WO2021109814A1

WO2021109814A1 - Coating device and electrode apparatus and application thereof

Info

Publication number: WO2021109814A1
Application number: PCT/CN2020/128064
Authority: WO
Inventors: 宗坚; 韦庆宇; 赵天祥
Original assignee: 江苏菲沃泰纳米科技有限公司
Priority date: 2019-12-04
Filing date: 2020-11-11
Publication date: 2021-06-10
Also published as: TW202122644A; TWI755161B

Abstract

A coating device and an electrode apparatus and application thereof. The electrode apparatus comprises a group of electrode elements and a power supply unit, wherein a supporting space is defined between every two adjacent electrode elements and is used for containing a base material; the power supply unit is provided with a first pole end and a second pole end which serve as positive and negative poles for each other; the electrode elements are alternately connected to the first pole end and the second pole end; and the power supply unit is used for providing a voltage to enable the adjacent electrode elements to serve as positive and negative poles for each other so as to form an electric field, so that the coating device can prepare a thin film on the surface of the base material by means of a chemical vapor deposition mode.

Description

Coating equipment and its electrode device and application

Technical field

The present invention relates to the field of coating, and further relates to coating equipment and electrode devices and applications thereof.

Background technique

With the rapid development of coating technology, coating on the surface of the substrate has gradually become an indispensable process. The coating technology, such as plasma chemical vapor deposition or physical vapor deposition, coats at least one layer on the surface of the substrate. Thin film or nano-coating to enhance the strength, scratch resistance, wear resistance, heat dissipation, water resistance, corrosion resistance or low friction properties of the substrate surface.

As far as the current market is concerned, such substrates are PCB circuit boards, electronic devices, mobile phones, keyboards, computers, etc. For example, the current 5G mobile phones, especially full-screen or full-screen curved mobile phones, flexible screen mobile phones, etc. not only require high light transmittance, high hardness and wear resistance, but also require drop resistance. It is very important to coat the surface of the cover to enhance the performance of the screen. One of the important links.

Diamond Like Carbon (DLC) is a recently emerging metastable material formed by combining sp3 and sp2 bonds. It is a short-range ordered and long-range disordered film. It combines the excellent properties of diamond and graphite. In terms of mechanical properties, the DLC film has high hardness and wear resistance; in terms of optical properties, it has good light transmittance and anti-reflection function; it also has good thermal conductivity and biocompatibility. In the coating process, the substrate is placed in a vacuum reaction chamber (not an absolute vacuum) of a coating equipment. Hydrocarbon, inert gas, and hydrogen are introduced into the vacuum reaction chamber, and radio frequency and/or high pressure are used. The pulsed power source generates plasma to activate the chemical vapor deposition reaction, and the diamond-like carbon film is prepared on the surface of the substrate.

The patent number CN201517131U discloses a device for preparing diamond-like thin films. The upper and lower space positions in the reaction chamber are respectively equipped with a cathode composed of a number of hollow stainless steel and an anode composed of a flat screen, and a number of hollow stainless steel needles are fixed on the cover through a ceramic tube. The bottom surface of the body is arranged in a row to form a needle-plate discharge structure, and the cathode and anode are respectively connected with a high-voltage power supply by wires. It can be seen that this installation method of cathode and anode can only place the substrate in one layer, and the space utilization is extremely low, which is not conducive to large-area batch coating.

For another example, the patent number CN203411606U discloses a batch diamond-like carbon coating coating equipment, which includes multiple cavities. The equipment is extended to multiple cavities with a single cavity, and the operation process will buffer the coating in the early stage and cool it in the later stage of the coating. Separation such as buffering is performed in multiple cavities to achieve rapid batch preparation of coatings. However, this solution requires a high degree of operational correlation among multiple cavities of the device, and the manufacturing cost is significantly increased.

During the coating process, the electrode setting of the coating equipment is one of the important factors affecting the coating process. However, the coating equipment currently on the market has great disadvantages in terms of electrode settings, such as the inability to meet the demand for large-scale coating, the quality of the prepared film is poor, and the yield rate is low.

Coating technology is an effective means to improve the surface performance of materials. It enhances the strength, scratch resistance, wear resistance, heat dissipation, water resistance, and resistance of the surface of the workpiece to be coated by forming a film layer on the surface of the workpiece to be coated. Corrosive or low friction properties.

From the current market demand, the workpieces to be coated can be PCB circuit boards, electronic devices, mobile phones, keyboards, computers, and so on. Especially for mobile phones, it is not only required that the film layer can enhance the wear resistance and strength of the surface of the mobile phone, but also has higher requirements for light transmittance.

There are mainly two common coating technologies, chemical vapor deposition coating technology and physical vapor deposition coating technology. Chemical vapor deposition is a deposition process that uses the principle of chemical reaction to separate solid phase substances from gas phase substances and deposit them on the working surface to form a coating film (Li Jingui, Xiao Dingquan, Modern Surface Engineering Design Manual. Beijing: National Defense Industry Press, 2000). Physical vapor deposition refers to a vapor deposition process performed under vacuum conditions when at least one deposition element is atomized (atomized) (Li Jingui, Xiao Dingquan, Modern Surface Engineering Design Manual. Beijing: National Defense Industry Press, 2000 ).

When the coating technology currently used is used to form a film on the surface of a medium such as plastic, glass, etc., it is easy to cause charge accumulation due to poor conductivity. In general coating equipment, there are usually two electrode plates, and then the sample to be coated is placed between the two electrode plates, such as parallel electrode plates, and the quasi-static plasma between the two is nonlinear Distribution, there is a large voltage drop in the ion sheath passing through the loaded electrode, while the voltage drop of the plasma is very small. The ions in the plasma are accelerated by the sheath and bombard the cathode surface, releasing secondary electrons from the cathode surface, and the secondary electrons are accelerated Into the plasma, these high-energy electrons collide with gas molecules and ionize them. At the same time, the ions between the neutral groups collide with the neutral groups, and a series of complex chemical reactions occur.

Due to the poor conductivity of the material itself, it is easy to accumulate positive charges on the negatively biased electrode plate. As the coating time increases, the film layer will become more and more difficult to form. That is to say, with the extension of the coating time, the growth of the film thickness per unit time is getting slower and slower. Because the positive charge accumulated in the negatively biased electrode plate forms a positive electric field, which prevents the positive ions from reaching the surface of the sample to be coated.

Summary of the invention

An advantage of the present invention is to provide a coating equipment and its electrode device and application, wherein the coating equipment is used to prepare at least one thin film or coating on the surface of a substrate, wherein the coating equipment meets the demand for mass production.

Another advantage of the present invention is to provide a coating device and its electrode device and application, wherein the electrode device of the coating device can meet the demand for mass production of thin films and effectively improve the quality of the prepared thin films. Improve the yield.

Another advantage of the present invention is to provide a coating equipment and its electrode device and application, wherein the coating equipment can meet the maximum number of layout of the substrate, improve the space utilization rate of the coating equipment, and satisfy all The coating requirements of the substrate to achieve mass production.

Another advantage of the present invention is to provide a coating device and its electrode device and application, wherein the electrode device of the coating device has a plurality of electrode elements, wherein a supporting space is defined between adjacent electrode elements. When placing the substrate, the adjacent electrode elements are mutually positive and negative, so that the coating equipment can prepare the thin film on the surface of the substrate by chemical vapor deposition.

Another advantage of the present invention is to provide a coating equipment and its electrode device and application, wherein the electrode elements are arranged side by side, so that an electric field is formed between the adjacent electrode elements, thereby ensuring the quality of the coating.

Another advantage of the present invention is to provide a coating equipment and its electrode device and application, wherein the adjacent electrode elements can alternately switch the positive and negative electrodes, so that the electric field direction of the electric field can be alternately changed, so that the A denser film is prepared on the surface of the substrate to improve the quality of the film.

Another advantage of the present invention is to provide a coating equipment and its electrode device and application, in which the electrode elements that are mutually positive and negative are insulated to ensure the reliability and safety of the circuit.

Another advantage of the present invention is to provide a coating equipment and its electrode device and application, wherein the gas filled into the chamber can be diffused to the support space as uniformly as possible, so that all of the substrate The surface is plated with the film as uniformly as possible to achieve unified production.

Another advantage of the present invention is to provide a coating equipment and its electrode device and application, which has a simple structure, good applicability and low cost.

Another advantage of the present invention is to provide a coating equipment and a working method of the coating equipment, wherein the coating equipment can ensure the stability of the coating process.

Another advantage of the present invention is to provide a coating equipment and a working method of the coating equipment, wherein the coating equipment can reduce the accumulation of positive charges on the surface of the workpiece to be coated.

Another advantage of the present invention is to provide a coating equipment and a working method of the coating equipment, wherein the coating equipment can coat films in batches at a faster speed and higher efficiency in a single coating process.

Another advantage of the present invention is to provide a coating equipment and a working method of the coating equipment, wherein the coating equipment provides a multi-layer support, wherein the support can accommodate a plurality of workpieces to be coated, and because the positive electrode is accumulated in the coating to be coated The obstacle to the coating caused by the surface of the workpiece can be reduced.

According to one aspect of the present invention, the present invention provides a coating equipment including:

A cavity with a cavity; and

An electrode device, wherein the electrode device includes a set of electrode elements and a power supply unit, wherein the power supply unit has a first terminal and a second terminal that are mutually positive and negative, wherein the electrode element is disposed at all In the cavity of the cavity, a support space is defined between the adjacent electrode elements for placing the substrate, wherein each of the electrode elements is alternately connected to the first terminal and the second terminal , Wherein the chamber is adapted to be filled with reaction raw materials, and the power supply unit is used to provide voltage so that the adjacent electrode elements are mutually positive and negative to form an electric field for the coating equipment to perform chemical vapor deposition The method prepares the film on the surface of the substrate.

In some embodiments, the power supply unit includes a pulse power supply, and the pulse power supply is implemented as a bidirectional pulse power supply or a unidirectional negative bias pulse power supply.

In some embodiments, each of the electrode elements is divided into a group of first electrode elements and a group of second electrode elements, wherein the first electrode elements and the second electrode elements are arranged alternately, and the first electrode elements are arranged alternately. The electrode element is electrically connected to the first terminal, and the second electrode element is electrically connected to the second terminal.

In some embodiments, the electrode device further includes at least one support, wherein each of the electrode elements is mounted on the support in layers, and the support is used to support one of the coating equipment. Inside the cavity of the cavity, the adjacent first electrode element and the second electrode element are not conductive.

In some embodiments, the supporting member includes a first supporting member and a second supporting member, and each of the electrode elements is supported on one of the first supporting member and the second supporting member in layers. Wherein the first terminal is electrically connected to each of the first electrode elements through the first support, and the second terminal is electrically connected to each of the second electrode elements through the second support, The first support member and the second electrode element are insulated and connected, and the second support member and the first electrode element are insulated and connected.

In some embodiments, the electrode device further includes a set of insulating members, wherein the insulating member is disposed between the first support member and the second electrode element, and the insulating member is disposed on Between the second supporting member and the first electrode element, wherein the insulating member is disposed between the supporting member and the cavity of the coating equipment.

In some embodiments, the electrode device further includes a set of supporting layers, wherein the supporting layers are mounted on the supporting member in layers, and the supporting space is formed between adjacent supporting layers, The first electrode element and the second electrode element are alternately supported on the support layer of the adjacent layer, and the support layer is made of a non-conductive material.

In some embodiments, the electrode element has a set of through holes to communicate with the adjacent supporting spaces.

According to another aspect of the present invention, the present invention further provides a coating method of a coating equipment, including the steps:

A. A first terminal and a second terminal of a power supply unit, which are mutually positive and negative, are alternately connected to a group of electrode elements of an electrode device, wherein the electrode elements are arranged in a cavity of the coating equipment The chamber of, wherein a support space is defined between the adjacent electrode elements for supporting the substrate, and the power supply unit is used to provide voltage so that the adjacent electrode elements are mutually positive and negative to form an electric field; with

B. Prepare a thin film on the surface of the substrate by means of chemical vapor deposition.

In some embodiments, the power supply unit includes a pulse power supply for providing pulse voltage, wherein the pulse power supply is implemented as a bidirectional pulse power supply or a unidirectional negative bias pulse power supply.

In some embodiments, the adjacent electrode elements alternate positive and negative poles to alternately change the electric field direction of the electric field.

According to another aspect of the present invention, the present invention further provides a method for installing an electrode device of a coating equipment, including the following steps:

a. Alternately arrange a group of electrode elements in a cavity of a cavity of the coating equipment, wherein a support space is defined between adjacent electrode elements for supporting the substrate; and

b. Electrically connect the adjacent electrode elements to the positive and negative electrodes of a power supply unit to form an electric field, wherein the adjacent electrode elements do not conduct electricity, so that the coating equipment can be deposited by chemical vapor deposition. A film is prepared on the surface of the substrate.

