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CN111316404A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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CN111316404A
CN111316404A CN201880071095.2A CN201880071095A CN111316404A CN 111316404 A CN111316404 A CN 111316404A CN 201880071095 A CN201880071095 A CN 201880071095A CN 111316404 A CN111316404 A CN 111316404A
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CN111316404B (en
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太田乔
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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Abstract

The invention provides a substrate processing apparatus (100) and a substrate processing method. A substrate processing apparatus (100) comprises: a chamber (1), a nozzle (3), a supply pipe (5), a valve (7), a temperature detection unit (9), and a control unit (11). The nozzle (3) discharges a treatment liquid to the substrate (W). The supply pipe (5) supplies the processing liquid to the nozzle (3). The valve (7) can be switched between an open state in which the treatment liquid flowing in the supply pipe (5) passes through the nozzle (3) and a closed state in which the supply of the treatment liquid from the supply pipe (5) to the nozzle (3) is stopped. A temperature detection unit (9) detects the temperature of the processing liquid in the chamber (1). The control unit (11) controls the valve (7) on the basis of the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the cumulative heat amount of the processing liquid becomes a Predetermined Value (PV). The accumulated heat represents a physical quantity representing an accumulated value of the heat of the processing liquid fed to the substrate (W).

Description

基板处理装置及基板处理方法Substrate processing apparatus and substrate processing method

技术领域technical field

本发明涉及一种处理基板的基板处理装置及基板处理方法。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.

背景技术Background technique

专利文献1记载的基板处理装置是对基板逐片进行处理的单片型。而且，基板处理装置将室温的磷酸水溶液与具有较磷酸水溶液的沸点高的温度的高温的硫酸水溶液在供给配管内混合，生成磷酸、硫酸、及水的混合液。与硫酸水溶液混合的磷酸水溶液利用硫酸水溶液的热而被加热。进而，通过将磷酸水溶液与硫酸水溶液混合，产生稀释热。而且，与硫酸水溶液混合的磷酸水溶液不仅利用硫酸水溶液的热被加热，也利用稀释热被加热。因而，混合液中所含的磷酸水溶液被加热至沸点附近，包含沸点附近的磷酸水溶液的混合液(以下，记载为“处理液”)朝基板喷出。其结果，在对形成有氮化硅膜的基板进行蚀刻处理的情况下，可获得高选择比、与高蚀刻速率。若进行规定时间的蚀刻处理，则阀关闭，而停止自喷嘴喷出混合液。The substrate processing apparatus described in Patent Document 1 is a single-wafer type that processes substrates one by one. Then, the substrate processing apparatus mixes the phosphoric acid aqueous solution at room temperature and the high-temperature sulfuric acid aqueous solution having a higher boiling point than the phosphoric acid aqueous solution in the supply piping to generate a mixed solution of phosphoric acid, sulfuric acid, and water. The phosphoric acid aqueous solution mixed with the sulfuric acid aqueous solution is heated by the heat of the sulfuric acid aqueous solution. Furthermore, by mixing the phosphoric acid aqueous solution and the sulfuric acid aqueous solution, heat of dilution is generated. Furthermore, the phosphoric acid aqueous solution mixed with the sulfuric acid aqueous solution is heated not only by the heat of the sulfuric acid aqueous solution but also by the heat of dilution. Therefore, the phosphoric acid aqueous solution contained in the mixed liquid is heated to near the boiling point, and the mixed liquid (hereinafter, referred to as "processing liquid") containing the phosphoric acid aqueous solution near the boiling point is ejected toward the substrate. As a result, when the substrate on which the silicon nitride film is formed is subjected to etching treatment, a high selectivity ratio and a high etching rate can be obtained. When the etching process is performed for a predetermined time, the valve is closed, and the discharge of the mixed liquid from the nozzle is stopped.

现有技术文献prior art literature

专利文献Patent Literature

专利文献1：日本专利特开2012-74601号公报Patent Document 1: Japanese Patent Laid-Open No. 2012-74601

发明内容SUMMARY OF THE INVENTION

发明所要解决的问题The problem to be solved by the invention

但是，在专利文献1记载的基板处理装置中，存在因处理中的基板的周围环境的温度(以下，记载为“环境温度”。)的变动，在多个基板间，处理结果产生些许偏差的可能性。However, in the substrate processing apparatus described in Patent Document 1, there is a possibility that the processing result varies slightly among a plurality of substrates due to fluctuations in the temperature (hereinafter, referred to as "ambient temperature") of the surrounding environment of the substrate being processed. possibility.

具体而言，存在处理中的基板的环境温度的变动对处理液的温度产生些许影响的可能性。特别是在使用高温的处理液的情况下，环境温度与处理液的温度的差大，故环境温度的变动的影响较使用非高温的处理液的情况也变大。Specifically, there is a possibility that fluctuations in the ambient temperature of the substrate being processed have a slight influence on the temperature of the processing liquid. In particular, when a high-temperature processing liquid is used, the difference between the ambient temperature and the temperature of the processing liquid is large, and thus the influence of fluctuations in the environmental temperature is greater than when a non-high-temperature processing liquid is used.

当环境温度的变动对处理液的温度即便产生些许影响时，也存在在多个基板间，处理结果产生些许偏差的可能性。特别是近年来存在要求连处理结果的些许偏差也抑制的情况。换言之，存在要求在多个基板间，处理结果的均一性的进一步提高的情况。Even if the fluctuation of the ambient temperature has a slight influence on the temperature of the processing liquid, there is a possibility that the processing result may vary slightly among a plurality of substrates. In particular, in recent years, it is required to suppress even a slight variation in processing results. In other words, there is a case where further improvement in the uniformity of the processing result is required among a plurality of substrates.

例如，一般而言，在基板处理装置中，在贮存处理液的处理液槽、以及在将处理液供给至基板的准备阶段使处理液循环的循环配管中，进行将处理液调整成规定的温度的措施，或将所述处理液的流量及喷出时间根据处理步骤而设定成规定的值的措施。但是，例如伴随环境温度的变动，实际投入至基板的处理液的温度会产生微妙的变动。其结果，在现有装置中，特别是在利用高温的处理液进行处理的现有装置中，尽管进行了处理液槽及循环配管的温度调整，或进行了处理液的流量及喷出时间的控制，还是会发生在多个基板间处理液的处理结果产生偏差的问题。For example, in general, in a substrate processing apparatus, the processing liquid is adjusted to a predetermined temperature in a processing liquid tank for storing the processing liquid and a circulation pipe for circulating the processing liquid in the preparation stage for supplying the processing liquid to the substrate. measures, or measures to set the flow rate and discharge time of the processing liquid to predetermined values according to the processing steps. However, for example, the temperature of the processing liquid actually put into the substrate may be slightly fluctuated with the fluctuation of the ambient temperature. As a result, in conventional apparatuses, especially in conventional apparatuses that use high-temperature processing liquid, the temperature adjustment of the processing liquid tank and the circulation piping, or the adjustment of the flow rate of the processing liquid and the discharge time are carried out. However, there is a problem that the processing result of the processing liquid varies among a plurality of substrates.

因此，本申请的发明人着眼于累积热量，对在多个基板间处理结果产生偏差的原因进行了详细研究。累积热量表示代表投入至基板的处理液的热量的累积值的物理量。具体而言，累积热量由处理液的温度的时间积分值来表示。Therefore, the inventors of the present application have paid attention to the accumulated heat, and have conducted a detailed study on the cause of variation in processing results among a plurality of substrates. The accumulated heat amount represents a physical quantity representing the accumulated value of the heat amount of the processing liquid supplied to the substrate. Specifically, the accumulated heat amount is represented by a time-integrated value of the temperature of the treatment liquid.

参照图12，对累积热量进行说明。图12是表示一般的基板处理装置中的处理液的温度推移的图。如图12所示，横轴表示时间，纵轴表示处理液的温度。时刻t0表示处理液的喷出开始时刻，时刻te表示处理液的喷出结束时刻。温度Tr表示环境温度。Referring to FIG. 12 , the accumulated heat will be described. FIG. 12 is a diagram showing a temperature transition of a processing liquid in a general substrate processing apparatus. As shown in FIG. 12 , the horizontal axis represents time, and the vertical axis represents the temperature of the treatment liquid. Time t0 indicates the start time of the discharge of the treatment liquid, and time te indicates the end time of the discharge of the treatment liquid. The temperature Tr represents the ambient temperature.

曲线C1表示对第一片基板进行处理时的处理液的温度推移。曲线C2表示对第二片基板进行处理时的处理液的温度推移。曲线C3表示对第三片基板进行处理时的处理液的温度推移。The curve C1 shows the temperature transition of the processing liquid when the first substrate is processed. The curve C2 shows the temperature transition of the processing liquid when the second substrate is processed. Curve C3 shows the temperature transition of the processing liquid when the third substrate is processed.

第一片～第三片基板的处理时间固定(te-t0)。而且，如曲线C1及曲线C2所示，就第一片基板和第二片基板而言，处理液的温度推移大致相同。因而，就第一片基板和第二片基板而言，累积热量大致相同。其结果，就第一片基板和第二片基板而言，处理结果大致相等。The processing time of the first to third substrates is fixed (te-t0). Furthermore, as shown by the curve C1 and the curve C2, the temperature transition of the processing liquid is substantially the same for the first substrate and the second substrate. Therefore, the accumulated heat amount is approximately the same for the first substrate and the second substrate. As a result, the processing results of the first substrate and the second substrate were approximately equal.

但是，如曲线C3所示，因受到环境温度的变动的影响，在某一时间段，针对第三片基板而言的处理液的温度较针对第一片基板而言的处理液的温度稍低。因而，针对第三片基板而言的累积热量较针对第一片基板而言的累积热量稍小。进而，处理结果依存于累积热量。其结果，就第一片基板和第三片基板而言，存在处理结果稍有不同的可能性。However, as shown by the curve C3, due to the influence of the fluctuation of the ambient temperature, the temperature of the processing liquid for the third substrate is slightly lower than the temperature of the processing liquid for the first substrate in a certain period of time . Therefore, the accumulated heat for the third substrate is slightly smaller than the accumulated heat for the first substrate. Furthermore, the processing result depends on the accumulated heat. As a result, there is a possibility that the processing results are slightly different for the first substrate and the third substrate.

以上，如参照图12所说明那样，本申请的发明人查明：当因环境温度的变动的影响而累积热量在多个基板间不同时，存在在多个基板间处理结果产生些许偏差的可能性。As described above with reference to FIG. 12 , the inventors of the present application have found out that when the accumulated heat varies among a plurality of substrates due to the influence of fluctuations in ambient temperature, there is a possibility that the processing results may vary slightly among the plurality of substrates. sex.

因此，本申请的发明人自累积热量的观点出发，对基板处理装置及基板处理方法进行了深入研究。Therefore, the inventors of the present application have intensively studied a substrate processing apparatus and a substrate processing method from the viewpoint of the accumulated heat.

本发明是鉴于所述课题而成，其目的在于提供一种能够提高在多个基板间处理液的处理结果的均一性的基板处理装置及基板处理方法。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method which can improve the uniformity of the processing result of the processing liquid among a plurality of substrates.

解决问题的技术手段technical solutions to problems

根据本发明的一方面，基板处理装置对基板进行处理。基板处理装置包括：腔室、喷嘴、供给配管、阀、温度检测部、及控制部。腔室收容所述基板。喷嘴配置于所述腔室内，向所述基板喷出处理液。供给配管对所述喷嘴供给所述处理液。阀能够切换成打开状态与关闭状态，所述打开状态使在所述供给配管内流动的所述处理液朝向所述喷嘴通过，所述关闭状态使自所述供给配管朝所述喷嘴的所述处理液的供给停止。温度检测部检测所述腔室内的所述处理液的温度。控制部基于所述处理液的温度来控制所述阀，并以基于所述处理液的累积热量成为规定值的方式控制所述处理液的喷出时间。所述累积热量表示代表投入至所述基板的所述处理液的热量的累积值。According to an aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a chamber, a nozzle, a supply pipe, a valve, a temperature detection unit, and a control unit. The chamber accommodates the substrate. The nozzle is arranged in the chamber, and discharges the processing liquid to the substrate. A supply pipe supplies the processing liquid to the nozzle. The valve can be switched between an open state in which the processing liquid flowing in the supply pipe passes toward the nozzle, and a closed state in which the process liquid flowing in the supply pipe passes toward the nozzle, and the closed state in which the valve flows from the supply pipe toward the nozzle. The supply of the treatment liquid is stopped. The temperature detection unit detects the temperature of the processing liquid in the chamber. The control unit controls the valve based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the accumulated heat of the processing liquid becomes a predetermined value. The accumulated heat amount represents an accumulated value representing the heat amount of the processing liquid supplied to the substrate.

在本发明的基板处理装置中，所述控制部优选为以使所述阀自所述打开状态成为所述关闭状态的方式，基于喷出结束时间信息来控制所述阀。所述喷出结束时间信息优选为基于温度剖面图(temperature profile)而预先规定，表示所述处理液的喷出结束时间。所述温度剖面图优选为表示当对与所述基板相同的基板喷出与所述处理液相同的处理液时，所述相同的处理液的温度的时间推移。所述喷出结束时间信息所示的所述喷出结束时间优选为表示所述相同的处理液的温度的时间积分值变得与所述规定值相等的时间。In the substrate processing apparatus of the present invention, it is preferable that the control unit controls the valve based on discharge end time information so that the valve is changed from the open state to the closed state. The discharge end time information is preferably predetermined based on a temperature profile, and indicates the discharge end time of the treatment liquid. It is preferable that the temperature cross-sectional view shows a temporal transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is ejected to the same substrate as the substrate. The discharge end time indicated by the discharge end time information is preferably a time at which a time integral value representing the temperature of the same processing liquid becomes equal to the predetermined value.

