进行保护，再制备遮光部 81后翻转进行固化，减小对下层发光器件的热损伤。
具体地，如图2-图5所示，遮光部81的厚度可以与隔热部51厚度相同。
在具体实施时，光刻胶一般分为正性光刻胶和负性光刻胶，正性光刻胶在曝光显影后的形状近似为正梯形，负性光刻胶在曝光显影后的形状近似为倒梯形，对于COE型结构，鉴于实际出光考虑，如图2-图5所示，希望遮光部81为正梯形，所以此时遮光部81优选为正性光刻胶曝光显影形成，而隔热部51采用负性光刻胶曝光显影形成。因此，在本公开实施例提供的上述显示面板中，如图2-图5所示，第一遮光层8的材料为正性光刻胶，透明隔热层5的材料为具有隔热性能的负性光刻胶，具有隔热性能的负性光刻胶本身具体隔热性能，从而可以保护发光器件3不受高温破坏；或，透明隔热层5的材料包括负性光刻胶本体以及混合在负性光刻胶本体中的相变材料，相变材料在加热时吸热，由一种形态转变为另一种形态来实现热量吸收，这样既可以解决本公开实施例提供的像素隔离结构6和遮光部81低温固化不良问题，并且在后续器件使用过程中，还可以吸收发光器件3发热产生的热量。
具体地，如图2-图5所示，由于遮光部81为正性光刻胶曝光显影形成，隔热部51为负性光刻胶曝光显影形成，即遮光部81和隔热部51采用光刻性能相反的光刻胶制备而成，因此遮光部81和隔热部51可以采用同一掩膜版(mask)直接制备，节省一道mask，从而节约成本。
当然，在具体实施时，遮光部81也可以采用负性光刻胶曝光显影形成，隔热部51采用正性光刻胶曝光显影形成。
在具体实施时，在本公开实施例提供的上述显示面板中，相变材料可以为有机相变材料，有机相变材料可以包括但不限于石蜡、高级脂肪酸类、聚烯烃类或醇类。
在具体实施时，在本公开实施例提供的上述显示面板中，如图2-图5所示，由于第一遮光层8的材料为正性光刻胶，透明隔热层5的材料为负性光刻胶，因此，沿驱动基板1的厚度方向，遮光部81的截面形状大致为正梯形，即遮光部81截面中的侧边切线a和底边b切线的夹角θ1小于90度，如图 6A所示；隔热部51的截面形状大致为倒梯形，即隔热部51截面中的侧边c切线和底边d切线的夹角θ2大于90度，如图6B所示。这样可以增大发光器件3的出光角度。
在具体实施时，在本公开实施例提供的上述显示面板中，如图2-图5所示，隔热部51的热导率小于0.1W/m·K，对可见光波段(380nm-780nm)光的透过率大于97％，沿驱动基板1的厚度方向，隔热部51截面中的侧边c切线和底边d切线的夹角θ3可以为90°～110°，如图6B所示；遮光部81对可见光波段(380nm-780nm)光的吸光率大于95％。
在具体实施时，在本公开实施例提供的上述显示面板中，如图1-图5所示，第一遮光层8和透明隔热层5的厚度均为2μm～3μm。
在具体实施时，在本公开实施例提供的上述显示面板中，如图1-图5所示，像素隔离结构6的厚度是透明隔热层5的厚度的2-5倍。具体地，该厚度倍数关系越小，会导致色转换部和发光器件间隔距离太大，导致串色；该厚度倍数关系太大，会导致透明隔热层5无法起到隔热效果，损伤发光器件性能。
在具体实施时，在本公开实施例提供的上述显示面板中，像素隔离结构的颜色可以为黑色、黄色或灰色其中一种，像素隔离结构的厚度可以为7μm～10μm，优选9μm-10μm，对可见光波段(380nm-780nm)光的吸光率大于95％。具体地，黑色像素隔离结构吸收光的能力比黄色、灰色像素隔离结构吸收光的能力强，若想提高色转换层发光的效率，可以将像素隔离结构的颜色设置为黄色或灰色；若想避免外界环境光对器件的影响，则像素隔离结构的颜色可以设置为黑色，根据实际需要进行选择。例如，如图2所示，像素隔离结构6的颜色为黑色；如图3和图5所示，像素隔离结构6的颜色为黄色；如图4所示，像素隔离结构6的颜色为灰色。
在具体实施时，如图2-图5所示，沿驱动基板1的厚度方向，第二像素分隔体61截面中的侧边e切线和底边f切线的夹角θ3可以为60°～85°，如图6C所示。
在具体实施时，在本公开实施例提供的上述显示面板中，像素隔离结构6中还可以具有无机纳米粒子，以图4所示的灰色像素隔离结构6具有无机纳米粒子601为例，无机纳米粒子601一般具有散射作用，无机纳米粒子601用于散射入射至像素隔离结构6侧壁的光。因此采用掺杂有无机纳米粒子的像素隔离结构6，可以提高色转换层的光效利用率，提高显示效果。
