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WO2017114309A1 - 一种化学机械抛光液及其应用 - Google Patents

一种化学机械抛光液及其应用 Download PDF

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Publication number
WO2017114309A1
WO2017114309A1 PCT/CN2016/111722 CN2016111722W WO2017114309A1 WO 2017114309 A1 WO2017114309 A1 WO 2017114309A1 CN 2016111722 W CN2016111722 W CN 2016111722W WO 2017114309 A1 WO2017114309 A1 WO 2017114309A1
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WIPO (PCT)
Prior art keywords
chemical mechanical
polishing liquid
mechanical polishing
liquid according
acid
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PCT/CN2016/111722
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English (en)
French (fr)
Inventor
姚颖
荆建芬
蔡鑫元
邱腾飞
杨俊雅
Original Assignee
安集微电子科技(上海)有限公司
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Application filed by 安集微电子科技(上海)有限公司 filed Critical 安集微电子科技(上海)有限公司
Priority to US16/067,360 priority Critical patent/US20190062594A1/en
Publication of WO2017114309A1 publication Critical patent/WO2017114309A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Definitions

  • This invention relates to a chemical mechanical polishing fluid for TSV and IC barrier polishing.
  • interlayer dielectric silicon dioxide or silicon dioxide doped with other elements is interposed between the metal wires as an interlayer dielectric (ILD).
  • CMP chemical mechanical polishing
  • the CMP process uses an abrasive-containing mixture and a polishing pad to polish the surface of the integrated circuit.
  • the substrate is placed in direct contact with a rotating polishing pad and a load is applied to the backside of the substrate with a load.
  • the gasket and the table rotate while maintaining a downward force on the back of the substrate, applying abrasive and chemically active solutions (often referred to as polishing fluids or polishing slurries) to the gasket.
  • polishing fluids or polishing slurries abrasive and chemically active solutions
  • Silica as a dielectric material commonly used in integrated circuits, involves the removal of a silicon dioxide dielectric layer in many polishing processes.
  • the polishing slurry is mainly used to remove the oxide dielectric layer and planarize; when the shallow trench isolation layer is polished, the polishing liquid is mainly used for removing and planarizing the oxide dielectric layer.
  • the polishing solution needs to remove silicon dioxide, copper and barrier layer; in the through silicon via (TSV) process, the formation of via holes also requires the use of polishing solution to remove excess dioxide. silicon.
  • TSV through silicon via
  • This patent is intended to provide a highly concentrated barrier polishing solution suitable for use in TSV and silicon oxide-copper interconnect processes, which has a high barrier removal rate under milder conditions and is excellent for butterfly suppression. Deformation, metal corrosion and surface defects.
  • the present invention provides a chemical mechanical polishing liquid containing abrasive particles, an aminosilane coupling agent, an azole compound, a complexing agent, an organic phosphoric acid, an oxidizing agent, and water.
  • the chemical mechanical polishing liquid of the present invention wherein the abrasive particles are nano silica particles having a mass percentage of 0.5 to 30%, preferably 2 to 20%; and a particle diameter of 20 to 200 nm, preferably 30 to 150 nm. .
  • the structural formula of the aminosilane coupling agent is:
  • the aminosilane coupling agent is aminoethylmethyldiethoxysilane, aminoethylmethyldimethoxysilane, aminoethyldimethylmethoxysilane, aminopropylmethyldiethyl Oxysilane, aminopropylmethyldimethoxysilane, aminopropyldimethylmethoxysilane or aminopropyltrimethoxysilane.
  • the above aminosilane coupling agent is contained in an amount of from 0.005 to 0.3% by mass, preferably from 0.01 to 0.2% by mass.
  • the azole compound may be benzotriazole, methylbenzotriazole, 5-phenyltetrazolium, benzimidazole, 1,2,4-triazole, 3-amino- One or more of 1,2,4 triazole and 4-amino-1,2,4 triazole.
  • the azole compound has a mass percentage content of 0.001 to 1%, preferably 0.01 to 0.3%.
  • the complexing agent is one or more of an organic acid and an amino acid compound.
