WO2019004186A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number: WO2019004186A1
Authority: WO; WIPO (PCT)
Prior art keywords: electrode; terminal; plasma processing; processing apparatus; balun
Prior art date: 2017-06-27

Application number

PCT/JP2018/024148

Other languages

English (en)

French (fr)

Japanese (ja)

Inventor

正治田名部

一成関谷

忠井上

浩笹本

辰憲佐藤

信昭土屋

竹田　敦

Original Assignee

キヤノンアネルバ株式会社

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-06-27

Filing date

2018-06-26

Publication date

2019-01-03

2017-06-27 Priority claimed from PCT/JP2017/023603 external-priority patent/WO2019003309A1/ja

2017-06-27 Priority claimed from PCT/JP2017/023611 external-priority patent/WO2019003312A1/ja

2018-06-26 Application filed by キヤノンアネルバ株式会社 filed Critical キヤノンアネルバ株式会社

2018-06-26 Priority to JP2019526925A priority Critical patent/JP6656480B2/ja

2018-12-21 Priority to SG11202009122YA priority patent/SG11202009122YA/en

2018-12-21 Priority to EP24187058.3A priority patent/EP4425529A3/en

2018-12-21 Priority to JP2019563646A priority patent/JP6688440B1/ja

2018-12-21 Priority to CN201880094963.9A priority patent/CN112292911A/zh

2018-12-21 Priority to EP24187057.5A priority patent/EP4421844A3/en

2018-12-21 Priority to KR1020207036923A priority patent/KR102439024B1/ko

2018-12-21 Priority to EP18924031.0A priority patent/EP3817517B1/en

2018-12-21 Priority to PL18924031.0T priority patent/PL3817517T3/pl

2018-12-21 Priority to FIEP18924031.0T priority patent/FI3817517T3/fi

2018-12-21 Priority to PCT/JP2018/047319 priority patent/WO2020003557A1/ja

2018-12-25 Priority to TW107146926A priority patent/TWI716796B/zh

2019-01-03 Publication of WO2019004186A1 publication Critical patent/WO2019004186A1/ja

2020-09-17 Priority to US17/023,675 priority patent/US11600466B2/en

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Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering

