CN211947215U

CN211947215U - Electrode assembly

Info

Publication number: CN211947215U
Application number: CN201922151788.7U
Authority: CN
Inventors: 宗坚
Original assignee: Jiangsu Favored Nanotechnology Co Ltd
Current assignee: Jiangsu Favored Nanotechnology Co Ltd
Priority date: 2019-12-04
Filing date: 2019-12-04
Publication date: 2020-11-17
Anticipated expiration: 2029-12-04

Abstract

The utility model provides a coating equipment and electrode thereof for at substrate surface preparation film, wherein coating equipment includes a cavity, an at least support and a power supply unit, wherein the cavity has a cavity, wherein the cavity is suitable for being let in the gaseous raw materials who is used for preparing this film, wherein the support be set up in the cavity, wherein the support is used for supporting this substrate, wherein the cavity is as anodal, wherein the support is as the negative pole, makes gas in the cavity orients directionally under the voltage effect on the support the direction deposit of substrate is finally in the surface of substrate forms the film, so that the substrate can maximize quantity arrange in the support, and satisfy all the coating film demand of substrate.

Description

Electrode assembly

Technical Field

The utility model relates to a coating film field further relates to DLC coating film equipment and electrode assembly thereof.

Background

Plasma chemical vapor deposition is a commonly used coating technique, and a coating is deposited on the surface of a material by means of a chemical reaction of gaseous substances containing coating constituent atoms driven by an electric field by means of plasma. The coating can endow materials such as PCB circuit boards, electronic devices, mobile phones, keyboards, computers and the like with good physical and chemical durability; the strength of the surface of the material can be enhanced, the performances of scratch resistance, water resistance, wear resistance, corrosion resistance, heat dissipation and the like of the surface of the material are improved, and meanwhile, the surface of the material has certain low friction.

With the continuous update of electronic devices, taking a smart phone as an example, the smart phone has a structure and hardware devices that are continuously changed while the level of intelligence is continuously improved. The current 5G mobile phones, especially full screen or full screen curved mobile phones, flexible screen mobile phones and the like, not only require high light transmission, high hardness and wear resistance, but also require anti-falling performance. Diamond-Like Carbon (DLC) is a metastable material that has recently emerged and is produced by bonding in the form of sp3 and sp2 bonds, and is a short-range ordered, long-range disordered thin film. It has both the excellent characteristics of diamond and graphite. In the aspect of mechanical property, the DLC film has higher hardness and wear resistance; in the aspect of optical performance, the light transmission is good, and the anti-reflection function is realized; also has good thermal conductivity and biocompatibility. The DLC film plating on the surface of the material is one of the measures meeting the market demand.

Plasma enhanced chemical vapor deposition vacuum equipment is the basis for realizing the process, and the key for perfecting the process is to reasonably design the equipment and parts thereof. The existing vacuum coating equipment generally adopts two electrode plates of a positive electrode and a negative electrode which are oppositely arranged to discharge so as to realize the preparation of a film, so that the space utilization rate of a cavity of the coating equipment is limited, the coating efficiency is reduced, and all base materials cannot be arranged in a maximized manner; in addition, the unreasonable arrangement of the electrodes can cause the nonuniformity of electric field distribution and air field distribution, and the deposition rate on the surface of the base material is different, thereby influencing the difference of the coating thickness.

For example, patent No. CN206916216U discloses a diamond-like thin film deposition apparatus, which includes a pulsed dc bias power supply system and a deposition casing with a vacuum cavity, the deposition casing is grounded and is provided with a vacuum pumping port and a door for loading and unloading the goods, the diamond-like thin film deposition apparatus further includes a constant current ionization device, the constant current ionization device includes an ionization power supply disposed outside the deposition casing and two ionization electrodes disposed in the vacuum cavity, and the ionization electrodes are electrically connected with the ionization power supply respectively. A working rotating frame is arranged in the vacuum cavity, the positive electrode of a power supply of the pulse direct-current bias power supply system is grounded, the negative electrode of the power supply is connected with the working rotating frame, and a circular hanging frame used for hanging workpieces is arranged on the working rotating frame. From the equipment structure, the working rotating frame is complex in design, the cavity capacity is small, and large-batch film coating cannot be carried out.

For another example, patent No. 207845774U discloses a diamond-like carbon film deposition apparatus with low hydrogen content, which includes a vacuum chamber, a circular workpiece rotating frame system and a pulsed dc bias power supply system, wherein a planar target is respectively disposed in the directions of 45 °, 135 °, 225 ° and 315 ° of the vacuum chamber, the center of the vacuum chamber is circular, a circular workpiece rotating frame is disposed in the vacuum chamber, and a constant current ionization device is disposed inside and outside the workpiece rotating frame. Therefore, the influence of the shape structure and the installation position of the working rotating frame on the coating quality is large, the installation requirement is high, and the yield is low.

In summary, in order to improve the space utilization rate and the coating efficiency of the chamber, and to plate a coating layer with uniform thickness on the surface of the largest number of substrates in the same batch, so as to achieve uniform production, it is necessary to design a coating apparatus and an electrode device thereof that meet the requirements and have simple structure, good applicability, and low cost.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a coating equipment and electrode assembly thereof, wherein coating equipment is used for preparing at least a film or rete at the substrate surface, wherein coating equipment satisfies mass production's demand.

