TWI721074B - 一種化學機械拋光液及其應用 - Google Patents
一種化學機械拋光液及其應用 Download PDFInfo
- Publication number
- TWI721074B TWI721074B TW105143243A TW105143243A TWI721074B TW I721074 B TWI721074 B TW I721074B TW 105143243 A TW105143243 A TW 105143243A TW 105143243 A TW105143243 A TW 105143243A TW I721074 B TWI721074 B TW I721074B
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- TW
- Taiwan
- Prior art keywords
- polishing liquid
- chemical mechanical
- mechanical polishing
- acid
- polishing
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 121
- 239000000126 substance Substances 0.000 title claims abstract description 31
- 239000002002 slurry Substances 0.000 title abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 13
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007822 coupling agent Substances 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 239000008139 complexing agent Substances 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- -1 azole compound Chemical class 0.000 claims description 13
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 4
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 claims description 4
- 235000001014 amino acid Nutrition 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 claims description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
- WWFAABCJPAUPDW-UHFFFAOYSA-N 2-[diethoxy(methyl)silyl]ethanamine Chemical group CCO[Si](C)(CCN)OCC WWFAABCJPAUPDW-UHFFFAOYSA-N 0.000 claims description 2
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims description 2
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 claims description 2
- MCLXOMWIZZCOCA-UHFFFAOYSA-N 3-[methoxy(dimethyl)silyl]propan-1-amine Chemical compound CO[Si](C)(C)CCCN MCLXOMWIZZCOCA-UHFFFAOYSA-N 0.000 claims description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- 229940120146 EDTMP Drugs 0.000 claims description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004471 Glycine Substances 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 229940090960 diethylenetriamine pentamethylene phosphonic acid Drugs 0.000 claims description 2
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
