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WO2019087702A1 - Substrate treatment device and substrate treatment method - Google Patents

Substrate treatment device and substrate treatment method Download PDF

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Publication number
WO2019087702A1
WO2019087702A1 PCT/JP2018/037558 JP2018037558W WO2019087702A1 WO 2019087702 A1 WO2019087702 A1 WO 2019087702A1 JP 2018037558 W JP2018037558 W JP 2018037558W WO 2019087702 A1 WO2019087702 A1 WO 2019087702A1
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WO
WIPO (PCT)
Prior art keywords
temperature
processing liquid
substrate
processing
end time
Prior art date
Application number
PCT/JP2018/037558
Other languages
French (fr)
Japanese (ja)
Inventor
喬 太田
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN201880071095.2A priority Critical patent/CN111316404B/en
Priority to KR1020207014282A priority patent/KR102376797B1/en
Publication of WO2019087702A1 publication Critical patent/WO2019087702A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present invention relates to a substrate processing apparatus for processing a substrate and a substrate processing method.
  • the substrate processing apparatus described in Patent Document 1 is a single-wafer type that processes substrates one by one. Then, the substrate processing apparatus mixes a room temperature phosphoric acid aqueous solution and a high temperature sulfuric acid aqueous solution having a temperature higher than the boiling point of the phosphoric acid aqueous solution in the supply pipe, and mixes the mixed solution of phosphoric acid, sulfuric acid and water. Generate The aqueous phosphoric acid solution mixed with the aqueous sulfuric acid solution is heated by the heat of the aqueous sulfuric acid solution. Furthermore, heat of dilution is generated by mixing the aqueous phosphoric acid solution and the aqueous sulfuric acid solution.
  • the phosphoric acid aqueous solution mixed with the sulfuric acid aqueous solution is heated not only by the heat of the sulfuric acid aqueous solution but also by the dilution heat. Therefore, the phosphoric acid aqueous solution contained in the liquid mixture is heated to near the boiling point, and a liquid mixture containing the phosphoric acid aqueous solution near the boiling point (hereinafter referred to as "processing liquid") is discharged onto the substrate.
  • processing liquid a liquid mixture containing the phosphoric acid aqueous solution near the boiling point
  • fluctuations in the ambient temperature of the substrate being processed may have a slight effect on the temperature of the processing solution.
  • the influence of the fluctuation of the environmental temperature is greater than that when a non-high temperature treatment liquid is used because the difference between the ambient temperature and the temperature of the treatment liquid is large.
  • the processing liquid is adjusted to a predetermined temperature in a processing liquid tank for storing the processing liquid and a circulation pipe for circulating the processing liquid at a preparation stage of supplying the processing liquid to the substrate. Measures have been taken, and measures have been taken to set the flow rate and discharge time of the treatment liquid to predetermined values according to the treatment process.
  • the temperature of the processing solution actually supplied to the substrate slightly changes.
  • the temperature adjustment of the treatment liquid tank and the circulation pipe is performed, and the flow rate and discharge time of the treatment liquid are controlled.
  • the processing results of the processing liquid vary among the plurality of substrates.
  • the integrated heat quantity indicates a physical quantity that represents the integrated value of the heat quantity of the processing liquid to be introduced into the substrate. Specifically, the integrated heat quantity is represented by a time integral value of the temperature of the treatment liquid.
  • FIG. 12 is a diagram showing the temperature transition of the processing liquid in a general substrate processing apparatus. As shown in FIG. 12, the horizontal axis indicates time, and the vertical axis indicates the temperature of the processing solution. The time t0 indicates the discharge start time of the treatment liquid, and the time te indicates the discharge end time of the treatment liquid. The temperature Tr indicates an environmental temperature.
  • Curve C1 shows the temperature transition of the processing liquid when processing the first substrate.
  • Curve C2 shows the temperature transition of the processing solution when processing the second substrate.
  • Curve C3 shows the temperature transition of the processing solution when processing the third substrate.
  • the processing time of the first to third substrates is constant (te ⁇ t0). Then, as shown by the curves C1 and C2, the temperature transition of the processing liquid is substantially the same between the first substrate and the second substrate. Therefore, the accumulated heat amount is substantially the same between the first substrate and the second substrate. As a result, the processing results for the first substrate and the second substrate are approximately equal.
  • the temperature of the processing liquid for the third substrate is slightly higher than the temperature of the processing liquid for the first substrate in a certain time zone because of the influence of the fluctuation of the environmental temperature. Low. Therefore, the integrated heat amount for the third substrate is slightly smaller than the integrated heat amount for the first substrate. Furthermore, the processing result depends on the integrated heat quantity. As a result, the processing results may be slightly different between the first substrate and the third substrate.
  • the inventor of the present application has found that when the integrated heat quantity is different among the plurality of substrates due to the influence of the change of the environmental temperature, the processing results are slightly dispersed among the plurality of substrates I found out that there is a possibility.
  • the inventor of the present application has intensively studied the substrate processing apparatus and the substrate processing method from the viewpoint of the integrated heat quantity.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of improving the uniformity of the processing result by the processing liquid among a plurality of substrates.
  • a substrate processing apparatus processes a substrate.
  • the substrate processing apparatus includes a chamber, a nozzle, a supply pipe, a valve, a temperature detection unit, and a control unit.
  • the chamber contains the substrate.
  • the nozzle is disposed in the chamber and discharges the processing solution toward the substrate.
  • the supply pipe supplies the processing liquid to the nozzle.
  • the valve is switchable between an open state in which the treatment liquid flowing in the supply pipe is passed toward the nozzle and a closed state in which the supply of the treatment liquid from the supply pipe to the nozzle is stopped.
  • the temperature detection unit detects the temperature of the processing liquid in the chamber.
  • the control unit controls the valve based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value.
  • the integrated heat amount indicates a physical quantity that represents an integrated value of the heat amount of the processing liquid supplied to the substrate.
  • the control unit controls the valve based on discharge end time information so that the valve changes from the open state to the closed state.
  • the discharge end time information is previously defined based on a temperature profile and indicates a discharge end time of the treatment liquid. It is preferable that the temperature profile represents a time transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is discharged onto the same substrate as the substrate. It is preferable that the discharge end time indicated by the discharge end time information indicates a time in which a time integral value of the temperature of the same processing liquid is equal to the predetermined value.
  • the control unit execute the selection processing during a period in which the processing liquid is discharged toward the substrate. It is preferable that the selection process indicates a process of selecting discharge end time information corresponding to the temperature of the processing liquid from a plurality of the discharge end time information. Preferably, the control unit controls the valve based on the selected discharge end time information to change the valve from the open state to the closed state.
  • the plurality of pieces of ejection end time information are preferably defined in advance based on a plurality of mutually different temperature profiles.
  • control unit executes the selection process only once.
  • the temperature detection unit detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid.
  • the control unit executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time, at each predetermined detection time.
  • the processing solution preferably contains a mixture of phosphoric acid or sulfuric acid / hydrogen peroxide solution.
  • the control unit controls, for each of the chambers, the discharge time of the processing liquid so that the integrated heat amount becomes the predetermined value.
  • a substrate processing method is a method of processing a substrate.
  • the substrate processing method comprises the steps of: discharging a processing solution toward the substrate accommodated in a chamber; detecting the temperature of the processing solution in the chamber; and detecting the temperature of the processing solution. And a control step of controlling the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value.
  • the integrated heat amount indicates a physical quantity that represents an integrated value of the heat amount of the processing liquid supplied to the substrate.
  • the control step preferably includes an end step of ending the discharge of the processing liquid based on discharge end time information.
  • the discharge end time information is previously defined based on a temperature profile and indicates a discharge end time of the treatment liquid. It is preferable that the temperature profile represents a time transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is discharged onto the same substrate as the substrate. It is preferable that the discharge end time indicated by the discharge end time information indicates a time in which a time integral value of the temperature of the same processing liquid is equal to the predetermined value.
  • the control step further includes a selection step of executing a selection processing during a period in which the processing liquid is discharged toward the substrate. It is preferable that the selection process indicates a process of selecting discharge end time information corresponding to the temperature of the processing liquid from a plurality of the discharge end time information.
  • the termination step the ejection of the processing liquid is preferably terminated based on the selected ejection termination time information.
  • the plurality of pieces of ejection end time information are preferably defined in advance based on a plurality of mutually different temperature profiles.
  • the selection processing is performed only once.
  • the temperature of the processing liquid is detected at a plurality of predetermined detection times during discharge of the processing liquid.
  • the selection process is performed based on the temperature of the processing liquid detected at the predetermined detection time, at each predetermined detection time.
  • the processing liquid contains phosphoric acid or a mixed solution of sulfuric acid and hydrogen peroxide.
  • the discharge time of the processing liquid may be controlled such that the integrated heat quantity becomes the predetermined value for each of the plurality of chambers accommodating the plurality of substrates. preferable.
  • the present invention it is possible to improve the uniformity of the processing result by the processing liquid among a plurality of substrates.
  • FIG. 5 is a view showing temperature transition of a processing liquid in the substrate processing apparatus according to the first embodiment.
  • FIG. 2 is a view showing a temperature profile of the substrate processing apparatus according to the first embodiment.
  • FIG. 7 is a view showing a discharge end time table of the substrate processing apparatus according to the first embodiment. It is a flowchart which shows the substrate processing method which the substrate processing apparatus which concerns on Embodiment 1 performs.
  • FIG. 16 is a view showing a discharge end time table of the substrate processing apparatus according to a modification of the first embodiment. It is a flowchart which shows the substrate processing method which the substrate processing apparatus which concerns on a modification performs.
  • FIG. 8 is a view showing the inside of a processing unit of the substrate processing apparatus according to the second embodiment.
  • FIG. 7 is a view showing piping of a substrate processing apparatus according to a second embodiment.
  • FIG. 7 is a view showing temperature transition of a processing liquid in the substrate processing apparatus according to Embodiment 2. It is a figure which shows the temperature transition of the process liquid in a common substrate processing apparatus.
  • FIG. 1 is a view showing a substrate processing apparatus 100.
  • the substrate processing apparatus 100 processes a substrate W.
  • the substrate processing apparatus 100 is a single wafer type that processes the substrates W one by one.
  • the substrate processing apparatus 100 includes a chamber 1, a nozzle 3, a supply pipe 5, a valve 7, a temperature detection unit 9, a control unit 11, and a storage unit 13.
  • the chamber 1 contains a substrate W.
  • the substrate W has a substantially disc shape in the first embodiment.
  • the nozzle 3 is disposed in the chamber 1.
  • the nozzle 3 discharges the processing liquid toward the substrate W.
  • the treatment liquid is a chemical solution.
  • the processing solution contains phosphoric acid.
  • the process liquid contains a sulfuric acid / hydrogen peroxide mixture (SPM).
  • SPM sulfuric acid / hydrogen peroxide mixture
  • the processing solution containing phosphoric acid or SPM is an example of the processing solution used at high temperature.
  • the supply pipe 5 is connected to the nozzle 3.
  • the supply pipe 5 supplies the processing liquid to the nozzle 3.
  • the temperature of the processing liquid supplied to the supply pipe 5 is maintained at a specific temperature higher than a specified temperature (hereinafter, referred to as "specified temperature TM") higher than room temperature.
  • the prescribed temperature TM indicates a temperature at which a prescribed processing rate (for example, a prescribed etching rate or a prescribed object removal rate) can be realized for the substrate W.
  • the prescribed temperature TM indicates a temperature at which the substrate W can achieve a prescribed processing result (for example, a prescribed etching amount or a prescribed target removal amount) within a prescribed time.
  • the specified temperature TM is, for example, 175 ° C. in the treatment liquid containing phosphoric acid.
  • the specified temperature TM is, for example, 200 ° C. in the treatment liquid containing SPM.
  • the valve 7 is arranged in the supply line 5.
  • the valve 7 is an open / close valve, which can be switched between an open state and a closed state.
  • the open state is a state in which the processing liquid flowing in the supply pipe 5 toward the nozzle 3 is allowed to pass.
  • In the closed state the supply of the processing liquid from the supply pipe 5 to the nozzle 3 is stopped.
  • the temperature detection unit 9 detects the temperature of the processing liquid in the chamber 1.
  • the temperature detection unit 9 detects the temperature of the processing liquid in the supply pipe 5.
  • the temperature measuring unit (not shown) of the temperature detection unit 9 contacts the processing liquid in the supply pipe 5 to detect the temperature of the processing liquid.
  • the temperature detection unit 9 preferably detects the temperature of the processing liquid in the supply pipe 5 in the vicinity of the nozzle 3. This is because the detected temperature becomes closer to the temperature of the processing liquid on the substrate W as the position where the temperature detection unit 9 detects the temperature is closer to the nozzle 3.
  • the temperature detection unit 9 includes a temperature sensor.
  • the temperature sensor includes, for example, a thermocouple and a meter. Specifically, a thermocouple is inserted into the supply pipe 5. And a thermocouple detects the temperature of the process liquid in supply piping 5, and outputs the voltage signal corresponding to temperature to a measuring device. The measuring device converts the voltage signal into a temperature and outputs information indicating the temperature to the control unit 11.
  • the measuring instrument may be disposed in the chamber 1 or may be disposed outside the chamber 1. It is preferable to arrange the temperature measurement contact of the thermocouple in the vicinity of the nozzle 3 in the supply pipe 5. The temperature measurement contact corresponds to the temperature measurement unit of the temperature detection unit 9.
  • the temperature detection unit 9 may detect the temperature of the processing liquid indirectly by detecting the temperature of the outer surface of the supply pipe 5. Also, for example, the temperature detection unit 9 may detect the temperature of the treatment liquid inside the nozzle 3 or indirectly detect the temperature of the treatment liquid by detecting the temperature of the outer surface of the nozzle 3 Good.
  • the temperature detection unit 9 detects the temperature of the processing liquid in the chamber 1, the temperature of the processing liquid may be detected at a position other than the supply pipe 5 and a position other than the nozzle 3.
  • the temperature detection unit 9 may detect the temperature of the processing liquid on the substrate W after the processing liquid is discharged onto the substrate W.
  • the temperature detection unit 9 includes a radiation thermometer. The radiation thermometer measures the intensity of infrared light or visible light emitted from the processing liquid discharged onto the substrate W, and measures the temperature of the processing liquid discharged onto the substrate W. Then, the radiation thermometer outputs a signal indicating the temperature of the treatment liquid to the control unit 11.
  • the control unit 11 controls the discharge time of the processing liquid based on the temperature of the processing liquid detected by the temperature detection unit 9 while discharging the processing liquid toward the substrate W. Specifically, the control unit 11 controls the valve 7 based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value PV. "The accumulated heat amount becomes a predetermined value" by the control of the control unit 11 indicates "the accumulated heat amount becomes substantially equal to the predetermined value".
  • the predetermined value PV is determined, for example, experimentally and / or empirically so as to achieve a predetermined processing result by the processing solution.
  • FIG. 2 is a diagram showing temperature transition of the treatment liquid. As shown in FIG. 2, the horizontal axis indicates time, and the vertical axis indicates the temperature of the processing solution.
  • the temperature Tr indicates the temperature of the ambient environment of the substrate W (hereinafter referred to as “environmental temperature”).
  • Curve C represents the temperature transition of the processing liquid when processing the substrate W with the processing liquid.
  • the temperature of the treatment liquid indicates the temperature detected by the temperature detection unit 9.
  • discharge of the treatment liquid is started. Accordingly, the treatment liquid contacts the temperature measuring unit of the temperature detection unit 9 at time t0.
  • the temperature of the processing liquid detected by the temperature detection unit 9 rises sharply.
  • the discharge of the treatment liquid is completed and the treatment liquid is sucked back (sucked). Therefore, the processing liquid separates from the temperature measuring unit at time te. As a result, the temperature of the processing liquid detected by the temperature detection unit 9 drops sharply.
  • the area of the area (hatched area) surrounded by the curve C indicates the integrated heat quantity.
  • the temperature of the processing liquid when processing the substrate W is approximately proportional to the amount of heat of the processing liquid introduced to the substrate W.
  • the integrated heat amount is represented by an integrated value of the temperature of the processing liquid when processing the substrate W.
  • the integrated heat quantity is represented by a time integral value of the temperature of the treatment liquid.
  • the integrated heat amount is represented by a time integral value of the temperature of the processing liquid from time t0 to time te.
  • the integrated amount of heat indicates a physical quantity that represents the integrated value of the amount of heat of the processing liquid supplied to the substrate W.
  • the integration start time of the integrated heat amount is any time during a period in which the temperature of the processing liquid is equal to or higher than the specified temperature TM.
  • the integration completion time of the integrated heat amount is a time when the discharge of the processing liquid is completed.
  • the control unit 11 controls the valve 7 based on the temperature of the processing liquid so that the integrated heat amount becomes the predetermined value PV. Control the discharge time of the processing solution. For example, when the temperature of the processing liquid detected by the temperature detection unit 9 is substantially equal to the reference temperature of the processing liquid, the discharge time of the processing liquid is set to the predetermined time PT to set the integrated heat amount to the predetermined value PV. .
  • the reference temperature of the processing liquid indicates a reference value of the temperature of the processing liquid when processing the substrate W.
  • the discharge time of the processing liquid is made longer than the predetermined time PT, and the accumulated heat amount is set to the predetermined value PV.
  • the discharge time of the processing liquid is made shorter than the predetermined time PT, and the accumulated heat amount is set to the predetermined value PV.
  • the integrated heat amount becomes the predetermined value PV. That is, the accumulated heat amount for one substrate W is constant among the plurality of substrates W. Therefore, the dependence of the processing result of the substrate W by the processing liquid on the environmental temperature is suppressed. As a result, the uniformity of the processing result by the processing liquid can be improved among the plurality of substrates W. In other words, it is possible to suppress the variation in the processing result by the processing liquid among the plurality of substrates W.
  • the control of the control unit 11 is particularly effective when using a high temperature treatment liquid (for example, a treatment liquid containing phosphoric acid or a treatment liquid containing SPM).
  • a high temperature treatment liquid for example, a treatment liquid containing phosphoric acid or a treatment liquid containing SPM.
  • the difference between the environmental temperature and the temperature of the treatment liquid is large, so the influence of the fluctuation of the environmental temperature on the temperature of the treatment liquid is greater than that when a non-high temperature treatment liquid is used It is from.
  • the uniformity of the processing result by the processing liquid can be improved among the plurality of substrates W.
  • the control unit 11 controls the discharge time of the processing liquid based on the discharge end time information ST.
  • the discharge end time information ST is defined in advance based on the temperature profile, and indicates the discharge end time of the processing liquid when the integrated heat amount reaches a predetermined value PV.
  • the discharge end time indicated by the discharge end time information ST indicates the time for specifying the discharge end time of the processing liquid. That is, the discharge end time information ST specifies the discharge end time of the processing liquid.
  • control unit 11 controls the valve 7 based on the discharge end time information ST so that the valve 7 changes from the open state to the closed state after the discharge start of the treatment liquid. More specifically, when the current time when discharging the treatment liquid coincides with the discharge end time specified by the discharge end time information ST, the control unit 11 changes from the open state to the closed state. Control the valve 7. As a result, the discharge of the processing liquid ends when the integrated heat amount reaches the predetermined value PV.
  • FIG. 3 is a diagram showing a temperature profile PF.
  • the horizontal axis represents time
  • the vertical axis represents the temperature of the processing solution.
  • Time t0 indicates the discharge start time of the processing liquid.
  • the time te1, the time te2, and the time te3 indicate the discharge end time of the treatment liquid.
  • the temperature Tr indicates an environmental temperature.
  • the temperature of the treatment liquid indicates the temperature detected by the temperature detection unit 9.
  • each of the temperature profiles PF has been created experimentally and / or empirically prior to processing the substrate W.
  • the same processing liquid SL the same processing liquid as the processing liquid discharged onto the substrate W
  • the temperature of the same processing liquid SL Represents the time transition of
  • each of the temperature profiles PF represents the relationship between the temperature of the same processing liquid SL being discharged and the discharge elapsed time. Then, each of the temperature profiles PF is defined such that the integrated heat quantity based on the same treatment liquid SL becomes a predetermined value PV, that is, the time integral value of the temperature of the same treatment liquid SL becomes a predetermined value PV.
  • Starting point times (for example, t0) of the plurality of temperature profiles PF are identical to one another.
