WO2017020534A1 - Silver/aluminium alloy crystal oscillation plate coating process - Google Patents
Silver/aluminium alloy crystal oscillation plate coating process Download PDFInfo
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- WO2017020534A1 WO2017020534A1 PCT/CN2016/000421 CN2016000421W WO2017020534A1 WO 2017020534 A1 WO2017020534 A1 WO 2017020534A1 CN 2016000421 W CN2016000421 W CN 2016000421W WO 2017020534 A1 WO2017020534 A1 WO 2017020534A1
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- Prior art keywords
- silver
- aluminum
- target
- quartz plate
- aluminum alloy
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- 239000004332 silver Substances 0.000 title claims abstract description 45
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 41
- 238000000576 coating method Methods 0.000 title claims abstract description 31
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 229910001316 Ag alloy Inorganic materials 0.000 title abstract description 12
- 230000010355 oscillation Effects 0.000 title abstract 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 46
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010453 quartz Substances 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052709 silver Inorganic materials 0.000 claims abstract description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 42
- -1 silver aluminum Chemical compound 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 6
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 239000012467 final product Substances 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 27
- 150000002500 ions Chemical class 0.000 description 8
- 230000005684 electric field Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 241000120551 Heliconiinae Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002180 anti-stress Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Definitions
- the invention relates to a coating process, in particular to an alloy coating process of a silver-aluminum alloy crystal oscillator.
- a metal conductive film layer is plated on the quartz plate.
- the material used as the metal conductive film layer is mainly gold, silver, aluminum and copper.
- the crystal plate using aluminum as the conductive layer has the best stress resistance effect, but the aluminum material is too Soft, scratch-resistant and oxidized, and compared to gold, silver and copper, aluminum has a high impedance and low electrical conductivity and thermal conductivity.
- silver-aluminum alloy not only improves the anti-stress effect of the crystal oscillator, but also overcomes the disadvantages of high impedance, low electrical conductivity and thermal conductivity in the aluminum crystal oscillator.
- the traditional silver-aluminum alloy coating process is to deposit silver and aluminum in a molybdenum boat or crucible in a vacuum atmosphere in a vacuum environment on a quartz plate.
- the specific process is as follows: when vapor deposition, the quartz plate is placed in a vacuum chamber fixture. Above, the silver and aluminum alloy materials are placed on the boat or the crucible according to the weight ratio; the boat or the crucible of silver or aluminum alloy material is heated under vacuum, and the silver and aluminum alloy materials are plated on one side of the quartz plate to form an alloy. After the film, the jig was flipped and the silver and aluminum alloy materials were plated to the other side of the quartz plate in the same manner.
- the proportion of components evaporating from silver and aluminum in the above vapor deposition process is difficult to control, and thus the content ratio of silver and aluminum alloy on the quartz plate often does not reach a predetermined value, so that the performance of silver and aluminum alloy does not meet the required requirements.
- the present invention provides an alloy plating process for a silver-aluminum alloy crystal oscillator, which can precisely control the composition ratio of silver and aluminum in the silver-aluminum alloy film.
- Step one preparing an aluminum target, a silver target, and a quartz piece to be coated.
- Step two placing an aluminum target, a silver target and a quartz plate in a magnetron sputtering coating device, wherein the coating working area in the magnetron sputtering coating device is filled with high purity argon gas, and the magnetron sputtering
- the coating apparatus includes an ion emitting device for emitting high energy particles and a conveying device for moving the quartz sheet,
- the magnetron sputtering coating device is activated, and the bombardment of the high-energy particles is performed by the ion-emitting device, so that the aluminum target is sputtered to deposit aluminum atoms on the quartz plate, and the quartz plate is coated with a layer of aluminum having a thickness D. membrane,
- Step 4 after the aluminum film is plated to a certain thickness, the ion emitting device stops emitting, and the quartz plate is moved to a working position opposite to the silver target by the conveying device, and the temperature of the quartz plate is kept within a certain range and cannot be cooled.