In some embodiments, the step b includes electrically connecting a first electrode element to the first terminal of the power supply unit, and electrically connecting a second electrode element to the second terminal of the power supply unit, wherein The first terminal and the second terminal are mutually positive and negative, and the first electrode element and the second electrode element are alternately arranged and non-conductive.

In some embodiments, the step b includes supporting each of the electrode elements on at least one support in layers, wherein the support is used to support the cavity of the cavity.

In some embodiments, the step b includes that the first terminal is electrically connected to each of the first electrode elements through a first supporting member of the supporting member, and the second terminal is electrically connected to each of the first electrode elements through a first supporting member of the supporting member. A second support member of the second support member is electrically connected to each of the second electrode elements, wherein the first support member and the second electrode element are electrically connected to each other, and the second support member is electrically connected to the second electrode element. The first electrode elements are insulated and connected.

In some embodiments, the step b includes installing a group of supporting layers on the supporting member in layers to form the supporting space, and forming the supporting space between adjacent supporting layers, wherein The first electrode element and the second electrode element are alternately supported on the support layer of an adjacent layer, wherein the support layer is made of a non-conductive material.

According to another aspect of the present invention, the present invention provides an electrode device used in a coating equipment to prepare a thin film on the surface of a substrate, wherein the electrode device includes:

A group of electrode elements, wherein a supporting space is defined between adjacent electrode elements for placing the substrate; and

A power supply unit, wherein the power supply unit has a first terminal and a second terminal that are mutually positive and negative, wherein each of the electrode elements is alternately connected to the first terminal and the second terminal, wherein the The power supply unit is used to provide voltage so that the adjacent electrode elements are mutually positive and negative to form an electric field, so that the coating equipment can prepare a thin film on the surface of the substrate by chemical vapor deposition.

In some embodiments, the power supply unit is a pulse power supply.

In some embodiments, the pulse power supply is implemented as a bidirectional pulse power supply, wherein the value of the positive voltage value of the bidirectional pulse power supply is less than or equal to the value of the negative voltage value.

In some embodiments, the pulse power supply is implemented as a unidirectional negative-bias pulse power supply, and the positive pole of the pulse power supply is a null potential.

In some embodiments, a plurality of the electrode elements are arranged in a layered structure, and the supporting space is formed between the electrode elements of adjacent layers to support the substrate.

In some embodiments, a plurality of the electrode elements extend radially with a central axis, and the supporting space extending in the radial direction is formed between two adjacent electrode elements.

In some embodiments, the electrode element is implemented as one or a combination selected from the group consisting of a metal plate structure, a metal bar grid structure, and a metal mesh structure.

According to another aspect of the present invention, the present invention provides a coating equipment for coating at least one workpiece to be coated, wherein the coating equipment includes:

A reaction chamber, wherein the reaction chamber has a reaction chamber, and the reaction chamber is used for accommodating the workpiece to be coated;

A gas supply part, wherein the gas supply part is used to supply gas to the reaction chamber;

An air extraction device, wherein the air extraction device is connected to the reaction chamber body so as to be able to communicate with the reaction chamber, and the air extraction device is used to control the vacuum degree of the reaction chamber; and

An asymmetric bipolar pulse power supply, wherein the asymmetric bipolar pulse power supply is used to provide asymmetric positive and negative pulses to the reaction chamber, when the asymmetric bipolar pulse power is connected , Generating plasma in the reaction chamber to enhance the chemical reaction of the gas to form a film layer on the surface of the coated workpiece.

According to at least one embodiment of the present invention, the coating equipment further includes a support, wherein at least part of the support is made of conductive material, and the asymmetric bipolar pulse power supply is conductively connected to the Bracket.

According to at least one embodiment of the present invention, the support includes a multi-layer support member, wherein the support members are held at different height positions of the reaction chamber at intervals, and at least one of the support members is conductively connected The asymmetric bipolar pulse power supply is used as the cathode of the asymmetric bipolar pulse power supply.

According to at least one embodiment of the present invention, at least one of the support members is conductively connected to the asymmetric bipolar pulse power source to serve as an anode of the asymmetric bipolar pulse power source.

According to at least one embodiment of the present invention, the support members as cathodes and anodes are alternately arranged.

According to at least one embodiment of the present invention, the support further includes at least one connecting member, and the supporting member is held at different height positions of the reaction chamber by the connecting member.

According to at least one embodiment of the present invention, the coating equipment further includes a radio frequency power supply, wherein at least one of the support members is conductively connected to the radio frequency power supply.

According to at least one embodiment of the present invention, the working mode of the asymmetric bipolar pulsed power supply is to alternately work in positive and negative directions within a working period of time.

According to at least one embodiment of the present invention, the asymmetric bipolar pulse power supply provides asymmetric positive and negative pulses during a working period of time, and during a predetermined period of time during the working period of time. The working mode is continuous output of positive pulse, continuous output of negative pulse, continuous output of asymmetric positive and negative pulses or continuous output of asymmetric bipolar positive and negative pulses.

According to at least one embodiment of the present invention, the working mode of the asymmetric bipolar pulse power supply during a part of the working time period is unipolar positive pulse, unipolar negative pulse, and asymmetric bipolar Positive and negative pulses or symmetrical bipolar positive and negative pulses.

According to another aspect of the present invention, the present invention provides a working method of a coating equipment, which includes the following steps:

An asymmetric bipolar pulse power source operates with a positive pulse to neutralize the charge accumulated on the surface of at least one workpiece to be coated, wherein the workpiece to be coated is located in a reaction chamber of a coating device.

According to at least one embodiment of the present invention, in the above method, the cathode of the asymmetric bipolar pulse power supply is located below the workpiece to be coated.

According to at least one embodiment of the present invention, in the above method, the workpiece to be coated is supported on a support, wherein at least part of the support serves as a cathode of the asymmetric bipolar pulse power supply.

According to at least one embodiment of the present invention, the working method further includes the following steps:

The asymmetric bipolar pulsed power source ionizes the gas to form a plasma to enhance the chemical reaction.

A radio frequency power supply discharges in the reaction chamber.

According to at least one embodiment of the present invention, in the above method, a plurality of the workpieces to be coated are respectively supported on the support members arranged in multiple layers, wherein each of the support members serves as the asymmetric bipolar pulse The cathode of the power supply is discharged.

According to at least one embodiment of the present invention, the working mode of the asymmetric bipolar pulsed power supply is alternately working in positive and negative directions within a period of time.

According to at least one embodiment of the present invention, the pulse duty ratio of the asymmetric bipolar pulse power supply ranges from 5 to 90%, and the pulse duty ratio of the asymmetric bipolar pulse power supply is set to be independent and continuous Adjustable.

According to at least one embodiment of the present invention, the output frequency range of the asymmetric bipolar pulse power supply is 1KHz-40KHz.

Description of the drawings

Fig. 1 is a perspective view of a coating equipment according to a first preferred embodiment of the present invention.

2A is a three-dimensional schematic diagram of an electrode device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

2B is a perspective schematic diagram of another modified implementation of the electrode device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

FIG. 2C is a perspective schematic diagram of yet another modified implementation of the electrode device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

3A is a schematic diagram of the structure of the electrode element of the electrode device of the electrode device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

3B is a schematic structural view of another modified implementation of the electrode element of the electrode device of the electrode device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

Fig. 4 is a schematic diagram of a module of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

FIG. 5 is a schematic diagram of another modified implementation of the electrode device of the coating equipment according to the above-mentioned preferred embodiment of the present invention.

Fig. 6A is a schematic diagram of a bracket according to the second preferred embodiment of the present invention.

Fig. 6B is a schematic diagram of the discharge application of the bracket according to the above-mentioned preferred embodiment of the present invention.

Fig. 7 is a schematic diagram of a coating equipment according to a preferred embodiment of the present invention.

Fig. 8 is a schematic diagram of another embodiment of the stent according to the above-mentioned preferred embodiment of the present invention.

Fig. 9 is a schematic diagram of another embodiment of the stent according to the above-mentioned preferred embodiment of the present invention.

Fig. 10 is a schematic diagram of another embodiment of the stent according to the above-mentioned preferred embodiment of the present invention.

Detailed ways

The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments in the following description are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the present invention defined in the following description can be applied to other embodiments, modifications, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the present invention.

Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention And to simplify the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore the above terms should not be understood as limiting the present invention.

It can be understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, and in another embodiment, the number of the element The number can be multiple, and the term "one" cannot be understood as a restriction on the number.

In the description of this specification, descriptions with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean specific features described in conjunction with the embodiment or example , Structures, materials or features are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples and the features of the different embodiments or examples described in this specification without contradicting each other.

Figures 1 to 5 show a coating equipment 100 according to a first preferred embodiment of the present invention, wherein the coating equipment 100 includes a cavity 10 and at least one electrode device 20, wherein the cavity 10 has A sealable chamber 101, wherein the electrode device 20 is set in the chamber 101, wherein the chamber 101 is adapted to be fed with gaseous materials such as nitrogen, carbon tetrafluoride or helium Plasma source gas of inert gas such as gas, argon, reactive gas such as hydrogen, hydrocarbon gas, or auxiliary gas of doping elements such as N, Si, F, and B. The electrode device 20 includes a set of electrode elements 211 and a power supply unit 30. The power supply unit 30 is used to provide radio frequency and/or pulse voltage to act on the gas in the chamber 101 so as to be in the chamber 101. Create a plasma environment. The power supply unit 30 has a first terminal 301 and a second terminal 302 that are mutually positive and negative, and a support space 201 is defined between adjacent electrode elements 211 for placing the substrate 600, wherein Each of the electrode elements is alternately connected to the first terminal 301 and the second terminal 302, wherein the power supply unit 30 is used to provide voltage so that the adjacent electrode elements 211 are mutually positive and negative to form An electric field is used for the coating equipment 100 to prepare a thin film on the surface of the substrate 600 by chemical deposition.

Further, this embodiment also provides a coating method of the coating equipment 100, which includes the steps:

S10. Alternately connect the first terminal 301 and the second terminal 302 of the power supply unit 30 to each of the electrode elements 211 of the electrode device 20, wherein between adjacent electrode elements 211 Defining the supporting space 201 for supporting the substrate 600; and

S20, preparing the thin film on the surface of the substrate 600 by means of chemical vapor deposition.

It should be noted that the electrode elements 211, which are mutually positive and negative, are insulated, that is, non-conductive, to ensure the reliability and safety of the circuit.

Preferably, each of the electrode elements 211 is divided into a set of first electrode elements 2111 and a set of second electrode elements 2112, wherein each of the first electrode elements 2111 and each of the second electrode elements 2112 are alternately arranged opposite to each other, wherein The first electrode element 2111 is electrically connected to the first terminal 301, and the second electrode element 2112 is electrically connected to the second terminal 302, so that the first electrode element 2111 is connected to the adjacent The second electrode elements 2112 are mutually positive and negative to form an electric field in the supporting space 201, so that the particles in the supporting space 201 are deposited on the surface of the substrate 600 in a directional movement under the action of the electric field. , To prepare the film.

It is worth mentioning that the first pole 301 and the second pole 302 of the power supply unit 30 can alternately switch positive and negative poles, so that the direction of the electric field is alternately changed.

Preferably, as shown in FIG. 4, the power supply unit 30 includes a pulse power supply 31, such as a high-voltage pulse power supply, wherein the pulse power supply 31 has the first terminal 301 and the second terminal that are mutually positive and negative. 302, wherein the pulse power source 31 is a bidirectional pulse power source, wherein the first terminal 301 and the second terminal 302 can be alternately positive and negative, so that the direction of the electric field can be alternately changed. That is, when the first terminal 301 is a negative terminal and the second terminal 302 is a positive terminal, the first electrode element 2111 is a negative electrode, and the second electrode element 2112 is a positive electrode. When the first terminal 301 is a positive terminal and the second terminal 302 is a negative terminal, the first electrode element 2111 is a positive electrode, and the second electrode element 2112 is a negative electrode.

It can be understood that since each of the electrode elements 211 can alternately become a negative electrode, that is, the support space 201 between each of the electrode elements 211 can be used to place the substrate 600, and it can satisfy all the requirements. The thin film is prepared on the surface of the substrate 600 so as to satisfy the maximum number of the substrate 600 arranged on the electrode device 20 and satisfy all the coating requirements of the substrate 600.

It should be pointed out that the time ratio of alternating positive and negative poles between the first terminal 301 and the second terminal 302 of the pulse power source 31 can be preset to adjust the preparation on the surface of the substrate 600. The thickness or compactness of the film is preferably equal to the proportion of time to prepare a substantially uniform film on the surface of each of the substrates 600, which is not limited here.

Further, each of the substrates 600 is respectively supported on the upper side of each of the electrode elements 211, that is, the upper side of the first electrode element 2111 and the upper side of the second electrode element 2112 are both placed in a certain amount. The substrate 600 is designed to meet the needs of mass production.