Definitions

the present invention relates to a plasma processing apparatus.
a plasma processing apparatus which generates a plasma by applying a high frequency between two electrodes and processes a substrate by the plasma.
Such a plasma processing apparatus can operate as a sputtering apparatus or as an etching apparatus depending on the area ratio and / or bias of the two electrodes.
a plasma processing apparatus configured as a sputtering apparatus has a first electrode holding a target and a second electrode holding a substrate, and a high frequency is applied between the first electrode and the second electrode, A plasma is generated between the electrode and the second electrode (between the target and the substrate).
the generation of plasma generates a self-bias voltage on the surface of the target, which causes the ions to collide with the target, and the target releases particles of the material constituting it.
Patent Document 1 describes a sputtering apparatus having a grounded chamber, a target electrode connected to an RF source via an impedance matching network, and a substrate holding electrode grounded via a substrate electrode tuning circuit. It is done.
a chamber can function as an anode in addition to a substrate holding electrode.
the self bias voltage may depend on the state of the part that can function as a cathode and the state of the part that can function as an anode.
the cell bias voltage may change depending on the state of the portion of the chamber functioning as the anode. Changes in the self-bias voltage result in changes in the plasma potential, which can affect the properties of the film formed.
the film When a film is formed on the substrate by a sputtering apparatus, the film may be formed on the inner surface of the chamber. This can change the state of the portion of the chamber that can function as the anode. Therefore, when the sputtering apparatus is used continuously, the film formed on the inner surface of the chamber changes the self bias voltage, and the plasma potential may also change. Therefore, conventionally, when the sputtering apparatus is used for a long time, it has been difficult to maintain the characteristics of the film formed on the substrate constant.
the film formed on the inner surface of the chamber changes the self bias voltage, which may also change the plasma potential, thereby maintaining the etching characteristics of the substrate constant. It was difficult.
a first aspect of the present invention relates to a plasma processing apparatus, which comprises a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, and a ground.
a vacuum vessel a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a first voltage applied to the first electrode; And an adjusting reactance that affects a relationship with a second voltage applied to the second electrode.
a second aspect of the present invention relates to a plasma processing method, the plasma processing method comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; A vacuum vessel, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a first voltage applied to the first electrode; A plasma processing method for processing a substrate in a plasma processing apparatus, comprising: an adjusting reactance that affects a relationship with a second voltage applied to the second electrode, wherein the reactance is adjusted so that the relationship is adjusted.
substrate after the said process are included.
FIG. 1 The figure which shows typically the structure of the plasma processing apparatus 1 of 1st Embodiment of this invention.
the figure which shows typically the structure of the plasma processing apparatus 1 of 16th Embodiment of this invention The figure which shows typically the structure of the plasma processing apparatus 1 of 17th Embodiment of this invention.
FIG. 1 schematically shows the configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention.
the plasma processing apparatus of the first embodiment can operate as a sputtering apparatus for forming a film on a substrate 112 by sputtering.
the plasma processing apparatus 1 includes a balun (balance-unbalance conversion circuit) 103, a vacuum vessel 110, a first electrode 106, and a second electrode 111.
the plasma processing apparatus 1 may be understood as comprising a balun 103 and a main body 10, wherein the main body 10 comprises a vacuum vessel 110, a first electrode 106 and a second electrode 111.
the main body 10 has a first terminal 251 and a second terminal 252.
the first electrode 106 may be disposed to cooperate with the vacuum vessel 110 to separate the vacuum space from the external space (ie, to form a part of the vacuum dividing wall). It may be placed inside.
the second electrode 111 may be arranged to cooperate with the vacuum vessel 110 to separate the vacuum space from the external space (ie, to constitute a part of the vacuum barrier), It may be placed inside.
the balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212.
An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the side of the first balanced terminal 211 and the second balanced terminal 212 of the balun 103.
the vacuum vessel 110 is composed of a conductor and is grounded.
the first electrode 106 is a cathode and holds the target 109.
the target 109 can be, for example, an insulator material or a conductor material.
the second electrode 111 is an anode and holds the substrate 112.
the plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus for forming a film on the substrate 112 by sputtering of the target 109.
the first electrode 106 is electrically connected to the first balanced terminal 211
the second electrode 111 is electrically connected to the second balanced terminal 212.
the fact that the first electrode 106 and the first balanced terminal 211 are electrically connected means that the current flows between the first electrode 106 and the first balanced terminal 211. It means that a current path is formed between the two.
that a and b are electrically connected means that a current path is configured between a and b so that current flows between a and b. means.
the first electrode 106 is electrically connected to the first terminal 251
the second electrode 111 is electrically connected to the second terminal 252
the first terminal 251 is electrically connected to the first balanced terminal 211. It can also be understood as a configuration in which the second terminal 252 is electrically connected to the second balanced terminal 212.
the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104.
the blocking capacitor 104 blocks direct current between the first balanced terminal 211 and the first electrode 106 (or alternatively, between the first balanced terminal 211 and the second balanced terminal 212).
an impedance matching circuit 102 described later may be configured to interrupt direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202.
the first electrode 106 can be supported by the vacuum vessel 110 via the insulator 107.
the second electrode 111 can be supported by the vacuum vessel 110 via the insulator 108.
the insulator 108 may be disposed between the second electrode 111 and the vacuum vessel 110.
the plasma processing apparatus 1 can further include a high frequency power supply 101 and an impedance matching circuit 102 disposed between the high frequency power supply 101 and the balun 103.
the high frequency power supply 101 supplies a high frequency (high frequency current, high frequency voltage, high frequency power) between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103 via the impedance matching circuit 102.
the high frequency power supply 101 supplies a high frequency (high frequency current, high frequency voltage, high frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104.
the high frequency power supply 101 may be understood as supplying high frequency between the first terminal 251 and the second terminal 252 of the main body 10 through the impedance matching circuit 102 and the balun 103.
a gas for example, Ar, Kr or Xe gas
a gas supply unit (not shown) provided in the vacuum vessel 110.
a high frequency power is supplied between the first electrode 106 and the second electrode 111 by the high frequency power supply 101 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104.
a plasma is generated between the first electrode 106 and the second electrode 111, a self bias voltage is generated on the surface of the target 109, ions in the plasma collide with the surface of the target 109, and the target 109 is removed.
the particles of the material making up the are released.
a film is formed on the substrate 112 by the particles.
FIG. 2A An example configuration of the balun 103 is shown in FIG. 2A.
the balun 103 shown in FIG. 2A is configured to connect a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211, and a second connecting the second unbalanced terminal 202 and the second balanced terminal 212. And a coil 222.
the first coil 221 and the second coil 222 are coils having the same number of turns, and share the iron core.
FIG. 2B Another configuration example of the balun 103 is shown in FIG. 2B.
the balun 103 shown in FIG. 2B is configured to connect a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211, and a second connecting the second unbalanced terminal 202 and the second balanced terminal 212. And a coil 222.
the first coil 221 and the second coil 222 are coils having the same number of turns, and share the iron core.
the 2B further includes a third coil 223 and a fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212, and the third coil 223 and the The four coils 224 are configured such that the voltage at the connection node 213 between the third coil 223 and the fourth coil 224 is a midpoint between the voltage at the first balanced terminal 211 and the voltage at the second balanced terminal 212.
the third coil 223 and the fourth coil 224 are coils with the same number of turns, and share the iron core.
the connection node 213 may be grounded, may be connected to the vacuum vessel 110, or may be floated.
a current flowing through the first unbalanced terminal 201 is I1
a current flowing through the first balanced terminal 211 is I2
a current flowing through the second unbalanced terminal 202 is I2 '
a current flowing to the ground among the current I2 is I3.
Rp-jXp indicates the side of the first electrode 106 and the second electrode 111 from the side of the first balance terminal 211 and the second balance terminal 212 in a state where plasma is generated in the internal space of the vacuum vessel 110
the impedance (including the reactance of the blocking capacitor 104) when looking at the side of the main body 10 is shown.
Rp indicates a resistance component
-Xp indicates a reactance component.
X indicates a reactance component (inductance component) of the impedance of the first coil 221 of the balun 103.
ISO has a correlation to X / Rp.
the inventor of the present invention has a configuration in which a high frequency is supplied between the first electrode 106 and the second electrode 111 from the high frequency power source 101 through the balun 103, and in particular, 1.5 ⁇ X / Rp ⁇ 5000 in the configuration.
