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WO2012076924A1 - Circuit amplificateur radiofréquence et système électronique comprenant ce circuit - Google Patents

Circuit amplificateur radiofréquence et système électronique comprenant ce circuit Download PDF

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Publication number
WO2012076924A1
WO2012076924A1 PCT/IB2010/003412 IB2010003412W WO2012076924A1 WO 2012076924 A1 WO2012076924 A1 WO 2012076924A1 IB 2010003412 W IB2010003412 W IB 2010003412W WO 2012076924 A1 WO2012076924 A1 WO 2012076924A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
peak
input
circuit
carrier
Prior art date
Application number
PCT/IB2010/003412
Other languages
English (en)
Inventor
Jean Jacques Bouny
Original Assignee
Freescale Semiconductors, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductors, Inc. filed Critical Freescale Semiconductors, Inc.
Priority to PCT/IB2010/003412 priority Critical patent/WO2012076924A1/fr
Publication of WO2012076924A1 publication Critical patent/WO2012076924A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/543—A transmission line being used as coupling element between two amplifying stages

Definitions

  • This invention relates to an RF amplifier circuit and an RF communication system comprising such a circuit.
  • the Peak to Average Ratio (PAR) of the signals to be amplified is high and the efficiency of the RF amplifiers is going down if regular class AB amplifiers are used.
  • PAR Peak to Average Ratio
  • Doherty amplifiers with multiple auxiliary or peak amplifiers have already been described and used. Most of them are three way amplifiers, which provide a good trade-off between cost complexity, and performance improvement. In a three way Doherty, 2 auxiliary or peak amplifiers and 1 main or carrier amplifier are used.
  • the known systems exhibit several problems, for example the Q factor of the output matching networks tends to reduce the maximum bandwidth, and makes it more difficult to maintain a good matching in both low power mode and high power mode.
  • the known systems introduce phase distortion also called AM-PM conversion, and the shape of the phase distortion varies with frequency, which is a problem for pre-distortion based linearizers.
  • the present invention provides an RF amplifier and an RF communication system as described in the accompanying claims.
  • Figure 1 schematically shows circuit diagram an example of an embodiment of an RF amplifier circuit
  • Figure 2 shows a circuit diagram of an equivalent circuit for the example of FIG. 1 in the high input power mode.
  • Figure 3 shows a circuit diagram of an equivalent circuit for the example of FIG. 1 in the low input power mode.
  • Figure 4 shows a block diagram of an example of an embodiment of an RF communication system.
  • Figure 5 shows a graph of output current versus input signal voltage for the amplifies in the example of FIG. 1.
  • RF amplifier has its usual meaning and, in particular, denotes an amplifier designed to operate in a radiofrequency, i.e. a frequency band with a centre frequency of at least a few MHz, such as equal to, or less than, several GHz.
  • the example of an RF amplifier circuit shown therein comprises an circuit input 5, a carrier amplifier path 1 , a first peak amplifier path 2, a second peak amplifier path 3, an output stage 4 and a circuit output 6.
  • the paths 1-3 are connected to the circuit input 5.
  • the carrier amplifier path 1 comprises a carrier amplifier 10 having a carrier amplifier input connected to the circuit input 5.
  • the first peak amplifier path 2 comprises a first peak amplifier 20 connected to the circuit input 5.
  • the second peak amplifier path 3 comprises a second peak amplifier 30 connected to the circuit input 5.
  • the paths 1 -3 share an output stage 4 which connects the paths 1-3 to the circuit output 6.
  • the parts of the peak amplifier paths 2-3 which are in common with the carrier amplifier path 1 are from hereon referred to as "shared sub-paths".
  • the output stage 4 comprises the shared sub-paths.
  • an, RF, input signal may received.
  • the circuit output 6 the, amplified
  • RF, output signal can be outputted to a load.
  • the load is not shown in Fig. 1 however it will be apparent that any suitable load may be used, such as an antenna or otherwise.
  • the carrier amplifier can receive the input signal at its input and amplify the received input signal to an amplified carrier signal.
  • the carrier amplifier has a carrier amplifier output for outputting the amplified carrier signal.
