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WO2018036258A1 - Oled器件及制作方法、显示面板以及显示装置 - Google Patents

Oled器件及制作方法、显示面板以及显示装置 Download PDF

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WO2018036258A1
WO2018036258A1 PCT/CN2017/089961 CN2017089961W WO2018036258A1 WO 2018036258 A1 WO2018036258 A1 WO 2018036258A1 CN 2017089961 W CN2017089961 W CN 2017089961W WO 2018036258 A1 WO2018036258 A1 WO 2018036258A1
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layer
electrode layer
pixel defining
oled device
insulating layer
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PCT/CN2017/089961
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English (en)
French (fr)
Inventor
张粲
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京东方科技集团股份有限公司
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Priority to US15/739,941 priority Critical patent/US10270054B2/en
Priority to EP17822112.3A priority patent/EP3506379B1/en
Priority to JP2017566305A priority patent/JP7051440B2/ja
Publication of WO2018036258A1 publication Critical patent/WO2018036258A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the present disclosure relates to organic electroluminescent illumination and display technologies, and more particularly to OLED devices and methods of fabrication, display panels, and display devices.
  • OLED devices are a hot spot in the field of illumination and display and are receiving more and more attention.
  • One problem that exists in OLED devices is that as the size of the device increases, a drive voltage drop due to the difference in resistance of the electrode material occurs at different portions of the device, which causes the brightness of the OLED device to be uneven.
  • Embodiments of the present disclosure provide an OLED device and a method of fabricating the same, a display panel, and a display device.
  • a first aspect of the present disclosure provides an OLED device including: a first electrode layer, a light emitting layer, and a second electrode layer which are sequentially disposed.
  • the OLED device further includes an insulating layer and an auxiliary electrode layer.
  • An insulating layer is disposed over the second electrode layer.
  • the auxiliary electrode layer is disposed over the insulating layer and is electrically connected to the first electrode layer.
  • the OLED device further includes a pixel definition layer.
  • a pixel defining layer is disposed over the first electrode layer and defines a pixel defining region.
  • Light emitting layer, second electrode The layer and the insulating layer are disposed in the pixel defining area.
  • the pixel defining layer has via holes, and the auxiliary electrode layer is electrically connected to the first electrode layer through via holes of the pixel defining layer.
  • the OLED device further includes a pixel definition layer.
  • a pixel defining layer is disposed over the first electrode layer and defines a pixel defining region.
  • the light emitting layer and the second electrode layer are disposed in the pixel defining region.
  • the insulating layer is disposed in the pixel defining region and the pixel defining layer, the pixel defining layer and the insulating layer have via holes, the via hole of the insulating layer is disposed above the via hole of the pixel defining layer, and the auxiliary electrode layer passes through the via hole of the insulating layer and The via of the pixel defining layer is electrically connected to the first electrode layer.
  • the first electrode layer is an anode layer and the second electrode layer is a cathode layer.
  • the first electrode layer is a transparent electrode layer and the second electrode layer is a reflective electrode layer.
  • a second aspect of the present disclosure provides a method for fabricating an OLED device, comprising: forming a first electrode layer; forming a pixel defining layer on the first electrode layer, and defining a pixel defining layer a pixel defining region, and the pixel defining layer includes a via hole; on the first electrode layer, forming a light emitting layer and a second electrode layer in the pixel defining region; and forming an insulating layer in the pixel defining region on the second electrode layer On the insulating layer, an auxiliary electrode layer is formed, wherein the auxiliary electrode layer and the first electrode layer are electrically connected through via holes of the pixel defining layer.
  • the method of fabricating the OLED device further includes forming an insulating layer on the pixel defining layer.
  • the insulating layer includes via holes, and via holes of the insulating layer are over the via holes of the pixel defining layer.
  • the auxiliary electrode layer and the first electrode layer are electrically connected through the via of the insulating layer and the via of the pixel defining layer.
  • an insulating layer is formed using a chemical vapor deposition method using an open mask.
  • the auxiliary electrode layer is formed using an evaporation method.
  • the auxiliary electrode layer is formed using an evaporation method using an open mask or a fine metal mask.
  • a third aspect of the present disclosure provides a display panel including a substrate, and a plurality of the above-described OLED devices disposed on the substrate.
  • a fourth aspect of the present disclosure provides a display device including the above display panel.
