WO2014178654A1 - Semiconductor light emitting diode, method for manufacturing semiconductor light emitting diode, and backlight unit comprising semiconductor light emitting diode - Google Patents

Abstract

The present disclosure relates to a semiconductor light emitting diode, a method for manufacturing the light emitting diode, and a backlight unit comprising the semiconductor light emitting diode, the semiconductor light emitting diode comprising: a metal substrate; a semiconductor light emitting diode chip comprising a first electrode electrically connected to a first semiconductor layer and a second electrode electrically connected to a second semiconductor layer, and fixed to the upper surface of the metal substrate; a reflective portion formed so as to surround the periphery of the semiconductor light emitting diode chip from on top of the upper surface of the metal substrate; and an encapsulation portion formed so as to cover the upper surface of the reflective portion and the upper surface of the semiconductor light emitting diode chip.

Description

Back light unit including semiconductor light emitting device, method for manufacturing semiconductor light emitting device and semiconductor light emitting device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, a method for manufacturing a semiconductor light emitting device, and a backlight unit including a semiconductor light emitting device. The present invention relates to a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device that can be applied to the unit, and a backlight unit of a side view type.

This section provides background information related to the present disclosure which is not necessarily prior art.

The liquid crystal display device is a display device having various advantages such as small size, light weight, and low power consumption, and is used for various applications such as a liquid crystal display device for a mobile communication terminal, a monitor for a notebook PC, a monitor for a desktop PC, and a large flat panel TV.

1 is a view schematically showing a liquid crystal display device having a conventional top view backlight unit. 2 is a schematic view of a liquid crystal display device having a conventional side view backlight unit.

The liquid crystal display device includes a liquid crystal panel 10 and a backlight unit 30. Since the liquid crystal panel 10 included in the liquid crystal display device is mostly composed of a light receiving element that displays an image by controlling the amount of light coming from the outside, the liquid crystal display device is used to irradiate light to the liquid crystal panel 10. The backlight unit 30 is required.

The backlight unit 30 provides light to the liquid crystal panel 10, and the provided light passes through the liquid crystal panel 10. In this case, the liquid crystal panel 10 implements an image by adjusting the light transmittance. The backlight unit 30 may include a light source assembly 35 and may be classified into a top view method and a side view method according to the arrangement of the light source assembly 40.

As shown in FIG. 1, in the top view system, a light source assembly 35 including a circuit board 31 and a plurality of light sources 33 is disposed on a rear surface of the liquid crystal panel 10, and a plurality of light sources 33 are provided. The light emitted from the? Is provided to the front liquid crystal panel 10 directly through the diffusion plate 25. As shown in FIG. 2, in the side view method, a light source assembly 35 including a circuit board 31 and a plurality of light sources 33 is disposed on a side of the light guide plate 45 for guiding light, and a liquid crystal panel. The light guide plate 45 disposed on the rear surface of the light source 10 provides light in a manner of guiding light entering the side surface of the light guide plate 45 toward the liquid crystal panel 10 forwardly. Compared to the top view method, the side view method has various advantages such as better light uniformity, longer endurance life, and an advantage in making the liquid crystal display device thinner.

As a light source used in the light source assembly, an electro luminescence (EL), a cold cathode fluorescent lamp (CCFL), a hot cathode fluorescent lamp (HCFL), a semiconductor light emitting device, or the like may be used. Among them, semiconductor light emitting devices have advantages of low power consumption and excellent luminous efficiency, and are increasingly used as they are suitable for miniaturization and slimming of information and communication devices.

In particular, in the case of a mobile communication terminal such as a mobile phone, a thinner liquid crystal display device is required according to a slimming trend, and a light source assembly of a side view type that uses a semiconductor light emitting device as a light source, which is advantageous for slimming the liquid crystal display device, is mainly used. It is used.

Although a liquid crystal display device having a slimmer structure is realized by using a semiconductor light emitting device as a light source and configuring a light source assembly in a side view method, there is still a need for a slimmer liquid crystal display device. In order to meet this demand, there is a need for a light source assembly having a thickness of 1 mm or less and further 0.5 mm or less.

3 is a view illustrating an example of a conventional side view backlight unit, and the light source assembly 35 is disposed to face the side surface 41 of the light guide plate 45 and the light guide plate 45. It is provided with a light source 33 is fixed to the circuit board 31 to emit light toward the side of. The light source 33 is configured in the form of a semiconductor light emitting device package and includes a housing 37 including a semiconductor light emitting device chip 34 and a cavity 36 for receiving the semiconductor light emitting device chip 34. In this structure, the width of the circuit board 31 should be smaller than the required thickness of the light source assembly 35 and the dimension of either the width or length of the semiconductor light emitting device chip 34 is at least 0.2 mm. In this case, it will be appreciated that it is not easy to implement the light source assembly 35 having such a structure with a thickness of about 1 mm.