Another object of the present invention is to provide a plating apparatus and an electrode assembly thereof, wherein the plating apparatus can satisfy the maximum quantity arrangement of the substrate, improve the space utilization of the plating apparatus, and satisfy all the plating demands of the substrate to realize mass production.

Another object of the present invention is to provide a plating apparatus and an electrode assembly thereof, wherein the plating apparatus includes a cavity and is disposed in at least one support in a cavity of the cavity, wherein the cavity is used as a positive electrode, wherein the support includes a plurality of electrode elements as negative electrodes, so that the gas in the cavity is oriented under the action of an electric field toward the support in the direction of the substrate is deposited and finally is disposed on the surface of the substrate to form the film, so that the substrate can be disposed in the support in a maximized amount, and all the plating requirements of the substrate are satisfied.

Another object of the present invention is to provide a plating apparatus and an electrode assembly thereof, wherein the chamber is grounded to be in a zero potential state.

Another object of the present invention is to provide a plating apparatus and an electrode assembly thereof, wherein the gas filled in the chamber can be uniformly diffused to the space where the support is located as much as possible, so that all the surfaces of the substrate are plated with the film uniformly as much as possible, thereby realizing uniform production.

Another object of the present invention is to provide a plating apparatus and an electrode assembly thereof, which have simple structure, good applicability and low cost.

According to an aspect of the utility model, the utility model provides an electrode device is applied to a coating equipment to at substrate surface preparation DLC film, this coating equipment includes the cavity of a ground connection, electrode device includes:

one or more electrode elements; and

and the electrode element is connected with a negative electrode of the power supply device.

In some embodiments, the power supply is a high voltage pulse power supply.

In some embodiments, the cavity is connected to a positive pole of the power supply device and grounded.

In some embodiments, the electrode element further serves as a support element for the substrate.

In some embodiments, the coating apparatus includes a support including a body including the electrode element and at least one leg, and at least one insulator disposed between the body and the chamber.

In some embodiments, the electrode element is connected to the leg, wherein an upper side of the electrode element forms the support space, wherein the leg is for supporting in the chamber, wherein the insulator is arranged between the leg and the chamber.

In some embodiments, the electrode elements are made of an electrically conductive material and are electrically connected to each other, wherein one of the electrode elements is electrically connected to the negative electrode of the power supply device.

In some embodiments, the electrode elements and the legs are both made of an electrically conductive material, and the legs are electrically connected to each of the electrode elements, wherein the legs are connected to the negative pole of the power supply device.

In some embodiments, a plurality of the electrode members are sequentially arranged in a layered structure, wherein an upper side of the electrode member of each layer forms the supporting space for supporting the substrate.

In some embodiments, a plurality of the electrode elements radially extend around the central axis, wherein the support space radially extends between two adjacent electrode elements.

In some embodiments, the electrode member has a set of through holes to communicate with the adjacent supporting spaces

Drawings

Fig. 1 is a schematic structural view of a coating apparatus according to a preferred embodiment of the present invention.

Fig. 2A is a schematic structural diagram of a bracket of a plate-shaped structure of the coating device according to the above preferred embodiment of the present invention.

Fig. 2B is a schematic structural diagram of the support of the strip structure of the coating device according to the above preferred embodiment of the present invention.

Fig. 2C is a schematic structural view of the support of the net structure of the coating device according to the above preferred embodiment of the present invention.

Fig. 3A is a block diagram of the coating apparatus according to the above preferred embodiment of the present invention.

Fig. 3B is a block diagram of another embodiment of the plating device according to the above preferred embodiment of the present invention.

Detailed Description

The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents and other technical solutions without departing from the spirit and scope of the invention.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in a generic and descriptive sense only and not for purposes of limitation, as the terms are used in the description to indicate that the referenced device or element must have the specified orientation, be constructed and operated in the specified orientation, and not for the purpose of limitation.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Fig. 1 to 3B show a coating apparatus 100 according to a preferred embodiment of the present invention, wherein the film is implemented as a diamond-like carbon film (DLC film), wherein the coating apparatus 100 comprises a chamber 10, at least one support 20 and a power supply device 30, wherein the chamber 10 has a sealable chamber 101, wherein the support 20 is disposed in the chamber 101, wherein the chamber 101 is adapted to be filled with a gas raw material, such as a plasma source gas of an inert gas, such as nitrogen, carbon tetrafluoride or helium, argon, etc., a reaction gas of hydrogen, hydrocarbon gas, etc., or an auxiliary gas of doping elements, such as N, Si, F, B, etc. The power supply device 30 is used for providing a radio frequency electric field and/or a pulse voltage to act on the gas in the chamber 101, wherein the chamber 10 has a positive terminal 110, wherein the support 20 is an electrode support and has a negative terminal 210, wherein the positive terminal 110 of the chamber 10 is connected to the positive electrode of the power supply device 30, wherein the negative terminal 210 of the support 20 is connected to the negative electrode of the power supply device 30, so that the coating apparatus 100 can prepare a thin film or a film layer on all surfaces of the substrate 600 placed on the support 20 by means of chemical vapor deposition. Namely, the chamber 10 serves as a positive electrode, the support 20 serves as a negative electrode, so that the gas in the chamber 101 is directionally deposited toward the substrate 600 on the support 20 under the action of the electric field, and finally the thin film is formed on the surface of the substrate 600, thereby satisfying the requirement that the maximum number of substrates 600 are arranged on the support 20 and all the coating requirements of the substrate 600 are met.