a potential plasma potential
the insensitivity of the plasma potential to the state of the inner surface of the vacuum vessel 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long time.
1.5 ⁇ X / Rp ⁇ 5000 corresponds to ⁇ 10.0 dB ⁇ ISO ⁇ -80 dB.
FIG. 5A to 5D show simulation results of the plasma potential and the potential (cathode potential) of the first electrode 106 in the case of satisfying 1.5 ⁇ X / Rp ⁇ 5000.
FIG. 5A shows the plasma potential and the cathode potential in the state in which no film is formed on the inner surface of the vacuum vessel 110.
FIG. 5B shows the plasma potential and the cathode potential in the state in which a resistive film (1000 ⁇ ) is formed on the inner surface of the vacuum vessel 110.
FIG. 5C shows the plasma potential and the cathode potential in the state where an inductive film (0.6 ⁇ H) is formed on the inner surface of the vacuum vessel 110.
FIG. 5A shows the plasma potential and the cathode potential in the state in which no film is formed on the inner surface of the vacuum vessel 110.
FIG. 5B shows the plasma potential and the cathode potential in the state in which a resistive film (1000 ⁇ ) is formed on the inner surface of the vacuum vessel 110.
FIGS. 5A-5D shows the plasma potential and the cathode potential in the state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110. It is understood from FIGS. 5A-5D that satisfying 1.5 ⁇ X / Rp ⁇ 5000 is advantageous for the inner surface of the vacuum vessel 110 to stabilize the plasma potential in various states.
FIG. 6A to 6D show simulation results of the plasma potential and the potential (cathode potential) of the first electrode 106 in the case where 1.5 ⁇ X / Rp ⁇ 5000 is not satisfied.
FIG. 6A shows the plasma potential and the cathode potential in the state in which no film is formed on the inner surface of the vacuum vessel 110.
FIG. 6B shows the plasma potential and the cathode potential in a state in which a resistive film (1000 ⁇ ) is formed on the inner surface of the vacuum vessel 110.
FIG. 6C shows the plasma potential and the cathode potential in the state where the inductive film (0.6 ⁇ H) is formed on the inner surface of the vacuum vessel 110.
FIGS. 6A to 6D shows the plasma potential and the cathode potential in the state where the capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110. It is understood from FIGS. 6A to 6D that the plasma potential may change depending on the state of the inner surface of the vacuum vessel 110 if 1.5 ⁇ X / Rp ⁇ 5000 is not satisfied.
the plasma potential is likely to change depending on the state of the inner surface of the vacuum vessel 110.
X / Rp> 5000 in a state where a film is not formed on the inner surface of the vacuum vessel 110, discharge occurs only between the first electrode 106 and the second electrode 111.
X / Rp> 5000 when a film starts to be formed on the inner surface of the vacuum vessel 110, the plasma potential reacts sensitively to the result as illustrated in FIGS. 6A to 6D.
the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the main body 10. Further, the second terminal 252 (second electrode 111) of the main body 10 is grounded. In this state, a high frequency is supplied from the high frequency power source 101 to the first terminal 251 of the main body 10 through the impedance matching circuit 102.
the impedance matching circuit 102 is equivalently composed of coils L1 and L2 and variable capacitors VC1 and VC2.
a plasma can be generated by adjusting the capacitance value of the variable capacitors VC1 and VC2.
the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp on the side of the main body 10 (side of the first electrode 106 and the second electrode 111) when the plasma is generated. .
the impedance of the impedance matching circuit 102 at this time is Rp + jXp.
Rp-jXp (only Rp what you really want to know).
Rp-jXp can also be obtained by simulation based on, for example, design data.
X / Rp can be identified.
the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5 ⁇ X / Rp ⁇ 5000.
the structure of the plasma processing apparatus 1 of the second embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the second embodiment can operate as an etching apparatus for etching the substrate 112.
the first electrode 106 is a cathode and holds the substrate 112.
the second electrode 111 is an anode.
the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104.
the blocking capacitor 104 is disposed in the electrical connection path between the first electrode 106 and the first balanced terminal 211.
FIG. 9 schematically shows the configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention.
the plasma processing apparatus 1 of the third embodiment is a modification of the plasma processing apparatus 1 of the first embodiment, and further includes at least one of a mechanism for moving the second electrode 111 up and down and a mechanism for rotating the second electrode 111.
the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for moving the second electrode 111 up and down and a mechanism for rotating the second electrode 111. Between the vacuum vessel 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition can be provided.
the plasma processing apparatus 1 of the second embodiment can further include at least one of a mechanism for moving the first electrode 106 up and down and a mechanism for rotating the second electrode 106.
the structure of the plasma processing apparatus 1 of 4th Embodiment of this invention is shown typically by FIG.
the plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus for forming a film on a substrate 112 by sputtering. Matters not mentioned as the plasma processing apparatus 1 of the fourth embodiment can follow the first to third embodiments.
the plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum vessel 110, a first electrode 106 and a second electrode 135 constituting a first set, and a first electrode 141 constituting a second set. And a second electrode 145.
the plasma processing apparatus 1 includes the first balun 103, the second balun 303, and the main body 10, and the main body 10 includes the vacuum vessel 110 and the first electrode 106 and the second electrode 135 that form the first pair. And the first electrode 141 and the second electrode 145 that constitute the second set.
the main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.
the first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211 and a second balanced terminal 212.
An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103.
Balance circuit is connected.
the second balun 303 may have the same configuration as the first balun 103.
the second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411 and a second balanced terminal 412.
An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. , Balance circuit is connected.
the vacuum vessel 110 is grounded.
the first set of first electrodes 106 hold the target 109.
the target 109 can be, for example, an insulator material or a conductor material.
the first set of second electrodes 135 is disposed around the first electrode 106.
the first set of first electrodes 106 is electrically connected to the first balanced terminal 211 of the first balun 103, and the first set of second electrodes 135 is electrically connected to the second balanced terminal 212 of the first balun 103. It is connected to the.
the second set of first electrodes 141 holds the substrate 112.
the second set of second electrodes 145 is disposed around the first electrode 141.
the second set of first electrodes 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second set of second electrodes 145 is electrically connected to the second balanced terminal 412 of the second balun 303. It is connected to the.
the first pair of first electrodes 106 is electrically connected to the first terminal 251
the first pair of second electrodes 135 is electrically connected to the second terminal 252
the first terminal 251 is It can be understood as a configuration that is electrically connected to the first balanced terminal 211 of the first balun 103 and that the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103.
the second set of first electrodes 141 is electrically connected to the third terminal 451, and the second set of second electrodes 145 is electrically connected to the fourth terminal 452, and the third terminal It can be understood that 451 is electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.
the first pair of first electrodes 106 and the first balanced terminal 211 (first terminal 251) of the first balun 103 may be electrically connected via the blocking capacitor 104.
the blocking capacitor 104 is disposed between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first set (or between the first balanced terminal 211 of the first balun 103 and the second balanced terminal 212). Cut off the DC current.
the first impedance matching circuit 102 may be configured to interrupt a direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. Good.
the first set of first and second electrodes 106 and 135 may be supported by the vacuum vessel 110 via the insulator 132.
the second pair of first electrodes 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304.
the blocking capacitor 304 is between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second set (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current.
the second impedance matching circuit 302 may be configured to interrupt direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Good.
the second set of first and second electrodes 141 and 145 may be supported by the vacuum vessel 110 via the insulator 142.
the plasma processing apparatus 1 can include a first high frequency power supply 101, and a first impedance matching circuit 102 disposed between the first high frequency power supply 101 and the first balun 103.
the first high frequency power supply 101 supplies a high frequency between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103 via the first impedance matching circuit 102.
the first high frequency power supply 101 supplies a high frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103 and the blocking capacitor 104.
the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103.
the first balun 103 and the first pair of first electrodes 106 and the second electrode 135 constitute a first high frequency supply unit for supplying a high frequency to the internal space of the vacuum vessel 110.
the plasma processing apparatus 1 can include a second high frequency power supply 301, and a second impedance matching circuit 302 disposed between the second high frequency power supply 301 and the second balun 303.
the second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302.
the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 of the second set via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304. .
the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.