4 is a view illustrating another example of a conventional side view backlight unit, wherein the light source assembly 35 is laid down to be perpendicular to the side 41 of the light guide plate 45, and a circuit board. A light source 33 fixed above and a reflector 38 for reflecting the light emitted from the light source 33 toward the side surface 41 of the light guide plate 45 are provided. The light source 33 is provided in the form of a semiconductor light emitting device chip. This structure removes the constraints caused by the width of the circuit board 31 by laying the circuit board 31 on its side, and uses the thickness of the semiconductor light emitting device chip used as the light source to be smaller than the horizontal and vertical dimensions. It is intended to make the assembly 35 thin. However, as the emission surface of the light source 33 in the form of a semiconductor light emitting device chip is perpendicular to the side surface 41 of the light guide plate 45, the light emitted from the semiconductor light emitting device chip is transferred to the side surface 41 of the light guide plate 45. There is a need for a reflector 38 to guide. Such a reflector 38 is a factor of increasing the thickness of the light source assembly 35, and thus there is a limit in forming a thin light source assembly 35 having such a structure.

This is described later in the section titled 'Details of the Invention.'

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a gap and a first conductive portion disposed to face each other with a gap therebetween and electrically separated by the gap And a second substrate, the metal substrate being formed in a hexahedron shape having an upper surface, a lower surface, a front surface, a rear surface, a left surface, and a right surface; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes A semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the semiconductor light emitting device chip being fixed to an upper surface of the metal substrate; A reflector formed to surround a semiconductor light emitting device chip on an upper surface of the metal substrate; And an encapsulation portion formed to cover an upper surface of the reflective portion and an upper surface of the semiconductor light emitting device chip.

According to another aspect of the present disclosure, in a method of manufacturing a semiconductor light emitting device, the first conductive portion and the second conductive portion, and the first conductive portion and the second conductive portion are formed between the first conductive portion and the second conductive portion. Preparing a plate including a groove separating the two conductive portions; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes Fixing a semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer on an upper surface of the plate; Covering the semiconductor light emitting device chip with a reflecting agent; After curing the reflector, partially removing the reflector in accordance with the height of the upper surface of the semiconductor light emitting device chip to expose the upper surface of the semiconductor light emitting device chip; Covering an upper surface of the reflector and an upper surface of the semiconductor light emitting device chip with an encapsulant; Partially removing the lower part of the plate such that the groove is exposed toward the lower surface of the plate; And cutting the plate and the encapsulant together along a predetermined boundary of the semiconductor light emitting device.

According to another aspect of the present disclosure, a backlight unit includes: a light guide plate configured to guide light incident on one side to an upper surface; A circuit board lying on one side of the light guide plate; And a gap, and a hexahedron shape having a first conductive part and a second conductive part disposed to face side surfaces with the gap interposed therebetween and electrically separated by the gap, and having an upper surface, a lower surface, a front surface, a rear surface, a left surface, and a right surface. A metal substrate formed between the first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a first semiconductor layer and a second semiconductor layer interposed therebetween to recombine electrons and holes. A semiconductor light emitting device chip comprising: an active layer for generating light by using light, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, and fixed to an upper surface of the metal substrate; A metal substrate including a reflector formed to surround a circumference of the semiconductor light emitting device chip on an upper surface of the substrate, and an encapsulation formed to cover an upper surface of the reflector and a top surface of the semiconductor light emitting device chip; The first or second conductive part facing the upper surface of the circuit board is fixed to the upper surface of the circuit board so that the front or rear surface of the substrate is laid so as to face the upper surface of the circuit board and the upper surface of the metal substrate faces one side of the light guide plate. Provided is a backlight unit comprising a; semiconductor light emitting device electrically connected to a circuit board through each front or rear surface.

According to another aspect of the present disclosure, a backlight unit includes: a light guide plate configured to guide light incident on one side to an upper surface; A circuit board lying on one side of the light guide plate; And a first conductive part and a second conductive part disposed to face side surfaces with a gap and a gap therebetween, and electrically separated by the gap, and having a top surface, a bottom surface, a front surface, a rear surface, a left side surface, and a right side surface. A metal substrate to be formed, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, interposed between the first semiconductor layer and the second semiconductor layer, and using recombination of electrons and holes A semiconductor light emitting device chip having an active layer for generating light, a first electrode electrically connected to a first semiconductor layer, and a second electrode electrically connected to a second semiconductor layer, and fixed to an upper surface of a metal substrate, and a metal An encapsulation part is formed on the upper surface side of the substrate to cover the semiconductor light emitting device chip. The front or rear surface of the metal substrate is laid down to face the upper surface of the circuit board, and the upper surface of the metal substrate is illustrated. A semiconductor light emitting device fixed to an upper surface of the circuit board so as to face one side of the board and electrically connected to the circuit board through front or rear surfaces of the first and second conductive parts facing the upper surface of the circuit board; Provided is a backlight unit comprising:

This is described later in the section titled 'Details of the Invention.'