  • One or more of acetic acid, malonic acid, succinic acid, citric acid, glycine, valine, tyrosine, glutamic acid, lysine, arginine and tyrosine are preferred.
  • the complexing agent is present in an amount of from 0.01 to 2% by mass, preferably from 0.05 to 1% by mass.
  • the organic phosphoric acid is hydroxyethylidene diphosphonic acid, aminotrimethylenephosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriaminepentamethylenephosphonic acid, 2-phosphonic acid butyl Alkane-1,2,4-triphosphonic acid or polyaminopolyetherylmethylenephosphonic acid and the like.
  • the content of the organic phosphoric acid is 0.01 to 1.0% by mass, preferably 0.1 to 0.5% by mass.
  • the oxidizing agent is one or more of hydrogen peroxide, peracetic acid, potassium persulfate and ammonium persulfate.
  • the oxidizing agent is contained in an amount of 0.01 to 5% by mass, preferably 0.1 to 2% by mass.
  • the chemical mechanical polishing liquid described in the present invention has a pH of from 3 to 6, preferably from 4 to 6.
  • the chemical mechanical polishing liquid of the present invention may further contain other additives in the field such as a pH adjuster and a bactericide, and the balance is water.
  • the chemical mechanical polishing liquid of the present invention can be prepared by uniformly mixing the components other than the oxidizing agent, adjusting the pH to a desired pH with a pH adjusting agent (such as KOH or HNO3), and adding an oxidizing agent before use. Mix well.
  • a pH adjusting agent such as KOH or HNO3
  • the reagents and starting materials used in the present invention are commercially available.
  • Another aspect of the present invention relates to the polishing application of the chemical mechanical polishing liquid to the TSV and IC barrier layers, which has a strong ability to correct the surface of the silicon wafer while suppressing local and overall corrosion during polishing.
  • the nanoparticle modified by the aminosilane coupling agent of the invention is used as the abrasive particles, so that the polishing liquid has an excellent silica removal rate and can satisfy the dioxin in the barrier polishing process.
  • the polishing liquid of the present invention can be made into a highly concentrated product for storage and transportation.
  • the advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited only to the following examples.
  • the balance is water.
  • the polishing liquid of each example can be obtained by adjusting to a suitable pH with nitric acid or potassium hydroxide.
  • the content in Table 1 below is the mass percentage.
  • polishing performance of the above composition was investigated in this example, and the resulting composition was polished by the following conditions.
  • Table 2 compare polishing liquid 1 and polishing liquid 1 to 13 of the present invention to silicon dioxide (TEOS), copper (Cu), tantalum (Ta), titanium (Ti), silicon nitride (SiN), and low dielectric material (BD) Removal rate
  • the polishing liquid of the present invention can obtain a higher removal rate of barrier ruthenium, titanium and silicon dioxide (TEOS) than the comparative polishing liquid 1 and the comparative polishing liquid 2, while obtaining a lower nitrogen ratio.
  • the removal rate of silicon ensures that the polishing can be stopped on the surface of silicon nitride.
  • compositions 7 to 11 have a low abrasive particle content, and all of the highly concentrated polishing liquids can be prepared, which have excellent storage stability and polishing stability.
  • polishing performance of the above composition at low pressure was investigated, and the obtained composition was polished by the following conditions.
  • Table 3 Comparative polishing liquid and the polishing liquid of the present invention 1 to 6 pairs of silicon dioxide (TEOS), copper (Cu), tantalum (Ta), titanium (Ti), silicon nitride (SiN) and low dielectric material (BD) Removal rate
  • the polishing liquid of the present invention can obtain a higher removal rate of barrier bismuth, titanium and silicon dioxide (TEOS) than the comparative polishing liquid 1 and the comparative polishing liquid 2, and can satisfy the barrier polishing process.
  • TEOS barrier bismuth, titanium and silicon dioxide
  • Table 4 compares the correction ability of the polishing liquid 1 and the polishing liquids 1 and 2 of the present invention to the TSV pattern test wafer after polishing
  • Dishing in the table refers to the butterfly depression (A) on the metal pad before the barrier layer is polished.