  • the start time of the temperature profile PF is any time in a period in which the temperature of the same processing liquid SL is equal to or higher than the specified temperature TM.
  • the discharge start time t0 coincides with each start time of the temperature profile PF.
  • the end times (for example, te1 to te3) of the plurality of temperature profiles PF are different from one another.
  • the end time of the temperature profile PF is the time when the integrated heat quantity reaches a predetermined value PV.
  • the discharge end time indicated by the discharge end time information ST indicates the time in which the time integral value of the temperature of the same processing liquid SL is equal to the predetermined value PV in each of the temperature profiles PF. Therefore, according to the first embodiment, the discharge end time information ST can be easily defined by creating the temperature profile PF in advance.
  • the discharge end time information ST is different for each temperature profile PF. That is, the plurality of pieces of ejection end time information ST are defined in advance based on the plurality of different temperature profiles PF. In the plurality of temperature profiles PF, the maximum value of the temperature of the same processing liquid SL is different. Therefore, the plurality of temperature profiles PF are created under different temperature conditions.
  • the discharge end time indicated by the discharge end time information ST indicates the time from the start time of the temperature profile PF to the end time.
  • the discharge end time information ST defined from the temperature profile PF1 is described as “discharge end time information ST1”
  • the discharge end time information ST defined from the temperature profile PF2 is “discharge end time information
  • the ejection end time information ST defined from the temperature profile PF3 may be described as "ejection end time information ST3".
  • the discharge end time information ST1 indicates the time (discharge end time) from the discharge start time t0 of the same processing liquid SL to the discharge end time te1 in the temperature profile PF1.
  • the discharge end time te1 is the end time of the temperature profile PF1. That is, the discharge end time information ST1 indicates the time from the start time to the end time of the temperature profile PF1 (discharge end time).
  • the discharge end time information ST2 indicates the time (discharge end time) from the discharge start time t0 of the same processing liquid SL to the discharge end time te2 in the temperature profile PF2.
  • the discharge end time te2 is the end time of the temperature profile PF2. That is, the discharge end time information ST2 indicates the time from the start time to the end time of the temperature profile PF2 (discharge end time).
  • the discharge end time information ST3 indicates a time (discharge end time) from the discharge start time t0 of the same processing liquid SL to the discharge end time te3 in the temperature profile PF3.
  • the discharge end time te3 is the end time of the temperature profile PF3. That is, the discharge end time information ST3 indicates the time from the start time to the end time of the temperature profile PF3 (discharge end time).
  • the control unit 11 selects any one of the discharge end time information ST from the plurality of discharge end time information ST. That is, the control unit 11 executes the selection process during the period in which the process liquid is discharged toward the substrate W.
  • the selection process indicates a process of selecting discharge end time information ST corresponding to the temperature of the processing liquid from the plurality of discharge end time information ST.
  • the selection process indicates a process of selecting discharge end time information ST defined from the temperature profile PF closest to the temperature of the processing liquid among the plurality of temperature profiles PF from the plurality of discharge end time information ST.
  • the temperature of the treatment liquid indicates the temperature of the treatment liquid detected by the temperature detection unit 9 while the treatment liquid is being discharged.
  • control unit 11 controls the valve 7 based on the selected discharge end time information ST to change the valve 7 from the open state to the closed state.
  • the discharge of the processing liquid ends when the integrated heat amount reaches the predetermined value PV.
  • the selection process is performed during the period in which the treatment liquid is discharged toward the substrate W, and the temperature of the treatment liquid is reduced.
  • the corresponding ejection end time information ST is selected. Therefore, the discharge time of the processing liquid can be controlled based on the more appropriate discharge end time information ST according to the temperature of the processing liquid being discharged. As a result, the uniformity of the processing result by the processing liquid can be further improved among the plurality of substrates W.
  • the estimation of the discharge end time based on the temperature profile PF will be described with reference to FIG. 3 with reference to a specific example.
  • treatment liquid Q the treatment liquid
  • the same time axis as the time axis of the temperature profiles PF1 to PF3 The case where the temperature of the processing liquid Q detected at the time x1 of the above is “Td” will be described.
  • the temperature of the processing liquid on the temperature profile PF1 at time x1 is "T1”.
  • the temperature of the processing liquid on the temperature profile PF2 at time x2 is "T2".
  • the temperature of the processing liquid on the temperature profile PF3 at time x1 is "T3".
  • the temperature profile PF corresponding to the temperature closest to the temperature Td of the processing liquid Q among the temperatures T1 to T3 approximates the temperature transition of the processing liquid Q having the temperature Td at time x1.
  • the temperature profile PF1 having the temperature T1 at time x1 approximates the temperature transition of the processing liquid Q.
  • the temperature profile PF1 is defined such that the integrated heat quantity becomes a predetermined value PV.
  • the discharge end time when the integrated heat amount based on the treatment liquid Q becomes the predetermined value PV is the time from the start time t0 to the end time te1 of the temperature profile PF1 (that is, the discharge end time indicated by the discharge end time information ST1) It can be inferred that they substantially match. That is, the control unit 11 can estimate the discharge end time of the processing liquid Q based on the temperature of the processing liquid Q and the temperature profile PF1.
  • control unit 11 changes the valve 7 from the open state to the closed state based on the discharge end time information ST1 defined from the temperature profile PF1 closest to the temperature of the process liquid Q at time x1.
  • the integrated heat amount based on the above can be set to the predetermined value PV.
  • FIG. 4 is a diagram showing the discharge end time table TB.
  • the storage unit 13 stores a discharge end time table TB.
  • the discharge end time table TB is determined for the predetermined detection time x1, and a plurality of reference temperatures (in the first embodiment, the reference temperatures T1 to T3 in the first embodiment) are stored in the plurality of discharge end time information ST (in the first embodiment It is associated with the ejection end time information ST1 to the ejection end time information ST3).
  • the reference temperature T1 indicates the temperature T1 on the temperature profile PF1 at the predetermined detection time x1.
  • the discharge end time information ST1 indicates the time from the start time t0 of the temperature profile PF1 to the end time te1.
  • the reference temperature T2 indicates the temperature T2 on the temperature profile PF2 at the predetermined detection time x1.
  • the discharge end time information ST2 indicates the time from the start time t0 of the temperature profile PF2 to the end time te2.
  • the reference temperature T3 indicates the temperature T3 on the temperature profile PF3 at the predetermined detection time x1.
  • the discharge end time information ST3 indicates the time from the start time t0 to the end time te3 of the temperature profile PF3.
  • the control unit 11 refers to the discharge end time table TB to select the discharge end time information ST associated with the reference temperature closest to the temperature of the processing liquid. Therefore, according to the first embodiment, the appropriate ejection end time information ST can be easily selected from the plurality of ejection end time information ST by simple processing.
  • the discharge end time table TB has three reference temperatures (reference temperatures T1 to T3).
  • the number of temperature profiles PF is not particularly limited as long as it is two or more, and the number of reference temperatures is also not particularly limited as long as it is two or more corresponding to the number of temperature profiles PF.
  • the number of temperature profiles PF and the number of reference temperatures be larger. This is because it is possible to select a reference temperature that is more similar to the temperature of the processing liquid being discharged.
  • FIG. 5 is a flowchart showing a substrate processing method. As shown in FIG. 5, the substrate processing method is a method of processing a substrate W, and includes steps S1 to S7.
  • step S1 the temperature detection unit 9 starts detection of the temperature of the processing liquid. Then, the temperature detection unit 9 detects the temperature of the processing liquid during the period in which the processing liquid is discharged onto the substrate W. The temperature detection unit 9 outputs information indicating the temperature of the treatment liquid to the control unit 11.
  • Step S1 corresponds to an example of “detection step of detecting the temperature of the processing liquid in the chamber 1”.
  • step S3 the nozzle 3 starts discharging the processing solution toward the substrate W.
  • the control unit 11 controls the valve 7 so that the valve 7 changes from the closed state to the open state.
  • Step S3 corresponds to an example of “a discharge step of discharging the processing liquid toward the substrate W stored in the chamber 1”.
  • step S5 the control unit 11 determines whether the current time has reached the predetermined detection time x1.
  • step S5 If a negative determination is made (No in step S5), the process waits in step S5.
  • step S5 when an affirmative determination is made (Yes in step S5), the process proceeds to step S7.
  • step S7 the control unit 11 controls the discharge time of the treatment liquid based on the temperature of the treatment liquid detected at the predetermined detection time x1 so that the integrated heat amount based on the treatment liquid becomes the predetermined value PV.
  • Step S9 corresponds to an example of the “control step”.
  • step S7 includes steps S71 to S75.
  • step S71 the control unit 11 executes a selection process. Specifically, the control unit 11 selects the discharge end time information ST associated with the reference temperature closest to the temperature of the processing liquid with reference to the discharge end time table TB (FIG. 4). Step S71 corresponds to an example of “selection step of executing selection processing during a period in which the processing liquid is discharged toward the substrate W”.
  • step S73 the control unit 11 determines whether the current time has reached the discharge end time specified by the selected discharge end time information ST.
  • step S73 If a negative determination is made (No in step S73), the process waits in step S73. Therefore, the control unit 11 executes the selection process only once.
  • step S73 when an affirmative determination is made (Yes in step S73), the process proceeds to step S75.
  • step S75 the nozzle 3 ends the discharge of the treatment liquid.
  • the control unit 11 controls the valve 7 so that the valve 7 is closed from the open state.
  • the step S75 corresponds to an example of “a termination step of terminating the discharge of the processing liquid based on the discharge termination time information ST”.
  • control unit 11 executes the selection process only once. Therefore, the uniformity of the processing result by the processing liquid can be improved among the plurality of substrates W by the simple processing.
  • the control unit 11 includes a processor such as a CPU (Central Processing Unit).
  • the storage unit 13 includes a storage device, and stores data and computer programs.
  • the storage unit 13 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory and / or a hard disk drive.
  • the storage unit 13 may include removable media.
  • the processor of the control unit 11 executes the computer program stored in the storage device of the storage unit 13 to execute the substrate processing method.
  • a substrate processing apparatus 100 according to a modification of the first embodiment will be described with reference to FIGS. 1, 6 and 7.
  • the modification is different from the first embodiment in that the modification executes the selection process a plurality of times.
  • the differences between the modification example and the first embodiment will be mainly described below.
  • the temperature detection unit 9 detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid. Then, the control unit 11 executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time every predetermined detection time. As a result, according to the modification, even when the temperature of the treatment liquid fluctuates with the passage of time, it is possible to select the appropriate ejection end time information ST according to the temperature of the treatment liquid at every predetermined detection time. As a result, the uniformity of the processing result by the processing liquid can be further improved among the plurality of substrates W.
  • FIG. 6 is a diagram showing the discharge end time table TB.
  • the storage unit 13 stores a plurality of discharge end time tables TB different from one another.
  • a plurality of discharge end time tables TB are respectively defined for a plurality of predetermined detection times (predetermined detection time x1 to predetermined detection time xN).
  • N represents an integer of 2 or more. In a variation, “N” is an integer of 3 or more.
  • the discharge end time table TB1 is determined for the predetermined detection time x1, and a plurality of reference temperatures (in the modification, reference temperature T1 to reference temperature T3 in the modification) are respectively output to the plurality of discharge end time information ST (in the modification) It is associated with time information ST1 to ejection end time information ST3).
  • the discharge end time table TB1 is the same as the discharge end time table TB described with reference to FIG.
  • the discharge end time table TB2 is determined for the predetermined detection time x2, and a plurality of reference temperatures (in the modification, reference temperature T4 to reference temperature T6 in the modification) respectively correspond to a plurality of discharge end time information ST (in the modification, the discharge end) It is associated with time information ST1 to ejection end time information ST3).
  • reference temperature T4 shows temperature T4 on temperature profile PF1 in predetermined detection time x2.
  • the reference temperature T5 indicates the temperature T5 on the temperature profile PF2 at the predetermined detection time x2.
  • the reference temperature T6 indicates the temperature T6 on the temperature profile PF3 at the predetermined detection time x3.
  • the discharge end time table TB3 to the discharge end time table TBN are created based on the temperature profile PF1 to the temperature profile PF3 in the same manner as the discharge end time table TB1 and the discharge end time table TB2.
  • the control unit 11 refers to the discharge end time table TB determined for the predetermined detection time in the selection process, and the discharge end time associated with the reference temperature closest to the temperature of the processing liquid. Select information ST.
  • the number of temperature profiles PF is not particularly limited as long as it is two or more, and in each of the discharge end time tables TB, the number of reference temperatures is also two or more corresponding to the number of temperature profiles PF, It is not particularly limited.
  • FIG. 7 is a flowchart showing a substrate processing method.
  • the substrate processing method is a method of processing a substrate W, and includes steps S11 to S17.
  • step S11 the temperature detection unit 9 starts detection of the temperature of the processing liquid. Then, the temperature detection unit 9 detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid. Step S11 is the same as step S1 (FIG. 5), and corresponds to an example of the “detection step”.
  • step S13 the nozzle 3 starts discharging the processing liquid toward the substrate W.
  • Step S13 is the same as step S3 (FIG. 5), and corresponds to an example of the “ejection step”.
  • step S15 the control unit 11 determines whether the current time has reached any one of a plurality of predetermined detection times.
  • step S15 If a negative determination is made (No in step S15), the process waits in step S15.
  • step S15 when an affirmative determination is made (Yes in step S15), the process proceeds to step S17.
  • step S17 the control unit 11 controls the discharge time of the treatment liquid based on the temperature of the treatment liquid detected at the predetermined detection time so that the integrated heat amount based on the treatment liquid becomes the predetermined value PV.
  • Step S17 is the same as step S7 (FIG. 5), and corresponds to an example of the “control step”.
  • step S17 includes steps S171 to S175.
  • step S171 the control unit 11 executes selection processing based on the temperature of the processing liquid detected at a predetermined detection time. Specifically, the control unit 11 refers to the discharge end time table TB determined for the predetermined detection time among the plurality of discharge end time tables TB (FIG. 6), and is closest to the temperature of the processing liquid. The discharge end time information ST associated with the reference temperature is selected. For example, when it is determined in step S15 that the current time is the predetermined detection time x1, the control unit 11 refers to the discharge end time table TB1 defined for the predetermined detection time x1. Step S171 corresponds to an example of the “selection step”.
  • step S173 the control unit 11 determines whether the current time has reached the discharge end time specified by the selected discharge end time information ST.
  • step S173 If a negative determination is made (No in step S173), the process returns to step S15.
  • step S173 when an affirmative determination is made (Yes in step S173), the process proceeds to step S175.
  • step S175 the nozzle 3 ends the discharge of the treatment liquid.
  • Step S175 is the same as step S78 (FIG. 5), and corresponds to an example of the “end step”.
  • the processor of the control unit 11 executes the computer program stored in the storage device of the storage unit 13 to execute the substrate processing method.
  • FIGS. 8 to 11 A substrate processing apparatus 100A according to a second embodiment of the present invention will be described with reference to FIGS. 8 to 11.
  • the second embodiment differs from the first embodiment and the modifications in that the second embodiment includes a plurality of chambers 1.
  • the differences between the second embodiment and the first embodiment and the modifications are mainly described below.
  • FIGS. 8 to 10 X axis, Y axis and Z axis which are orthogonal to each other are described for easy understanding.
  • the X and Y axes are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
  • FIG. 8 is a plan view showing the substrate processing apparatus 100A.
  • the substrate processing apparatus 100 A includes a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of processing units 22, a plurality of fluid boxes 24, and a processing liquid cabinet 26. , And a control device 28.
  • the control device 28 controls the load port LP, the indexer robot IR, the center robot CR, and the processing unit 22.
  • Control device 28 includes control unit 11 and storage unit 13.
  • Each of the load ports LP stacks and accommodates a plurality of substrates W.
  • the indexer robot IR transports the substrate W between the load port LP and the center robot CR.
  • the center robot CR transports the substrate W between the indexer robot IR and the processing unit 22.
  • Each of the processing units 22 discharges the processing liquid onto the substrate W to process the substrate W.
  • Each of the fluid boxes 24 contains fluidic devices.
  • the treatment solution cabinet 26 contains a treatment solution.
  • the plurality of processing units 22 form a plurality of towers TW (four towers TW in the second embodiment) arranged to surround the center robot CR in a plan view.
  • Each tower TW includes a plurality of processing units 22 (three processing units 22 in the second embodiment) stacked one on top of the other.
  • the plurality of fluid boxes 24 correspond to the plurality of towers TW, respectively.
  • the processing liquid in the processing liquid cabinet 26 is supplied to all the processing units 22 included in the tower TW corresponding to the fluid box 24 via any fluid box 24.
  • FIG. 9 shows the inside of the processing unit 22.
  • the processing unit 22 includes a chamber 1, a nozzle 3, a temperature detection unit 9, a spin chuck 30, a cup 32, a standby pot 34, and a nozzle moving unit 36.
  • the substrate processing apparatus 100A includes a supply pipe 5, a valve 7, a flow meter 38, and a flow control valve 40.
  • the chamber 1 has a substantially box shape.
  • the spin chuck 30 rotates the substrate W around the rotation axis A ⁇ b> 1 while holding the substrate W horizontally in the chamber 1.
  • the cup 32 has a substantially cylindrical shape. The cup 32 receives the processing liquid discharged from the substrate W.
  • the standby pot 34 is disposed below the standby position of the nozzle 3.
  • the standby position indicates a first predetermined position outside the spin chuck 30 with respect to the rotation axis A1.
  • the nozzle moving unit 36 rotates around the rotation axis A2 to move the nozzle 3 horizontally. Specifically, the nozzle moving unit 36 horizontally moves the nozzle 3 between the standby position of the nozzle 3 and the processing position.
  • the processing position indicates a second predetermined position above the substrate W.
  • the supply start and the supply stop of the processing liquid to the nozzle 3 are switched by the valve 7.
  • the flow rate of the processing liquid supplied to the nozzle 3 is detected by the flow meter 38.
  • the flow rate can be changed by the flow rate adjustment valve 40.
  • the valve 7 When the valve 7 is opened, the processing liquid is supplied from the supply pipe 5 to the nozzle 3 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 40. As a result, the processing liquid is discharged from the nozzle 3.
  • the degree of opening indicates the degree to which the flow rate adjustment valve 40 is open.
  • the nozzle 3 performs pre-dispensing processing before discharging the processing liquid onto the substrate W.
  • the pre-dispensing process is a process of discharging the processing liquid toward the standby pot 34 before discharging the processing liquid onto the substrate W.
  • control unit 11 operates in the same manner as the control unit 11 according to the first embodiment described with reference to FIGS. 1 to 5 or the control unit 11 according to the modification described with reference to FIGS. 6 and 7. . Therefore, according to the second embodiment, as in the first embodiment or the modification, the uniformity of the processing result with the processing liquid can be improved among the plurality of substrates W processed one by one in one chamber 1.
  • the substrate processing apparatus 100 ⁇ / b> A includes the nozzle 3, the supply pipe 5, the valve 7, and the temperature detection unit 9 for each chamber 1. Then, the control unit 11 controls the discharge time of the processing liquid so that the integrated heat amount becomes a predetermined value PV for each of the plurality of chambers 1 that respectively accommodate the plurality of substrates W. Therefore, the dependence of the processing result of the substrate W by the processing liquid on the environmental temperature is suppressed over the plurality of chambers 1. As a result, among the plurality of substrates W processed in the plurality of chambers 1, the uniformity of the processing result by the processing liquid can be improved.
  • the uniformity of the processing result with the processing liquid can be improved with respect to a plurality of substrates W among a plurality of chambers 1 in one tower TW.
  • the uniformity of the processing result by the processing liquid can be improved for the plurality of substrates W among the plurality of towers TW.
  • the substrate processing apparatus 100A executes the substrate processing method shown in FIG.
  • the substrate processing apparatus 100A executes the substrate processing method shown in FIG.
  • FIG. 10 is a view showing piping of the substrate processing apparatus 100A.
  • the substrate processing apparatus 100A is provided with a supply pipe 5, a valve 7, a flow meter 38, and a flow control valve 40 for each processing unit 22 in each tower TW.
  • the valve 7, the flow meter 38 and the flow control valve 40 are accommodated in a fluid box 24 corresponding to the tower TW.
  • a part of each supply pipe 5 is accommodated in the fluid box 24, and another part of each supply pipe 5 is accommodated in the chamber 1.