在具体实施时，在本公开实施例提供的上述显示面板中，如图4所示，无机纳米粒子601可以包括TiO 2、SiO 2其中之一或组合。当然，无机纳米粒子也可以为其它具有散射作用的材料，在此不做一一列举。
在具体实施时，在本公开实施例提供的上述显示面板中，如图2-图5所示，发光器件3可以为蓝色发光器件，色转换部可以包括红色量子点彩膜71、绿色量子点彩膜72和散射粒子膜73。由于采用红绿蓝三基色实现发光，而发光器件3为蓝色发光器件，因此蓝色量子点彩膜对应位置无需设置蓝色量子点彩膜，填充散射粒子即可，散射粒子可以起到提升发光视角的作用。
在具体实施时，在本公开实施例提供的上述显示面板中，如图5所示，还包括包覆像素隔离结构6的反射结构9，反射结构9的材料为金属，金属材料一方面可以用来反射光，提升量子点彩膜层的光效利用率，另一方面可以阻挡墨水在相邻子像素区域11之间进行串扰的问题。反射结构9，可以提升光的反射率，反射率的提升有助于提高光取出效果，反射结构9对可见光波段(380nm-780nm)光的反射率优选为50～70％。
在具体实施时，反射结构的材料可以为但不限于银或铝及合金，反射结构9的厚度为200nm-400nm。
需要说明的，本公开实施例图5仅是以像素隔离结构6的颜色为黄色时设置反射结构9，当然，像素隔离结构6的颜色为黑色或灰色时，也可以设置反射结构9。
在具体实施时，在本公开实施例提供的上述显示面板中，如图7所示，像素隔离结构6的材料可以与遮光部81的材料相同，例如均为黑矩阵材料(BM)，这样像素隔离结构6与遮光部81可以为一体结构。这样可以通过一 次构图工艺形成像素隔离结构6与遮光部81，不用增加单独制备像素隔离结构6的工艺，可以简化制备工艺流程，节省生产成本，提高生产效率。
在具体实施时，OLED显示面板处于熄屏状态时，为了提升产品档次和市场竞争力，需要显示面板从外界向内看时视区更黑，由于环境光中存在蓝光，在熄屏状态时环境光中的蓝光会激发量子点彩膜发光，因此在本公开实施例提供的上述显示面板中，如图1-图5和图7所示，还包括：覆盖色转换层7和像素隔离结构6的第二封装层10，位于第二封装层10背离驱动基板1一侧且与色转换部(71、72、73)对应的多个滤色部(101、102、103)，以及位于各滤色部(101、102、103)之间的第二遮光层20。具体地，与红色量子点彩膜71对应的位置处设置红色滤色部101，与绿色量子点彩膜72对应的位置处设置绿色滤色部102，与散射粒子膜73对应的位置处设置蓝色滤色部103，以用于在熄屏状态时阻挡外界环境光中的蓝光，提升产品性能。
具体地，如图1-图5和图7所示，第二封装层10的材料可以包括SiOx、SiNx或Al2O3等，第二封装层10的厚度小于1μm，优选小于0.5μm，且第二封装层10的折射率范围在1.7～2.0之间，优选在1.75～1.85之间。
具体地，如图1-图5和图7所示，滤色部(101、102、103)和第二遮光层20的厚度小于3um。
在具体实施时，发光器件包括阴极，外界光经过阴极(一般是金属)会将光反射回来，我们会从画面看到自己，影响观看效果和对比度，因此为了防反光，在本公开实施例提供的上述显示面板中，如图1-图5和图7所示，还包括：位于多个滤色部(101、102、103)背离驱动基板1一侧的偏光片30。该偏光片30为反射型偏光片，优选在蓝光波段反射率略高的反射型偏光片。
在具体实施时，如图1-图5和图7所示，驱动基板1可以为氧化物型薄膜晶体管(Oxide TFT)基板或低温多晶硅型薄膜晶体管(LTPS TFT)基板。具体地，驱动基板1包括衬底基板11以及位于衬底基板11上的薄膜晶体管12。衬底基板11的材料可以为刚性玻璃或者塑料。发光器件3包括位于第一像素区域A1内依次叠层设置的反射阳极31和发光层32和阴极(未示出)， 阴极一般整面设置。
在具体实施时，如图1-图5和图7所示，第一封装层4可以采用薄膜封装(Thin-Film Encapsulation，TFE)，第一封装层4可以包括三层叠层结构，第一层为无机层(SiN或SiON层)，第二层为有机层(IJP)，第三层为无机层(SiN或SiON层)。发光器件可以从上发光(即顶发射器件)，波长中心范围为420nm～470nm，半峰宽为10nm～30nm。第一封装层4具有很高的透明度(例如，透过率＞90％，优选≥95％)，厚度小于10um(80～120ppi)。