- Step six take out the finished product inspection and storage.
- An ion emitting device, an aluminum target, and a silver target are disposed on both sides of the quartz plate. After the magnetron sputtering coating device is activated, a silver-aluminum alloy film can be plated on both sides of the quartz plate at the same time.
- the temperature in the step 4 is: 200-550 degrees.
- the range of X is: 5-20
- the beneficial effects of the invention are that the silver-aluminum alloy film formed on the quartz plate by the process not only firmly bonds with the quartz plate, but also can accurately control the composition ratio of silver and aluminum in the silver-aluminum alloy film, and thus, the final finished silver-aluminum alloy crystal oscillator piece Based on the basic requirements of the application, we can achieve the settings we need, with the heat dissipation, conductivity, low impedance, and hardness we need.
- Fig. 1 is a schematic view showing the structure of one of the products of the silver-aluminum alloy crystal oscillator of the present invention.
- the present invention discloses a silver aluminum alloy crystal oscillator plate coating process, comprising the following steps:
- Step one preparing an aluminum target, a silver target, and a quartz piece to be coated.
- the aluminum target and the silver target must be pure aluminum or pure silver, and the mixed metal cannot be used as a target.
- Step two placing an aluminum target, a silver target and a quartz plate in a magnetron sputtering coating device, wherein the coating working area in the magnetron sputtering coating device is filled with high purity argon gas, and the magnetron sputtering
- the coating device includes an ion emitting device for emitting high-energy particles and a conveying device for moving the quartz plate, and the magnetron sputtering coating device is an outsourced device, and the structure thereof is not detailed.
- both sides of the quartz plate are provided with an ion emitting device, an aluminum target and a silver target, so that after the magnetron sputtering coating device is activated, a silver-aluminum alloy film can be simultaneously plated on both sides of the quartz plate. higher efficiency.
- the high-energy particles are electrons, and under the action of the electric field, they collide with the argon atoms during the flying out process to ionize to generate argon ions and new electrons; the argon ions accelerate under the action of the electric field.
- the cathode target in this example, is an aluminum target and a silver target, and the target surface is bombarded with high energy to cause the target to be sputtered.
- a neutral target atom is deposited on the quartz plate to form a thin film, and the generated secondary electrons are subjected to an electric field and a magnetic field, are bound in a plasma region close to the target surface, and are ionized in the region.
- a large amount of argon ions are used to bombard the target, thereby achieving a high deposition rate.
- the energy of the secondary electrons is exhausted, gradually away from the target surface, and finally deposited on the quartz plate under the action of the electric field. Since the energy of the electron is very low, the energy transmitted to the quartz plate is small. This causes the quartz plate to have a lower temperature rise and thus does not cause the aluminum having a lower melting point to form a crater on the quartz plate.
- the magnetron sputtering coating device is started, and the bombardment of the high-energy particles is performed by the ion-emitting device, so that the aluminum target is sputtered and the aluminum atoms are deposited on the quartz plate.
- the quartz plate is coated with a layer of aluminum having a thickness D. Membrane, in this case, it is necessary to first plate the aluminum film on the quartz plate because the bonding force between the aluminum and the quartz plate is the best.
- Step 4 after the aluminum film is plated to a certain thickness, the ion emitting device stops emitting, and the quartz plate is moved to a working position opposite to the silver target by the conveying device, and the temperature of the quartz plate is kept within a certain range and cannot be cooled. 200-550 degrees, in this temperature range, silver has a good fusion with the aluminum film, so in the subsequent steps can form a uniform silver aluminum Alloy film,
- the key factor of the performance of the aluminum alloy film, in this ratio, not only meets the basic requirements of use, but also ensures that the performance of the silver-aluminum alloy crystal oscillator can achieve the required settings, with the required heat dissipation, conductivity, and Small impedance, and hardness, if the proportion of silver is too low, it will not reach the basic requirements of heat dissipation, electrical conductivity, small impedance, and certain hardness, and it is easy to indent or during detection and use.