In this embodiment, the coating apparatus 100 employs a plasma chemical vapor deposition method to prepare the thin film or the film layer on the surface of the substrate 600. That is, the film is deposited and molded on the surface of the substrate 600, so as to improve the properties of the surface of the substrate 600, such as mechanical, optical or chemical properties, wherein the substrate 600 is not limited herein, such as a product to be coated with a preset shape structure, for example, a PCB, a mobile phone, an electronic device, an electronic product cover plate, an electronic product display screen, a mobile phone glass screen, a computer screen, a mobile phone rear cover, an electronic device housing, a keyboard film or other types of products to be coated. For example, the coating apparatus 100 can effectively solve the problems of the electronic product display screen that the electronic product display screen is not drop-resistant and wear-resistant and the surface strengthening cost is high by preparing the film on the electronic product display screen.

Further, the film coating apparatus 100 can prepare the films with different properties on the surfaces of different types or models of the substrates 600, that is, one film coating apparatus 100 can coat different types or models of the substrates 600, and the performance of the film 100 can be diversified, thereby improving compatibility and saving cost. In the present embodiment, the film is implemented as a diamond-like carbon film (DLC film), that is, the plating apparatus 100 exemplifies the preparation of the DLC film on the surface of the substrate 600. Optionally, the thin film includes one or more layers, thin films, or nano-film layers, etc. plated on the surface of the substrate 600. The utility model discloses in, support 20 is connected in a pulse power supply, promptly power supply unit 30 can implement for pulse power supply, makes through glow discharge effect gas ionization in the cavity 101, it is right simultaneously positive ion in the cavity 101 has the directional effect of pulling with higher speed, makes positive ion have the bombardment effect ground deposit with higher speed in the surface of substrate 600, thereby substrate 600 surface preparation fine and close high hardness the film.

As shown in fig. 3A, further, the power supply 30 may also include a radio frequency power source 31 and a pulse power source 32, which may cooperate, wherein the radio frequency power source 31 generates a radio frequency electric field in the chamber 101 of the chamber 10 by directly loading on the electrode plate to act on the gas in the chamber 101, and wherein the pulse power source 32 is connected to the support 20 for providing a high voltage pulse bias to act on the gas in the chamber 101. Specifically, during film coating, the rf power source 31 discharges the plasma source gas and the reactant source gas in the chamber 101 by providing an rf electric field, so that the chamber 101 is in a plasma environment and the reactant source gas is in a high-energy state. The pulse power supply 32 generates a strong electric field in the chamber 101 by supplying a strong voltage in a high-voltage pulse bias, so that the active particles (i.e., positive ions) in a high-energy state are directionally accelerated to deposit on the surface of the substrate 600 by the strong electric field and form an amorphous carbon network structure, and the pulse power supply 32 forms the thin film on the surface of the substrate 600 by supplying a null electric potential or a low-voltage state in the high-voltage pulse bias, so that the amorphous carbon network structure deposited on the surface of the substrate 600 is subjected to free relaxation, and the carbon structure is thermodynamically transformed to a stable phase-bent graphene sheet layer structure and embedded in the amorphous carbon network.

The rf power source 31 may also be a plasma matching power source, wherein the rf power source 31 is composed of an rf power source, an impedance matcher, and an impedance power meter, and the rf power source 31 is installed in the chamber 10 to provide an rf electric field to act on the gas in the chamber 101. The radio frequency power supply 31 preferably provides radio frequency power at 13.56 MHz.

Further, the rf voltage 31 is disposed outside the chamber 10, wherein the rf power source 31 forms the rf electric field in the chamber 101 of the chamber 10 by directly applying the rf voltage to an electrode plate disposed on the chamber 10, so as to act on the gas in the chamber 101, thereby satisfying the requirement of coating. Alternatively, the rf power source 31 may also be implemented to generate an alternating magnetic field in the chamber 101 through the inductive coupling effect of the coil, i.e. as an ICP, so as to ensure that the gas in the chamber 101 is ionized sufficiently and uniformly through the rapidly changing magnetic field, and the coating requirement of the coating apparatus 100 can also be met, without limitation.

Preferably, the pulse power source 32 is implemented as a unidirectional negative pulse power source, wherein the pulse power source 32 has a negative terminal 321 and a positive terminal 322, wherein the negative terminal 321 is electrically connected to the negative terminal 210 of the support 20 and provides a negative voltage, wherein the positive terminal 322 is electrically connected to the positive terminal 110 of the chamber 10 and is at a positive or zero potential, wherein the support 20 and the chamber 10 are both made of an electrically conductive material, such as a metal material, and wherein the support 20 is insulated from the chamber 10. That is, in the coating process, the entire support 20 is a negative electrode and has a negative pressure, the entire chamber 10 is grounded and is a positive electrode, and the support 20 and the chamber 10 are insulated from each other, so that the entire chamber 101 is in a strong electric field, and since the substrate 600 is placed on the support 20, active particles in a high energy state are accelerated to be deposited on the surface of the substrate 600 under the action of the strong electric field, thereby realizing coating.

