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WO2013140622A1 - Module de pile solaire - Google Patents

Module de pile solaire Download PDF

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Publication number
WO2013140622A1
WO2013140622A1 PCT/JP2012/057593 JP2012057593W WO2013140622A1 WO 2013140622 A1 WO2013140622 A1 WO 2013140622A1 JP 2012057593 W JP2012057593 W JP 2012057593W WO 2013140622 A1 WO2013140622 A1 WO 2013140622A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
electrode
cell module
module according
covering material
Prior art date
Application number
PCT/JP2012/057593
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English (en)
Japanese (ja)
Inventor
平　茂治
志敦 寺中
Original Assignee
三洋電機株式会社
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Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to PCT/JP2012/057593 priority Critical patent/WO2013140622A1/fr
Publication of WO2013140622A1 publication Critical patent/WO2013140622A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell module.
  • the solar cell includes an electrode on the photoelectric conversion unit in order to collect carriers generated by light reception.
  • a wiring material is attached to a part of an electrode to electrically connect a plurality of solar cells, and the solar cells are covered with a covering material such as a glass substrate to form a module (see, for example, Patent Document 1). .
  • the covering material prevents, for example, damage to the solar cell and suppresses moisture and the like from acting on the solar cell.
  • a material having a high water vapor permeability such as a resin film may be used as a covering material.
  • the electrode structure is arbitrarily set, long-term reliability may be impaired. For this reason, it is required to employ an appropriate electrode structure in accordance with the moisture content in the module to suppress deterioration of the photoelectric conversion characteristics.
  • a solar cell module includes a solar cell and a covering material that covers the solar cell, and the solar cell includes a photoelectric conversion unit and an electrode configured by a binder and a conductive filler on the photoelectric conversion unit.
  • the coating material has a water vapor permeability to the solar cell in the thickness direction of 0.1 g / m 2 / day or more, and at least part of the electrode surface has a Raman spectrum wavelength of 1500 to 1700 cm ⁇ 1. Have at least one specific peak.
  • a solar cell module having excellent long-term reliability can be provided.
  • FIG. 3 is a cross-sectional view taken along line BB in FIG. 2, illustrating an example of an electrode cross-sectional structure.
  • FIG. 3 is a cross-sectional view taken along line BB in FIG. 2, illustrating another example of the electrode cross-sectional structure.
  • the solar cell module which is an example of embodiment of this invention, it is a figure which shows an example of the Raman spectrum of an electrode surface.
  • the solar cell module which is an example of embodiment of this invention, it is a figure which shows the result of a moisture resistance test.
  • the solar cell module which is an example of embodiment of this invention it is a figure which shows the result of a moisture resistance test.
  • the solar cell module 10 which is an example of the embodiment of the present invention will be described in detail below with reference to the drawings.
  • the drawings referred to in the embodiments are schematically described, and the dimensional ratios of the components drawn in the drawings may be different from the actual products. Specific dimensional ratios and the like should be determined in consideration of the following description.
  • FIG. 1 is a cross-sectional view showing a part of the solar cell module 10.
  • FIG. 2 is a plan view of the solar cell 11 applied to the solar cell module 10 as seen from the light receiving surface side.
  • FIG. 3 is a view showing a part of a cross section taken along the line AA of FIG. 2, in which the wiring member 14 is omitted.
  • the solar cell module 10 includes a plurality of solar cells 11, a first coating material 12 disposed on the light receiving surface side of the solar cell 11, and a second coating material 13 disposed on the back surface side of the solar cell 11.
  • the plurality of solar cells 11 are sandwiched between the first covering material 12 and the second covering material 13.
  • the solar cell module 10 includes a wiring member 14 that electrically connects the solar cells 11, a transition wiring member that connects the wiring members 14, a frame, and a terminal box.
  • the solar cell 11 includes a photoelectric conversion unit 20 that generates carriers by receiving sunlight, a first electrode 30 that is a light-receiving surface electrode formed on the light-receiving surface of the photoelectric conversion unit 20, and the photoelectric conversion unit 20. And a second electrode 40 that is a back electrode formed on the back surface.
  • carriers generated by the photoelectric conversion unit 20 are collected by the first electrode 30 and the second electrode 40.
  • the “light receiving surface” means a surface on which sunlight mainly enters from the outside of the solar cell 11
  • the “back surface” means a surface opposite to the light receiving surface. For example, more than 50% to 100% of the sunlight incident on the solar cell 11 enters from the light receiving surface side.