- Step six take out the finished product inspection and storage.
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Provided is a silver/aluminium alloy crystal oscillation plate alloy coating process. A silver/aluminium alloy film formed on a quartz plate in the process is firmly combined with the quartz plate, and the compositional proportions of the silver and aluminium in the silver/aluminium alloy film can be accurately controlled. Therefore, various properties of the final product silver/aluminium alloy crystal oscillation plate achieve required settings on the basis of satisfying basic usage requirements, the final product silver/aluminium alloy crystal oscillation plate having the required heat dissipation and conductivity, and relatively low impedance and hardness.
Description
本发明涉及一种镀膜工艺，特别是一种银铝合金晶振片的合金镀膜工艺。The invention relates to a coating process, in particular to an alloy coating process of a silver-aluminum alloy crystal oscillator.
在石英片上镀上金属导电膜层，用作金属导电膜层的材料主要是金、银、铝和铜，用铝作导电层的晶振片具有最好的抗应力效果，但是铝这种材质过于柔软，易刮伤和氧化，而且对比金、银和铜，铝的阻抗大，其导电率和热导率都较低。A metal conductive film layer is plated on the quartz plate. The material used as the metal conductive film layer is mainly gold, silver, aluminum and copper. The crystal plate using aluminum as the conductive layer has the best stress resistance effect, but the aluminum material is too Soft, scratch-resistant and oxidized, and compared to gold, silver and copper, aluminum has a high impedance and low electrical conductivity and thermal conductivity.
采用银铝合金既提高了晶振片的抗应力效果，又克服了铝晶振片中阻抗较大，电导率和热导率都较低的不足，The use of silver-aluminum alloy not only improves the anti-stress effect of the crystal oscillator, but also overcomes the disadvantages of high impedance, low electrical conductivity and thermal conductivity in the aluminum crystal oscillator.
传统的银铝合金镀膜工艺是把银和铝按一定比例放在钼舟或坩埚中加热在真空环境中蒸镀在石英片上，具体过程如下：蒸镀时，将石英片置于真空室的夹具上面，按重量配比将银、铝合金材料放置于舟或坩埚上；在真空状态下加热放置银、铝合金材料的舟或坩埚，将银、铝合金材料镀在石英片的一面上形成合金膜后，翻转夹具，采用相同的方式将银、铝合金材料镀至石英片的另一面上。上述蒸镀过程中银、铝蒸发出来的成分比例很难控制，因而石英片上的银、铝合金的含量比经常达不到预定值，从而导致银、铝合金的性能达不到需要的要求。
The traditional silver-aluminum alloy coating process is to deposit silver and aluminum in a molybdenum boat or crucible in a vacuum atmosphere in a vacuum environment on a quartz plate. The specific process is as follows: when vapor deposition, the quartz plate is placed in a vacuum chamber fixture. Above, the silver and aluminum alloy materials are placed on the boat or the crucible according to the weight ratio; the boat or the crucible of silver or aluminum alloy material is heated under vacuum, and the silver and aluminum alloy materials are plated on one side of the quartz plate to form an alloy. After the film, the jig was flipped and the silver and aluminum alloy materials were plated to the other side of the quartz plate in the same manner. The proportion of components evaporating from silver and aluminum in the above vapor deposition process is difficult to control, and thus the content ratio of silver and aluminum alloy on the quartz plate often does not reach a predetermined value, so that the performance of silver and aluminum alloy does not meet the required requirements.
发明内容Summary of the invention
为了克服现有技术的不足，本发明提供一种银铝合金晶振片的合金镀膜工艺，可以精确控制银铝合金膜中银和铝的成分比例。In order to overcome the deficiencies of the prior art, the present invention provides an alloy plating process for a silver-aluminum alloy crystal oscillator, which can precisely control the composition ratio of silver and aluminum in the silver-aluminum alloy film.