the second balun 303 and the first electrode 141 and the second electrode 145 of the second set constitute a second high frequency supply unit for supplying a high frequency to the internal space of the vacuum vessel 110.
the first set of first from the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The impedance when looking at the side of the one electrode 106 and the second electrode 135 (the side of the main body 10) is Rp1-jXp1. Further, a reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is assumed to be X1. In this definition, satisfying 1.5 ⁇ X1 / Rp1 ⁇ 5000 is advantageous for stabilizing the potential of plasma formed in the inner space of the vacuum vessel 110.
the impedance when looking at the side of the first electrode 141 and the second electrode 145 (the side of the main body 10) is Rp2-jXp2.
a reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is assumed to be X2. In this definition, satisfying 1.5 ⁇ X2 / Rp2 ⁇ 5000 is advantageous for stabilizing the potential of plasma formed in the inner space of the vacuum vessel 110.
the structure of the plasma processing apparatus 1 of 5th Embodiment of this invention is shown typically by FIG.
the apparatus 1 of the fifth embodiment has a configuration in which driving mechanisms 114 and 314 are added to the plasma processing apparatus 1 of the fourth embodiment.
the driving mechanism 114 may include at least one of a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141.
the drive mechanism 314 may include a mechanism for raising and lowering the second electrode 145.
the structure of the plasma processing apparatus 1 of 6th Embodiment of this invention is shown typically by FIG.
the plasma processing apparatus of the sixth embodiment can operate as a sputtering apparatus for forming a film on a substrate 112 by sputtering. Matters not mentioned in the sixth embodiment can follow the first to fifth embodiments.
the plasma processing apparatus 1 of the sixth embodiment includes a plurality of first high frequency supply units and at least one second high frequency supply unit.
One of the plurality of first high frequency power supply units may include a first electrode 106a, a second electrode 135a, and a first balun 103a.
Another one of the plurality of first high frequency power supply units may include a first electrode 106 b, a second electrode 135 b, and a first balun 103 b.
a first electrode 106 b may include a first electrode 106 b, a second electrode 135 b, and a first balun 103 b.
the plurality of first high frequency supply units are configured by two high frequency supply units will be described.
the two high frequency feeds and their associated components are distinguished from one another by the indices a, b.
two targets are also distinguished from each other by the subscripts a and b.
the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, a vacuum vessel 110, a first electrode 106a and a second electrode 135a, a first electrode 106b and a second electrode.
An electrode 135 b and a first electrode 141 and a second electrode 145 are provided.
the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, and a main body 10.
the main body 10 includes a vacuum vessel 110, a first electrode 106a, and a second electrode 135a.
the main body 10 includes first terminals 251a and 251b, second terminals 252a and 252b, a third terminal 451, and a fourth terminal 452.
the first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a.
An unbalanced circuit is connected to the side of the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and is connected to the side of the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a.
Balance circuit is connected.
the first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b.
An unbalanced circuit is connected to the side of the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and the side of the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b. , Balance circuit is connected.
the second balun 303 may have the same configuration as the first baluns 103a and 103b.
the second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411 and a second balanced terminal 412.
An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303.
Balance circuit is connected.
the vacuum vessel 110 is grounded.
the first electrodes 106a and 106b respectively hold the targets 109a and 109b.
the targets 109a, 109b can be, for example, an insulator material or a conductor material.
the second electrodes 135a and 135b are disposed around the first electrodes 106a and 106b, respectively.
the first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first baluns 103a and 103b, respectively, and the second electrodes 135a and 135b are the second balanced terminals of the first baluns 103a and 103b, respectively. It is electrically connected to 212a and 212b.
the first electrode 141 holds the substrate 112.
the second electrode 145 is disposed around the first electrode 141.
the first electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303.
the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, and the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, respectively.
the terminals 251a and 251b are electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, respectively, and the second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively. It can be understood as a connected configuration.
the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is the second balun 303. It can be understood that the first balanced terminal 411 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.
the first electrodes 106a and 106b may be electrically connected to the first balanced terminals 211a and 211b (first terminals 251a and 251b) of the first baluns 103a and 103b through the blocking capacitors 104a and 104b, respectively.
the blocking capacitors 104a and 104b are connected between the first balanced terminals 211a and 211b of the first baluns 103a and 103b and the first electrodes 106a and 106b (or alternatively, the first balanced terminals 211a and 211b and the first baluns 103a and 103b 2) interrupting the direct current between the balanced terminals 212a and 212b).
the first impedance matching circuits 102a and 102b are direct current flowing between the first unbalanced terminals 201a and 201b of the first baluns 103a and 103b and the second unbalanced terminals 202a and 202b. It may be configured to interrupt the current.
the blocking capacitors 104a and 104b may be disposed between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (second terminals 252a and 252b) of the first baluns 103a and 103b.
the first electrodes 106a and 106b and the second electrodes 135a and 135b may be supported by the vacuum vessel 110 via the insulators 132a and 132b, respectively.
the first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304.
the blocking capacitor 304 directs a DC current between the first balanced terminal 411 of the second balun 303 and the first electrode 141 (or alternatively, between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off.
the second impedance matching circuit 302 may be configured to interrupt direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Good.
the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (fourth terminal 452) of the second balun 303.
the first electrode 141 and the second electrode 145 may be supported by the vacuum vessel 110 via the insulator 142.
the plasma processing apparatus 1 includes a first impedance matching circuit 102a disposed between the plurality of first high frequency power supplies 101a and 101b, the plurality of first high frequency power supplies 101a and 101b, and the plurality of first baluns 103a and 103b, respectively. And 102b.
the first high frequency power supplies 101a and 101b are high frequency components between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b through the first impedance matching circuits 102a and 102b, respectively. Supply.
the first high frequency power supplies 101a and 101b are connected to the first electrodes 106a and 106b and the second electrode 135a via the first impedance matching circuits 102a and 102b, the first baluns 103a and 103b, and the blocking capacitors 104a and 104b, respectively.
a high frequency is supplied between 135b and 135b.
the first high frequency power supplies 101a and 101b may be provided between the first terminals 251a and 251b and the second terminals 252a and 252b of the main body 10 via the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. Supply high frequency.
the plasma processing apparatus 1 can include a second high frequency power supply 301, and a second impedance matching circuit 302 disposed between the second high frequency power supply 301 and the second balun 303.
the second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302.
the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304.
the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.
the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus for forming a film on a substrate 112 by sputtering. Matters not mentioned as the plasma processing apparatus 1 of the seventh embodiment can follow the first to sixth embodiments.
the plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum vessel 110, a first electrode 105a and a second electrode 105b constituting a first set, and a first electrode 141 constituting a second set. And a second electrode 145.
the plasma processing apparatus 1 includes the first balun 103, the second balun 303, and the main body 10, and the main body 10 includes the vacuum vessel 110 and the first electrode 105a and the second electrode 105b constituting the first set. And the first electrode 141 and the second electrode 145 that constitute the second set.
the main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.
the first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211 and a second balanced terminal 212.
An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103.
Balance circuit is connected.
the second balun 303 may have the same configuration as the first balun 103.
the second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411 and a second balanced terminal 412.
An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. , Balance circuit is connected.
the vacuum vessel 110 is grounded.
the first set of first electrodes 105a holds the first target 109a, and faces the space on the side of the substrate 112 via the first target 109a.
the first pair of second electrodes 105b is disposed adjacent to the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 via the second target 109b.
the targets 109a and 109b can be, for example, an insulator material or a conductor material.
the first set of first electrodes 105 a is electrically connected to the first balanced terminal 211 of the first balun 103
the first set of second electrodes 105 b is electrically connected to the second balanced terminal 212 of the first balun 103. It is connected to the.
the second set of first electrodes 141 holds the substrate 112.
the second set of second electrodes 145 is disposed around the first electrode 141.