在本发明的基板处理装置中，所述控制部优选为在将所述处理液向所述基板喷出的期间中执行选择处理。所述选择处理优选为表示自多个所述喷出结束时间信息中选择与所述处理液的温度对应的喷出结束时间信息的处理。所述控制部优选为基于所述经选择的喷出结束时间信息来控制所述阀，使所述阀自所述打开状态成为所述关闭状态。所述多个喷出结束时间信息优选为分别基于互不相同的多个所述温度剖面图而预先规定。In the substrate processing apparatus of the present invention, it is preferable that the control unit executes the selection process during a period in which the processing liquid is ejected to the substrate. The selection process is preferably a process of selecting the discharge end time information corresponding to the temperature of the processing liquid from the plurality of the discharge end time information. It is preferable that the said control part controls the said valve based on the said selected discharge end time information, and changes the said valve from the said open state to the said closed state. It is preferable that the plurality of discharge end time information are predetermined based on the plurality of temperature profiles that are different from each other.

在本发明的基板处理装置中，所述控制部优选为仅执行一次所述选择处理。In the substrate processing apparatus of the present invention, the control unit preferably executes the selection process only once.

在本发明的基板处理装置中，所述温度检测部优选为在喷出所述处理液的过程中的多个规定检测时刻检测所述处理液的温度。所述控制部优选为针对每个所述规定检测时刻，基于在所述规定检测时刻所检测出的所述处理液的温度来执行所述选择处理。In the substrate processing apparatus of the present invention, it is preferable that the temperature detection unit detects the temperature of the processing liquid at a plurality of predetermined detection timings in the process of discharging the processing liquid. Preferably, the control unit executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time for each predetermined detection time.

在本发明的基板处理装置中，所述处理液优选为包含磷酸、或硫酸过氧化氢水混合液。In the substrate processing apparatus of the present invention, the processing liquid preferably contains phosphoric acid or a mixed liquid of sulfuric acid and hydrogen peroxide.

在本发明的基板处理装置中，优选为包括多个所述腔室。优选为每个所述腔室包括所述喷嘴、所述供给配管、所述阀、及所述温度检测部。所述控制部优选为针对每个所述腔室，以所述累积热量成为所述规定值的方式控制所述处理液的喷出时间。The substrate processing apparatus of the present invention preferably includes a plurality of the chambers. Preferably, each of the chambers includes the nozzle, the supply pipe, the valve, and the temperature detection unit. The control unit preferably controls the discharge time of the processing liquid so that the accumulated heat amount becomes the predetermined value for each of the chambers.

根据本发明的另一方面，基板处理方法是对基板进行处理的方法。基板处理方法包括：喷出步骤，向收容于腔室的所述基板喷出处理液；检测步骤，检测所述腔室内的所述处理液的温度；以及控制步骤，基于所述处理液的温度，以基于所述处理液的累积热量成为规定值的方式控制所述处理液的喷出时间。所述累积热量表示代表投入至所述基板的所述处理液的热量的累积值的物理量。According to another aspect of the present invention, a substrate processing method is a method of processing a substrate. The substrate processing method includes: an ejecting step of ejecting a processing liquid to the substrate accommodated in a chamber; a detection step of detecting a temperature of the processing liquid in the chamber; and a control step based on the temperature of the processing liquid , the discharge time of the treatment liquid is controlled so that the accumulated heat of the treatment liquid becomes a predetermined value. The accumulated heat amount represents a physical quantity representing an accumulated value of the heat amount of the processing liquid supplied to the substrate.

在本发明的基板处理方法中，所述控制步骤优选为包括基于喷出结束时间信息来结束所述处理液的喷出的结束步骤。所述喷出结束时间信息优选为基于温度剖面图而预先规定，表示所述处理液的喷出结束时间。所述温度剖面图优选为表示当对与所述基板相同的基板喷出与所述处理液相同的处理液时，所述相同的处理液的温度的时间推移。所述喷出结束时间信息所示的所述喷出结束时间优选为表示所述相同的处理液的温度的时间积分值变得与所述规定值相等的时间。In the substrate processing method of the present invention, the control step preferably includes an end step of ending the discharge of the processing liquid based on the discharge end time information. The discharge end time information is preferably predetermined based on a temperature profile, and indicates the discharge end time of the processing liquid. It is preferable that the temperature cross-sectional view shows a temporal transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is ejected to the same substrate as the substrate. The discharge end time indicated by the discharge end time information is preferably a time at which a time integral value representing the temperature of the same processing liquid becomes equal to the predetermined value.

在本发明的基板处理方法中，优选为所述控制步骤还包括在将所述处理液向所述基板喷出的期间中执行选择处理的选择步骤。所述选择处理优选为表示自多个所述喷出结束时间信息中选择与所述处理液的温度对应的喷出结束时间信息的处理。在所述结束步骤中，优选为基于所述经选择的喷出结束时间信息来结束所述处理液的喷出。所述多个喷出结束时间信息优选为分别基于互不相同的多个所述温度剖面图而预先规定。In the substrate processing method of the present invention, it is preferable that the control step further includes a selection step of performing a selection process while the processing liquid is ejected to the substrate. The selection process is preferably a process of selecting the discharge end time information corresponding to the temperature of the processing liquid from the plurality of the discharge end time information. In the terminating step, it is preferable to terminate the ejection of the treatment liquid based on the selected ejection end time information. It is preferable that the plurality of discharge end time information are predetermined based on the plurality of temperature profiles that are different from each other.

在本发明的基板处理方法中，在所述选择步骤中优选为仅执行一次所述选择处理。In the substrate processing method of the present invention, in the selection step, the selection process is preferably performed only once.

在本发明的基板处理方法中，在所述检测步骤中优选为，在喷出所述处理液的过程中的多个规定检测时刻检测所述处理液的温度。在所述选择步骤中，优选为针对每个所述规定检测时刻，基于在所述规定检测时刻所检测出的所述处理液的温度来执行所述选择处理。In the substrate processing method of the present invention, in the detection step, preferably, the temperature of the processing liquid is detected at a plurality of predetermined detection timings in the process of discharging the processing liquid. In the selection step, it is preferable that the selection process is executed based on the temperature of the processing liquid detected at the predetermined detection time for every predetermined detection time.

在本发明的基板处理方法中，所述处理液优选为包含磷酸、或硫酸过氧化氢水混合液。In the substrate processing method of the present invention, the processing liquid preferably contains phosphoric acid or a sulfuric acid-hydrogen peroxide mixed liquid.

在本发明的基板处理方法中，在所述控制步骤中，优选为针对分别收容多个所述基板的多个所述腔室，以所述累积热量成为所述规定值的方式控制所述处理液的喷出时间。In the substrate processing method of the present invention, in the control step, it is preferable that the processing is controlled so that the accumulated heat amount becomes the predetermined value with respect to the plurality of chambers in which the plurality of substrates are respectively accommodated. Liquid ejection time.

发明的效果effect of invention

根据本发明，能够提高在多个基板间处理液的处理结果的均一性。According to the present invention, it is possible to improve the uniformity of the processing result of the processing liquid among a plurality of substrates.

附图说明Description of drawings

图1是表示本发明的实施方式1的基板处理装置的图。FIG. 1 is a diagram showing a substrate processing apparatus according to Embodiment 1 of the present invention.

图2是表示实施方式1的基板处理装置中的处理液的温度推移的图。FIG. 2 is a diagram showing a temperature transition of a processing liquid in the substrate processing apparatus according to Embodiment 1. FIG.

图3是表示实施方式1的基板处理装置的温度剖面图的图。3 is a view showing a temperature cross-sectional view of the substrate processing apparatus according to Embodiment 1. FIG.

图4是表示实施方式1的基板处理装置的喷出结束时间表的图。4 is a diagram showing a discharge end schedule of the substrate processing apparatus according to Embodiment 1. FIG.

图5是表示实施方式1的基板处理装置所执行的基板处理方法的流程图。5 is a flowchart showing a substrate processing method executed by the substrate processing apparatus according to Embodiment 1. FIG.

图6是表示实施方式1的变形例的基板处理装置的喷出结束时间表的图。6 is a diagram showing a discharge end schedule of the substrate processing apparatus according to a modification of the first embodiment.

图7是表示变形例的基板处理装置所执行的基板处理方法的流程图。7 is a flowchart showing a substrate processing method executed by the substrate processing apparatus according to the modification.

图8是表示本发明的实施方式2的基板处理装置的平面图。8 is a plan view showing a substrate processing apparatus according to Embodiment 2 of the present invention.

图9是表示实施方式2的基板处理装置的处理单元的内部的图。9 is a view showing the inside of a processing unit of the substrate processing apparatus according to Embodiment 2. FIG.

图10是表示实施方式2的基板处理装置的配管的图。10 is a diagram showing piping of the substrate processing apparatus according to Embodiment 2. FIG.

图11是表示实施方式2的基板处理装置中的处理液的温度推移的图。FIG. 11 is a diagram showing the temperature transition of the processing liquid in the substrate processing apparatus according to Embodiment 2. FIG.

图12是表示一般的基板处理装置中的处理液的温度推移的图。FIG. 12 is a diagram showing a temperature transition of a processing liquid in a general substrate processing apparatus.

具体实施方式Detailed ways

以下，一面参照附图一面对本发明的实施方式进行说明。再者，图中，对相同或相当部分标注相同的参照符号且不重复说明。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, in the drawings, the same reference numerals are attached to the same or corresponding parts, and the description thereof will not be repeated.

(实施方式1)(Embodiment 1)

参照图1～图5对本发明的实施方式1的基板处理装置100进行说明。图1是表示基板处理装置100的图。如图1所示，基板处理装置100对基板W进行处理。具体而言，基板处理装置100是对基板W逐片进行处理的单片型。基板处理装置100包括：腔室1、喷嘴3、供给配管5、阀7、温度检测部9、控制部11、及存储部13。A substrate processing apparatus 100 according to Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 5 . FIG. 1 is a diagram showing a substrate processing apparatus 100 . As shown in FIG. 1 , the substrate processing apparatus 100 processes the substrate W. Specifically, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one. The substrate processing apparatus 100 includes a chamber 1 , a nozzle 3 , a supply pipe 5 , a valve 7 , a temperature detection unit 9 , a control unit 11 , and a storage unit 13 .

腔室1收容基板W。在实施方式1中，基板W为大致圆板状。喷嘴3配置于腔室1内。喷嘴3向基板W喷出处理液。处理液是药液。例如，在基板处理装置100对形成有氮化硅膜的基板执行蚀刻处理的情况下，处理液包含磷酸。例如，在基板处理装置100执行抗蚀剂(resist)的去除处理的情况下，处理液包含硫酸过氧化氢水混合液(sulfuric acid/hydrogen peroxidemixture，SPM)。包含磷酸或SPM的处理液是在高温下使用的处理液的一例。The chamber 1 accommodates the substrate W. In Embodiment 1, the substrate W has a substantially disk shape. The nozzle 3 is arranged in the chamber 1 . The nozzle 3 ejects the processing liquid toward the substrate W. As shown in FIG. The treatment liquid is a medicinal liquid. For example, when the substrate processing apparatus 100 performs an etching process on a substrate on which a silicon nitride film is formed, the processing liquid contains phosphoric acid. For example, in the case where the substrate processing apparatus 100 performs a resist removal process, the processing liquid includes a sulfuric acid/hydrogen peroxide mixture (SPM). A treatment liquid containing phosphoric acid or SPM is an example of a treatment liquid used at a high temperature.

供给配管5连接于喷嘴3。供给配管5对喷嘴3供给处理液。供给至供给配管5的处理液的温度被维持为较室温高的规定温度(以下，记载为“规定温度TM”)以上的特定温度。规定温度TM表示能够对基板W实现规定的处理速率(例如，规定的蚀刻速率或规定的对象物去除速率)的温度。换言之，规定温度TM表示能够对基板W在规定时间内实现规定的处理结果(例如，规定的蚀刻量或规定的对象物去除量)的温度。规定温度TM在包含磷酸的处理液中例如为175℃。规定温度TM在包含SPM的处理液中例如为200℃。The supply pipe 5 is connected to the nozzle 3 . The supply piping 5 supplies the processing liquid to the nozzle 3 . The temperature of the processing liquid supplied to the supply piping 5 is maintained at a predetermined temperature higher than room temperature (hereinafter, referred to as "predetermined temperature TM") or higher than a specific temperature. The predetermined temperature TM represents a temperature at which a predetermined processing rate (for example, a predetermined etching rate or a predetermined object removal rate) can be achieved with respect to the substrate W. FIG. In other words, the predetermined temperature TM represents a temperature at which a predetermined processing result (for example, a predetermined etching amount or a predetermined object removal amount) can be achieved with respect to the substrate W within a predetermined time. The predetermined temperature TM is, for example, 175°C in the treatment liquid containing phosphoric acid. The predetermined temperature TM is, for example, 200° C. in the treatment liquid containing SPM.

阀7配置于供给配管5。阀7是开闭阀，能够切换成打开状态与关闭状态。所谓打开状态是使在供给配管5内流动的处理液朝向喷嘴3通过的状态。所谓关闭状态是使自供给配管5朝喷嘴3的处理液的供给停止的状态。The valve 7 is arranged in the supply pipe 5 . The valve 7 is an on-off valve, and can be switched between an open state and a closed state. The open state refers to a state in which the processing liquid flowing in the supply pipe 5 is passed toward the nozzle 3 . The closed state is a state in which the supply of the treatment liquid from the supply pipe 5 to the nozzle 3 is stopped.