- 239000004220 glutamic acid Substances 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 claims 1
- NNKQKZGTQJVAHJ-UHFFFAOYSA-N (ethyl-methoxy-methylsilyl)oxymethanamine Chemical compound NCO[Si](OC)(CC)C NNKQKZGTQJVAHJ-UHFFFAOYSA-N 0.000 claims 1
- ZFVKQNLHQANREL-UHFFFAOYSA-N 1,2,4-triphosphonobutan-2-ylphosphonic acid Chemical compound P(=O)(O)(O)C(CP(O)(=O)O)(CCP(O)(=O)O)P(O)(=O)O ZFVKQNLHQANREL-UHFFFAOYSA-N 0.000 claims 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 claims 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims 1
- 239000006087 Silane Coupling Agent Substances 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 150000003852 triazoles Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 238000007517 polishing process Methods 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- 150000003851 azoles Chemical class 0.000 abstract 2
- 239000012141 concentrate Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000010949 copper Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- WYSLNZFYLKMSNB-UHFFFAOYSA-N 1,4-diphosphonobutan-2-ylphosphonic acid Chemical compound C(C(CCP(O)(=O)O)P(O)(=O)O)P(O)(=O)O WYSLNZFYLKMSNB-UHFFFAOYSA-N 0.000 description 1
- CZVSRHMBQDVNLW-UHFFFAOYSA-N 2-[dimethoxy(methyl)silyl]ethanamine Chemical compound CO[Si](C)(OC)CCN CZVSRHMBQDVNLW-UHFFFAOYSA-N 0.000 description 1
- PYTNYCJPQQTENF-UHFFFAOYSA-N 2-[methoxy(dimethyl)silyl]ethanamine Chemical compound CO[Si](C)(C)CCN PYTNYCJPQQTENF-UHFFFAOYSA-N 0.000 description 1
- HNBTUMKUMQFJSZ-UHFFFAOYSA-N [Si]=O.[Cu] Chemical compound [Si]=O.[Cu] HNBTUMKUMQFJSZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000004714 phosphonium salts Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明公開了一種高濃縮的化學機械拋光液及其應用，該拋光液包含：(a)研磨顆粒(b)氨基矽烷偶聯劑(c)唑類化合物(d)絡合劑(e)有機膦酸(f)氧化劑(g)水。本發明的化學機械拋光液用於TSV和IC阻擋層拋光，可以滿足各種材料的拋光速率和選擇比要求；該拋光液對矽片器件表面有很強的矯正能力，能實現快速平坦化，且可防止金屬拋光過程中產生的局部和整體腐蝕，提高工作效率，降低生產成本。
Description
本發明涉及一種用於TSV和IC阻擋層拋光的化學機械拋光液。