本发明解决其技术问题所采用的技术方案是：The technical solution adopted by the present invention to solve the technical problem thereof is:
一种银铝合金晶振片镀膜工艺，其特征在于：包括以下步骤：A silver aluminum alloy crystal plate coating process characterized by comprising the following steps:
步骤一，准备铝材靶、银材靶及需要镀膜的石英片，Step one, preparing an aluminum target, a silver target, and a quartz piece to be coated.
步骤二，将铝材靶、银材靶及石英片放置于磁控溅射镀膜设备中，所述磁控溅射镀膜设备中的镀膜工作区域充有高纯度氩气，且本磁控溅射镀膜设备包括用于发射高能粒子的离子发射装置和用于移动石英片的传送装置，Step two, placing an aluminum target, a silver target and a quartz plate in a magnetron sputtering coating device, wherein the coating working area in the magnetron sputtering coating device is filled with high purity argon gas, and the magnetron sputtering The coating apparatus includes an ion emitting device for emitting high energy particles and a conveying device for moving the quartz sheet,
步骤三，启动磁控溅射镀膜设备，通过离子发射装置发射高能粒子的轰击，使铝材靶发生溅射而使铝原子沉积在石英片上，而在石英片上镀上一层厚度为D的铝膜，In the third step, the magnetron sputtering coating device is activated, and the bombardment of the high-energy particles is performed by the ion-emitting device, so that the aluminum target is sputtered to deposit aluminum atoms on the quartz plate, and the quartz plate is coated with a layer of aluminum having a thickness D. membrane,
步骤四，铝膜镀到一定厚度后，离子发射装置停止发射，通过传送装置将石英片移动到与银材靶相对的工作位置，并保持石英片的温度为某一范围不能冷却，Step 4: after the aluminum film is plated to a certain thickness, the ion emitting device stops emitting, and the quartz plate is moved to a working position opposite to the silver target by the conveying device, and the temperature of the quartz plate is kept within a certain range and cannot be cooled.
步骤五，通过离子发射装置发射高能粒子轰击，使银材靶发生溅射而使银原子沉积在铝膜上面并且与铝膜融合形成均匀的银铝合金膜，银铝合金膜的厚度为H，且D/(H-D)＝X，Step 5: emitting high-energy particle bombardment by the ion emitting device, causing the silver target to be sputtered to deposit silver atoms on the aluminum film and fused with the aluminum film to form a uniform silver-aluminum alloy film, the thickness of the silver-aluminum alloy film being H, And D/(HD)=X,
步骤六，取出成品检测入库。Step six, take out the finished product inspection and storage.
所述石英片的两侧均设置有离子发射装置、铝材靶及银材靶，从
而在启动磁控溅射镀膜设备后可以同时在石英片的两侧镀上银铝合金膜。An ion emitting device, an aluminum target, and a silver target are disposed on both sides of the quartz plate.
After the magnetron sputtering coating device is activated, a silver-aluminum alloy film can be plated on both sides of the quartz plate at the same time.
所述步骤四中的温度为：200-550度。The temperature in the step 4 is: 200-550 degrees.
所述步骤五中X的范围为：5-20，In the fifth step, the range of X is: 5-20,
本发明的有益效果是：通过本工艺在石英片上形成的银铝合金膜不仅与石英片结合牢固，而且能够精确控制银铝合金膜中银和铝的成分比例，因而，最终成品银铝合金晶振片的各项性能在满足了基本的使用要求的基础上，能够达到我们所需要的设置，具有我们所需要的散热性、导电性、较小的阻抗、及硬度。The beneficial effects of the invention are that the silver-aluminum alloy film formed on the quartz plate by the process not only firmly bonds with the quartz plate, but also can accurately control the composition ratio of silver and aluminum in the silver-aluminum alloy film, and thus, the final finished silver-aluminum alloy crystal oscillator piece Based on the basic requirements of the application, we can achieve the settings we need, with the heat dissipation, conductivity, low impedance, and hardness we need.