  • the photoelectric conversion unit 20 includes a substrate 21 made of a semiconductor material such as crystalline silicon (c-Si), gallium arsenide (GaAs), or indium phosphorus (InP).
  • a substrate 21 made of a semiconductor material such as crystalline silicon (c-Si), gallium arsenide (GaAs), or indium phosphorus (InP).
  • c-Si crystalline silicon
  • GaAs gallium arsenide
  • InP indium phosphorus
  • the substrate 21 an n-type single crystal silicon substrate is particularly suitable.
  • the light receiving surface and the back surface of the substrate 21 have a texture structure (not shown) having an uneven height of about 1 ⁇ m to 15 ⁇ m.
  • an amorphous silicon layer 22 and a transparent conductive layer 23 made of a light-transmitting conductive oxide (TCO) mainly composed of indium oxide or the like are formed in this order.
  • An amorphous silicon layer 24 and a transparent conductive layer 25 are sequentially formed on the back surface of the substrate 21.
  • the amorphous silicon layer 22 has a layer structure in which, for example, an i-type amorphous silicon layer and a p-type amorphous silicon layer are sequentially formed.
  • the amorphous silicon layer 24 has a layer structure in which, for example, an i-type amorphous silicon layer and an n-type amorphous silicon layer are sequentially formed.
  • the first electrode 30 includes a plurality of (for example, 50) fingers 31 and a plurality of (for example, two) bus bars 32.
  • the finger 31 is a thin line electrode formed over a wide range on the light receiving surface in order to collect carriers generated by the photoelectric conversion unit 20.
  • the bus bar 32 is an electrode that collects carriers from the fingers 31, and is electrically connected to all the fingers 31.
  • the second electrode 40 is also composed of a plurality of (for example, 250) fingers 41 and a plurality of (for example, two) bus bars 42, and has the same electrode arrangement as the first electrode 30.
  • the first covering material 12 has a filler 12 b that closes the gap between the glass substrate 12 a and the solar cell 11 and seals the solar cell 11.
  • a light-transmitting resin can be used, and an olefin resin obtained by polymerizing at least one ⁇ -olefin, such as an ethylene-propylene copolymer or an ethylene-vinyl acetate copolymer.
  • a resin mainly composed of coalescence (EVA) or the like is preferable.
  • EVA crosslinked with an organic peroxide or the like is particularly preferable.
  • the filler 12b contains, for example, 50% by weight or more (50 to 100% by weight) of crosslinked EVA with respect to the total weight.
  • the resin film 13a For the second covering material 13, it is preferable to use a resin film 13a from the viewpoints of cost reduction and weight reduction.
  • the resin film 13a include films made of olefin resins, styrene resins, polyester resins, and the like. Among these, a polyester resin film is preferable, and a polyethylene terephthalate (PET) film is particularly preferable. Since PET film is excellent in translucency, it is also suitable for applications that assume light reception from the back side.
  • a filler 13 b containing 50% by weight or more of crosslinked EVA is provided in the gap between the second covering material 13 and the solar cell 11, as in the case of the first covering material 12.
  • the resin film 13a can be provided with a gas barrier layer 13c in order to reduce the water vapor permeability described later.
  • the gas barrier layer 13c include a layer made of a resin or a metal compound (silica or alumina) having a lower water vapor permeability than the PET film.
  • a silica layer having a thickness of submicron order.
  • the silica layer can be provided on one side of the PET film by vapor deposition. In this case, it is preferable to laminate the silica layer with another PET film to obtain a resin film 13a having a laminated structure.
  • Wiring member 14 connects solar cells 11 arranged adjacent to each other.
  • One end side of the wiring member 14 is attached to the first electrode 30 (bus bar 32) of one solar cell 11 among the solar cells 11 arranged adjacent to each other.
  • the other end side of the wiring member 14 is connected to the second electrode 40 (bus bar 42) of the other solar cell 11. That is, the wiring member 14 bends in the thickness direction of the solar cell module 10 between the adjacent solar cells 11 and connects the adjacent solar cells 11 in series.
  • the wiring member 14 is attached using, for example, a non-conductive adhesive or a conductive adhesive containing a conductive filler such as silver (Ag).
  • a string of solar cells 11 obtained by connecting the wiring material 14 is made of a glass substrate 12 a, a resin film 13 a (for example, a PET film), and sheet-like fillers 12 b and 13 b (for example, an EVA sheet). ).