在集成電路(IC)的製造過程中，矽晶圓基板上往往構建了成千上萬的結構單元，這些結構單元通過多層金屬互連進一步形成功能性電路和元器件。在多層金屬互連結構中，金屬導線之間填充二氧化矽或摻雜其他元素的二氧化矽作為層間介電質(ILD)。隨著集成電路金屬互連技術的發展和佈線層數的增加，化學機械拋光(CMP)已經廣泛應用於晶片製造過程中的表面平坦化。這些平坦化的晶片表面有助於多層集成電路的生產，且防止將電介層塗覆在不平表面上引起的畸變。 CMP製程就是使用一種含磨料的混合物和拋光墊拋光積體電路表面。在典型的化學機械拋光方法中，將基板直接與旋轉拋光墊接觸，用一載重物在基板背面施加壓力。在拋光期間，墊片和操作臺旋轉，同時在基板背面保持向下的力，將磨料和化學活性溶液（通常稱為拋光液或拋光漿料）塗於墊片上，該拋光液與正在拋光的薄膜發生化學反應開始進行拋光過程。 二氧化矽作為集成電路中常用的介電材料，在很多拋光製程中都會涉及二氧化矽介電層的去除。如在氧化物層間介質拋光過程中，拋光漿料主要用於去除氧化物介電層並平坦化；在淺溝槽隔離層拋光時，拋光液主要用於去除以及平坦化氧化物介電層並停在氮化矽上；在阻擋層拋光中，拋光液需要去除二氧化矽，銅和阻擋層；在矽通孔（TSV）製程，通孔的形成也需要用拋光液去除多餘的二氧化矽。在這些拋光製程中，都要求較高的氧化物介電層的去除速率以保證產能。為了達到較高的氧化物材料去除速率，通常通過提高研磨顆粒的用量來達到，這樣做會提高拋光液的成本，而且研磨顆粒用量的增大不利於濃縮。現有技術WO2010033156A2中使用了季銨鹽，季膦鹽，氨基矽烷類化合物以提高拋光過程中二氧化矽材料的去除速率。 在CMP過程中除了要嚴格控制表面污染物以及杜絕金屬腐蝕外，還要具有較低的碟形凹陷和拋光均一性才能保證更加可靠的電性能，特別是阻擋層的平坦化過程中需要在更短的時間和更低的壓力下快速移除阻擋層金屬。本專利旨在提供一種高濃縮的適合於TSV和氧化矽-銅互連製程中的阻擋層拋光液，其在較溫和的條件下具有高的阻擋層去除速率，並能很好的抑制碟形凹陷，金屬腐蝕和表面缺陷。
本發明提供了一種化學機械拋光液，所述拋光液含有研磨顆粒，氨基矽烷偶聯劑，唑類化合物，絡合劑，有機膦酸，氧化劑和水。 本發明的化學機械拋光液，其中，所述的研磨顆粒為奈米二氧化矽顆粒，質量百分比含量為0.5-30%，優選為2-20%; 粒徑為20-200nm，優選為30-150nm。 本發明的化學機械拋光液，所述的氨基矽烷偶聯劑結構式為：
n=1~12, R1, R2=
(x=0, 1; y=0~11) R3, R4, R5, R6=H,
(z=0~11) 其中，所述氨基矽烷偶聯劑為氨乙基甲基二乙氧基矽烷、氨乙基甲基二甲氧基矽烷、氨乙基二甲基甲氧基矽烷、氨丙基甲基二乙氧基矽烷、氨丙基甲基二甲氧基矽烷、氨丙基二甲基甲氧基矽烷或氨丙基三甲氧基矽烷。上述氨基矽烷偶聯劑的質量百分比含量為0.005-0.3%，優選為0.01-0.2%。 其中，所述的唑類化合物可為苯並三氮唑、甲基苯並三氮唑、5-苯基四氮唑、苯並咪唑、1,2,4-三氮唑、3-氨基-1,2,4三氮唑和4-氨基-1,2,4三氮唑中的一種或幾種。所述唑類化合物的質量百分比含量為0.001-1%，優選為0.01-0.3%。 其中，所述的絡合劑為有機酸和氨基酸類化合物中的一種或幾種。較佳為乙酸、丙二酸、丁二酸、檸檬酸、甘氨酸、脯氨酸、酪氨酸、谷氨酸、賴氨酸、精氨酸和酪氨酸中的一種或幾種。所述絡合劑的質量百分比含量為0.01-2%，優選為0.05-1%。 其中，所述的有機膦酸為羥基亞乙基二膦酸、氨基三亞甲基膦酸、乙二胺四亞甲基膦酸、二乙烯三胺五亞甲基膦酸、2-膦酸基丁烷-1,2,4-三膦酸或多氨基多醚基亞甲基膦酸等。所述有機磷酸的質量百分比含量為0.01-1.0%，優選為0.1-0.5%。 其中，所述的氧化劑為過氧化氫、過氧乙酸，過硫酸鉀和過硫酸銨中的一種或幾種。所述氧化劑的質量百分比含量為0.01-5%，優選為0.1-2%。 本發明中所述的化學機械拋光液的pH值為3-6，優選為4-6。 本發明的化學機械拋光液還可以包含pH調節劑和殺菌劑等其他本領域添加劑，餘量為水。 本發明的化學機械拋光液可按下述方法製備：將除氧化劑以外的其他組分按比例混合均勻，用pH調節劑（如KOH或HNO3）調節到所需要的pH值，使用前加氧化劑，混合均勻即可。 本發明所用試劑及原料均市售可得。 本發明另一方面涉及所述化學機械拋光液在TSV和IC阻擋層的拋光應用，該拋光液對矽片表面具有很強的矯正能力，同時可抑制拋光過程中的局部和整體腐蝕。 本發明的技術效果在於： 1)本發明以氨基矽烷類偶聯劑改性後的奈米顆粒作為研磨顆粒，使得該拋光液具有優良的二氧化矽去除速率，同時可以滿足阻擋層拋光製程中二氧化矽（TEOS）、氮化矽、低介電材料（BD）、鉭、鈦、銅去除速率的要求。 2)本發明的拋光液可製成高濃縮產品，便於儲存和運輸。
下面通過具體實施例進一步闡述本發明的優點，但本發明的保護範圍不僅僅局限於下述實施例。通過將各成分簡單均勻混合，餘量為水。之後採用硝酸或氫氧化鉀調節至合適pH，即可製得各實施例拋光液。下表1中的含量為質量百分比。 表1 對比拋光液和本發明拋光液的組分和含量 
效果實施例1 此實例中研究了上述組合物的拋光性能，將制得的組合物通過下述條件進行拋光，具體數據如表2：拋光條件：Mirra，拋光墊為IC1010拋光墊，向下壓力為3.0psi，轉速為拋光盤/拋光頭=93/87rpm，拋光液流速為150ml/min，拋光時間為1min。 表2 對比拋光液1~2和本發明拋光液1~13對二氧化矽（TEOS）、銅(Cu)、 鉭（Ta）、鈦（Ti）、氮化矽（SiN）和低介電材料（BD）的去除速率 