the second set of first electrodes 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second set of second electrodes 145 is electrically connected to the second balanced terminal 412 of the second balun 303. It is connected to the.
the first set of first electrodes 105 a is electrically connected to the first terminal 251
the first set of second electrodes 105 b is electrically connected to the second terminal 252
the first terminals 251 are electrically connected. It can be understood as a configuration in which the first balanced terminal 211 of the first balun 103 is electrically connected and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103.
the second set of first electrodes 141 is electrically connected to the third terminal 451, and the second set of second electrodes 145 is electrically connected to the fourth terminal 452, and the third terminal It can be understood that 451 is electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303.
the first pair of first electrodes 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 may be electrically connected via the blocking capacitor 104a.
the blocking capacitor 104 a is between the first balanced terminal 211 of the first balun 103 and the first electrode 105 a of the first set (or between the first balanced terminal 211 of the first balun 103 and the second balanced terminal 212). Cut off the DC current.
the first pair of second electrodes 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 may be electrically connected via the blocking capacitor 104b.
the blocking capacitor 104 b is disposed between the second balanced terminal 212 of the first balun 103 and the second electrode 105 b of the first set (or between the first balanced terminal 211 of the first balun 103 and the second balanced terminal 212). Cut off the DC current.
the first set of first electrode 105a and the second electrode 105b may be supported by the vacuum vessel 110 through the insulators 132a and 132b, respectively.
the second pair of first electrodes 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304.
the blocking capacitor 304 is between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second set (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current.
the second impedance matching circuit 302 may be configured to interrupt the direct current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. Good.
the second set of first and second electrodes 141 and 145 may be supported by the vacuum vessel 110 through the insulators 142 and 146, respectively.
the plasma processing apparatus 1 can include a first high frequency power supply 101, and a first impedance matching circuit 102 disposed between the first high frequency power supply 101 and the first balun 103.
the first high frequency power supply 101 supplies a high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a and 104b.
the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103.
the first balun 103 and the first set of first electrode 105 a and second electrode 105 b constitute a first high frequency supply unit for supplying a high frequency to the internal space of the vacuum vessel 110.
the plasma processing apparatus 1 can include a second high frequency power supply 301, and a second impedance matching circuit 302 disposed between the second high frequency power supply 301 and the second balun 303.
the second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302.
the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 of the second set via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304.
the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.
the second balun 303 and the first electrode 141 and the second electrode 145 of the second set constitute a second high frequency supply unit for supplying a high frequency to the internal space of the vacuum vessel 110.
the first set of first from the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The impedance when looking at the side of the first electrode 105a and the second electrode 105b (the side of the main body 10) is Rp1-jXp1. Further, a reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is assumed to be X1. In this definition, satisfying 1.5 ⁇ X1 / Rp1 ⁇ 5000 is advantageous for stabilizing the potential of plasma formed in the inner space of the vacuum vessel 110.
a reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is assumed to be X2. In this definition, satisfying 1.5 ⁇ X2 / Rp2 ⁇ 5000 is advantageous for stabilizing the potential of plasma formed in the inner space of the vacuum vessel 110.
the plasma processing apparatus 1 of the seventh embodiment can further include at least one of a mechanism for moving the first electrode 141 constituting the second set up and down and a mechanism for rotating the first electrode 141 constituting the second set.
the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for moving the first electrode 141 up and down and a mechanism for rotating the first electrode 141.
the plasma processing apparatus 1 is equipped with the mechanism 314 which raises / lowers the 2nd electrode 145 which comprises a 2nd group. Between the vacuum vessel 110 and the drive mechanisms 114, 314, a bellows that constitutes a vacuum partition can be provided.
a current flowing through the first unbalanced terminal 201 is I1
a current flowing through the first balanced terminal 211 is I2
a current flowing through the second unbalanced terminal 202 is I2 '
a current flowing to the ground among the current I2 is I3.
the impedance (including the reactance of the blocking capacitors 104a and 104b) when the side of the first electrode 105a and the side of the second electrode 105b (the side of the main body 10) is viewed from the side of 212 is shown.
Rp indicates a resistance component
-Xp indicates a reactance component.
X indicates a reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103.
ISO has a correlation to X / Rp.
the relationship of FIG. 4 is also true in the seventh embodiment.
the present inventor also describes that 1.5 ⁇ X / Rp ⁇ 5000 is satisfied in the internal space of the vacuum vessel 110 (the space between the first electrode 105 a and the second electrode 105 b). It has been found that it is advantageous to make the potential of the generated plasma (plasma potential) insensitive to the state of the inner surface of the vacuum vessel 110.
the insensitivity of the plasma potential to the state of the inner surface of the vacuum vessel 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long time.
1.5 ⁇ X / Rp ⁇ 5000 corresponds to ⁇ 10.0 dB ⁇ ISO ⁇ -80 dB.
FIG. 15A shows the plasma potential when the resistive film (1 m ⁇ ) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) Is shown.
FIG. 15A shows the plasma potential when the resistive film (1 m ⁇ ) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) Is shown.
FIG. 15B shows the plasma potential when the resistive film (1000 ⁇ ) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) Is shown.
FIG. 15C shows the plasma potential when the inductive film (0.6 ⁇ H) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) (Potential) is shown.
FIGS. 15A-15D shows the plasma potential when the capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 (Potential) is shown. It is understood from FIGS. 15A-15D that satisfying 1.5 ⁇ X / Rp ⁇ 5000 is advantageous for the inner surface of the vacuum vessel 110 to stabilize the plasma potential in various states.
FIG. 16A to 16D simulate the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ⁇ X / Rp ⁇ 5000 is not satisfied. The results are shown.
FIG. 16A shows the plasma potential when the resistive film (1 m ⁇ ) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) Is shown.
FIG. 16B shows the plasma potential when the resistive film (1000 ⁇ ) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) Is shown.
FIG. 16C shows the plasma potential when the inductive film (0.6 ⁇ H) is formed on the inner surface of the vacuum chamber 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) (Potential) is shown.
FIGS. 16A to 16D shows the plasma potential when the capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 (Potential) is shown. From FIGS. 16A to 16D, it is understood that the plasma potential changes depending on the state of the inner surface of the vacuum vessel 110 when 1.5 ⁇ X / Rp ⁇ 5000 is not satisfied.
the plasma potential is likely to change depending on the state of the inner surface of the vacuum vessel 110.
X / Rp> 5000 in a state where a film is not formed on the inner surface of the vacuum vessel 110, discharge occurs only between the first electrode 105a and the second electrode 105b.
X / Rp> 5000 when a film starts to be formed on the inner surface of the vacuum vessel 110, the plasma potential reacts sensitively to the result as illustrated in FIGS. 16A to 16D.
the structure of the plasma processing apparatus 1 of the eighth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus of the eighth embodiment can operate as a sputtering apparatus for forming a film on a substrate 112 by sputtering. Matters not mentioned as the plasma processing apparatus 1 of the eighth embodiment can follow the first to seventh embodiments.
the plasma processing apparatus 1 of the eighth embodiment includes a balun (first balun) 103, a vacuum vessel 110, a first electrode 105a, and a second electrode 105b.
the plasma processing apparatus 1 includes the balun 103 and the main body 10
the main body 10 includes the vacuum vessel 110, the first electrode 105a, and the second electrode 105b.
the main body 10 has a first terminal 251 and a second terminal 252.
the first electrode 105a has a first holding surface HS1 holding a first target 109a as a first member, and the second electrode 105b holds a second holding surface HS2 holding a second target 109b as a second member. It can have The first holding surface HS1 and the second holding surface HS2 can belong to one plane PL.
the plasma processing apparatus 1 of the eighth embodiment may further include a second balun 303, a third electrode 141, and a fourth electrode 145.
the plasma processing apparatus 1 includes the first balun 103, the second balun 303, the vacuum vessel 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. It can be equipped.
the plasma processing apparatus 1 includes the first balun 103, the second balun 303, and the main body 10.
the main body 10 includes the vacuum chamber 110, the first electrode 105a, the second electrode 105b, and the third electrode. It may be understood as having 141 and a fourth electrode 145.
the main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.
the first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211 and a second balanced terminal 212.
An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103.
Balance circuit is connected.
the second balun 303 may have the same configuration as the first balun 103.
the second balun 303 has a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411 and a fourth balanced terminal 412.
An unbalanced circuit is connected to the side of the third unbalanced terminal 401 and the fourth unbalanced terminal 402 of the second balun 303, and the side of the third balanced terminal 411 and the fourth balanced terminal 412 of the second balun 303.