  • the polishing results are shown in Table 4. Compared with the comparative polishing liquid, the polishing liquid of the present invention can better correct the butterfly-shaped depression generated on the wafer in the forward direction, and obtain a better crystal circular appearance.
  • Dishing in the table refers to the butterfly depression (angstrom) on the metal pad before the barrier layer is polished
  • Erosion refers to the erosion (angstrom) of the barrier layer on the thin line region (50% line). Refers to the corrective ability value after polishing.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Organic Chemistry (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本发明公开了一种高浓缩的化学机械抛光液及其应用，该抛光液包含：（a）研磨颗粒（b）氨基硅烷偶联剂（c）唑类化合物（d）络合剂（e）有机磷酸（f）氧化剂（g）水。本发明的化学机械抛光液用于TSV和IC阻挡层抛光，可以满足各种材料的抛光速率和选择比要求；该抛光液对硅片器件表面有很强的矫正能力，能实现快速平坦化，且可防止金属抛光过程中产生的局部和整体腐蚀，提高工作效率，降低生产成本。

Description

一种化学机械抛光液及其应用 技术领域
本发明涉及一种用于TSV和IC阻挡层抛光的化学机械抛光液。
背景技术
在集成电路的制造过程中，硅晶圆基片上往往构建了成千上万的结构单元，这些结构单元通过多层金属互连进一步形成功能性电路和元器件。在多层金属互连结构中，金属导线之间填充二氧化硅或掺杂其他元素的二氧化硅作为层间介电质(ILD)。随着集成电路金属互连技术的发展和布线层数的增加，化学机械抛光(CMP)已经广泛应用于芯片制造过程中的表面平坦化。这些平坦化的芯片表面有助于多层集成电路的生产，且防止将电介层涂覆在不平表面上引起的畸变。
CMP工艺就是使用一种含磨料的混合物和抛光垫抛光集成电路表面。在典型的化学机械抛光方法中，将衬底直接与旋转抛光垫接触，用一载重物在衬底背面施加压力。在抛光期间，垫片和操作台旋转，同时在衬底背面保持向下的力，将磨料和化学活性溶液(通常称为抛光液或抛光浆料)涂于垫片上，该抛光液与正在抛光的薄膜发生化学反应开始进行抛光过程。
二氧化硅作为集成电路中常用的介电材料，在很多抛光工艺中都会涉及二氧化硅介电层的去除。如在氧化物层间介质抛光过程中，抛光浆料主要用于去除氧化物介电层并平坦化；在浅沟槽隔离层抛光时，抛光液主要用于去除以及平坦化氧化物介电层并停在氮化硅上；在阻挡层抛光中，抛光液需要去除二氧化硅，铜和阻挡层；在硅通孔(TSV)工艺，通孔的形成也需要用抛光液去除多余的二氧化硅。在这些抛光工艺中，都要求较高的氧化物介电层的去除速率以保证产能。为了达到较高的氧化物材料去除速率，通常通过 提高研磨颗粒的用量来达到，这样做会提高抛光液的成本，而且研磨颗粒用量的增大不利于浓缩。现有技术WO2010033156A2中使用了季铵盐，季膦盐，氨基硅烷类化合物以提高抛光过程中二氧化硅材料的去除速率。