  • the glass substrate 12a / EVA sheet / string / EVA sheet / PET film are arranged in this order on the heater and heated to about 150 ° C. in a vacuum state. Thereafter, heating is continued while pressing the module material against the heater under atmospheric pressure to crosslink EVA.
  • a solar cell module 10 is obtained by attaching a frame or the like.
  • the thickness of the first coating material 12 and the second coating material 13 and the water vapor permeability in the thickness direction in the solar cell module 10 will be described below.
  • the water vapor permeability can be measured under the following conditions. Apparatus: Water vapor permeability tester (Techno Eye "DELTAPERRM”) Temperature / humidity: 40 ° C / 90%
  • the thickness t1 of the first covering material 12 is, for example, about 0.5 to 3 mm. Most of the thickness t1 is the thickness of the glass substrate 12a. The thickness of the glass substrate 12a is preferably about 0.5 to 3 mm, and the thickness of the filler 12b is preferably about 50 to 200 ⁇ m.
  • the water vapor permeability in the thickness direction that is, the water vapor permeability from the surface of the glass substrate 12a to the solar cell 11 has a value significantly smaller than 0.1 g / m 2 / day.
  • the thickness t2 of the second covering material 13 is, for example, about 100 to 500 ⁇ m.
  • the thickness of the resin film 13a is preferably about 50 to 300 ⁇ m, and the thickness of the filler 12b is preferably about 50 to 200 ⁇ m.
  • the second coating material 13 has a water vapor permeability in the thickness direction of 0.1 g / m 2 / day or more.
  • the water vapor permeability is about 10 g / m 2 / day, and when the thickness is doubled (300 ⁇ m), the thickness is approximately 1 ⁇ 2 times (5 g / m 2 / day).
  • an EVA sheet having a thickness of about 50 to 200 ⁇ m has a water vapor permeability of about 50 g / m 2 / day.
  • the thickness of the resin film 13a is more preferably 50 to 200 ⁇ m, and particularly preferably 75 to 150 ⁇ m.
  • the water vapor permeability in the thickness direction of the second covering material 13 is about 0.1 to 100 g / m 2 / day.
  • the gas barrier layer 13c When a silica layer having a thickness of the order of submicron is provided as the gas barrier layer 13c, the water vapor permeability can be easily adjusted in the range of about 0.1 to 10 g / m 2 / day.
  • FIG. 4 and 5 show a cross-sectional structure of the finger 31.
  • FIG. FIG. 4 is a diagram showing a part of the cross section taken along line BB in FIG. 2, and shows a cross section obtained by cutting the solar cell 11 in the thickness direction perpendicular to the fingers 31 and 41.
  • FIG. 5 shows a modification of the embodiment shown in FIG.
  • Both the finger 31 and the bus bar 32 are composed of an insulating binder 33 and a conductive filler 34. It is preferable that the conductive filler 34 is dispersed substantially uniformly in the binder 33. The conductive fillers 34 are in contact with each other to form a conductive path, for example.
  • the electrode material may contain a small amount of an additive such as a filler dispersant.
  • the electrode material and composition may be changed between the fingers and the bus bar, and between the first electrode 30 and the second electrode 40, but in the present embodiment, the fingers 31, 41 and the bus bars 32, 42 (hereinafter collectively referred to as these). Are sometimes made of the same material and the same composition.
  • the binder 33 most of the surface of the finger 31 is covered with the binder 33, and only a part of the conductive filler 34 is exposed from the surface of the finger 31.
  • the ratio at which the conductive filler 34 is exposed from the surface of the finger 31 can be adjusted, for example, by changing the mixing ratio of the binder 33 and the conductive filler 34.
  • a resin coating layer 35 that covers the surface of the finger 31 is provided.
  • the resin coating layer 35 is made of, for example, only the same resin as the binder 33 and covers the conductive filler 34 exposed from the surface of the finger 31.
  • the resin coating layer 35 can be formed on the finger 31 by the same method as the finger 31 or by another coating method.
  • the resin coating layer 35 is preferably provided only on the fingers 31 and 41.
  • the collector electrode is preferably formed by a screen printing method.
  • a paste containing an electrode material is transferred onto the photoelectric conversion unit 20 by using a screen plate having an opening corresponding to the shape of the collector electrode and a squeegee. Then, the transferred paste is solidified by heating or the like to form a collecting electrode.