1 is a view schematically showing a liquid crystal display device having a conventional top view backlight unit;

2 is a schematic view of a liquid crystal display device having a conventional side view backlight unit;

3 is a view illustrating an example of a conventional side view backlight unit;

4 is a view showing another example of a conventional side view backlight unit;

5 illustrates an example of a semiconductor light emitting device according to the present disclosure;

6 is a cross-sectional view illustrating the semiconductor light emitting device of FIG. 5;

7 illustrates another example of a semiconductor light emitting device according to the present disclosure;

8 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

9 to 15 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

16 is a view illustrating an example of a backlight unit including a semiconductor light emitting device according to the present disclosure;

17 is a plan view illustrating a main part of the backlight unit of FIG. 16;

18 is a cross-sectional view taken along the line A-A of FIG. 17;

19 is a view showing another example of a semiconductor light emitting device configuring a backlight unit according to the present disclosure;

20 illustrates another example of a semiconductor light emitting device constituting the backlight unit according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, and FIG. 6 is a cross-sectional view illustrating the semiconductor light emitting device of FIG. 5.

The semiconductor light emitting device 150 includes a metal substrate 155, a semiconductor light emitting device chip 165, a reflector 170, and an encapsulation 175.

The metal substrate 155 includes a first conductive portion 151 and a second conductive portion 152 that face side surfaces with the gap 153 and the gap 153 interposed therebetween. In the metal substrate 155, the first conductive portion 151 and the second conductive portion 152 are electrically insulated by the gap 153. The metal substrate 155 is formed in a hexahedral shape having an upper surface 154, a lower surface 156, a front surface 157, a rear surface 158, a left surface 159, and a right surface 161. The metal substrate 155 is not required, but the dimension (or distance) z between the upper surface 154 and the lower surface 156 than the dimension (or distance) y between the front surface 157 and the rear surface 158. Is larger.

The semiconductor light emitting device chip 165 may include a first semiconductor layer having a first conductivity (eg, n-type), a second semiconductor layer having a second conductivity (eg, p-type) different from the first conductivity, and a first semiconductor layer. An active layer interposed between the second semiconductor layers and generating light by recombination of electrons and holes, a first electrode 171 electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer 172 is provided. The semiconductor light emitting device chip 165 is provided in a flip chip form. Therefore, the semiconductor light emitting device chip 165 is disposed such that the first electrode 171 and the second electrode 172 are disposed below the upper surface 154 of the metal substrate 155. On the top surface 154 of the metal substrate 155, the first electrode 171 is bonded to the first conductive portion 151, and the second electrode 172 is bonded to the second conductive portion 152.

The semiconductor light emitting device chip 165 is formed in an elongated shape having a long side a and a short side b. The semiconductor light emitting device chip 165 is disposed on the top surface 154 of the metal substrate 155 such that the long side a extends in the left and right directions x of the metal substrate 155. The dimension y between the front surface 157 and the rear surface 158 of the metal substrate 155 may be thin enough to be close to the short side length b of the semiconductor light emitting device chip 165. That is, a semiconductor light emitting device 150 may be provided having a dimension y between a front surface and a back surface that is thin enough to approach the short side length b of the semiconductor light emitting device chip 165.

The reflector 170 may include a white resin having high reflection efficiency. The reflector 170 is formed to surround the semiconductor light emitting device chip 165 on the top surface 154 of the metal substrate 155. The reflector 170 reflects the light emitted from the side surface of the semiconductor light emitting device chip 165 so that the light generated in the active layer is emitted only through the top surface of the semiconductor light emitting device chip 165. Therefore, the light emitted from the semiconductor light emitting device chip 165 has directivity toward the upper surface side. 6 illustrates an example in which the upper surface of the reflector 170 and the upper surface of the semiconductor light emitting device chip 165 have the same height, the upper surface of the reflector 170 is higher than the upper surface of the semiconductor light emitting device chip 165. It may be formed or may be formed lower than the upper surface of the semiconductor light emitting device chip 165.

The encapsulation part 175 includes a resin of a transparent material and a phosphor, and is formed to cover the upper surface of the semiconductor light emitting device chip 165 and the upper surface of the reflector 170. Peripheral surfaces of the reflector 170 and the encapsulation 175 (front surface 181, rear surface 182, left side surface 183, right side surface 184) and the peripheral surface of the metal substrate 155 (front surface 157) , The back surface 158, the left surface 159, the right surface 161 is formed as a continuous surface, and is also a cut surface formed by a cutting process.