由表2可見，與對比拋光液1和對比拋光液2相比，本發明的拋光液可以獲得較高的阻擋層鉭、鈦和二氧化矽（TEOS）的去除速率，同時獲得較低的氮化矽的去除速率，保證拋光能較好的停止在氮化矽的表面。 且實施例中組合物7~11研磨顆粒含量較低，都可以製備高濃縮的拋光液，其具有優異的儲存穩定性和拋光穩定性。 效果實施例2 此實例中研究了上述組合物在低壓力下的拋光性能，將制得的組合物通過下述條件進行拋光，具體數據如表3：拋光條件：Mirra，拋光墊為Fujibo拋光墊，向下壓力為1.5psi，轉速為拋光盤/拋光頭=93/87rpm，拋光液流速為150ml/min，拋光時間為1min。 表3 對比拋光液1~2和本發明拋光液1~6對二氧化矽（TEOS）、銅(Cu)、 鉭（Ta）、鈦（Ti）、氮化矽（SiN）和低介電材料（BD）的去除速率 
由表3可見，與對比拋光液1和對比拋光液2相比，本發明的拋光液可以獲得較高的阻擋層鉭、鈦和二氧化矽（TEOS）的去除速率，可以滿足阻擋層拋光製程中二氧化矽（TEOS）、氮化矽、低介電材料（BD）、鉭、鈦、銅去除速率的要求。 效果實施例3 採用對比拋光液1和拋光液1～2按照下述條件對TSV圖形測試晶圓進行拋光。拋光條件：Mirra，拋光墊為IC1010拋光墊，向下壓力為3.0psi，轉速為拋光盤/拋光頭=93/87rpm，拋光液流速為150ml/min，拋光時間為1min。 表4 對比拋光液1和本發明拋光液1、2對TSV圖形測試晶圓拋光後的矯正能力 
其中，表中Dishing，是指阻擋層拋光前在金屬墊上的碟形凹陷（埃），∆(Å)是指拋光後的矯正能力值。 拋光結果如表4所示：本發明的拋光液和對比拋光液相比，能較好的修正先前製程在晶圓上產生的碟形凹陷，獲得了較好的晶圓形貌。 效果實施例4 採用對比拋光液1和拋光液1～2按照下述條件對帶有圖案的銅晶片進行拋光。拋光條件: Mirra，拋光墊為Fujibo拋光墊，向下壓力為1.5psi，轉速為拋光盤/拋光頭=93/87rpm，拋光液流速為150ml/min，拋光時間為1min。 表5 對比拋光液1和本發明拋光液1、2對帶有圖案 的銅晶片拋光後的矯正能力對比 
其中，表中Dishing，是指阻擋層拋光前在金屬墊上的碟形凹陷（埃），Erosion是指阻擋層在細線區域（50%line）上的侵蝕（埃），∆(Å)是指拋光後的矯正能力值。 由表5可以看出，與對比拋光液1相比，本發明的拋光液能較好的修正先前製程在晶圓上產生的碟形凹陷和侵蝕，獲得了較好的晶圓形貌。 以上對本發明的具體實施例進行了詳細描述，但其只是作為範例，本發明並不限制於以上描述的具體實施例。對於本領域技術人員而言，任何對本發明進行的等同修改和替代也都在本發明的範疇之中。因此，在不脫離本發明的精神和範圍下所作的均等變換和修改，都應涵蓋在本發明的範圍內。
Claims (18)
- 一種化學機械拋光液，含有研磨顆粒，氨基矽烷偶聯劑，唑類化合物，絡合劑，有機膦酸，氧化劑和水；所述研磨顆粒為奈米二氧化矽；所述奈米二氧化矽粒徑為20-200nm；所述研磨顆粒的質量百分比含量為0.5-30%；所述氨基矽烷偶聯劑的質量百分比含量為0.005-0.3%；所述唑類化合物的質量百分比含量為0.001%-1%；所述絡合劑的質量百分比含量為0.01-2%；所述有機膦酸的質量百分比含量為0.01-1%；所述氧化劑的質量百分比含量為0.01-5%。
- 如請求項1之化學機械拋光液，其中，所述奈米二氧化矽粒徑為30-150nm。
- 如請求項1之化學機械拋光液，其中，所述研磨顆粒的質量百分比含量為2-20%。
- 如請求項1之化學機械拋光液，其中，所述氨基矽烷偶聯劑結構式為：
(x=0,1；y=0~11) R3,R4,R5,R6=H,
(z=0~11)
- 如請求項4之化學機械拋光液，其中，所述氨基矽烷偶聯劑為氨乙基甲基二乙氧基矽烷、氨乙基甲基二甲氧基矽烷、氨乙基二甲基甲氧基矽烷、氨丙基甲 基二乙氧基矽烷、氨丙基甲基二甲氧基矽烷、氨丙基二甲基甲氧基矽烷或氨丙基三甲氧基矽烷。
- 如請求項1之化學機械拋光液，其中，所述氨基矽烷偶聯劑的質量百分比含量為0.01-0.2%。
- 如請求項1之化學機械拋光液，其中，所述唑類化合物為苯並三氮唑、甲基苯並三氮唑、5-苯基四氮唑、苯並咪唑、1,2,4-三氮唑、3-氨基-1,2,4三氮唑和4-氨基-1,2,4三氮唑中的一種或幾種。
- 如請求項1之化學機械拋光液，其中，所述唑類化合物的質量百分比含量為0.01%-0.3%。
- 如請求項1之化學機械拋光液，其中，所述絡合劑為有機酸和氨基酸類化合物中的一種或幾種。
- 如請求項9之化學機械拋光液，其中，所述有機酸為乙酸、丙二酸、丁二酸、檸檬酸中的一種或幾種；所述氨基酸類化合物為甘氨酸、脯氨酸、酪氨酸、谷氨酸、賴氨酸、精氨酸、酪氨酸中的一種或幾種。
- 如請求項1之化學機械拋光液，其中，所述絡合劑的質量百分比含量為0.05-1%。
- 如請求項1之化學機械拋光液，其中，所述有機膦酸為羥基亞乙基二膦酸、 氨基三亞甲基膦酸、乙二胺四亞甲基膦酸、二乙烯三胺五亞甲基膦酸、2-膦酸基丁烷-1,2,4-三膦酸或多氨基多醚基亞甲基膦酸。