在CMP过程中除了要严格控制表面污染物以及杜绝金属腐蚀外，还要具有较低的蝶形凹陷和抛光均一性才能保证更加可靠的电性能，特别是阻挡层的平坦化过程中需要在更短的时间和更低的压力下快速移除阻挡层金属。本专利旨在提供一种高浓缩的适合于TSV和氧化硅-铜互连制程中的阻挡层抛光液，其在较温和的条件下具有高的阻挡层去除速率，并能很好的抑制蝶形凹陷，金属腐蚀和表面缺陷。
发明内容
本发明提供了一种化学机械抛光液，所述抛光液含有研磨颗粒，氨基硅烷偶联剂，唑类化合物，络合剂，有机磷酸，氧化剂和水。
本发明的化学机械抛光液，其中，所述的研磨颗粒为纳米二氧化硅颗粒，质量百分比含量为0.5-30％，优选为2-20％；粒径为20-200nm，优选为30-150nm。
本发明的化学机械抛光液，所述的氨基硅烷偶联剂结构式为：
Figure PCTCN2016111722-appb-000001
n＝1～12，
R1，R2＝
Figure PCTCN2016111722-appb-000002
(x＝0，1；y＝0～11)
R3，R4，R5，R6＝H，
Figure PCTCN2016111722-appb-000003
(z＝0～～11)
其中，所述氨基硅烷偶联剂为氨乙基甲基二乙氧基硅烷、氨乙基甲基二甲氧基硅烷、氨乙基二甲基甲氧基硅烷、氨丙基甲基二乙氧基硅烷、氨丙基甲基二甲氧基硅烷、氨丙基二甲基甲氧基硅烷或氨丙基三甲氧基硅烷。上述氨基硅烷偶联剂的质量百分比含量为0.005-0.3％，优选为0.01-0.2％。
其中，所述的唑类化合物可为苯并三氮唑、甲基苯并三氮唑、5-苯基四氮唑、苯并咪唑、1，2，4-三氮唑、3-氨基-1，2，4三氮唑和4-氨基-1，2，4三氮唑中的一种或几种。所述唑类化合物的质量百分比含量为0.001-1％，优选为0.01-0.3％。
其中，所述的络合剂为有机酸和氨基酸类化合物中的一种或几种。较佳为乙酸、丙二酸、丁二酸、柠檬酸、甘氨酸、脯氨酸、酪氨酸、谷氨酸、赖氨酸、精氨酸和酪氨酸中的一种或几种。所述络合剂的质量百分比含量为0.01-2％，优选为0.05-1％。
其中，所述的有机磷酸为羟基亚乙基二膦酸、氨基三亚甲基膦酸、乙二胺四亚甲基膦酸、二乙烯三胺五亚甲基膦酸、2-膦酸基丁烷-1，2，4-三膦酸或多氨基多醚基亚甲基膦酸等。所述有机磷酸的质量百分比含量为0.01-1.0％，优选为0.1-0.5％。
其中，所述的氧化剂为过氧化氢、过氧乙酸，过硫酸钾和过硫酸铵中的一种或几种。所述氧化剂的质量百分比含量为0.01-5％，优选为0.1-2％。
本发明中所述的化学机械抛光液的pH值为3-6，优选为4-6。
本发明的化学机械抛光液还可以包含pH调节剂和杀菌剂等其他本领域添加剂，余量为水。
本发明的化学机械抛光液可按下述方法制备：将除氧化剂以外的其他组分按比例混合均匀，用pH调节剂(如KOH或HNO3)调节到所需要的pH值，使用前加氧化剂，混合均匀即可。
本发明所用试剂及原料均市售可得。
本发明另一方面涉及所述化学机械抛光液在TSV和IC阻挡层的抛光应用，该抛光液对硅片表面具有很强的矫正能力，同时可抑制抛光过程中的局部和整体腐蚀。
本发明的技术效果在于：
1)本发明以氨基硅烷类偶联剂改性后的纳米颗粒作为研磨颗粒，使得该抛光液具有优良的二氧化硅去除速率，同时可以满足阻挡层抛光工艺中二氧 化硅(TEOS)、氮化硅、低介电材料(BD)、钽、钛、铜去除速率的要求。
2)本发明的抛光液可制成高浓缩产品，便于储存和运输。
具体实施方式
下面通过具体实施例进一步阐述本发明的优点，但本发明的保护范围不仅仅局限于下述实施例。通过将各成分简单均匀混合，余量为水。之后采用硝酸或氢氧化钾调节至合适pH，即可制得各实施例抛光液。下表1中的含量为质量百分比。
表1对比抛光液和本发明抛光液的组分和含量
Figure PCTCN2016111722-appb-000004
Figure PCTCN2016111722-appb-000005
效果实施例1
此实例中研究了上述组合物的抛光性能，将制得的组合物通过下述条件进行抛光，具体数据如表2：抛光条件：Mirra，抛光垫为IC1010抛光垫，向下压力为3.0psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为150ml/min，抛光时间为1min。