FIG. 7 is a view illustrating another example of the semiconductor light emitting device according to the present disclosure, and a filler 147 may be provided in the gap 153 of the metal substrate 155. The gap 153 may be completely filled with the filler 147 or may be partially filled. Filler 147 should be made of an insulating material. Filler 147 may contain phosphors. On the other hand, the filler 147 may contain a white resin together with or in place of the phosphor. Due to the filler 147, the reflection efficiency of the semiconductor light emitting device 150 may be improved.

8 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device chip 165 is bonded to a metal material positioned below the first electrode 171 and the second electrode 172, respectively. Pads 141 and 142 may be provided. Using the bonding pads 141 and 142, the semiconductor light emitting device chip 165 may be bonded to the top surface 154 of the metal substrate 155 by a Jewish bonding method. Therefore, in the completed semiconductor light emitting device 150, a bonding pad 141 is positioned between the first electrode 171 and the first conductive portion 151 of the metal substrate 155, and the second electrode 172 and the metal The bonding pads 142 are positioned between the second conductive portions 152 of the substrate 155.

Hereinafter, a method of manufacturing a semiconductor light emitting device according to the present disclosure will be described.

9 to 15 are diagrams showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

As shown in FIG. 9, a metal plate 155 ′ is prepared as a part of the metal substrate 155. In order to manufacture the plurality of semiconductor light emitting devices 150 in one process, the plate 155 'includes a plurality of grooves 153', so that the upper surface 154 'of the plate 155 is divided into a plurality of regions. Divided. In the plate 155 ′, one side of the groove 153 ′ is the first conductive portion and the other side is the second conductive portion based on the groove 153 ′. The groove 153 ′ may be formed to have a predetermined depth through a wet etching method or a dry etching method, or a mechanical cutting method using a blade or a wire. The material of the plate 155 ′ is not particularly limited as long as it is a conductive metal or a conductive semiconductor, and materials such as W, Mo, Ni, Al, Zn, Ti, Cu, Si, and the like and an alloy form including at least one of them And, considering the electrical conductivity, thermal conductivity, reflectance, soldering properties, etc., Cu or Cu-based alloys are suitable examples.

9 and 10, a plurality of semiconductor light emitting device chips 165 are fixed along the grooves 153 ', as illustrated in FIGS. 9 and 10. The semiconductor light emitting device chip 165 is positioned over the groove 153 ′. Specifically, on the top surface 154 'of the plate 155', the first electrode 171 is formed on the top surface 154 'of the plate 155' on the left side of the groove 153 'based on the groove 153'. The second electrode 172 is bonded to the upper surface 154 ′ of the plate 155 ′ on the right side of the groove 153 ′. Such bonding may be performed using Ag paste, or various methods already known in the semiconductor light emitting device art may be used.

Next, as shown in FIG. 11, the reflector 170 ′ is dispensed on the entire upper surface 154 ′ of the plate 155 ′ so as to cover all the semiconductor light emitting device chips 165, and the reflector 170 ′. ) Harden. The reflector 170 ′ may include a liquid white resin having high reflection efficiency. The reflector 170 ′ is dispensed to a level slightly higher than the height of the top surface of the semiconductor light emitting device chip 165 so that the spaces between the semiconductor light emitting device chips 165 are filled with space. Therefore, all of the peripheral surfaces of the semiconductor light emitting device chip 165 are covered with the reflector 170 ′.

Thereafter, as illustrated in FIG. 12, the reflective agent 170 ′ hardened to the height of the upper surface of the semiconductor light emitting device chip 165 may be partially removed to expose the upper surface of the semiconductor light emitting device chip 165. Removal of the cured reflector 170 'may be removed using a mechanical method such as brushing, lapping, polishing or CMP. In the removal process through such a mechanical method, unlike sapphire having a very high hardness, the white resin can be easily removed because the hardness is relatively low even when cured. At this time, the upper surface of the reflector 170 and the upper surface of the semiconductor light emitting device chip 165 have the same height.

Next, as shown in FIG. 13, the sealing agent 175 'is dispensed so that the upper surface of all the semiconductor light emitting element chips 165 and the reflecting agent may be covered, and this sealing agent 175' is hardened. The encapsulant 175 'may include a liquid transparent resin material such as silicon and the like.

Subsequently, as shown in FIG. 14, the lower portion of the plate 155 ′ is partially removed so that the groove 153 ′ provided in the plate 155 ′ is exposed to the lower surface 156 side of the plate 155 ′. That is, the plate 155 ′ is polished and / or wrapped on the lower surface 156 ′ so that the groove 153 ′ is exposed to the lower surface 156 ′ of the plate 155 ′. As the groove 153 'is exposed to the lower surface 156' of the plate 155 'and is opened, two portions of the plate 155' facing the side with one groove 153 'interposed therebetween Are electrically insulated from each other.