  • An OLED device and a manufacturing method, a display panel, and a display device according to embodiments of the present disclosure. While improving the problem of uneven illumination, the auxiliary electrode layer does not block the light emitted by the OLED device. Also, an etching process is not required when forming the auxiliary electrode layer.
  • Figure 1 is a schematic layer structure diagram of an OLED device
  • FIG. 2 is a schematic flow chart of a method of fabricating an OLED device
  • FIG. 3 is a schematic layer structure diagram of an OLED device provided in accordance with a first embodiment of the present disclosure
  • FIG. 4 is a schematic layer structure diagram of an OLED device provided in accordance with a second embodiment of the present disclosure.
  • FIG. 5 is a schematic layer structural view of an OLED display panel according to a third embodiment of the present disclosure.
  • FIG. 6 is a schematic flow chart of a method of fabricating an OLED device according to a fourth embodiment of the present disclosure.
  • FIG. 7 is a schematic plan view of an OLED display panel after forming a transparent electrode layer on a substrate in the method shown in FIG. 6;
  • FIG. 8 is a schematic plan view of an OLED display panel after forming a pixel defining layer in the method shown in FIG. 6;
  • FIG. 9 is a schematic plan view of an OLED display panel after forming a light-emitting layer and a reflective electrode layer in the method shown in FIG. 6;
  • FIG. 10 is a schematic layer structural view of an OLED device in an OLED display panel in which a light-emitting layer and a reflective electrode layer are formed in the method shown in FIG. 6.
  • FIG. 10 is a schematic layer structural view of an OLED device in an OLED display panel in which a light-emitting layer and a reflective electrode layer are formed in the method shown in FIG. 6.
  • the OLED device includes an auxiliary electrode layer 6, an insulating layer 4, a transparent electrode layer 1, a light-emitting layer 2, and a reflective electrode layer 3 which are sequentially laminated, and the insulating layer 4 is perforated such that the transparent electrode layer 1 and the auxiliary electrode layer 6 Connected.
  • the transparent electrode layer 1 is made of a conductive ITO material
  • the OLED device is plated with a highly conductive metal to form the auxiliary electrode layer 6 to improve the uniformity of the conductive layer of the transparent electrode layer 1 and solve the problem that the OLED device is particularly large.
  • the problem of brightness non-uniformity of sized OLED devices is particularly large.
  • the material of the auxiliary electrode layer 6 may be Cr, Mo/Al/Mo, Ag or the like having good conductivity, and the square resistance is small. Due to the presence of the auxiliary electrode layer 6, the brightness uniformity of the OLED display panel is greatly improved, and the method can also be applied to a white organic organic light emitting diode (WOLED) panel.
  • WOLED white organic light emitting diode
  • the auxiliary electrode layer 6 is made of an opaque metal material, and light cannot pass.
  • the auxiliary electrode layer 6 needs to cover the transparent electrode layer 1 in a mesh structure that communicates with each other, which blocks the light emission of the OLED device. Therefore, after the auxiliary electrode layer 6 is added, in order to maintain the same brightness, a larger driving current is required, which increases power consumption and cost. In addition, this also reduces the aperture ratio of the display panel using the OLED device.
  • FIG. 2 is a schematic flow chart of a method of fabricating an OLED device.
  • the OLED device is fabricated by: first lithographically forming an auxiliary electrode layer, second photolithographically forming an insulating layer, third photolithographically forming an anode layer, evaporating a luminescent layer, and evaporating a cathode layer.
  • photolithography is used, in which an etching process is required, which increases the cost.
  • Embodiments of the present disclosure provide an OLED device including: a first electrode layer 1, an illuminating layer 2, a second electrode layer 3, and an insulating layer 4 which are sequentially disposed.
  • OLED devices also include auxiliary The helper layer 6, the auxiliary electrode layer 6 is disposed over the insulating layer 4, and is electrically connected to the transparent electrode layer 1.
  • the first electrode layer 1 is a transparent electrode layer
  • the second electrode layer 3 is a reflective electrode layer. It should be understood that this is not a limitation of the invention.
  • the light emitted from the OLED device is emitted from the light-emitting layer 2 toward the transparent electrode layer 1, and the auxiliary electrode layer 6 is located in the opposite direction. Therefore, the auxiliary electrode layer 5 does not block the light emitted from the OLED device.
  • the transparent electrode layer 1 may be an anode layer, and in this case, the reflective electrode layer 3 is a cathode layer.