In the process of preparing the thin film by the coating equipment 100, when the first electrode element 2111 is a negative electrode and the adjacent second electrode element 2112 is a positive electrode, the direction of the electric field is determined by the second electrode element 2112. The electrode element 2112 to the first electrode element 2111, wherein the positive particles (or positive ions) in the support space 201 move toward the direction of the first electrode element 2111 under the action of the electric field, and are deposited on The surface of the substrate 600 on the upper side of the first electrode element 2111. When the first electrode element 2111 is a positive electrode and the adjacent second electrode element 2112 is a negative electrode, the direction of the electric field is from the first electrode element 2111 to the second electrode element 2112, and the direction of the electric field is from the first electrode element 2111 to the second electrode element 2112. The positive particles in the supporting space 201 move toward the direction of the second electrode element 2112 under the action of the electric field, and are deposited on the surface of the substrate 600 on the upper side of the second electrode element 2112.

It should be pointed out that in the process of preparing the film, under the action of an electric field, the positive particles may accelerate and bombard the surface of the substrate 600 or particles that have been deposited on the surface of the substrate 600. A bombardment pit is formed on the surface of the substrate 600, which causes the adhesion of the particles that have been deposited on the surface of the substrate 600 to weaken, thereby forming particles that are not firmly attached. In the coating equipment 100 provided in this embodiment, since the first terminal 301 and the second terminal 302 of the pulse power source 31 alternately change positive and negative poles, the first electrode element 2111 and the first electrode element 2111 are The direction of the electric field between the two electrode elements 2112 is alternately reversed. Since the voltage of the pulse power supply 31 can be adjusted, the field strength of the electric field can be adjusted so that the unattached particles on the surface of the substrate 600 can be detached, and the firmly attached particles are continuously It is deposited on the surface of the substrate 600 to form a denser film.

In other words, taking the preparation of the thin film on the surface of the substrate 600 on the upper side of the first electrode element 2111 as an example, when the first electrode element 2111 is a negative electrode, the second electrode element 2112 is a positive electrode. At this time, the positive particles in the support space 201 are accelerated and bombarded by the electric field and adhere to the surface of the substrate 600, wherein the firmly adhered particles are substantially uniformly arranged on the surface of the substrate 600 and mutually intermittent. The adhesion between the particles is strong, and it is not easy to separate from the surface of the substrate 600, and the adhesion between the particles that are not uniformly arranged on the surface of the substrate 600 is weak, that is, the particles that are not firmly attached are formed, which are easy to detach. On the surface of the substrate 600. With the change of the electrodes of the pulse power source 31, the first electrode element 2111 is a positive electrode and the second electrode element 2112 is a negative electrode, so that the direction of the electric field is reversed, and the particles that are not firmly attached Detach from the surface of the substrate 600 under the action of an electric field, and the firmly attached particles still remain on the surface of the substrate 600, so that the surface of the substrate 600 is basically only attached to the surface of the substrate 600. The particles, that is, the particles attached to the surface of the substrate 600 are arranged substantially uniformly. Further, based on the pulse power source 31 repeatedly changing the positive and negative electrodes, the surface of the substrate 600 is continuously deposited with the firmly adhered particles uniformly arranged, and finally a dense and uniform thin film is formed, which effectively improves The hardness or quality of the film is improved, and the yield is improved.

Optionally, the pulse power supply 31 is implemented as a bidirectional pulse power supply, wherein the positive voltage value and the negative pressure value of the bidirectional pulse power supply are substantially the same in value, and the duration of the positive pressure and the negative pressure is substantially the same, so that the first The surface of the substrate 600 on the upper side of the electrode element 2111 and the surface of the substrate 600 on the upper side of the second electrode element 2112 are both prepared with uniform and consistent thin films, so as to be standardized and meet the requirements of mass production. demand.

Optionally, the value of the positive pressure value of the bidirectional pulse power supply is less than the value of the negative pressure value, so as to change the electric field force experienced by the positive particles and prevent the firmly attached particles from being separated from the substrate 600. Surface to further ensure the quality of the film.

Optionally, the pulse power supply 31 is implemented as a unidirectional negative bias pulse power supply, wherein the positive electrode of the pulse power supply 31 is zero potential or null potential and has a certain negative voltage, that is, the first electrode element 2111 and the The second electrode elements 2112 alternately form a negative pressure, so as to meet the demand for mass production of thin films.

In this embodiment, the film coating equipment 100 adopts a plasma chemical vapor deposition method to prepare the film or coating on the surface of the substrate 600. That is, the thin film is deposited and formed on the surface of the substrate 600, thereby improving the mechanical, optical, or chemical properties of the surface of the substrate 600, wherein the substrate 600 has a predetermined shape and structure. Products that need to be coated, such as PCB circuit boards, mobile phones, electronic equipment, electronic product covers, electronic product display screens, mobile phone glass screens, computer screens, mobile phone back covers, electronic device shells, keyboard films or other types of products that need to be coated, etc. There is no restriction here. For example, the coating equipment 100 prepares the thin film on the display screen of an electronic product, which can effectively solve the problems of the display screen of the electronic product that the display screen is not resistant to falling, is not wear-resistant, and the surface strengthening cost is high.

Further, the coating equipment 100 can prepare the thin films with different properties on the surface of different types or models of substrates 600 respectively, that is, the coating equipment 100 can realize the coating of different types or types of substrates. 600 is coated separately, and the performance of the film 100 can be diversified, which improves compatibility and saves costs. In this embodiment, the thin film is implemented as a diamond-like carbon thin film (DLC thin film), that is, the coating device 100 takes the preparation of the DLC thin film on the surface of the substrate 600 as an example. Optionally, the thin film includes one or more layers, thin films, or nano-coatings that are plated on the surface of the substrate 600. Optionally, the film can be implemented as a diamond-like carbon film (DLC film), an organic silicon nano-protective coating, an organic silicon hard nano-protective coating, a composite structure high-insulation hard nano-protective coating, a modulated structure High-insulation nano-protective coating, plasma polymerization coating, gradient-increasing structure liquid-repellent coating, gradient-decreasing structure liquid-repellent coating, coating with controllable crosslinking degree, waterproof and click-through coating, low adhesion and corrosion Coating, liquid-repellent coating with multilayer structure, polyurethane nano-coating, acrylamide nano-coating, anti-static and liquid-proof nano-coating, epoxy nano-coating, high-transparency and low-color difference nano-coating, high adhesion Anti-aging nano-coating, silicon-containing copolymer nano-coating or polyimide nano-coating, etc. Correspondingly, the coating device 100 can be implemented to plate any one or more of the above-mentioned films or coatings on the surface of the substrate 600 to improve the surface properties of the substrate 600, which is not limited herein.

Further, the power supply unit 30 further includes a radio frequency power supply 32, wherein the radio frequency power supply 32 generates a radio frequency electric field in the cavity 101 of the cavity 10 by directly loading on the electrode plate to act on the The gas in the chamber 101, wherein the pulse power source 31 is used to provide a high-voltage pulse bias to act on the gas in the chamber 101. Specifically, during film coating, the radio frequency power supply 32 discharges the gas in the chamber 101 by providing a radio frequency electric field, so that the chamber 101 is in a plasma environment and the reactive gas raw materials are in a high-energy state. The pulse power source 31 generates a strong electric field in the chamber 101 by providing a strong voltage in a high-voltage pulse bias, so that the active particles (that is, positive ions) in a high-energy state are subjected to the strong electric field to directionally accelerate the deposition on the chamber 101. On the surface of the substrate 600, an amorphous carbon network structure is formed, and the pulsed power source 31 provides the empty voltage or the low voltage state in the high-voltage pulse bias to make the deposited on the surface of the substrate 600 The amorphous carbon network structure relaxes freely, and under the action of thermodynamics, the carbon structure transforms into a stable phase-the curved graphene sheet structure, and is embedded in the amorphous carbon network, so as to be on the surface of the substrate 600 The thin film is formed.

The radio frequency power supply 31 can also be used as a plasma supporting power supply. The radio frequency power supply 31 is composed of a radio frequency power source, an impedance matcher and an impedance power meter, and the radio frequency power supply 31 is installed in the cavity 10 to provide The radio frequency electric field acts on the gas in the chamber 101. The radio frequency power supply 31 preferably provides radio frequency power of 13.56 MHz.

Further, the radio frequency power supply 31 forms the radio frequency electric field in the cavity 101 of the cavity 10 by directly loading the radio frequency voltage on an electrode plate of the cavity 10 to act The gas in the chamber 101 satisfies the coating demand. Optionally, the radio frequency power supply 31 can also be implemented as an inductive coupling effect of a coil, that is, as an ICP, an alternating magnetic field is generated in the chamber 101, so as to ensure that the chamber 101 is The gas is fully and uniformly ionized, which can also meet the coating requirements of the coating equipment 100, which is not limited here.

It should be noted that the pulsed power supply 31 ionizes the gas in the chamber 101 through the glow discharge effect, and at the same time has the effect of directional pulling and accelerating the positive ions in the chamber 101, so that the positive ions have The bombardment effect accelerates the deposition on the surface of the substrate 600, thereby preparing the dense and high-hardness thin film on the surface of the substrate 600.

It can be seen that the electrode device 20 can provide as much space as possible for installing and arranging a large number of the substrates 600, which improves the space utilization rate, and a coating process can cover all the substrates on the electrode device 20. The substrate 600 is coated with a film, thereby realizing a large-area coating, thereby realizing a large-scale preparation of thin films.

It is worth mentioning that the radio frequency power supply 32 and the pulse power supply 31 jointly provide a voltage to act on the gas in the chamber 101, wherein the low power radio frequency discharge provided by the radio frequency power supply 32 maintains the chamber 101 Plasma environment, and suppress the arc discharge phenomenon in the high-voltage discharge process (because arc discharge is a form of discharge that is further enhanced in glow discharge, the instantaneous current can reach tens or even hundreds of amperes or more. These high currents pass through the substrate The surface of 600 will damage the substrate 600. Therefore, in order to ensure the safety of the substrate 600, the arc discharge phenomenon needs to be suppressed during the coating process). At the same time, the pulse power source 31 increases the energy of the positive ions when they reach the surface of the substrate 600 to prepare the dense and transparent film.

It should be pointed out that the power supply unit 30 in this preferred embodiment is composed of the radio frequency power supply 32 and the pulse power supply 31 to meet the coating requirements. In an optional case, according to different coating requirements, the power supply unit 30 may also be implemented as only one of the radio frequency power supply 32 or the pulse power supply 31, which can also meet the coating requirements. Those skilled in the art should understand that the power supply unit 30 can also be implemented as a microwave power supply or other power supplies to meet the coating requirements, which is not limited here.

It is worth mentioning that the RF voltage power and power supply time of the RF power supply 32 can be adjusted and preset according to the coating requirements for different substrates 600, wherein the RF voltage power of the RF power supply 32 is preferably 10 Correspondingly, the pulse bias voltage, pulse frequency, duty cycle and power supply time provided by the pulse power supply 31 can be adjusted and preset, wherein the pulse power supply 31 provides the pulse bias voltage from -100V to- 3000V, pulse frequency of 20-300KHz, duty cycle of 10%-80%, there is no limitation here.

Since the magnitude of the negative bias voltage provided by the pulse power supply 31 is directly related to the ionization rate of the gas in the chamber 101 and the migration ability of positive ions to the surface of the substrate 600, the negative bias of the pulse power supply 31 The higher the voltage, the higher the energy of the positive ions, and the higher the hardness of the prepared film. However, it should be noted that the higher the energy, the higher the bombardment energy of the positive ions on the surface of the substrate 600. On a microscopic scale, bombardment pits will be generated on the surface of the substrate 600 and will accelerate at the same time. The temperature of the surface of the substrate 600 increases, so the negative voltage of the pulse power source 31 should not be too high to prevent the surface temperature of the substrate 600 from excessively increasing and damaging the substrate 600. In addition, the higher the pulse frequency of the pulse power source 31 is, the continuous accumulation of charges on the surface of the insulating part of the substrate 600 can be avoided, thereby achieving suppression of the large arc phenomenon and increasing the deposition thickness limit of the thin film.

As shown in FIG. 2A, in this embodiment, the electrode device 20 further includes a main body 21 and at least one insulating member 22, wherein the main body 21 is disposed in the cavity 101 of the cavity 10, The insulating member 22 is arranged between the main body 21 and the cavity 10 to provide insulation. The main body 21 includes the electrode element 211 and at least one support 212, wherein the electrode element 211 is supported on the support 212, wherein the support 212 is detachably mounted on the cavity 10 In the chamber 101, the insulating member 22 is provided between the support member 212 and the wall of the cavity 10, and the insulating member 22 is provided between the first electrode element 2111 and the The second electrode elements 2112 are insulated or non-conductive.

The insulating member 22 is made of insulating material. Preferably, the insulating member 22 is made of polytetrafluoroethylene material. Optionally, the insulating member 22 is detachably mounted on the main body 21, wherein the insulating member 22 and the main body 21 can be placed in the chamber 101 together, or removed from the chamber 101. Was taken out. Optionally, the insulating member 22 is detachably installed on the inner wall of the chamber 101, wherein the supporting member 212 of the main body 21 is placed in the chamber 101 and the insulating member 22 is exactly located The support 212 of the main body 21 and the cavity 101 are insulated from each other.