  • the substrate processing apparatus 100A further includes a processing liquid tank 60, a circulation pipe 61, a pump 65, a filter 66, and a temperature controller 67.
  • the treatment liquid tank 60, the pump 65, the filter 66 and the temperature controller 67 are accommodated in the treatment liquid cabinet 26.
  • a part of the circulation pipe 61 is accommodated in the treatment liquid cabinet 26, and another part of the circulation pipe 61 is accommodated in the fluid box 24.
  • the circulation piping 61 includes an upstream piping 62 extending downstream from the processing liquid tank 60, a plurality of individual piping 63 branched from the upstream piping 62, and a downstream piping 64 extending downstream from each individual piping 63 to the processing liquid tank 60. .
  • the upstream end of the upstream pipe 62 is connected to the processing liquid tank 60.
  • the downstream end of the downstream pipe 64 is connected to the processing liquid tank 60.
  • the upstream end of the upstream pipe 62 corresponds to the upstream end of the circulation pipe 61, and the downstream end of the downstream pipe 64 corresponds to the downstream end of the circulation pipe 61.
  • Each individual pipe 43 extends from the downstream end of the upstream pipe 62 to the upstream end of the downstream pipe 64.
  • the plurality of individual pipes 63 correspond to the plurality of towers TW, respectively.
  • Three supply pipes 5 corresponding to the three processing units 22 included in one tower TW are connected to one individual pipe 63.
  • the pump 65 sends the processing liquid in the processing liquid tank 60 to the circulation pipe 61.
  • the filter 66 removes foreign matter from the processing liquid flowing through the circulation pipe 61.
  • the temperature controller 67 adjusts the temperature of the processing liquid in the processing liquid tank 60.
  • the temperature controller 67 is, for example, a heater that heats the processing solution.
  • the pump 65, the filter 66, and the temperature controller 67 are disposed in the upstream pipe 62.
  • the treatment liquid in the treatment liquid tank 60 is sent to the upstream pipe 62 by the pump 65, and flows from the upstream pipe 62 to the plurality of individual pipes 63.
  • the processing liquid in the individual piping 63 flows to the downstream piping 64 and returns from the downstream piping 64 to the processing liquid tank 60.
  • the processing liquid in the processing liquid tank 60 is heated by the temperature controller 67 so as to reach a specific temperature equal to or higher than the specified temperature TM and fed to the upstream pipe 62. Therefore, the temperature of the processing liquid circulating in the circulation pipe 61 is maintained at a specific temperature that is equal to or higher than the specified temperature TM.
  • the processing liquid maintained at the specific temperature in the circulation pipe 61 is supplied to the supply pipe 5.
  • the uniformity of the processing result of the processing liquid among the plurality of substrates W can be obtained by the simple control of controlling the discharge time of the processing liquid so that the integrated heat quantity becomes the predetermined value PV. It can improve.
  • FIG. 11 is a diagram showing temperature transition of the processing liquid in the substrate processing apparatus 100A.
  • the horizontal axis indicates time, and the vertical axis indicates the temperature of the processing solution.
  • the temperature of the treatment liquid indicates the temperature of the treatment liquid detected by the temperature detection unit 9.
  • Curve B1 shows the temperature of the processing solution, and line B2 shows the state of the valve 7.
  • the valve 7 is switched from the closed state to the open state with the nozzle 3 positioned at the standby position. As a result, pre-dispensing processing is started. Then, at time t11, the valve 7 is closed from the open state. As a result, the pre-dispensing process ends. At time t11, the nozzle 3 moves from the standby position toward the processing position. Then, when the nozzle 3 reaches the processing position at time t12, the valve 7 is changed from the closed state to the open state. As a result, the processing liquid is discharged toward the substrate W. Furthermore, at time t13, the valve 7 is switched from the closed state to the open state. As a result, the processing of one substrate W is completed.
  • the temperature of the processing liquid becomes equal to or higher than the specified temperature TM before the discharge of the processing liquid onto the substrate W by the pre-dispensing processing. Then, after the pre-dispensing process, in the period after time t12, the control unit 11 controls the valve 7 based on the temperature of the processing liquid so that the integrated heat amount based on the processing liquid becomes the predetermined value PV. Control the discharge time of
  • the control unit 11 refers to the discharge end time table TB. However, as long as the discharge time is controlled so that the integrated heat amount becomes the predetermined value PV, the control unit 11 may determine the discharge end time information ST with reference to the temperature profile PF. In this case, the storage unit 13 stores a plurality of temperature profiles PF.
  • the control unit 11 sets each of the temperature profiles PF1 to PF3 to the temperature of the processing liquid detected at the predetermined detection time x1 (hereinafter sometimes referred to as “temperature Td”). This is compared with the temperatures T1 to T3 at the predetermined detection time x1 of Then, the control unit 11 selects a temperature closest to the temperature Td (for example, the temperature T1) from the temperatures T1 to T3. Furthermore, the control unit 11 selects the temperature profile PF (for example, the temperature profile PF1) having the selected temperature. Then, the control unit 11 determines the time from the start time (for example, t0) of the selected temperature profile PF to the end time (for example, te1) as the discharge end time (that is, discharge end time information ST).
  • start time for example, t0
  • the end time for example, te1
  • the discharge end time indicated by the discharge end time information ST indicates the time from the start time to the end time of the temperature profile PF.
  • the discharge end time can be arbitrarily defined as long as the discharge end time of the treatment liquid can be specified.
  • the discharge end time may be a time from a predetermined detection time to an end time of the temperature profile PF, or may be an end time of the temperature profile PF.
  • valve 7 is disposed outside the chamber 1, but the supply start and the supply stop of the processing liquid to the nozzle 3 can be realized.
  • the valve 7 may be disposed inside the chamber 1.
  • a heater may be disposed in the supply pipe 5. This is to heat the processing liquid in the supply pipe 5. The heater may be disposed inside the chamber 1 or may be disposed outside the chamber 1.
  • the present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate, and has industrial applicability.

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Abstract

The present invention provides a substrate treatment device (100) and a substrate treatment method. The substrate treatment device (100) is provided with a chamber (1), a nozzle (3), a supply pipe (5), a valve (7), a temperature detection unit (9), and a control unit (11). The nozzle (3) discharges a treatment liquid toward a substrate (W). The supply pipe (5) supplies the treatment liquid to the nozzle (3). The valve (7) can be switched to be in an open state wherein the treatment liquid flowing in the supply pipe (5) toward the nozzle (3) passes, or a closed state wherein the treatment liquid supply from the supply pipe (5) to the nozzle (3) stops. The temperature detection unit (9) detects the temperature of the treatment liquid in the chamber (1). The control unit (11) controls the valve (7) on the basis of the temperature of the treatment liquid, and controls treatment liquid discharge time so that an integrated heat amount based on the treatment liquid becomes a predetermined value (PV). The integrated heat amount indicates a physical amount indicating the integrated value of the heat amount of the treatment liquid to be applied to the substrate (W).

Description

基板処理装置及び基板処理方法Substrate processing apparatus and substrate processing method
　本発明は、基板を処理する基板処理装置及び基板処理方法に関する。 The present invention relates to a substrate processing apparatus for processing a substrate and a substrate processing method.
　特許文献１に記載されている基板処理装置は、基板を１枚ずつ処理する枚葉型である。そして、基板処理装置は、室温のリン酸水溶液と、リン酸水溶液の沸点よりも高い温度を有する高温の硫酸水溶液とを供給配管内で混合して、リン酸と硫酸と水との混合液を生成する。硫酸水溶液と混合されたリン酸水溶液は、硫酸水溶液の熱によって加熱される。さらに、リン酸水溶液と硫酸水溶液とが混合されることにより、希釈熱が発生する。そして、硫酸水溶液と混合されたリン酸水溶液は、硫酸水溶液の熱だけでなく、希釈熱によっても加熱される。従って、混合液に含まれるリン酸水溶液が沸点付近まで加熱され、沸点付近のリン酸水溶液を含む混合液（以下、「処理液」と記載する。）が基板に吐出される。その結果、シリコン窒化膜が形成された基板をエッチング処理する場合に、高い選択比と、高いエッチングレートとを得ることができる。エッチング処理が所定時間にわたって行われると、バルブが閉じられて、ノズルからの混合液の吐出が停止する。 The substrate processing apparatus described in Patent Document 1 is a single-wafer type that processes substrates one by one. Then, the substrate processing apparatus mixes a room temperature phosphoric acid aqueous solution and a high temperature sulfuric acid aqueous solution having a temperature higher than the boiling point of the phosphoric acid aqueous solution in the supply pipe, and mixes the mixed solution of phosphoric acid, sulfuric acid and water. Generate The aqueous phosphoric acid solution mixed with the aqueous sulfuric acid solution is heated by the heat of the aqueous sulfuric acid solution. Furthermore, heat of dilution is generated by mixing the aqueous phosphoric acid solution and the aqueous sulfuric acid solution. Then, the phosphoric acid aqueous solution mixed with the sulfuric acid aqueous solution is heated not only by the heat of the sulfuric acid aqueous solution but also by the dilution heat. Therefore, the phosphoric acid aqueous solution contained in the liquid mixture is heated to near the boiling point, and a liquid mixture containing the phosphoric acid aqueous solution near the boiling point (hereinafter referred to as "processing liquid") is discharged onto the substrate. As a result, when the substrate on which the silicon nitride film is formed is etched, a high selectivity and a high etching rate can be obtained. When the etching process is performed for a predetermined time, the valve is closed to stop the discharge of the mixed liquid from the nozzle.
特開２０１２－７４６０１号公報JP 2012-74601 A
　しかしながら、特許文献１に記載された基板処理装置では、処理中の基板の周囲環境の温度（以下、「環境温度」と記載する。）の変動によって、複数の基板間で、処理結果に若干のバラツキが生じる可能性がある。 However, in the substrate processing apparatus described in Patent Document 1, due to the fluctuation of the temperature of the ambient environment of the substrate during processing (hereinafter referred to as "environmental temperature"), the processing result is slightly different among a plurality of substrates. Variations may occur.
　具体的には、処理中の基板の環境温度の変動が、処理液の温度に若干の影響を及ぼす可能性がある。特に、高温の処理液を使用する場合は、環境温度と処理液の温度との差が大きいため、環境温度の変動の影響は、高温でない処理液を使用する場合よりも大きくなる。 Specifically, fluctuations in the ambient temperature of the substrate being processed may have a slight effect on the temperature of the processing solution. In particular, when a high temperature treatment liquid is used, the influence of the fluctuation of the environmental temperature is greater than that when a non-high temperature treatment liquid is used because the difference between the ambient temperature and the temperature of the treatment liquid is large.
　環境温度の変動が処理液の温度に若干でも影響を及ぼすと、複数の基板間で、処理結果に若干のバラツキが生じる可能性がある。特に、近年、処理結果の若干のバラツキでさえも抑制することを要求される場合がある。換言すれば、複数の基板間で、処理結果の均一性の更なる向上が要求される場合がある。 If the fluctuation of the environmental temperature has a slight influence on the temperature of the processing liquid, there may be some dispersion in processing results among a plurality of substrates. In particular, in recent years, even slight variations in processing results may be required to be suppressed. In other words, there may be a need to further improve the uniformity of processing results among a plurality of substrates.
　例えば、一般的に、基板処理装置では、処理液を貯蔵する処理液タンク、および、処理液を基板に供給する準備段階において処理液を循環させる循環配管において、処理液を所定の温度に調整する措置が行われたり、当該処理液の流量および吐出時間を処理工程に応じて所定の値に設定する措置が行われたりしている。しかしながら、例えば環境温度の変動に伴い、実際に基板に投入された処理液の温度は微妙に変動する。その結果、従来装置、特に高温の処理液による処理を行う従来装置においては、処理液タンクおよび循環配管の温度調整を行ったり、処理液の流量および吐出時間の制御を行ったりするにも関わらず、複数の基板間で処理液による処理結果にバラツキが生じるという問題が生じていた。 For example, in general, in a substrate processing apparatus, the processing liquid is adjusted to a predetermined temperature in a processing liquid tank for storing the processing liquid and a circulation pipe for circulating the processing liquid at a preparation stage of supplying the processing liquid to the substrate. Measures have been taken, and measures have been taken to set the flow rate and discharge time of the treatment liquid to predetermined values according to the treatment process. However, for example, with the change of the environmental temperature, the temperature of the processing solution actually supplied to the substrate slightly changes. As a result, in the conventional apparatus, particularly in the conventional apparatus that performs treatment with a high temperature treatment liquid, the temperature adjustment of the treatment liquid tank and the circulation pipe is performed, and the flow rate and discharge time of the treatment liquid are controlled. There has been a problem that the processing results of the processing liquid vary among the plurality of substrates.
　そこで、本願の発明者は、積算熱量に着目して、複数の基板間で処理結果にバラツキが生じる原因を詳細に検討した。積算熱量は、基板に投入される処理液の熱量の積算値を表す物理量を示す。具体的には、積算熱量は、処理液の温度の時間積分値によって表される。 Therefore, the inventor of the present application has examined in detail the causes of variations in processing results among a plurality of substrates, focusing on the accumulated heat amount. The integrated heat quantity indicates a physical quantity that represents the integrated value of the heat quantity of the processing liquid to be introduced into the substrate. Specifically, the integrated heat quantity is represented by a time integral value of the temperature of the treatment liquid.
　図１２を参照して、積算熱量について説明する。図１２は、一般的な基板処理装置での処理液の温度推移を示す図である。図１２に示すように、横軸は時間を示し、縦軸は処理液の温度を示す。時刻ｔ０は処理液の吐出開始時刻を示し、時刻ｔｅは処理液の吐出終了時刻を示す。温度Ｔｒは環境温度を示す。 The accumulated heat amount will be described with reference to FIG. FIG. 12 is a diagram showing the temperature transition of the processing liquid in a general substrate processing apparatus. As shown in FIG. 12, the horizontal axis indicates time, and the vertical axis indicates the temperature of the processing solution. The time t0 indicates the discharge start time of the treatment liquid, and the time te indicates the discharge end time of the treatment liquid. The temperature Tr indicates an environmental temperature.
　曲線Ｃ１は、１枚目の基板を処理している時の処理液の温度推移を示す。曲線Ｃ２は、２枚目の基板を処理している時の処理液の温度推移を示す。曲線Ｃ３は、３枚目の基板を処理している時の処理液の温度推移を示す。 Curve C1 shows the temperature transition of the processing liquid when processing the first substrate. Curve C2 shows the temperature transition of the processing solution when processing the second substrate. Curve C3 shows the temperature transition of the processing solution when processing the third substrate.
　１枚目～３枚目の基板の処理時間は、一定（ｔｅ－ｔ０）である。そして、曲線Ｃ１及び曲線Ｃ２に示すように、１枚目の基板と２枚目の基板とで、処理液の温度推移は略同一である。従って、１枚目の基板と２枚目の基板とで、積算熱量は、略同一である。その結果、１枚目の基板と２枚目の基板とで、処理結果は略等しい。 The processing time of the first to third substrates is constant (te−t0). Then, as shown by the curves C1 and C2, the temperature transition of the processing liquid is substantially the same between the first substrate and the second substrate. Therefore, the accumulated heat amount is substantially the same between the first substrate and the second substrate. As a result, the processing results for the first substrate and the second substrate are approximately equal.
　しかしながら、曲線Ｃ３に示すように、環境温度の変動の影響を受けたために、ある時間帯において、３枚目の基板に対する処理液の温度が、１枚目の基板に対する処理液の温度よりも若干低い。従って、３枚目の基板に対する積算熱量は、１枚目の基板に対する積算熱量よりも若干小さい。更に、処理結果は積算熱量に依存する。その結果、１枚目の基板と３枚目の基板とで、処理結果が若干異なる可能性がある。 However, as shown by the curve C3, the temperature of the processing liquid for the third substrate is slightly higher than the temperature of the processing liquid for the first substrate in a certain time zone because of the influence of the fluctuation of the environmental temperature. Low. Therefore, the integrated heat amount for the third substrate is slightly smaller than the integrated heat amount for the first substrate. Furthermore, the processing result depends on the integrated heat quantity. As a result, the processing results may be slightly different between the first substrate and the third substrate.
　以上、図１２を参照して説明したように、本願の発明者は、環境温度の変動の影響によって積算熱量が複数の基板間で異なると、複数の基板間で処理結果に若干のバラツキが生じる可能性があることを突き止めた。 As described above with reference to FIG. 12, the inventor of the present application has found that when the integrated heat quantity is different among the plurality of substrates due to the influence of the change of the environmental temperature, the processing results are slightly dispersed among the plurality of substrates I found out that there is a possibility.
　そこで、本願の発明者は、積算熱量の観点から、基板処理装置及び基板処理方法について鋭意研究を行った。 Therefore, the inventor of the present application has intensively studied the substrate processing apparatus and the substrate processing method from the viewpoint of the integrated heat quantity.
　本発明は上記課題に鑑みてなされたものであり、その目的は、複数の基板間で、処理液による処理結果の均一性を向上できる基板処理装置及び基板処理方法を提供することにある。 The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of improving the uniformity of the processing result by the processing liquid among a plurality of substrates.
　本発明の一局面によれば、基板処理装置は、基板を処理する。基板処理装置は、チャンバーと、ノズルと、供給配管と、バルブと、温度検出部と、制御部とを備える。チャンバーは、前記基板を収容する。ノズルは、前記チャンバー内に配置され、前記基板に向けて処理液を吐出する。供給配管は、前記ノズルに前記処理液を供給する。バルブは、前記ノズルに向かって前記供給配管内を流れる前記処理液を通過させる開状態と、前記供給配管から前記ノズルへの前記処理液の供給を停止する閉状態とに切り替え可能である。温度検出部は、前記チャンバー内の前記処理液の温度を検出する。制御部は、前記処理液の温度に基づいて前記バルブを制御して、前記処理液に基づく積算熱量が所定値になるように前記処理液の吐出時間を制御する。前記積算熱量は、前記基板に投入される前記処理液の熱量の積算値を表す物理量を示す。 According to one aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a chamber, a nozzle, a supply pipe, a valve, a temperature detection unit, and a control unit. The chamber contains the substrate. The nozzle is disposed in the chamber and discharges the processing solution toward the substrate. The supply pipe supplies the processing liquid to the nozzle. The valve is switchable between an open state in which the treatment liquid flowing in the supply pipe is passed toward the nozzle and a closed state in which the supply of the treatment liquid from the supply pipe to the nozzle is stopped. The temperature detection unit detects the temperature of the processing liquid in the chamber. The control unit controls the valve based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value. The integrated heat amount indicates a physical quantity that represents an integrated value of the heat amount of the processing liquid supplied to the substrate.
　本発明の基板処理装置において、前記制御部は、前記バルブが前記開状態から前記閉状態になるように、吐出終了時間情報に基づいて前記バルブを制御することが好ましい。前記吐出終了時間情報は、温度プロファイルに基づいて予め規定され、前記処理液の吐出終了時間を示すことが好ましい。前記温度プロファイルは、前記処理液と同じ処理液を前記基板と同じ基板に吐出したときに、前記同じ処理液の温度の時間推移を表すことが好ましい。前記吐出終了時間情報の示す前記吐出終了時間は、前記同じ処理液の温度の時間積分値が前記所定値と等しくなる時間を示すことが好ましい。 In the substrate processing apparatus of the present invention, preferably, the control unit controls the valve based on discharge end time information so that the valve changes from the open state to the closed state. It is preferable that the discharge end time information is previously defined based on a temperature profile and indicates a discharge end time of the treatment liquid. It is preferable that the temperature profile represents a time transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is discharged onto the same substrate as the substrate. It is preferable that the discharge end time indicated by the discharge end time information indicates a time in which a time integral value of the temperature of the same processing liquid is equal to the predetermined value.