  • a heat curing type conductive paste in which a binder 33 as an electrode material and a conductive filler 34 are mixed in a solvent is suitable.
  • the conductive filler 34 for example, metal particles such as silver (Ag), copper (Cu), nickel (Ni), aluminum (Al), silver-coated copper, silver-coated aluminum, carbon, or a mixture thereof is used. be able to.
  • the conductive filler 34 include particles having a spherical shape, a spindle shape, a needle shape, a flake shape (flaky shape), and the like, and in particular, a flaky particle having an average particle size of 3 to 20 ⁇ m and an average particle size of 0. It is preferable to use spherical particles of 5 to 1 ⁇ m in combination.
  • the average particle diameter means a 50% cumulative value when the arithmetic average value of the major axis and the minor axis is measured by the microtrack type particle size distribution measuring method.
  • the content of Ag particles is preferably 70 to 90% by weight, more preferably 75 to 87% by weight, and particularly preferably 80 to 85% by weight based on the total weight of the electrode material.
  • the content of the binder 33 is preferably 10 to 30% by weight, more preferably 13 to 25% by weight, and particularly preferably 15 to 20% by weight with respect to the total weight of the electrode material.
  • thermosetting resin such as an epoxy resin, a urethane resin, a urea resin, an acrylic resin, an imide resin, or a phenol resin, or a modified product or a mixture thereof can be used.
  • the thermosetting resin becomes a binder 33 due to the curing reaction of the components by the heat treatment.
  • the curing reaction of the thermosetting resin proceeds even at a low temperature, it is preferable to block the functional groups of the constituent components.
  • the isocyanate group can be protected using a blocking agent such as imidazoles, phenols, and oximes.
  • Such thermosetting resins may be those classified into a plurality of groups (for example, resins that can be classified into both epoxy resins and urethane resins).
  • thermosetting resin at least one thermosetting resin (hereinafter referred to as “specific thermosetting resin”) selected from the group consisting of an epoxy resin, a urethane resin, and an acrylic resin is used as a binder. It is preferable to contain 80% by weight or more based on the total weight of 33. For example, it is preferable to use an epoxy resin as a main component (50% by weight or more) among the specific thermosetting resins. It is also preferable that the specific thermosetting resin is contained in an amount of 80 to 95.5% by weight and the silicone resin is contained in an amount of 0.5 to 20% by weight. Examples of the silicone resin include straight silicone resins such as methyl and methylphenyl, modified silicone resins modified with epoxy resins, alkyd resins, ester resins, acrylic resins, and the like.
  • the epoxy resins include alicyclic epoxy resins, chain epoxy resins, bisphenol A type epoxy resins, epoxy phenol novolac type resins, polyglycidyl ether type epoxy resins, polyalkylene ether type epoxy resins, epoxy acrylate resins, and fatty acid-modified resins.
  • examples thereof include an epoxy resin, a urethane-modified epoxy resin, and a silicone-modified epoxy resin.
  • the curing agent for example, imidazoles and tertiary amines can be used.
  • component A component having an epoxy equivalent of 1000 or less
  • component B component having an epoxy equivalent of 1500 or higher
  • the weight mixing ratio of the A component and the B component is preferably 30 to 90% by weight for the A component (10 to 70% by weight for the B component).
  • Examples of the urethane resin include resins composed of diisocyanate and polyol.
  • Examples of the diisocyanate include aromatic diisocyanates such as tolylene diisocyanate, diphenylmethane diisocyanate, polymethylene polyphenyl polyisocyanate, tolidine diisocyanate, xylylene diisocyanate, and naphthalene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, hydrogenated xylylene diisocyanate, and dicyclohexyl.
  • aromatic diisocyanates such as tolylene diisocyanate, diphenylmethane diisocyanate, polymethylene polyphenyl polyisocyanate, tolidine diisocyanate, xylylene diisocyanate, and naphthalene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, hydrogenated
  • Aliphatic diisocyanates such as methane diisocyanate, octamethylene diisocyanate, and trimethylhexamethylene diisocyanate can be used.
  • polyol for example, polyether polyols, polyester polyols, polycarbonate polyols and the like can be used.
  • acrylic resins examples include (meth) acrylic acid esters and ethylenically unsaturated monomers (for example, acrylic acid) having a crosslinkable functional group (for example, carboxyl group, hydroxyl group, amino group, methylol group, epoxy group).