Thereafter, as shown in FIG. 15, the cured reflector 170 ′, the encapsulant 175 ′, and the plate 155 ′ are cut together along the predetermined boundary B of the semiconductor light emitting device on a plane to separate the semiconductors. The light emitting element 150 is completed.

Through the above method, the semiconductor light emitting device chip 165 is fixed to the upper surface of the plate 155 'and covered with the reflector 170' and the encapsulant 175 ', and the lower portion of the plate 155'. Is partially removed to expose the grooves 153 'and then cut along the boundaries of the individual semiconductor light emitting devices to form the metal substrate 155. The groove 153 ′ is a gap 153 of the metal substrate 155, and two portions facing the side surface with the gap 153 interposed therebetween have a first conductive portion 151 and a second portion of the metal substrate 155. It becomes the conductive part 152. In addition, the reflector 170 'and the encapsulant 175' are cut together with the plate 155 'to form the reflector 170 and the encapsulation 175 of the individual semiconductor light emitting device.

The cutting of the plate 155 ', the reflector 170' and the encapsulant 175 'is performed at the same time, and thus, as shown in FIG. 5, the reflector 170 and the encapsulation ( 175 circumferential surface (front surface 181, rear surface 182, left side surface 183, right side surface 184) and circumferential surface of front surface of metal substrate 10 ′ (front surface 157, rear surface 158, left side surface 159 and the right side 161 form a continuous surface formed of a cut surface.

By manufacturing in the above manner, the semiconductor light emitting device 150 is manufactured to have a dimension y between the thin front surface 157 and the rear surface 158 proximate the short side length b of the semiconductor light emitting device chip 165. can do.

16 is a diagram illustrating an example of a backlight unit including a semiconductor light emitting device according to the present disclosure.

As illustrated in FIG. 16, the backlight unit according to the present disclosure includes a light guide plate 110, a circuit board 130, and a semiconductor light emitting device 150.

The light guide plate 110 guides the light incident on one side 111 to the top surface 113. Light emitted from the upper surface 113 of the light guide plate 110 is provided to the liquid crystal panel 10 (see FIG. 2).

The circuit board 130 is disposed in parallel with the light guide plate 110 on one side 111 side of the light guide plate 110, and the semiconductor light emitting device 150 is laid on the upper surface 131 of the circuit board 130. In the extended state, the light exit surface 149 is fixed to face the side surface 111 of the light guide plate 110 to form the light source assembly 120.

Specifically, when the semiconductor light emitting device 150 is fixed to the circuit board 130 to form the light source assembly 120, the dimension y between the front surface 157 and the rear surface 158 of the semiconductor light emitting device 150 is shown. Is an important factor for determining the thickness of the light source assembly 120, it is appropriate to be within the range of 50um to 1000um. This is because when the dimension y between the front surface 157 and the rear surface 158 is 50um or less, it is not easy to design an efficient chip, and when it is 1000um or more, the existing technology can be sufficiently realized. In addition, the dimension z between the upper surface 154 and the lower surface 156 of the semiconductor light emitting device 150 is appropriately within the range of 100um to 2000um. This is because when the dimension z between the upper surface 154 and the lower surface 156 is 100 μm or less, it is difficult to fix the semiconductor light emitting device 150 to the circuit board 130, and in the case of 2000 μm or more, cutting may be very difficult. .

17 is a plan view illustrating a main part of the backlight unit of FIG. 16, and FIG. 18 is a cross-sectional view taken along a line A-A of FIG. 17.

The circuit board 130 is disposed to lie in parallel with the light guide plate 110 on one side 111 side of the light guide plate 110.

The semiconductor light emitting device 150 may include a front surface 157 or a rear surface 158 of the metal substrate 155 lying down to face the top surface 131 of the circuit board 130, and the top surface 154 of the metal substrate 155 may be disposed. The upper surface 131 of the circuit board 130 is fixed to face one side 111 of the light guide plate 110. Therefore, the light exit surface 149 of the semiconductor light emitting device 150 faces the side surface 111 of the light guide plate 110. In addition, the first conductive portion may be disposed on the front surface 157 or the rear surface 158 of the metal substrate 155 facing the upper surface 131 of the circuit board 130 instead of the bottom surface 156 of the metal substrate 155. The 151 and the second conductive portion 152 are electrically connected to the circuit board 130, respectively. When the metal substrate 155 has a dimension z between the upper surface 154 and the lower surface 156 larger than the dimension y between the front surface 157 and the rear surface 158, the front surface of the metal substrate 155 A sufficient contact area can be secured between the first conductive portion 151 and the second conductive portion 152 and the upper surface 131 of the circuit board 130 at the 157 or the rear surface 158, such as soldering or the like. When bonding in a manner, the reliability of the coupling between the semiconductor light emitting device 150 and the circuit board 130 may be improved.