Further, each of the first electrode elements 2111 and each of the second electrode elements 2112 are alternately arranged to form a multilayer structure, and the supporting space 201 is formed between each adjacent layer of the electrode elements 211, wherein The side surface of the supporting space 201 communicates with the cavity 101 so that the substrate 600 can be layered on the upper side of the electrode element 211 of each layer. Preferably, the upper surface of the electrode element 211 is flat, so that the electrode element 211 provides a plane space for supporting the substrate 600. Of course, the upper surface of the electrode element 211 can also be implemented as a surface matched and installed with the substrate 600, which is not limited here. Each of the first electrode elements 2111 is electrically connected to the first terminal 301 of the pulse power source 31, and each of the second electrode elements 2112 is electrically connected to the second terminal 302 of the pulse power source 31, Wherein, the first electrode element 2111 and the second electrode element 2112 are not electrically conductive.

As shown in FIG. 3A, preferably, the supporting member 212 includes a first supporting member 2121 and a second supporting member 2122, wherein each of the electrode elements 211 is supported in layers on the first supporting member 2121 and Between the second support members 2122, wherein the first support member 2121 is electrically connected to the first terminal 301 of the pulse power source 31 and electrically connected to each of the first electrode elements 2111, wherein the The second supporting member 2122 is electrically connected to the second terminal 302 of the pulse power source 31 and electrically connected to the second electrode element 2112.

It should be pointed out that, in order to increase the support strength of the support 212 supporting each of the electrode elements 211, the number of the support 212 is preferably implemented as four, including the first support 2121 and the The second supporting member 2122, of course, within a reasonable range, the supporting member 212 can also be implemented in other numbers or deformations of other shapes, which is not limited here.

Specifically, each of the first electrode elements 2111 and the first support member 2121 are electrically connected, wherein each of the second electrode elements 2112 and the first support member 2121 are insulated by the insulating member 22 Connection, wherein the first support 2121 has a first terminal 21211, wherein the first terminal 21211 is electrically connected to the first terminal 301, so that the first terminal 301 of the pulse power source 31 is only The electrical connection to the first support 2121 facilitates the electrical connection of all the first electrode elements 2111, thereby reducing the complexity of the circuit and saving costs. Each of the first electrode elements 2111 and the second support member 2122 are insulated and connected by the insulating member 22, wherein each of the second electrode elements 2112 and the second support member 2122 are electrically connected, wherein The second support 2122 has a second terminal 21221, wherein the second terminal 21221 is electrically connected to the second terminal 302, so that the second terminal 302 of the pulse power source 32 is only electrically connected The second supporting member 2122 facilitates the electrical connection of all the second electrode elements 2112, thereby saving circuits, reducing electromagnetic interference, and reducing manufacturing or maintenance costs.

In other words, one end of the first electrode element 2111 is electrically connected to the first support member 2121, such as welding or metal clamping, and the other end is connected to the second support member 2122 through the insulating member 22. Insulated connection between. Correspondingly, one end of the second electrode element 2112 is electrically connected to the second supporting member 2122, such as welding or metal clamping, and the other end passes through the insulating member 22 and the first supporting member 2121. Insulated connection between.

It can be understood that the electrode element 211, the first support member 2121, and the second support member 2122 are all supported by conductive materials, such as metal materials, wherein each of the first electrode elements 2111 and the first The support members 2121 are integrally and vertically connected, wherein each of the second electrode elements 2121 and the second support member 2122 are integrally and vertically connected, so that each of the first electrode elements 2111 and each of the second electrode elements 2112 Alternately, they are arranged in a multi-layer structure in parallel to form the multi-layer support space 201. Further, by adjusting the distance between the first electrode element 2111 and the second electrode element 2112, the height of the support 201 can be preset to provide a reasonable coating height.

Optionally, the supporting member 212 can be implemented as a non-conductive material, which has a certain supporting strength, such as a plastic material. Each of the first electrode elements 2111 and each of the second electrode elements 2112 are alternately arranged at a certain interval without contacting each other, wherein each of the first electrode elements 2111 is electrically connected to the pulse power supply 31. In the first terminal 301, each of the second electrode elements 2112 is electrically connected to the second terminal 302 of the pulse power source 31, so that the first electrode element 2111 and the second electrode element 2111 can also be The electrode switching between the electrode elements 2112 is not limited here.

Furthermore, the electrode element 211 of each layer has a set of through holes 202, wherein the through holes 202 are connected to the supporting spaces 201 of adjacent layers, so that the gas in the chamber 101 can pass through all the through holes 202. The through hole 202 diffuses to the supporting space 201 of the adjacent layer in the longitudinal direction, and at the same time, since the side surface of the supporting space 201 of each layer communicates with the chamber 101, the gas in the chamber 101 It can diffuse into the supporting space 201 of each layer in the lateral direction, so that the gas in the chamber 101 diffuses into the supporting space 201 of each layer as uniformly as possible, so that all the gas in the chamber 101 can be diffused into the supporting space 201 of each layer. The surface of the substrate 600 is coated with the film as uniformly as possible to achieve unified production.

It can be understood that a single electrode element 211 extends in a transverse direction, wherein a plurality of electrode elements 211 are arranged to form an up-and-down layered structure, so that a plurality of the supporting spaces 201 are arranged up and down in layers. Optionally, a single electrode element 211 extends in the longitudinal direction, wherein a plurality of electrode elements 211 may be implemented to be arranged to form a longitudinally layered structure, so that the plurality of supporting spaces 201 are arranged longitudinally and layered. Optionally, a plurality of the electrode elements 211 may be implemented to extend radially outward from a central axis to form the support space 201 extending in the radial direction between the adjacent electrode elements 211, of which many The electrode elements 211 can be uniformly rotated along the central axis to improve the uniformity of the coating, for example, a uniform thin film is prepared on the keyboard film.

It is worth mentioning that the distance between the adjacent electrode elements 211 can be preset, so that the height of the supporting space 201 can be preset. Optionally, the electrode element 211 can be movable up and down along the support 212 to adjust the distance between the adjacent electrode elements 211 adaptively.

It is worth mentioning that the aperture, shape, mesh number, arrangement and quantity of the through holes 202 of each electrode element 211 can be preset to make the gas in the chamber 101 It spreads through the through hole 202 as uniformly as possible in the support space 201 of the adjacent layer in the longitudinal direction. For example, the shape of the through hole 202 may be a circle, a square or a strip hole, etc., which is not limited herein.

As shown in FIG. 2A, preferably, the electrode element 211 is implemented as an integral metal plate structure, wherein the electrode element 211 has a certain thickness to ensure that it is not easy to bend or damage during use, or to support a certain weight. In the case of the substrate 600, the electrode element 211 is not prone to be significantly bent or deformed, so as to ensure the reliability of the coating process.

As shown in FIG. 2B, optionally, the electrode element 211 is implemented as a plurality of metal strip grid-like structures arranged in parallel or staggered horizontally and vertically, wherein the strip-like structures have a certain width and hardness, and the adjacent ones The through holes 202 are formed between the strip-shaped structures, that is, when the strip-shaped structures are arranged in parallel, the through-holes 202 are strip-shaped holes, or the strip-shaped structures are arranged in a crisscross pattern such as an orthogonal arrangement. At this time, the through hole 202 is a square hole.

As shown in FIG. 2C, optionally, the electrode element 211 is implemented as a metal mesh structure, wherein the mesh structure has a certain hardness to be able to support a certain weight of the substrate 600, wherein the mesh The mesh of the shape structure is the through hole 202.

Those skilled in the art should understand that, on the premise of supporting each of the electrode elements 211, the number, shape, and arrangement positions of the supporting members 212 can be preset. For example, the support 212 is implemented as a columnar structure connected to the center of the electrode element 211 of each layer.

As shown in FIGS. 3B and 5, in the first modified implementation of this embodiment, the main body 21 of the electrode device 20 further includes a set of support layers 213, wherein each of the support layers 213 is multi-layered Are arranged in the supporting member 212 and define the supporting space 201 between the adjacent supporting layers 213, wherein each of the electrode elements 211 is sequentially supported on each of the supporting layers 213, that is, the first The electrode elements 2111 and the second electrode elements 2112 are alternately arranged on the support layer 213 of adjacent layers. Further, the support layer 213 may be made of a non-conductive material, such as a plastic material, etc., wherein the support 212 may be made of a non-conductive material, so that the first electrode element 2111 and the second electrode The elements 2112 do not contact and cannot conduct electricity, so that the electrode device 20 does not need the insulating member 22. It can be understood that the electrode element 211 can be detachably installed on the support layer 213 for easy maintenance or replacement. It should be pointed out that each of the first electrode elements 2111 can be connected to the first terminal 301 of the power supply unit 30 through a wire, and each of the second electrode elements 2112 can be connected to the power supply unit through a wire. The second terminal 302 of the unit 30.

Further, this embodiment also provides an installation method of the electrode device 20 of the coating equipment 100, which includes the following steps:

a. Alternately arrange each of the electrode elements 211 in the chamber 101 of the cavity 10 of the coating equipment 100, wherein the supporting space 201 is defined between adjacent electrode elements 211 for supporting all The substrate 600; and

b. Electrically connect the adjacent electrode elements 211 to the positive and negative electrodes of the power supply unit 30 to form an electric field, wherein the adjacent electrode elements 211 are not conductive, so that the coating equipment 100 can A thin film is prepared on the surface of the substrate 600 by chemical vapor deposition.

Wherein, the step b includes electrically connecting the first electrode element 2111 to the first terminal 301 of the power supply unit 30, and electrically connecting the second electrode element 2112 to the second terminal of the power supply unit 30 302, wherein the first terminal 301 and the second terminal 302 are mutually positive and negative, wherein the first electrode element 2111 and the second electrode element 2112 are alternately arranged and non-conductive.

Wherein, the step b includes supporting each of the electrode elements 211 on the support 212 in layers, wherein the support 212 is used to support the cavity 101 of the cavity 10.

Wherein, the step b includes that the first terminal 301 is electrically connected to each of the first electrode elements 2111 through a first support 2121 of the support 212, and the second terminal 302 is electrically connected to each of the first electrode elements 2111. A second support member 2122 of the support member 212 is electrically connected to each of the second electrode elements 2112, wherein the first support member 2121 and the second electrode element 2112 are insulated and connected, and the second support member 2122 and the first electrode element 2111 are insulated and connected.

Wherein, the step b includes: installing a group of supporting layers 213 on the supporting member 212 in layers to form the supporting space 201, and forming the supporting space 201 between adjacent supporting layers 213, wherein The first electrode element 2111 and the second electrode element 2112 are alternately supported on the support layer 213 of an adjacent layer, wherein the support layer 213 is made of a non-conductive material.

Wherein, the electrode element 211 has a set of through holes 202 to communicate with the adjacent supporting spaces 201.

In this embodiment, the electrode device 20 can be freely placed or taken out of the chamber 101 to facilitate the operation of the staff, that is, the staff can place the substrate 600 on the electrode device in advance in the outside world. 20 of the supporting space 201, and then put the electrode device 20 into the chamber 101, so that the staff can take out the electrode device 20 for cleaning or replacement of the electrode device 20, or for convenient Clean the inner wall of the chamber 101. In addition, the electrode device 20 can be reused, that is, in the second coating, the electrode device 20 can be used to install another batch of the substrate 600 again, and then be placed in the chamber 101 Re-coating is realized inside, which is conducive to mass production.

Optionally, the electrode device 20 can be fixedly arranged in the chamber 101, that is, before and after coating, the electrode device 20 is always located in the chamber 101 without being taken out.

As shown in FIG. 4, further, the cavity 10 has at least one suction port 11, at least one gas inlet 12, and at least one feed port 13 communicating with the cavity 101, wherein the gas suction port 11 is used for The gas in the chamber 101 is extracted from the access pipe, wherein the gas inlet 12 is used for the access pipe to pass inert gases such as nitrogen, carbon tetrafluoride, helium, argon, etc. into the chamber 101 Of the plasma source gas, wherein the feed port 13 is used to connect a pipeline to pass hydrogen gas into the chamber 101 and pass reaction raw materials such as hydrocarbon gas into the chamber 101, the hydrocarbon gas For example, one or more combinations of gaseous raw materials such as alkanes, alkenes, and alkynes with 1-6 carbon atoms, or one of gaseous raw materials vaporized from liquid hydrocarbon raw materials with higher carbon atoms, etc. Or multiple combinations. It is understandable that each of the pipelines can be provided with an on-off valve to respectively control the on-off of the pipeline to realize the circulation and closing of the gas, or the on-off valve can control the flow rate of the gas filled into the chamber 101 The size is not limited here.