　本発明の基板処理装置において、前記制御部は、前記処理液を前記基板に向けて吐出している期間中に選択処理を実行することが好ましい。前記選択処理は、複数の前記吐出終了時間情報から、前記処理液の温度に対応する吐出終了時間情報を選択する処理を示すことが好ましい。前記制御部は、前記選択した吐出終了時間情報に基づいて前記バルブを制御して、前記バルブを前記開状態から前記閉状態にすることが好ましい。前記複数の吐出終了時間情報は、それぞれ、互いに異なる複数の前記温度プロファイルに基づいて予め規定されていることが好ましい。 In the substrate processing apparatus of the present invention, it is preferable that the control unit execute the selection processing during a period in which the processing liquid is discharged toward the substrate. It is preferable that the selection process indicates a process of selecting discharge end time information corresponding to the temperature of the processing liquid from a plurality of the discharge end time information. Preferably, the control unit controls the valve based on the selected discharge end time information to change the valve from the open state to the closed state. The plurality of pieces of ejection end time information are preferably defined in advance based on a plurality of mutually different temperature profiles.
　本発明の基板処理装置において、前記制御部は、前記選択処理を１回だけ実行することが好ましい。 In the substrate processing apparatus of the present invention, preferably, the control unit executes the selection process only once.
　本発明の基板処理装置において、前記温度検出部は、前記処理液を吐出中の複数の所定検出時刻で前記処理液の温度を検出することが好ましい。前記制御部は、前記所定検出時刻ごとに、前記所定検出時刻で検出された前記処理液の温度に基づいて前記選択処理を実行することが好ましい。 In the substrate processing apparatus of the present invention, preferably, the temperature detection unit detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid. Preferably, the control unit executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time, at each predetermined detection time.
　本発明の基板処理装置において、前記処理液は、燐酸、又は、硫酸過酸化水素水混合液を含むことが好ましい。 In the substrate processing apparatus of the present invention, the processing solution preferably contains a mixture of phosphoric acid or sulfuric acid / hydrogen peroxide solution.
　本発明の基板処理装置において、複数の前記チャンバーが備えられることが好ましい。前記チャンバーごとに、前記ノズルと前記供給配管と前記バルブと前記温度検出部とが備えられることが好ましい。前記制御部は、前記チャンバーごとに、前記積算熱量が前記所定値になるように前記処理液の吐出時間を制御することが好ましい。 In the substrate processing apparatus of the present invention, preferably a plurality of the chambers are provided. Preferably, the nozzle, the supply pipe, the valve, and the temperature detection unit are provided for each of the chambers. It is preferable that the control unit controls, for each of the chambers, the discharge time of the processing liquid so that the integrated heat amount becomes the predetermined value.
　本発明の他の局面によれば、基板処理方法は、基板を処理する方法である。基板処理方法は、チャンバーに収容された前記基板に向けて処理液を吐出する吐出工程と、前記チャンバー内の前記処理液の温度を検出する検出工程と、前記処理液の温度に基づいて、前記処理液に基づく積算熱量が所定値になるように前記処理液の吐出時間を制御する制御工程とを含む。前記積算熱量は、前記基板に投入される前記処理液の熱量の積算値を表す物理量を示す。 According to another aspect of the present invention, a substrate processing method is a method of processing a substrate. The substrate processing method comprises the steps of: discharging a processing solution toward the substrate accommodated in a chamber; detecting the temperature of the processing solution in the chamber; and detecting the temperature of the processing solution. And a control step of controlling the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value. The integrated heat amount indicates a physical quantity that represents an integrated value of the heat amount of the processing liquid supplied to the substrate.
　本発明の基板処理方法において、前記制御工程は、吐出終了時間情報に基づいて前記処理液の吐出を終了する終了工程を含むことが好ましい。前記吐出終了時間情報は、温度プロファイルに基づいて予め規定され、前記処理液の吐出終了時間を示すことが好ましい。前記温度プロファイルは、前記処理液と同じ処理液を前記基板と同じ基板に吐出したときに、前記同じ処理液の温度の時間推移を表すことが好ましい。前記吐出終了時間情報の示す前記吐出終了時間は、前記同じ処理液の温度の時間積分値が前記所定値と等しくなる時間を示すことが好ましい。 In the substrate processing method of the present invention, the control step preferably includes an end step of ending the discharge of the processing liquid based on discharge end time information. It is preferable that the discharge end time information is previously defined based on a temperature profile and indicates a discharge end time of the treatment liquid. It is preferable that the temperature profile represents a time transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is discharged onto the same substrate as the substrate. It is preferable that the discharge end time indicated by the discharge end time information indicates a time in which a time integral value of the temperature of the same processing liquid is equal to the predetermined value.
　本発明の基板処理方法において、前記制御工程は、前記処理液を前記基板に向けて吐出している期間中に選択処理を実行する選択工程をさらに含むことが好ましい。前記選択処理は、複数の前記吐出終了時間情報から、前記処理液の温度に対応する吐出終了時間情報を選択する処理を示すことが好ましい。前記終了工程では、前記選択した吐出終了時間情報に基づいて前記処理液の吐出を終了することが好ましい。前記複数の吐出終了時間情報は、それぞれ、互いに異なる複数の前記温度プロファイルに基づいて予め規定されていることが好ましい。 In the substrate processing method of the present invention, preferably, the control step further includes a selection step of executing a selection processing during a period in which the processing liquid is discharged toward the substrate. It is preferable that the selection process indicates a process of selecting discharge end time information corresponding to the temperature of the processing liquid from a plurality of the discharge end time information. In the termination step, the ejection of the processing liquid is preferably terminated based on the selected ejection termination time information. The plurality of pieces of ejection end time information are preferably defined in advance based on a plurality of mutually different temperature profiles.
　本発明の基板処理方法において、前記選択工程では、前記選択処理を１回だけ実行することが好ましい。 In the substrate processing method of the present invention, preferably, in the selection step, the selection processing is performed only once.
　本発明の基板処理方法において、前記検出工程では、前記処理液を吐出中の複数の所定検出時刻で前記処理液の温度を検出することが好ましい。前記選択工程では、前記所定検出時刻ごとに、前記所定検出時刻で検出された前記処理液の温度に基づいて前記選択処理を実行することが好ましい。 In the substrate processing method of the present invention, preferably, in the detection step, the temperature of the processing liquid is detected at a plurality of predetermined detection times during discharge of the processing liquid. In the selection step, preferably, the selection process is performed based on the temperature of the processing liquid detected at the predetermined detection time, at each predetermined detection time.
　本発明の基板処理方法において、前記処理液は、燐酸、又は、硫酸過酸化水素水混合液を含むことが好ましい。 In the substrate processing method of the present invention, it is preferable that the processing liquid contains phosphoric acid or a mixed solution of sulfuric acid and hydrogen peroxide.
　本発明の基板処理方法において、前記制御工程では、複数の前記基板をそれぞれ収容する複数の前記チャンバーごとに、前記積算熱量が前記所定値になるように前記処理液の吐出時間を制御することが好ましい。 In the substrate processing method of the present invention, in the control step, the discharge time of the processing liquid may be controlled such that the integrated heat quantity becomes the predetermined value for each of the plurality of chambers accommodating the plurality of substrates. preferable.
　本発明によれば、複数の基板間で、処理液による処理結果の均一性を向上できる。 According to the present invention, it is possible to improve the uniformity of the processing result by the processing liquid among a plurality of substrates.
本発明の実施形態１に係る基板処理装置を示す図である。It is a figure which shows the substrate processing apparatus which concerns on Embodiment 1 of this invention. 実施形態１に係る基板処理装置での処理液の温度推移を示す図である。FIG. 5 is a view showing temperature transition of a processing liquid in the substrate processing apparatus according to the first embodiment. 実施形態１に係る基板処理装置の温度プロファイルを示す図である。FIG. 2 is a view showing a temperature profile of the substrate processing apparatus according to the first embodiment. 実施形態１に係る基板処理装置の吐出終了時間テーブルを示す図である。FIG. 7 is a view showing a discharge end time table of the substrate processing apparatus according to the first embodiment. 実施形態１に係る基板処理装置が実行する基板処理方法を示すフローチャートである。It is a flowchart which shows the substrate processing method which the substrate processing apparatus which concerns on Embodiment 1 performs. 実施形態１の変形例に係る基板処理装置の吐出終了時間テーブルを示す図である。FIG. 16 is a view showing a discharge end time table of the substrate processing apparatus according to a modification of the first embodiment. 変形例に係る基板処理装置が実行する基板処理方法を示すフローチャートである。It is a flowchart which shows the substrate processing method which the substrate processing apparatus which concerns on a modification performs. 本発明の実施形態２に係る基板処理装置を示す平面図である。It is a top view which shows the substrate processing apparatus which concerns on Embodiment 2 of this invention. 実施形態２に係る基板処理装置の処理ユニットの内部を示す図である。FIG. 8 is a view showing the inside of a processing unit of the substrate processing apparatus according to the second embodiment. 実施形態２に係る基板処理装置の配管を示す図である。FIG. 7 is a view showing piping of a substrate processing apparatus according to a second embodiment. 実施形態２に係る基板処理装置での処理液の温度推移を示す図である。FIG. 7 is a view showing temperature transition of a processing liquid in the substrate processing apparatus according to Embodiment 2. 一般的な基板処理装置での処理液の温度推移を示す図である。It is a figure which shows the temperature transition of the process liquid in a common substrate processing apparatus.
　以下、本発明の実施形態について、図面を参照しながら説明する。なお、図中、同一または相当部分については同一の参照符号を付して説明を繰り返さない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference characters and description thereof will not be repeated.
　（実施形態１）
　図１～図５を参照して、本発明の実施形態１に係る基板処理装置１００について説明する。図１は、基板処理装置１００を示す図である。図１に示すように、基板処理装置１００は基板Ｗを処理する。具体的には、基板処理装置１００は、基板Ｗを１枚ずつ処理する枚葉型である。基板処理装置１００は、チャンバー１と、ノズル３と、供給配管５と、バルブ７と、温度検出部９と、制御部１１と、記憶部１３とを備える。 (Embodiment 1)
A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a view showing a substrate processing apparatus 100. As shown in FIG. As shown in FIG. 1, the substrate processing apparatus 100 processes a substrate W. Specifically, the substrate processing apparatus 100 is a single wafer type that processes the substrates W one by one. The substrate processing apparatus 100 includes a chamber 1, a nozzle 3, a supply pipe 5, a valve 7, a temperature detection unit 9, a control unit 11, and a storage unit 13.
　チャンバー１は基板Ｗを収容する。基板Ｗは、実施形態１では、略円板状である。ノズル３はチャンバー１内に配置される。ノズル３は、基板Ｗに向けて処理液を吐出する。処理液は薬液である。例えば、基板処理装置１００が、シリコン窒化膜が形成された基板に対してエッチング処理を実行する場合は、処理液は燐酸を含む。例えば、基板処理装置１００が、レジストの除去処理を実行する場合は、処理液は硫酸過酸化水素水混合液（ｓｕｌｆｕｒｉｃ　ａｃｉｄ／ｈｙｄｒｏｇｅｎ　ｐｅｒｏｘｉｄｅ　ｍｉｘｔｕｒｅ：ＳＰＭ）を含む。燐酸又はＳＰＭを含む処理液は、高温で使用される処理液の一例である。 The chamber 1 contains a substrate W. The substrate W has a substantially disc shape in the first embodiment. The nozzle 3 is disposed in the chamber 1. The nozzle 3 discharges the processing liquid toward the substrate W. The treatment liquid is a chemical solution. For example, when the substrate processing apparatus 100 performs an etching process on a substrate on which a silicon nitride film is formed, the processing solution contains phosphoric acid. For example, when the substrate processing apparatus 100 executes a resist removal process, the process liquid contains a sulfuric acid / hydrogen peroxide mixture (SPM). The processing solution containing phosphoric acid or SPM is an example of the processing solution used at high temperature.
　供給配管５はノズル３に接続される。供給配管５はノズル３に処理液を供給する。供給配管５に供給される処理液の温度は、室温よりも高い規定温度（以下、「規定温度ＴＭ」と記載する。）以上の特定温度に維持されている。規定温度ＴＭは、基板Ｗに対して規定の処理レート（例えば、規定のエッチングレート又は規定の対象物除去レート）を実現できる温度を示す。換言すれば、規定温度ＴＭは、基板Ｗに対して、規定時間内に規定の処理結果（例えば、規定のエッチング量又は規定の対象物除去量）を達成できる温度を示す。規定温度ＴＭは、燐酸を含む処理液では、例えば、１７５℃である。規定温度ＴＭは、ＳＰＭを含む処理液では、例えば、２００℃である。 The supply pipe 5 is connected to the nozzle 3. The supply pipe 5 supplies the processing liquid to the nozzle 3. The temperature of the processing liquid supplied to the supply pipe 5 is maintained at a specific temperature higher than a specified temperature (hereinafter, referred to as "specified temperature TM") higher than room temperature. The prescribed temperature TM indicates a temperature at which a prescribed processing rate (for example, a prescribed etching rate or a prescribed object removal rate) can be realized for the substrate W. In other words, the prescribed temperature TM indicates a temperature at which the substrate W can achieve a prescribed processing result (for example, a prescribed etching amount or a prescribed target removal amount) within a prescribed time. The specified temperature TM is, for example, 175 ° C. in the treatment liquid containing phosphoric acid. The specified temperature TM is, for example, 200 ° C. in the treatment liquid containing SPM.
　バルブ７は供給配管５に配置される。バルブ７は、開閉バルブであり、開状態と閉状態とに切り替え可能である。開状態とは、ノズル３に向かって供給配管５内を流れる処理液を通過させる状態のことである。閉状態とは、供給配管５からノズル３への処理液の供給を停止する状態のことである。 The valve 7 is arranged in the supply line 5. The valve 7 is an open / close valve, which can be switched between an open state and a closed state. The open state is a state in which the processing liquid flowing in the supply pipe 5 toward the nozzle 3 is allowed to pass. In the closed state, the supply of the processing liquid from the supply pipe 5 to the nozzle 3 is stopped.
　温度検出部９は、チャンバー１内の処理液の温度を検出する。実施形態１では、温度検出部９は、供給配管５内の処理液の温度を検出する。具体的には、温度検出部９の測温部（不図示）が供給配管５内の処理液に接触して、処理液の温度を検出する。温度検出部９は、ノズル３の近傍で供給配管５内の処理液の温度を検出することが好ましい。温度検出部９が温度を検出する位置がノズル３に近いほど、検出された温度が、基板Ｗ上の処理液の温度に近くなるからである。 The temperature detection unit 9 detects the temperature of the processing liquid in the chamber 1. In the first embodiment, the temperature detection unit 9 detects the temperature of the processing liquid in the supply pipe 5. Specifically, the temperature measuring unit (not shown) of the temperature detection unit 9 contacts the processing liquid in the supply pipe 5 to detect the temperature of the processing liquid. The temperature detection unit 9 preferably detects the temperature of the processing liquid in the supply pipe 5 in the vicinity of the nozzle 3. This is because the detected temperature becomes closer to the temperature of the processing liquid on the substrate W as the position where the temperature detection unit 9 detects the temperature is closer to the nozzle 3.
　例えば、温度検出部９は温度センサーを含む。温度センサーは、例えば、熱電対及び計測器を含む。具体的には、熱電対が供給配管５に挿入される。そして、熱電対が、供給配管５内の処理液の温度を検出して、温度に対応する電圧信号を計測器に出力する。計測器は、電圧信号を温度に変換して、温度を示す情報を制御部１１に出力する。計測器は、チャンバー１内に配置されていてもよいし、チャンバー１外に配置されていてもよい。熱電対の測温接点は、供給配管５内において、ノズル３の近傍に配置することが好ましい。測温接点は温度検出部９の測温部に相当する。なお、温度検出部９は、供給配管５の外面の温度を検出することによって、処理液の温度を間接的に検出してもよい。また、例えば、温度検出部９は、ノズル３の内部で処理液の温度を検出してもよいし、ノズル３の外面の温度を検出することによって処理液の温度を間接的に検出してもよい。 For example, the temperature detection unit 9 includes a temperature sensor. The temperature sensor includes, for example, a thermocouple and a meter. Specifically, a thermocouple is inserted into the supply pipe 5. And a thermocouple detects the temperature of the process liquid in supply piping 5, and outputs the voltage signal corresponding to temperature to a measuring device. The measuring device converts the voltage signal into a temperature and outputs information indicating the temperature to the control unit 11. The measuring instrument may be disposed in the chamber 1 or may be disposed outside the chamber 1. It is preferable to arrange the temperature measurement contact of the thermocouple in the vicinity of the nozzle 3 in the supply pipe 5. The temperature measurement contact corresponds to the temperature measurement unit of the temperature detection unit 9. The temperature detection unit 9 may detect the temperature of the processing liquid indirectly by detecting the temperature of the outer surface of the supply pipe 5. Also, for example, the temperature detection unit 9 may detect the temperature of the treatment liquid inside the nozzle 3 or indirectly detect the temperature of the treatment liquid by detecting the temperature of the outer surface of the nozzle 3 Good.
　温度検出部９がチャンバー１内で処理液の温度を検出する限りにおいては、供給配管５以外の位置及びノズル３以外の位置で処理液の温度を検出してもよい。例えば、温度検出部９は、処理液が基板Ｗに吐出された後に基板Ｗ上の処理液の温度を検出してもよい。基板Ｗ上の処理液の温度を検出する場合、例えば、温度検出部９は放射温度計を含む。放射温度計は、基板Ｗに吐出された処理液から放射される赤外線又は可視光線の強度を測定して、基板Ｗに吐出された処理液の温度を測定する。そして、放射温度計は、処理液の温度を示す信号を制御部１１に出力する。 As long as the temperature detection unit 9 detects the temperature of the processing liquid in the chamber 1, the temperature of the processing liquid may be detected at a position other than the supply pipe 5 and a position other than the nozzle 3. For example, the temperature detection unit 9 may detect the temperature of the processing liquid on the substrate W after the processing liquid is discharged onto the substrate W. When detecting the temperature of the processing liquid on the substrate W, for example, the temperature detection unit 9 includes a radiation thermometer. The radiation thermometer measures the intensity of infrared light or visible light emitted from the processing liquid discharged onto the substrate W, and measures the temperature of the processing liquid discharged onto the substrate W. Then, the radiation thermometer outputs a signal indicating the temperature of the treatment liquid to the control unit 11.
　制御部１１は、基板Ｗに向けて処理液を吐出している期間中に温度検出部９によって検出された処理液の温度に基づいて、処理液の吐出時間を制御する。具体的には、制御部１１は、処理液の温度に基づいてバルブ７を制御して、処理液に基づく積算熱量が所定値ＰＶになるように処理液の吐出時間を制御する。制御部１１の制御によって「積算熱量が所定値になること」は、「積算熱量が所定値に略等しくなること」を示す。所定値ＰＶは、処理液による規定の処理結果を達成できるように、例えば、実験的及び／又は経験的に定められる。 The control unit 11 controls the discharge time of the processing liquid based on the temperature of the processing liquid detected by the temperature detection unit 9 while discharging the processing liquid toward the substrate W. Specifically, the control unit 11 controls the valve 7 based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value PV. "The accumulated heat amount becomes a predetermined value" by the control of the control unit 11 indicates "the accumulated heat amount becomes substantially equal to the predetermined value". The predetermined value PV is determined, for example, experimentally and / or empirically so as to achieve a predetermined processing result by the processing solution.
　図２を参照して、積算熱量について説明する。図２は、処理液の温度推移を示す図である。図２に示すように、横軸は時間を示し、縦軸は処理液の温度を示す。温度Ｔｒは、基板Ｗの周囲環境の温度（以下、「環境温度」と記載する。）を示す。 The accumulated heat amount will be described with reference to FIG. FIG. 2 is a diagram showing temperature transition of the treatment liquid. As shown in FIG. 2, the horizontal axis indicates time, and the vertical axis indicates the temperature of the processing solution. The temperature Tr indicates the temperature of the ambient environment of the substrate W (hereinafter referred to as “environmental temperature”).
　曲線Ｃは、処理液によって基板Ｗを処理している時の処理液の温度推移を示す。処理液の温度は、温度検出部９によって検出された温度を示している。時刻ｔ０で処理液の吐出が開始される。従って、時刻ｔ０で処理液が温度検出部９の測温部に接触する。その結果、温度検出部９によって検出された処理液の温度が急峻に上昇する。さらに、時刻ｔｅで処理液の吐出が終了するとともに処理液がサックバック（吸引）される。従って、時刻ｔｅで処理液が測温部から離間する。その結果、温度検出部９によって検出された処理液の温度は急峻に下降する。 Curve C represents the temperature transition of the processing liquid when processing the substrate W with the processing liquid. The temperature of the treatment liquid indicates the temperature detected by the temperature detection unit 9. At time t0, discharge of the treatment liquid is started. Accordingly, the treatment liquid contacts the temperature measuring unit of the temperature detection unit 9 at time t0. As a result, the temperature of the processing liquid detected by the temperature detection unit 9 rises sharply. Furthermore, at the time te, the discharge of the treatment liquid is completed and the treatment liquid is sucked back (sucked). Therefore, the processing liquid separates from the temperature measuring unit at time te. As a result, the temperature of the processing liquid detected by the temperature detection unit 9 drops sharply.