在具体实施时，如图8所示，图1-图5和图7中的像素界定层2定义出多个第一像素区域A1，其中与绿色量子点彩膜72对应的第一像素区域A1的面积(LA1)≥与红色量子点彩膜71对应的第一像素区域A1的面积(LA2)≥与散射粒子膜73对应的第一像素区域A1的面积(LA3)。
基于同一发明构思，本公开实施例还提供了一种上述显示面板的制作方法，如图9所示，包括：
S901、提供一驱动基板；
S902、在驱动基板上形成像素界定层；像素界定层包括多个阵列分布的第一像素分隔体，相邻第一像素分隔体围设形成多个第一像素区域；
S903、在第一像素区域内形成对应的发光器件；
S904、形成覆盖像素界定层和多个发光器件的第一封装层；
S905、在第一封装层背离驱动基板一侧形成透明隔热层；其中，透明隔热层在驱动基板上的正投影至少覆盖第一像素区域在驱动基板上的正投影；
S906、在透明隔热层背离驱动基板的一侧形成像素隔离结构；其中，像素隔离结构包括多个阵列分布的第二像素分隔体，相邻第二像素分隔体围设形成多个第二像素区域，第二像素区域与第一像素区域对应设置；
S907、在第二像素区域内形成对应的色转换部。
本公开实施例提供的上述显示面板的制作方法，通过在第一封装层背离驱动基板的一侧形成透明隔热层，透明隔热层可以保护第一封装层下方的发光器件不受高温破坏，从而后续形成像素隔离结构时，可以采用高温固化工 艺，保证像素隔离结构的材料固化完全，防止因像素隔离结构固化不完全导致的色转换层串色的问题。
在具体实施时，在本公开实施例提供的上述制作方法中，在透明隔热层背离驱动基板的一侧形成像素隔离结构，如图10所示，具体可以为：
S1001、在透明隔热层背离驱动基板的一侧沉积像素隔离材料膜层；
S1002、对像素隔离材料膜层进行曝光显影，形成包括多个阵列分布的第二像素分隔体的像素隔离材料膜层；
S1003、在靠近像素隔离材料膜层的一侧对像素隔离材料膜层进行第一次加热固化，形成像素隔离结构。
在具体实施时，在本公开实施例提供的上述制作方法中，如图11所示，在形成像素隔离结构之前，还包括：
S1101、在透明隔热层背离驱动基板的一侧沉积第一遮光材料膜层；
S1102、对第一遮光材料膜层进行曝光显影，形成填充镂空部的第一遮光材料；
S1103、在靠近第一遮光材料膜层的一侧对第一遮光材料进行第二次加热固化，形成遮光部。
在具体实施时，在本公开实施例提供的上述制作方法中，采用同一掩膜版形成透明隔热层和第一遮光层。这样节省一道mask，从而节约成本。
在具体实施时，在本公开实施例提供的上述制作方法中，第一次加热固化和第二次加热固化的温度可以相同，也可以不同，根据材料而定，加热的温度和时间主要与所选用的遮光部和像素隔离结构材料本身有关。在一种可能的实施方式中，例如第一次加热固化时，加热源距离发光器件较远，而第一次加热固化时，加热源距离发光器件较近，可适当提高第一次加热固化的温度，因此第一次加热固化的温度可以大于第二次加热固化的温度，但具体温度取决于两次固化的固化程度。
下面对图2所示的显示面板的制作方法进行详细说明：
(1)制作驱动基板1，具体为在衬底基板11上制作薄膜晶体管12，如 图12A所示，具体制作方法与现有技术相同，在此不做详述。
(2)在驱动基板1上依次形成像素界定层2、反射阳极31、发光层32和阴极(未示出)，如图12B所示；具体地，像素界定层2包括阵列排布的多个第一像素分隔体21，相邻第一像素分隔体21围设形成第一像素区域A1，反射阳极31、发光层32位于第一像素区域A1内，阴极整面覆盖像素界定层2和发光器件3(反射阳极31、发光层32)，像素界定层2、反射阳极31、发光层32和阴极的制作方法与现有技术相同，在此不做详述。
(3)在阴极背离驱动基板1一侧形成第一封装层4，如图12C所示；具体地，第一封装层4可以包括三层叠层结构，第一层为无机层(SiN或SiON层)，第二层为有机层(IJP)，第三层为无机层(SiN或SiON层)。