下面结合附图和实施例对本发明进一步说明。The invention will now be further described with reference to the drawings and embodiments.
图1是本发明的银铝合金晶振片其中一种产品的结构示意图。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of one of the products of the silver-aluminum alloy crystal oscillator of the present invention.
参照图1，本发明公开了一种银铝合金晶振片镀膜工艺，包括以下步骤：Referring to FIG. 1 , the present invention discloses a silver aluminum alloy crystal oscillator plate coating process, comprising the following steps:
步骤一，准备铝材靶、银材靶及需要镀膜的石英片，本工艺中，铝材靶及银材靶都必须是纯铝或纯银的材质，混合金属不能作为靶材，Step one: preparing an aluminum target, a silver target, and a quartz piece to be coated. In the process, the aluminum target and the silver target must be pure aluminum or pure silver, and the mixed metal cannot be used as a target.
步骤二，将铝材靶、银材靶及石英片放置于磁控溅射镀膜设备中，所述磁控溅射镀膜设备中的镀膜工作区域充有高纯度氩气，且本磁控溅射镀膜设备包括用于发射高能粒子的离子发射装置和用于移动石英片的传送装置，磁控溅射镀膜设备为外购设备，再此不详述其结构，
但是所述石英片的两侧均设置有离子发射装置、铝材靶及银材靶，从而在启动磁控溅射镀膜设备后可以同时在石英片的两侧镀上银铝合金膜，这样镀膜效率更高。Step two, placing an aluminum target, a silver target and a quartz plate in a magnetron sputtering coating device, wherein the coating working area in the magnetron sputtering coating device is filled with high purity argon gas, and the magnetron sputtering The coating device includes an ion emitting device for emitting high-energy particles and a conveying device for moving the quartz plate, and the magnetron sputtering coating device is an outsourced device, and the structure thereof is not detailed.
However, both sides of the quartz plate are provided with an ion emitting device, an aluminum target and a silver target, so that after the magnetron sputtering coating device is activated, a silver-aluminum alloy film can be simultaneously plated on both sides of the quartz plate. higher efficiency.
本设备的工作原理为：高能粒子为电子，在电场的作用下，在飞出的过程中与氩原子发生碰撞，使其电离产生出氩离子和新的电子；氩离子在电场作用下加速飞向阴极靶，本例中阴极靶是铝材靶及银材靶，并以高能量轰击靶表面，使靶材发生溅射。在溅射粒子中，中性的靶原子沉积在石英片上形成薄膜，而产生的二次电子会受到电场和磁场作用，被束缚在靠近靶表面的等离子体区域内，并且在该区域中电离出大量的氩离子来轰击靶材，从而实现了高速的沉积速率。随着碰撞次数的增加，二次电子的能量消耗殆尽，逐渐远离靶表面，并在电场的作用下最终沉积在石英片上，由于该电子的能量很低，传递给石英片的能量很小，致使石英片温升较低，因而不会导致熔点较低的铝在石英片上形成熔坑。The working principle of the device is as follows: the high-energy particles are electrons, and under the action of the electric field, they collide with the argon atoms during the flying out process to ionize to generate argon ions and new electrons; the argon ions accelerate under the action of the electric field. To the cathode target, in this example, the cathode target is an aluminum target and a silver target, and the target surface is bombarded with high energy to cause the target to be sputtered. In the sputtered particles, a neutral target atom is deposited on the quartz plate to form a thin film, and the generated secondary electrons are subjected to an electric field and a magnetic field, are bound in a plasma region close to the target surface, and are ionized in the region. A large amount of argon ions are used to bombard the target, thereby achieving a high deposition rate. As the number of collisions increases, the energy of the secondary electrons is exhausted, gradually away from the target surface, and finally deposited on the quartz plate under the action of the electric field. Since the energy of the electron is very low, the energy transmitted to the quartz plate is small. This causes the quartz plate to have a lower temperature rise and thus does not cause the aluminum having a lower melting point to form a crater on the quartz plate.