- 如請求項1之化學機械拋光液，其中，所述有機膦酸的質量百分比含量為0.1-0.5%。
- 如請求項1之化學機械拋光液，其中，所述氧化劑為過氧化氫，過氧乙酸，過硫酸鉀和過硫酸銨中的一種或幾種。
- 如請求項1之化學機械拋光液，其中，所述氧化劑的質量百分比含量為0.1-2%。
- 如請求項1之化學機械拋光液，其中，所述拋光液的pH值為3-6。
- 如請求項16之化學機械拋光液，其中，所述拋光液的pH值為4-6。
- 一種如請求項1-17任一項之化學機械拋光液在拋光TSV和IC阻擋層的應用。
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| KR102410845B1 (ko) * | 2021-01-08 | 2022-06-22 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
| KR20220149148A (ko) * | 2021-04-30 | 2022-11-08 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법 |
| CN114133876B (zh) * | 2021-11-04 | 2022-12-20 | 西安蓝桥新能源科技有限公司 | 一种小塔基硅片碱抛光辅助剂及其应用 |
| KR20230172348A (ko) * | 2022-06-15 | 2023-12-22 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101802116A (zh) * | 2007-09-21 | 2010-08-11 | 卡伯特微电子公司 | 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| CN104263248A (zh) * | 2014-09-26 | 2015-01-07 | 深圳市力合材料有限公司 | 一种适用于低下压力的弱酸性铜抛光液 |
| CN104334674A (zh) * | 2012-05-22 | 2015-02-04 | 嘉柏微电子材料股份公司 | 包含氧化锆颗粒的cmp组合物及使用方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1955249B (zh) * | 2005-10-28 | 2012-07-25 | 安集微电子（上海）有限公司 | 用于钽阻挡层的化学机械抛光浆料 |
| JP5178121B2 (ja) * | 2007-09-28 | 2013-04-10 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| CN102477262B (zh) * | 2010-11-30 | 2015-01-28 | 安集微电子（上海）有限公司 | 一种化学机械抛光浆料 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| CN104371551B (zh) * | 2013-08-14 | 2018-01-12 | 安集微电子（上海）有限公司 | 一种碱性阻挡层化学机械抛光液 |
| CN104371549A (zh) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | 一种用于抛光低介电材料的化学机械抛光液 |
-
2015
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-
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101802116A (zh) * | 2007-09-21 | 2010-08-11 | 卡伯特微电子公司 | 利用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| CN104334674A (zh) * | 2012-05-22 | 2015-02-04 | 嘉柏微电子材料股份公司 | 包含氧化锆颗粒的cmp组合物及使用方法 |
| CN104263248A (zh) * | 2014-09-26 | 2015-01-07 | 深圳市力合材料有限公司 | 一种适用于低下压力的弱酸性铜抛光液 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017114309A1 (zh) | 2017-07-06 |
| TW201723139A (zh) | 2017-07-01 |
| US20190062594A1 (en) | 2019-02-28 |
| CN106928859A (zh) | 2017-07-07 |
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