表2对比抛光液1和本发明抛光液1～13对二氧化硅(TEOS)、铜(Cu)、钽(Ta)、钛(Ti)、氮化硅(SiN)和低介电材料(BD)的去除速率
Figure PCTCN2016111722-appb-000006
Figure PCTCN2016111722-appb-000007
由表2可见，与对比抛光液1和对比抛光液2相比，本发明的抛光液可以获得较高的阻挡层钽、钛和二氧化硅(TEOS)的去除速率，同时获得较低的氮化硅的去除速率，保证抛光能较好的停止在氮化硅的表面。
且实施例中组合物7～11研磨颗粒含量较低，都可以制备高浓缩的抛光液，其具有优异的储存稳定性和抛光稳定性。
效果实施例2
此实例中研究了上述组合物在低压力下的抛光性能，将制得的组合物通过下述条件进行抛光，具体数据如表3：抛光条件：Mirra，抛光垫为Fujibo抛光垫，向下压力为1.5psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为150ml/min，抛光时间为1min。
表3对比抛光液和本发明抛光液1～6对二氧化硅(TEOS)、铜(Cu)、钽(Ta)、钛(Ti)、氮化硅(SiN)和低介电材料(BD)的去除速率
Figure PCTCN2016111722-appb-000008
由表3可见，与对比抛光液1和对比抛光液2相比，本发明的抛光液可以获得较高的阻挡层钽、钛和二氧化硅(TEOS)的去除速率，可以满足阻挡层抛光工艺中二氧化硅(TEOS)、氮化硅、低介电材料(BD)、钽、钛、铜去除速率的要求。
效果实施例3
采用对比抛光液1和抛光液1～2按照下述条件对TSV图形测试晶圆进行抛光。抛光条件：Mirra，抛光垫为IC1010抛光垫，向下压力为3.0psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为150ml/min，抛光时间为1min。
表4对比抛光液1和本发明抛光液1、2对TSV图形测试晶圆抛光后的矫正能力
Figure PCTCN2016111722-appb-000009
其中，表中Dishing，是指阻挡层抛光前在金属垫上的蝶形凹陷(埃)，
Figure PCTCN2016111722-appb-000010
是指抛光后的矫正能力值。
抛光结果如表4所示：本发明的抛光液和对比抛光液相比，能较好的修正前程在晶圆上产生的蝶形凹陷，获得了较好的晶圆形貌。
效果实施例4
采用对比抛光液1和抛光液1～2按照下述条件对带有图案的铜晶片进行抛光。抛光条件：Mirra，抛光垫为Fujibo抛光垫，向下压力为1.5psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为150ml/min，抛光时间为1min。
表5对比抛光液1和本发明抛光液1、2对带有图案的铜晶片抛光后的矫正能力对比
Figure PCTCN2016111722-appb-000011
其中，表中Dishing，是指阻挡层抛光前在金属垫上的蝶形凹陷(埃)，Erosion是指阻挡层在细线区域(50％line)上的侵蚀(埃)，
Figure PCTCN2016111722-appb-000012
是指抛光后的矫正能力值。
由表5可以看出，与对比抛光液1相比，本发明的抛光液能较好的修正 前程在晶圆上产生的蝶形凹陷和侵蚀，获得了较好的晶圆形貌。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。

Claims (26)

  1. 一种化学机械抛光液，含有研磨颗粒，氨基硅烷偶联剂，唑类化合物，络合剂，有机磷酸，氧化剂和水。
  2. 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒为纳米二氧化硅。
  3. 如权利要求2所述的化学机械抛光液，其中，所述纳米二氧化硅粒径为20-200nm。