温度检测部9检测腔室1内的处理液的温度。在实施方式1中，温度检测部9检测供给配管5内的处理液的温度。具体而言，温度检测部9的测温部(未图示)接触供给配管5内的处理液，从而检测处理液的温度。温度检测部9优选为在喷嘴3的附近检测供给配管5内的处理液的温度。这是由于温度检测部9检测温度的位置越靠近喷嘴3，检测出的温度越接近基板W上的处理液的温度。The temperature detection unit 9 detects the temperature of the processing liquid in the chamber 1 . In Embodiment 1, the temperature detection unit 9 detects the temperature of the processing liquid in the supply pipe 5 . Specifically, the temperature measurement part (not shown) of the temperature detection part 9 contacts the processing liquid in the supply piping 5, and detects the temperature of the processing liquid. The temperature detection unit 9 preferably detects the temperature of the processing liquid in the supply pipe 5 in the vicinity of the nozzle 3 . This is because the closer the position where the temperature detection unit 9 detects the temperature is to the nozzle 3 , the closer the detected temperature is to the temperature of the processing liquid on the substrate W.

例如，温度检测部9包含温度传感器。温度传感器例如包含热电偶及测量器。具体而言，热电偶插入至供给配管5。而且，热电偶检测供给配管5内的处理液的温度，并将对应于温度的电压信号输出至测量器。测量器将电压信号转变成温度，并将表示温度的信息输出至控制部11。测量器既可配置于腔室1内，也可配置于腔室1外。热电偶的测温接点优选为在供给配管5内，配置于喷嘴3的附近。测温接点相当于温度检测部9的测温部。再者，温度检测部9可通过检测供给配管5的外表面的温度来间接地检测处理液的温度。另外，例如，温度检测部9既可在喷嘴3的内部检测处理液的温度，也可通过检测喷嘴3的外表面的温度来间接地检测处理液的温度。For example, the temperature detection unit 9 includes a temperature sensor. The temperature sensor includes, for example, a thermocouple and a measuring device. Specifically, a thermocouple is inserted into the supply piping 5 . Then, the thermocouple detects the temperature of the processing liquid in the supply piping 5, and outputs a voltage signal corresponding to the temperature to the measuring device. The measuring device converts the voltage signal into temperature, and outputs information indicating the temperature to the control unit 11 . The measuring device may be arranged inside the chamber 1 or outside the chamber 1 . The temperature measuring junction of the thermocouple is preferably arranged in the vicinity of the nozzle 3 in the supply pipe 5 . The temperature measuring contact corresponds to the temperature measuring part of the temperature detecting part 9 . Furthermore, the temperature detection unit 9 can indirectly detect the temperature of the processing liquid by detecting the temperature of the outer surface of the supply pipe 5 . In addition, for example, the temperature detection unit 9 may detect the temperature of the processing liquid inside the nozzle 3 or indirectly detect the temperature of the processing liquid by detecting the temperature of the outer surface of the nozzle 3 .

温度检测部9只要在腔室1内检测处理液的温度，则可在供给配管5以外的位置及喷嘴3以外的位置检测处理液的温度。例如，温度检测部9可在将处理液喷出至基板W后，检测基板W上的处理液的温度。在检测基板W上的处理液的温度的情况下，例如，温度检测部9包含辐射温度计。辐射温度计对自喷出至基板W的处理液放射的红外线或可见光线的强度进行测定，从而测定喷出至基板W的处理液的温度。而且，辐射温度计将表示处理液的温度的信号输出至控制部11。As long as the temperature detection unit 9 detects the temperature of the processing liquid in the chamber 1 , the temperature of the processing liquid can be detected at positions other than the supply piping 5 and positions other than the nozzle 3 . For example, the temperature detection unit 9 may detect the temperature of the processing liquid on the substrate W after the processing liquid is discharged onto the substrate W. When detecting the temperature of the processing liquid on the substrate W, for example, the temperature detection unit 9 includes a radiation thermometer. The radiation thermometer measures the intensity of infrared rays or visible rays radiated from the processing liquid discharged to the substrate W, thereby measuring the temperature of the processing liquid discharged to the substrate W. Then, the radiation thermometer outputs a signal indicating the temperature of the processing liquid to the control unit 11 .

控制部11在向基板W喷出处理液的期间中，基于由温度检测部9检测出的处理液的温度来控制处理液的喷出时间。具体而言，控制部11基于处理液的温度来控制阀7，并以基于处理液的累积热量成为规定值PV的方式控制处理液的喷出时间。通过控制部11的控制而“积热量成为规定值”表示“累积热量变得大致等于规定值”。规定值PV是以能够实现利用处理液的规定的处理结果的方式，例如根据实验和/或经验来确定。The control unit 11 controls the discharge time of the processing liquid based on the temperature of the processing liquid detected by the temperature detection section 9 during the period in which the processing liquid is discharged to the substrate W. Specifically, the control unit 11 controls the valve 7 based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the accumulated heat of the processing liquid becomes a predetermined value PV. "The accumulated heat amount becomes a predetermined value" by the control of the control unit 11 means "the accumulated heat amount becomes substantially equal to the predetermined value". The predetermined value PV is determined based on experiments and/or experience, for example, in such a manner that a predetermined processing result using the processing liquid can be achieved.

参照图2，对累积热量进行说明。图2是表示处理液的温度推移的图。如图2所示，横轴表示时间，纵轴表示处理液的温度。温度Tr表示基板W的周围环境的温度(以下，记载为“环境温度”)。Referring to FIG. 2 , the accumulated heat will be described. FIG. 2 is a graph showing the temperature transition of the treatment liquid. As shown in FIG. 2 , the horizontal axis represents time, and the vertical axis represents the temperature of the treatment liquid. The temperature Tr represents the temperature of the surrounding environment of the substrate W (hereinafter, referred to as "ambient temperature").

曲线C表示利用处理液对基板W进行处理时的处理液的温度推移。处理液的温度表示利用温度检测部9而检测出的温度。在时刻t0开始处理液的喷出。因而，在时刻t0处理液接触温度检测部9的测温部。其结果，利用温度检测部9而检测出的处理液的温度急剧上升。进而，在时刻te结束处理液的喷出，且处理液被反吸(抽吸)。因而，在时刻te处理液远离测温部。其结果，利用温度检测部9而检测出的处理液的温度急剧下降。The curve C shows the temperature transition of the processing liquid when the substrate W is processed with the processing liquid. The temperature of the processing liquid indicates the temperature detected by the temperature detection unit 9 . The discharge of the treatment liquid is started at time t0. Therefore, at the time t0, the processing liquid contacts the temperature measurement part of the temperature detection part 9. As a result, the temperature of the processing liquid detected by the temperature detection unit 9 abruptly rises. Furthermore, the discharge of the treatment liquid is completed at time te, and the treatment liquid is sucked back (suction). Therefore, at time te, the treatment liquid is kept away from the temperature measuring unit. As a result, the temperature of the processing liquid detected by the temperature detection unit 9 drops sharply.

由曲线C包围的区域(斜线区域)的面积表示累积热量。这是因为对基板W进行处理时的处理液的温度与投入至基板W的处理液的热量大致成比例。具体而言，累积热量由对基板W进行处理时的处理液的温度的累积值来表示。换言之，累积热量由处理液的温度的时间积分值来表示。在参照图2进行说明的例子中，累积热量由自时刻t0至时刻te的处理液的温度的时间积分值来表示。进一步换言之，累积热量表示代表投入至基板W的处理液的热量的累积值的物理量。The area of the area (shaded area) surrounded by the curve C represents the accumulated heat. This is because the temperature of the processing liquid when the substrate W is processed is substantially proportional to the amount of heat of the processing liquid supplied to the substrate W. Specifically, the accumulated heat amount is represented by the accumulated value of the temperature of the processing liquid when the substrate W is processed. In other words, the accumulated heat is represented by the time-integrated value of the temperature of the treatment liquid. In the example described with reference to FIG. 2 , the accumulated heat amount is represented by the time-integrated value of the temperature of the processing liquid from time t0 to time te. In other words, the accumulated heat amount represents a physical quantity representing the accumulated value of the heat amount of the processing liquid supplied to the substrate W.

再者，在时刻t0，利用温度检测部9而检测出的处理液的温度为规定温度TM以上。因而，在图2中，累积热量的累积开始时刻为处理液的温度是规定温度TM以上的期间中的任一时刻。累积热量的累积结束时刻是处理液的喷出结束的时刻。Furthermore, at time t0, the temperature of the processing liquid detected by the temperature detection unit 9 is equal to or higher than the predetermined temperature TM. Therefore, in FIG. 2 , the accumulation start time of the accumulated heat is any time in the period during which the temperature of the processing liquid is equal to or higher than the predetermined temperature TM. The accumulation end time of the accumulated heat is the time at which the discharge of the treatment liquid ends.

以上，如参照图1及图2所说明那样，根据实施方式1，控制部11基于处理液的温度来控制阀7，并以累积热量成为规定值PV的方式控制处理液的喷出时间。例如，在利用温度检测部9检测出的处理液的温度与处理液的基准温度大致相等的情况下，将处理液的喷出时间设定为规定时间PT，使累积热量成为规定值PV。处理液的基准温度表示对基板W进行处理时的处理液的温度的基准值。例如，在检测出的处理液的温度较处理液的基准温度低的情况下，使处理液的喷出时间较规定时间PT更长，而使累积热量成为规定值PV。例如，在检测出的处理液的温度较处理液的基准温度更高的情况下，使处理液的喷出时间较规定时间PT更短，而使累积热量成为规定值PV。As described above with reference to FIGS. 1 and 2 , according to Embodiment 1, the control unit 11 controls the valve 7 based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the accumulated heat becomes the predetermined value PV. For example, when the temperature of the processing liquid detected by the temperature detection unit 9 is substantially equal to the reference temperature of the processing liquid, the discharge time of the processing liquid is set to a predetermined time PT, and the accumulated heat amount becomes a predetermined value PV. The reference temperature of the processing liquid indicates a reference value of the temperature of the processing liquid when the substrate W is processed. For example, when the detected temperature of the processing liquid is lower than the reference temperature of the processing liquid, the discharge time of the processing liquid is made longer than the predetermined time PT, and the accumulated heat amount becomes the predetermined value PV. For example, when the detected temperature of the processing liquid is higher than the reference temperature of the processing liquid, the discharge time of the processing liquid is made shorter than the predetermined time PT, and the accumulated heat quantity becomes the predetermined value PV.

因而，即便在基板W的环境温度发生变动的情况下，累积热量也成为规定值PV。即，在多个基板W间，针对一片基板W而言的累积热量固定。因而，利用处理液对基板W进行处理的处理结果依存于环境温度的情况得以抑制。其结果，能够提高在多个基板W间处理液的处理结果的均一性。换言之，能够抑制在多个基板W间处理液的处理结果的偏差。Therefore, even when the ambient temperature of the substrate W fluctuates, the accumulated heat amount becomes the predetermined value PV. That is, among the plurality of substrates W, the accumulated heat for one substrate W is constant. Therefore, it is suppressed that the processing result of the processing of the substrate W with the processing liquid depends on the ambient temperature. As a result, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be improved. In other words, variation in the processing results of the processing liquid among the plurality of substrates W can be suppressed.

另外，根据实施方式1，控制部11的控制对使用高温的处理液(例如，包含磷酸的处理液或包含SPM的处理液)的情况特别有效。这是因为在使用高温的处理液的情况下，环境温度与处理液的温度的差大，故环境温度的变动对处理液的温度带来的影响较使用非高温的处理液的情况变大。根据实施方式1，即便在使用高温的处理液的情况下，也能够提高在多个基板W间处理液的处理结果的均一性。In addition, according to Embodiment 1, the control of the control unit 11 is particularly effective when a high-temperature processing liquid (for example, a processing liquid containing phosphoric acid or a processing liquid containing SPM) is used. This is because when a high-temperature processing liquid is used, the difference between the ambient temperature and the temperature of the processing liquid is large, so that the influence of the fluctuation of the environmental temperature on the temperature of the processing liquid is greater than when a non-high-temperature processing liquid is used. According to Embodiment 1, even when a high-temperature processing liquid is used, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be improved.

继而，参照图1及图3对控制部11更具体地进行说明。如图1所示，控制部11基于喷出结束时间信息ST来控制处理液的喷出时间。喷出结束时间信息ST基于温度剖面图而预先规定，表示累积热量成为规定值PV时的处理液的喷出结束时间。喷出结束时间信息ST所示的喷出结束时间表示确定处理液的喷出结束时刻的时间。即，喷出结束时间信息ST确定处理液的喷出结束时刻。Next, the control unit 11 will be described in more detail with reference to FIGS. 1 and 3 . As shown in FIG. 1 , the control unit 11 controls the discharge time of the processing liquid based on the discharge end time information ST. The discharge end time information ST is predetermined based on the temperature profile, and indicates the discharge end time of the processing liquid when the accumulated heat amount reaches the predetermined value PV. The discharge end time indicated by the discharge end time information ST indicates the time at which the discharge end time of the treatment liquid is determined. That is, the discharge end time information ST specifies the discharge end time of the processing liquid.

