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WO2012099446A3 - 연장된 게이트 전극이 형성된 전계효과 트랜지스터형 신호변환기를 이용한 투명성 이온 감지 센서칩 및 이의 제조방법 - Google Patents

연장된 게이트 전극이 형성된 전계효과 트랜지스터형 신호변환기를 이용한 투명성 이온 감지 센서칩 및 이의 제조방법 Download PDF

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Publication number
WO2012099446A3
WO2012099446A3 PCT/KR2012/000570 KR2012000570W WO2012099446A3 WO 2012099446 A3 WO2012099446 A3 WO 2012099446A3 KR 2012000570 W KR2012000570 W KR 2012000570W WO 2012099446 A3 WO2012099446 A3 WO 2012099446A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensor chip
transistor
gate electrode
manufacturing
effect
Prior art date
Application number
PCT/KR2012/000570
Other languages
English (en)
French (fr)
Other versions
WO2012099446A2 (ko
Inventor
이내응
투이 응우옌뜨엉
김덕진
윤옥자
Original Assignee
성균관대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 성균관대학교 산학협력단 filed Critical 성균관대학교 산학협력단
Publication of WO2012099446A2 publication Critical patent/WO2012099446A2/ko
Publication of WO2012099446A3 publication Critical patent/WO2012099446A3/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/333—Ion-selective electrodes or membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Molecular Biology (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biomedical Technology (AREA)
  • Hematology (AREA)
  • Urology & Nephrology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)

Abstract

본 발명은 전해질의 다양한 이온 농도를 선택적으로 측정할 수 있고, 동시에 투명하게 제조됨으로써 광학적 측정이 가능하여 셀의 거동현상도 측정이 가능하며, 용액에 의한 이온 감지부의 열화를 방지하기 위해 이온 감지부가 트랜지스터의 채널부로부터 연장된 게이트 전극 상에 위치하도록 구성되어 내구성이 향상된 전계효과 트랜지스터형 신호변환기를 이용한 투명성 이온 감지 센서칩 및 이의 제조방법에 관한 것이다.
PCT/KR2012/000570 2011-01-21 2012-01-20 연장된 게이트 전극이 형성된 전계효과 트랜지스터형 신호변환기를 이용한 투명성 이온 감지 센서칩 및 이의 제조방법 WO2012099446A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0006318 2011-01-21
KR20110006318 2011-01-21

Publications (2)

Publication Number Publication Date
WO2012099446A2 WO2012099446A2 (ko) 2012-07-26
WO2012099446A3 true WO2012099446A3 (ko) 2012-12-06

Family

ID=46516275

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000570 WO2012099446A2 (ko) 2011-01-21 2012-01-20 연장된 게이트 전극이 형성된 전계효과 트랜지스터형 신호변환기를 이용한 투명성 이온 감지 센서칩 및 이의 제조방법

Country Status (2)

Country Link
KR (1) KR101359735B1 (ko)
WO (1) WO2012099446A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101581634B1 (ko) * 2015-04-16 2015-12-30 성균관대학교산학협력단 전계효과 트랜지스터를 이용한 자외선 센서 및 이의 제조방법
KR101922500B1 (ko) * 2016-06-22 2018-11-28 한국과학기술연구원 커패시턴스-타입 센서 및 이의 제조 방법
WO2017222313A1 (ko) * 2016-06-22 2017-12-28 한국과학기술연구원 커패시턴스-타입 센서 및 이의 제조 방법
KR102172465B1 (ko) 2018-10-08 2020-10-30 주식회사 엔디디 바이오 감지 장치
KR102308171B1 (ko) * 2019-05-10 2021-10-01 주식회사 엔디디 바이오 감지 장치
KR20210020578A (ko) * 2019-08-16 2021-02-24 동우 화인켐 주식회사 바이오 센서
CN112255290A (zh) * 2020-09-30 2021-01-22 太原理工大学 一种具有水溶液稳定性的柔性生物传感器及其制作方法
CN112255291B (zh) * 2020-09-30 2023-01-10 太原理工大学 一种生物传感器及其制作方法
CN112968058B (zh) * 2021-02-04 2022-07-26 电子科技大学 一种离子调控型自旋波晶体管及其制备方法
CN113340966B (zh) * 2021-06-07 2025-01-28 深圳技术大学 一种电化学三极管生物传感器及其制备方法
KR102816506B1 (ko) * 2021-08-06 2025-06-05 서울대학교산학협력단 비균일 마이크로채널을 포함하는 전기적 특성 측정 장치
CN114076789A (zh) * 2021-11-17 2022-02-22 潍柴动力股份有限公司 用于检测待测物离子活度的离子敏薄膜晶体管及检测方法
CN115096975B (zh) * 2022-06-22 2024-03-05 湘潭大学 具有延栅结构的碳基fet型气体传感器及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162380A (ja) * 2000-11-27 2002-06-07 Matsushita Electric Works Ltd 半導体イオンセンサ
US20040256685A1 (en) * 2001-02-20 2004-12-23 Jung-Chuan Chou Biosensor, method of manufacturing sensing unit thereof, and measuring system
US20050263410A1 (en) * 2004-05-28 2005-12-01 Chung Yuan Christian University Ion-selective electrodes and method of fabricating sensing units thereof
WO2010041805A1 (en) * 2008-10-07 2010-04-15 Electronics And Telecommunications Research Institute Sensing device
KR20100068749A (ko) * 2008-12-15 2010-06-24 한국전자통신연구원 바이오 센서용 트랜지스터의 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1729121A1 (de) * 2005-05-30 2006-12-06 Mettler-Toledo AG Elektrochemischer Sensor
GB0812499D0 (en) * 2008-07-08 2008-08-13 Imp Innovations Ltd Low-voltage thin-film field-effect transistors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162380A (ja) * 2000-11-27 2002-06-07 Matsushita Electric Works Ltd 半導体イオンセンサ
US20040256685A1 (en) * 2001-02-20 2004-12-23 Jung-Chuan Chou Biosensor, method of manufacturing sensing unit thereof, and measuring system
US20050263410A1 (en) * 2004-05-28 2005-12-01 Chung Yuan Christian University Ion-selective electrodes and method of fabricating sensing units thereof
WO2010041805A1 (en) * 2008-10-07 2010-04-15 Electronics And Telecommunications Research Institute Sensing device
KR20100068749A (ko) * 2008-12-15 2010-06-24 한국전자통신연구원 바이오 센서용 트랜지스터의 제조 방법

Also Published As

Publication number Publication date
KR101359735B1 (ko) 2014-02-11
WO2012099446A2 (ko) 2012-07-26
KR20120085211A (ko) 2012-07-31

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