  • a crosslinkable functional group for example, carboxyl group, hydroxyl group, amino group, methylol group, epoxy group.
  • An aromatic vinyl monomer such as styrene may be copolymerized.
  • the solvent contained in the conductive paste it is preferable to use a high boiling point solvent such as ethyl carbitol acetate, butyl carbitol acetate, terpineol, or the like.
  • the solvent is volatilized and removed when the conductive paste transferred onto the photoelectric conversion unit 20 is heated.
  • the heating temperature is approximately 200 ° C., although it varies depending on the curing conditions of the binder 33 and the like.
  • FIG. 6 shows an example of a Raman spectrum (solid line) on the surface of the finger 31.
  • a two-dot chain line in FIG. 6 is a Raman spectrum of a comparison module described later.
  • similar Raman spectra are obtained for the other collector electrodes.
  • the Raman spectrum of the surface of the finger 31 has a peak Z that is at least one specific peak at wavelengths of 1500 to 1700 cm ⁇ 1 .
  • a peak Z is defined as a scattering intensity (also called signal intensity) at the peak top that is 10% or more higher than the scattering intensity on the long wavelength side of 50 cm ⁇ 1 from the wavelength of the peak top.
  • one peak Z exists at a wavelength of 1500 to 1700 cm ⁇ 1 .
  • the peak Z has a peak top wavelength of 1650 cm ⁇ 1 , and the peak top scattering intensity Ip is at least 10% higher than the scattering intensity Ik on the long wavelength side (1700 cm ⁇ 1 ) 50 cm ⁇ 1 from the peak top wavelength. It has become.
  • the Raman spectrum of the finger 31 can be measured under the following conditions. Apparatus: Microscopic laser Raman spectrometer ("InVia Reflex" manufactured by Renishaw) Excitation light source; laser light with a wavelength of 785 nm Measurement mode: Extension mode, 20-second exposure
  • the peak Z is an important factor that affects the photoelectric conversion characteristics of the solar cell module 10 as will be described in detail later.
  • the wavelength of the peak top is not particularly limited as long as it is in the range of 1500 to 1700 cm ⁇ 1 . Further, the number of peaks Z is not particularly limited, and a plurality of peaks Z may exist.
  • the scattering intensity Ip is preferably higher from the viewpoint of improving long-term reliability. For example, the scattering intensity Ip is preferably 15% or more higher than the scattering intensity Ik, more preferably 20% or more, and particularly preferably 30% or more. .
  • the peak Z is more likely to appear as the proportion of the binder 33 on the electrode surface increases, and the scattering intensity Ip increases.
  • the scattering intensity Ip increases as the proportion of the conductive filler 34 exposed from the electrode surface decreases.
  • Such an electrode structure can be formed using, for example, a conductive paste in which the content of Ag particles is 80 to 85% by weight with respect to the total weight of the electrode material as described above.
  • the bottom wavelength is not particularly limited as long as it is in the range of 800 to 1200 cm ⁇ 1 .
  • the ratio of the scattering intensity Ib to the scattering intensity Ip tends to increase as the degree of cure of the binder 33 increases. That is, it is suggested that the degree of cure of the binder 33 constituting the collector electrode is higher when Ib / Ip is 1.0 than when Ib / Ip is 0.7.
  • FIG. 7 the result of the moisture resistance test in the solar cell module 10 is shown.
  • the test time was 2000 hours under the conditions of a constant temperature and humidity furnace with a temperature of 85 ° C. and a humidity of 85%.
  • the horizontal axis represents the test time, and the vertical axis represents the deterioration improvement rate.
  • solar cell modules 10 having Ib / Ip of about 0.70 ( ⁇ ), about 0.75 ( ⁇ ), about 0.80 ( ⁇ ), and about 1.00 ( ⁇ ), respectively.
  • the result of the moisture resistance test in is shown.
  • the horizontal axis represents the test time
  • the vertical axis represents the FF change rate. Details are as follows.
  • the deterioration improvement rate means that the Raman spectrum of the surfaces of the first electrode 30 and the second electrode 40 has a fill factor FF 10 of the solar cell module 10 having a peak Z at a wavelength of 1500 to 1700 cm ⁇ 1 and no peak Z.
  • FF 10 / FF 50 a comparative solar cell module
  • FIG. 6 shows a Raman spectrum of the comparison module.