  • the transparent electrode layer 1 may also be a cathode layer, and in this case, the reflective electrode layer 3 is an anode layer.
  • the OLED device includes a transparent electrode layer 1, a pixel defining layer 5, a light emitting layer 2, a reflective electrode layer 3, and an insulating layer 4.
  • the pixel defining layer 5 is disposed over the transparent electrode layer 1 and defines a pixel defining region.
  • the light-emitting layer 2, the reflective electrode layer 3, and the insulating layer 4 are sequentially disposed over the transparent electrode layer 1, and are disposed in the pixel defining region.
  • the OLED device further comprises an auxiliary electrode layer 6 which is arranged over the insulating layer 4 and which is connected to the transparent electrode layer 1 via vias 7 of the pixel defining layer 5.
  • the light emitted from the OLED device is emitted from the light-emitting layer 2 toward the transparent electrode layer 1, and the auxiliary electrode layer 6 is located in the opposite direction. Therefore, the auxiliary electrode layer 6 does not block the light emitted from the OLED device. According to an embodiment of the present disclosure, when the brightness uniformity of the OLED display panel is improved, the brightness thereof is not changed.
  • the insulating layer 4 is disposed in the pixel defining region, and may be formed using the same or similar mask as the light-emitting layer 2 and the reflective electrode layer 3, simplifying the fabrication process.
  • the insulating layer 4 is disposed in the pixel defining region and on the pixel defining layer 5, and has a via hole 8.
  • the insulating layer 4 may be extended for encapsulation of the OLED device.
  • the insulating layer 4 has via holes 8 and the via holes 8 are above the via holes 7.
  • the via holes 7 and the via holes 8 realize the auxiliary electrode layer 6 and the transparent electrode layer. 1 electrical connection.
  • FIG. 5 is a schematic layer structural view of an OLED display panel provided in accordance with a third embodiment of the present disclosure.
  • an OLED display panel includes a substrate 9 and a substrate A plurality of the above OLED devices are disposed on 9.
  • a plurality of OLED devices shown in FIG. 3 are shown in FIG. 5, but it can be understood that the OLED device in FIG. 5 can also be the OLED device shown in FIG.
  • the auxiliary electrode layer does not block the light emitted by the OLED device. Therefore, when the OLED display panel is fabricated, the auxiliary electrode layer of the entire panel can be formed into an arbitrary pattern without being limited to a grid-like structure. In this way, not only the square resistance can be further reduced, the brightness uniformity is improved, the etching process is removed, and the manufacturing method is simplified.
  • FIG. 6 is a schematic flow chart of a method of fabricating an OLED device according to a fourth embodiment of the present disclosure.
  • 7 is a schematic plan view of an OLED display panel in which a transparent electrode layer is formed on a substrate in the method illustrated in FIG. 6.
  • FIG. 8 is a schematic plan view of an OLED display panel in which a pixel defining layer is formed in the method illustrated in FIG. 6.
  • FIG. 9 is a schematic plan view of an OLED display panel in which a light-emitting layer and a reflective electrode layer are formed in the method shown in FIG. 6.
  • FIG. 10 is a schematic layer structural view of an OLED device in an OLED display panel in which a light-emitting layer and a reflective electrode layer are formed in the method shown in FIG. 6.
  • a method for fabricating an OLED device is used to fabricate the OLED device described above, the method comprising: forming a transparent electrode layer 1; forming a pixel defining layer 5 on the transparent electrode layer 1
  • the defining layer 5 divides the pixel defining region, and the pixel defining layer 5 includes the via hole 7; on the transparent electrode layer 1, in the pixel defining region, the light emitting layer 2 and the reflective electrode layer 3 are formed; on the reflective electrode layer 3,
  • an insulating layer 4 is formed; on the insulating layer 4, an auxiliary electrode layer 6 is formed, wherein the auxiliary electrode layer 6 and the transparent electrode layer 1 are electrically connected through the via 7 of the pixel defining layer 5.
  • the insulating layer 4 is disposed in the pixel defining region, and may be formed using the same or similar mask as the light emitting layer 2 and the reflective electrode layer 3, simplifying the fabrication process.
  • the insulating layer 4 when the insulating layer 4 is formed, the insulating layer 4 may also be disposed in the pixel defining region and on the pixel defining layer 5, and includes a via 8 located above the via 7.