Further, the feed port 13 can also be used to fill the chamber 101 with auxiliary gases such as N, Si, F, B and other doping elements. For example, the reaction raw material for the doped Si element includes, but is not limited to, silicon-containing organic compounds, including one of organic linear siloxanes, cyclosiloxanes, alkoxysilanes, and unsaturated carbon-carbon double bond-containing siloxanes. Kind or multiple combinations. Further, hexamethyldisiloxane, tetramethyldivinyldisiloxane, hexamethylcyclotrisiloxane, and octamethylcyclotetrasiloxane are selected. For example, the reaction raw materials of the doped N element include, but are not limited to, N ₂ and nitrogen-containing hydrocarbons. For example, the raw materials for the doped F element include but are not limited to fluorocarbon compounds, and are further selected from carbon tetrafluoride and tetrafluoroethylene. For example, the raw material for the doped B element includes, but is not limited to, borane with a boiling point lower than 300° C. under normal pressure, and further, pentaborane and hexaborane are selected.

In this embodiment, the suction port 11 is provided in the middle of the chamber 101 of the cavity 10, wherein the gas inlet 12 and the feed port 13 are both provided in the cavity. The position of the side wall of the chamber 101 of the body 10 so that gas is filled from the gas inlet 12 and the feed port 13 of the side wall of the chamber 101, and from the chamber 101 The suction port 11 in the middle of the position is drawn out to ensure that the filled gas diffuses to the surface of each substrate 600 as evenly as possible, so that the surface of each substrate 600 is evenly plated as much as possible The above film.

Optionally, the suction port 11 may be provided in the middle of the bottom or top wall of the chamber 101, and the suction port 11 may also be connected to a suction port provided in the middle of the chamber 101. The air column, that is, the suction column is located in the middle of the electrode device 20, wherein the air inlet 12 and the feed inlet 13 may be located on the same side wall of the chamber 101, or may be located on the same side wall of the chamber 101 respectively. Different side walls of the chamber 101. Optionally, the suction port 11 may be provided at a side wall position of the chamber 101, and the air intake port 12 and the feed port 13 may be provided at the middle position of the chamber 101 or at the same position as the side wall of the chamber 101. The position of the side wall opposite to the suction port 11 is not limited here.

It is understandable that the relative positions of the suction port 11, the gas inlet 12, and the feed port 13 in the chamber 101 can be preset according to actual needs, so as to meet the needs of mass production as much as possible. The substrate 600 needs to be uniformly coated to ensure uniform specifications.

Further, in the step S20, the step of preparing the thin film by the method of chemical vapor deposition by the coating equipment 100 includes:

S01. The electrode device 20 is located in the chamber 101, wherein the substrate 600 is supported in the support space 201 of the electrode device 20, and a negative pressure operation such as vacuuming is performed on the chamber 101, During film coating, the air in the chamber 101 is drawn out by the vacuum pump through the air extraction port 11 to make the chamber 101 close to a vacuum state, so as to minimize the residual air in the chamber 101 affecting the coating quality , Until the air pressure in the chamber 101 reaches the preset air pressure value.

S02. Enter the stage of performing surface etching treatment or surface cleaning and activation on the surface of the substrate 600, specifically, gas is continuously filled into the chamber 101 through the air inlet 12 for the substrate 600 Perform surface etching treatment, preferably, argon or helium is introduced into the chamber 101 through the gas inlet 12, wherein the flow rate of the gas is approximately 10 sccm to 1000 sccm, preferably 80 or 100 sccm . At the same time, a vacuum pump is used to continuously extract a certain amount of gas in the chamber 101 and maintain the air pressure in the chamber 101 within 0.01-100 Pa, preferably 8 Pa or 10 Pa or 100 Pa. At the same time, the pulse power source 31 of the power supply unit 30 provides a pulse voltage to act on the gas in the chamber 101 to clean and activate the surface of the substrate 600, so as to achieve the surface of the substrate 600. Etching treatment. Preferably, the pulse power supply 31 of the power supply unit 30 provides a high-voltage pulse bias voltage of -100V to -5000V, a duty ratio of 1% to 90%, and a power supply time within 1-60 minutes (the power supply time is step S02 The time for cleaning and activating the surface of the substrate 600), preferably, the pulse power supply 31 of the power supply unit 30 provides a voltage of -3000V, a duty cycle of 20% or 30%, and a frequency of 10kHz or 40kHz, power supply time is 5, 10, 20, or 30min, etc.

It is worth mentioning that in the process of cleaning and activating the surface of the substrate 600, the gas flow rate charged into the chamber 101 through the air inlet 12 can be preset within a reasonable range. In order to prevent the phenomenon that the flow rate of the gas filled into the chamber 101 is too high or too low, which will affect the surface ionization effect of the substrate 600. The pulse voltage provided by the pulse power supply 31 of the power supply unit 30 is preset within a reasonable range to prevent the voltage from being too low to achieve a good cleaning and activation effect on the surface of the substrate 600, or the voltage If it is too high, there is a risk of damaging the substrate 600. The power supply time of the pulse power supply 31 of the power supply unit 30 can be preset within a reasonable range to prevent the power supply time from being too short to achieve a good cleaning and activation effect on the surface of the substrate 600, or the power supply time Too long will prolong the cycle of the entire coating process and cause unnecessary waste.

S03. Coating on the surface of the substrate 600, specifically, filling the chamber 101 with the gas through the air inlet 12, and filling the chamber 101 through the inlet 13 Hydrogen is introduced, and the chamber 101 is filled with reaction materials such as hydrocarbon gas or vaporized hydrocarbon gas, or the chamber 101 is further filled with gas containing dopant materials and the like. Preferably, the gas flow rate charged into the chamber 101 is 10-200 sccm, the gas flow rate of hydrogen gas is 0-100 sccm, and the gas flow rate of the reaction raw materials such as hydrocarbon gas is 50-1000 sccm or the gas doped with element reaction raw materials The flow rate is 0-100sccm. At the same time, a certain amount of gas in the chamber 101 is continuously extracted by a vacuum pump and the air pressure in the chamber 101 is maintained within 0.01-100 Pa, preferably 8 Pa or 10 Pa or 100 Pa. At the same time, the power supply unit 30 is used to provide a radio frequency electric field and/or a high-voltage pulse bias assisted plasma chemical vapor deposition method to prepare the film on the surface of the substrate 600, wherein the power supply unit 30 provides the power of the radio frequency voltage It is 10-800W, or the pulse bias voltage is -100V to -5000V, the duty cycle is 10%-80%, and the power supply time of the power supply unit 30 is 5-300 minutes, that is, in step S03, The time for coating the substrate 600 is approximately 5-300 minutes.

In the step S03, specifically, the power supply unit 30 can provide radio frequency and/or high voltage pulse bias to act on the gas in the chamber 101, wherein the radio frequency power supply 32 of the power supply unit 30 is provided by The radio frequency electric field discharges the gas in the chamber 101 so that the chamber 101 is in a plasma environment and the reactive gas material is in a high-energy state. The pulse power source 31 generates a strong electric field in the chamber 101 by providing a strong voltage in a high-voltage pulse bias, so that the active particles in a high-energy state are accelerated by the strong electric field to deposit on the surface of the substrate 600, And form an amorphous carbon network structure. The pulse power supply 31 provides the empty voltage or the low voltage state in the high-voltage pulse bias, so that the amorphous carbon network structure deposited on the surface of the substrate 600 relaxes freely, and the carbon under the action of thermodynamics The structure is transformed into a stable phase-curved graphene sheet structure, and is embedded in the amorphous carbon network, thereby forming the thin film on the surface of the substrate 600.

It should be understood that the ratio of the gas flow rate of the nitrogen gas or helium gas, the hydrogen gas, the reaction raw material gas, or the doping element reaction raw material gas that is filled into the chamber 101 determines the flow rate of the gas. The atomic ratio in the film, thereby affecting the quality of the film. By presetting parameters such as the power or voltage of the radio frequency and/or pulse bias provided by the power supply unit 30, the temperature, ionization rate, or deposition rate and other related parameters during the coating process can be adjusted, or through preset The power supply time of the power supply unit 30 is set to prevent the phenomenon that the film is thinner and the hardness is poor due to the coating time is too short, or the film is thicker due to the coating time is too long, which affects transparency, etc. occur.

That is to say, in the step S03, it is possible not to fill the chamber 101 with hydrogen at different flow rates, or to fill the chamber 101 with a certain amount of hydrogen to prepare DLC with different hydrogen content. film. It is understandable that the DLC film with higher hydrogen content has higher lubricity and transparency than the DLC film with lower hydrogen content, and in the step S03, a certain amount is filled into the chamber 101 A large amount of hydrogen is conducive to the formation of SP3 bonds during the coating process, which can increase the hardness of the film to a certain extent, but as the hydrogen content further increases, the hardness of the film will gradually decrease. Therefore, according to different coatings As required, in the step S03, a preset amount of hydrogen gas can be selectively filled into the chamber 101 through the feed port 13.

Correspondingly, in the step S03, a certain amount of designated doping element reaction raw materials can be selectively filled into the chamber 101 through the feed port 13. For example, the chamber 101 is filled with fluorine-containing reaction raw materials, so that the prepared film has a higher hydrophobic effect and transparency, but when the fluorine atom content exceeds 20%, the hardness of the film Will be significantly reduced (less than 4H on the Mohs hardness).

S04. After the coating time in the step S03 is over, the chamber 101 is filled with air to keep the chamber 101 in a normal pressure state. That is, the chamber 101 is returned to a normal pressure state by filling a certain amount of air into the chamber 101, so that the staff can open the chamber 101 and take out the substrate 600, so far the coating process ends. In the entire coating process, the coating equipment 100 has better process controllability in the process of preparing a thin film, which is conducive to rapid preparation of a target thin film.

Optionally, the pulse power supply 31 can also be implemented as a symmetrical bidirectional pulse power supply, that is, the positive pressure and the negative pressure provided by the pulse power supply 31 have the same magnitude. Or the pulse power source 31 is implemented as an asymmetric bidirectional pulse power source, wherein the magnitude of the negative pressure value provided by the pulse power source 31 is greater than the magnitude of the positive pressure value to provide the quality of the film, which is not limited here. In other words, the cavity 10 is not grounded, and the cavity 10 can have a positive pressure value.

It should be pointed out that the shape and structure of the electrode device 20 are not limited. Within the volume of the chamber 101, the shape or number of the electrode device 20 can be adjusted adaptively. Preferably, the size of the cavity 10 is 800 mm×638 mm×740 mm, and the material is stainless steel. Further, the cavity 10 has an openable and closable sealed door for a worker to open or seal the cavity 101 to place or take out the substrate 600 and the cavity 101.

For example, the parameters of the coating equipment 100 during the coating process are as follows: Air intake: Ar/N ₂ /H ₂ /CH ₄ : 50-500 sccm, C ₂ H ₂ /O ₂ : 10-200 sccm; before coating (I.e. the step S02 stage) the vacuum degree of the chamber 101: less than 2×10 ^-3 Pa; during coating (i.e. the step S03 stage) the vacuum degree of the coating chamber 101: 0.1-20 Pa; coating voltage : -300～-3500V, duty ratio: 5～100%, frequency: 20～360KHz; coating time: 0.1～5hrs, the thickness of the film is less than 50 nanometers, this is only an example, and the present invention is not limited .

Furthermore, this embodiment also provides the thin film, wherein the thin film is prepared by the coating equipment 100 and formed on the surface of the substrate 600. It is understandable that the thin film may be one or more thin films formed on the surface of the substrate 600 by the coating equipment 100 after one or more coatings.

The second preferred embodiment of the present invention provides a coating equipment, wherein the coating equipment can be used to prepare various film layers, and can chemically deposit on the surface of at least one workpiece to be coated by using plasma chemical deposition (PECVD) technology To form a film layer.

Compared with other existing deposition processes, the plasma enhanced chemical vapor deposition (PECVD) process has many advantages: (1) Dry deposition does not require the use of organic solvents; (2) The etching effect of plasma on the surface of the substrate makes the The deposited film has good adhesion to the substrate; (3) The coating can be uniformly deposited on the surface of the irregular substrate, and the gas permeability is extremely strong; (4) The coating can be designed well, compared to the liquid phase method with micron-level control accuracy , The chemical vapor method can control the coating thickness at the nanometer scale; (5) the coating structure design is easy, the chemical vapor method uses plasma activation, and the composite coating of different materials does not need to design a specific initiator to initiate. A variety of raw materials can be compounded together through the control of input energy; (6) The compactness is good, and the chemical vapor deposition method often activates multiple active sites during the plasma initiation process, similar to a molecule in a solution reaction There are multiple functional groups, and the molecular chains form a cross-linked structure through multiple functional groups; (7) As a coating treatment technology, its universality is excellent, and the range of coating objects and raw materials used for coating are very wide. wide.

Referring to FIGS. 6A to 7, the coating equipment 91 includes the reaction chamber 910, a gas supply part 920, an air extraction device 930 and a support 940.