  • the comparison module was manufactured by reducing the weight of the binder 33 (epoxy resin) to 2/3 with respect to the solar cell module 10 having Ib / Ip of about 0.70.
  • the solar cell module 10 having Ib / Ip of about 0.70, about 0.75, about 0.80, and about 1.00 was produced by changing only the curing time of the binder 33.
  • the heat treatment temperatures are all 200 ° C., and the curing treatment times are 25 minutes, 35 minutes, 45 minutes, and 90 minutes in this order.
  • the Raman spectra of the surfaces of the first electrode 30 and the second electrode 40 have a peak Z at a wavelength of 1500 to 1700 cm ⁇ 1
  • the photoelectric spectrum is smaller than that without the peak Z. Conversion characteristics are less likely to deteriorate. That is, it means that the solar cell module 10 has higher moisture resistance than the comparative module. This is because the higher the moisture content, the more easily the metal of the electrode is ionized and diffuses.
  • the electrode having the peak Z the coverage of the conductive filler 34 by the binder 33 and the resin coating layer 35 is high, and the metal ions are photoelectric. This is presumed to be difficult to diffuse into the converter 20. In particular, the difference between the two increases as the test time increases.
  • both the first covering material 12 and the second covering material 13 have a water vapor permeability of less than 0.1 g / m 2 / day, diffusion of metal ions hardly occurs in the first place, and the solar cell module 10 and the comparison module The deterioration improvement rate was a value close to 1.
  • the lower the Ib / Ip the smaller the decrease in the FF change rate and the higher the moisture resistance. In particular, it has good moisture resistance when Ib / Ip ⁇ 0.8. That is, the higher the degree of cure of the binder 33, the better the moisture resistance.
  • the results of the moisture resistance test shown in FIGS. 7 and 8 indicate that the performance evaluation of the solar cell 11 and the solar cell module 10 including the solar cell 11 can be performed using the Raman spectrum of the collector electrode.
  • the Raman spectrum of the surface of the collector electrode is measured, and the moisture resistance performance of the solar cell 11 can be evaluated based on the presence or absence of the peak Z at a wavelength of 1500 to 1700 cm ⁇ 1 of the obtained spectrum.
  • the peak Z is confirmed in the Raman spectrum of the collector electrode, it can be evaluated that the solar cell can produce a module having excellent long-term reliability even in an environment with a high moisture content.
  • the peak Z cannot be confirmed it can be evaluated that the solar cell cannot be used in an environment with a high water content.
  • the moisture resistance performance of the solar cell 11 can be evaluated based on the ratio between the scattering intensity Ip at the peak top at the peak Z and the scattering intensity Ib at the bottom at a wavelength of Raman spectrum of 800 to 1200 cm ⁇ 1 .
  • a ratio can also be used to know the degree of cure of the binder 33.
  • the solar cell in the Raman spectrum of the collector electrode, when Ib / Ip ⁇ 0.7, preferably ⁇ 0.8, the solar cell can produce a module having excellent long-term reliability even in an environment with a high water content. Can be evaluated.
  • the solar cell module 10 in the configuration using the coating material (second coating material 13) having a water vapor permeability of 0.1 g / m 2 / day or more, deterioration of photoelectric conversion characteristics is suppressed. be able to. And excellent long-term reliability can be realized.
  • the Raman spectra of the fingers 31 and 41 may have a peak Z.
  • the scattering intensity Ip of the peak Z related to the fingers 31 and 41 may be higher than the scattering intensity Ip of the peak Z related to the bus bars 32 and 42.
  • Such a configuration can be realized, for example, by providing the resin coating layer 35 limited to the fingers 31 and 41 as described above. Thereby, deterioration of a photoelectric conversion characteristic can be suppressed, maintaining the favorable electrical connection with the wiring material 14.
  • the Raman spectrum of the second electrode 40 may have a peak Z.
  • the Raman spectrum of the finger 41 may have the peak Z, and the scattering intensity Ip of the peak Z related to the finger 41 may be higher than the scattering intensity Ip of the peak Z related to other electrodes.
  • the reason for adopting such a configuration is that the portion having a higher moisture content in the module is more likely to deteriorate the photoelectric conversion characteristics. That is, since the second covering material 13 close to the finger 41 has a higher water vapor permeability than the first covering material 12, it is effective to increase the scattering intensity Ip related to the finger 41.
