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WO2012141431A3 - 네트워크 구조의 나노선을 구비한 나노선 센서 - Google Patents

네트워크 구조의 나노선을 구비한 나노선 센서 Download PDF

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Publication number
WO2012141431A3
WO2012141431A3 PCT/KR2012/001964 KR2012001964W WO2012141431A3 WO 2012141431 A3 WO2012141431 A3 WO 2012141431A3 KR 2012001964 W KR2012001964 W KR 2012001964W WO 2012141431 A3 WO2012141431 A3 WO 2012141431A3
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nanowire
network structure
sensor
source electrode
repeated
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PCT/KR2012/001964
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English (en)
French (fr)
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WO2012141431A2 (ko
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이정수
정윤하
임태욱
백창기
김성호
김기현
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포항공과대학교 산학협력단
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Priority to US14/111,727 priority Critical patent/US9099543B2/en
Priority to CN201280018389.1A priority patent/CN103635795B/zh
Publication of WO2012141431A2 publication Critical patent/WO2012141431A2/ko
Publication of WO2012141431A3 publication Critical patent/WO2012141431A3/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/06—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/483—Physical analysis of biological material
    • G01N33/487—Physical analysis of biological material of liquid biological material
    • G01N33/48707—Physical analysis of biological material of liquid biological material by electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
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  • Biochemistry (AREA)
  • Biomedical Technology (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Urology & Nephrology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
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Abstract

본 발명은 반복되는 패턴을 갖는 네트워크 구조의 나노선을 사용함으로써 높은 효율과 구조적 안정성을 얻을 수 있는 네트워크 구조의 나노선을 구비한 나노선 센서에 관한 것으로, 기판 상부에 형성된 소스 전극 및 드레인 전극, 상기 소스 전극 및 드레인 전극 사이에 형성되며, 교차점의 패턴이 반복되는 네트워크 구조로 형성된 나노선 및 상기 나노선에 고정되며 외부에서 유입되는 대상물질과 선택적으로 반응하는 탐지물질을 포함하는 것을 특징으로 한다.
PCT/KR2012/001964 2011-04-14 2012-03-19 네트워크 구조의 나노선을 구비한 나노선 센서 WO2012141431A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/111,727 US9099543B2 (en) 2011-04-14 2012-03-19 Nanowire sensor having nanowire of network structure
CN201280018389.1A CN103635795B (zh) 2011-04-14 2012-03-19 具有网络结构纳米线的纳米线传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110034860A KR101263188B1 (ko) 2011-04-14 2011-04-14 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법
KR10-2011-0034860 2011-04-14

Publications (2)

Publication Number Publication Date
WO2012141431A2 WO2012141431A2 (ko) 2012-10-18
WO2012141431A3 true WO2012141431A3 (ko) 2013-03-07

Family

ID=47009790

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/001964 WO2012141431A2 (ko) 2011-04-14 2012-03-19 네트워크 구조의 나노선을 구비한 나노선 센서

Country Status (4)

Country Link
US (1) US9099543B2 (ko)
KR (1) KR101263188B1 (ko)
CN (1) CN103635795B (ko)
WO (1) WO2012141431A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106290475A (zh) * 2016-08-02 2017-01-04 北京大学 一种自选择修饰的纳米线生物传感器及其制备方法

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* Cited by examiner, † Cited by third party
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KR101444260B1 (ko) * 2012-12-05 2014-09-26 포항공과대학교 산학협력단 3차원 적층 구조의 나노선을 갖춘 나노선 전계효과 센서 및 그 제조방법
KR101641085B1 (ko) * 2014-08-20 2016-07-20 포항공과대학교 산학협력단 수직 미세유체 제어 장치를 이용한 나노 그물망 전계효과 센서 및 그 제조방법.
KR101659416B1 (ko) 2015-02-26 2016-09-30 포항공과대학교 산학협력단 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법
WO2017070030A1 (en) 2015-10-21 2017-04-27 Massachusetts Institute Of Technology Nanowire fet imaging system and related techniques
KR101720281B1 (ko) * 2016-02-05 2017-04-10 주식회사 아이엠헬스케어 나노 와이어를 감지 채널로 이용하고 멤브레인을 유동 채널로 이용하는 ｆｅｔ 기반 바이오 센서, 및 이를 이용한 검출 방법
CN108872151B (zh) * 2017-09-29 2023-06-16 郑州大学 一种基于t形对和纳米线对的光学传感器
US10788375B2 (en) * 2017-12-07 2020-09-29 Tower Semiconductor Ltd. Apparatus, system and method of a temperature sensor
US11768262B2 (en) 2019-03-14 2023-09-26 Massachusetts Institute Of Technology Interface responsive to two or more sensor modalities
KR20210020461A (ko) 2019-08-14 2021-02-24 포항공과대학교 산학협력단 3차원 적층 구조의 나노선을 구비한 나노선 열전소자 및 이의 제조방법
KR102492256B1 (ko) * 2020-09-01 2023-01-25 포항공과대학교 산학협력단 표적물질 검출 센서 제조방법
WO2022231146A1 (ko) * 2021-04-29 2022-11-03 포항공과대학교 산학협력단 바이오센서 및 이의 제조 방법
KR102747685B1 (ko) * 2021-04-29 2024-12-27 포항공과대학교 산학협력단 바이오센서 및 이의 제조 방법
KR102711449B1 (ko) * 2021-07-08 2024-09-26 포항공과대학교 산학협력단 바이오센서 및 바이오센서 제조 방법
CN114137377B (zh) * 2021-10-09 2024-07-09 金波 一种目标分子检测晶体管传感器及其制备方法

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Publication number Priority date Publication date Assignee Title
JP2006505806A (ja) * 2002-11-08 2006-02-16 ナノミックス・インコーポレーテッド ナノチューブをベースとする生体分子の電子検知
US20060185980A1 (en) * 2005-02-18 2006-08-24 Hiroshi Fukuda Ceramic sensor and manufacturing method thereof
KR20090065124A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 실리콘 나노선을 이용한 바이오 센서 및 그 제조 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106290475A (zh) * 2016-08-02 2017-01-04 北京大学 一种自选择修饰的纳米线生物传感器及其制备方法

Also Published As

Publication number Publication date
KR20120117231A (ko) 2012-10-24
WO2012141431A2 (ko) 2012-10-18
US20140034907A1 (en) 2014-02-06
CN103635795B (zh) 2016-01-06
US9099543B2 (en) 2015-08-04
KR101263188B1 (ko) 2013-05-10
CN103635795A (zh) 2014-03-12

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