具体而言，控制部11在处理液的喷出开始后，以使阀7自打开状态成为关闭状态的方式，基于喷出结束时间信息ST对阀7进行控制。更具体而言，在正在喷出处理液时的当前时刻与通过喷出结束时间信息ST而确定的喷出结束时刻一致时，控制部11以使阀7自打开状态成为关闭状态的方式对其进行控制。其结果，在累积热量成为规定值PV时，处理液的喷出结束。Specifically, the control unit 11 controls the valve 7 based on the discharge end time information ST so that the valve 7 is changed from the open state to the closed state after the discharge of the treatment liquid is started. More specifically, when the current time when the treatment liquid is being discharged matches the discharge end time specified by the discharge end time information ST, the control unit 11 changes the valve 7 from the open state to the closed state. Take control. As a result, when the accumulated heat reaches the predetermined value PV, the discharge of the treatment liquid ends.

继而，参照图3对温度剖面图PF及喷出结束时间信息ST进行说明。图3是表示温度剖面图PF的图。如图3所示，横轴表示时间，纵轴表示处理液的温度。时刻t0表示处理液的喷出开始时刻。时刻te1、时刻te2、及时刻te3表示处理液的喷出结束时刻。温度Tr表示环境温度。处理液的温度表示利用温度检测部9而检测出的温度。Next, the temperature profile PF and the discharge end time information ST will be described with reference to FIG. 3 . FIG. 3 is a diagram showing a temperature profile PF. As shown in FIG. 3 , the horizontal axis represents time, and the vertical axis represents the temperature of the treatment liquid. Time t0 represents the start time of the discharge of the treatment liquid. The time te1, the time te2, and the time te3 represent the discharge end time of the treatment liquid. The temperature Tr represents the ambient temperature. The temperature of the processing liquid indicates the temperature detected by the temperature detection unit 9 .

温度剖面图PF的各个是在对基板W进行处理前根据实验和/或经验预先制作的。温度剖面图PF的各个表示当对与基板W相同的基板喷出与喷出至基板W的处理液相同的处理液(以下，记载为“相同处理液SL”)时，相同处理液SL的温度的时间推移。Each of the temperature profiles PF is prepared in advance experimentally and/or empirically before the substrate W is processed. Each of the temperature profiles PF indicates the temperature of the same processing liquid SL when the same processing liquid (hereinafter, referred to as “the same processing liquid SL”) is discharged to the same substrate as the substrate W as the processing liquid discharged to the substrate W time lapse.

换言之，温度剖面图PF的各个表示喷出过程中的相同处理液SL的温度与喷出经过时间的关系。而且，以基于相同处理液SL的累积热量成为规定值PV的方式，即，以相同处理液SL的温度的时间积分值成为规定值PV的方式规定温度剖面图PF的各个。多个温度剖面图PF的始点时刻(例如t0)彼此相同。温度剖面图PF的始点时刻为相同处理液SL的温度是规定温度TM以上的期间中的任一时刻。在实施方式1中，喷出开始时刻t0与温度剖面图PF的各个的始点时刻一致。多个温度剖面图PF的终点时刻(例如te1～te3)彼此不同。温度剖面图PF的终点时刻为累积热量成为规定值PV的时刻。In other words, each of the temperature profiles PF shows the relationship between the temperature of the same processing liquid SL during the discharge and the discharge elapsed time. Then, each of the temperature profiles PF is defined so that the accumulated heat based on the same processing liquid SL becomes the predetermined value PV, that is, the time-integrated value of the temperature of the same processing liquid SL becomes the predetermined value PV. The starting point times (eg, t0 ) of the plurality of temperature profiles PF are the same as each other. The starting point time of the temperature profile PF is any time in the period in which the temperature of the same processing liquid SL is equal to or higher than the predetermined temperature TM. In Embodiment 1, the ejection start time t0 coincides with the start time of each of the temperature profiles PF. The end times (eg, te1 to te3 ) of the temperature profiles PF are different from each other. The end point time of the temperature profile PF is the time point when the accumulated heat amount reaches the predetermined value PV.

喷出结束时间信息ST所示的喷出结束时间表示在温度剖面图PF的各个中，相同处理液SL的温度的时间积分值变得与规定值PV相等的时间。因而，根据实施方式1，能够通过预先制作温度剖面图PF，而容易地规定喷出结束时间信息ST。The discharge end time indicated by the discharge end time information ST indicates the time at which the time integral value of the temperature of the same processing liquid SL becomes equal to the predetermined value PV in each of the temperature profiles PF. Therefore, according to Embodiment 1, the discharge end time information ST can be easily defined by creating the temperature profile PF in advance.

具体而言，喷出结束时间信息ST针对各温度剖面图PF而不同。即，多个喷出结束时间信息ST分别基于互不相同的多个温度剖面图PF而预先规定。在多个温度剖面图PF中，相同处理液SL的温度的最大值不同。因而，多个温度剖面图PF在互不相同的温度条件下制作。另外，在实施方式1中，喷出结束时间信息ST所示的喷出结束时间表示自温度剖面图PF的始点时刻至终点时刻的时间。Specifically, the discharge end time information ST differs for each temperature profile PF. That is, the plurality of pieces of discharge end time information ST are predetermined based on the plurality of mutually different temperature profiles PF, respectively. In the plurality of temperature profiles PF, the maximum value of the temperature of the same processing liquid SL is different. Therefore, the plurality of temperature profiles PF are produced under mutually different temperature conditions. In addition, in Embodiment 1, the discharge end time indicated by the discharge end time information ST indicates the time from the start time to the end time of the temperature profile PF.

多个温度剖面图PF中，存在如下情况：将根据温度剖面图PF1而规定的喷出结束时间信息ST记载为“喷出结束时间信息ST1”，将根据温度剖面图PF2而规定的喷出结束时间信息ST记载为“喷出结束时间信息ST2”，将根据温度剖面图PF3而规定的喷出结束时间信息ST记载为“喷出结束时间信息ST3”。Among the plurality of temperature profiles PF, there are cases in which the discharge end time information ST specified according to the temperature profile PF1 is described as “discharge end time information ST1”, and the discharge specified according to the temperature profile PF2 ends. The time information ST is described as "discharge end time information ST2", and the discharge end time information ST defined from the temperature profile PF3 is described as "discharge end time information ST3".

喷出结束时间信息ST1表示在温度剖面图PF1中，自相同处理液SL的喷出开始时刻t0至喷出结束时刻te1的时间(喷出结束时间)。喷出结束时刻te1为温度剖面图PF1的终点时刻。即，喷出结束时间信息ST1表示自温度剖面图PF1的始点时刻至终点时刻的时间(喷出结束时间)。The discharge end time information ST1 indicates the time (discharge end time) from the discharge start time t0 of the same process liquid SL to the discharge end time te1 in the temperature profile PF1. The discharge end time te1 is the end time of the temperature profile PF1. That is, the discharge end time information ST1 indicates the time from the start time to the end time of the temperature profile PF1 (the discharge end time).

喷出结束时间信息ST2表示在温度剖面图PF2中，自相同处理液SL的喷出开始时刻t0至喷出结束时刻te2的时间(喷出结束时间)。喷出结束时刻te2为温度剖面图PF2的终点时刻。即，喷出结束时间信息ST2表示自温度剖面图PF2的始点时刻至终点时刻的时间(喷出结束时间)。The discharge end time information ST2 indicates the time (discharge end time) from the discharge start time t0 of the same process liquid SL to the discharge end time te2 in the temperature profile PF2. The discharge end time te2 is the end time of the temperature profile PF2. That is, the discharge end time information ST2 indicates the time from the start time to the end time of the temperature profile PF2 (the discharge end time).

喷出结束时间信息ST3表示在温度剖面图PF3中，自相同处理液SL的喷出开始时刻t0至喷出结束时刻te3的时间(喷出结束时间)。喷出结束时刻te3为温度剖面图PF3的终点时刻。即，喷出结束时间信息ST3表示自温度剖面图PF3的始点时刻至终点时刻的时间(喷出结束时间)。The discharge end time information ST3 indicates the time (discharge end time) from the discharge start time t0 of the same process liquid SL to the discharge end time te3 in the temperature profile PF3. The discharge end time te3 is the end time of the temperature profile PF3. That is, the discharge end time information ST3 indicates the time from the start time to the end time of the temperature profile PF3 (the discharge end time).

控制部11自多个喷出结束时间信息ST中选择任一个喷出结束时间信息ST。即，控制部11在向基板W喷出处理液的期间中执行选择处理。选择处理表示自多个喷出结束时间信息ST中选择与处理液的温度对应的喷出结束时间信息ST的处理。具体而言，选择处理表示自多个喷出结束时间信息ST中选择根据多个温度剖面图PF中最接近处理液的温度的温度剖面图PF而规定的喷出结束时间信息ST的处理。处理液的温度表示在喷出处理液的期间中，利用温度检测部9而检测出的处理液的温度。The control unit 11 selects any one of the discharge end time information ST from the plurality of discharge end time information ST. That is, the control unit 11 executes the selection process while the process liquid is ejected to the substrate W. The selection process represents a process of selecting the discharge end time information ST corresponding to the temperature of the processing liquid from the plurality of discharge end time information ST. Specifically, the selection process represents a process of selecting the discharge end time information ST specified from the temperature profile PF closest to the temperature of the processing liquid among the plurality of temperature profiles PF from the plurality of discharge end time pieces of information ST. The temperature of the processing liquid indicates the temperature of the processing liquid detected by the temperature detection unit 9 during the period in which the processing liquid is ejected.

而且，控制部11基于经选择的喷出结束时间信息ST来控制阀7，以使阀7自打开状态成为关闭状态。其结果，当累积热量成为规定值PV时，处理液的喷出结束。Then, the control unit 11 controls the valve 7 based on the selected discharge end time information ST so that the valve 7 is changed from the open state to the closed state. As a result, when the accumulated heat reaches the predetermined value PV, the discharge of the treatment liquid ends.

以上，如参照图1及图3所说明那样，根据实施方式1，在向基板W喷出处理液的期间中执行选择处理，选择与处理液的温度对应的喷出结束时间信息ST。因而，能够基于与喷出过程中的处理液的温度相应的更适当的喷出结束时间信息ST来控制处理液的喷出时间。其结果，能够进一步提高多个基板W间处理液的处理结果的均一性。As described above with reference to FIGS. 1 and 3 , according to Embodiment 1, the selection process is performed during the period in which the processing liquid is discharged to the substrate W, and the discharge end time information ST corresponding to the temperature of the processing liquid is selected. Therefore, the discharge time of the treatment liquid can be controlled based on the more appropriate discharge end time information ST according to the temperature of the treatment liquid during the discharge. As a result, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be further improved.

继而，一边参照图3列举具体例，一边对基于温度剖面图PF的喷出结束时间的推测进行说明。作为一例，对如下情况进行说明：在对基板W喷出处理液(以下，在喷出结束时间的推测的说明中记载为“处理液Q”)的期间中，在与温度剖面图PF1～温度剖面图PF3的时间轴相同的时间轴上的时刻x1检测出的处理液Q的温度为“Td”。所述情况下，时刻x1处的温度剖面图PF1上的处理液的温度为“T1”。时刻x2处的温度剖面图PF2上的处理液的温度为“T2”。时刻x1处的温度剖面图PF3上的处理液的温度为“T3”。Next, the estimation of the discharge end time based on the temperature profile PF will be described while giving a specific example with reference to FIG. 3 . As an example, a description will be given of a case in which, during the period in which the processing liquid (hereinafter, described as "processing liquid Q" in the description of the estimation of the discharge end time) is discharged to the substrate W, the relationship between the temperature profile PF1 and the temperature The temperature of the processing liquid Q detected at the time x1 on the time axis of the cross-sectional view PF3 is "Td". In this case, the temperature of the processing liquid on the temperature profile PF1 at time x1 is “T1”. The temperature of the processing liquid on the temperature profile PF2 at time x2 is "T2". The temperature of the processing liquid on the temperature profile PF3 at time x1 is "T3".

而且，与温度T1～温度T3中最接近处理液Q的温度Td的温度对应的温度剖面图PF近似于在时刻x1具有温度Td的处理液Q的温度推移。例如，在温度T1～温度T3中最接近处理液Q的温度Td的温度为温度T1的情况下，在时刻x1具有温度T1的温度剖面图PF1近似于处理液Q的温度推移。除此以外，温度剖面图PF1是以累积热量成为规定值PV的方式规定。Furthermore, the temperature profile PF corresponding to the temperature closest to the temperature Td of the processing liquid Q among the temperatures T1 to T3 approximates the temperature transition of the processing liquid Q having the temperature Td at time x1. For example, when the temperature Td closest to the temperature Td of the processing liquid Q among the temperatures T1 to T3 is the temperature T1, the temperature profile PF1 having the temperature T1 at time x1 approximates the temperature transition of the processing liquid Q. In addition, the temperature profile PF1 is defined so that the accumulated heat amount becomes the predetermined value PV.

因而，能够推测基于处理液Q的累积热量成为规定值PV时的喷出结束时间与温度剖面图PF1的自始点时刻t0至终点时刻te1的时间(即，喷出结束时间信息ST1所示的喷出结束时间)大致一致。即，控制部11能够基于处理液Q的温度与温度剖面图PF1来推测处理液Q的喷出结束时间。Therefore, it is possible to estimate the discharge end time and the time from the start point time t0 to the end time time te1 of the temperature profile PF1 when the accumulated heat of the processing liquid Q becomes the predetermined value PV (that is, the discharge end time indicated by the discharge end time information ST1 ) out end time) are roughly the same. That is, the control unit 11 can estimate the discharge end time of the processing liquid Q based on the temperature of the processing liquid Q and the temperature profile PF1.