  • the carrier amplifier 10 operates both when the power of the input signal is low, i.e. in a low power mode, and when the power of the input signal is high, i.e. a high power mode. More specific the carrier amplifier operates over the entire range from 0 to maximum power of the input signal. For example, when the input signal is small the carrier amplifier may operate in a non-saturated mode whereas the carrier amplifier may be operating in saturated mode
  • the first peak amplifier 20 can receive the input signal and amplify the input signal to a first amplified peak signal.
  • the peak amplifier has a first peak amplifier output for outputting the first amplified peak signal.
  • the second peak amplifier 30 can receive the input signal, amplify the input signal to a second amplified peak signal.
  • the peak amplifier has a second peak amplifier output for outputting the second amplified peak signal.
  • the peak amplifiers 20,30 do not output an amplified peak signal in the low input power mode and are designed such that they only operate above the low input power mode and provide an signal in the (medium to) high power mode
  • the amplified signals are combined to obtain an amplified signal.
  • the shared sub-paths present a non-zero impedance to the carrier amplifier 10, both in the low input power mode and the high input power mode.
  • the load modulation is reduced. This, in turn, may help to reduce the phase distortion and the reduction in maximum bandwidth. More in particular, because the load modulation is reduced, a suitable design of the RF amplified circuit should usually be sufficient to overcome any remaining drawbacks of the load modulation.
  • the carrier amplifier 10 and peak amplifiers 20,30 may be represented as current sources which provide respective currents I10.I20.
  • I30- The impedance seen in the high power mode by the carrier amplifier 10 for the example of FIG. 1 thus comprises the peak amplifier paths 2,3, and in this example is formed by the parallel connections of those current sources and the shared sub-paths.
  • the shared sub- paths respectively comprise the respective impedances of the components 41 ,42 which connect the carrier amplifier to the peak amplifier paths 2,3
  • the components 41 ,42 are transmission lines which in the high power mode have a defined constant impedance, which in this example is constant, whereas in the low power mode the transmission lines exhibit no significant impedance themselves but transform the load impedance and more specific operate as impedance inverters which invert the load impedance and hence present an impedance to the carrier amplifier 10 in that mode.
  • the peak amplifiers 20, 30 do not provide any signal and may hence be regarded as open circuits.
  • the impedance seen in the low power mode by the carrier amplifier 10 of the example of FIG. 1 is thus formed by the components of the shared sub-paths only and the peak amplifiers 20, 30 themselves are not a component of that impedance.
  • the impedance is constituted in the low power mode by the impedances in the carrier amplifier path 1 between the output of the carrier amplifier 10 and the circuit output 6 whereas any impedances in the peak amplifier paths 2,3 upstreams (in a current flow direction) of the output stage 4, i.e in parallel with the carrier amplifier 10, do not contribute to the impedance seen by the carrier amplifier 10.
  • the parallel branches of the peak amplifier paths 2,3, in parallel with the carrier amplifier 10, present an open circuit and thus do not present impedance to the carrier amplifier 10.
  • the transmission lines exhibit no significant impedance themselves but transform the load impedance and more specific operate as impedance inverters which invert the load impedance.
  • the impedance seen by the carrier amplifier is mainly the impedance of the load inverted 2 times by the transmission lines 41 and 42.
  • the RF amplifier circuit may further comprise an input stage 7.
  • the input stage has an input connected to the circuit input 5 and multiple outputs of which each is connected to a respective one of the paths 1-3.
  • the input stage 7 splits the input RF signals into respective signals for the paths 1-3, and in this example is an N-way power splitter with N being an integer equivalent to or larger than 3.
  • the input stage 7 further comprises phase shifting elements 71 ,72, which shift the phase of the input signal to compensate for a phase shift introduced by the output stage 4 in one of more of: the carrier amplifier path 1 , the first peak amplifier path 2, the second peak amplifier path 3.
  • the input stage 7 includes a phase shifter 71 in the first peak amplifier path 2, upstream of the first peak amplifier 20, which delays the phase with 90 degrees.
  • the input stage includes a phase shifter 72 in the second peak amplifier path 3, upstream of the second peak amplifier 30, which delays the phase with 180 degrees.