  • the auxiliary electrode layer 6 when the auxiliary electrode layer 6 is formed, the auxiliary electrode layer 6 and the transparent electrode layer 1 are electrically connected through the via holes of the insulating layer 4 and the via holes of the pixel defining layer 5.
  • the insulating layer 4 can be extended for packaging the OLED device, in which case the insulating layer 4 has vias 8, vias 7 and vias 8 The connection of the auxiliary electrode layer 6 to the transparent electrode layer 1 is achieved.
  • the auxiliary electrode layer 6 may be formed using an evaporation method, in particular, an evaporation method using an open mask.
  • a Fine Metal Mask can also be used.
  • the vapor deposition method using a mask may include the following steps: First, a mask having an open region is covered on the vapor deposition surface. Then, the vapor-deposited surface is vapor-deposited, and at this time, the material on the vapor-deposited surface corresponding to the open region of the mask can be vapor-deposited, and the other positions are blocked, and the material is not vapor-deposited. Thus, the auxiliary electrode layer 6 of a predetermined pattern can be obtained by one vapor deposition without etching.
  • the entire auxiliary electrode layer 6 can also be obtained by direct vapor deposition when necessary.
  • the transparent electrode layer 1 of the OLED device is patterned by photolithography using an ITO material, and the transparent electrode layer 1 of the plurality of OLED devices can be obtained on the OLED display panel.
  • a pixel defining layer 5 of an OLED device is formed, which defines a plurality of regions corresponding to the transparent electrode layers 1 of the plurality of OLED devices for forming a plurality of OLED devices.
  • a via hole 7 is also left in the pixel defining layer 5 for the connection of the auxiliary electrode layer 6 and the transparent electrode layer 1.
  • the light-emitting layer 2 and the reflective electrode layer 3 are sequentially deposited on the transparent electrode layer by an evaporation method using an open mask. Further, Al may be used as the material of the reflective electrode layer 3. Between the transparent electrode layer 1 and the reflective electrode layer 3, a light-emitting functional layer such as a hole injection layer, a hole transport layer, an electron injection layer, or the like (not shown) may be further included.
  • a light-emitting functional layer such as a hole injection layer, a hole transport layer, an electron injection layer, or the like (not shown) may be further included.
  • the insulating layer 4 may be deposited by a chemical vapor deposition method (CVD) for isolating the reflective electrode layer 3 from the auxiliary electrode layer 6.
  • CVD chemical vapor deposition method
  • the insulating layer 4 can also function to encapsulate the OLED device.
  • the insulating layer 4 is a ceramic film of SiNx or SiO 2 or the like.
  • an open mask is also used for depositing the insulating layer 4.
  • the pattern of the open mask can cover the corresponding positions of the via 7 and the via 8 to form a via. 8, and the via hole 7 is left, which allows the auxiliary electrode layer 6 to be connected to the transparent electrode layer 1 through the via 8 of the insulating layer 4 and the via 7 of the pixel defining layer 5.
  • the evaporated layer or the deposited layer (including the light-emitting layer 2, the reflective electrode layer 3, and the insulating layer 4) in the pixel defining region does not cover the pixel defining layer 5
  • the via hole 7 is provided in advance to ensure the connection of the auxiliary electrode layer 6 and the transparent electrode layer 1.
  • the OLED device and the OLED display panel provided by the embodiments of the present disclosure can be applied to an OLED display device.
  • the OLED display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the insulating layer 4 is deposited, the auxiliary electrode layer 6 is evaporated on the insulating layer 4, and the auxiliary electrode layer 6 is connected to the transparent electrode layer 1 through the via hole 7
  • the pressure drop of the transparent electrode layer 1 is lowered without affecting the light emission.