(4)第一封装层4背离驱动基板1一侧形成透明隔热层5，透明隔热层5具有多个镂空部和隔热部51，如图12D所示；具体地，透明隔热层5的材料可以为具有隔热性能的负性光刻胶或在光刻胶内掺杂相变材料，从而可以采用一道mask以曝光显影的工艺在透明隔热层5形成多个镂空部和隔热部51。
(5)在透明隔热层5的镂空部内制作遮光部81，如图12E所示；具体地，遮光部81的材料为正性光刻胶，采用与制作隔热部51相同的一道mask以曝光显影的工艺形成填充镂空部的遮光部81。
(6)将步骤(5)的结构垂直翻转，对遮光部81进行第二次加热固化(箭头所示)，温度可以≥180℃，如图12F所示，图12F中标号100的结构为加热固化设备。
(7)在固化后的遮光部81背离驱动基板1的一侧采用曝光显影形成像素隔离结构6，像素隔离结构6的材料为树脂，像素隔离结构6具有阵列排布的第二像素分隔体61，相邻第二像素分隔体61围设形成多个第二像素区域A2，如图12G所示。
(8)将步骤(7)的结构垂直翻转，对像素隔离结构6进行第一次加热固化(箭头所示)，温度可以≥180℃，如图12H所示，图12H中标号100的结构为加热固化设备；具体地，第一次加热固化的温度可以大于第二次加热 固化的温度。
(9)在步骤(8)的各第二像素区域A2内形成对应的红色量子点彩膜71、绿色量子点彩膜72和散射粒子膜73，红色量子点彩膜71、绿色量子点彩膜72和散射粒子膜73构成色转换层7，如图12I所示。
(10)在步骤(9)的结构上方形成第二封装层10，如图12J所示；具体地，第二封装层10的材料可以包括SiOx、SiNx或Al2O3等。
(11)在第二封装层10背离驱动基板1的一侧形成与第二像素分隔体61对应的第二遮光层20，在第二遮光层20之间形成与红色量子点彩膜71、绿色量子点彩膜72和散射粒子膜73对应的滤色部(101、102和103)，如图12K所示。
(12)在步骤(11)的结构上方形成偏光片13，如图2所示。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述任一种显示面板。
在具体实施时，在本发明实施例提供的上述显示装置中，如图13-图17所示，还可以包括覆盖显示面板的盖板40。具体地，盖板40可以为刚性盖板或柔性盖板。
该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。该显示装置解决问题的原理与前述量子点发光器件相似，因此该显示装置的实施可以参见前述显示面板的实施，重复之处在此不再赘述。
本公开实施例提供的上述显示面板及其制作方法、显示装置，通过在第一封装层背离驱动基板的一侧设置透明隔热层，透明隔热层可以保护第一封装层下方的发光器件不受高温破坏，从而后续形成像素隔离结构时，可以采用高温固化工艺，保证像素隔离结构的材料固化完全，防止因像素隔离结构固化不完全导致的色转换层串色的问题。
尽管已描述了本公开的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样，倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (19)

  1. 一种显示面板，其中，包括：
    驱动基板；
    像素界定层，位于所述驱动基板的一侧，所述像素界定层包括多个阵列分布的第一像素分隔体，相邻所述第一像素分隔体围设形成多个第一像素区域；
    多个发光器件，位于对应的所述第一像素区域内；
    第一封装层，覆盖所述像素界定层和所述多个发光器件；
    透明隔热层，位于所述第一封装层背离所述驱动基板的一侧，所述透明隔热层在所述驱动基板上的正投影至少覆盖所述第一像素区域在所述驱动基板上的正投影；
    像素隔离结构，位于所述透明隔热层背离所述驱动基板的一侧，所述像素隔离结构包括多个阵列分布的第二像素分隔体，相邻所述第二像素分隔体围设形成多个第二像素区域，所述第二像素区域与所述第一像素区域对应设置；
    色转换层，包括多个色转换部，所述多个色转换部设置在对应的所述第二像素区域内。
  2. 如权利要求1所述的显示面板，其中，所述透明隔热层具有多个镂空部和多个隔热部，所述隔热部在所述驱动基板上的正投影覆盖所述第一像素区域在所述驱动基板上的正投影。