步骤三，启动磁控溅射镀膜设备，通过离子发射装置发射高能粒子的轰击，使铝材靶发生溅射而使铝原子沉积在石英片上，首先在石英片上镀上一层厚度为D的铝膜，本例中，必须要先在石英片上镀铝膜，因为铝材与石英片表面的结合力最好，In the third step, the magnetron sputtering coating device is started, and the bombardment of the high-energy particles is performed by the ion-emitting device, so that the aluminum target is sputtered and the aluminum atoms are deposited on the quartz plate. First, the quartz plate is coated with a layer of aluminum having a thickness D. Membrane, in this case, it is necessary to first plate the aluminum film on the quartz plate because the bonding force between the aluminum and the quartz plate is the best.
步骤四，铝膜镀到一定厚度后，离子发射装置停止发射，通过传送装置将石英片移动到与银材靶相对的工作位置，并保持石英片的温度为某一范围不能冷却，该温度为200-550度，在此温度范围内，银具有与铝膜很好的融合性，因而在后续的步骤中能够形成均匀的银铝
合金膜，Step 4: after the aluminum film is plated to a certain thickness, the ion emitting device stops emitting, and the quartz plate is moved to a working position opposite to the silver target by the conveying device, and the temperature of the quartz plate is kept within a certain range and cannot be cooled. 200-550 degrees, in this temperature range, silver has a good fusion with the aluminum film, so in the subsequent steps can form a uniform silver aluminum
Alloy film,
步骤五，通过离子发射装置发射高能粒子轰击，使银材靶发生溅射而使银原子沉积在铝膜上面并且与铝膜融合形成均匀的银铝合金膜，银铝合金膜的厚度为H，且D/(H-D)＝X，X的范围为：5-20，上述X的值直接表示的是铝膜厚与步骤五中增加厚度的比值，该增加厚度是H-D，而该增加厚度是因为从银材靶溅射出的银原子沉积而成，因为镀膜的面积是不变的，因而X值实质上表示了铝和银在银铝合金膜中的成分比例，而该成分比例是决定该银铝合金膜的性能的关键因素，在此比值下，既满足了基本的使用要求，又保证银铝合金晶振片的各项性能能够达到我们需要的设置，具有需要的散热性、导电性、较小的阻抗、及硬度，如果银的比例过低，肯定达不到散热性、导电性、较小的阻抗、并且具有一定的硬度的基本要求，而且在检测及使用过程中易起压痕或刮痕；如果银的比例过高，不仅成本高，而且过量的银在溅射到铝膜上后不能均匀融入铝膜而会在铝膜表面形成银斑，因而影响整个产品的外观。Step 5: emitting high-energy particle bombardment by the ion emitting device, causing the silver target to be sputtered to deposit silver atoms on the aluminum film and fused with the aluminum film to form a uniform silver-aluminum alloy film, the thickness of the silver-aluminum alloy film being H, And D / (HD) = X, X range is: 5-20, the value of X directly represents the ratio of the thickness of the aluminum film to the increased thickness in step 5, the increased thickness is HD, and the increase in thickness is because The silver atoms sputtered from the silver target are deposited. Since the area of the coating is constant, the X value substantially represents the composition ratio of aluminum and silver in the silver aluminum alloy film, and the ratio of the composition determines the silver. The key factor of the performance of the aluminum alloy film, in this ratio, not only meets the basic requirements of use, but also ensures that the performance of the silver-aluminum alloy crystal oscillator can achieve the required settings, with the required heat dissipation, conductivity, and Small impedance, and hardness, if the proportion of silver is too low, it will not reach the basic requirements of heat dissipation, electrical conductivity, small impedance, and certain hardness, and it is easy to indent or during detection and use. Scratch If the proportion of silver is too high, not only is the cost high, but excessive silver cannot be uniformly integrated into the aluminum film after being sputtered onto the aluminum film, and silver spots are formed on the surface of the aluminum film, thereby affecting the appearance of the entire product.