  • the auxiliary electrode layer 6 does not need to be etched into a grid structure, and can be vapor-deposited on the entire surface, eliminating the etching process, further simplifying the fabrication process of the OLED device, and improving the production efficiency of the OLED device.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种OLED器件及制作方法、显示面板以及显示装置。OLED器件包括：依次设置的第一电极层（1）、发光层（2）、第二电极层（3）。OLED器件还包括绝缘层（4）以及辅助电极层（6）。绝缘层（4）设置在第二电极层（3）之上。辅助电极层（6）设置在绝缘层（4）之上，并且与第一电极层（1）电连接。在改善发光不均问题的同时，辅助电极层（6）不会遮挡OLED器件发出的光线。并且，形成辅助电极层（6）时不需要刻蚀工艺。

Description

OLED器件及制作方法、显示面板以及显示装置
相关申请的交叉引用
本申请要求2016年8月26日递交的中国专利申请第201610743210.9号的优先权，在此全文引用上述中国专利申请所公开的内容以作为本申请的一部分。
技术领域
本公开涉及有机电致发光照明及显示技术，尤其涉及OLED器件及制作方法、显示面板以及显示装置。
背景技术
有机电致发光二极管(OLED)器件是照明以及显示领域的一个热点，正受到越来越多的关注。在OLED器件中存在的一个问题是随着器件尺寸的增加，在器件的不同部位出现由电极材料的电阻差导致的驱动压降，该驱动压降使得OLED器件的亮度不均。
OLED器件存在改进空间。
发明内容
本公开的实施例提供了OLED器件及制作方法、显示面板以及显示装置。
本公开的第一个方面提供了一种OLED器件，包括：依次设置的第一电极层、发光层、以及第二电极层。OLED器件还包括绝缘层以及辅助电极层。绝缘层设置在第二电极层之上。辅助电极层设置在绝缘层之上，并且与第一电极层电连接。
在本公开的实施例中，OLED器件还包括像素定义层。像素定义层设置在所述第一电极层之上，并且划分出像素定义区域。发光层、第二电极 层以及绝缘层设置在像素定义区域中。像素定义层具有过孔，辅助电极层通过像素定义层的过孔与第一电极层电连接。
在本公开的实施例中，OLED器件还包括像素定义层。像素定义层设置在第一电极层之上，并且划分出像素定义区域。发光层以及第二电极层设置在像素定义区域中。绝缘层设置在像素定义区域中以及像素定义层上，像素定义层和绝缘层具有过孔，绝缘层的过孔设置于像素定义层的过孔的上方，辅助电极层通过绝缘层的过孔以及像素定义层的过孔与第一电极层电连接。
在本公开的实施例中，第一电极层是阳极层，第二电极层是阴极层。
在本公开的实施例中，第一电极层是透明电极层，第二电极层是反射电极层。
本公开的第二个方面提供了一种OLED器件的制作方法，用于制作上述的OLED器件，包括：形成第一电极层；在第一电极层上，形成像素定义层，像素定义层划分出像素定义区域，并且像素定义层包括过孔；在第一电极层上，在像素定义区域中，形成发光层、第二电极层；在第二电极层上，在像素定义区域中，形成绝缘层；在绝缘层上，形成辅助电极层，其中，通过所述像素定义层的过孔电连接所述辅助电极层与第一电极层。
在本公开的实施例中，OLED器件的制作方法还包括：在像素定义层上形成绝缘层。绝缘层包括过孔，绝缘层的过孔在所述像素定义层的过孔的上方。在形成辅助电极层的步骤中，通过绝缘层的过孔和像素定义层的过孔电连接辅助电极层与第一电极层。
在本公开的实施例中，使用采用了开放式掩模的化学气相沉积法形成绝缘层。
在本公开的实施例中，使用蒸镀法形成辅助电极层。
在本公开的实施例中，使用采用了开放式掩模或精细金属掩模的蒸镀法形成辅助电极层。
本公开的第三个方面提供了一种显示面板，包括基板，以及在基板上设置的多个上述的OLED器件。
本公开的第四个方面提供了一种显示装置，包括上述的显示面板。