其结果，控制部11通过基于喷出结束时间信息ST1使阀7自打开状态成为关闭状态，而能够使基于处理液Q的累积热量成为规定值PV，所述喷出结束时间信息ST1是根据在时刻x1最接近处理液Q的温度的温度剖面图PF1而规定。As a result, the control unit 11 can make the accumulated heat quantity based on the processing liquid Q become the predetermined value PV by changing the valve 7 from the open state to the closed state based on the discharge end time information ST1 based on the The time x1 is defined closest to the temperature profile PF1 of the temperature of the processing liquid Q.

继而，参照图3及图4对控制部11在选择处理中参照的喷出结束时间表TB进行说明。图4是表示喷出结束时间表TB的图。如图3及图4所示，存储部13存储喷出结束时间表TB。喷出结束时间表TB是针对规定检测时刻x1而规定，将多个参照温度(实施方式1中为参照温度T1～参照温度T3)分别与多个喷出结束时间信息ST(实施方式1中为喷出结束时间信息ST1～喷出结束时间信息ST3)建立关联。Next, the discharge end timetable TB referred to by the control unit 11 in the selection process will be described with reference to FIGS. 3 and 4 . FIG. 4 is a diagram showing a discharge end timetable TB. As shown in FIGS. 3 and 4 , the storage unit 13 stores the discharge end timetable TB. The discharge end timetable TB is defined for a predetermined detection time x1, and includes a plurality of reference temperatures (reference temperature T1 to reference temperature T3 in Embodiment 1) and a plurality of discharge end time information ST (in Embodiment 1, reference temperature T1 to T3), respectively. The ejection end time information ST1 to the ejection end time information ST3) are associated with each other.

在喷出结束时间表TB中，参照温度T1表示规定检测时刻x1处的温度剖面图PF1上的温度T1。而且，喷出结束时间信息ST1表示自温度剖面图PF1的始点时刻t0至终点时刻te1的时间。In the discharge end timetable TB, the reference temperature T1 indicates the temperature T1 on the temperature profile PF1 at the predetermined detection time x1. Further, the discharge end time information ST1 indicates the time from the start time t0 of the temperature profile PF1 to the end time te1.

在喷出结束时间表TB中，参照温度T2表示规定检测时刻x1处的温度剖面图PF2上的温度T2。而且，喷出结束时间信息ST2表示自温度剖面图PF2的始点时刻t0至终点时刻te2的时间。In the discharge end timetable TB, the reference temperature T2 indicates the temperature T2 on the temperature profile PF2 at the predetermined detection time x1. Further, the discharge end time information ST2 indicates the time from the start time t0 of the temperature profile PF2 to the end time te2.

在喷出结束时间表TB中，参照温度T3表示规定检测时刻x1处的温度剖面图PF3上的温度T3。而且，喷出结束时间信息ST3表示自温度剖面图PF3的始点时刻t0至终点时刻te3的时间。In the discharge end timetable TB, the reference temperature T3 represents the temperature T3 on the temperature profile PF3 at the predetermined detection time x1. Further, the discharge end time information ST3 indicates the time from the start point time t0 of the temperature profile PF3 to the end point time te3.

控制部11在选择处理中，参照喷出结束时间表TB，选择与最接近处理液的温度的参照温度建立了关联的喷出结束时间信息ST。因而，根据实施方式1，通过简单的处理，能够自多个喷出结束时间信息ST容易地选择适当的喷出结束时间信息ST。In the selection process, the control unit 11 refers to the discharge end time table TB, and selects the discharge end time information ST associated with the reference temperature closest to the temperature of the processing liquid. Therefore, according to Embodiment 1, it is possible to easily select appropriate ejection end time information ST from a plurality of ejection end time information STs by simple processing.

再者，在实施方式1中，由于制作了三个温度剖面图PF(温度剖面图PF1～温度剖面图PF3)，因此喷出结束时间表TB具有三个参照温度(参照温度T1～参照温度T3)。其中，温度剖面图PF的数量只要为两个以上，则无特别限定，参照温度的数量只要对应于温度剖面图PF的数量而为两个以上，则也无特别限定。为了以累积热量更高精度地变成规定值PV的方式进行控制，温度剖面图PF的数量与参照温度的数量越多越佳。这是因为能够选择更近似于喷出过程中的处理液的温度的参照温度。Furthermore, in Embodiment 1, since three temperature profiles PF (temperature profiles PF1 to PF3 ) are created, the discharge end schedule TB has three reference temperatures (reference temperature T1 to reference temperature T3 ). ). The number of temperature profiles PF is not particularly limited as long as it is two or more, and the number of reference temperatures is not particularly limited as long as it is two or more corresponding to the number of temperature profiles PF. In order to perform control so that the accumulated heat amount becomes the predetermined value PV with higher accuracy, the number of the temperature profiles PF and the number of reference temperatures are preferably as large as possible. This is because it is possible to select a reference temperature more similar to the temperature of the treatment liquid during the discharge.

继而，参照图1及图5，对基板处理装置100所执行的基板处理方法进行说明。图5是表示基板处理方法的流程图。如图5所示，基板处理方法是对基板W进行处理的方法，其包括步骤S1～步骤S7。Next, a substrate processing method performed by the substrate processing apparatus 100 will be described with reference to FIGS. 1 and 5 . FIG. 5 is a flowchart showing a substrate processing method. As shown in FIG. 5 , the substrate processing method is a method of processing the substrate W, and includes steps S1 to S7 .

在步骤S1中，温度检测部9开始处理液的温度的检测。而且，温度检测部9在对基板W喷出处理液的期间中，检测处理液的温度。温度检测部9将表示处理液的温度的信息输出至控制部11。步骤S1相当于“检测腔室1内的处理液的温度的检测步骤”的一例。In step S1, the temperature detection unit 9 starts detection of the temperature of the processing liquid. In addition, the temperature detection unit 9 detects the temperature of the processing liquid while the processing liquid is being ejected to the substrate W. The temperature detection unit 9 outputs information indicating the temperature of the processing liquid to the control unit 11 . Step S1 corresponds to an example of "the detection step of detecting the temperature of the processing liquid in the chamber 1".

在步骤S3中，喷嘴3开始向基板W喷出处理液。具体而言，控制部11以使阀7自关闭状态成为打开状态的方式对阀7进行控制。步骤S3相当于“向收容于腔室1的基板W喷出处理液的喷出步骤”的一例。In step S3, the nozzle 3 starts to discharge the processing liquid to the substrate W. As shown in FIG. Specifically, the control unit 11 controls the valve 7 so that the valve 7 is changed from the closed state to the open state. Step S3 corresponds to an example of "the ejection step of ejecting the processing liquid to the substrate W accommodated in the chamber 1".

在步骤S5中，控制部11对当前的时刻是否为规定检测时刻x1进行判定。In step S5, the control unit 11 determines whether or not the current time is the predetermined detection time x1.

在作出否定判定的情况(步骤S5中为否(No))下，处理在步骤S5待机。When a negative determination is made (No in step S5 ), the process waits in step S5 .

另一方面，在作出肯定判定的情况(步骤S5中为是(Yes))下，处理进入步骤S7。On the other hand, when an affirmative determination is made (Yes in step S5), the process proceeds to step S7.

在步骤S7中，控制部11基于在规定检测时刻x1检测出的处理液的温度，以基于处理液的累积热量成为规定值PV的方式控制处理液的喷出时间。步骤S7相当于“控制步骤”的一例。In step S7 , the control unit 11 controls the discharge time of the processing liquid so that the accumulated heat of the processing liquid becomes a predetermined value PV based on the temperature of the processing liquid detected at the predetermined detection time x1 . Step S7 corresponds to an example of the "control step".

具体而言，步骤S7包含步骤S71～步骤S75。Specifically, step S7 includes steps S71 to S75.

在步骤S71中，控制部11执行选择处理。具体而言，控制部11参照喷出结束时间表TB(图4)，选择与最接近处理液的温度的参照温度建立了关联的喷出结束时间信息ST。步骤S71相当于“在向基板W喷出处理液的期间中执行选择处理的选择步骤”的一例。In step S71, the control unit 11 executes selection processing. Specifically, the control unit 11 refers to the discharge end time table TB ( FIG. 4 ), and selects the discharge end time information ST associated with the reference temperature closest to the temperature of the processing liquid. Step S71 corresponds to an example of "the selection step of executing the selection process while the processing liquid is being ejected to the substrate W".

在步骤S73中，控制部11对当前的时刻是否成为通过经选择的喷出结束时间信息ST而确定的喷出结束时刻进行判定。In step S73, the control unit 11 determines whether or not the current time is the discharge end time specified by the selected discharge end time information ST.

在作出否定判定的情况(步骤S73中为否(No))下，处理在步骤S73待机。因而，控制部11仅执行一次选择处理。When a negative determination is made (No in step S73 ), the process waits in step S73 . Therefore, the control unit 11 executes the selection process only once.

另一方面，在作出肯定判定的情况(步骤S73中为是(Yes))下，处理进入步骤S75。On the other hand, when an affirmative determination is made (Yes in step S73 ), the process proceeds to step S75 .

在步骤S75中，喷嘴3结束处理液的喷出。具体而言，控制部11以使阀7自打开状态成为关闭状态的方式对阀7进行控制。步骤S75相当于“基于喷出结束时间信息ST来结束处理液的喷出的结束步骤”的一例。In step S75, the nozzle 3 ends the discharge of the treatment liquid. Specifically, the control unit 11 controls the valve 7 so that the valve 7 is changed from the open state to the closed state. Step S75 corresponds to an example of "the end step of ending the discharge of the treatment liquid based on the discharge end time information ST".

以上，如参照图1及图5所说明那样，根据实施方式1，控制部11仅执行一次选择处理。因而，能够通过简单的处理来提高多个基板W间处理液的处理结果的均一性。As described above with reference to FIGS. 1 and 5 , according to Embodiment 1, the control unit 11 executes the selection process only once. Therefore, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be improved by simple processing.

再者，控制部11包含如中央处理器(Central Processing Unit，CPU)那样的处理器。存储部13包含存储装置，存储数据及计算机程序。存储部13包含：如半导体存储器那样的主存储装置、以及如半导体存储器和/或硬盘驱动器那样的辅助存储装置。存储部13也可包含可移媒体。控制部11的处理器执行存储部13的存储装置所存储的计算机程序，来执行基板处理方法。Furthermore, the control unit 11 includes a processor such as a central processing unit (CPU). The storage unit 13 includes a storage device, and stores data and computer programs. The storage unit 13 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory and/or a hard disk drive. The storage unit 13 may include removable media. The processor of the control unit 11 executes the computer program stored in the storage device of the storage unit 13 to execute the substrate processing method.

(变形例)(Variation)

参照图1、图6及图7对实施方式1的变形例的基板处理装置100进行说明。变形例与实施方式1的不同点在于，变形例执行多次选择处理。以下，主要对变形例与实施方式1的不同点进行说明。A substrate processing apparatus 100 according to a modification of Embodiment 1 will be described with reference to FIGS. 1 , 6 , and 7 . The modification example is different from Embodiment 1 in that the modification example performs multiple selection processing. Hereinafter, the difference between the modified example and the first embodiment will be mainly described.

如图1所示，温度检测部9在喷出处理液的过程中的多个规定检测时刻检测处理液的温度。而且，控制部11针对每个规定检测时刻，基于在规定检测时刻所检测出的处理液的温度来执行选择处理。其结果，根据变形例，即便在伴随时间的经过处理液的温度发生了变动的情况下，也能够针对每个规定检测时刻，选择与处理液的温度相应的适当的喷出结束时间信息ST。其结果，能够进一步提高多个基板W间处理液的处理结果的均一性。As shown in FIG. 1 , the temperature detection unit 9 detects the temperature of the processing liquid at a plurality of predetermined detection timings in the process of discharging the processing liquid. Then, the control unit 11 executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time for each predetermined detection time. As a result, according to the modification, even when the temperature of the processing liquid varies with time, it is possible to select appropriate discharge end time information ST according to the temperature of the processing liquid for each predetermined detection time. As a result, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be further improved.

继而，参照图3及图6对控制部11在选择处理中参照的喷出结束时间表TB进行说明。图6是表示喷出结束时间表TB的图。如图3及图6所示，存储部13存储互不相同的多个喷出结束时间表TB。Next, the discharge end timetable TB that the control unit 11 refers to in the selection process will be described with reference to FIGS. 3 and 6 . FIG. 6 is a diagram showing a discharge end timetable TB. As shown in FIGS. 3 and 6 , the storage unit 13 stores a plurality of discharge end timetables TB that are different from each other.

多个喷出结束时间表TB(喷出结束时间表TB1～喷出结束时间表TBN)是分别针对多个规定检测时刻(规定检测时刻x1～规定检测时刻xN)而规定。“N”表示2以上的整数。在变形例中，“N”为3以上的整数。The plurality of discharge end timetables TB (discharge end timetable TB1 to discharge end timetable TBN) are respectively defined for a plurality of predetermined detection times (predetermined detection time x1 to predetermined detection time xN). "N" represents an integer of 2 or more. In a modification, "N" is an integer of 3 or more.

喷出结束时间表TB1是针对规定检测时刻x1而规定，将多个参照温度(变形例中为参照温度T1～参照温度T3)分别与多个喷出结束时间信息ST(变形例中为喷出结束时间信息ST1～喷出结束时间信息ST3)建立关联。喷出结束时间表TB1与参照图4所说明的喷出结束时间表TB相同。The discharge end timetable TB1 is defined for a predetermined detection time x1, and includes a plurality of reference temperatures (reference temperature T1 to reference temperature T3 in the modification) and a plurality of discharge end time information ST (discharge in the modification), respectively. The end time information ST1 to the discharge end time information ST3) are associated with each other. The discharge end timetable TB1 is the same as the discharge end timetable TB described with reference to FIG. 4 .