　曲線Ｃで囲まれた領域（斜線領域）の面積が積算熱量を示す。基板Ｗを処理している時の処理液の温度は、基板Ｗに投入される処理液の熱量に略比例するからである。具体的には、積算熱量は、基板Ｗを処理している時の処理液の温度の積算値によって表される。換言すれば、積算熱量は、処理液の温度の時間積分値によって表される。図２を参照して説明される例では、積算熱量は、時刻ｔ０から時刻ｔｅまでの処理液の温度の時間積分値によって表されている。更に換言すれば、積算熱量は、基板Ｗに投入される処理液の熱量の積算値を表す物理量を示す。 The area of the area (hatched area) surrounded by the curve C indicates the integrated heat quantity. The reason is that the temperature of the processing liquid when processing the substrate W is approximately proportional to the amount of heat of the processing liquid introduced to the substrate W. Specifically, the integrated heat amount is represented by an integrated value of the temperature of the processing liquid when processing the substrate W. In other words, the integrated heat quantity is represented by a time integral value of the temperature of the treatment liquid. In the example described with reference to FIG. 2, the integrated heat amount is represented by a time integral value of the temperature of the processing liquid from time t0 to time te. Furthermore, in other words, the integrated amount of heat indicates a physical quantity that represents the integrated value of the amount of heat of the processing liquid supplied to the substrate W.
　なお、時刻ｔ０では、温度検出部９によって検出された処理液の温度が規定温度ＴＭ以上である。従って、図２において、積算熱量の積算開始時刻は、処理液の温度が規定温度ＴＭ以上である期間中のいずれかの時刻である。積算熱量の積算終了時刻は、処理液の吐出が終了した時刻である。 At time t0, the temperature of the processing liquid detected by the temperature detection unit 9 is equal to or higher than the specified temperature TM. Therefore, in FIG. 2, the integration start time of the integrated heat amount is any time during a period in which the temperature of the processing liquid is equal to or higher than the specified temperature TM. The integration completion time of the integrated heat amount is a time when the discharge of the processing liquid is completed.
　以上、図１及び図２を参照して説明したように、実施形態１によれば、制御部１１は、処理液の温度に基づいてバルブ７を制御して、積算熱量が所定値ＰＶになるように処理液の吐出時間を制御する。例えば、温度検出部９によって検出された処理液の温度が、処理液の基準温度に略等しい場合には、処理液の吐出時間を所定時間ＰＴに設定して、積算熱量を所定値ＰＶにする。処理液の基準温度は、基板Ｗを処理する時の処理液の温度の基準値を示す。例えば、検出された処理液の温度が、処理液の基準温度よりも低い場合には、処理液の吐出時間を所定時間ＰＴよりも長くして、積算熱量を所定値ＰＶにする。例えば、検出された処理液の温度が、処理液の基準温度よりも高い場合には、処理液の吐出時間を所定時間ＰＴよりも短くして、積算熱量を所定値ＰＶにする。 As described above with reference to FIGS. 1 and 2, according to the first embodiment, the control unit 11 controls the valve 7 based on the temperature of the processing liquid so that the integrated heat amount becomes the predetermined value PV. Control the discharge time of the processing solution. For example, when the temperature of the processing liquid detected by the temperature detection unit 9 is substantially equal to the reference temperature of the processing liquid, the discharge time of the processing liquid is set to the predetermined time PT to set the integrated heat amount to the predetermined value PV. . The reference temperature of the processing liquid indicates a reference value of the temperature of the processing liquid when processing the substrate W. For example, when the detected temperature of the processing liquid is lower than the reference temperature of the processing liquid, the discharge time of the processing liquid is made longer than the predetermined time PT, and the accumulated heat amount is set to the predetermined value PV. For example, when the detected temperature of the processing liquid is higher than the reference temperature of the processing liquid, the discharge time of the processing liquid is made shorter than the predetermined time PT, and the accumulated heat amount is set to the predetermined value PV.
　従って、基板Ｗの環境温度が変動した場合でも、積算熱量は所定値ＰＶになる。つまり、複数の基板Ｗ間で、１枚の基板Ｗに対する積算熱量は一定である。従って、処理液による基板Ｗの処理結果が環境温度に依存することが抑制される。その結果、複数の基板Ｗ間で、処理液による処理結果の均一性を向上できる。換言すれば、複数の基板Ｗ間で、処理液による処理結果のバラツキを抑制できる。 Therefore, even when the environmental temperature of the substrate W fluctuates, the integrated heat amount becomes the predetermined value PV. That is, the accumulated heat amount for one substrate W is constant among the plurality of substrates W. Therefore, the dependence of the processing result of the substrate W by the processing liquid on the environmental temperature is suppressed. As a result, the uniformity of the processing result by the processing liquid can be improved among the plurality of substrates W. In other words, it is possible to suppress the variation in the processing result by the processing liquid among the plurality of substrates W.
　また、実施形態１によれば、制御部１１の制御は、高温の処理液（例えば、燐酸を含む処理液又はＳＰＭを含む処理液）を使用する場合に特に有効である。高温の処理液を使用する場合は、環境温度と処理液の温度との差が大きいため、環境温度の変動が処理液の温度に及ぼす影響は、高温でない処理液を使用する場合よりも大きくなるからである。実施形態１によれば、高温の処理液を使用する場合でも、複数の基板Ｗ間で、処理液による処理結果の均一性を向上できる。 Further, according to the first embodiment, the control of the control unit 11 is particularly effective when using a high temperature treatment liquid (for example, a treatment liquid containing phosphoric acid or a treatment liquid containing SPM). When a high temperature treatment liquid is used, the difference between the environmental temperature and the temperature of the treatment liquid is large, so the influence of the fluctuation of the environmental temperature on the temperature of the treatment liquid is greater than that when a non-high temperature treatment liquid is used It is from. According to the first embodiment, even in the case of using a high temperature processing liquid, the uniformity of the processing result by the processing liquid can be improved among the plurality of substrates W.
　次に、図１及び図３を参照して制御部１１について更に具体的に説明する。図１に示すように、制御部１１は、吐出終了時間情報ＳＴに基づいて処理液の吐出時間を制御する。吐出終了時間情報ＳＴは、温度プロファイルに基づいて予め規定され、積算熱量が所定値ＰＶになるときの処理液の吐出終了時間を示す。吐出終了時間情報ＳＴの示す吐出終了時間は、処理液の吐出終了時刻を特定する時間を示す。つまり、吐出終了時間情報ＳＴは、処理液の吐出終了時刻を特定する。 Next, the control unit 11 will be more specifically described with reference to FIGS. 1 and 3. As shown in FIG. 1, the control unit 11 controls the discharge time of the processing liquid based on the discharge end time information ST. The discharge end time information ST is defined in advance based on the temperature profile, and indicates the discharge end time of the processing liquid when the integrated heat amount reaches a predetermined value PV. The discharge end time indicated by the discharge end time information ST indicates the time for specifying the discharge end time of the processing liquid. That is, the discharge end time information ST specifies the discharge end time of the processing liquid.
　具体的には、制御部１１は、処理液の吐出開始後に、バルブ７が開状態から閉状態になるように、吐出終了時間情報ＳＴに基づいてバルブ７を制御する。更に具体的には、処理液を吐出している時の現在の時刻が、吐出終了時間情報ＳＴによって特定される吐出終了時刻に一致した時に、制御部１１は、開状態から閉状態になるようにバルブ７を制御する。その結果、積算熱量が所定値ＰＶになった時に処理液の吐出が終了する。 Specifically, the control unit 11 controls the valve 7 based on the discharge end time information ST so that the valve 7 changes from the open state to the closed state after the discharge start of the treatment liquid. More specifically, when the current time when discharging the treatment liquid coincides with the discharge end time specified by the discharge end time information ST, the control unit 11 changes from the open state to the closed state. Control the valve 7. As a result, the discharge of the processing liquid ends when the integrated heat amount reaches the predetermined value PV.
　次に、図３を参照して、温度プロファイルＰＦ及び吐出終了時間情報ＳＴについて説明する。図３は、温度プロファイルＰＦを示す図である。図３に示すように、横軸は時間を示し、縦軸は処理液の温度を示す。時刻ｔ０は処理液の吐出開始時刻を示す。時刻ｔｅ１、時刻ｔｅ２、及び時刻ｔｅ３は、処理液の吐出終了時刻を示す。温度Ｔｒは環境温度を示す。処理液の温度は、温度検出部９によって検出された温度を示している。 Next, the temperature profile PF and the ejection end time information ST will be described with reference to FIG. FIG. 3 is a diagram showing a temperature profile PF. As shown in FIG. 3, the horizontal axis represents time, and the vertical axis represents the temperature of the processing solution. Time t0 indicates the discharge start time of the processing liquid. The time te1, the time te2, and the time te3 indicate the discharge end time of the treatment liquid. The temperature Tr indicates an environmental temperature. The temperature of the treatment liquid indicates the temperature detected by the temperature detection unit 9.
　温度プロファイルＰＦの各々は、基板Ｗを処理する前に実験的及び／又は経験的に予め作成されている。温度プロファイルＰＦの各々は、基板Ｗに吐出する処理液と同じ処理液（以下、「同一処理液ＳＬ」と記載する。）を基板Ｗと同じ基板に吐出したときに、同一処理液ＳＬの温度の時間推移を表す。 Each of the temperature profiles PF has been created experimentally and / or empirically prior to processing the substrate W. When each of the temperature profiles PF discharges the same processing liquid as the processing liquid discharged onto the substrate W (hereinafter referred to as “the same processing liquid SL”) onto the same substrate as the substrate W, the temperature of the same processing liquid SL Represents the time transition of
　換言すれば、温度プロファイルＰＦの各々は、吐出中の同一処理液ＳＬの温度と吐出経過時間との関係を表している。そして、同一処理液ＳＬに基づく積算熱量が所定値ＰＶになるように、つまり、同一処理液ＳＬの温度の時間積分値が所定値ＰＶになるように、温度プロファイルＰＦの各々が規定される。複数の温度プロファイルＰＦの始点時刻（例えばｔ０）は互いに同一である。温度プロファイルＰＦの始点時刻は、同一処理液ＳＬの温度が規定温度ＴＭ以上である期間中のいずれかの時刻である。実施形態１では、吐出開始時刻ｔ０が温度プロファイルＰＦの各々の始点時刻と一致する。複数の温度プロファイルＰＦの終点時刻（例えば、ｔｅ１～ｔｅ３）は互いに異なる。温度プロファイルＰＦの終点時刻は、積算熱量が所定値ＰＶになった時刻である。 In other words, each of the temperature profiles PF represents the relationship between the temperature of the same processing liquid SL being discharged and the discharge elapsed time. Then, each of the temperature profiles PF is defined such that the integrated heat quantity based on the same treatment liquid SL becomes a predetermined value PV, that is, the time integral value of the temperature of the same treatment liquid SL becomes a predetermined value PV. Starting point times (for example, t0) of the plurality of temperature profiles PF are identical to one another. The start time of the temperature profile PF is any time in a period in which the temperature of the same processing liquid SL is equal to or higher than the specified temperature TM. In the first embodiment, the discharge start time t0 coincides with each start time of the temperature profile PF. The end times (for example, te1 to te3) of the plurality of temperature profiles PF are different from one another. The end time of the temperature profile PF is the time when the integrated heat quantity reaches a predetermined value PV.
　吐出終了時間情報ＳＴの示す吐出終了時間は、温度プロファイルＰＦの各々において、同一処理液ＳＬの温度の時間積分値が所定値ＰＶと等しくなる時間を示す。従って、実施形態１によれば、温度プロファイルＰＦを予め作成することによって、吐出終了時間情報ＳＴを容易に規定できる。 The discharge end time indicated by the discharge end time information ST indicates the time in which the time integral value of the temperature of the same processing liquid SL is equal to the predetermined value PV in each of the temperature profiles PF. Therefore, according to the first embodiment, the discharge end time information ST can be easily defined by creating the temperature profile PF in advance.
　具体的には、吐出終了時間情報ＳＴは、温度プロファイルＰＦごとに異なっている。つまり、複数の吐出終了時間情報ＳＴは、それぞれ、互いに異なる複数の温度プロファイルＰＦに基づいて予め規定されている。複数の温度プロファイルＰＦにおいて、同一処理液ＳＬの温度の最大値は異なっている。従って、複数の温度プロファイルＰＦは、互いに異なる温度条件で作成されている。また、実施形態１では、吐出終了時間情報ＳＴの示す吐出終了時間は、温度プロファイルＰＦの始点時刻から終点時刻までの時間を示す。 Specifically, the discharge end time information ST is different for each temperature profile PF. That is, the plurality of pieces of ejection end time information ST are defined in advance based on the plurality of different temperature profiles PF. In the plurality of temperature profiles PF, the maximum value of the temperature of the same processing liquid SL is different. Therefore, the plurality of temperature profiles PF are created under different temperature conditions. In the first embodiment, the discharge end time indicated by the discharge end time information ST indicates the time from the start time of the temperature profile PF to the end time.
　複数の温度プロファイルＰＦのうち、温度プロファイルＰＦ１から規定される吐出終了時間情報ＳＴを「吐出終了時間情報ＳＴ１」と記載し、温度プロファイルＰＦ２から規定される吐出終了時間情報ＳＴを「吐出終了時間情報ＳＴ２」と記載し、温度プロファイルＰＦ３から規定される吐出終了時間情報ＳＴを「吐出終了時間情報ＳＴ３」と記載する場合がある。 Among the plurality of temperature profiles PF, the discharge end time information ST defined from the temperature profile PF1 is described as “discharge end time information ST1”, and the discharge end time information ST defined from the temperature profile PF2 is “discharge end time information In some cases, the ejection end time information ST defined from the temperature profile PF3 may be described as "ejection end time information ST3".
　吐出終了時間情報ＳＴ１は、温度プロファイルＰＦ１において、同一処理液ＳＬの吐出開始時刻ｔ０から吐出終了時刻ｔｅ１までの時間（吐出終了時間）を示す。吐出終了時刻ｔｅ１が温度プロファイルＰＦ１の終点時刻である。つまり、吐出終了時間情報ＳＴ１は、温度プロファイルＰＦ１の始点時刻から終点時刻までの時間（吐出終了時間）を示す。 The discharge end time information ST1 indicates the time (discharge end time) from the discharge start time t0 of the same processing liquid SL to the discharge end time te1 in the temperature profile PF1. The discharge end time te1 is the end time of the temperature profile PF1. That is, the discharge end time information ST1 indicates the time from the start time to the end time of the temperature profile PF1 (discharge end time).
　吐出終了時間情報ＳＴ２は、温度プロファイルＰＦ２において、同一処理液ＳＬの吐出開始時刻ｔ０から吐出終了時刻ｔｅ２までの時間（吐出終了時間）を示す。吐出終了時刻ｔｅ２が温度プロファイルＰＦ２の終点時刻である。つまり、吐出終了時間情報ＳＴ２は、温度プロファイルＰＦ２の始点時刻から終点時刻までの時間（吐出終了時間）を示す。 The discharge end time information ST2 indicates the time (discharge end time) from the discharge start time t0 of the same processing liquid SL to the discharge end time te2 in the temperature profile PF2. The discharge end time te2 is the end time of the temperature profile PF2. That is, the discharge end time information ST2 indicates the time from the start time to the end time of the temperature profile PF2 (discharge end time).
　吐出終了時間情報ＳＴ３は、温度プロファイルＰＦ３において、同一処理液ＳＬの吐出開始時刻ｔ０から吐出終了時刻ｔｅ３までの時間（吐出終了時間）を示す。吐出終了時刻ｔｅ３が温度プロファイルＰＦ３の終点時刻である。つまり、吐出終了時間情報ＳＴ３は、温度プロファイルＰＦ３の始点時刻から終点時刻までの時間（吐出終了時間）を示す。 The discharge end time information ST3 indicates a time (discharge end time) from the discharge start time t0 of the same processing liquid SL to the discharge end time te3 in the temperature profile PF3. The discharge end time te3 is the end time of the temperature profile PF3. That is, the discharge end time information ST3 indicates the time from the start time to the end time of the temperature profile PF3 (discharge end time).
　制御部１１は、複数の吐出終了時間情報ＳＴから、いずれかの吐出終了時間情報ＳＴを選択する。つまり、制御部１１は、処理液を基板Ｗに向けて吐出している期間中に選択処理を実行する。選択処理は、複数の吐出終了時間情報ＳＴから、処理液の温度に対応する吐出終了時間情報ＳＴを選択する処理を示す。具体的には、選択処理は、複数の温度プロファイルＰＦのうち処理液の温度に最も近い温度プロファイルＰＦから規定された吐出終了時間情報ＳＴを、複数の吐出終了時間情報ＳＴから選択する処理を示す。処理液の温度は、処理液を吐出している期間中に、温度検出部９によって検出された処理液の温度を示す。 The control unit 11 selects any one of the discharge end time information ST from the plurality of discharge end time information ST. That is, the control unit 11 executes the selection process during the period in which the process liquid is discharged toward the substrate W. The selection process indicates a process of selecting discharge end time information ST corresponding to the temperature of the processing liquid from the plurality of discharge end time information ST. Specifically, the selection process indicates a process of selecting discharge end time information ST defined from the temperature profile PF closest to the temperature of the processing liquid among the plurality of temperature profiles PF from the plurality of discharge end time information ST. . The temperature of the treatment liquid indicates the temperature of the treatment liquid detected by the temperature detection unit 9 while the treatment liquid is being discharged.
　そして、制御部１１は、選択した吐出終了時間情報ＳＴに基づいてバルブ７を制御して、バルブ７を開状態から閉状態にする。その結果、積算熱量が所定値ＰＶになった時に処理液の吐出が終了する。 Then, the control unit 11 controls the valve 7 based on the selected discharge end time information ST to change the valve 7 from the open state to the closed state. As a result, the discharge of the processing liquid ends when the integrated heat amount reaches the predetermined value PV.
　以上、図１及び図３を参照して説明したように、実施形態１によれば、処理液を基板Ｗに向けて吐出している期間中に選択処理を実行して、処理液の温度に対応する吐出終了時間情報ＳＴを選択する。従って、吐出中の処理液の温度に応じた更に適切な吐出終了時間情報ＳＴに基づいて処理液の吐出時間を制御できる。その結果、複数の基板Ｗ間で、処理液による処理結果の均一性を更に向上できる。 As described above with reference to FIGS. 1 and 3, according to the first embodiment, the selection process is performed during the period in which the treatment liquid is discharged toward the substrate W, and the temperature of the treatment liquid is reduced. The corresponding ejection end time information ST is selected. Therefore, the discharge time of the processing liquid can be controlled based on the more appropriate discharge end time information ST according to the temperature of the processing liquid being discharged. As a result, the uniformity of the processing result by the processing liquid can be further improved among the plurality of substrates W.
　引き続き図３を参照して具体例を挙げながら、温度プロファイルＰＦに基づく吐出終了時間の推測について説明する。一例として、処理液（以下、吐出終了時間の推測の説明において「処理液Ｑ」と記載する。）を基板Ｗに吐出している期間において、温度プロファイルＰＦ１～ＰＦ３の時間軸と同じ時間軸上の時刻ｘ１で検出された処理液Ｑの温度が「Ｔｄ」である場合を説明する。この場合、時刻ｘ１での温度プロファイルＰＦ１上の処理液の温度は「Ｔ１」である。時刻ｘ２での温度プロファイルＰＦ２上の処理液の温度は「Ｔ２」である。時刻ｘ１での温度プロファイルＰＦ３上の処理液の温度は「Ｔ３」である。 The estimation of the discharge end time based on the temperature profile PF will be described with reference to FIG. 3 with reference to a specific example. As an example, during a period in which the treatment liquid (hereinafter referred to as “treatment liquid Q” in the description of the estimation of the ejection end time) is ejected onto the substrate W, the same time axis as the time axis of the temperature profiles PF1 to PF3 The case where the temperature of the processing liquid Q detected at the time x1 of the above is “Td” will be described. In this case, the temperature of the processing liquid on the temperature profile PF1 at time x1 is "T1". The temperature of the processing liquid on the temperature profile PF2 at time x2 is "T2". The temperature of the processing liquid on the temperature profile PF3 at time x1 is "T3".