根据本公开的实施例的OLED器件及制作方法、显示面板以及显示装置。在改善发光不均问题的同时，使得辅助电极层不会遮挡OLED器件发出的光线。并且，形成该辅助电极层时不需要刻蚀工艺。
附图说明
为了更清楚地说明本公开的实施例的技术方案，下面将对实施例的附图进行简要说明，应当知道，以下描述的附图仅仅涉及本公开的一些实施例，而非对本公开的限制，其中：
图1是OLED器件的一个示意性的层结构图；
图2是OLED器件的制造方法的一个示意性的流程图；
图3是根据本公开的第一实施例提供的OLED器件的示意性的层结构图；
图4是根据本公开的第二实施例提供的OLED器件的示意性的层结构图；
图5是根据本公开的第三实施例提供的OLED显示面板的示意性的层结构图；
图6是根据本公开的第四实施例提供的OLED器件制作方法的示意性的流程图；
图7是图6所示的方法中在基板上形成透明电极层后的OLED显示面板的示意性的俯视图；
图8是图6所示的方法中形成像素定义层后的OLED显示面板的示意性的俯视图；
图9是图6所示的方法中形成发光层和反射电极层后的OLED显示面板的示意性的俯视图；
图10是图6所示的方法中形成发光层和反射电极层后的OLED显示面板中的OLED器件的示意性的层结构图。
具体实施方式
为了使本公开的实施例的技术方案和优点更加清楚，下面将结合附图，对本公开的实施例的技术方案进行清楚、完整的描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域技术人员在无需创造性劳动的前提下所获得的所有其他实施例，也都属于本公开保护的范围。
图1是OLED器件的一个示意性的层结构图。如图1所示，OLED器件包括依次层叠的辅助电极层6、绝缘层4、透明电极层1、发光层2和反射电极层3，绝缘层4打孔使得透明电极层1和辅助电极层6相连。一般而言，透明电极层1使用导电的ITO材料时，OLED器件会镀上一层高导电性的金属形成辅助电极层6，以提高透明电极层1的导电均匀性，解决OLED器件尤其是大尺寸OLED器件的亮度不均匀性问题。辅助电极层6的材料可以为导电性较好的Cr、Mo/Al/Mo、Ag等，其方阻较小。由于辅助电极层6的存在，极大的提高了OLED显示面板的亮度均匀性，并且该方式也可以应用于白光有机电致发光二极管(WOLED)面板。
然而，通常，辅助电极层6由不透明的金属材料制成，光不能通过。辅助电极层6需要以相互联通的网状结构覆盖透明电极层1，这对于OLED器件的发光进行了遮挡。因此，增加辅助电极层6之后，为了维持相同的亮度，需要更大的驱动电流，这增加了功耗和成本。此外，这也会降低使用了OLED器件的显示面板的开口率。
图2是OLED器件的制造方法的一个示意性的流程图。如图2所示，OLED器件的制作方法包括：第一次光刻制作辅助电极层、第二次光刻制作绝缘层、第三次光刻制作阳极层、蒸镀发光层、蒸镀阴极层，以得到图1中所示的结构。为了得到相互联通的网状结构以尽可能增加光的通过性，在形成辅助电极层6时，使用光刻法，其中需要使用蚀刻工艺，这增加了成本。
本公开的实施例提供了OLED器件，OLED器件包括：依次设置的第一电极层1、发光层2、第二电极层3以及绝缘层4。OLED器件还包括辅 助电极层6，辅助电极层6设置在绝缘层4之上，并且与透明电极层1电连接。以下，均以第一电极层1为透明电极层，第二电极层3为反射电极层为例进行说明。应当理解，这并不是对于本发明的限制。
OLED器件发出的光线是从发光层2向透明电极层1方向射出，而辅助电极层6位于相反的方向，所以，辅助电极层5不会遮挡OLED器件发出的光线。根据本公开的实施例，在提高OLED显示面板的亮度均匀性时，不会改变其亮度。透明电极层1可以是阳极层，此时，反射电极层3是阴极层。透明电极层1也可以是阴极层，此时，反射电极层3是阳极层。
图3是根据本公开的第一实施例提供的OLED器件的示意性的层结构图。如图3所示，在本公开的实施例中，OLED器件包括：透明电极层1、像素定义层5、发光层2、反射电极层3以及绝缘层4。像素定义层5设置在透明电极层1之上，并且划分出像素定义区域。发光层2、反射电极层3以及绝缘层4依次设置在透明电极层1之上，并且设置在像素定义区域中。OLED器件还包括辅助电极层6，辅助电极层6设置在绝缘层4之上，并且通过像素定义层5的过孔7与透明电极层1连接。
OLED器件发出的光线是从发光层2向透明电极层1方向射出，而辅助电极层6位于相反的方向，所以，辅助电极层6不会遮挡OLED器件发出的光线。根据本公开的实施例，在提高OLED显示面板的亮度均匀性时，不会改变其亮度。