喷出结束时间表TB2是针对规定检测时刻x2而规定，将多个参照温度(变形例中为参照温度T4～参照温度T6)分别与多个喷出结束时间信息ST(变形例中为喷出结束时间信息ST1～喷出结束时间信息ST3)建立关联。而且，参照温度T4表示规定检测时刻x2处的温度剖面图PF1上的温度T4。参照温度T5表示规定检测时刻x2处的温度剖面图PF2上的温度T5。参照温度T6表示规定检测时刻x3处的温度剖面图PF3上的温度T6。The discharge end timetable TB2 is defined for a predetermined detection time x2, and includes a plurality of reference temperatures (reference temperature T4 to reference temperature T6 in the modification) and a plurality of discharge end time information ST (discharge in the modification), respectively. The end time information ST1 to the discharge end time information ST3) are associated with each other. In addition, the reference temperature T4 represents the temperature T4 on the temperature profile PF1 at the predetermined detection time x2. The reference temperature T5 represents the temperature T5 on the temperature profile PF2 at the predetermined detection time x2. The reference temperature T6 represents the temperature T6 on the temperature profile PF3 at the predetermined detection time x3.

喷出结束时间表TB3～喷出结束时间表TBN设为与喷出结束时间表TB1及喷出结束时间表TB2同样，并基于温度剖面图PF1～温度剖面图PF3来制作。The discharge end timetable TB3 to the discharge end timetable TBN are created based on the temperature profiles PF1 to PF3 in the same manner as the discharge end timetable TB1 and the discharge end timetable TB2.

控制部11在选择处理中，针对每个规定检测时刻，参照针对规定检测时刻而规定的喷出结束时间表TB，选择与最接近处理液的温度的参照温度建立了关联的喷出结束时间信息ST。In the selection process, the control unit 11 refers to the discharge end timetable TB defined for the predetermined detection time for each predetermined detection time, and selects the discharge end time information associated with the reference temperature closest to the temperature of the processing liquid. st.

再者，温度剖面图PF的数量只要为两个以上，则无特别限定，在喷出结束时间表TB的各者中，参照温度的数量只要对应于温度剖面图PF的数量而为两个以上，则也无特别限定。In addition, the number of temperature profiles PF is not particularly limited as long as it is two or more, and in each of the discharge end timetables TB, the number of reference temperatures is two or more as long as it corresponds to the number of temperature profiles PF. , there is no particular limitation.

继而，参照图1及图7，对变形例的基板处理装置100所执行的基板处理方法进行说明。图7是表示基板处理方法的流程图。如图7所示，基板处理方法是对基板W进行处理的方法，包括步骤S11～步骤S17。Next, referring to FIGS. 1 and 7 , a description will be given of a substrate processing method performed by the substrate processing apparatus 100 according to the modification. FIG. 7 is a flowchart showing a substrate processing method. As shown in FIG. 7 , the substrate processing method is a method of processing the substrate W, and includes steps S11 to S17.

在步骤S11中，温度检测部9开始处理液的温度的检测。而且，温度检测部9在喷出处理液的过程中的多个规定检测时刻检测处理液的温度。步骤S11与步骤S1(图5)同样，相当于“检测步骤”的一例。In step S11, the temperature detection unit 9 starts detection of the temperature of the processing liquid. Then, the temperature detection unit 9 detects the temperature of the processing liquid at a plurality of predetermined detection timings in the process of discharging the processing liquid. Like step S1 ( FIG. 5 ), step S11 corresponds to an example of the “detection step”.

在步骤S13中，喷嘴3开始向基板W喷出处理液。步骤S13与步骤S3(图5)同样，相当于“喷出步骤”的一例。In step S13, the nozzle 3 starts to discharge the processing liquid to the substrate W. As shown in FIG. Step S13 corresponds to an example of the "discharge step" as in step S3 ( FIG. 5 ).

在步骤S15中，控制部11对当前的时刻是否成为多个规定检测时刻中的任一规定检测时刻进行判定。In step S15 , the control unit 11 determines whether or not the current time is any predetermined detection time among a plurality of predetermined detection times.

在作出否定判定的情况(步骤S15中为否(No))下，处理在步骤S15待机。When a negative determination is made (No in step S15 ), the process waits in step S15 .

另一方面，在作出肯定判定的情况(步骤S15中为是(Yes))下，处理进入步骤S17。On the other hand, when an affirmative determination is made (Yes in step S15), the process proceeds to step S17.

在步骤S17中，控制部11基于在规定检测时刻检测出的处理液的温度，以基于处理液的累积热量成为规定值PV的方式控制处理液的喷出时间。步骤S17与步骤S7(图5)同样，相当于“控制步骤”的一例。In step S17 , based on the temperature of the processing liquid detected at the predetermined detection timing, the control unit 11 controls the discharge time of the processing liquid so that the accumulated heat of the processing liquid becomes a predetermined value PV. Step S17 corresponds to an example of a "control step", similarly to step S7 ( FIG. 5 ).

具体而言，步骤S17包含步骤S171～步骤S175。Specifically, step S17 includes steps S171 to S175.

在步骤S171中，控制部11基于在规定检测时刻所检测出的处理液的温度来执行选择处理。具体而言，控制部11参照多个喷出结束时间表TB(图6)中的针对规定检测时刻而规定的喷出结束时间表TB，选择与最接近处理液的温度的参照温度建立了关联的喷出结束时间信息ST。例如，在步骤S15中判定为当前的时刻为规定检测时刻x1的情况下，控制部11参照针对规定检测时刻x1而规定的喷出结束时间表TB1。步骤S171相当于“选择步骤”的一例。In step S171, the control unit 11 executes the selection process based on the temperature of the processing liquid detected at the predetermined detection timing. Specifically, the control unit 11 refers to the discharge end timetable TB specified for the predetermined detection time among the plurality of discharge end timetables TB ( FIG. 6 ), and selects the reference temperature associated with the temperature closest to the processing liquid. of the ejection end time information ST. For example, when it is determined in step S15 that the current time is the predetermined detection time x1, the control unit 11 refers to the discharge end timetable TB1 defined for the predetermined detection time x1. Step S171 corresponds to an example of the "selection step".

在步骤S173中，控制部11对当前的时刻是否成为通过经选择的喷出结束时间信息ST而确定的喷出结束时刻进行判定。In step S173, the control unit 11 determines whether or not the current time is the discharge end time specified by the selected discharge end time information ST.

在作出否定判定的情况(步骤S173中为否(No))下，处理返回至步骤S15。In the case where a negative determination is made (No in step S173 ), the process returns to step S15 .

另一方面，在作出肯定判定的情况(步骤S173中为是(Yes))下，处理进入步骤S175。On the other hand, when an affirmative determination is made (Yes in step S173 ), the process proceeds to step S175 .

在步骤S175中，喷嘴3结束处理液的喷出。步骤S175与步骤S75(图5)同样，相当于“结束步骤”的一例。In step S175, the nozzle 3 ends the discharge of the treatment liquid. Like step S75 ( FIG. 5 ), step S175 corresponds to an example of the “end step”.

再者，控制部11的处理器执行存储部13的存储装置所存储的计算机程序，从而执行基板处理方法。Furthermore, the processor of the control unit 11 executes the computer program stored in the storage device of the storage unit 13 to execute the substrate processing method.

(实施方式2)(Embodiment 2)

参照图8～图11对本发明的实施方式2的基板处理装置100A进行说明。实施方式2与实施方式1及变形例的不同点在于，实施方式2包括多个腔室1。以下，主要对实施方式2与实施方式1及变形例的不同点进行说明。再者，在图8～图10中，为了容易理解，记载有相互正交的X轴、Y轴及Z轴。X轴及Y轴与水平方向平行，Z轴与铅垂方向平行。A substrate processing apparatus 100A according to Embodiment 2 of the present invention will be described with reference to FIGS. 8 to 11 . Embodiment 2 is different from Embodiment 1 and the modification in that Embodiment 2 includes a plurality of chambers 1 . Hereinafter, the differences between Embodiment 2 and Embodiment 1 and modifications will be mainly described. In addition, in FIG. 8 - FIG. 10, in order to understand easily, the X-axis, Y-axis, and Z-axis which are orthogonal to each other are described. The X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

首先，参照图8对基板处理装置100A进行说明。图8是表示基板处理装置100A的平面图。如图8所示，基板处理装置100A包括：多个装载口LP、分度器机器人IR、中心机器人CR、多个处理单元22、多个流体箱24、处理液盒(cabinet)26、以及控制装置28。控制装置28对装载口LP、分度器机器人IR、中心机器人CR、及处理单元22进行控制。控制装置28包含控制部11与存储部13。First, the substrate processing apparatus 100A will be described with reference to FIG. 8 . FIG. 8 is a plan view showing the substrate processing apparatus 100A. As shown in FIG. 8 , the substrate processing apparatus 100A includes: a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of processing units 22 , a plurality of fluid tanks 24 , a process cabinet 26 , and a control device 28 . The control device 28 controls the load port LP, the indexer robot IR, the center robot CR, and the processing unit 22 . The control device 28 includes the control unit 11 and the storage unit 13 .

装载口LP的各者将多片基板W层叠来收容。分度器机器人IR在装载口LP与中心机器人CR之间搬送基板W。中心机器人CR在分度器机器人IR与处理单元22之间搬送基板W。处理单元22的各者对基板W喷出处理液，对基板W进行处理。流体箱24的各者收容流体机器。处理液盒26收容处理液。In each of the load ports LP, a plurality of substrates W are stacked and accommodated. The indexer robot IR transfers the substrate W between the load port LP and the center robot CR. The center robot CR transfers the substrate W between the indexer robot IR and the processing unit 22 . Each of the processing units 22 discharges the processing liquid to the substrate W to process the substrate W. As shown in FIG. Each of the fluid tanks 24 accommodates a fluid machine. The processing liquid cartridge 26 accommodates the processing liquid.

具体而言，多个处理单元22形成以在俯视下包围中心机器人CR的方式配置的多个塔(tower)TW(实施方式2中为四个塔TW)。各塔TW包含上下层叠的多个处理单元22(实施方式2中为三个处理单元22)。多个流体箱24分别与多个塔TW对应。处理液盒26内的处理液经由任一个流体箱24而被供给至与流体箱24对应的塔TW所包含的所有的处理单元22。Specifically, the plurality of processing units 22 form a plurality of towers TW (four towers TW in Embodiment 2) arranged so as to surround the center robot CR in plan view. Each tower TW includes a plurality of processing units 22 (three processing units 22 in Embodiment 2) stacked up and down. The plurality of fluid tanks 24 correspond to the plurality of towers TW, respectively. The processing liquid in the processing liquid cartridge 26 is supplied to all the processing units 22 included in the column TW corresponding to the fluid tank 24 via any one of the fluid tanks 24 .

继而，参照图9，对处理单元22进行说明。图9是表示处理单元22的内部的图。如图9所示，处理单元22包括：腔室1、喷嘴3、温度检测部9、旋转卡盘30、杯体32、待机口34、以及喷嘴移动单元36。基板处理装置100A包含：供给配管5、阀7、流量计38、以及流量调整阀40。Next, the processing unit 22 will be described with reference to FIG. 9 . FIG. 9 is a diagram showing the inside of the processing unit 22 . As shown in FIG. 9 , the processing unit 22 includes a chamber 1 , a nozzle 3 , a temperature detection unit 9 , a spin chuck 30 , a cup body 32 , a standby port 34 , and a nozzle moving unit 36 . The substrate processing apparatus 100A includes the supply piping 5 , the valve 7 , the flow meter 38 , and the flow rate adjustment valve 40 .

腔室1具有大致箱形状。旋转卡盘30在腔室1内一边水平地保持基板W，一边使基板W绕旋转轴线A1旋转。杯体32具有大致筒形状。杯体32接收自基板W中排出的处理液。The chamber 1 has a substantially box shape. The spin chuck 30 rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally in the chamber 1 . The cup body 32 has a substantially cylindrical shape. The cup body 32 receives the processing liquid discharged from the substrate W.

待机口34配置于喷嘴3的待机位置的下方。待机位置表示相对于旋转轴线A1而较旋转卡盘30更靠外侧的第一规定位置。喷嘴移动单元36绕转动轴线A2转动，并使喷嘴3水平地移动。具体而言，喷嘴移动单元36在喷嘴3的待机位置与处理位置之间，使喷嘴3水平地移动。处理位置表示基板W的上方的第二规定位置。The standby port 34 is arranged below the standby position of the nozzle 3 . The stand-by position represents a first predetermined position outside the spin chuck 30 with respect to the rotation axis A1. The nozzle moving unit 36 rotates about the rotation axis A2 and moves the nozzle 3 horizontally. Specifically, the nozzle moving unit 36 horizontally moves the nozzle 3 between the standby position of the nozzle 3 and the processing position. The processing position represents a second predetermined position above the substrate W.

对喷嘴3的处理液的供给开始及供给停止是通过阀7来切换。供给至喷嘴3的处理液的流量通过流量计38来检测。流量能够通过流量调整阀40来变更。当阀7成为打开状态时，处理液以与流量调整阀40的开度对应的流量自供给配管5被供给至喷嘴3。其结果，自喷嘴3喷出处理液。开度表示流量调整阀40已打开的程度。The start and stop of the supply of the treatment liquid to the nozzles 3 are switched by the valve 7 . The flow rate of the processing liquid supplied to the nozzle 3 is detected by the flow meter 38 . The flow rate can be changed by the flow rate adjustment valve 40 . When the valve 7 is in the open state, the processing liquid is supplied from the supply pipe 5 to the nozzle 3 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 40 . As a result, the treatment liquid is ejected from the nozzle 3 . The opening degree represents the degree to which the flow rate adjustment valve 40 has been opened.