Balance circuit is connected.
the vacuum vessel 110 is grounded.
the baluns 103, 303 may have, for example, the configuration described in FIGS. 2A, 2B (FIG. 14).
the first electrode 105a holds the first target 109a, and faces the space on the side of the substrate 112 to be processed via the first target 109a.
the second electrode 105b is disposed adjacent to the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b.
the targets 109a and 109b can be, for example, an insulator material or a conductor material.
the first electrode 105 a is electrically connected to the first balanced terminal 211 of the first balun 103
the second electrode 105 b is electrically connected to the second balanced terminal 212 of the first balun 103.
the third electrode 141 holds the substrate 112.
the fourth electrode 145 may be disposed around the third electrode 141.
the third electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the fourth electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303.
the first electrode 105 a is electrically connected to the first terminal 251, the second electrode 105 b is electrically connected to the second terminal 252, and the first terminal 251 is the first balance of the first balun 103.
the terminal 211 is electrically connected and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103.
the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is a second balun 303. It can be understood that the first balanced terminal 411 is electrically connected, and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303.
the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected by the first path PTH1.
a variable reactance 511a may be disposed in the first path PTH1.
the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the variable reactance 511a.
the variable reactance 511 a may include a capacitor between the first balanced terminal 211 of the first balun 103 and the first electrode 105 a (or alternatively, the first balanced terminal 211 of the first balun 103 and the second electrode of the first balun 103. It can function as a blocking capacitor that shuts off direct current at the balance terminal 212).
the second electrode 105 b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected by the second path PTH2.
the variable reactance 511b may be disposed in the second path PTH2.
the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the variable reactance 511b.
the variable reactance 511 b may include a capacitor, which is disposed between the second balanced terminal 212 of the first balun 103 and the second electrode 105 b (or alternatively, the first balanced terminal 211 of the first balun 103 and the second It can function as a blocking capacitor that shuts off direct current at the balance terminal 212).
the first electrode 105a and the second electrode 105b may be supported by the vacuum vessel 110 via the insulators 132a and 132b, respectively.
the plasma processing apparatus 1 can include a variable reactance 521a disposed between the first electrode 105a and the ground.
the plasma processing apparatus 1 can include a variable reactance 521 b disposed between the second electrode 105 b and the ground.
the plasma processing apparatus 1 can include a variable reactance 530 that connects the first path PTH1 and the second path PTH2.
the plasma processing apparatus 1 uses (a) the first reactive reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b.
the amount by which the first target 109a is sputtered by adjusting the value of the adjustment reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b The relationship with the amount by which the second target 109b is sputtered can be adjusted.
the relationship between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted.
the balance between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted.
Such a configuration is advantageous, for example, to reduce the down time of the plasma processing apparatus 1 by making the replacement timing of the first target 109 a and the replacement timing of the second target 109 b the same. Further, the thickness distribution of the film formed on the substrate 112 can also be adjusted.
the third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304.
the blocking capacitor 304 directs a DC current between the first balanced terminal 411 and the third electrode 141 of the second balun 303 (or alternatively, between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off.
the second impedance matching circuit 302 may be configured to interrupt the direct current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. Good.
the third electrode 141 and the fourth electrode 145 may be supported by the vacuum vessel 110 via the insulators 142 and 146, respectively.
the plasma processing apparatus 1 can include a first high frequency power supply 101, and a first impedance matching circuit 102 disposed between the first high frequency power supply 101 and the first balun 103.
the first high frequency power supply 101 supplies a high frequency between the first electrode 105 a and the second electrode 105 b via the first impedance matching circuit 102, the first balun 103 and the first path PTH 1.
the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103.
the first balun 103 and the first electrode 105 a and the second electrode 105 b constitute a first high frequency supply unit for supplying a high frequency to the internal space of the vacuum vessel 110.
the plasma processing apparatus 1 can include a second high frequency power supply 301, and a second impedance matching circuit 302 disposed between the second high frequency power supply 301 and the second balun 303.
the second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302.
the second high frequency power supply 301 supplies a high frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304.
the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.
the second balun 303 and the third electrode 141 and the fourth electrode 145 constitute a second high frequency supply unit for supplying a high frequency to the internal space of the vacuum vessel 110.
the first electrode 105a and the first electrode 105a from the side of the first balance terminal 211 and the second balance terminal 212
the impedance when looking at the side of the second electrode 105 b is Rp 1 -jXp 1.
a reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is assumed to be X1. In this definition, satisfying 1.5 ⁇ X1 / Rp1 ⁇ 5000 is particularly advantageous in order to stabilize the potential of plasma formed in the inner space of the vacuum vessel 110.
the condition of 1.5 ⁇ X / Rp1 ⁇ 5000 is not essential in the eighth embodiment but an advantageous condition.
the eighth embodiment by providing the balun 103, the potential of plasma can be stabilized more than when the balun 103 is not provided. Further, by providing the adjustment reactance, it is possible to adjust the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b.
the third electrode from the side of the first balance terminal 411 and the second balance terminal 412 of the second balun 303.
a reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is assumed to be X2.
satisfying 1.5 ⁇ X 2 / Rp 2 ⁇ 5000 is particularly advantageous in order to stabilize the potential of the plasma formed in the inner space of the vacuum vessel 110.
the condition of 1.5 ⁇ X / Rp2 ⁇ 5000 is not essential in the eighth embodiment but an advantageous condition.
the plasma processing apparatus 1 of the ninth embodiment includes at least one of a variable reactance 511a disposed in the first path PTH1 and a variable reactance 511b disposed in the second path PTH2.
the plasma processing apparatus 1 preferably includes both the variable reactance 511a disposed in the first path PTH1 and the variable reactance 511b disposed in the second path PTH2, but one of them has a value It may be a fixed reactance.
the first variable reactance 511a includes at least a variable inductor 601a, and can preferably include the variable inductor 601a and the capacitor 602a.
the variable inductor 601a may be disposed between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be disposed between the capacitor 602a and the first electrode 105a.
the second variable reactance 511b includes at least a variable inductor 601b, and may preferably include the variable inductor 601b and the capacitor 602b.
the variable inductor 601b may be disposed between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be disposed between the capacitor 602b and the second electrode 105b.
FIG. 24 in the plasma processing apparatus 1 of the ninth embodiment, when the values of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are set to 200 nH, Thickness distribution is shown.
the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are formed on the substrate 112 when the values are set to 400 nH.
the thickness distribution of the film is shown.
the horizontal axis is a position in the lateral direction (direction parallel to the surface of the substrate 112) in FIG. 18, and indicates the distance from the center of the substrate 112.
the thickness distribution of the film is largely different between the left side and the right side of the center of the substrate 112.
the values of the variable inductors 601a and 601b are 200 nH
the symmetry of the film thickness distribution is high between the left and right sides of the center of the substrate 112.
the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b when the values of the variable inductors 601a and 601b are 200 nH are greater than when the values of the variable inductors 601a and 601b are 400 nH. Good balance with 2 voltages.
FIG. 25 shows the first electrode 105a and the second electrode 105b when the values of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are changed in the plasma processing apparatus 1 of the ninth embodiment.
the voltage is shown.
the value of the variable inductors 601a and 601b is about 225 nH, the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b are substantially equal.
FIG. 19 schematically shows the configuration of a plasma processing apparatus 1 according to a tenth embodiment of the present invention. Matters not mentioned in the tenth embodiment can follow the eighth embodiment.
the plasma processing apparatus 1 of the tenth embodiment includes at least one of a variable reactance 511a disposed in the first path PTH1 and a variable reactance 511b disposed in the second path PTH2.
the plasma processing apparatus 1 preferably includes both the variable reactance 511a disposed in the first path PTH1 and the variable reactance 511b disposed in the second path PTH2, but one of them has a value It may be a fixed reactance.
the first variable reactance 511a includes at least a variable capacitor 604a, and can preferably include the variable capacitor 604a and the inductor 603a.
the variable capacitor 604a may be disposed between the inductor 603a and the first electrode 105a, or may be disposed between the first balanced terminal 211 (first terminal 251) and the inductor 603a.