The reaction cavity 910 has a reaction cavity 9100, wherein the reaction cavity 9100 can be kept relatively airtight, so that the reaction cavity 9100 can be maintained at a desired vacuum degree.

The gas supply part 920 is used to supply gas toward the reaction chamber 9100 of the reaction chamber body 910.

The gas can be a reactive gas. Based on the requirements of the film layer, different reactive gases can be selected. For example, when the film layer is a DLC film layer, the reactive gas can be C _x H _y , where x is an integer of 1-10 , Y is an integer of 1-20. The reaction gas may be a single gas or a mixed gas. Optionally, the reaction gas may be gaseous methane, ethane, propane, butane, ethylene, acetylene, propylene or propyne under normal pressure, or may be vapor formed by evaporation under reduced pressure or heating. In other words, the raw materials that are liquid at room temperature may also be provided to the reaction chamber 9100 in a gaseous manner through the gas supply part 920.

The gas can be a plasma source gas, and can be, but is not limited to, inert gas, nitrogen, and fluorocarbon. Among them, the inert gas is exemplified but not limited to helium or argon. The fluorocarbon can be but not limited to four. Carbon fluoride. The plasma source gas can be a single gas, or a mixture of two or more gases.

The gas can be an auxiliary gas, and the auxiliary gas can cooperate with the reaction gas to form a film layer to give the film layer some expected characteristics, such as the strength of the film layer, and the flexibility of the film layer. The auxiliary gas can be a non-hydrocarbon gas, such as nitrogen, hydrogen, fluorocarbon gas, and so on. The auxiliary gas can be supplied to the reaction chamber 910 at the same time as the reaction gas, or can be passed into the reaction chamber 910 according to requirements. The addition of auxiliary gas can adjust the ratio of the elements in the film, the ratio of carbon-hydrogen bonds, carbon-nitrogen bonds, and nitrogen-hydrogen bonds, thereby changing the properties of the film.

The suction device 930 is connected to the reaction chamber body 910 so as to be able to communicate with the reaction chamber 9100. The air extraction device 930 can control the pressure in the reaction chamber 9100. The pressure in the reaction chamber 9100 will affect the efficiency of the entire coating process and the final result. During the coating process, with the introduction of the raw material gas and the generation of plasma, the pressure of the entire reaction chamber 9100 changes continuously in one stage. The pumping power of the pumping device 930 and the gas The adjustment of the gas supply power of the supply part 920 can keep the pressure of the reaction chamber 9100 in an expected stable state.

That is to say, not only can the pressure in the reaction chamber 9100 be reduced in a manner of pumping through the pumping device 930, but also the pressure in the reaction chamber 9100 can be increased in a manner of supplying gas through the gas supply part 920. The pressure in the reaction chamber 9100. For example, after the coating process is completed, air or other gases can be supplied through the gas supply part 920, so that the pressure in the reaction chamber 9100 and the pressure outside the reaction chamber 910 are equal, so that the reaction The workpiece to be coated in the cavity 9100 can be taken out. According to at least one embodiment of the present invention, the flow rate of the reactant gas supplied from the gas supply range of the gas supply part 920 is controlled to be 10 sccm-200 sccm. According to at least one embodiment of the present invention, the flow rate of the ion source gas of the gas supply part 920 is controlled to be 50 sccm to 500 sccm.

The bracket 940 is located in the reaction cavity 9100 of the reaction cavity 910. The support 940 can support the coated workpiece to hold the workpiece to be coated in the reaction chamber 9100 of the reaction chamber 910. A plurality of the workpieces to be coated may be supported on the support 940.

Further, the coating equipment 91 includes a discharge device 950, wherein the discharge device 950 can provide a radio frequency electric field and/or a pulsed electric field, and a plasma gas source can be ionized to generate plasma under the radio frequency electric field. Under the pulsed electric field, the plasma can move toward the workpiece to be coated to deposit on the surface of the workpiece to be coated.

The discharge device 950 can provide a desired electric field to generate plasma in the reaction chamber of the reaction chamber, and the plasma can activate part of the gas to form a film on the surface of the workpiece to be coated.

Further, in this embodiment, the support of the coating equipment 91 is a multi-layer support 940 to accommodate a plurality of the workpieces to be coated, thereby facilitating the improvement of the space utilization of the reaction chamber 9100.

Part of the bracket 940 is made of a conductive material, and at least a part of the bracket 940 can be conductively connected to the discharge device 950 for use as an electrode of the discharge device 950. It is worth mentioning that while the support 940 can support the workpiece to be coated, it can be used as an electrode of the discharge device 950, so that no additional reaction in the coating device 91 is required. Electrodes are arranged in the cavity 9100.

In other embodiments of the present invention, the electrodes of the discharge device 950 may be arranged around the support 940 to form an electric field around the workpiece to be coated placed on the support 940.

It is worth noting that, in this embodiment, the workpiece to be coated is supported on the support 940 in a horizontal manner. The support 940 includes a plurality of support members 941, wherein the support members 941 are held in the reaction chamber 9100 at intervals. The workpiece to be coated is supported by the support 941 of the bracket 940. Optionally, the support 941 is located in a horizontal position.

The cathode in the electrode of the discharge device 950 may be arranged below the workpiece to be coated, so that when the gas is ionized into plasma in the electric field, the positive ions in the plasma can move toward the cathode, thereby accelerating toward the The work piece to be coated is operated to facilitate the bonding strength between the film layer and the work piece to be coated.

However, a problem that arises is that, because the surface of the workpiece to be coated is generally formed of poorly conductive materials such as plastics, glass, etc., it is easy to accumulate charges on the surface of the workpiece to be coated, so when the plasma is When the positive ions move toward the cathode under the action of an electric field, the positive ions accumulate near the cathode, such as the surface of the workpiece to be coated, thereby hindering subsequent positive ions, affecting the entire coating process, and making the rate of the coating process decline.

In this embodiment, the discharge device 950 includes a pulse power supply, wherein the pulse power supply is implemented as an asymmetric bipolar pulse power supply 951. The asymmetric bipolar pulsed power supply 951 is compared with the ordinary pulsed DC power supply, a reverse low level is added on the basis of the original pulse period, so that the accumulated positive charge can be knocked out, such as It is said that the positive charge accumulated on the surface of the workpiece to be coated can maintain the stability of the coating process in this way.

Specifically, the bracket 940 includes a plurality of the supporting members 941 and at least one connecting member 942, wherein the connecting member 942 is supported by the supporting member 941 to keep the supporting member 941 in the reaction chamber 9100 Different height positions.

In this embodiment, the connecting member 942 is implemented as a column, and the column stands on the inner wall of the reaction chamber 910. Of course, those skilled in the art should understand that the connecting member 942 can be implemented as other connecting devices, such as a chain, which can hold the supporting member 941 in the reaction chamber 9100 in a hanging manner.

In other embodiments of the present invention, the supporting member 941 is detachably mounted on the reaction chamber 910, and the reaction chamber 910 may be provided with a boss or a groove to support the supporting member 941 in the reaction chamber 9100. The supporting member 941 may be drawn out from the reaction chamber 910.

The number of the pillars may be two, three, four or more. In this embodiment, the number of the pillars is four.

Each of the support members 941 of the support 940 may be respectively conductively connected to the asymmetric bipolar pulse power source 951 to serve as a cathode of the asymmetric bipolar pulse power source 951. It is worth noting that the support 941 of each layer can be used to place the workpiece to be coated.

The gas supply part 920 supplies gas, and then the gas is ionized in the electric field environment generated by the asymmetric bipolar pulse power source 951 to generate plasma, and the positive ions in the plasma move toward the support 941. At this time, the support member 941 is applied with a negative bias voltage to serve as the cathode of the asymmetric bipolar pulse power supply 951. Part of the positive charge is accumulated on the negatively biased support member 941, and part of the positive charge is accumulated on the surface of the workpiece to be coated, so that a positive electric field is gradually formed near the workpiece to be coated, and the positive electric field prevents other positive charges from continuing to move toward the target. The workpiece to be coated advances, thereby hindering the coating process. Therefore, the entire coating process may stop, or as the coating time increases, the increase in the film thickness per unit time becomes slower and gradually stops. This problem will be especially obvious when plating thicker layers.

The asymmetric bipolar pulse power supply 951 can output a reverse low level within a preset period of time to break the positive charge accumulated on the surface of the workpiece to be coated, thereby causing the formation of The positive electric field is weakened, so that the positive charge can continue to move toward the workpiece to be coated under the action of the electric field, and the entire coating process can continue, even at a stable rate, for example, refer to FIG. 6A to FIG. Shown in 6B.

The asymmetric bipolar pulse power supply 951 can work in a variety of ways, for example, it works in a positive or negative DC mode for a part of a certain period of time, for example, a part of a certain period of time is It works by continuously outputting positive pulses. For example, it works by continuously outputting negative pulses for a part of a certain period of time. For example, it works by continuously outputting asymmetric positive and negative pulses for a part of a certain period of time. It works in pulse mode, for example, it works by continuously outputting asymmetric bipolar positive and negative pulses for a part of a certain period of time, for example, continuously outputting asymmetric bipolar positive and negative pulses for a part of a certain period of time It works in a pulsed manner.

The asymmetric bipolar pulse power supply 951 can continuously output negative-going pulses at a certain time within a period of time, and then can continuously output positive-going pulses, and positive-going pulses and negative-going pulses during the next part of the time. Asymmetric to output asymmetric positive and negative pulses. The asymmetric bipolar pulse power supply 951 can continuously output positive pulses at a certain time within a period of time, and then can be connected to output negative pulses in the next part of the time, and the value of the negative pulse is greater than the positive pulse. To output asymmetrical positive and negative pulses.

It is worth noting that the duty cycle of the positive and negative pulses of the asymmetric bipolar pulse power supply 951 can be adjusted respectively to significantly reduce the arcing operation. When the forward pulse works, it can neutralize the charge accumulation on the insulating layer. The asymmetric bipolar pulse power supply 951 is particularly suitable for coating dielectric films and high-quality films.

The AC input of the asymmetric bipolar pulse power supply 951 can be single-phase 220VAC or three-phase 380VAC. The power factor range of the asymmetric bipolar pulse power supply 951 may be greater than or equal to 0.99 at low power, and greater than or equal to 0.92 at high power. The efficiency of the asymmetric bipolar pulse power supply 951 may be greater than or equal to 0.86. The output waveform of the asymmetric bipolar pulse power supply 951 can be, but is not limited to, positive and negative direct current, unipolar positive pulse, unipolar negative pulse, asymmetric bipolar positive and negative pulse or symmetrical Bipolar positive and negative pulses. The output current range of the asymmetric bipolar pulse power supply 951 can be 0-9400A, and can be divided into 10 specifications: 1KW, 2KW, 5KW, 10KW, 20KW, 30KW, 50KW, 70KW, 100KW, 200KW. The range of the output voltage of the asymmetric bipolar pulse power supply 951 may be ±25V˜±600V, and the range of the output voltage thereof is continuously adjustable. The output frequency range of the asymmetric bipolar pulse power supply 951 can be 1KHz-40KHz. The pulse duty ratio of the asymmetric bipolar pulse power supply 951 can range from 5% to 90%, and the pulse duty ratio is independent and continuously adjustable for positive and negative pulses. The working mode of the asymmetric bipolar pulse power supply 951 can be any of constant current, constant voltage or constant power.

When the coating equipment 91 uses the asymmetric bipolar pulse power supply 951 as the discharge device 950, a coating with excellent performance can be obtained, and the coating time can also be adapted to industrial applications.

For example, referring to the following table, some relevant data of the coating equipment 91 according to the present invention is clarified.

The difference between Example 1 and Comparative Example 1 is only the difference in the discharge device 950. In Embodiment 1, the discharge device 950 is the asymmetric bipolar pulse power supply 951. In Comparative Example 1, the discharge device 950 is a pulsed DC bias power supply, and other conditions are controlled to be the same.

In Example 1 and Comparative Example 1, C ₂ H ₂ +Ar was used as the raw material gas, and the reaction chamber 9100 pressure was 25 mTorr.

By comparison, it can be found that in the same coating time, Example 1 can form a thicker film layer compared to Comparative Example 1, and the hardness of the film layer is higher. In other words, it takes more time to form the same film layer under the conditions of Comparative Example 1 as under the conditions of Example 1.

Similarly, the difference between Example 2 and Comparative Example 2 lies in the difference of the discharge device 950. In Embodiment 2, the discharge device 950 is the asymmetric bipolar pulse power supply 951. In the comparative example, the discharge device 950 is a pulse DC bias power supply, and other conditions are controlled to be the same.

In Example 2 and Comparative Example 2, CH ₄ +Ar was used as the raw material gas, and the reaction chamber 9100 pressure was 25 mTorr.

By comparison, it can be found that in the same coating time, Example 2 can form a thicker film layer compared to Comparative Example 2, and the hardness of the film layer is higher. In other words, it takes more time to form the same film layer under the conditions of Comparative Example 2 as under the conditions of Example 2.