  4. 如权利要求2所述的化学机械抛光液，其中，所述纳米二氧化硅粒径为30-150nm。
  5. 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒的质量百分比含量为0.5-30％。
  6. 如权利要求5所述的化学机械抛光液，其特征在于，所述研磨颗粒的质量百分比含量为2-20％。
  7. 如权利要求1所述的化学机械抛光液，其特征在于，所述氨基硅烷偶联剂结构式为：
    Figure PCTCN2016111722-appb-100001
    其中，n＝1～12，
    Figure PCTCN2016111722-appb-100002
    (x＝0，1；y＝0～11)
    R3，R4，R5，R6＝H，
    Figure PCTCN2016111722-appb-100003
    (z＝0～～11)
  8. 如权利要求7所述的化学机械抛光液，其特征在于，所述氨基硅烷偶联剂为氨乙基甲基二乙氧基硅烷、氨乙基甲基二甲氧基硅烷、氨乙基二甲基甲氧基硅烷、氨丙基甲基二乙氧基硅烷、氨丙基甲基二甲氧基硅烷、氨丙基二甲基甲氧基硅烷或氨丙基三甲氧基硅烷。
  9. 如权利要求1所述的化学机械抛光液，其特征在于，所述氨基硅烷偶联剂的质量百分比含量为0.005-0.3％。
  10. 如权利要求9所述的化学机械抛光液，其特征在于，所述氨基硅烷偶联剂 的质量百分比含量为0.01-0.2％。
  11. 如权利要求1所述的化学机械抛光液，其特征在于，所述唑类化合物为苯并三氮唑、甲基苯并三氮唑、5-苯基四氮唑、苯并咪唑、1，2，4-三氮唑、3-氨基-1，2，4三氮唑和4-氨基-1，2，4三氮唑中的一种或几种。
  12. 如权利要求1所述的化学机械抛光液，其特征在于，所述唑类化合物的质量百分比含量为0.001％-1％。
  13. 如权利要求12所述的化学机械抛光液，其特征在于，所述唑类化合物的质量百分比含量为0.01％-0.3％。
  14. 如权利要求1所述的化学机械抛光液，其特征在于，所述络合剂为有机酸和氨基酸类化合物中的一种或几种。
  15. 如权利要求14所述的化学机械抛光液，其中，所述有机酸为乙酸、丙二酸、丁二酸、柠檬酸中的一种或几种；所述氨基酸类化合物为甘氨酸、脯氨酸、酪氨酸、谷氨酸、赖氨酸、精氨酸、酪氨酸中的一种或几种。
  16. 如权利要求1所述的化学机械抛光液，其特征在于，所述络合剂的质量百分比含量为0.01-2％。
  17. 如权利要求16所述的化学机械抛光液，其特征在于，所述络合剂的质量百分比含量为0.05-1％。
  18. 如权利要求1所述的化学机械抛光液，其特征在于，所述有机磷酸为羟基亚乙基二膦酸、氨基三亚甲基膦酸、乙二胺四亚甲基膦酸、二乙烯三胺五亚甲基膦酸、2-膦酸基丁烷-1，2，4-三膦酸或多氨基多醚基亚甲基膦酸。
  19. 如权利要求1所述的化学机械抛光液，其特征在于，所述有机磷酸的质量百分比含量为0.01-1％。
  20. 如权利要求19所述的化学机械抛光液，其特征在于，所述有机磷酸的质量百分比含量为0.1-0.5％。
  21. 如权利要求1所述的化学机械抛光液，其特征在于，所述氧化剂为过氧化氢，过氧乙酸，过硫酸钾和过硫酸铵中的一种或几种。
  22. 如权利要求1所述的化学机械抛光液，其特征在于，所述氧化剂的质量百 分比含量为0.01-5％。
  23. 如权利要求22所述的化学机械抛光液，其特征在于，所述氧化剂的质量百分比含量为0.1-2％。
  24. 如权利要求1所述的化学机械抛光液，其特征在于，所述抛光液的pH值为3-6。
  25. 如权利要求24所述的化学机械抛光液，其特征在于，所述抛光液的pH值为4-6。
  26. 一种如权利要求1-25任一项所述的化学机械抛光液在抛光TSV和IC阻挡层的应用。
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