the second variable reactance 511b includes at least a variable capacitor 604b, and may preferably include the variable capacitor 604b and the inductor 603b.
the variable capacitor 604b may be disposed between the inductor 603b and the second electrode 105b, or may be disposed between the second balanced terminal 212 (second terminal 252) and the inductor 603b.
the configuration of the plasma processing apparatus 1 of the eleventh embodiment of the present invention is schematically shown in FIG. Matters not mentioned in the eleventh embodiment can follow the eighth embodiment.
the plasma processing apparatus 1 of the eleventh embodiment includes a variable capacitor 605a as a variable reactance 521a disposed between the first electrode 105a and the ground, and a variable reactance disposed between the second electrode 105b and the ground. At least one of the variable capacitors 605 b as 521 b is provided.
Plasma processing apparatus 1 further includes a reactance arranged in first path PTH1 (in this example, inductor 603a and capacitor 602a) and a reactance arranged in second path PTH2 (in this example, inductor 603b, capacitor 602b) And can be provided.
FIG. 21 schematically shows the configuration of a plasma processing apparatus 1 of a twelfth embodiment of the present invention. Matters not mentioned in the twelfth embodiment can follow the eighth embodiment.
the plasma processing apparatus 1 of the twelfth embodiment includes at least one of a variable reactance 521a disposed between the first electrode 105a and the ground, and a variable reactance 521b disposed between the second electrode 105b and the ground. Is equipped.
the variable reactance 521a includes at least a variable inductor 607a, and may include, for example, the variable inductor 607a and the capacitor 606a.
the variable reactance 521b includes at least a variable inductor 607b, and may include, for example, the variable inductor 607b and the capacitor 606b.
Plasma processing apparatus 1 further includes a reactance arranged in first path PTH1 (in this example, inductor 603a and capacitor 602a) and a reactance arranged in second path PTH2 (in this example, inductor 603b, capacitor 602b) And can be provided.
first path PTH1 in this example, inductor 603a and capacitor 602a
second path PTH2 in this example, inductor 603b, capacitor 602b
the structure of the plasma processing apparatus 1 of the thirteenth embodiment of the present invention is schematically shown in FIG. Matters not mentioned in the thirteenth embodiment can follow the eighth embodiment.
the plasma processing apparatus 1 of the thirteenth embodiment includes a variable inductor 608 as a variable reactance 530 that connects the first path PTH1 and the second path PTH2.
Plasma processing apparatus 1 further includes a reactance arranged in first path PTH1 (in this example, inductor 603a and capacitor 602a) and a reactance arranged in second path PTH2 (in this example, inductor 603b, capacitor 602b) And can be provided.
the configuration of a plasma processing apparatus 1 according to a fourteenth embodiment of the present invention is schematically shown in FIG. Matters not mentioned in the fourteenth embodiment can follow the eighth embodiment.
the plasma processing apparatus 1 of the fourteenth embodiment includes a variable capacitor 609 as a variable reactance 530 that connects the first path PTH1 and the second path PTH2.
Plasma processing apparatus 1 further includes a reactance arranged in first path PTH1 (in this example, inductor 603a and capacitor 602a) and a reactance arranged in second path PTH2 (in this example, inductor 603b, capacitor 602b) And can be provided.
the electrodes are disposed on the opposing surfaces of the targets 109 a and 109 b, but the present invention is not limited to the electrodes, and a so-called carousel type is used.
Cylindrical substrate rotation holder for example, JP 2003-1555526, JP 62-133065
a substrate tray such as a rectangular shape in a so-called in-line type plasma apparatus (for example, JP 5824072 An open 2011-144450) may be arranged.
the configuration of the plasma processing apparatus 1 of the fifteenth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the fifteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the ninth embodiment shown in FIG.
the control unit 700 determines the value of the adjustment reactance so that, for example, the first voltage V1 and the second voltage V2 become equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.
control unit 700 adjusts the values of the variable inductors 601a and 601b based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively. Generate the value CNT2.
the configuration of the plasma processing apparatus 1 of the sixteenth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the sixteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the tenth embodiment shown in FIG.
the control unit 700 determines the value of the adjustment reactance so that, for example, the first voltage V1 and the second voltage V2 become equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the For example, the control unit 700 adjusts the values of the variable capacitors 604a and 604b based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively. Generate the value CNT2.
the configuration of a plasma processing apparatus 1 of the seventeenth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the seventeenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the eleventh embodiment shown in FIG.
the control unit 700 determines the value of the adjustment reactance so that, for example, the first voltage V1 and the second voltage V2 become equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the For example, the control unit 700 adjusts the values of the variable capacitors 605a and 605b based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively. Generate the value CNT2.
the configuration of a plasma processing apparatus 1 of the eighteenth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the eighteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the twelfth embodiment shown in FIG.
the control unit 700 determines the value of the adjustment reactance so that, for example, the first voltage V1 and the second voltage V2 become equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the For example, the control unit 700 adjusts the values of the variable inductors 607a and 607b based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively. Generate the value CNT2.
the configuration of the plasma processing apparatus 1 of the nineteenth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the nineteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the thirteenth embodiment shown in FIG.
the control unit 700 determines the value of the adjustment reactance so that, for example, the first voltage V1 and the second voltage V2 become equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.
the controller 700 generates a command value CNT for adjusting the value of the variable inductor 608 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.
the structure of the plasma processing apparatus 1 of the twentieth embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the twentieth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the fourteenth embodiment shown in FIG.
the control unit 700 determines the value of the adjustment reactance so that, for example, the first voltage V1 and the second voltage V2 become equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.
the controller 700 generates a command value CNT for adjusting the value of the variable capacitor 609 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.
the configuration of the plasma processing apparatus 1 of the twenty-first embodiment of the present invention is schematically shown in FIG.
the plasma processing apparatus 1 of the twenty-first embodiment can operate as an etching apparatus for etching the substrates 112a and 112b.
the first electrode 105a and the second electrode 105b respectively hold the first substrate 112a and the second substrate 112b to be etched, and the third electrode 141 does not hold the substrate.
it may have the same configuration as the plasma processing apparatus 1 of the eighth embodiment in other points.
the plasma processing apparatus 1 uses (a) the first reactive reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b.
the etching amount distribution of the first substrate 112a and the first substrate 112a can be adjusted by adjusting the value of the adjustment reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b.
the etching amount distribution of the two substrates 112b can be adjusted.
the etching amount distribution of the first substrate 112a is adjusted by adjusting the value of the adjustment reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b.
the etching amount distribution of the second substrate 112b can be made the same.
the present invention is not limited to the electrodes and may be of a so-called carousel type.
Cylindrical substrate rotation holder for example, JP 2003-1555526, JP 62-133065
a substrate tray such as a rectangular shape in a so-called in-line type plasma apparatus (for example, JP 5824072 An open 2011-144450) may be arranged.
the control unit 700 is configured to adjust the adjustment reactance based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the value.
the control unit 700 may be configured to adjust the adjustment reactance based on the plasma intensity in the vicinity of the first electrode 105 a and the plasma intensity in the vicinity of the second electrode 105 b.
the plasma intensity in the vicinity of the first electrode 105a can be detected by, for example, a photoelectric conversion device.
the plasma intensity in the vicinity of the second electrode 105 b can be detected by, for example, a photoelectric conversion device.
the controller 700 controls the plasma intensity in the vicinity of the first electrode 105a and the plasma intensity in the vicinity of the second electrode 105b based on the plasma intensity in the vicinity of the first electrode 105a and the plasma intensity in the vicinity of the second electrode 105b.
the substrate 112 is processed in the plasma processing apparatus 1 of any of the eighth to twenty-first embodiments.
the plasma processing method comprises the steps of adjusting the adjustment reactance such that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is adjusted; and after the step , And processing the substrate 112.
the process may include forming a film on the substrate 112 by sputtering or etching the substrate 112.
Plasma processing apparatus 10 Main body 101: High frequency power supply 102: Impedance matching circuit 103: Balun 104: Blocking capacitor 106: First electrode 107, 108: Insulator 109: Target 110: Vacuum Container 111: second electrode 112: substrate 201: first unbalanced terminal 202: second unbalanced terminal 211: first balanced terminal 212: second balanced terminal 251: first terminal 252: Second terminal 221: first coil 222: second coil 223: third coil 224: fourth coil 511a, 511b, 521a, 521b, 530: variable reactance 700: controller