In other words, the coating equipment 91 using the asymmetric bipolar pulse power supply 951 can complete coating in a short time and form a film with excellent performance on the surface of the workpiece to be coated.

Further, in this embodiment, each of the support members 941 of the bracket 940 of the coating equipment 91 is respectively conductively connected to the connecting member 942, such as one connecting member 942, Then, the connection with the asymmetric bipolar pulse power source 951 located outside the reaction chamber 9100 is realized through the connecting piece 942. In this way, there is no need to perform complicated wiring for each support 941 of the bracket 940 so that each support 941 is directly and conductively connected to the asymmetric bipolar pulse power supply 951 .

The bracket 940 further includes at least one insulating member 943, wherein the insulating member 943 is disposed at the bottom end of the connecting member 942. When the connecting member 942 is supported on the reaction chamber 910, the insulating member 943 insulates the connecting member 942 and the reaction chamber 910. The reaction chamber 910 may be grounded or at least a part of the reaction chamber 910 may be made of conductive material to be conductively connected to the asymmetric bipolar pulse power source 951.

For example, the entire reaction chamber 910 may be made of stainless steel, and the reaction chamber 910 is conductively connected to the asymmetric bipolar pulse power source 951 to serve as the asymmetric bipolar The anode of the sex pulse power supply 951.

Further, the bracket 940 has a plurality of vents 9410, wherein the vents 9410 may be formed in the support 941 and penetrate the support 941. The vent 9410 is used to allow gas to flow on the upper and lower sides of the support 941 to facilitate gas diffusion in the reaction chamber 910.

It is worth noting that, in this embodiment, the support 940 supports the workpiece to be coated in a horizontal manner. In other embodiments of the present invention, the support 940 may support the workpiece to be coated in a vertical manner or in other manners.

Further, in this embodiment, a certain interval is maintained between the adjacent support members 941 to reserve enough space. Optionally, the interval between adjacent support members 941 may be equal. According to at least one embodiment of the present invention, the distance between adjacent support members 941 may be 10-200 mm.

Further, the discharge device 950 may further include a radio frequency power supply 952, wherein the radio frequency power supply 952 can provide a radio frequency electric field to the reaction cavity 9100 of the reaction cavity 910. The gas in the coating device 91 reacts in an electric field jointly or separately formed by the asymmetric bipolar pulse power supply 951 and the radio frequency power supply 952 to form a film on the surface of the workpiece to be coated. The radio frequency power supply 952 can be directly loaded on the electrode plate to generate the radio frequency electric field. Or, the radio frequency power supply 952 is arranged outside the cavity as an inductively coupled plasma power supply to provide an alternating magnetic field.

The workpiece to be coated on the support 941 of the support 940 can be coated under the action of the radio frequency electric field and/or the pulsed electric field, and the radio frequency electric field and the pulsed electric field can work together. Description.

The radio frequency power supply 952 discharges the gas provided by the gas supply part 920 so that the entire reaction chamber 9100 is in a plasma environment, and the reaction gas is in a high-energy state. The pulse power source 951 generates a strong electric field during the discharge process, and the strong electric field is located near the workpiece to be coated, so that the active ions in the plasma environment are accelerated by the action of the strong electric field to deposit on the surface of the substrate.

When the film layer is a DLC film layer, the reactive gas is deposited on the surface of the workpiece to be coated under the action of a strong electric field to form an amorphous carbon network structure. When the pulse power source 951 is not discharged, the film layer deposited on the workpiece to be coated is used to freely relax the amorphous carbon network structure. Under the action of thermodynamics, the carbon structure changes to the stable phase---bending graphene sheet structure Transformed and buried in the amorphous carbon network to form a transparent graphene-like structure.

When the positive charge on the surface of the workpiece to be coated has accumulated to a certain extent, the asymmetric bipolar pulse power supply 951 can provide a reverse low level to impact the charges attached to the surface of the workpiece to be coated, thereby making The coating process can be carried out in an orderly manner. In other words, the asymmetric bipolar pulse power supply 951 can provide an inverted low level intermittently.

Alternatively, during the coating process, the asymmetric bipolar pulse power supply 951 can continuously provide a reverse low level to reduce the accumulation of positive charges on the surface of the workpiece to be coated.

Further, the coating equipment 91 may also include a feeding device 960 and a control device 970, wherein the feeding device 960 is communicably connected to the reaction chamber 910, and the air extraction device 930, The feeding device 960 and the discharging device 950 are controllably connected to the control device 970, respectively. The control device 970 is used to control the feed flow rate, ratio, pressure, discharge size, discharge frequency and other parameters in the reaction chamber 910 to make the entire coating process controllable.

Referring to FIG. 8, another embodiment of the bracket 940 according to the above-mentioned preferred embodiment of the present invention is illustrated.

In this embodiment, at least part of the support member 941 is conductively connected to the asymmetric bipolar pulse power supply 951 to serve as the cathode of the asymmetric bipolar pulse power supply 951, and at least part of the support The element 941 is conductively connected to the asymmetric bipolar pulse power source 951 to serve as the anode of the asymmetric bipolar pulse power source 951.

For example, the support 941 of the first and third layers can be used as the anode of the asymmetric bipolar pulse power source 951, and the support 941 of the second and fourth layers can be used as the asymmetric The cathode of the bipolar pulse power supply 951.

The workpiece to be coated can be placed on the support 941 of the second and fourth layers. Under the action of the negative bias applied to the support 941 of the second and fourth layers, the positive charge can be The supporting member 941 accelerates toward the second layer and the fourth layer to facilitate the strength of the film layer formed on the surface of the workpiece to be coated.

Each of the supporting members 941 is supported by the connecting member 942 respectively. Optionally, the supporting member 941 as the cathode of the asymmetric bipolar pulse power supply 951 is conductively connected to the same connecting member 942 as the anode of the asymmetric bipolar pulse power supply 951 The supporting member 941 is conductively connected to the other connecting member 942.

In this way, through the conduction of the asymmetric bipolar pulse power source 951 and the connecting member 942, the conduction of the plurality of support members 941 and the asymmetric bipolar pulse power source 951 can be realized.

Further, optionally, the support 941 as the cathode and the anode of the asymmetric bipolar pulse power source 951 are alternately arranged. For example, if the support 941 of one layer is used as the cathode, the support 941 of the upper layer and the next layer are respectively used as the anode.

The distance between each pair of the supports 940, which serve as the cathode and the anode of the asymmetric bipolar pulse power source 951, may be the same, so as to provide the same coating space for the workpiece to be coated , In order to facilitate the coating uniformity of the final workpiece to be coated.

According to other embodiments of the present invention, at least part of the supporting member 941 is conductively connected to the asymmetric bipolar pulse power supply 951 to serve as a cathode of the asymmetric bipolar pulse power supply 951, at least part of it The support 941 is grounded. Optionally, the supporting member 941 as the asymmetric bipolar pulse power source 951 and the grounded supporting member 941 are alternately arranged. For example, the supporting member 941 of one layer is used as a cathode, and the supporting member 941 of the upper layer and the lower layer are grounded respectively.

According to other embodiments of the present invention, at least part of the support member 941 is conductively connected to the asymmetric bipolar pulse power supply 951 to serve as a cathode of the asymmetric bipolar pulse power supply 951, and at least part of it The supporting member 941 is conductively connected to the radio frequency power supply 952 to serve as the anode of the radio frequency power supply 952. Optionally, the support 941 as the cathode of the asymmetric bipolar pulse power supply 951 and the support 941 as the anode of the radio frequency power supply 952 are alternately arranged. For example, the support 941 of one layer is used as the cathode of the asymmetric bipolar pulse power supply 951, and the support 941 of the upper layer and the next layer are used as the anode of the radio frequency power supply 952, respectively.

Referring to FIG. 9, another embodiment of the support 940 of the coating device 91 according to the present invention is illustrated.

In this embodiment, one of the support members 941 of the bracket 940 is used as the gas supply part 920. That is, the support 941 may be used for transmission to supply gas.

The supporting member 941 is formed with at least one gas transmission channel 94100, wherein the vent 9410 is connected to the gas transmission channel 94100.

Specifically, the supporting member 941 may include a supporting top plate and a supporting bottom plate, wherein the gas transmission channel 94100 is formed between the supporting top plate and the supporting bottom plate. The vent 9410 may be provided on the supporting bottom plate.

For example, when the workpiece to be coated is placed on the supporting member 941 of the second layer, the supporting member 941 of the first layer is arranged to face the supporting member 941 of the second layer. That is, the workpiece to be coated facing the supporting member 941 on the second layer. The gas can move toward the workpiece to be coated after leaving the vent 9410 of the support 941 of the first layer.

The supporting member 941 of each layer can be used as the gas supply part 920, thereby facilitating the uniformity of gas diffusion in the support 940, and facilitating the uniformity of the coating on the surface of the workpiece to be coated.

Referring to FIG. 10, another embodiment of the support 940 of the coating device 91 according to the present invention is illustrated.

In this embodiment, the bracket 940 includes the support member 941 of multiple layers, and the support member 941 includes a first support portion 9411 and a second support portion 9412, wherein the first support portion 9411 and The second supporting portions 9412 are insulated from each other, and the first supporting portion 9411 is supported by the second supporting portion 9412.

The workpiece to be coated may be placed on the first supporting portion 9411 of the supporting member 941.

The first support portion 9411 is conductively connected to the asymmetric bipolar pulse power source 951 as a cathode, and the second support portion 9412 is used as the gas supply portion 920 for gas distribution.

The vent 9410 is formed in the second supporting portion 9412 and faces the supporting member 941 of the next layer. When the workpiece to be coated is placed on the first support portion 9411 of the support 941, above the workpiece to be coated is the second support portion 9412 of another layer of the support 941.

The second support portion 9412 can form the gas transmission channel 94100, and the gas transmission channel 94100 is connected to the vent 9410. When the gas leaves the second supporting portion 9412 from the vent 9410, under the action of the radio frequency electric field and/or the pulsed electric field, at least part of the gas can be ionized to form plasma, and then the plasma The positive ions can accelerate toward the first support portion 9411 located below, so as to deposit on the surface of the workpiece to be coated that is supported on the first support portion 9411 of the support 941.

Further, the second support portion 9412 may be conductively connected to the asymmetric bipolar pulse power source 951, so that the gas can be ionized at the position of the second support portion 9412, and then the gas can be ionized at the position of the second support portion 9412. The movement of the workpiece to be coated is accelerated under the action of the first supporting portion 9411.

In this way, in addition to the supporting member 941 of the first layer, the supporting member 941 of each layer can be placed with the workpiece to be coated, so as to facilitate the increase of the space utilization rate of the bracket 940.

Further, the first supporting portion 9411 of each supporting member 941 may be conductively connected to one of the connecting members 942 so as to be easily connected to the outside. The second supporting portion 9412 may be conductively connected to the other connecting member 942 so as to be easily connected to the outside. At the same time, the first support portion 9411 and the second support portion 9412 of each support member 941 are insulated from each other.

According to other embodiments of the present invention, the second support portion 9412 may be conductively connected to the radio frequency power supply 952 or directly grounded.

According to another aspect of the present invention, the present invention provides a working method of the coating equipment 91, wherein the working method includes the following steps:

At least one workpiece to be coated is placed on the support 941 in the reaction chamber 9100 to be coated, wherein the support 941 is conductively connected to the asymmetric bipolar pulse power supply 951 As a cathode; and

The asymmetric bipolar pulse power supply 951 operates with a positive pulse to neutralize the positive charges accumulated on the surface of the workpiece to be coated.

According to other embodiments of the present invention, the asymmetric bipolar pulse power source 951 ionizes the gas to form plasma to enhance the chemical reaction in the reaction chamber 9100.

According to other embodiments of the present invention, the radio frequency power supply 952 discharges in the reaction chamber 9100.

According to other embodiments of the present invention, the support 941 of one layer serves as the anode discharge of the asymmetric bipolar pulse power source 951, and the support 941 of the next layer serves as the asymmetric bipolar pulse The cathode of the power supply 951 is discharged.

Those skilled in the art should understand that the above description and the embodiments of the present invention shown in the accompanying drawings are only examples and do not limit the present invention. The purpose of the present invention has been completely and effectively achieved. The functions and structural principles of the present invention have been shown and explained in the embodiments. Without departing from the principles, the implementation of the present invention may have any deformation or modification.