  • the output stage 4 introduces a delay of 90 degrees in the amplified carrier signal relative to the first amplified peak signal and a delay of 180 degrees is introduced in the amplified carrier signal relative to the second amplified peak signal. A delay of 90 degrees is introduced in the first amplified peak signal relative to the second amplified peak signal.
  • the input stage 7 thus compensates for the delays in the output stage 4.
  • the amplifiers 10,20 and 30 may be implemented in any manner suitable for the specific implementation.
  • the amplifying power of the first and second peak amplifiers may be the same and be smaller, equivalent or bigger than the amplifying power of the carrier amplifier, suitable ranges for the carrier amplifier to first peak amplifier to second peak amplifier power ratio
  • Pcarrier Ppeak 1 P peak 2 have found to be:
  • the carrier amplifier is a class A/B amplifier and the peak amplifiers are class C amplifiers.
  • the amplifiers 10,20,30 may alternatively be of a different type.
  • V in 0 V
  • V max maximum
  • the peak amplifiers 20,30 are configured such that they start amplifying when the input signal exceeds a threshold voltage V thr (0 ⁇ V thr ⁇ V max ). It should be noted, that the threshold voltage for the peak amplifiers depends on the size ratio between the carrier and peak amplifiers and that the peak amplifiers may have the same or different threshold voltages.
  • the output stage 4 may be implemented in any manner suitable for the specific implementation.
  • the paths 1-3 provide a connection between the circuit input 5 and the circuit output 6, and overlap, at least partially, in the output stage 4. More in particular, in this example the paths 1-3 provide parallel connections between the circuit input 5 and the output stage 4 and the output stage 4 comprises a chain of transmission lines 41 , 42 in series.
  • the amplified signals provided through the paths 1-3 are superimposed. The amplified signals are superimposed with suitable phase delays which are compensated, partially or completely, by a phase delay upstream of the amplifiers in the respective paths.
  • the first end of the chain is outside the peak amplifier paths 2-3, and connected to the output of the carrier amplifier 10.
  • the node between the transmission lines 41 ,42 is part of both the carrier amplifier path 1 and the first peak amplifier path 2 and connected to the first peak amplifier 10. Through that node the amplified carrier signal is superimposed on the first amplified peak signal.
  • the other end of the chain is part of both the carrier amplifier path 1 , the first peak amplifier path 2 and the second peak amplifier path 3 and connected to the second peak amplifier 20. At that end the combined amplified carrier signal and first amplified peak signal are superimposed on the second amplified peak signal.
  • the output stage 4 may, as shown in fig. 1 , for example comprise a first transmission line 41 and a second transmission line 42 in series between the carrier amplifier output and the second peak amplifier output.
  • the carrier amplifier output is connected to the circuit output 6 through the first transmission line 41 and the second transmission line 42 and the first peak amplifier output is connected to a node between the first transmission line 41 and the second transmission line 42.
  • the transmission lines 41 ,42 may for example be quarter wavelength transmission lines, with the wavelength ⁇ corresponding to that of the carrier frequency of the RF signal
  • the quarter wavelength transmission lines may have a length that does not correspond exactly to ⁇ /4, and for example have different lengths.
  • a transmission line may have a length which introduces a 95 degrees phase shift
  • another a transmission line may have a length which introduces a 85 degrees phase shift.
  • the peak amplifiers 20,30 are off and present an open circuit at their respective outputs.
  • the load impedance R L is transformed by the quarter wave length lines in a impedance R m0 d, higher than the load called load modulation.
  • both the carrier amplifier 10 and the peak amplifiers 20,30 can see their optimum impedance.
  • Fig. 4 shows an example of a suitable implementation of the transmission lines 41 ,42.
  • the example shown in FIG. 4 is a flat strip of metal, in this example a stripline micro-strip line, with a length of half a wavelength ⁇ .
  • the strip has a constant first width over a first half of the length, and a constant second width over a second half of the length.
  • the strip is split in two sections, each of a length of ⁇ /4, with different impedances and thus operates as two quarter wavelength transmission lines in series.
  • the example of an RF communication system shown therein comprises an antenna 102 for emitting RF signals, and a source 101 of RF signals.