  3. 如权利要求2所述的显示面板，其中，还包括第一遮光层，所述第一遮光层包括填充所述镂空部的遮光部，所述像素隔离结构在所述驱动基板上的正投影覆盖所述遮光部在所述驱动基板上的正投影。
  4. 如权利要求3所述的显示面板，其中，所述第一遮光层的材料为正性光刻胶，所述透明隔热层的材料为具有隔热性能的负性光刻胶，或所述透明隔热层的材料包括负性光刻胶本体以及混合在所述负性光刻胶本体中的相变 材料。
  5. 如权利要求3所述的显示面板，其特征在于，沿所述驱动基板的厚度方向，所述遮光部的截面形状大致为正梯形，所述隔热部的截面形状大致为倒梯形。
  6. 如权利要求4所述的显示面板，其中，所述相变材料为有机相变材料，所述有机相变材料包括石蜡、高级脂肪酸类、聚烯烃类或醇类。
  7. 如权利要求3所述的显示面板，其中，所述第一遮光层和所述透明隔热层的厚度均为2μm～3μm。
  8. 如权利要求3所述的显示面板，其中，所述像素隔离结构的厚度是所述透明隔热层的厚度的2-5倍。
  9. 如权利要求3所述的显示面板，其中，所述像素隔离结构的颜色为黑色、黄色或灰色其中一种。
  10. 如权利要求9所述的显示面板，其中，所述像素隔离结构中具有无机纳米粒子，所述无机纳米粒子用于散射入射至所述像素隔离结构侧壁的光。
  11. 如权利要求3所述的显示面板，其中，所述像素隔离结构的材料与所述遮光部的材料相同，所述像素隔离结构与所述遮光部为一体结构。
  12. 如权利要求1-11任一项所述的显示面板，其中，还包括：覆盖所述色转换层和所述像素隔离结构的第二封装层，位于所述第二封装层背离所述驱动基板一侧且与所述色转换部对应的多个滤色部，以及位于各所述滤色部之间的第二遮光层。
  13. 一种显示装置，其中，包括如权利要求1-12任一项所述的显示面板。
  14. 如权利要求13所述的显示装置，其中，还包括覆盖所述显示面板的盖板。
  15. 一种如权利要求1-12任一项所述的显示面板的制作方法，其中，包括：
    提供一驱动基板；
    在所述驱动基板上形成像素界定层；所述像素界定层包括多个阵列分布 的第一像素分隔体，相邻所述第一像素分隔体围设形成多个第一像素区域；
    在所述第一像素区域内形成对应的发光器件；
    形成覆盖所述像素界定层和所述多个发光器件的第一封装层；
    在所述第一封装层背离所述驱动基板一侧形成透明隔热层；其中，所述透明隔热层在所述驱动基板上的正投影至少覆盖所述第一像素区域在所述驱动基板上的正投影；
    在所述透明隔热层背离所述驱动基板的一侧形成像素隔离结构；其中，所述像素隔离结构包括多个阵列分布的第二像素分隔体，相邻所述第二像素分隔体围设形成多个第二像素区域，所述第二像素区域与所述第一像素区域对应设置；
    在所述第二像素区域内形成对应的色转换部。
  16. 如权利要求15所述的制作方法，其中，在所述透明隔热层背离所述驱动基板的一侧形成像素隔离结构，具体为：
    在所述透明隔热层背离所述驱动基板的一侧沉积像素隔离材料膜层；
    对所述像素隔离材料膜层进行曝光显影，形成包括多个阵列分布的第二像素分隔体的像素隔离材料膜层；
    在所述像素隔离材料膜层远离所述透明隔热层的一侧对所述像素隔离材料膜层进行第一次加热固化，形成所述像素隔离结构。
  17. 如权利要求16所述的制作方法，其中，在形成像素隔离结构之前，还包括：
    在所述透明隔热层背离所述驱动基板的一侧沉积第一遮光材料膜层；
    对所述第一遮光材料膜层进行曝光显影，形成填充所述镂空部的第一遮光材料；
    在所述第一遮光材料膜层远离所述透明隔热层的一侧对所述第一遮光材料进行第二次加热固化，形成所述遮光部。
  18. 如权利要求17所述的制作方法，其中，采用同一掩膜版形成所述透明隔热层和所述第一遮光层。
  19. 如权利要求17所述的制作方法，其中，所述第一次加热固化的温度大于所述第二次加热固化的温度。
PCT/CN2021/100704 2021-06-17 2021-06-17 一种显示面板及其制作方法、显示装置 WO2022261904A1 (zh)

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