It can be seen that, since the entire support 20 is a negative end, the support 20 can provide a space as large as possible for installing and arranging a large number of substrates 600, so that the space utilization rate is improved, and a coating process can be performed on all the substrates 600 on the support 20, so as to realize large-area coating, thereby realizing large-scale film preparation.

It is worth mentioning that the rf power source 31 and the pulse power source 32 together provide an electric field acting on the gas in the chamber 101, wherein the low power rf discharge provided by the rf power source 31 maintains the plasma environment in the chamber 101 and suppresses the arc discharge phenomenon during the high voltage discharge (since the arc discharge is a discharge form further enhanced by the glow discharge, the instantaneous current can reach tens or even hundreds of amperes, and the high current will pass through the surface of the substrate to damage the substrate, so that the suppression of the arc discharge phenomenon is required during the plating process in order to ensure the safety of the substrate 600). Meanwhile, the pulse power source 32 increases the energy of the positive ions reaching the surface of the substrate 600 to prepare the dense and transparent thin film.

It should be noted that, according to the coating requirements of different substrates, the rf voltage power and the power supply time of the rf power supply 31 can be adjusted and preset, wherein the rf voltage power of the rf power supply 31 is preferably 20-500W, and accordingly, the pulse bias voltage, the pulse frequency, the duty cycle and the power supply time provided by the pulse power supply 32 can be adjusted and preset, wherein the voltage of the pulse bias voltage provided by the pulse power supply 32 is-100V to-5000V, the pulse frequency is 20-360KHz, and the duty cycle is 5% -100%, which is not limited herein.

Since the magnitude of the negative bias provided by the pulse power supply 32 is directly related to the ionization rate of the gas in the chamber 101 and the mobility of the positive ions to the surface of the substrate 600, the higher the negative voltage of the pulse power supply 32 is, the higher the energy of the positive ions is, and thus the higher the hardness of the prepared thin film is. It should be noted that the higher the energy of bombardment of the positive ions on the surface of the base material 600, the higher the bombardment energy, the more micro-scale, bombardment pits are generated on the surface of the base material 600, and the temperature increase of the surface of the base material 600 is accelerated, so that the negative voltage of the pulse power source 32 is not too high to prevent the temperature of the surface of the base material 600 from being excessively increased to damage the base material 600. In addition, the higher the pulse frequency of the pulse power source 32 is, the more the electric charges continuously accumulate on the surface of the insulating portion of the substrate 600 can be prevented, thereby achieving suppression of the large arcing phenomenon and an increase in the deposition thickness limit of the thin film.

As shown in fig. 2A, in the present embodiment, the support 20 includes a main body 21 and at least one insulating member 22, wherein the negative terminal 210 is located in the main body 21, wherein the main body 21 is made of a conductive material such as a metal material, wherein the main body 21 is electrically connected to the negative terminal 321 of the pulse power source 32, wherein the main body 21 has at least one supporting space 201 for supporting and placing the substrate 600, wherein the main body 21 is detachably mounted in the chamber 101, and wherein the insulating member 22 is disposed between the main body 21 and the chamber 10 to insulate the main body 21 from the chamber 10. The cavity 10 is made of an electrically conductive material, such as a metallic material, wherein there is no electrically conductive contact between the cavity 10 and the body 21 to prevent electrical short circuits.

The insulator 22 is made of an insulating material, and preferably, the insulator 22 is made of a teflon material. Alternatively, the insulating member 22 is detachably mounted to the main body 21, wherein the insulating member 22 can be put into the chamber 101 together with the main body 21 or taken out from the chamber 101. Optionally, the insulation member 22 is detachably mounted on the inner wall of the chamber 101, wherein the main body 21 is disposed in the chamber 101 and the insulation member 22 is located between the main body 21 and the chamber 101 for insulation.

Preferably, the main body 21 comprises at least one electrode element 211 and at least one leg 212, wherein the electrode element 211 is connected to the leg 212, wherein an upper side of the electrode element 211 forms the supporting space 201, wherein the leg 212 is used for supporting the bottom wall of the chamber 101, wherein the insulating member 22 is disposed between the leg 212 and the bottom wall of the chamber 101.

As shown in fig. 3A, the negative terminal 210 is optionally located at the electrode elements 211, wherein the negative terminal 321 of the pulse power source 32 is electrically connected to the electrode elements 211, and wherein the electrode elements 211 are electrically connected to each other, so that all the electrode elements 211 are used as a negative electrode. As shown in fig. 3B, optionally, wherein the negative terminal 210 is located at the leg 212, the negative terminal 321 of the pulse power source 32 is electrically connected to the leg 212, wherein the leg 212 is electrically connected to all the electrode elements 211, so that all the electrode elements 211 are used as a negative electrode for meeting all the coating requirements of the substrate 600.

Further, as shown in fig. 2A, a plurality of the electrode elements 211 form a multi-layered structure, the electrode elements 211 of each adjacent layer form the supporting space 201 therebetween, wherein the side surface of the supporting space 201 communicates with the chamber 101, so that the substrate 600 can be layered on the upper side of the electrode elements 211 of each layer. Preferably, the upper surface of the electrode member 211 is planar, so that the electrode member 211 provides a planar space for supporting the substrate 600. Of course, the upper surface of the electrode member 211 may be implemented as a surface that is mounted to match the substrate 600, which is not limited herein. Since the electrode elements 211 of each layer are electrically connected to the negative terminal 321 of the pulse power source 32, the electrode elements 211 of each layer can be used as a negative electrode, so as to meet the requirement of coating the substrate 600 placed on the upper side of the electrode elements 211 of each layer, so that the substrate 600 can be arranged in a maximized number, and is suitable for mass production.