喷嘴3在对基板W喷出处理液前，执行预分配(pre-dispense)处理。所谓预分配处理是对基板W喷出处理液前，向待机口34喷出处理液的处理。The nozzle 3 performs a pre-dispense process before ejecting the process liquid to the substrate W. As shown in FIG. The pre-dispensing process is a process of discharging the processing liquid to the standby port 34 before discharging the processing liquid to the substrate W. As shown in FIG.

控制部11与参照图1～图5所说明的实施方式1的控制部11、或参照图6及图7所说明的变形例的控制部11同样地运行。因而，根据实施方式2，与实施方式1或变形例同样地，能够提高在一个腔室1中逐片地进行处理的多个基板W间，处理液的处理结果的均一性。The control unit 11 operates in the same manner as the control unit 11 of the first embodiment described with reference to FIGS. 1 to 5 or the control unit 11 of the modification example described with reference to FIGS. 6 and 7 . Therefore, according to the second embodiment, as in the first embodiment or the modification, the uniformity of the processing result of the processing liquid can be improved among the plurality of substrates W that are processed one by one in one chamber 1 .

另外，在实施方式2中，基板处理装置100A针对每个腔室1而包括：喷嘴3、供给配管5、阀7及温度检测部9。而且，控制部11针对分别收容多个基板W的多个腔室1，以累积热量成为规定值PV的方式控制处理液的喷出时间。因而，在多个腔室1，利用处理液对基板W进行处理的处理结果依存于环境温度的情况得以抑制。其结果，能够提高在多个腔室1进行处理的多个基板W间，处理液的处理结果的均一性。例如，能够提高在一个塔TW内的多个腔室1间，利用处理液对多个基板W进行处理的处理结果的均一性。例如，能够提高在多个塔TW间，利用处理液对多个基板W进行处理的处理结果的均一性。再者，基板处理装置100A针对每个腔室1而执行图5所示的基板处理方法。或者，基板处理装置100A针对每个腔室1而执行图7所示的基板处理方法。In addition, in Embodiment 2, the substrate processing apparatus 100A includes the nozzle 3 , the supply piping 5 , the valve 7 , and the temperature detection unit 9 for each of the chambers 1 . Then, the control unit 11 controls the discharge time of the processing liquid so that the accumulated heat amount becomes a predetermined value PV with respect to the plurality of chambers 1 in which the plurality of substrates W are respectively accommodated. Therefore, in the plurality of chambers 1, it is suppressed that the processing result of the processing of the substrate W with the processing liquid depends on the ambient temperature. As a result, the uniformity of the processing result of the processing liquid among the plurality of substrates W processed in the plurality of chambers 1 can be improved. For example, it is possible to improve the uniformity of the processing results of processing the plurality of substrates W with the processing liquid among the plurality of chambers 1 in one tower TW. For example, it is possible to improve the uniformity of the processing results of processing the plurality of substrates W with the processing liquid among the plurality of towers TW. Furthermore, the substrate processing apparatus 100A executes the substrate processing method shown in FIG. 5 for each chamber 1 . Alternatively, the substrate processing apparatus 100A executes the substrate processing method shown in FIG. 7 for each chamber 1 .

继而，参照图10，对处理液朝喷嘴3的供给进行说明。图10是表示基板处理装置100A的配管的图。如图10所示，在各塔TW中，针对每个处理单元22，基板处理装置100A包括：供给配管5、阀7、流量计38、及流量调整阀40。阀7、流量计38及流量调整阀40被收容于与塔TW对应的流体箱24。各供给配管5的一部分被收容于流体箱24内，各供给配管5的其他部分被收容于腔室1。Next, the supply of the processing liquid to the nozzle 3 will be described with reference to FIG. 10 . FIG. 10 is a diagram showing piping of the substrate processing apparatus 100A. As shown in FIG. 10 , in each tower TW, the substrate processing apparatus 100A includes a supply pipe 5 , a valve 7 , a flow meter 38 , and a flow rate adjustment valve 40 for each processing unit 22 . The valve 7 , the flow meter 38 , and the flow rate adjustment valve 40 are accommodated in the fluid tank 24 corresponding to the tower TW. A part of each supply pipe 5 is accommodated in the fluid tank 24 , and the other part of each supply pipe 5 is accommodated in the chamber 1 .

另外，基板处理装置100A包括：处理液槽60、循环配管61、泵65、过滤器66、及温度调节器67。处理液槽60、泵65、过滤器66、及温度调节器67收容于处理液盒26。循环配管61的一部分被收容于处理液盒26内，循环配管61的其他部分被收容于流体箱24。In addition, the substrate processing apparatus 100A includes a processing liquid tank 60 , a circulation piping 61 , a pump 65 , a filter 66 , and a temperature regulator 67 . The processing liquid tank 60 , the pump 65 , the filter 66 , and the temperature regulator 67 are accommodated in the processing liquid cartridge 26 . A part of the circulation piping 61 is accommodated in the processing liquid cartridge 26 , and the other part of the circulation piping 61 is accommodated in the fluid tank 24 .

循环配管61包括：自处理液槽60向下游延伸的上游配管62、自上游配管62分支的多个个别配管63、及自各个别配管63向下游延伸至处理液槽60的下游配管64。The circulation piping 61 includes an upstream piping 62 extending downstream from the processing liquid tank 60 , a plurality of individual piping 63 branched from the upstream piping 62 , and downstream piping 64 extending downstream from each individual piping 63 to the processing liquid tank 60 .

上游配管62的上游端连接于处理液槽60。下游配管64的下游端连接于处理液槽60。上游配管62的上游端相当于循环配管61的上游端，下游配管64的下游端相当于循环配管61的下游端。各个别配管63自上游配管62的下游端延伸至下游配管64的上游端。The upstream end of the upstream piping 62 is connected to the processing liquid tank 60 . The downstream end of the downstream piping 64 is connected to the processing liquid tank 60 . The upstream end of the upstream pipe 62 corresponds to the upstream end of the circulation pipe 61 , and the downstream end of the downstream pipe 64 corresponds to the downstream end of the circulation pipe 61 . Each individual pipe 63 extends from the downstream end of the upstream pipe 62 to the upstream end of the downstream pipe 64 .

多个个别配管63分别与多个塔TW对应。与一个塔TW中包含的三个处理单元22对应的三个供给配管5连接于一个个别配管63。The plurality of individual pipes 63 correspond to the plurality of towers TW, respectively. The three supply pipes 5 corresponding to the three processing units 22 included in one tower TW are connected to one individual pipe 63 .

泵65将处理液槽60内的处理液输送至循环配管61。过滤器66自在循环配管61内流动的处理液中去除异物。温度调节器67调节处理液槽60内的处理液的温度。温度调节器67例如为对处理液进行加热的加热器。The pump 65 sends the treatment liquid in the treatment liquid tank 60 to the circulation piping 61 . The filter 66 removes foreign matter from the processing liquid flowing in the circulation pipe 61 . The temperature regulator 67 adjusts the temperature of the processing liquid in the processing liquid tank 60 . The temperature regulator 67 is, for example, a heater that heats the processing liquid.

泵65、过滤器66、及温度调节器67配置于上游配管62。处理液槽60内的处理液通过泵65而被输送至上游配管62，并自上游配管62流动至多个个别配管63。个别配管63内的处理液朝下游配管64流动，并自下游配管64返回至处理液槽60。处理液槽60内的处理液以成为规定温度TM以上的特定温度的方式通过温度调节器67而被加热，并被输入至上游配管62。因而，在循环配管61内循环的处理液的温度被维持为规定温度TM以上的特定温度。The pump 65 , the filter 66 , and the temperature regulator 67 are arranged on the upstream piping 62 . The treatment liquid in the treatment liquid tank 60 is sent to the upstream pipe 62 by the pump 65 , and flows from the upstream pipe 62 to the plurality of individual pipes 63 . The processing liquid in the individual piping 63 flows toward the downstream piping 64 and is returned to the processing liquid tank 60 from the downstream piping 64 . The processing liquid in the processing liquid tank 60 is heated by the temperature regulator 67 so that it may become a specific temperature equal to or higher than the predetermined temperature TM, and is input to the upstream piping 62 . Therefore, the temperature of the processing liquid circulating in the circulation piping 61 is maintained at a specific temperature equal to or higher than the predetermined temperature TM.

而且，在循环配管61内维持为特定温度的处理液被供给至供给配管5。其结果，根据实施方式2，通过以累积热量成为规定值PV的方式控制处理液的喷出时间这一简单的控制，能够提高在多个基板W间，处理液的处理结果的均一性。Then, the processing liquid maintained at a specific temperature in the circulation piping 61 is supplied to the supply piping 5 . As a result, according to Embodiment 2, the uniformity of the processing result of the processing liquid among the plurality of substrates W can be improved by simple control of controlling the discharge time of the processing liquid so that the accumulated heat amount becomes the predetermined value PV.

继而，参照图11，对处理液的温度推移进行说明。图11是表示基板处理装置100A中的处理液的温度推移的图。如图11所示，横轴表示时间，纵轴表示处理液的温度。处理液的温度表示利用温度检测部9而检测出的处理液的温度。曲线B1表示处理液的温度，线B2表示阀7的状态。Next, the temperature transition of the processing liquid will be described with reference to FIG. 11 . FIG. 11 is a diagram showing the temperature transition of the processing liquid in the substrate processing apparatus 100A. As shown in FIG. 11 , the horizontal axis represents time, and the vertical axis represents the temperature of the treatment liquid. The temperature of the processing liquid indicates the temperature of the processing liquid detected by the temperature detection unit 9 . The curve B1 represents the temperature of the processing liquid, and the line B2 represents the state of the valve 7 .

在时刻t10，在喷嘴3处于待机位置的状态下，阀7自关闭状态成为打开状态。其结果，开始预分配处理。而且，在时刻t11，阀7自打开状态成为关闭状态。其结果，预分配处理结束。在时刻t11，喷嘴3自待机位置朝向处理位置移动。而且，在时刻t12，当喷嘴3到达处理位置时，阀7自关闭状态成为打开状态。其结果，向基板W喷出处理液。进而，在时刻t13，阀7自关闭状态成为打开状态。其结果，一片基板W的处理结束。At time t10, in a state where the nozzle 3 is at the standby position, the valve 7 is changed from the closed state to the open state. As a result, preallocation processing is started. Then, at time t11, the valve 7 is changed from the open state to the closed state. As a result, the pre-allocation process ends. At time t11, the nozzle 3 moves from the standby position to the processing position. Then, at time t12, when the nozzle 3 reaches the processing position, the valve 7 is changed from the closed state to the open state. As a result, the processing liquid is ejected to the substrate W. Furthermore, at time t13, the valve 7 changes from the closed state to the open state. As a result, the processing of one substrate W ends.

在实施方式2中，通过进行预分配处理，在朝基板W喷出处理液前，处理液的温度成为规定温度TM以上。而且，进行预分配处理后，在时刻t12以后的期间中，控制部11基于处理液的温度来控制阀7，并以基于处理液的累积热量成为规定值PV的方式控制处理液的喷出时间。In Embodiment 2, the temperature of the processing liquid becomes equal to or higher than the predetermined temperature TM before the processing liquid is ejected toward the substrate W by performing the pre-dispensing process. Then, after the pre-distribution process is performed, the control unit 11 controls the valve 7 based on the temperature of the processing liquid and controls the discharge time of the processing liquid so that the accumulated heat of the processing liquid becomes a predetermined value PV during the period after the time t12 .

以上，一面参照附图一面对本发明的实施方式(包含变形例)进行了说明。但是，本发明并不限定于所述实施方式，可在不脱离其主旨的范围内在各种形态中实施(例如，如下所示的(1)～(3))。另外，通过将所述实施方式中公开的多个构成要素适宜组合而可形成各种发明。例如，可自实施方式中所示的全部构成要素中删除几个构成要素。进而，也可将涉及不同的三个实施方式的构成要素适宜组合。为了容易理解，附图以各个构成要素为主体而示意性地表示，为了方便制作附图，经图示的各构成要素的厚度、长度、个数、间隔等也存在与实际不同的情况。另外，所述实施方式中所示的各构成要素的材质、形状、尺寸等为一例，并无特别限定，可在不实质性地脱离本发明的效果的范围内进行各种变更。Hereinabove, the embodiments (including the modifications) of the present invention have been described with reference to the accompanying drawings. However, this invention is not limited to the said embodiment, It can implement in various forms (for example, following (1)-(3)) in the range which does not deviate from the summary. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above-described embodiments. For example, some constituent elements may be deleted from all the constituent elements shown in the embodiments. Furthermore, the constituent elements related to the three different embodiments may be appropriately combined. For ease of understanding, the drawings schematically show each component as the main body. For the convenience of drawing, the thickness, length, number, interval, etc. of each component shown in the drawings may be different from actual ones. In addition, the material, shape, dimension, etc. of each component shown in the said embodiment is an example, It does not specifically limit, Various changes are possible in the range which does not deviate substantially from the effect of this invention.

(1)在参照图4及图6所说明的实施方式1(以下，包含变形例)及实施方式2中，控制部11参照喷出结束时间表TB。其中，只要以累积热量成为规定值PV的方式控制喷出时间，则控制部11可参照温度剖面图PF来决定喷出结束时间信息ST。所述情况下，存储部13存储多个温度剖面图PF。(1) In Embodiment 1 (hereinafter, including modified examples) and Embodiment 2 described with reference to FIGS. 4 and 6 , the control unit 11 refers to the discharge end timetable TB. However, as long as the discharge time is controlled so that the accumulated heat amount becomes the predetermined value PV, the control unit 11 can determine the discharge end time information ST with reference to the temperature profile PF. In this case, the storage unit 13 stores a plurality of temperature profiles PF.