步骤六，取出成品检测入库。Step six, take out the finished product inspection and storage.
以上对本发明实施例所提供的一种银铝合金晶振片的合金镀膜工艺，进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明
的限制。
The alloy plating process of a silver-aluminum alloy crystal oscillator provided by the embodiment of the present invention is described in detail. The principle and the embodiment of the present invention are described in the following. The description of the above embodiment is only used. To help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in specific embodiments and application scopes. Content should not be construed as being to the present invention
limits.
Claims (4)
- 一种银铝合金晶振片镀膜工艺，其特征在于：包括以下步骤：A silver aluminum alloy crystal plate coating process characterized by comprising the following steps:步骤一，准备铝材靶、银材靶及需要镀膜的石英片，Step one, preparing an aluminum target, a silver target, and a quartz piece to be coated.步骤二，将铝材靶、银材靶及石英片放置于磁控溅射镀膜设备中，所述磁控溅射镀膜设备中的镀膜工作区域充有高纯度氩气，且本磁控溅射镀膜设备包括用于发射高能粒子的离子发射装置和用于移动石英片的传送装置，Step two, placing an aluminum target, a silver target and a quartz plate in a magnetron sputtering coating device, wherein the coating working area in the magnetron sputtering coating device is filled with high purity argon gas, and the magnetron sputtering The coating apparatus includes an ion emitting device for emitting high energy particles and a conveying device for moving the quartz sheet,步骤三，启动磁控溅射镀膜设备，通过离子发射装置发射高能粒子的轰击，使铝材靶发生溅射而使铝原子沉积在石英片上，而在石英片上镀上一层厚度为D的铝膜，In the third step, the magnetron sputtering coating device is activated, and the bombardment of the high-energy particles is performed by the ion-emitting device, so that the aluminum target is sputtered to deposit aluminum atoms on the quartz plate, and the quartz plate is coated with a layer of aluminum having a thickness D. membrane,步骤四，铝膜镀到一定厚度后，离子发射装置停止发射，通过传送装置将石英片移动到与银材靶相对的工作位置，并保持石英片的温度为某一范围不能冷却，Step 4: after the aluminum film is plated to a certain thickness, the ion emitting device stops emitting, and the quartz plate is moved to a working position opposite to the silver target by the conveying device, and the temperature of the quartz plate is kept within a certain range and cannot be cooled.步骤五，通过离子发射装置发射高能粒子轰击，使银材靶发生溅射而使银原子沉积在铝膜上面并且与铝膜融合形成均匀的银铝合金膜，银铝合金膜的厚度为H，且D/(H-D)＝X，Step 5: emitting high-energy particle bombardment by the ion emitting device, causing the silver target to be sputtered to deposit silver atoms on the aluminum film and fused with the aluminum film to form a uniform silver-aluminum alloy film, the thickness of the silver-aluminum alloy film being H, And D/(HD)=X,步骤六，取出成品检测入库。Step six, take out the finished product inspection and storage.
- 根据权利要求1所述的一种银铝合金晶振片镀膜工艺，其特征在于：所述X的范围为：5-20。The silver-aluminum alloy crystal oscillator plate coating process according to claim 1, wherein the X ranges from 5 to 20.