　そして、温度Ｔ１～温度Ｔ３のうち処理液Ｑの温度Ｔｄに最も近い温度に対応する温度プロファイルＰＦは、時刻ｘ１で温度Ｔｄを有する処理液Ｑの温度推移に近似する。例えば、温度Ｔ１～温度Ｔ３のうち処理液Ｑの温度Ｔｄに最も近い温度が温度Ｔ１である場合、時刻ｘ１で温度Ｔ１を有する温度プロファイルＰＦ１は、処理液Ｑの温度推移に近似する。加えて、温度プロファイルＰＦ１は、積算熱量が所定値ＰＶになるように規定されている。 The temperature profile PF corresponding to the temperature closest to the temperature Td of the processing liquid Q among the temperatures T1 to T3 approximates the temperature transition of the processing liquid Q having the temperature Td at time x1. For example, when the temperature closest to the temperature Td of the processing liquid Q among the temperatures T1 to T3 is the temperature T1, the temperature profile PF1 having the temperature T1 at time x1 approximates the temperature transition of the processing liquid Q. In addition, the temperature profile PF1 is defined such that the integrated heat quantity becomes a predetermined value PV.
　従って、処理液Ｑに基づく積算熱量が所定値ＰＶになるときの吐出終了時間は、温度プロファイルＰＦ１の始点時刻ｔ０から終点時刻ｔｅ１までの時間（つまり、吐出終了時間情報ＳＴ１の示す吐出終了時間）に略一致することが推測できる。つまり、制御部１１は、処理液Ｑの温度と温度プロファイルＰＦ１とに基づいて、処理液Ｑの吐出終了時間を推測できる。 Therefore, the discharge end time when the integrated heat amount based on the treatment liquid Q becomes the predetermined value PV is the time from the start time t0 to the end time te1 of the temperature profile PF1 (that is, the discharge end time indicated by the discharge end time information ST1) It can be inferred that they substantially match. That is, the control unit 11 can estimate the discharge end time of the processing liquid Q based on the temperature of the processing liquid Q and the temperature profile PF1.
　その結果、制御部１１は、時刻ｘ１で処理液Ｑの温度に最も近い温度プロファイルＰＦ１から規定された吐出終了時間情報ＳＴ１に基づいてバルブ７を開状態から閉状態にすることで、処理液Ｑに基づく積算熱量を所定値ＰＶにすることができる。 As a result, the control unit 11 changes the valve 7 from the open state to the closed state based on the discharge end time information ST1 defined from the temperature profile PF1 closest to the temperature of the process liquid Q at time x1. The integrated heat amount based on the above can be set to the predetermined value PV.
　次に、図３及び図４を参照して、制御部１１が選択処理で参照する吐出終了時間テーブルＴＢについて説明する。図４は、吐出終了時間テーブルＴＢを示す図である。図３及び図４に示すように、記憶部１３は吐出終了時間テーブルＴＢを記憶する。吐出終了時間テーブルＴＢは、所定検出時刻ｘ１に対して定められ、複数の参照温度（実施形態１では、参照温度Ｔ１～参照温度Ｔ３）をそれぞれ複数の吐出終了時間情報ＳＴ（実施形態１では、吐出終了時間情報ＳＴ１～吐出終了時間情報ＳＴ３）と関連付けている。 Next, with reference to FIGS. 3 and 4, the discharge end time table TB to which the control unit 11 refers in the selection process will be described. FIG. 4 is a diagram showing the discharge end time table TB. As shown in FIGS. 3 and 4, the storage unit 13 stores a discharge end time table TB. The discharge end time table TB is determined for the predetermined detection time x1, and a plurality of reference temperatures (in the first embodiment, the reference temperatures T1 to T3 in the first embodiment) are stored in the plurality of discharge end time information ST (in the first embodiment It is associated with the ejection end time information ST1 to the ejection end time information ST3).
　吐出終了時間テーブルＴＢにおいて、参照温度Ｔ１は、所定検出時刻ｘ１における温度プロファイルＰＦ１上の温度Ｔ１を示す。そして、吐出終了時間情報ＳＴ１は、温度プロファイルＰＦ１の始点時刻ｔ０から終点時刻ｔｅ１までの時間を示す。 In the discharge end time table TB, the reference temperature T1 indicates the temperature T1 on the temperature profile PF1 at the predetermined detection time x1. The discharge end time information ST1 indicates the time from the start time t0 of the temperature profile PF1 to the end time te1.
　吐出終了時間テーブルＴＢにおいて、参照温度Ｔ２は、所定検出時刻ｘ１における温度プロファイルＰＦ２上の温度Ｔ２を示す。そして、吐出終了時間情報ＳＴ２は、温度プロファイルＰＦ２の始点時刻ｔ０から終点時刻ｔｅ２までの時間を示す。 In the discharge end time table TB, the reference temperature T2 indicates the temperature T2 on the temperature profile PF2 at the predetermined detection time x1. The discharge end time information ST2 indicates the time from the start time t0 of the temperature profile PF2 to the end time te2.
　吐出終了時間テーブルＴＢにおいて、参照温度Ｔ３は、所定検出時刻ｘ１における温度プロファイルＰＦ３上の温度Ｔ３を示す。そして、吐出終了時間情報ＳＴ３は、温度プロファイルＰＦ３の始点時刻ｔ０から終点時刻ｔｅ３までの時間を示す。 In the discharge end time table TB, the reference temperature T3 indicates the temperature T3 on the temperature profile PF3 at the predetermined detection time x1. The discharge end time information ST3 indicates the time from the start time t0 to the end time te3 of the temperature profile PF3.
　制御部１１は、選択処理において、吐出終了時間テーブルＴＢを参照して、処理液の温度に最も近い参照温度に関連付けられた吐出終了時間情報ＳＴを選択する。従って、実施形態１によれば、簡素な処理によって、複数の吐出終了時間情報ＳＴから適切な吐出終了時間情報ＳＴを容易に選択できる。 In the selection process, the control unit 11 refers to the discharge end time table TB to select the discharge end time information ST associated with the reference temperature closest to the temperature of the processing liquid. Therefore, according to the first embodiment, the appropriate ejection end time information ST can be easily selected from the plurality of ejection end time information ST by simple processing.
　なお、実施形態１では、３つの温度プロファイルＰＦ（温度プロファイルＰＦ１～ＰＦ３）を作成したため、吐出終了時間テーブルＴＢは３つの参照温度（参照温度Ｔ１～Ｔ３）を有していた。ただし、温度プロファイルＰＦの数は、２以上であれば、特に限定されないし、参照温度の数も、温度プロファイルＰＦの数に対応して２以上であれば、特に限定されない。積算熱量が更に精度良く所定値ＰＶになるように制御するためには、温度プロファイルＰＦの数と参照温度の数とは多い程好ましい。吐出中の処理液の温度に更に近似した参照温度を選択できるからである。 In the first embodiment, since three temperature profiles PF (temperature profiles PF1 to PF3) are created, the discharge end time table TB has three reference temperatures (reference temperatures T1 to T3). However, the number of temperature profiles PF is not particularly limited as long as it is two or more, and the number of reference temperatures is also not particularly limited as long as it is two or more corresponding to the number of temperature profiles PF. In order to control the integrated heat amount to be the predetermined value PV more accurately, it is preferable that the number of temperature profiles PF and the number of reference temperatures be larger. This is because it is possible to select a reference temperature that is more similar to the temperature of the processing liquid being discharged.
　次に、図１及び図５を参照して、基板処理装置１００が実行する基板処理方法について説明する。図５は、基板処理方法を示すフローチャートである。図５に示すように、基板処理方法は、基板Ｗを処理する方法であり、工程Ｓ１～工程Ｓ７を含む。 Next, a substrate processing method performed by the substrate processing apparatus 100 will be described with reference to FIGS. 1 and 5. FIG. 5 is a flowchart showing a substrate processing method. As shown in FIG. 5, the substrate processing method is a method of processing a substrate W, and includes steps S1 to S7.
　工程Ｓ１において、温度検出部９は、処理液の温度の検出を開始する。そして、温度検出部９は、処理液を基板Ｗに吐出する期間中に、処理液の温度を検出する。温度検出部９は、処理液の温度を示す情報を制御部１１に出力する。工程Ｓ１は、「チャンバー１内の処理液の温度を検出する検出工程」の一例に相当する。 In step S1, the temperature detection unit 9 starts detection of the temperature of the processing liquid. Then, the temperature detection unit 9 detects the temperature of the processing liquid during the period in which the processing liquid is discharged onto the substrate W. The temperature detection unit 9 outputs information indicating the temperature of the treatment liquid to the control unit 11. Step S1 corresponds to an example of “detection step of detecting the temperature of the processing liquid in the chamber 1”.
　工程Ｓ３において、ノズル３は、基板Ｗに向けて処理液の吐出を開始する。具体的には、制御部１１は、バルブ７が閉状態から開状態になるように、バルブ７を制御する。工程Ｓ３は、「チャンバー１に収容された基板Ｗに向けて処理液を吐出する吐出工程」の一例に相当する。 In step S3, the nozzle 3 starts discharging the processing solution toward the substrate W. Specifically, the control unit 11 controls the valve 7 so that the valve 7 changes from the closed state to the open state. Step S3 corresponds to an example of “a discharge step of discharging the processing liquid toward the substrate W stored in the chamber 1”.
　工程Ｓ５において、制御部１１は、現在の時刻が所定検出時刻ｘ１になったか否かを判定する。 In step S5, the control unit 11 determines whether the current time has reached the predetermined detection time x1.
　否定判定がされた場合（工程Ｓ５でＮｏ）、処理は工程Ｓ５で待機する。 If a negative determination is made (No in step S5), the process waits in step S5.
　一方、肯定判定がされた場合（工程Ｓ５でＹｅｓ）、処理は工程Ｓ７に進む。 On the other hand, when an affirmative determination is made (Yes in step S5), the process proceeds to step S7.
　工程Ｓ７において、制御部１１は、所定検出時刻ｘ１で検出された処理液の温度に基づいて、処理液に基づく積算熱量が所定値ＰＶになるように処理液の吐出時間を制御する。工程Ｓ９は「制御工程」の一例に相当する。 In step S7, the control unit 11 controls the discharge time of the treatment liquid based on the temperature of the treatment liquid detected at the predetermined detection time x1 so that the integrated heat amount based on the treatment liquid becomes the predetermined value PV. Step S9 corresponds to an example of the “control step”.
　具体的には、工程Ｓ７は、工程Ｓ７１～工程Ｓ７５を含む。 Specifically, step S7 includes steps S71 to S75.
　工程Ｓ７１において、制御部１１は選択処理を実行する。具体的には、制御部１１は、吐出終了時間テーブルＴＢ（図４）を参照して、処理液の温度に最も近い参照温度に関連付けられた吐出終了時間情報ＳＴを選択する。工程Ｓ７１は「処理液を基板Ｗに向けて吐出している期間中に選択処理を実行する選択工程」の一例に相当する。 In step S71, the control unit 11 executes a selection process. Specifically, the control unit 11 selects the discharge end time information ST associated with the reference temperature closest to the temperature of the processing liquid with reference to the discharge end time table TB (FIG. 4). Step S71 corresponds to an example of “selection step of executing selection processing during a period in which the processing liquid is discharged toward the substrate W”.
　工程Ｓ７３において、現在の時刻が、選択された吐出終了時間情報ＳＴによって特定される吐出終了時刻になったか否かを、制御部１１は判定する。 In step S73, the control unit 11 determines whether the current time has reached the discharge end time specified by the selected discharge end time information ST.
　否定判定がされた場合（工程Ｓ７３でＮｏ）、処理は工程Ｓ７３で待機する。従って、制御部１１は、選択処理を１回だけ実行する。 If a negative determination is made (No in step S73), the process waits in step S73. Therefore, the control unit 11 executes the selection process only once.
　一方、肯定判定がされた場合（工程Ｓ７３でＹｅｓ）、処理は工程Ｓ７５に進む。 On the other hand, when an affirmative determination is made (Yes in step S73), the process proceeds to step S75.
　工程Ｓ７５において、ノズル３は、処理液の吐出を終了する。具体的には、制御部１１は、バルブ７が開状態から閉状態になるように、バルブ７を制御する。工程Ｓ７５は、「吐出終了時間情報ＳＴに基づいて処理液の吐出を終了する終了工程」の一例に相当する。 In step S75, the nozzle 3 ends the discharge of the treatment liquid. Specifically, the control unit 11 controls the valve 7 so that the valve 7 is closed from the open state. The step S75 corresponds to an example of “a termination step of terminating the discharge of the processing liquid based on the discharge termination time information ST”.
　以上、図１及び図５を参照して説明したように、実施形態１によれば、制御部１１は、選択処理を１回だけ実行する。従って、簡素な処理によって、複数の基板Ｗ間で、処理液による処理結果の均一性を向上できる。 As described above with reference to FIGS. 1 and 5, according to the first embodiment, the control unit 11 executes the selection process only once. Therefore, the uniformity of the processing result by the processing liquid can be improved among the plurality of substrates W by the simple processing.
　なお、制御部１１は、ＣＰＵ（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）のようなプロセッサーを含む。記憶部１３は、記憶装置を含み、データ及びコンピュータープログラムを記憶する。記憶部１３は、半導体メモリーのような主記憶装置と、半導体メモリー及び／又はハードディスクドライブのような補助記憶装置とを含む。記憶部１３は、リムーバブルメディアを含んでいてもよい。制御部１１のプロセッサーは、記憶部１３の記憶装置が記憶しているコンピュータープログラムを実行して、基板処理方法を実行する。 The control unit 11 includes a processor such as a CPU (Central Processing Unit). The storage unit 13 includes a storage device, and stores data and computer programs. The storage unit 13 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory and / or a hard disk drive. The storage unit 13 may include removable media. The processor of the control unit 11 executes the computer program stored in the storage device of the storage unit 13 to execute the substrate processing method.
　（変形例）
　図１、図６、及び図７を参照して、実施形態１の変形例に係る基板処理装置１００について説明する。変形例が複数回の選択処理を実行する点で、変形例は実施形態１と異なる。以下、変形例が実施形態１と異なる点を主に説明する。 (Modification)
A substrate processing apparatus 100 according to a modification of the first embodiment will be described with reference to FIGS. 1, 6 and 7. The modification is different from the first embodiment in that the modification executes the selection process a plurality of times. The differences between the modification example and the first embodiment will be mainly described below.
　図１に示すように、温度検出部９は、処理液を吐出中の複数の所定検出時刻で処理液の温度を検出する。そして、制御部１１は、所定検出時刻ごとに、所定検出時刻で検出された処理液の温度に基づいて選択処理を実行する。その結果、変形例によれば、時間の経過とともに処理液の温度が変動した場合であっても、所定検出時刻ごとに、処理液の温度に応じた適切な吐出終了時間情報ＳＴを選択できる。その結果、複数の基板Ｗ間で、処理液による処理結果の均一性を更に向上できる。 As shown in FIG. 1, the temperature detection unit 9 detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid. Then, the control unit 11 executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time every predetermined detection time. As a result, according to the modification, even when the temperature of the treatment liquid fluctuates with the passage of time, it is possible to select the appropriate ejection end time information ST according to the temperature of the treatment liquid at every predetermined detection time. As a result, the uniformity of the processing result by the processing liquid can be further improved among the plurality of substrates W.
　次に、図３及び図６を参照して、制御部１１が選択処理で参照する吐出終了時間テーブルＴＢについて説明する。図６は、吐出終了時間テーブルＴＢを示す図である。図３及び図６に示すように、記憶部１３は、互いに異なる複数の吐出終了時間テーブルＴＢを記憶する。 Next, with reference to FIG. 3 and FIG. 6, the discharge end time table TB to which the control unit 11 refers in the selection process will be described. FIG. 6 is a diagram showing the discharge end time table TB. As shown in FIGS. 3 and 6, the storage unit 13 stores a plurality of discharge end time tables TB different from one another.
　複数の吐出終了時間テーブルＴＢ（吐出終了時間テーブルＴＢ１～吐出終了時間テーブルＴＢＮ）は、それぞれ、複数の所定検出時刻（所定検出時刻ｘ１～所定検出時間ｘＮ）に対して定められている。「Ｎ」は２以上の整数を示す。変形例では、「Ｎ」は３以上の整数である。 A plurality of discharge end time tables TB (discharge end time table TB1 to discharge end time table TBN) are respectively defined for a plurality of predetermined detection times (predetermined detection time x1 to predetermined detection time xN). "N" represents an integer of 2 or more. In a variation, “N” is an integer of 3 or more.
　吐出終了時間テーブルＴＢ１は、所定検出時刻ｘ１に対して定められ、複数の参照温度（変形例では、参照温度Ｔ１～参照温度Ｔ３）をそれぞれ複数の吐出終了時間情報ＳＴ（変形例では、吐出終了時間情報ＳＴ１～吐出終了時間情報ＳＴ３）と関連付けている。吐出終了時間テーブルＴＢ１は、図４を参照して説明した吐出終了時間テーブルＴＢと同じである。 The discharge end time table TB1 is determined for the predetermined detection time x1, and a plurality of reference temperatures (in the modification, reference temperature T1 to reference temperature T3 in the modification) are respectively output to the plurality of discharge end time information ST (in the modification) It is associated with time information ST1 to ejection end time information ST3). The discharge end time table TB1 is the same as the discharge end time table TB described with reference to FIG.
　吐出終了時間テーブルＴＢ２は、所定検出時刻ｘ２に対して定められ、複数の参照温度（変形例では、参照温度Ｔ４～参照温度Ｔ６）をそれぞれ複数の吐出終了時間情報ＳＴ（変形例では、吐出終了時間情報ＳＴ１～吐出終了時間情報ＳＴ３）と関連付けている。そして、参照温度Ｔ４は、所定検出時刻ｘ２における温度プロファイルＰＦ１上の温度Ｔ４を示す。参照温度Ｔ５は、所定検出時刻ｘ２における温度プロファイルＰＦ２上の温度Ｔ５を示す。参照温度Ｔ６は、所定検出時刻ｘ３における温度プロファイルＰＦ３上の温度Ｔ６を示す。 The discharge end time table TB2 is determined for the predetermined detection time x2, and a plurality of reference temperatures (in the modification, reference temperature T4 to reference temperature T6 in the modification) respectively correspond to a plurality of discharge end time information ST (in the modification, the discharge end) It is associated with time information ST1 to ejection end time information ST3). And reference temperature T4 shows temperature T4 on temperature profile PF1 in predetermined detection time x2. The reference temperature T5 indicates the temperature T5 on the temperature profile PF2 at the predetermined detection time x2. The reference temperature T6 indicates the temperature T6 on the temperature profile PF3 at the predetermined detection time x3.
　吐出終了時間テーブルＴＢ３～吐出終了時間テーブルＴＢＮは、吐出終了時間テーブルＴＢ１及び吐出終了時間テーブルＴＢ２と同様にして、温度プロファイルＰＦ１～温度プロファイルＰＦ３に基づいて作成されている。 The discharge end time table TB3 to the discharge end time table TBN are created based on the temperature profile PF1 to the temperature profile PF3 in the same manner as the discharge end time table TB1 and the discharge end time table TB2.
　制御部１１は、選択処理において、所定検出時刻ごとに、所定検出時刻に対して定められた吐出終了時間テーブルＴＢを参照して、処理液の温度に最も近い参照温度に関連付けられた吐出終了時間情報ＳＴを選択する。 The control unit 11 refers to the discharge end time table TB determined for the predetermined detection time in the selection process, and the discharge end time associated with the reference temperature closest to the temperature of the processing liquid. Select information ST.
　なお、温度プロファイルＰＦの数は、２以上であれば、特に限定されないし、吐出終了時間テーブルＴＢの各々において、参照温度の数も、温度プロファイルＰＦの数に対応して２以上であれば、特に限定されない。 The number of temperature profiles PF is not particularly limited as long as it is two or more, and in each of the discharge end time tables TB, the number of reference temperatures is also two or more corresponding to the number of temperature profiles PF, It is not particularly limited.