例如，如图3所示，控制部11将在规定检测时刻x1处检测出的处理液的温度(以下，存在记载为“温度Td”情况)与在温度剖面图PF1～温度剖面图PF3的各者的规定检测时刻x1处的温度T1～温度T3进行比较。而且，控制部11自温度T1～温度T3中选择最接近温度Td的温度(例如，温度T1)。进而，控制部11选择具有经选择的温度的温度剖面图PF(例如，温度剖面图PF1)。而且，控制部11将经选择的温度剖面图PF的自始点时刻(例如，t0)至终点时刻(例如，te1)的时间决定为喷出结束时间(即，喷出结束时间信息ST)。For example, as shown in FIG. 3 , the control unit 11 compares the temperature of the processing liquid detected at a predetermined detection time x1 (hereinafter referred to as “temperature Td”) with each of the temperature profiles PF1 to PF3 The temperature T1 to the temperature T3 at the predetermined detection time x1 are compared. And the control part 11 selects the temperature (for example, temperature T1) closest to the temperature Td from the temperature T1 - the temperature T3. Furthermore, the control part 11 selects the temperature profile PF (for example, the temperature profile PF1) which has the selected temperature. Then, the control unit 11 determines the time from the start point time (for example, t0) to the end point time (for example, te1) of the selected temperature profile PF as the discharge end time (ie, the discharge end time information ST).

(2)在参照图1～图11所说明的实施方式1及实施方式2中，喷出结束时间信息ST所示的喷出结束时间表示温度剖面图PF的自始点时刻至终点时刻的时间，但只要能够确定处理液的喷出结束时刻，则可将喷出结束时间任意地进行定义。例如，喷出结束时间既可为自规定检测时刻至温度剖面图PF的终点时刻的时间，也可为温度剖面图PF的终点时刻。(2) In Embodiment 1 and Embodiment 2 described with reference to FIGS. 1 to 11 , the discharge end time indicated by the discharge end time information ST indicates the time from the start point time to the end point time of the temperature profile PF, However, as long as the discharge end time of the treatment liquid can be specified, the discharge end time can be arbitrarily defined. For example, the discharge end time may be the time from the predetermined detection time to the end time of the temperature profile PF, or may be the end time of the temperature profile PF.

(3)在参照图1及图9所说明的实施方式1及实施方式2中，阀7配置于腔室1的外部，但只要能够实现处理液对喷嘴3的供给开始及供给停止，则阀7也可配置于腔室1的内部。另外，也可将加热器配置于供给配管5。这是为了对供给配管5内的处理液进行加热。加热器既可配置于腔室1的内部，也可配置于腔室1的外部。(3) In Embodiments 1 and 2 described with reference to FIGS. 1 and 9 , the valve 7 is disposed outside the chamber 1 , but as long as the supply of the processing liquid to the nozzle 3 can be started and stopped, the valve 7 7 may also be arranged inside the chamber 1 . Moreover, a heater may be arrange|positioned in the supply piping 5. This is for heating the processing liquid in the supply piping 5 . The heater may be arranged inside the chamber 1 or may be arranged outside the chamber 1 .

产业上的可利用性Industrial Availability

本发明涉及一种对基板进行处理的基板处理装置及基板处理方法，且具有产业上的可利用性。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate, and has industrial applicability.

符号的说明Explanation of symbols

1：腔室1: Chamber

3：喷嘴3: Nozzle

5：供给配管5: Supply piping

7：阀7: Valve

9：温度检测部9: Temperature detection part

11：控制部11: Control Department

100、100A：基板处理装置100, 100A: Substrate processing device

W：基板W: substrate

Claims (14)

1.一种基板处理装置，对基板进行处理，包括：1. A substrate processing device for processing a substrate, comprising: 腔室，收容所述基板；a chamber for containing the substrate; 喷嘴，配置于所述腔室内，向所述基板喷出处理液；a nozzle, disposed in the chamber, to spray the processing liquid to the substrate; 供给配管，对所述喷嘴供给所述处理液；a supply pipe for supplying the treatment liquid to the nozzle; 阀，能够切换成打开状态与关闭状态，所述打开状态使在所述供给配管内流动的所述处理液朝向所述喷嘴通过，所述关闭状态使自所述供给配管朝所述喷嘴的所述处理液的供给停止；The valve can be switched between an open state that allows the processing liquid flowing in the supply pipe to pass toward the nozzle, and a closed state that allows all the flow from the supply pipe to the nozzle to pass through. The supply of the treatment liquid is stopped; 温度检测部，检测所述腔室内的所述处理液的温度；以及a temperature detection unit that detects the temperature of the processing liquid in the chamber; and 控制部，基于所述处理液的温度来控制所述阀，并以基于所述处理液的累积热量成为规定值的方式控制所述处理液的喷出时间，且a control unit that controls the valve based on the temperature of the processing liquid, and controls the discharge time of the processing liquid so that the accumulated heat of the processing liquid becomes a predetermined value, and 所述累积热量表示代表投入至所述基板的所述处理液的热量的累积值的物理量。The accumulated heat amount represents a physical quantity representing an accumulated value of the heat amount of the processing liquid supplied to the substrate. 2.根据权利要求1所述的基板处理装置，其中所述控制部以使所述阀自所述打开状态成为所述关闭状态的方式，基于喷出结束时间信息来控制所述阀，且2 . The substrate processing apparatus according to claim 1 , wherein the control section controls the valve based on ejection end time information so that the valve is changed from the open state to the closed state, and 2 . 所述喷出结束时间信息基于温度剖面图而预先规定，表示所述处理液的喷出结束时间，The discharge end time information is predetermined based on a temperature profile, and indicates the discharge end time of the treatment liquid, 所述温度剖面图表示当对与所述基板相同的基板喷出与所述处理液相同的处理液时，所述相同的处理液的温度的时间推移，The temperature cross-sectional view shows the temporal transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is ejected to the same substrate as the substrate, 所述喷出结束时间信息所示的所述喷出结束时间表示所述相同的处理液的温度的时间积分值变得与所述规定值相等的时间。The discharge end time indicated by the discharge end time information indicates the time at which the time integral value of the temperature of the same processing liquid becomes equal to the predetermined value. 3.根据权利要求2所述的基板处理装置，其中所述控制部在将所述处理液向所述基板喷出的期间中执行选择处理，3 . The substrate processing apparatus according to claim 2 , wherein the control section executes selection processing during a period in which the processing liquid is ejected to the substrate, 3 . 所述选择处理表示自多个所述喷出结束时间信息中选择与所述处理液的温度对应的喷出结束时间信息的处理，The selection process represents a process of selecting the discharge end time information corresponding to the temperature of the processing liquid from the plurality of the discharge end time information, 所述控制部基于所述经选择的喷出结束时间信息来控制所述阀，使所述阀自所述打开状态成为所述关闭状态，The control unit controls the valve based on the selected discharge end time information so that the valve is changed from the open state to the closed state, 所述多个喷出结束时间信息分别基于互不相同的多个所述温度剖面图而预先规定。The plurality of discharge end time information is predetermined based on the plurality of mutually different temperature profiles, respectively. 4.根据权利要求3所述的基板处理装置，其中所述控制部仅执行一次所述选择处理。4. The substrate processing apparatus according to claim 3, wherein the control section executes the selection process only once. 5.根据权利要求3所述的基板处理装置，其中所述温度检测部在喷出所述处理液的过程中的多个规定检测时刻检测所述处理液的温度，且5 . The substrate processing apparatus according to claim 3 , wherein the temperature detection section detects the temperature of the processing liquid at a plurality of predetermined detection timings in the process of discharging the processing liquid, and 所述控制部针对每个所述规定检测时刻，基于在所述规定检测时刻所检测出的所述处理液的温度来执行所述选择处理。The control unit executes the selection process based on the temperature of the processing liquid detected at the predetermined detection time for each predetermined detection time. 6.根据权利要求1至5中任一项所述的基板处理装置，其中所述处理液包含磷酸、或硫酸过氧化氢水混合液。6 . The substrate processing apparatus according to claim 1 , wherein the processing liquid contains phosphoric acid or a sulfuric acid-hydrogen peroxide mixed liquid. 7 . 7.根据权利要求1至6中任一项所述的基板处理装置，包括多个所述腔室，且7. The substrate processing apparatus of any one of claims 1 to 6, comprising a plurality of the chambers, and 每个所述腔室包括所述喷嘴、所述供给配管、所述阀、及所述温度检测部，Each of the chambers includes the nozzle, the supply pipe, the valve, and the temperature detection unit, 所述控制部针对每个所述腔室，以所述累积热量成为所述规定值的方式控制所述处理液的喷出时间。The control unit controls the discharge time of the processing liquid so that the accumulated heat amount becomes the predetermined value for each of the chambers. 8.一种基板处理方法，是对基板进行处理的基板处理方法，且所述基板处理方法包括：8. A substrate processing method, which is a substrate processing method for processing a substrate, the substrate processing method comprising: 喷出步骤，向收容于腔室的所述基板喷出处理液；The spraying step is to spray the processing liquid to the substrate accommodated in the chamber; 检测步骤，检测所述腔室内的所述处理液的温度；以及a detecting step of detecting the temperature of the treatment liquid in the chamber; and 控制步骤，基于所述处理液的温度，以基于所述处理液的累积热量成为规定值的方式控制所述处理液的喷出时间，a control step of controlling the discharge time of the treatment liquid so that the accumulated heat of the treatment liquid becomes a predetermined value based on the temperature of the treatment liquid, 所述累积热量表示代表投入至所述基板的所述处理液的热量的累积值的物理量。The accumulated heat amount represents a physical quantity representing an accumulated value of the heat amount of the processing liquid supplied to the substrate. 9.根据权利要求8所述的基板处理方法，其中所述控制步骤包括基于喷出结束时间信息来结束所述处理液的喷出的结束步骤，且9. The substrate processing method according to claim 8, wherein the controlling step includes an ending step of ending the discharge of the processing liquid based on discharge end time information, and 所述喷出结束时间信息基于温度剖面图而预先规定，表示所述处理液的喷出结束时间，The discharge end time information is predetermined based on a temperature profile, and indicates the discharge end time of the treatment liquid, 所述温度剖面图表示当对与所述基板相同的基板喷出与所述处理液相同的处理液时，所述相同的处理液的温度的时间推移，The temperature cross-sectional view shows the temporal transition of the temperature of the same processing liquid when the same processing liquid as the processing liquid is ejected to the same substrate as the substrate, 所述喷出结束时间信息所示的所述喷出结束时间表示所述相同的处理液的温度的时间积分值变得与所述规定值相等的时间。The discharge end time indicated by the discharge end time information indicates the time at which the time integral value of the temperature of the same processing liquid becomes equal to the predetermined value. 10.根据权利要求9所述的基板处理方法，其中所述控制步骤还包括：在将所述处理液向所述基板喷出的期间中执行选择处理的选择步骤，且10 . The substrate processing method according to claim 9 , wherein the control step further includes a selection step of performing a selection process during a period in which the processing liquid is ejected to the substrate, and 10 . 所述选择处理表示自多个所述喷出结束时间信息中选择与所述处理液的温度对应的喷出结束时间信息的处理，The selection process represents a process of selecting the discharge end time information corresponding to the temperature of the processing liquid from the plurality of the discharge end time information, 在所述结束步骤中，基于所述经选择的喷出结束时间信息来结束所述处理液的喷出，In the terminating step, the ejection of the treatment liquid is terminated based on the selected ejection end time information, 所述多个喷出结束时间信息分别基于互不相同的多个所述温度剖面图而预先规定。The plurality of discharge end time information is predetermined based on the plurality of mutually different temperature profiles, respectively. 11.根据权利要求10所述的基板处理方法，其中在所述选择步骤中，仅执行一次所述选择处理。11. The substrate processing method according to claim 10, wherein in the selecting step, the selecting process is performed only once. 12.根据权利要求10所述的基板处理方法，其中在所述检测步骤中，在喷出所述处理液的过程中的多个规定检测时刻检测所述处理液的温度，且12 . The substrate processing method according to claim 10 , wherein in the detecting step, the temperature of the processing liquid is detected at a plurality of predetermined detection timings in the process of discharging the processing liquid, and 12 . 在所述选择步骤中，针对每个所述规定检测时刻，基于在所述规定检测时刻所检测出的所述处理液的温度来执行所述选择处理。In the selection step, the selection process is executed based on the temperature of the processing liquid detected at the predetermined detection time for each of the predetermined detection times. 13.根据权利要求8至12中任一项所述的基板处理方法，其中所述处理液包含磷酸、或硫酸过氧化氢水混合液。13. The substrate processing method according to any one of claims 8 to 12, wherein the processing liquid contains phosphoric acid, or a sulfuric acid-hydrogen peroxide mixed liquid. 14.根据权利要求8至13中任一项所述的基板处理方法，其中在所述控制步骤中，针对分别收容多个所述基板的多个所述腔室，以所述累积热量成为所述规定值的方式控制所述处理液的喷出时间。14. The substrate processing method according to any one of claims 8 to 13, wherein in the control step, the accumulated heat is used as all the chambers for each of the plurality of the chambers that accommodate the plurality of the substrates. The discharge time of the treatment liquid is controlled in such a manner as to set the predetermined value.
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