Claims

A coating equipment, characterized in that it includes:

A cavity with a cavity; and

An electrode device, wherein the electrode device includes a set of electrode elements and a power supply unit, wherein the power supply unit has a first terminal and a second terminal that are mutually positive and negative, wherein the electrode element is disposed at all In the cavity of the cavity, a support space is defined between the adjacent electrode elements for placing the substrate, wherein each of the electrode elements is alternately connected to the first terminal and the second terminal , Wherein the chamber is adapted to be filled with reaction raw materials, and the power supply unit is used to provide voltage so that the adjacent electrode elements are mutually positive and negative to form an electric field for the coating equipment to perform chemical vapor deposition The method prepares the film on the surface of the substrate.
4. The coating equipment according to claim 1, wherein the power supply unit comprises a pulse power supply, wherein the pulse power supply is implemented as a bidirectional pulse power supply or a unidirectional negative bias pulse power supply.
The coating equipment according to claim 1, wherein each of the electrode elements is divided into a set of first electrode elements and a set of second electrode elements, wherein the first electrode elements and the second electrode elements are arranged alternately, wherein The first electrode element is electrically connected to the first terminal, and the second electrode element is electrically connected to the second terminal.
4. The coating equipment according to claim 3, wherein the electrode device further comprises at least one support, wherein each of the electrode elements is mounted on the support in layers, wherein the support is used to support the coating In the cavity of a cavity of the device, the adjacent first electrode element and the second electrode element are not conductive.
4. The coating equipment according to claim 4, wherein the supporting member includes a first supporting member and a second supporting member, wherein each of the electrode elements is supported in layers on the first supporting member and the second supporting member. Between the support members, wherein the first terminal is electrically connected to each of the first electrode elements through the first support member, and the second terminal is electrically connected to each of the second electrode elements through the second support member Electrical connection, wherein the first support member and the second electrode element are insulated and connected, and the second support member and the first electrode element are insulated and connected.
5. The coating equipment according to claim 5, wherein the electrode device further comprises a set of insulating members, wherein the insulating member is disposed between the first support member and the second electrode element, wherein the insulating member Is provided between the second support and the first electrode element, wherein the insulating member is provided between the support and the cavity of the coating equipment.
4. The coating equipment according to claim 4, wherein the electrode device further comprises a set of supporting layers, wherein the supporting layers are mounted on the supporting member in layers, and the adjacent supporting layers form the The supporting space, wherein the first electrode element and the second electrode element are alternately supported on the supporting layer of an adjacent layer, wherein the supporting layer is made of a non-conductive material.
4. The coating equipment according to claim 1, wherein a plurality of the electrode elements are arranged in a layered structure, wherein the supporting space is formed between the electrode elements of adjacent layers to support the substrate.
4. The coating equipment according to claim 1, wherein a plurality of the electrode elements extend radially with a central axis, wherein the supporting space extending in the radial direction is formed between two adjacent electrode elements.
The coating equipment according to claim 1, wherein the electrode element is implemented as one or a combination selected from the group consisting of a metal plate structure, a metal grid structure, and a metal mesh structure.
The coating equipment according to any one of claims 1 to 10, wherein the electrode element has a set of through holes to communicate with the adjacent supporting spaces.
11. The coating equipment of claim 11, wherein the coating equipment prepares a diamond-like film on the surface of the substrate by chemical vapor deposition.
A coating method for coating equipment is characterized in that it comprises the following steps:

A. A first terminal and a second terminal of a power supply unit, which are mutually positive and negative, are alternately connected to a group of electrode elements of an electrode device, wherein the electrode elements are arranged in a cavity of the coating equipment The chamber of, wherein a support space is defined between the adjacent electrode elements for supporting the substrate, and the power supply unit is used to provide voltage so that the adjacent electrode elements are mutually positive and negative to form an electric field; with

B. Prepare a thin film on the surface of the substrate by means of chemical vapor deposition.
The coating method of the coating equipment according to claim 13, wherein the power supply unit includes a pulse power supply for providing pulse voltage, wherein the pulse power supply is implemented as a bidirectional pulse power supply or a unidirectional negative bias pulse power supply.
The coating method of the coating equipment according to claim 13, wherein the adjacent electrode elements alternate positive and negative electrodes to alternately change the electric field direction of the electric field.
A method for installing an electrode device of a coating equipment is characterized in that it comprises the following steps:

a. Alternately arrange a group of electrode elements in a cavity of a cavity of the coating equipment, wherein a support space is defined between adjacent electrode elements for supporting the substrate; and

b. Electrically connect the adjacent electrode elements to the positive and negative electrodes of a power supply unit to form an electric field, wherein the adjacent electrode elements do not conduct electricity, so that the coating equipment can be deposited by chemical vapor deposition. A film is prepared on the surface of the substrate.
The method for mounting an electrode device of a coating equipment according to claim 16, wherein the step b includes electrically connecting a first electrode element to the first terminal of the power supply unit, and electrically connecting a second electrode element to the power supply unit. In the second terminal of the power supply unit, the first terminal and the second terminal are mutually positive and negative, and the first electrode element and the second electrode element are alternately arranged and non-conductive.
17. The method for installing the electrode device of the coating equipment according to claim 17, wherein the step b includes supporting each of the electrode elements on at least one supporting member in layers, wherein the supporting member is used to support the cavity The chamber.
The method for installing the electrode device of the coating equipment according to claim 18, wherein the step b includes that the first terminal is electrically connected to each of the first electrode elements through a first support member of the support member, The second terminal is electrically connected to each of the second electrode elements through a second support member of the second support member, wherein the first support member and the second electrode member are insulated and connected, wherein The second support member and the first electrode element are insulated and connected.
The method for installing the electrode device of the coating equipment according to claim 17, wherein the step b includes installing a group of supporting layers on the supporting member in layers to form the supporting space, and the adjacent supporting layers The supporting space is formed therebetween, wherein the first electrode element and the second electrode element are alternately supported on the supporting layer of an adjacent layer, and the supporting layer is made of a non-conductive material.
The method for mounting the electrode device of the coating equipment according to any one of claims 16 to 20, wherein the electrode element has a set of through holes to communicate with the adjacent supporting spaces.
An electrode device used in a coating equipment to prepare a thin film on the surface of a substrate, wherein the electrode device includes:

A group of electrode elements, wherein a supporting space is defined between adjacent electrode elements for placing the substrate; and

A power supply unit, wherein the power supply unit has a first terminal and a second terminal that are mutually positive and negative, wherein each of the electrode elements is alternately connected to the first terminal and the second terminal, wherein the The power supply unit is used to provide voltage so that the adjacent electrode elements are mutually positive and negative to form an electric field, so that the coating equipment can prepare a thin film on the surface of the substrate by chemical vapor deposition.
The electrode device according to claim 22, wherein the power supply unit is a pulse power supply.
The electrode device according to claim 23, wherein the pulse power source is implemented as a bidirectional pulse power source, wherein the value of the positive voltage value of the bidirectional pulse power source is less than or equal to the value of the negative voltage value.
The electrode device according to claim 23, wherein the pulse power supply is implemented as a unidirectional negative bias pulse power supply, wherein the positive electrode of the pulse power supply is a null potential.
The electrode device according to any one of claims 22 to 25, wherein each of the electrode elements is divided into a set of first electrode elements and a set of second electrode elements, wherein the first electrode elements and the second electrode elements alternate Arrangement, wherein the first electrode element is electrically connected to the first terminal, and wherein the second electrode element is electrically connected to the second terminal.
The electrode device according to claim 26, wherein the electrode device further comprises at least one support member, wherein each of the electrode elements is mounted on the support member in layers, wherein the support member is used to support the coating film In the cavity of a cavity of the device, the adjacent first electrode element and the second electrode element are not conductive.
The electrode device according to claim 27, wherein the supporting member includes a first supporting member and a second supporting member, and wherein each of the electrode elements is supported on the first supporting member and the second supporting member in layers. Between the support members, wherein the first terminal is electrically connected to each of the first electrode elements through the first support member, and the second terminal is electrically connected to each of the second electrode elements through the second support member Electrical connection, wherein the first support member and the second electrode element are insulated and connected, and the second support member and the first electrode element are insulated and connected.
The electrode device according to claim 28, wherein the electrode device further comprises a set of insulating members, wherein the insulating member is disposed between the first support member and the second electrode member, wherein the insulating member Is provided between the second support and the first electrode element, wherein the insulating member is provided between the support and the cavity of the coating equipment.
The electrode device according to claim 27, wherein the electrode device further comprises a set of supporting layers, wherein the supporting layers are mounted on the supporting member in layers, and the adjacent supporting layers form the The supporting space, wherein the first electrode element and the second electrode element are alternately supported on the supporting layer of an adjacent layer, wherein the supporting layer is made of a non-conductive material.
22. The electrode device according to claim 22, wherein a plurality of the electrode elements are arranged in a layered structure, wherein the supporting spaces are formed between the electrode elements in adjacent layers to support the substrate.
22. The electrode device according to claim 22, wherein a plurality of the electrode elements extend radially with a central axis, wherein the supporting space extending in the radial direction is formed between two adjacent electrode elements.
The electrode device according to claim 22, wherein the electrode element has a set of through holes to communicate with the adjacent supporting spaces.
The electrode device according to claim 33, wherein the electrode element is implemented as one or a combination selected from the group consisting of a metal plate structure, a metal grid structure, and a metal mesh structure.
A coating equipment for coating at least one workpiece to be coated, characterized in that it includes:

A reaction chamber, wherein the reaction chamber has a reaction chamber, and the reaction chamber is used for accommodating the workpiece to be coated;

A gas supply part, wherein the gas supply part is used to supply gas to the reaction chamber;

An air extraction device, wherein the air extraction device is connected to the reaction chamber body so as to be able to communicate with the reaction chamber, and the air extraction device is used to control the vacuum degree of the reaction chamber; and

An asymmetric bipolar pulse power supply, wherein the asymmetric bipolar pulse power supply is used to provide asymmetric positive and negative pulses to the reaction chamber, when the asymmetric bipolar pulse power is connected , Generating plasma in the reaction chamber to enhance the chemical reaction of the gas to form a film layer on the surface of the coated workpiece.
The coating equipment according to claim 35, further comprising a bracket, wherein at least part of the bracket is made of conductive material, and the asymmetric bipolar pulse power supply is conductively connected to the bracket.
The coating equipment according to claim 36, wherein the support includes a multi-layer support member, wherein the support members are held at different height positions of the reaction chamber at intervals, wherein at least one of the support members is conductive The ground is connected to the asymmetric bipolar pulse power supply as the cathode of the asymmetric bipolar pulse power supply.
37. The coating equipment according to claim 37, wherein at least one of the support members is conductively connected to the asymmetric bipolar pulse power source to serve as an anode of the asymmetric bipolar pulse power source.
The coating apparatus according to claim 38, wherein the support members as cathodes and anodes are alternately arranged.
The coating equipment according to claim 37, wherein the support further comprises at least one connecting member, and the supporting member is held at different height positions of the reaction chamber by the connecting member.
The coating equipment according to claim 37, further comprising a radio frequency power supply, wherein at least one of the support members is conductively connected to the radio frequency power supply.
The coating equipment according to any one of claims 35 to 41, wherein the working mode of the asymmetric bipolar pulse power supply is to work alternately with positive and negative direct current within a working period of time.
The coating equipment according to any one of claims 35 to 41, wherein the asymmetric bipolar pulse power supply provides asymmetric positive and negative pulses during a working time period, and during the working time period The working mode for a part of the predetermined time is continuous output of positive pulses, continuous output of negative pulses, continuous output of asymmetric positive and negative pulses or continuous output of asymmetric bipolar positive and negative pulses.
The coating equipment according to claim 42, wherein the working mode of the asymmetric bipolar pulse power supply during a part of the working time period is unipolar positive pulse, unipolar negative pulse, asymmetric Bipolar positive and negative pulses or symmetrical bipolar positive and negative pulses.
The coating equipment according to any one of claims 35 to 41, wherein the pulse duty ratio of the asymmetric bipolar pulse power supply ranges from 5 to 90%, and the pulse duty ratio of the asymmetric bipolar pulse power supply The ratio is set to be independently and continuously adjustable.
A working method of coating equipment is characterized in that it includes the following steps:

An asymmetric bipolar pulse power source operates with a positive pulse to neutralize the charge accumulated on the surface of at least one workpiece to be coated, wherein the workpiece to be coated is located in a reaction chamber of a coating device.
The working method according to claim 46, wherein in the above method, the cathode of the asymmetric bipolar pulse power supply is located below the workpiece to be coated.
The working method according to claim 47, wherein in the above method, the workpiece to be coated is supported on a support, wherein at least part of the support serves as a cathode of the asymmetric bipolar pulse power supply.
The working method according to claim 46, further comprising the following steps:

The asymmetric bipolar pulsed power source ionizes the gas to form a plasma to enhance the chemical reaction.
The working method according to claim 46, further comprising the following steps:

A radio frequency power supply discharges in the reaction chamber.
The working method according to any one of claims 46 to 50, wherein the working mode of the asymmetric bipolar pulsed power supply is alternating positive and negative direct current during a working period of time.
The working method according to any one of claims 46 to 50, wherein the pulse duty ratio of the asymmetric bipolar pulse power supply ranges from 5 to 90%, and the pulse duty ratio of the asymmetric bipolar pulse power supply The ratio is set to be independently and continuously adjustable.
The working method according to any one of claims 46 to 50, wherein the output frequency range of the asymmetric bipolar pulse power supply is 1KHz-40KHz.