  • An RF amplifier circuit 100 for example as shown in FIG. 1 , is connected to the antenna and the source. More in particular the RF amplifier circuit is connected between the source 101 and the antenna, in order to receive the RF signals from the source 101 and output those to the antenna 102. It will be apparent that between the source 101 and the amplifier 100, and the amplifier 100 and the antenna 102 other components may be provided.
  • the RF amplifier may be implemented on any suitable type of semiconductor substrate, such as of any semiconductor material or combinations of materials, such as gallium arsenide, silicon germanium, silicon-on-insulator (SOI), silicon, monocrystalline silicon, gallium nitride, the like, and combinations of the above.
  • semiconductor substrate such as of any semiconductor material or combinations of materials, such as gallium arsenide, silicon germanium, silicon-on-insulator (SOI), silicon, monocrystalline silicon, gallium nitride, the like, and combinations of the above.
  • connections as discussed herein may be any type of connection suitable to transfer signals from or to the respective nodes or components, for example via intermediate components.
  • the connections may for example be direct connections or indirect connections.
  • the connections may be illustrated or described in reference to being a single connection, a plurality of connections, unidirectional connections, or bidirectional connections. However, different embodiments may vary the implementation of the connections. For example, separate unidirectional connections may be used rather than bidirectional connections and vice versa.
  • plurality of connections may be replaced with a single connection that transfers multiple signals serially or in a time multiplexed different connections carrying subsets of these signals. Therefore, many options exist for transferring signals.
  • any arrangement of components to achieve the same functionality is effectively “associated” such that the desired functionality is achieved.
  • any two components herein combined to achieve a particular functionality can be seen as “associated with” each other such that the desired functionality is achieved, irrespective of architectures or intermedial components.
  • any two components so associated can also be viewed as being “operably connected,” or “operably coupled,” to each other to achieve the desired functionality.
  • the RF amplifier may be implemented as any number of separate integrated circuits or separate devices interconnected with each other in a suitable manner.
  • the amplifiers 1-3 may be provided as a single integrated circuit to which discrete components are connected to obtain the circuit shown in fig. 1.
  • the RF amplifier circuit may be implemented as circuitry located on a single integrated circuit.
  • the examples, or portions thereof may implemented as soft or code representations of physical circuitry or of logical representations convertible into physical circuitry, such as in a hardware description language of any appropriate type.
  • any reference signs placed between parentheses shall not be construed as limiting the claim.
  • the word 'comprising' does not exclude the presence of other elements or steps then those listed in a claim.
  • the terms "a” or "an,” as used herein, are defined as one or more than one.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un circuit amplificateur radiofréquence (RF) qui comprend une entrée servant à recevoir un signal d'entrée RF, et une sortie de circuit servant à envoyer un signal de sortie RF amplifié à une charge. Un chemin d'amplificateur de porteuse comprend un amplificateur de porteuse ayant une entrée d'amplificateur de porteuse connectée à l'entrée pour recevoir le signal d'entrée et une sortie d'amplificateur de porteuse afin de produire un signal de porteuse amplifié à la fois dans un mode de faible puissance d'entrée du circuit amplificateur de radiofréquence et dans un mode de haute puissance d'entrée du circuit amplificateur de radiofréquence. Un premier chemin d'amplificateur de crête comprend un premier amplificateur de crête connecté à l'entrée pour recevoir le signal d'entrée et produire un premier signal de crête amplifié, le premier amplificateur de crête étant inactif en mode faible puissance d'entrée. Un deuxième chemin d'amplificateur de crête comprend un deuxième amplificateur de crête connecté à l'entrée pour recevoir le signal d'entrée et produire un deuxième signal de crête amplifié, le deuxième amplificateur de crête étant inactif en mode faible puissance d'entrée. Les premier et deuxième chemins d'amplificateur de crête ont des sous-chemins en commun avec le chemin d'amplificateur de porteuse. Un étage de sortie connecte les chemins à la sortie de circuit et comprend les sous-chemins partagés, les sous-chemins partagés présentant une impédance non nulle à l'amplificateur de porteuse, à la fois dans le mode de faible puissance d'entrée et dans le mode de haute puissance d'entrée.