Further, the electrode elements 211 of each layer have a set of through holes 202, wherein the through holes 202 are communicated with the supporting spaces 201 of adjacent layers, so that the gas in the chamber 101 can diffuse into the supporting spaces 201 of adjacent layers through the through holes 202 along the longitudinal direction, and simultaneously, since the side surfaces of the supporting spaces 201 of each layer are communicated with the chamber 101, the gas in the chamber 101 can diffuse into the supporting spaces 201 of each layer along the transverse direction, so that the gas in the chamber 101 can diffuse into the supporting spaces 201 of each layer as uniformly as possible, so that all the surfaces of the substrate 600 can be coated with the film uniformly as possible, thereby realizing uniform production.

It will be appreciated that a single said electrode element 211 extends in a lateral direction, wherein a plurality of said electrode elements 211 are arranged to form an upper and lower layer structure, such that a plurality of said support spaces 201 are arranged in layers above and below. Alternatively, a single said electrode element 211 extends in a longitudinal direction, wherein a plurality of said electrode elements 211 may be implemented to be arranged to form a longitudinal stratiform structure, such that a plurality of said support spaces 201 are arranged longitudinally in layers. Alternatively, a plurality of the electrode members 211 may be implemented to extend radially outward from a central axis to form the supporting space 201 extending in a radial direction between the adjacent electrode members 211, wherein the plurality of the electrode members 211 can be uniformly rotated together along the central axis to improve the uniformity of the coating film, such as the preparation of a uniform thin film on a keypad film, etc.

It is worth mentioning that the spacing between adjacent electrode elements 211 can be preset, so that the height of the supporting space 201 can be preset. Optionally, the electrode elements 211 can be movable up and down along the legs 212 to adaptively adjust the spacing between adjacent electrode elements 211.

It is worth mentioning that the parameters of the aperture, shape, mesh number, arrangement and number of the through holes 202 of each electrode element 211 can be preset so that the gas in the chamber 101 can be diffused in the supporting space 201 of the adjacent layer in the longitudinal direction through the through holes 202 as uniformly as possible. The shape of the through hole 202 may be a circular, square, or strip-shaped hole, etc., without limitation.

Preferably, the electrode element 211 is implemented as an integrated metal plate structure, wherein the electrode element 211 has a certain thickness to ensure that the electrode element 211 is not easily bent or damaged in use, or the electrode element 211 is not easily bent or deformed significantly when supporting a certain weight of the substrate 600, so as to ensure the reliability of the plating process.

As shown in fig. 2B, optionally, the electrode element 211 is implemented as a plurality of metal strip structures arranged in parallel or staggered horizontally and vertically, wherein the strip structures have a certain width and hardness, and the through holes 202 are formed between adjacent strip structures, that is, when the strip structures are arranged in parallel, the through holes 202 are strip holes, or when the strip structures are arranged in criss-cross manner, for example, when the strip structures are arranged orthogonally, the through holes 202 are square holes.

As shown in fig. 2C, the electrode element 211 is optionally implemented as a metal mesh structure, wherein the mesh structure has a certain hardness to support a certain weight of the substrate 600, and the mesh of the mesh structure is the through hole 202.

Further, the legs 212 are implemented as four metal column structures, wherein four legs 212 are symmetrically connected to four corners of the electrode element 211 of each layer, respectively, so that the electrode elements 211 of adjacent layers are parallel, wherein each leg 212 has a foot 2121, respectively, wherein the foot 2121 protrudes out of the plane of the electrode element 211 of the outermost layer, wherein the foot 2121 is used for supporting the bottom wall of the chamber 101, so that the electrode element 211 is suspended in the chamber 101. The insulator 22 is disposed between the legs 2121 and the chamber 101. Preferably, the insulator 22 is mounted to the free end of the leg 2121 such that when the holder 20 is placed in the chamber 101, the insulator 22 is located just between the leg 2121 and the bottom of the chamber 101 for insulation.

It will be understood by those skilled in the art that the number, shape and arrangement position of the legs 212 can be preset to support each of the electrode elements 211. For example, the leg 212 is implemented as a cylindrical structure connected to the center of the electrode element 211 of each layer. In order to provide a reliable supporting effect, the supporting area of the foot 2121 can be preset, for example, the foot 2121 is implemented as a square plane structure, so that the support 20 can be supported in the chamber 101 in a balanced manner by means of the foot 2121. Alternatively, the legs 2121 may also be implemented to be mounted to a side wall or a top wall of the chamber 101, without limitation.

In this embodiment, the rack 20 can be freely placed in or taken out of the chamber 101, so that the worker can conveniently operate the rack, that is, the worker can place the substrate 600 in the supporting space 201 of the rack 20 in advance from the outside and then place the rack 20 in the chamber 101, so that the worker can conveniently take out the rack 20 to clean or replace the rack 20, or clean the inner wall of the chamber 101. In addition, the support 20 can be recycled, that is, the support 20 can be used to install another batch of the substrate 600 again when coating for the second time, and then the substrate is placed in the chamber 101 for coating again, which is beneficial to mass production.