As described above, the circuit board 130 is disposed to lie in parallel with the light guide plate 110, and the semiconductor light emitting device 150 is thin between the front and rear surfaces such that the semiconductor light emitting device 150 is close to the short side length b of the semiconductor light emitting device chip 165. The semiconductor light emitting device 150 is laid down and fixed so that the front surface 157 or the rear surface 158 of the metal substrate 155 contacts the upper surface 131 of the circuit board 130.

In the light source assembly 120 including the circuit board 130 and the semiconductor light emitting device 150, the thickness T of the light source assembly 120 to be slimmed is equal to the thickness t of the circuit board 130. It corresponds to the sum of the dimension y between the front surface 157 and the rear surface 158 of the light emitting device 150. In addition, the dimension y between the front surface 157 and the rear surface 158 of the semiconductor light emitting device 150 surrounds the short side length b of the semiconductor light emitting device chip 165 and the circumference of the semiconductor light emitting device chip 165. Corresponds to a value obtained by adding the thickness of the reflector 170. The circuit board 130 may not only be formed very thin but also have a limited effect on the thickness T of the light source assembly 120 as it is laid down. The front surface of the metal substrate 155 includes a reflector 170 which reflects light emitted from the side surface of the semiconductor light emitting device 150 to emit light having high directivity through the light exit surface 149. And having a very thin semiconductor light emitting device 50 corresponding to the dimension y between the 157 and the back surface 158, and placing the semiconductor light emitting device 150 on the upper surface 131 of the circuit board 130. do. Accordingly, a light source assembly 120 having a significantly thin thickness, that is, a significantly thin backlight unit suitable for the slimming trend of the liquid crystal display device may be provided.

19 is a view illustrating another example of a semiconductor light emitting device constituting the backlight unit according to the present disclosure, wherein the semiconductor light emitting device chip 165 is positioned below the first electrode 171 and the second electrode 172, respectively. Bonding pads 141 and 142 may be provided. By using the bonding pads 141 and 142, the semiconductor light emitting device chip 165 may be bonded to the upper surface 154 of the metal substrate 155 by a Jewish bonding method. Therefore, in the completed semiconductor light emitting device 150, a bonding pad 141 is positioned between the first electrode 171 and the first conductive portion 151 of the metal substrate 155, and the second electrode 172 and the metal The bonding pads 142 are positioned between the second conductive portions 152 of the substrate 155.

FIG. 20 is a view illustrating another example of a semiconductor light emitting device constituting the backlight unit according to the present disclosure. A lateral chip is used as the semiconductor light emitting device chip 165. The semiconductor light emitting device chip 165 is disposed such that the first electrode 171 and the second electrode 172 are positioned above. The semiconductor light emitting device chip 165 is positioned over the gap 153. The first electrode 171 is connected to the upper surface of the first conductive portion 151 by wire bonding, and the second electrode 172 is connected to the upper surface of the second conductive portion 152 by wire bonding. Accordingly, in the completed semiconductor light emitting device, the first electrode 171 is electrically connected to the first conductive portion 151 by the wire 176, and the second electrode 172 is second by the wire 177. It is electrically connected to the conductive portion 152.

Meanwhile, although not separately illustrated, the semiconductor light emitting device chip 165 may be disposed so as not to span the gap 153. In this case, the semiconductor light emitting device chip 165 is different from the first conductive part 151 and the second conductive part 152, except that the first electrode 171 is connected to the wire 176. The first conductive portion 151 is electrically connected to each other, and the second electrode 172 is electrically connected to the second conductive portion 152 by the wire 177.

On the other hand, although not separately shown, a semiconductor light emitting chip in the form of a vertical chip may also be used. In this case, the semiconductor light emitting device chip is positioned on the first conductive part 151 or the second conductive part 152, and one electrode positioned below the semiconductor light emitting device chip is the first conductive part 151 and the second conductive part. The other electrode which is directly bonded to one of the portions 152 and positioned on the semiconductor light emitting device chip is bonded to the other of the first conductive portion 151 and the second conductive portion 152 by a wire bonding method. .

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting element, characterized in that the metal substrate has a larger dimension between the upper and lower surfaces than the dimension between the front and rear surfaces.

(2) A semiconductor light emitting element chip having a long side and a short side, the semiconductor light emitting element characterized in that the long side is placed on the upper surface of the metal substrate so as to extend in the left and right direction of the metal substrate.

(3) A semiconductor light emitting element, wherein the reflecting portion contains white resin.

(4) A semiconductor light emitting element, characterized in that a filler is provided in the gap.

