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WO2011081309A3 - Resistance change memory device, and manufacturing method and driving method for same - Google Patents

Resistance change memory device, and manufacturing method and driving method for same Download PDF

Info

Publication number
WO2011081309A3
WO2011081309A3 PCT/KR2010/008634 KR2010008634W WO2011081309A3 WO 2011081309 A3 WO2011081309 A3 WO 2011081309A3 KR 2010008634 W KR2010008634 W KR 2010008634W WO 2011081309 A3 WO2011081309 A3 WO 2011081309A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
wirings
manufacturing
conductive patterns
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/008634
Other languages
French (fr)
Korean (ko)
Other versions
WO2011081309A2 (en
Inventor
황현상
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gwangju Institute of Science and Technology
Original Assignee
Gwangju Institute of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gwangju Institute of Science and Technology filed Critical Gwangju Institute of Science and Technology
Publication of WO2011081309A2 publication Critical patent/WO2011081309A2/en
Publication of WO2011081309A3 publication Critical patent/WO2011081309A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

The present relates to a variable resistance memory device, and to a manufacturing method and driving method for same. A variable resistance memory device according to embodiments of the present invention comprises: a plurality of first wirings arranged in one direction; a plurality of conductive patterns formed on the first wirings; a variable resistance layer formed on the conductive patterns; a plurality of second wirings arranged in a direction intersecting the first wirings so as to pass through a portion of the conductive patterns; and a plurality of third wirings arranged in a direction intersecting the first wirings so as to pass through a remaining portion of the conductive patterns. According to embodiments of the present invention, a fine pattern of 1F or less, preferably 0.1F, is formed using double patterning and a sidewall spacer, and multiple-bit data can be stored in an area of 4F2 using the fine pattern.
PCT/KR2010/008634 2009-12-30 2010-12-03 Resistance change memory device, and manufacturing method and driving method for same Ceased WO2011081309A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0134088 2009-12-30
KR1020090134088A KR101041742B1 (en) 2009-12-30 2009-12-30 Resistance change memory device, manufacturing method and driving method thereof

Publications (2)

Publication Number Publication Date
WO2011081309A2 WO2011081309A2 (en) 2011-07-07
WO2011081309A3 true WO2011081309A3 (en) 2011-09-22

Family

ID=44226944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/008634 Ceased WO2011081309A2 (en) 2009-12-30 2010-12-03 Resistance change memory device, and manufacturing method and driving method for same

Country Status (2)

Country Link
KR (1) KR101041742B1 (en)
WO (1) WO2011081309A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8295335B2 (en) 2009-12-31 2012-10-23 Intel Corporation Techniques to control uplink power
KR101257365B1 (en) 2011-07-22 2013-04-23 에스케이하이닉스 주식회사 Resistive RAM of having threshold switching operation and Method of fabricating the same
KR101929246B1 (en) * 2012-09-14 2018-12-14 삼성전자주식회사 Variable Resistance memory device and method of forming the same
KR102079599B1 (en) * 2013-11-29 2020-02-21 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
KR102155783B1 (en) * 2014-01-17 2020-09-15 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
KR102087744B1 (en) 2014-03-17 2020-03-11 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000023395A (en) * 1998-09-24 2000-04-25 칼 하인쯔 호르닝어 Memory cell arrangement and method for the production thereof
KR20030082240A (en) * 2002-04-17 2003-10-22 삼성전자주식회사 Phase changeable memory cells and methods of fabricating the same
KR20040107487A (en) * 2002-04-04 2004-12-20 가부시끼가이샤 도시바 Phase-change memory device
JP2005101535A (en) * 2003-08-27 2005-04-14 Nec Corp Semiconductor device
KR20070062435A (en) * 2005-12-12 2007-06-15 히다치 글로벌 스토리지 테크놀로지스 네덜란드 비.브이. Unipolar resistive ram unit and vertical stack structure
KR100734317B1 (en) * 2006-05-16 2007-07-02 삼성전자주식회사 Non-volatile memory device for 2-bit operation and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4973876B2 (en) * 2007-08-22 2012-07-11 信越化学工業株式会社 Pattern forming method and pattern surface coating material used therefor
JP5236983B2 (en) * 2007-09-28 2013-07-17 東京エレクトロン株式会社 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program, and program storage medium

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000023395A (en) * 1998-09-24 2000-04-25 칼 하인쯔 호르닝어 Memory cell arrangement and method for the production thereof
KR20040107487A (en) * 2002-04-04 2004-12-20 가부시끼가이샤 도시바 Phase-change memory device
KR20030082240A (en) * 2002-04-17 2003-10-22 삼성전자주식회사 Phase changeable memory cells and methods of fabricating the same
JP2005101535A (en) * 2003-08-27 2005-04-14 Nec Corp Semiconductor device
KR20070062435A (en) * 2005-12-12 2007-06-15 히다치 글로벌 스토리지 테크놀로지스 네덜란드 비.브이. Unipolar resistive ram unit and vertical stack structure
KR100734317B1 (en) * 2006-05-16 2007-07-02 삼성전자주식회사 Non-volatile memory device for 2-bit operation and manufacturing method thereof

Also Published As

Publication number Publication date
KR101041742B1 (en) 2011-06-16
WO2011081309A2 (en) 2011-07-07

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