Alternatively, the holder 20 can be fixedly disposed in the chamber 101, that is, the holder 20 is always located in the chamber 101 before and after coating without being taken out.

It will be appreciated that in this preferred embodiment of the invention, the entire support 20 acts as the negative pole. The electrode member 211 may serve not only as an electrode but also as a support for the substrate 600. In a contemplated variant embodiment, the electrode element 211 is electrically connected to the negative pole of the pulsed power supply, while the other components of the support 20 may be insulating materials, and the support 20 may provide an additional support layer for supporting the electrode element 211. The electrode element 211 and the pulse power source 32 of the power supply device 30 form an electrode device according to the present invention.

Further, the cavity 10 has at least one pumping hole 11, at least one gas inlet 12 and at least one feed hole 13, which are communicated with the chamber 101, wherein the pumping hole 11 is used for being connected to a pipeline to pump out gas in the chamber 101, wherein the gas inlet 12 is used for being connected to a pipeline to introduce a plasma source gas of inert gas such as nitrogen, carbon tetrafluoride, carbon tetrachloride or helium, argon and the like into the chamber 101, and wherein the feed hole 13 is used for being connected to a pipeline to introduce hydrogen into the chamber 101 and to introduce a reaction raw material such as hydrocarbon gas and the like into the chamber 101, and the hydrocarbon gas is one or more combinations of gaseous raw materials such as alkane, alkene, alkyne and the like with 1 to 6 carbon atoms, or one or more combinations of gaseous raw materials and the like formed by vaporizing liquid hydrocarbon raw materials with higher carbon atoms. It is understood that the conduits can be respectively provided with an on-off valve to respectively control the on-off of the conduits to achieve the circulation and the off-off of the gas, or the on-off valve can control the flow rate of the gas filled in the chamber 101, which is not limited herein.

Further, the feed inlet 13 may be used to fill the chamber 101 with an auxiliary gas of doping elements such as N, Si, F, and B. For example, the doped Si element assist gas includes, but is not limited to, silicon-containing organic compounds including one or more combinations of organic linear siloxanes, cyclic siloxanes, alkoxysilanes, unsaturated carbon-carbon double bond-containing siloxanes. Further, hexamethyldisiloxane, tetramethyldivinyldisiloxane, hexamethylcyclotrisiloxane and octamethylcyclotetrasiloxane are selected. For example, doped N-element assist gases include, but are not limited to, N₂And a nitrogen-containing hydrocarbon. For example, the doped auxiliary gas of F element includes but is not limited to fluorocarbon, further, selected from carbon tetrafluoride, tetrafluoroethylene. For example, the doped B element auxiliary gas includes, but is not limited to, borane with a boiling point below 300 ℃ at normal pressure, and further, pentaborane and hexaborane are selected.

In the present embodiment, the pumping hole 11 is disposed at a middle position of the chamber 101 of the chamber 10, wherein the gas inlet 12 and the gas inlet 13 are both disposed at a side wall position of the chamber 101 of the chamber 10, so that the gas is pumped from the gas inlet 12 and the gas inlet 13 at the side wall of the chamber 101, and is pumped from the pumping hole 11 at the middle position of the chamber 101, so as to ensure that the pumped gas is diffused as uniformly as possible to the surface of each of the substrates 600, thereby coating the surface of each of the substrates 600 with the thin film as uniformly as possible.

Alternatively, the pumping hole 11 may be disposed in the middle of the bottom wall or the top wall of the chamber 101, and the pumping hole 11 may also be communicated with a pumping column disposed in the middle of the chamber 101, that is, the pumping column is located in the middle of the support 20, wherein the gas inlet 12 and the feed inlet 13 may be located on the same side wall of the chamber 101, or may be located on different side walls of the chamber 101, respectively. Alternatively, the pumping port 11 may be disposed at a side wall position of the chamber 101, the gas inlet 12 and the feed port 13 may be disposed at a middle position of the chamber 101 or a side wall position opposite to the pumping port 11, and the like, without being limited thereto.

It is understood that the relative positions of the pumping hole 11, the gas inlet 12 and the feed hole 13 in the chamber 101 can be preset according to actual requirements, so as to meet the requirement of uniformly coating the substrate in large batch as much as possible, thereby ensuring the specification uniformity.

Further, the embodiment also provides a coating method of the coating apparatus 100, including the steps of:

s01, the support 20 is located in the chamber 101, wherein the substrate 600 is supported in the supporting space 201 of the support 20, a negative pressure generating operation such as vacuum pumping is performed on the chamber 101, and during film coating, a vacuum pump pumps air in the chamber 101 through the pumping hole 11 to make the air pressure in the chamber 101 within a preset range, so as to reduce the influence of air remained in the chamber 101 on the film coating quality as much as possible until the air pressure in the chamber 101 reaches a preset air pressure value.

S02, entering a stage of performing a surface etching process or a surface cleaning and activating process on the surface of the substrate 600, specifically, the plasma source gas is continuously filled into the chamber 101 through the gas inlet 12 for performing the surface etching process on the substrate, preferably, argon or helium is introduced into the chamber 101 through the gas inlet 12, wherein a flow rate is approximately 10sccm to 1000sccm, preferably 80 or 100 sccm. Meanwhile, a vacuum pump is used to continuously pump out a certain amount of gas in the chamber 101 and maintain the pressure in the chamber 101 within 0.01-100Pa, preferably 8Pa or 10Pa or 100 Pa. Meanwhile, the pulse power supply 32 of the power supply 30 provides a pulse voltage to act on the gas in the chamber 101 to clean and activate the surface of the substrate 600, so as to perform an etching process on the surface of the substrate 600.