(5) A semiconductor light emitting element, characterized in that the circumferential surfaces (front, rear, left and right surfaces) of the metal substrate, the circumferential surface of the reflecting portion and the circumferential surface of the encapsulation portion are continuously connected.

(6) The semiconductor light emitting element, wherein the peripheral surfaces (front, rear, left and right surfaces) of the metal substrate, the peripheral surface of the reflecting portion and the peripheral surface of the encapsulation portion are cut surfaces.

(7) The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are located below, the first electrode is bonded to the upper surface of the first conductive portion, and the second electrode is bonded to the upper surface of the second conductive portion. A semiconductor light emitting device, characterized in that.

(8) In the step of preparing a plate, a method for manufacturing a semiconductor light emitting device, characterized in that the filler is provided in the groove.

(9) A backlight unit, characterized in that the metal substrate has a larger dimension between the upper and lower surfaces than the dimension between the front and rear surfaces.

(10) A backlight unit comprising a semiconductor light emitting device chip having a long side and a short side, and placed on an upper surface of the metal substrate so that the long side extends in the left and right directions of the metal substrate.

(11) The backlight unit, characterized in that the filler is provided in the gap.

(12) A backlight unit, wherein the filler contains phosphors.

(13) A backlight unit, characterized in that the circumferential surfaces (front, rear, left and right surfaces) of the metal substrate and the circumferential surfaces of the encapsulation portion are continuously connected.

(14) A backlight unit, wherein the circumferential surfaces (front, rear, left and right surfaces) of the metal substrate and the circumferential surfaces of the encapsulation portion are cut surfaces.

(15) A backlight unit, wherein the semiconductor light emitting element chip is positioned across the gap.

(16) The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are located below, the first electrode is bonded to the upper surface of the first conductive portion, and the second electrode is bonded to the upper surface of the second conductive portion. Backlight unit, characterized in that the.

(17) A backlight unit, wherein the semiconductor light emitting device chip has bonding bonding pads positioned under the first electrode and the second electrode, respectively, and is bonded to the metal substrate by a Jewish bonding method.

(18) The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are positioned on the upper portion, and the first electrode and the second electrode are electrically connected to the first conductive portion and the second conductive portion by wires, respectively. Backlight unit, characterized in that connected.

(19) A backlight unit, wherein the encapsulation portion contains a phosphor.

According to one semiconductor light emitting device according to the present disclosure, a semiconductor light emitting device having a thin thickness can be provided.

According to another semiconductor light emitting device according to the present disclosure, it is possible to provide a semiconductor light emitting device having excellent directivity of emitted light.

According to one semiconductor light emitting device manufacturing method according to the present disclosure, it is possible to provide a semiconductor light emitting device in which a reflecting unit is integrated.

According to another method of manufacturing a semiconductor light emitting device according to the present disclosure, it is possible to provide a semiconductor light emitting device having a thin thickness while having a reflector reflecting light emitted to a side surface of the semiconductor light emitting device chip.

According to another backlight unit according to the present disclosure, a thin liquid crystal display device may be provided through a thin backlight unit.

According to another backlight unit according to the present disclosure, it is possible to improve the reliability of the coupling between the semiconductor light emitting element constituting the light source assembly and the circuit board.

According to one backlight unit according to the present disclosure, a thin thickness side view type backlight unit may be provided through a thin thickness light source assembly.

According to another backlight unit according to the present disclosure, a thin liquid crystal display device may be provided through a thin backlight unit.

According to another backlight unit according to the present disclosure, it is possible to improve the reliability of coupling between the semiconductor light emitting element constituting the light source assembly and the circuit board.

Claims (23)