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PCT/JP2018/024148 2017-06-27 2018-06-26 プラズマ処理装置 WO2019004186A1 (ja)

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JP2019526925A JP6656480B2 (ja)	2017-06-27	2018-06-26	プラズマ処理装置および方法
PCT/JP2018/047319 WO2020003557A1 (ja)	2018-06-26	2018-12-21	プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体
FIEP18924031.0T FI3817517T3 (fi)	2018-06-26	2018-12-21	Plasmakäsittelylaite, plasmakäsittelymenetelmä, ohjelma ja muistiväline
EP24187057.5A EP4421844A3 (en)	2018-06-26	2018-12-21	Plasma treatment device, plasma treatment method, program, and memory medium
EP24187058.3A EP4425529A3 (en)	2018-06-26	2018-12-21	Plasma processing apparatus, plasma processing method, program, and memory medium
JP2019563646A JP6688440B1 (ja)	2018-06-26	2018-12-21	プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体
CN201880094963.9A CN112292911A (zh)	2018-06-26	2018-12-21	等离子体处理装置、等离子体处理方法、程序和存储介质
SG11202009122YA SG11202009122YA (en)	2018-06-26	2018-12-21	Plasma processing apparatus, plasma processing method, program, and memory medium
KR1020207036923A KR102439024B1 (ko)	2018-06-26	2018-12-21	플라스마 처리 장치, 플라스마 처리 방법, 프로그램, 및 메모리 매체
EP18924031.0A EP3817517B1 (en)	2018-06-26	2018-12-21	Plasma treatment device, plasma treatment method, program, and memory medium
PL18924031.0T PL3817517T3 (pl)	2018-06-26	2018-12-21	Urządzenie do obróbki plazmą, sposób obróbki plazmą, program oraz nośnik pamięci
TW107146926A TWI716796B (zh)	2017-06-27	2018-12-25	電漿處理裝置、電漿處理方法、程式及記憶媒體
US17/023,675 US11600466B2 (en)	2018-06-26	2020-09-17	Plasma processing apparatus, plasma processing method, and memory medium

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PCT/JP2017/023603 WO2019003309A1 (ja)	2017-06-27	2017-06-27	プラズマ処理装置
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JP6458206B1 (ja)	2019-01-23	プラズマ処理装置
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