  • Such a photoelectric conversion unit includes, for example, an i-type amorphous silicon layer, an n-type amorphous silicon layer, and a transparent conductive layer formed in this order on the light-receiving surface side of an n-type single crystal silicon substrate.
  • a p-type region composed of an i-type amorphous silicon layer and a p-type amorphous silicon layer, an i-type amorphous silicon layer, and an n-type amorphous silicon layer are formed. And an n-type region.
  • a transparent conductive layer and an electrode are provided on the p-type region and the n-type region, respectively.

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Abstract

La présente invention concerne un module (10) de pile solaire, qui comprend : une pile solaire (11) qui contient, sur une unité (20) de conversion photoélectrique, une première électrode (30) et une seconde électrode (40), constituées d'un liant (33) et d'une charge (34) conductrice ; et un premier matériau (12) couvrant et un second matériau couvrant (13), qui recouvrent la pile solaire (11). Le second matériau (13) couvrant présente un taux de transmission de la vapeur d'eau de 0,1 g/m²/jour minimum, dans la direction de l'épaisseur, jusqu'à la pile solaire (11). La première électrode (30) et la seconde électrode (40) présentent au moins un pic spécifique, à une longueur d'onde allant de 1 500 cm-1 à 1 700 cm-1, dans le spectre de Raman des surfaces associées.
PCT/JP2012/057593 2012-03-23 2012-03-23 Module de pile solaire WO2013140622A1 (fr)

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JP2017139351A (ja) * 2016-02-04 2017-08-10 京都エレックス株式会社 太陽電池素子の製造方法および太陽電池素子
JP6243581B1 (ja) * 2016-12-01 2017-12-06 信越化学工業株式会社 高光電変換効率太陽電池セル及び高光電変換効率太陽電池セルの製造方法

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JPH05102511A (ja) * 1991-10-08 1993-04-23 Canon Inc 太陽電池モジユール
JPH05110124A (ja) * 1991-10-18 1993-04-30 Canon Inc 太陽電池
JPH06196741A (ja) * 1992-12-24 1994-07-15 Canon Inc 太陽電池モジュール及びその製造方法並びにその設置構造
JPH0794767A (ja) * 1993-09-21 1995-04-07 Canon Inc 光電変換素子
JP2007207957A (ja) * 2006-01-31 2007-08-16 Sanyo Electric Co Ltd 光電変換素子

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JPH05102511A (ja) * 1991-10-08 1993-04-23 Canon Inc 太陽電池モジユール
JPH05110124A (ja) * 1991-10-18 1993-04-30 Canon Inc 太陽電池
JPH06196741A (ja) * 1992-12-24 1994-07-15 Canon Inc 太陽電池モジュール及びその製造方法並びにその設置構造
JPH0794767A (ja) * 1993-09-21 1995-04-07 Canon Inc 光電変換素子
JP2007207957A (ja) * 2006-01-31 2007-08-16 Sanyo Electric Co Ltd 光電変換素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017139351A (ja) * 2016-02-04 2017-08-10 京都エレックス株式会社 太陽電池素子の製造方法および太陽電池素子
JP6243581B1 (ja) * 2016-12-01 2017-12-06 信越化学工業株式会社 高光電変換効率太陽電池セル及び高光電変換効率太陽電池セルの製造方法
WO2018100596A1 (fr) * 2016-12-01 2018-06-07 信越化学工業株式会社 Cellule solaire ayant une efficacité de conversion photoélectrique élevée et procédé de production de cellule solaire ayant une efficacité de conversion photoélectrique élevée
EP3355361A4 (fr) * 2016-12-01 2019-02-06 Shin-Etsu Chemical Co., Ltd Cellule solaire ayant une efficacité de conversion photoélectrique élevée et procédé de production de cellule solaire ayant une efficacité de conversion photoélectrique élevée
CN110024136A (zh) * 2016-12-01 2019-07-16 信越化学工业株式会社 高光电变换效率太阳能电池胞及高光电变换效率太阳能电池胞的制造方法
US10700223B2 (en) 2016-12-01 2020-06-30 Shin-Etsu Chemical Co., Ltd. High photoelectric conversion efficiency solar battery cell and method for manufacturing high photoelectric conversion solar battery cell
CN110024136B (zh) * 2016-12-01 2022-10-04 信越化学工业株式会社 高光电变换效率太阳能电池胞及高光电变换效率太阳能电池胞的制造方法

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