此外，如图3所示，绝缘层4设置在像素定义区域中，可以使用与发光层2以及反射电极层3相同或者相似的掩模形成，简化了制作过程。
图4是根据本公开的第二实施例提供的OLED器件的示意性的层结构图。在本公开的实施例中，绝缘层4设置在像素定义区域中以及像素定义层5上，并且具有过孔8。绝缘层4可以延伸以用于对OLED器件进行封装，此时，绝缘层4具有过孔8，过孔8在过孔7上方，过孔7和过孔8实现辅助电极层6与透明电极层1的电连接。
图5是根据本公开的第三实施例提供的OLED显示面板的示意性的层结构图。在本公开的实施例中，OLED显示面板包括基板9，以及在基板 9上设置的多个上述的OLED器件。图5中示出了多个图3所示的OLED器件，但是可以理解的是，图5中的OLED器件也可以是图4所示的OLED器件。
辅助电极层不会遮挡OLED器件发出的光线，因此，在制作OLED显示面板时，可以将整个面板的辅助电极层形成为任意图形，而不限于网格状的结构。这样，不仅可以进一步减小方阻，提高亮度均匀性，也去除了蚀刻工艺，简化了制作方法。
图6是根据本公开的第四实施例提供的OLED器件制作方法的示意性的流程图。图7是图6所示的方法中在基板上形成透明电极层后的OLED显示面板的示意性的俯视图。图8是图6所示的方法中形成像素定义层后的OLED显示面板的示意性的俯视图。图9是图6所示的方法中形成发光层和反射电极层后的OLED显示面板的示意性的俯视图。图10是图6所示的方法中形成发光层和反射电极层后的OLED显示面板中的OLED器件的示意性的层结构图。
如图6所示，在本公开的实施例中，OLED器件的制作方法用于制作上述的OLED器件，方法包括：形成透明电极层1；在透明电极层1上，形成像素定义层5，像素定义层5划分出像素定义区域，并且像素定义层5包括过孔7；在透明电极层1上，在像素定义区域中，形成发光层2、反射电极层3；在反射电极层3上，在像素定义区域中，形成绝缘层4；在绝缘层4上，形成辅助电极层6，其中，通过像素定义层5的过孔7电连接辅助电极层6与透明电极层1。
在本公开的实施例中，绝缘层4设置在像素定义区域中，可以使用与发光层2以及反射电极层3相同或者相似的掩模形成，简化了制作过程。
在本公开的实施例中，在形成绝缘层4时，绝缘层4还可以设置在像素定义区域中以及像素定义层5上，并且包括过孔8，过孔8位于过孔7的上方。在形成辅助电极层6时，通过绝缘层4的过孔和像素定义层5的过孔电连接辅助电极层6与透明电极层1。这样，绝缘层4可以延伸以用于对OLED器件进行封装，此时，绝缘层4具有过孔8，过孔7和过孔8 实现辅助电极层6与透明电极层1的连接。
在本公开的实施例中，可以使用蒸镀法，尤其是采用了开放式掩模(Open Mask)的蒸镀法，形成辅助电极层6。此外，也可以使用精细金属掩模(Fine Metal Mask)。
使用掩模的蒸镀法可以包括如下步骤：首先，在被蒸镀面上覆盖具有开放区域的掩模。然后，对于被蒸镀面进行蒸镀，此时，被蒸镀面上与掩模的开放区域对应的位置可以蒸镀上材料，而其它位置被遮挡，不会被蒸镀上材料。这样，可以通过一次蒸镀得到预定图案的辅助电极层6，而无需进行蚀刻。
当然，在需要时，也可以通过直接蒸镀的方式，得到整面的辅助电极层6。
如图7所示，在本公开的实施例中，OLED器件的透明电极层1使用ITO材料，通过光刻的方法图形化，可以在OLED显示面板上得到多个OLED器件的透明电极层1。
如图8所示，形成OLED器件的像素定义层5，像素定义层5划分出与多个OLED器件的透明电极层1相对应的多个区域，用于形成多个OLED器件。在该像素定义层5还留有过孔7，以用于辅助电极层6与透明电极层1的连接。
如图9和图10所示，在本公开的实施例中，使用采用了开放式掩模的蒸镀法，依次在透明电极层上蒸镀发光层2和反射电极层3。此外，反射电极层3的材料可以使用Al。在透明电极层1和反射电极层3之间，还可以包括发光功能层，例如空穴注入层、空穴传输层和电子注入层等(未图示)。
最后，返回图3或者图4，在本公开的实施例中，可以利用化学气相沉积的方法(CVD)沉积绝缘层4，以用于将反射电极层3与辅助电极层6隔离。如图4所示，绝缘层4还可以起到封装OLED器件的作用。绝缘层4为SiNx或SiO2等的陶瓷膜。此外，沉积绝缘层4时也使用开放式掩模，在绝缘层4还设置在像素定义层上时，开放式掩模的图案可以覆盖过 孔7和过孔8对应的位置，以形成过孔8，并且保留过孔7，这可以使得辅助电极层6通过绝缘层4的过孔8以及像素定义层5的过孔7与透明电极层1连接。