It is worth mentioning that, during the cleaning and activating phase of the surface of the substrate 600, the flow rate of the gas filled into the chamber 101 through the gas inlet 12 can be preset within a reasonable range, so as to prevent the phenomenon that the flow rate of the gas filled into the chamber 101 is too high or too low, which may affect the ionization effect of the surface of the substrate 600. The pulse voltage provided by the pulse power source 32 of the power supply device 30 is preset within a reasonable range to prevent the voltage from being too low to perform a good cleaning and activating effect on the surface of the substrate 600, or to prevent the substrate 600 from being damaged due to too high voltage. The power supply time of the pulse power supply 32 of the power supply device 30 can be preset within a reasonable range, so as to prevent the power supply time from being too short to achieve a good cleaning and activating effect on the surface of the substrate 600, or the power supply time from being too long to prolong the period of the whole coating process, thereby causing unnecessary waste.

S03, coating the surface of the substrate 600, specifically, filling the plasma source gas into the chamber 101 through the gas inlet 12, filling the hydrogen gas into the chamber 101 through the feed inlet 13, filling the reaction raw material such as hydrocarbon gas or vaporized hydrocarbon gas into the chamber 101, or further filling the gas such as doping raw material into the chamber 101. Preferably, the gas to be ionized filled in the chamber 101 has a flow rate of 10 to 200sccm, the gas flow rate of hydrogen gas is 0 to 100sccm, the gas flow rate of the reaction raw material such as hydrocarbon gas is 50 to 1000sccm, or the gas flow rate of the assist gas of the doping element is 0 to 100 sccm. Meanwhile, a certain amount of gas in the chamber 101 is continuously pumped out by a vacuum pump and the pressure in the chamber 101 is maintained within 0.01 to 100Pa, preferably within 8Pa, 10Pa or 100 Pa. Meanwhile, the power supply device 30 is used to provide a high-voltage pulse bias to assist the plasma chemical vapor deposition to prepare the film on the surface of the substrate 600, wherein the voltage of the pulse bias provided by the power supply device 30 is-100V to-3500V, the duty ratio is 5% to 100%, and the power supply time of the power supply device 30 is 5 to 300 minutes, that is, in the step S03, the time for coating the substrate 600 is approximately 5 to 300 minutes.

In step S03, specifically, the pulse power source 32 of the power supply device 30 generates a strong electric field in the chamber 101 by providing a strong voltage in the high-voltage pulse bias, so that the active particles in a high-energy state are subjected to the strong electric field to accelerate deposition on the surface of the substrate 600, and form an amorphous carbon network structure. The pulse power source 32 provides a state of a low potential or a low voltage in a high voltage pulse bias voltage, so that the amorphous carbon network structure deposited on the surface of the substrate 600 undergoes free relaxation, and the carbon structure is thermodynamically transformed to a stable phase-curved graphene sheet layer structure and is embedded in the amorphous carbon network, thereby forming the thin film on the surface of the substrate 600. In addition, the power supply 30 may further include the rf power source 31 to provide rf voltage.

It should be understood that, in the step S03, the voltage or the power of the power supply device 30 can be preset, and under the voltage provided by the power supply device 30, substantially all the gas in the chamber 101 can be ionized into plasma, so that a plasma environment is formed in the chamber 101, so as to facilitate the film coating apparatus 100 to prepare the film on the surface of the substrate 600 by chemical vapor deposition.

It is to be understood that the ratio of the flow rates of the plasma source gas, the hydrogen gas, the reaction raw material gas, or the auxiliary gas of the doping element, which is charged into the chamber 101, determines the atomic ratio in the thin film, thereby affecting the quality of the thin film. By presetting parameters such as the power or voltage of the radio frequency and/or pulse bias voltage provided by the power supply device 30, it is possible to realize the regulation of the temperature, ionization rate or deposition rate and other related parameters in the coating process, or by presetting the power supply time of the power supply device 30, it is possible to prevent the phenomena of the thin film, poor hardness performance and the like caused by too short coating time, or the phenomena of transparency and the like caused by the thick film caused by too long coating time.

That is, in the step S03, the DLC films having different hydrogen contents can be prepared without filling the chamber 101 with hydrogen gas at different flow rates or with a certain amount of hydrogen gas filled in the chamber 101. It can be understood that the DLC film with higher hydrogen content has higher lubricity and transparency than the DLC film with lower hydrogen content, and in the step S03, a certain amount of hydrogen gas is filled into the chamber 101, which is beneficial to the formation of SP3 bonds during the coating process, and the hardness of the film can be increased to a certain extent, but as the hydrogen content is further increased, the hardness of the film gradually decreases, so that in the step S03, a preset amount of hydrogen gas can be selectively filled into the chamber 101 through the feed inlet 13 according to different coating requirements.