PCT/IB2010/003412 2010-12-09 2010-12-09 Circuit amplificateur radiofréquence et système électronique comprenant ce circuit WO2012076924A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/IB2010/003412 WO2012076924A1 (fr) 2010-12-09 2010-12-09 Circuit amplificateur radiofréquence et système électronique comprenant ce circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2010/003412 WO2012076924A1 (fr) 2010-12-09 2010-12-09 Circuit amplificateur radiofréquence et système électronique comprenant ce circuit

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016056952A1 (fr) * 2014-10-06 2016-04-14 Telefonaktiebolaget L M Ericsson (Publ) Circuit amplificateur et procédé
EP2880760A4 (fr) * 2012-08-02 2016-04-27 Imagine Comm Corp Système amplificateur à rendement élevé à large bande et procédé de constitution d'un signal rf modulé en amplitude à haute puissance
CN106537769A (zh) * 2014-05-13 2017-03-22 天工方案公司 与线性和高效宽带功率放大器有关的系统和方法
WO2017108874A1 (fr) * 2015-12-24 2017-06-29 Koninklijke Philips N.V. Dispositif et procédé pour entraîner une bobine d'émission dans un système d'imagerie par résonance magnétique
WO2018186776A1 (fr) * 2017-04-06 2018-10-11 Telefonaktiebolaget Lm Ericsson (Publ) Agencement d'amplificateur de puissance à large bande
CN111934633A (zh) * 2020-09-27 2020-11-13 成都嘉纳海威科技有限责任公司 一种高功率增益高回退效率功率放大器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001095481A1 (fr) * 2000-06-06 2001-12-13 Telefonaktiebolaget Lm Ericsson Amplificateur de type doherty a etages multiples
US6472934B1 (en) * 2000-12-29 2002-10-29 Ericsson Inc. Triple class E Doherty amplifier topology for high efficiency signal transmitters
US20030137346A1 (en) * 2000-07-07 2003-07-24 Richard Hellberg Transmitter including a composite amplifier
WO2009081341A1 (fr) * 2007-12-21 2009-07-02 Nxp B.V. Amplificateur doherty à trois voies comportant un réseau de sortie minimum

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001095481A1 (fr) * 2000-06-06 2001-12-13 Telefonaktiebolaget Lm Ericsson Amplificateur de type doherty a etages multiples
US20030137346A1 (en) * 2000-07-07 2003-07-24 Richard Hellberg Transmitter including a composite amplifier
US6472934B1 (en) * 2000-12-29 2002-10-29 Ericsson Inc. Triple class E Doherty amplifier topology for high efficiency signal transmitters
WO2009081341A1 (fr) * 2007-12-21 2009-07-02 Nxp B.V. Amplificateur doherty à trois voies comportant un réseau de sortie minimum

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2880760A4 (fr) * 2012-08-02 2016-04-27 Imagine Comm Corp Système amplificateur à rendement élevé à large bande et procédé de constitution d'un signal rf modulé en amplitude à haute puissance
CN106537769A (zh) * 2014-05-13 2017-03-22 天工方案公司 与线性和高效宽带功率放大器有关的系统和方法
WO2016056952A1 (fr) * 2014-10-06 2016-04-14 Telefonaktiebolaget L M Ericsson (Publ) Circuit amplificateur et procédé
US10389309B2 (en) 2014-10-06 2019-08-20 Telefonaktiebolaget Lm Ericsson (Publ) Amplifier circuit and method
WO2017108874A1 (fr) * 2015-12-24 2017-06-29 Koninklijke Philips N.V. Dispositif et procédé pour entraîner une bobine d'émission dans un système d'imagerie par résonance magnétique
WO2018186776A1 (fr) * 2017-04-06 2018-10-11 Telefonaktiebolaget Lm Ericsson (Publ) Agencement d'amplificateur de puissance à large bande
US11652452B2 (en) 2017-04-06 2023-05-16 Telefonaktiebolaget Lm Ericsson (Publ) Wideband power amplifier arrangement
CN111934633A (zh) * 2020-09-27 2020-11-13 成都嘉纳海威科技有限责任公司 一种高功率增益高回退效率功率放大器

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