在本公开的实施例中，在制作过程中保证了在像素定义区域中的蒸镀的层或者沉积的层(包括发光层2、反射电极层3以及绝缘层4)都不覆盖像素定义层5上预先设置的过孔7，以保证辅助电极层6与透明电极层1的连接。
本公开的实施例提供的OLED器件和OLED显示面板可以应用于OLED显示装置。所述OLED显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在本公开的实施例中，反射电极层3蒸镀完毕后，沉积绝缘层4，在绝缘层4上蒸镀辅助电极层6，辅助电极层6通过过孔7与透明电极层1连接，可以降低透明电极层1的压降，且不会影响出光。辅助电极层6不需要蚀刻成网格结构，可以整面蒸镀，省去了刻蚀的工艺，进一步简化了OLED器件的制作流程，可提高OLED器件的生产效率。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (12)

  1. 一种OLED器件，包括：依次设置的第一电极层、发光层以及第二电极层；其中，所述OLED器件还包括绝缘层以及辅助电极层；所述绝缘层设置在所述第二电极层之上；所述辅助电极层设置在所述绝缘层之上，并且与所述第一电极层电连接。
  2. 根据权利要求1所述的OLED器件，其中，所述的OLED器件还包括像素定义层；所述像素定义层设置在所述第一电极层之上，并且划分出像素定义区域；所述发光层、第二电极层以及所述绝缘层设置在所述像素定义区域中；所述像素定义层具有过孔，所述辅助电极层通过所述像素定义层的过孔与所述第一电极层电连接。
  3. 根据权利要求1所述的OLED器件，其中，所述的OLED器件还包括像素定义层；所述像素定义层设置在所述第一电极层之上，并且划分出像素定义区域；所述发光层以及第二电极层设置在所述像素定义区域中；所述绝缘层设置在所述像素定义区域中以及所述像素定义层上；所述像素定义层和所述绝缘层具有过孔，所述绝缘层的过孔设置于所述像素定义层的过孔的上方；所述辅助电极层通过所述绝缘层的过孔以及所述像素定义层的过孔与所述第一电极层电连接。
  4. 根据权利要求1至3中任一项所述的OLED器件，其中，所述第一电极层是阳极层，所述第二电极层是阴极层。
  5. 根据权利要求1至3中任一项所述的OLED器件，其中，所述第一电极层是透明电极层，所述第二电极层是反射电极层。
  6. 一种OLED器件的制作方法，其中，包括：
    形成第一电极层；
    在所述第一电极层上，形成像素定义层，所述像素定义层划分出像素定义区域，并且，所述像素定义层包括过孔；
    在所述第一电极层上，在所述像素定义区域中，形成发光层、第二电极层；
    在所述第二电极层上，在所述像素定义区域中，形成绝缘层；
    在所述绝缘层上，形成辅助电极层，其中，通过所述像素定义层的过孔电连接所述辅助电极层与第一电极层。
  7. 根据权利要求6所述的OLED器件的制作方法，其中，还包括：在像素定义层上形成绝缘层，所述绝缘层包括过孔，所述绝缘层的过孔在所述像素定义层的过孔的上方；
    其中，在形成所述辅助电极层的步骤中，通过所述绝缘层的过孔和所述像素定义层的过孔电连接所述辅助电极层与所述第一电极层。
  8. 根据权利要求6-7中任一所述的OLED器件的制作方法，其中，使用采用了开放式掩模的化学气相沉积法形成所述绝缘层。
  9. 根据权利要求6-7中任一所述的OLED器件的制作方法，其中，使用蒸镀法形成所述辅助电极层。
  10. 根据权利要求9所述的OLED器件的制作方法，其中，使用采用了开放式掩模或精细金属掩模的蒸镀法形成所述辅助电极层。
  11. 一种显示面板，其中，包括基板，以及在基板上设置的多个根据权利要求1至5中任一项所述的OLED器件。
  12. 一种显示装置，其中，包括根据权利要求11所述的显示面板。
PCT/CN2017/089961 2016-08-26 2017-06-26 Oled器件及制作方法、显示面板以及显示装置 WO2018036258A1 (zh)

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