Accordingly, in the step S03, a certain amount of auxiliary gas of the specified doping element can be selectively charged into the chamber 101 through the feed opening 13. For example, the chamber 101 is filled with a reaction material containing fluorine, so that the prepared film has higher hydrophobic effect and transparency of the film layer, but when the content of fluorine atoms exceeds 20%, the hardness of the film is significantly reduced (lower than 4H on mohs scale).

And S04, filling air into the chamber 101 after the coating time of the step S03 is finished, so that the chamber 101 is in a normal pressure state. Namely, a certain amount of air is filled into the chamber 101 to return the chamber 101 to a normal pressure state, so that the operator can open the chamber 101 and take out the substrate 600, and the coating process is finished. In the whole coating process, the coating equipment 100 has good process controllability in the process of preparing the film, and is beneficial to quickly preparing the target film.

Alternatively, the pulse power source 32 can also be implemented as a symmetrical bidirectional pulse power source, i.e., the positive voltage and the negative voltage provided by the pulse power source 32 have the same magnitude. Alternatively, the pulse power source 32 may be implemented as an asymmetric bidirectional pulse power source, wherein the negative voltage value provided by the pulse power source 32 is greater than the positive voltage value to provide the film quality, but is not limited thereto. That is, the chamber 10 is not grounded, wherein the chamber 10 can have a positive pressure value.

It should be noted that the shape and structure of the support 20 are not limited, and the shape and size or number of the support 20 can be adjusted within the volume of the chamber 101. Further, the chamber 10 has an openable and closable sealing door for a worker to open or close the chamber 101 for placing or removing the substrate 600 and the chamber 101.

For example, the parameters of the coating device 100 in the coating process are as follows: air intake amount: Ar/N₂/H₂/CH₄：50-500sccm，C₂H₂/O₂: 10-200 sccm; the vacuum degree of the chamber 101 before coating (i.e., the step S02): less than 2 x 10^-3Pa; during coating (i.e., at the stage of step S03), the vacuum degree of the coating chamber 101 is: 0.1-20 Pa; coating voltage: -300 to-3500V, duty cycle: 5-100%, frequency: 20-360 KHz; coating time: 0.1 to 5hrs, and the thickness of the thin film is less than 50 nm, which is only an example and not a limitation of the present invention.

Further, the present embodiment also provides an electrode of the plating device 100, wherein the positive terminal 110 of the chamber 10 is electrically connected to the positive terminal 322 of the pulse power source 32 of the plating device 100 as a positive electrode, wherein the negative terminal 210 of the holder 20 is electrically connected to the negative terminal 321 of the pulse power source 32 as a negative electrode, and wherein the holder 20 is insulated from the chamber 10. Further, the positive terminal 110 of the chamber 10 is grounded to make the chamber 10 at a positive or zero potential.

Further, this embodiment also provides an accessing method of the electrode of the plating device 100, including the steps of: the bracket 20 of the coating equipment 100 is electrically connected to the negative terminal of the power supply device 30, and the cavity 10 of the coating equipment 100 is electrically connected to the positive terminal of the power supply device 30, wherein the bracket 20 and the cavity 10 are insulated.

Further, the present embodiment also provides the thin film, wherein the thin film is prepared by the coating apparatus 100 and formed on the surface of the substrate 600. It is understood that the thin film may be formed by one or more times of coating on the surface of the substrate 600 by the coating apparatus 100.

It will be understood by those skilled in the art that the embodiments of the present invention as described above and shown in the drawings are given by way of example only and are not limiting of the present invention. The objects of the present invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the embodiments without departing from the principles, embodiments of the present invention may have any deformation or modification.

Claims

1. An electrode device applied to a coating apparatus for preparing a DLC film on a substrate surface, the coating apparatus comprising a grounded chamber, the electrode device comprising:

one or more electrode elements; and

2. The electrode device of claim 1, wherein the power supply is a high voltage pulse power supply.

3. The electrode assembly of claim 2 wherein said chamber is connected to a positive terminal of said power supply and to ground.

4. The electrode device of claim 1, wherein the electrode element further serves as a support element for the substrate.

5. The electrode assembly of any one of claims 1 to 4, wherein the coating apparatus comprises a support comprising a body and at least one insulating member, wherein the body comprises the electrode element and at least one leg, wherein the body has at least one supporting space for supporting the substrate, and wherein the insulating member is disposed between the body and the chamber.

6. The electrode device of claim 5, wherein the electrode element is connected to the leg, wherein an upper side of the electrode element forms the support space, wherein the leg is adapted to be supported in a cavity of the cavity, wherein the insulator is disposed between the leg and the cavity.

7. The electrode device according to claim 5, wherein the electrode members are made of an electrically conductive material and are electrically connected to each other, one of the electrode members being electrically connected to the negative electrode of the power supply device.

8. The electrode device of claim 5, wherein the electrode elements and the legs are each made of an electrically conductive material, and the legs are electrically connected to each of the electrode elements, wherein the legs are connected to the negative electrode of the power supply device.

9. The electrode device according to claim 5, wherein a plurality of the electrode members are sequentially arranged in a layered structure in which upper sides of the electrode members of each layer form the supporting space for supporting the substrate.

10. The electrode device according to claim 5, wherein a plurality of the electrode members extend radially about a central axis, wherein the support space extending radially is formed between two adjacent electrode members.

11. The electrode device of claim 5, wherein the electrode element has a set of through holes to communicate with adjacent support spaces.