　次に、図１及び図７を参照して、変形例に係る基板処理装置１００が実行する基板処理方法について説明する。図７は、基板処理方法を示すフローチャートである。図７に示すように、基板処理方法は、基板Ｗを処理する方法であり、工程Ｓ１１～工程Ｓ１７を含む。 Next, a substrate processing method performed by the substrate processing apparatus 100 according to the modification will be described with reference to FIGS. 1 and 7. FIG. 7 is a flowchart showing a substrate processing method. As shown in FIG. 7, the substrate processing method is a method of processing a substrate W, and includes steps S11 to S17.
　工程Ｓ１１において、温度検出部９は、処理液の温度の検出を開始する。そして、温度検出部９は、処理液を吐出中の複数の所定検出時刻で処理液の温度を検出する。工程Ｓ１１は、工程Ｓ１（図５）と同様であり、「検出工程」の一例に相当する。 In step S11, the temperature detection unit 9 starts detection of the temperature of the processing liquid. Then, the temperature detection unit 9 detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid. Step S11 is the same as step S1 (FIG. 5), and corresponds to an example of the “detection step”.
　工程Ｓ１３において、ノズル３は、基板Ｗに向けて処理液の吐出を開始する。工程Ｓ１３は、工程Ｓ３（図５）と同様であり、「吐出工程」の一例に相当する。 In step S13, the nozzle 3 starts discharging the processing liquid toward the substrate W. Step S13 is the same as step S3 (FIG. 5), and corresponds to an example of the “ejection step”.
　工程Ｓ１５において、現在の時刻が、複数の所定検出時刻のうちのいずれかの所定検出時刻になったか否かを、制御部１１は判定する。 In step S15, the control unit 11 determines whether the current time has reached any one of a plurality of predetermined detection times.
　否定判定がされた場合（工程Ｓ１５でＮｏ）、処理は工程Ｓ１５で待機する。 If a negative determination is made (No in step S15), the process waits in step S15.
　一方、肯定判定がされた場合（工程Ｓ１５でＹｅｓ）、処理は工程Ｓ１７に進む。 On the other hand, when an affirmative determination is made (Yes in step S15), the process proceeds to step S17.
　工程Ｓ１７において、制御部１１は、所定検出時刻で検出された処理液の温度に基づいて、処理液に基づく積算熱量が所定値ＰＶになるように処理液の吐出時間を制御する。工程Ｓ１７は、工程Ｓ７（図５）と同様であり、「制御工程」の一例に相当する。 In step S17, the control unit 11 controls the discharge time of the treatment liquid based on the temperature of the treatment liquid detected at the predetermined detection time so that the integrated heat amount based on the treatment liquid becomes the predetermined value PV. Step S17 is the same as step S7 (FIG. 5), and corresponds to an example of the “control step”.
　具体的には、工程Ｓ１７は、工程Ｓ１７１～工程Ｓ１７５を含む。 Specifically, step S17 includes steps S171 to S175.
　工程Ｓ１７１において、制御部１１は、所定検出時刻で検出された処理液の温度に基づいて選択処理を実行する。具体的には、制御部１１は、複数の吐出終了時間テーブルＴＢ（図６）のうち、所定検出時刻に対して定められた吐出終了時間テーブルＴＢを参照して、処理液の温度に最も近い参照温度に関連付けられた吐出終了時間情報ＳＴを選択する。例えば、工程Ｓ１５において現在の時刻が所定検出時刻ｘ１であると判定されている場合は、制御部１１は、所定検出時刻ｘ１に対して定められた吐出終了時間テーブルＴＢ１を参照する。工程Ｓ１７１は、「選択工程」の一例に相当する。 In step S171, the control unit 11 executes selection processing based on the temperature of the processing liquid detected at a predetermined detection time. Specifically, the control unit 11 refers to the discharge end time table TB determined for the predetermined detection time among the plurality of discharge end time tables TB (FIG. 6), and is closest to the temperature of the processing liquid. The discharge end time information ST associated with the reference temperature is selected. For example, when it is determined in step S15 that the current time is the predetermined detection time x1, the control unit 11 refers to the discharge end time table TB1 defined for the predetermined detection time x1. Step S171 corresponds to an example of the “selection step”.
　工程Ｓ１７３において、現在の時刻が、選択された吐出終了時間情報ＳＴによって特定される吐出終了時刻になったか否かを、制御部１１は判定する。 In step S173, the control unit 11 determines whether the current time has reached the discharge end time specified by the selected discharge end time information ST.
　否定判定がされた場合（工程Ｓ１７３でＮｏ）、処理は工程Ｓ１５に戻る。 If a negative determination is made (No in step S173), the process returns to step S15.
　一方、肯定判定がされた場合（工程Ｓ１７３でＹｅｓ）、処理は工程Ｓ１７５に進む。 On the other hand, when an affirmative determination is made (Yes in step S173), the process proceeds to step S175.
　工程Ｓ１７５において、ノズル３は、処理液の吐出を終了する。工程Ｓ１７５は、工程Ｓ７８（図５）と同様であり、「終了工程」の一例に相当する。 In step S175, the nozzle 3 ends the discharge of the treatment liquid. Step S175 is the same as step S78 (FIG. 5), and corresponds to an example of the “end step”.
　なお、制御部１１のプロセッサーは、記憶部１３の記憶装置が記憶しているコンピュータープログラムを実行して、基板処理方法を実行する。 The processor of the control unit 11 executes the computer program stored in the storage device of the storage unit 13 to execute the substrate processing method.
　（実施形態２）
　図８～図１１を参照して、本発明の実施形態２に係る基板処理装置１００Ａについて説明する。実施形態２が複数のチャンバー１を備えている点で、実施形態２は実施形態１及び変形例と異なる。以下、実施形態２が実施形態１及び変形例と異なる点を主に説明する。なお、図８～図１０において、理解を容易にするため、互いに直交するＸ軸とＹ軸とＺ軸とを記載している。Ｘ軸及びＹ軸は水平方向に平行であり、Ｚ軸は鉛直方向に平行である。 Second Embodiment
A substrate processing apparatus 100A according to a second embodiment of the present invention will be described with reference to FIGS. 8 to 11. The second embodiment differs from the first embodiment and the modifications in that the second embodiment includes a plurality of chambers 1. The differences between the second embodiment and the first embodiment and the modifications are mainly described below. In FIGS. 8 to 10, X axis, Y axis and Z axis which are orthogonal to each other are described for easy understanding. The X and Y axes are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
　まず、図８を参照して、基板処理装置１００Ａについて説明する。図８は、基板処理装置１００Ａを示す平面図である。図８に示すように、基板処理装置１００Ａは、複数のロードポートＬＰと、インデクサーロボットＩＲと、センターロボットＣＲと、複数の処理ユニット２２と、複数の流体ボックス２４と、処理液キャビネット２６と、制御装置２８とを備える。制御装置２８は、ロードポートＬＰ、インデクサーロボットＩＲ、センターロボットＣＲ、及び処理ユニット２２を制御する。制御装置２８は、制御部１１と、記憶部１３とを含む。 First, the substrate processing apparatus 100A will be described with reference to FIG. FIG. 8 is a plan view showing the substrate processing apparatus 100A. As shown in FIG. 8, the substrate processing apparatus 100 A includes a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of processing units 22, a plurality of fluid boxes 24, and a processing liquid cabinet 26. , And a control device 28. The control device 28 controls the load port LP, the indexer robot IR, the center robot CR, and the processing unit 22. Control device 28 includes control unit 11 and storage unit 13.
　ロードポートＬＰの各々は、複数枚の基板Ｗを積層して収容する。インデクサーロボットＩＲは、ロードポートＬＰとセンターロボットＣＲとの間で基板Ｗを搬送する。センターロボットＣＲは、インデクサーロボットＩＲと処理ユニット２２との間で基板Ｗを搬送する。処理ユニット２２の各々は、基板Ｗに処理液を吐出して、基板Ｗを処理する。流体ボックス２４の各々は流体機器を収容する。処理液キャビネット２６は処理液を収容する。 Each of the load ports LP stacks and accommodates a plurality of substrates W. The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the processing unit 22. Each of the processing units 22 discharges the processing liquid onto the substrate W to process the substrate W. Each of the fluid boxes 24 contains fluidic devices. The treatment solution cabinet 26 contains a treatment solution.
　具体的には、複数の処理ユニット２２は、平面視においてセンターロボットＣＲを取り囲むように配置された複数のタワーＴＷ（実施形態２では４つのタワーＴＷ）を形成している。各タワーＴＷは、上下に積層された複数の処理ユニット２２（実施形態２では３つの処理ユニット２２）を含む。複数の流体ボックス２４は、それぞれ、複数のタワーＴＷに対応している。処理液キャビネット２６内の処理液は、いずれかの流体ボックス２４を介して、流体ボックス２４に対応するタワーＴＷに含まれる全ての処理ユニット２２に供給される。 Specifically, the plurality of processing units 22 form a plurality of towers TW (four towers TW in the second embodiment) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of processing units 22 (three processing units 22 in the second embodiment) stacked one on top of the other. The plurality of fluid boxes 24 correspond to the plurality of towers TW, respectively. The processing liquid in the processing liquid cabinet 26 is supplied to all the processing units 22 included in the tower TW corresponding to the fluid box 24 via any fluid box 24.
　次に、図９を参照して、処理ユニット２２について説明する。図９は、処理ユニット２２の内部を示す図である。図９に示すように、処理ユニット２２は、チャンバー１と、ノズル３と、温度検出部９と、スピンチャック３０と、カップ３２と、待機ポット３４と、ノズル移動ユニット３６とを含む。基板処理装置１００Ａは、供給配管５と、バルブ７と、流量計３８と、流量調整バルブ４０とを含む。 Next, the processing unit 22 will be described with reference to FIG. FIG. 9 shows the inside of the processing unit 22. As shown in FIG. As shown in FIG. 9, the processing unit 22 includes a chamber 1, a nozzle 3, a temperature detection unit 9, a spin chuck 30, a cup 32, a standby pot 34, and a nozzle moving unit 36. The substrate processing apparatus 100A includes a supply pipe 5, a valve 7, a flow meter 38, and a flow control valve 40.
　チャンバー１は略箱形状を有する。スピンチャック３０は、チャンバー１内で基板Ｗを水平に保持しながら、回転軸線Ａ１まわりに基板Ｗを回転させる。カップ３２は略筒形状を有する。カップ３２は、基板Ｗから排出された処理液を受け止める。 The chamber 1 has a substantially box shape. The spin chuck 30 rotates the substrate W around the rotation axis A <b> 1 while holding the substrate W horizontally in the chamber 1. The cup 32 has a substantially cylindrical shape. The cup 32 receives the processing liquid discharged from the substrate W.
　待機ポット３４は、ノズル３の待機位置の下方に配置される。待機位置は、回転軸線Ａ１に対してスピンチャック３０よりも外側の第１所定位置を示す。ノズル移動ユニット３６は、回動軸線Ａ２の回りに回動して、ノズル３を水平に移動させる。具体的には、ノズル移動ユニット３６は、ノズル３の待機位置と処理位置との間で、ノズル３を水平に移動させる。処理位置は、基板Ｗの上方の第２所定位置を示す。 The standby pot 34 is disposed below the standby position of the nozzle 3. The standby position indicates a first predetermined position outside the spin chuck 30 with respect to the rotation axis A1. The nozzle moving unit 36 rotates around the rotation axis A2 to move the nozzle 3 horizontally. Specifically, the nozzle moving unit 36 horizontally moves the nozzle 3 between the standby position of the nozzle 3 and the processing position. The processing position indicates a second predetermined position above the substrate W.
　ノズル３に対する処理液の供給開始及び供給停止は、バルブ７によって切り替えられる。ノズル３に供給される処理液の流量は、流量計３８によって検出される。流量は、流量調整バルブ４０によって変更可能である。バルブ７が開状態になると、処理液が、流量調整バルブ４０の開度に対応する流量で供給配管５からノズル３に供給される。その結果、ノズル３から処理液が吐出される。開度は、流量調整バルブ４０が開いている程度を示す。 The supply start and the supply stop of the processing liquid to the nozzle 3 are switched by the valve 7. The flow rate of the processing liquid supplied to the nozzle 3 is detected by the flow meter 38. The flow rate can be changed by the flow rate adjustment valve 40. When the valve 7 is opened, the processing liquid is supplied from the supply pipe 5 to the nozzle 3 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 40. As a result, the processing liquid is discharged from the nozzle 3. The degree of opening indicates the degree to which the flow rate adjustment valve 40 is open.
　ノズル３は、基板Ｗに処理液を吐出する前に、プリディスペンス処理を実行する。プリディスペンス処理とは、基板Ｗに処理液を吐出する前に、待機ポット３４に向けて処理液を吐出する処理のことである。 The nozzle 3 performs pre-dispensing processing before discharging the processing liquid onto the substrate W. The pre-dispensing process is a process of discharging the processing liquid toward the standby pot 34 before discharging the processing liquid onto the substrate W.
　制御部１１は、図１～図５を参照して説明した実施形態１に係る制御部１１、又は、図６及び図７を参照して説明した変形例に係る制御部１１と同様に動作する。従って、実施形態２によれば、実施形態１又は変形例と同様に、１つのチャンバー１で１枚ずつ処理される複数の基板Ｗ間で、処理液による処理結果の均一性を向上できる。 The control unit 11 operates in the same manner as the control unit 11 according to the first embodiment described with reference to FIGS. 1 to 5 or the control unit 11 according to the modification described with reference to FIGS. 6 and 7. . Therefore, according to the second embodiment, as in the first embodiment or the modification, the uniformity of the processing result with the processing liquid can be improved among the plurality of substrates W processed one by one in one chamber 1.
　また、実施形態２では、基板処理装置１００Ａは、チャンバー１ごとに、ノズル３と供給配管５とバルブ７と温度検出部９とを備える。そして、制御部１１は、複数の基板Ｗをそれぞれ収容する複数のチャンバー１ごとに、積算熱量が所定値ＰＶになるように処理液の吐出時間を制御する。従って、複数のチャンバー１にわたって、処理液による基板Ｗの処理結果が環境温度に依存することが抑制される。その結果、複数のチャンバー１で処理される複数の基板Ｗ間で、処理液による処理結果の均一性を向上できる。例えば、１つのタワーＴＷ内の複数のチャンバー１間で、複数の基板Ｗに対して、処理液による処理結果の均一性を向上できる。例えば、複数のタワーＴＷ間で、複数の基板Ｗに対して、処理液による処理結果の均一性を向上できる。なお、基板処理装置１００Ａは、図５に示す基板処理方法をチャンバー１ごとに実行する。又は、基板処理装置１００Ａは、図７に示す基板処理方法をチャンバー１ごとに実行する。 Further, in the second embodiment, the substrate processing apparatus 100 </ b> A includes the nozzle 3, the supply pipe 5, the valve 7, and the temperature detection unit 9 for each chamber 1. Then, the control unit 11 controls the discharge time of the processing liquid so that the integrated heat amount becomes a predetermined value PV for each of the plurality of chambers 1 that respectively accommodate the plurality of substrates W. Therefore, the dependence of the processing result of the substrate W by the processing liquid on the environmental temperature is suppressed over the plurality of chambers 1. As a result, among the plurality of substrates W processed in the plurality of chambers 1, the uniformity of the processing result by the processing liquid can be improved. For example, the uniformity of the processing result with the processing liquid can be improved with respect to a plurality of substrates W among a plurality of chambers 1 in one tower TW. For example, the uniformity of the processing result by the processing liquid can be improved for the plurality of substrates W among the plurality of towers TW. The substrate processing apparatus 100A executes the substrate processing method shown in FIG. Alternatively, the substrate processing apparatus 100A executes the substrate processing method shown in FIG.
　次に、図１０を参照して、ノズル３への処理液の供給について説明する。図１０は、基板処理装置１００Ａの配管を示す図である。図１０に示すように、基板処理装置１００Ａは、各タワーＴＷにおいて、処理ユニット２２ごとに、供給配管５とバルブ７と流量計３８と流量調整バルブ４０とを備えている。バルブ７と流量計３８と流量調整バルブ４０とは、タワーＴＷに対応する流体ボックス２４に収容される。各供給配管５の一部は流体ボックス２４に収容され、各供給配管５の他の一部はチャンバー１に収容される。 Next, supply of the processing liquid to the nozzle 3 will be described with reference to FIG. FIG. 10 is a view showing piping of the substrate processing apparatus 100A. As shown in FIG. 10, the substrate processing apparatus 100A is provided with a supply pipe 5, a valve 7, a flow meter 38, and a flow control valve 40 for each processing unit 22 in each tower TW. The valve 7, the flow meter 38 and the flow control valve 40 are accommodated in a fluid box 24 corresponding to the tower TW. A part of each supply pipe 5 is accommodated in the fluid box 24, and another part of each supply pipe 5 is accommodated in the chamber 1.
　また、基板処理装置１００Ａは、処理液タンク６０と、循環配管６１と、ポンプ６５と、フィルター６６と、温度調節器６７とを備える。処理液タンク６０とポンプ６５とフィルター６６と温度調節器６７とは、処理液キャビネット２６に収容される。循環配管６１の一部は処理液キャビネット２６に収容され、循環配管６１の他の一部は流体ボックス２４に収容される。 The substrate processing apparatus 100A further includes a processing liquid tank 60, a circulation pipe 61, a pump 65, a filter 66, and a temperature controller 67. The treatment liquid tank 60, the pump 65, the filter 66 and the temperature controller 67 are accommodated in the treatment liquid cabinet 26. A part of the circulation pipe 61 is accommodated in the treatment liquid cabinet 26, and another part of the circulation pipe 61 is accommodated in the fluid box 24.
　循環配管６１は、処理液タンク６０から下流に延びる上流配管６２と、上流配管６２から分岐した複数の個別配管６３と、各個別配管６３から処理液タンク６０まで下流に延びる下流配管６４とを含む。 The circulation piping 61 includes an upstream piping 62 extending downstream from the processing liquid tank 60, a plurality of individual piping 63 branched from the upstream piping 62, and a downstream piping 64 extending downstream from each individual piping 63 to the processing liquid tank 60. .
　上流配管６２の上流端は、処理液タンク６０に接続されている。下流配管６４の下流端は、処理液タンク６０に接続されている。上流配管６２の上流端は、循環配管６１の上流端に相当し、下流配管６４の下流端は、循環配管６１の下流端に相当する。各個別配管４３は、上流配管６２の下流端から下流配管６４の上流端に延びている。 The upstream end of the upstream pipe 62 is connected to the processing liquid tank 60. The downstream end of the downstream pipe 64 is connected to the processing liquid tank 60. The upstream end of the upstream pipe 62 corresponds to the upstream end of the circulation pipe 61, and the downstream end of the downstream pipe 64 corresponds to the downstream end of the circulation pipe 61. Each individual pipe 43 extends from the downstream end of the upstream pipe 62 to the upstream end of the downstream pipe 64.
　複数の個別配管６３は、それぞれ、複数のタワーＴＷに対応している。１つのタワーＴＷに含まれる３つの処理ユニット２２に対応する３つの供給配管５は、１つの個別配管６３に接続されている。 The plurality of individual pipes 63 correspond to the plurality of towers TW, respectively. Three supply pipes 5 corresponding to the three processing units 22 included in one tower TW are connected to one individual pipe 63.
　ポンプ６５は、処理液タンク６０内の処理液を循環配管６１に送る。フィルター６６は、循環配管６１を流れる処理液から異物を除去する。温度調節器６７は、処理液タンク６０内の処理液の温度を調節する。温度調節器６７は、例えば、処理液を加熱するヒーターである。 The pump 65 sends the processing liquid in the processing liquid tank 60 to the circulation pipe 61. The filter 66 removes foreign matter from the processing liquid flowing through the circulation pipe 61. The temperature controller 67 adjusts the temperature of the processing liquid in the processing liquid tank 60. The temperature controller 67 is, for example, a heater that heats the processing solution.