In a semiconductor light emitting device, It is arranged in the form of a cube having a top, a bottom, a front, a back, a left side and a right side, including a gap, and a first conductive portion and a second conductive portion disposed to face the side with the gap therebetween and electrically separated by the gap. A metal substrate formed; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes A semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the semiconductor light emitting device chip being fixed to an upper surface of the metal substrate; A reflector formed to surround a semiconductor light emitting device chip on an upper surface of the metal substrate; And And an encapsulation portion formed to cover the upper surface of the reflecting portion and the upper surface of the semiconductor light emitting device chip. The method according to claim 1, The metal substrate is a semiconductor light emitting device, characterized in that the dimension between the upper surface and the lower surface than the dimension between the front and rear surfaces. The method according to claim 1, A semiconductor light emitting device chip has a long side and a short side, the semiconductor light emitting device, characterized in that the long side is placed on the upper surface of the metal substrate so as to extend in the left and right direction of the metal substrate. The method according to claim 1, A semiconductor light emitting element, wherein the reflecting portion contains white resin. The method according to claim 1, A semiconductor light emitting device, characterized in that the filler is provided in the gap. The method according to claim 1, A circumferential surface (front, rear, left and right sides) of the metal substrate, the circumferential surface of the reflecting portion and the circumferential surface of the encapsulation portion are successively connected. The method according to claim 6, A circumferential surface (front, rear, left and right sides) of the metal substrate, the circumferential surface of the reflecting portion and the circumferential surface of the encapsulation portion are cut surfaces. The method according to claim 1, The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are located below. The first electrode is bonded to the upper surface of the first conductive portion, The second electrode is bonded to the upper surface of the second conductive portion, the semiconductor light emitting device. In the method of manufacturing a semiconductor light emitting device, Preparing a plate including a first conductive portion and a second conductive portion, and a groove formed between the first conductive portion and the second conductive portion to separate the first conductive portion and the second conductive portion; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes Fixing a semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer on an upper surface of the plate; Covering the semiconductor light emitting device chip with a reflecting agent; After curing the reflector, partially removing the reflector in accordance with the height of the upper surface of the semiconductor light emitting device chip to expose the upper surface of the semiconductor light emitting device chip; Covering an upper surface of the reflector and an upper surface of the semiconductor light emitting device chip with an encapsulant; Partially removing the lower part of the plate such that the groove is exposed toward the lower surface of the plate; And Cutting the plate and the encapsulant together along a predetermined boundary of the semiconductor light emitting device. The method according to claim 9, In the step of preparing a plate, a method for manufacturing a semiconductor light emitting device, characterized in that the filler is provided in the groove. In the backlight unit, A light guide plate for guiding light incident on one side to the upper surface; A circuit board lying on one side of the light guide plate; And Arranged to face the side with a gap and a gap therebetween, and comprises a first conductive portion and a second conductive portion electrically separated by the gap, and formed in a hexahedron shape having an upper surface, a lower surface, a front surface, a rear surface, a left surface and a right surface. Metal substrate, A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes A semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, and fixed to an upper surface of the metal substrate; An encapsulation part is formed on the upper surface side of the metal substrate to cover the semiconductor light emitting device chip. The first and second conductive parts facing the upper surface of the circuit board are fixed to the upper surface of the circuit board so that the front or rear surface of the metal substrate faces the upper surface of the circuit board and the upper surface of the metal substrate faces one side of the light guide plate. And a semiconductor light emitting device electrically connected to the circuit board through the front surface or the rear surface of each conductive portion. The method according to claim 11, And the metal substrate has a larger dimension between the upper and lower surfaces than the dimension between the front and rear surfaces. The method according to claim 11, The semiconductor light emitting device chip has a long side and a short side, and the backlight unit is placed on the upper surface of the metal substrate so that the long side extends in the left and right directions of the metal substrate. The method according to claim 11, A backlight unit, characterized in that the filler is provided in the gap. The method according to claim 14, A backlight unit, wherein the filler contains phosphors. The method according to claim 11, A backlight unit, characterized in that the circumferential surfaces (front, rear, left and right surfaces) of the metal substrate and the circumferential surfaces of the encapsulation portion are continuously connected. The method according to claim 16, A circumferential surface (front, back, left and right sides) of the metal substrate and the circumferential surface of the encapsulation portion are backlit surfaces. The method according to claim 11, The semiconductor light emitting device chip is positioned over the gap. The method according to claim 11, The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are located below. The first electrode is bonded to the upper surface of the first conductive portion, The second electrode is bonded to the upper surface of the second conductive portion, the backlight unit. The method according to claim 19, The semiconductor light emitting device chip includes a bonding bonding pad disposed under the first electrode and the second electrode, respectively, and is bonded to the metal substrate by a Jewish bonding method. The method according to claim 11, The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are located thereon. The first electrode and the second electrode are respectively electrically connected to the first conductive portion and the second conductive portion by a wire. The method according to claim 11, A backlight unit, wherein the encapsulation portion contains a phosphor. In the backlight unit, A light guide plate for guiding light incident on one side to the upper surface; A circuit board lying on one side of the light guide plate; And It is arranged in the form of a hexahedron having a top, a bottom, a front, a back, a left side and a right side, including a gap, and a first conductive portion and a second conductive portion disposed to face the side with the gap therebetween and electrically separated by the gap. Metal substrate formed, A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes A semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the semiconductor light emitting device chip being fixed to an upper surface of the metal substrate; A reflector formed to surround the semiconductor light emitting device chip on the upper surface of the metal substrate; An encapsulation portion formed to cover an upper surface of the reflecting portion and an upper surface of the semiconductor light emitting device chip; The first and second conductive parts facing the upper surface of the circuit board are fixed to the upper surface of the circuit board so that the front or rear surface of the metal substrate faces the upper surface of the circuit board and the upper surface of the metal substrate faces one side of the light guide plate. And a semiconductor light emitting device electrically connected to the circuit board through the front surface or the rear surface of each conductive portion.

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