- 根据权利要求1所述的一种银铝合金晶振片镀膜工艺，其特征在于：所述石英片的两侧均设置有离子发射装置、铝材靶及银材靶，从而在启动磁控溅射镀膜设备后可以同时在石英片的两侧镀上银 铝合金膜。The silver-aluminum alloy crystal oscillator plate coating process according to claim 1, wherein the quartz plate is provided with an ion emitting device, an aluminum target and a silver target on both sides thereof, thereby starting magnetron sputtering The coating device can be plated with silver on both sides of the quartz plate at the same time. Aluminum alloy film.
- 根据权利要求1所述的一种银铝合金晶振片镀膜工艺，其特征在于：所述步骤四中的温度为：200-550度。 The silver-aluminum alloy crystal plate coating process according to claim 1, wherein the temperature in the step 4 is 200-550 degrees.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066655A (en) * | 2009-09-17 | 2011-03-31 | Kyocera Kinseki Corp | Crystal vibrating element |
| CN102088274A (en) * | 2010-12-08 | 2011-06-08 | 郑州原创电子科技有限公司 | Production method of high-fundamental frequency crystal resonator |
| CN201869177U (en) * | 2010-12-08 | 2011-06-15 | 郑州原创电子科技有限公司 | High fundamental frequency crystal resonator |
| JP2012023677A (en) * | 2010-07-16 | 2012-02-02 | Daishinku Corp | Crystal oscillating device |
| JP2012093584A (en) * | 2010-10-27 | 2012-05-17 | Toyota Central R&D Labs Inc | Optical coupler, optical scanner and spectrometer |
| CN103824790A (en) * | 2014-02-17 | 2014-05-28 | 上海理工大学 | Ion beam etching depth monitoring method |
| CN104022753A (en) * | 2014-06-19 | 2014-09-03 | 苏州普京真空技术有限公司 | Bi-metal crystal oscillation wafer |
| CN104022754A (en) * | 2014-06-19 | 2014-09-03 | 苏州普京真空技术有限公司 | Novel quartz crystal oscillator |
| CN105088158A (en) * | 2015-08-04 | 2015-11-25 | 中山泰维电子有限公司 | A silver-aluminum alloy crystal oscillator film coating process |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100482854C (en) * | 2005-01-27 | 2009-04-29 | 中华映管股份有限公司 | Magnetron sputtering manufacturing process |
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
-
2015
- 2015-08-04 CN CN201510469592.6A patent/CN105088158A/en active Pending
-
2016
- 2016-08-01 WO PCT/CN2016/000421 patent/WO2017020534A1/en active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066655A (en) * | 2009-09-17 | 2011-03-31 | Kyocera Kinseki Corp | Crystal vibrating element |
| JP2012023677A (en) * | 2010-07-16 | 2012-02-02 | Daishinku Corp | Crystal oscillating device |
| JP2012093584A (en) * | 2010-10-27 | 2012-05-17 | Toyota Central R&D Labs Inc | Optical coupler, optical scanner and spectrometer |
| CN102088274A (en) * | 2010-12-08 | 2011-06-08 | 郑州原创电子科技有限公司 | Production method of high-fundamental frequency crystal resonator |
| CN201869177U (en) * | 2010-12-08 | 2011-06-15 | 郑州原创电子科技有限公司 | High fundamental frequency crystal resonator |
| CN103824790A (en) * | 2014-02-17 | 2014-05-28 | 上海理工大学 | Ion beam etching depth monitoring method |
| CN104022753A (en) * | 2014-06-19 | 2014-09-03 | 苏州普京真空技术有限公司 | Bi-metal crystal oscillation wafer |
| CN104022754A (en) * | 2014-06-19 | 2014-09-03 | 苏州普京真空技术有限公司 | Novel quartz crystal oscillator |
| CN105088158A (en) * | 2015-08-04 | 2015-11-25 | 中山泰维电子有限公司 | A silver-aluminum alloy crystal oscillator film coating process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230323524A1 (en) * | 2022-04-07 | 2023-10-12 | Cantech Inc. | Quartz crystal sensor coated with gold-aluminum by magnetron sputtering |
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