　ポンプ６５、フィルター６６、及び温度調節器６７は、上流配管６２に配置されている。処理液タンク６０内の処理液は、ポンプ６５によって上流配管６２に送られ、上流配管６２から複数の個別配管６３に流れる。個別配管６３内の処理液は、下流配管６４に流れ、下流配管６４から処理液タンク６０に戻る。処理液タンク６０内の処理液は、規定温度ＴＭ以上の特定温度になるように温度調節器６７によって加熱されて上流配管６２に送り込まれる。従って、循環配管６１を循環する処理液の温度は、規定温度ＴＭ以上の特定温度に維持される。 The pump 65, the filter 66, and the temperature controller 67 are disposed in the upstream pipe 62. The treatment liquid in the treatment liquid tank 60 is sent to the upstream pipe 62 by the pump 65, and flows from the upstream pipe 62 to the plurality of individual pipes 63. The processing liquid in the individual piping 63 flows to the downstream piping 64 and returns from the downstream piping 64 to the processing liquid tank 60. The processing liquid in the processing liquid tank 60 is heated by the temperature controller 67 so as to reach a specific temperature equal to or higher than the specified temperature TM and fed to the upstream pipe 62. Therefore, the temperature of the processing liquid circulating in the circulation pipe 61 is maintained at a specific temperature that is equal to or higher than the specified temperature TM.
　そして、循環配管６１内で特定温度に維持されている処理液が、供給配管５に供給される。その結果、実施形態２によれば、積算熱量が所定値ＰＶになるように処理液の吐出時間を制御するという簡素な制御によって、複数の基板Ｗ間で、処理液による処理結果の均一性を向上できる。 Then, the processing liquid maintained at the specific temperature in the circulation pipe 61 is supplied to the supply pipe 5. As a result, according to the second embodiment, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be obtained by the simple control of controlling the discharge time of the processing liquid so that the integrated heat quantity becomes the predetermined value PV. It can improve.
　次に、図１１を参照して、処理液の温度推移について説明する。図１１は、基板処理装置１００Ａでの処理液の温度推移を示す図である。図１１に示すように、横軸は時間を示し、縦軸は処理液の温度を示す。処理液の温度は、温度検出部９によって検出された処理液の温度を示す。曲線Ｂ１は処理液の温度を示し、線Ｂ２はバルブ７の状態を示す。 Next, temperature transition of the processing liquid will be described with reference to FIG. FIG. 11 is a diagram showing temperature transition of the processing liquid in the substrate processing apparatus 100A. As shown in FIG. 11, the horizontal axis indicates time, and the vertical axis indicates the temperature of the processing solution. The temperature of the treatment liquid indicates the temperature of the treatment liquid detected by the temperature detection unit 9. Curve B1 shows the temperature of the processing solution, and line B2 shows the state of the valve 7.
　時刻ｔ１０において、ノズル３が待機位置に位置する状態で、バルブ７が閉状態から開状態にされる。その結果、プリディスペンス処理が開始される。そして、時刻ｔ１１において、バルブ７が開状態から閉状態にされる。その結果、プリディスペンス処理が終了する。時刻ｔ１１において、ノズル３が待機位置から処理位置に向かって移動する。そして、時刻ｔ１２において、ノズル３が処理位置に到達すると、バルブ７が閉状態から開状態にされる。その結果、処理液が基板Ｗに向けて吐出される。さらに、時刻ｔ１３において、バルブ７が閉状態から開状態にされる。その結果、１枚の基板Ｗの処理が終了する。 At time t10, the valve 7 is switched from the closed state to the open state with the nozzle 3 positioned at the standby position. As a result, pre-dispensing processing is started. Then, at time t11, the valve 7 is closed from the open state. As a result, the pre-dispensing process ends. At time t11, the nozzle 3 moves from the standby position toward the processing position. Then, when the nozzle 3 reaches the processing position at time t12, the valve 7 is changed from the closed state to the open state. As a result, the processing liquid is discharged toward the substrate W. Furthermore, at time t13, the valve 7 is switched from the closed state to the open state. As a result, the processing of one substrate W is completed.
　実施形態２では、プリディスペンス処理をすることによって、基板Ｗへの処理液の吐出前に、処理液の温度が規定温度ＴＭ以上になる。そして、プリディスペンス処理の後、時刻ｔ１２以降の期間において、制御部１１は、処理液の温度に基づいてバルブ７を制御して、処理液に基づく積算熱量が所定値ＰＶになるように処理液の吐出時間を制御する。 In the second embodiment, the temperature of the processing liquid becomes equal to or higher than the specified temperature TM before the discharge of the processing liquid onto the substrate W by the pre-dispensing processing. Then, after the pre-dispensing process, in the period after time t12, the control unit 11 controls the valve 7 based on the temperature of the processing liquid so that the integrated heat amount based on the processing liquid becomes the predetermined value PV. Control the discharge time of
　以上、図面を参照しながら本発明の実施形態（変形例を含む。）について説明した。但し、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能である（例えば、下記に示す（１）～（３））。また、上記の実施形態に開示されている複数の構成要素を適宜組み合わせることによって、種々の発明の形成が可能である。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる３実施形態にわたる構成要素を適宜組み合わせてもよい。図面は、理解しやすくするために、それぞれの構成要素を主体に模式的に示しており、図示された各構成要素の厚み、長さ、個数、間隔等は、図面作成の都合上から実際とは異なる場合もある。また、上記の実施形態で示す各構成要素の材質、形状、寸法等は一例であって、特に限定されるものではなく、本発明の効果から実質的に逸脱しない範囲で種々の変更が可能である。 The embodiments (including the modifications) of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiment, and can be carried out in various modes without departing from the scope of the invention (for example, (1) to (3) shown below). In addition, various inventions can be formed by appropriately combining the plurality of components disclosed in the above-described embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, the components in the three different embodiments may be combined as appropriate. In order to facilitate understanding, the drawings schematically show each component as a main component, and the thickness, length, number, spacing, etc. of each component illustrated are actually considered from the convenience of drawing creation. May be different. Further, the materials, shapes, dimensions, and the like of the components shown in the above embodiment are merely examples and are not particularly limited, and various modifications can be made without substantially departing from the effects of the present invention. is there.
　（１）図４及び図６を参照して説明した実施形態１（以下、変形例を含む。）及び実施形態２では、制御部１１は、吐出終了時間テーブルＴＢを参照した。ただし、積算熱量が所定値ＰＶになるように吐出時間を制御する限りにおいては、制御部１１は、温度プロファイルＰＦを参照して、吐出終了時間情報ＳＴを決定してもよい。この場合、記憶部１３は複数の温度プロファイルＰＦを記憶する。 (1) In the first embodiment (hereinafter, including the modified example) and the second embodiment described with reference to FIGS. 4 and 6, the control unit 11 refers to the discharge end time table TB. However, as long as the discharge time is controlled so that the integrated heat amount becomes the predetermined value PV, the control unit 11 may determine the discharge end time information ST with reference to the temperature profile PF. In this case, the storage unit 13 stores a plurality of temperature profiles PF.
　例えば、図３に示すように、制御部１１は、所定検出時刻ｘ１で検出された処理液の温度（以下、「温度Ｔｄ」と記載する場合がある。）を、温度プロファイルＰＦ１～ＰＦ３の各々の所定検出時刻ｘ１での温度Ｔ１～Ｔ３と比較する。そして、制御部１１は、温度Ｔ１～Ｔ３から、温度Ｔｄに最も近い温度（例えば、温度Ｔ１）を選択する。さらに、制御部１１は、選択した温度を有する温度プロファイルＰＦ（例えば、温度プロファイルＰＦ１）を選択する。そして、制御部１１は、選択した温度プロファイルＰＦの始点時刻（例えば、ｔ０）から終点時刻（例えば、ｔｅ１）までの時間を吐出終了時間（つまり、吐出終了時間情報ＳＴ）に決定する。 For example, as shown in FIG. 3, the control unit 11 sets each of the temperature profiles PF1 to PF3 to the temperature of the processing liquid detected at the predetermined detection time x1 (hereinafter sometimes referred to as “temperature Td”). This is compared with the temperatures T1 to T3 at the predetermined detection time x1 of Then, the control unit 11 selects a temperature closest to the temperature Td (for example, the temperature T1) from the temperatures T1 to T3. Furthermore, the control unit 11 selects the temperature profile PF (for example, the temperature profile PF1) having the selected temperature. Then, the control unit 11 determines the time from the start time (for example, t0) of the selected temperature profile PF to the end time (for example, te1) as the discharge end time (that is, discharge end time information ST).
　（２）図１～図１１を参照して説明した実施形態１及び実施形態２では、吐出終了時間情報ＳＴの示す吐出終了時間は、温度プロファイルＰＦの始点時刻から終点時刻までの時間を示したが、処理液の吐出終了時刻を特定できる限りにおいては、吐出終了時間を任意に定義できる。例えば、吐出終了時間は、所定検出時刻から温度プロファイルＰＦの終点時刻までの時間であってもよいし、温度プロファイルＰＦの終点時刻であってもよい。 (2) In the first and second embodiments described with reference to FIGS. 1 to 11, the discharge end time indicated by the discharge end time information ST indicates the time from the start time to the end time of the temperature profile PF. However, the discharge end time can be arbitrarily defined as long as the discharge end time of the treatment liquid can be specified. For example, the discharge end time may be a time from a predetermined detection time to an end time of the temperature profile PF, or may be an end time of the temperature profile PF.
　（３）図１及び図９を参照して説明した実施形態１及び実施形態２では、バルブ７はチャンバー１の外部に配置されたが、ノズル３に対する処理液の供給開始及び供給停止を実現できる限りにおいては、バルブ７はチャンバー１の内部に配置されていてもよい。また、供給配管５にヒーターが配置されていてもよい。供給配管５内の処理液を加熱するためである。ヒーターは、チャンバー１の内部に配置されていてもよいし、チャンバー１の外部に配置されていてもよい。 (3) In the first and second embodiments described with reference to FIGS. 1 and 9, the valve 7 is disposed outside the chamber 1, but the supply start and the supply stop of the processing liquid to the nozzle 3 can be realized. Insofar, the valve 7 may be disposed inside the chamber 1. In addition, a heater may be disposed in the supply pipe 5. This is to heat the processing liquid in the supply pipe 5. The heater may be disposed inside the chamber 1 or may be disposed outside the chamber 1.
　本発明は、基板を処理する基板処理装置及び基板処理方法に関するものであり、産業上の利用可能性を有する。 The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate, and has industrial applicability.
　１　　チャンバー
　３　　ノズル
　５　　供給配管
　７　　バルブ
　９　　温度検出部
　１１　　制御部
　１００、１００Ａ　　基板処理装置
　Ｗ　　基板 1 chamber 3 nozzle 5 supply piping 7 valve 9 temperature detection unit 11 control unit 100, 100A substrate processing apparatus W substrate

Claims (14)

  1. 　基板を処理する基板処理装置であって、
    　前記基板を収容するチャンバーと、
    　前記チャンバー内に配置され、前記基板に向けて処理液を吐出するノズルと、
    　前記ノズルに前記処理液を供給する供給配管と、
    　前記ノズルに向かって前記供給配管内を流れる前記処理液を通過させる開状態と、前記供給配管から前記ノズルへの前記処理液の供給を停止する閉状態とに切り替え可能なバルブと、
    　前記チャンバー内の前記処理液の温度を検出する温度検出部と、
    　前記処理液の温度に基づいて前記バルブを制御して、前記処理液に基づく積算熱量が所定値になるように前記処理液の吐出時間を制御する制御部と
    　を備え、
    　前記積算熱量は、前記基板に投入される前記処理液の熱量の積算値を表す物理量を示す、基板処理装置。     A substrate processing apparatus for processing a substrate, wherein
    A chamber for containing the substrate;
    A nozzle disposed in the chamber for discharging the processing liquid toward the substrate;
    Supply piping for supplying the processing liquid to the nozzle;
    A valve switchable between an open state for passing the treatment liquid flowing in the supply pipe toward the nozzle and a closed state for stopping supply of the treatment liquid from the supply pipe to the nozzle;
    A temperature detection unit that detects the temperature of the processing solution in the chamber;
    A control unit that controls the valve based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value;
    The substrate processing apparatus, wherein the integrated amount of heat indicates a physical quantity representing an integrated value of the amount of heat of the processing liquid supplied to the substrate.
  2. 　前記制御部は、前記バルブが前記開状態から前記閉状態になるように、吐出終了時間情報に基づいて前記バルブを制御し、
    　前記吐出終了時間情報は、温度プロファイルに基づいて予め規定され、前記処理液の吐出終了時間を示し、
    　前記温度プロファイルは、前記処理液と同じ処理液を前記基板と同じ基板に吐出したときに、前記同じ処理液の温度の時間推移を表し、
    　前記吐出終了時間情報の示す前記吐出終了時間は、前記同じ処理液の温度の時間積分値が前記所定値と等しくなる時間を示す、請求項１に記載の基板処理装置。     The control unit controls the valve based on discharge end time information so that the valve is switched from the open state to the closed state,
    The discharge end time information is previously defined based on a temperature profile, and indicates a discharge end time of the treatment liquid,
    The temperature profile represents the time transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is discharged onto the same substrate as the substrate,
    The substrate processing apparatus according to claim 1, wherein the discharge end time indicated by the discharge end time information indicates a time in which a time integral value of the temperature of the same processing liquid is equal to the predetermined value.
  3. 　前記制御部は、前記処理液を前記基板に向けて吐出している期間中に選択処理を実行し、
    　前記選択処理は、複数の前記吐出終了時間情報から、前記処理液の温度に対応する吐出終了時間情報を選択する処理を示し、
    　前記制御部は、前記選択した吐出終了時間情報に基づいて前記バルブを制御して、前記バルブを前記開状態から前記閉状態にし、
    　前記複数の吐出終了時間情報は、それぞれ、互いに異なる複数の前記温度プロファイルに基づいて予め規定されている、請求項２に記載の基板処理装置。     The control unit executes selection processing during a period in which the processing liquid is discharged toward the substrate,
    The selection process is a process of selecting discharge end time information corresponding to the temperature of the processing liquid from a plurality of the discharge end time information.
    The control unit controls the valve based on the selected discharge end time information to change the valve from the open state to the closed state.
    The substrate processing apparatus according to claim 2, wherein the plurality of ejection end time information is defined in advance based on a plurality of different temperature profiles.
  4. 　前記制御部は、前記選択処理を１回だけ実行する、請求項３に記載の基板処理装置。 The substrate processing apparatus according to claim 3, wherein the control unit executes the selection process only once.
  5. 　前記温度検出部は、前記処理液を吐出中の複数の所定検出時刻で前記処理液の温度を検出し、
    　前記制御部は、前記所定検出時刻ごとに、前記所定検出時刻で検出された前記処理液の温度に基づいて前記選択処理を実行する、請求項３に記載の基板処理装置。     The temperature detection unit detects the temperature of the processing liquid at a plurality of predetermined detection times during discharge of the processing liquid,
    The substrate processing apparatus according to claim 3, wherein the control unit executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time, for each of the predetermined detection times.
  6. 　前記処理液は、燐酸、又は、硫酸過酸化水素水混合液を含む、請求項１から請求項５のいずれか１項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 5, wherein the processing liquid contains phosphoric acid or a mixed solution of sulfuric acid and hydrogen peroxide.
  7. 　複数の前記チャンバーが備えられ、
    　前記チャンバーごとに、前記ノズルと前記供給配管と前記バルブと前記温度検出部とが備えられ、
    　前記制御部は、前記チャンバーごとに、前記積算熱量が前記所定値になるように前記処理液の吐出時間を制御する、請求項１から請求項６のいずれか１項に記載の基板処理装置。     A plurality of said chambers are provided,
    The nozzle, the supply pipe, the valve, and the temperature detection unit are provided for each of the chambers,
    The substrate processing apparatus according to any one of claims 1 to 6, wherein the control unit controls the discharge time of the processing liquid such that the integrated heat amount becomes the predetermined value for each chamber.
  8. 　基板を処理する基板処理方法であって、
    　チャンバーに収容された前記基板に向けて処理液を吐出する吐出工程と、
    　前記チャンバー内の前記処理液の温度を検出する検出工程と、
    　前記処理液の温度に基づいて、前記処理液に基づく積算熱量が所定値になるように前記処理液の吐出時間を制御する制御工程と
    　を含み、
    　前記積算熱量は、前記基板に投入される前記処理液の熱量の積算値を表す物理量を示す、基板処理方法。     A substrate processing method for processing a substrate, comprising
    A discharge step of discharging the processing liquid toward the substrate stored in the chamber;
    Detecting the temperature of the processing solution in the chamber;
    Controlling the discharge time of the processing liquid based on the temperature of the processing liquid so that the integrated heat amount based on the processing liquid becomes a predetermined value,
    The substrate processing method, wherein the integrated amount of heat indicates a physical quantity that represents an integrated value of the amount of heat of the processing liquid supplied to the substrate.
  9. 　前記制御工程は、吐出終了時間情報に基づいて前記処理液の吐出を終了する終了工程を含み、
    　前記吐出終了時間情報は、温度プロファイルに基づいて予め規定され、前記処理液の吐出終了時間を示し、
    　前記温度プロファイルは、前記処理液と同じ処理液を前記基板と同じ基板に吐出したときに、前記同じ処理液の温度の時間推移を表し、
    　前記吐出終了時間情報の示す前記吐出終了時間は、前記同じ処理液の温度の時間積分値が前記所定値と等しくなる時間を示す、請求項８に記載の基板処理方法。     The control step includes an end step of ending the discharge of the processing liquid based on discharge end time information,
    The discharge end time information is previously defined based on a temperature profile, and indicates a discharge end time of the treatment liquid,
    The temperature profile represents the time transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is discharged onto the same substrate as the substrate,
    The substrate processing method according to claim 8, wherein the discharge end time indicated by the discharge end time information indicates a time in which a time integral value of the temperature of the same processing liquid is equal to the predetermined value.
  10. 　前記制御工程は、前記処理液を前記基板に向けて吐出している期間中に選択処理を実行する選択工程をさらに含み、
    　前記選択処理は、複数の前記吐出終了時間情報から、前記処理液の温度に対応する吐出終了時間情報を選択する処理を示し、
    　前記終了工程では、前記選択した吐出終了時間情報に基づいて前記処理液の吐出を終了し、
    　前記複数の吐出終了時間情報は、それぞれ、互いに異なる複数の前記温度プロファイルに基づいて予め規定されている、請求項９に記載の基板処理方法。     The control step further includes a selection step of performing selection processing during a period in which the processing liquid is discharged toward the substrate,
    The selection process is a process of selecting discharge end time information corresponding to the temperature of the processing liquid from a plurality of the discharge end time information.
    At the end step, the discharge of the processing liquid is ended based on the selected discharge end time information,
    10. The substrate processing method according to claim 9, wherein the plurality of ejection end time information are defined in advance based on a plurality of different temperature profiles.
  11. 　前記選択工程では、前記選択処理を１回だけ実行する、請求項１０に記載の基板処理方法。 The substrate processing method according to claim 10, wherein in the selection step, the selection process is performed only once.
  12. 　前記検出工程では、前記処理液を吐出中の複数の所定検出時刻で前記処理液の温度を検出し、
    　前記選択工程では、前記所定検出時刻ごとに、前記所定検出時刻で検出された前記処理液の温度に基づいて前記選択処理を実行する、請求項１０に記載の基板処理方法。     In the detection step, the temperature of the processing liquid is detected at a plurality of predetermined detection times during discharge of the processing liquid,
    The substrate processing method according to claim 10, wherein, in the selection step, the selection processing is performed based on the temperature of the processing liquid detected at the predetermined detection time for each of the predetermined detection times.
  13. 　前記処理液は、燐酸、又は、硫酸過酸化水素水混合液を含む、請求項８から請求項１２のいずれか１項に記載の基板処理方法。 The substrate processing method according to any one of claims 8 to 12, wherein the processing liquid contains a phosphoric acid or a mixed solution of sulfuric acid and hydrogen peroxide.
  14. 　前記制御工程では、複数の前記基板をそれぞれ収容する複数の前記チャンバーごとに、前記積算熱量が前記所定値になるように前記処理液の吐出時間を制御する、請求項８から請求項１３のいずれか１項に記載の基板処理方法。 14. The control process according to any one of claims 8 to 13, wherein the discharge time of the processing liquid is controlled such that the integrated heat quantity becomes the predetermined value for each of the plurality of chambers accommodating the plurality of substrates. The substrate processing method according to claim 1 or 2.
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