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WO2010037264A1 - Chemical-mechanical polishing slurry - Google Patents

Chemical-mechanical polishing slurry Download PDF

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Publication number
WO2010037264A1
WO2010037264A1 PCT/CN2009/001083 CN2009001083W WO2010037264A1 WO 2010037264 A1 WO2010037264 A1 WO 2010037264A1 CN 2009001083 W CN2009001083 W CN 2009001083W WO 2010037264 A1 WO2010037264 A1 WO 2010037264A1
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WO
WIPO (PCT)
Prior art keywords
mechanical polishing
polishing liquid
chemical mechanical
hydrochloride
sulfate
Prior art date
Application number
PCT/CN2009/001083
Other languages
French (fr)
Chinese (zh)
Inventor
宋伟红
姚颖
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Publication of WO2010037264A1 publication Critical patent/WO2010037264A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a polishing liquid, and in particular to a chemical mechanical polishing liquid.
  • IC feature sizes continue to shrink, silicon wafer size continues to increase, and IC processes become more complex and finer, which raises the surface quality of inter-layer dielectrics within the chip.
  • Requirements Especially when entering the sub-90nm process node, small differences in surface morphology may cause large changes in device performance, which poses higher challenges to the global planarization of dielectric films, such as surface depth, fine scratches, materials. Defects and erosion, particulate contaminants, etc. have strict limits.
  • the conventional media material polishing liquid has a higher concentration of abrasive particles, which increases the potential for causing the above problems.
  • the technical problem to be solved by the present invention is to provide a chemical mechanical machine in order to overcome the defects of the conventional chemical mechanical polishing liquid abrasive particles, which are likely to cause surface depth, fine scratches, material defects and erosion, and more particulate pollutants.
  • a polishing solution that chemically increases the removal rate of the silica dielectric material (PETEOS) under acidic or basic conditions, and also has a relatively low abrasive particle content (10-20% by mass) Higher silica removal rate and Higher flatness efficiency, no scratches on the surface of the material, no corrosion.
  • the chemical mechanical polishing liquid of the present invention comprises abrasive particles and water, which further contains one or more of the following organic salts: a hydrochloride of a fatty amine, a sulfate of a fatty amine, a hydrochloride of an amide, an amide Sulfate, amino acid hydrochloride and amino acid sulfate.
  • the organic salt is a polishing accelerator for silicon oxide and is a chemical additive for increasing the removal rate of the silica dielectric material.
  • the preferred fatty amine is c, ⁇ c 8 aliphatic amine, preferably triethylamine, ethylenediamine or triethylamine, more preferably ethylenediamine; wherein, CH 8 aliphatic amine means comprising
  • the saturated or unsaturated aliphatic amine of 1 to 8 carbons, which is substituted by one or more of a linear hydrocarbon group, a hydrocarbon group having a side chain, and a cyclic hydrocarbon group, may have one or more nitrogen atoms.
  • the amide is preferably a C ⁇ do amide, preferably a glycinamide, an alanamide, a threonamide or a salicylamide.
  • the most preferred reagent is glycinamide hydrochloride. Among them, C ⁇ d.
  • An amide refers to an amide having 1 to 10 carbons, which is substituted by a linear hydrocarbon group and/or a hydrocarbon group having a side chain, and may have one or more amide groups, and the above hydrocarbon group may have a hydroxyl group, a carboxyl group, an amino group, or an aldehyde group. a substituent such as a decyloxy group or a carbonyl group.
  • the amino acid is preferably glycine, glutamic acid, tryptophan or cystine, more preferably glycine.
  • the content of the organic salt is preferably from 0.01% to 1% by mass, more preferably from 0.1% to 0.5% by mass.
  • the abrasive particles are preferably selected from one or more of silica (such as silica sol particles), alumina, cerium oxide and polymer particles; preferably silica sol particles;
  • the abrasive particles preferably have a particle diameter of 10 to 200 nm, more preferably 20 to 150 nm, most preferably 30 to 80 nm ; and the abrasive particles preferably have a content of 5 to 30% by mass. More preferably, the mass percentage is 10-20%.
  • the water is preferably deionized water; the water content is 100% by mass of the polishing liquid.
  • the chemical mechanical polishing liquid can be used under acidic or alkaline conditions, and the pH is more preferably 1-3 or 10-12.
  • the chemical mechanical polishing liquid of the present invention may further contain other conventional additives in the art, such as a bactericide, an antifungal agent, a slurry stabilizer, and a viscosity modifier.
  • the reagents and starting materials used in the present invention are commercially available.
  • the chemical mechanical polishing liquid of the present invention can be simply and uniformly mixed from the above components, and then adjusted to a desired pH by a pH adjusting agent known in the art.
  • the chemical mechanical polishing liquid of the present invention is particularly suitable for chemical mechanical polishing of interlayer dielectric (ILD).
  • ILD interlayer dielectric
  • the positive progress of the present invention is as follows: Compared with the existing chemical mechanical polishing liquid, the present invention chemically improves the removal rate of the chemical mechanical polishing liquid to the dielectric material, reduces the amount of surface contamination of the material, and reduces the micro stroke. The effect of the damage on the performance of the device has a good correction for the surface morphology of the silicon oxide.
  • the chemical mechanical polishing liquid of the present invention can also have a high silicon oxide removal rate and a high planarization efficiency at a relatively low abrasive particle content (10-20% by mass), and the surface of the material is free from scratches and corrosion. .
  • Figure 1 shows a scanning electron microscope (SEM) photograph of a cross section of a patterned wafer polished by ILD-854.
  • Fig. 2 is a SEM photograph of a cross section of the pattern wafer of the type ILD-854 after the polishing liquid 11 was polished in the effect example 1.
  • Table 1 shows the chemical mechanical polishing liquids of the present invention, Examples 1 to 25, according to the formula in the table, The composition is simply and uniformly mixed, and 100% by mass of the polishing liquid is made up with water, and then adjusted to a suitable pH value using potassium hydroxide, ammonia water and nitric acid to prepare a polishing liquid of each example.
  • S0 2 is a sol particle.
  • Table 1 Chemical mechanical polishing liquid 1 ⁇ 25 of the present invention
  • Polishing liquid 1 ⁇ 11 is used to polish the base material.
  • the polishing conditions are as follows:
  • Polished base material PETEOS blank wafer; Polishing machine Logitek, PM50; Down pressure:
  • Table 2 compares the polishing rate and polishing effect of the polishing solution 1 and the polishing liquid 1 to 11 on the wafer.
  • T-801 is a polyquaternary ammonium salt, purchased from Tianjin Chemical Industry Institute, 80 2 are sol particles, the particle size is
  • the chemical mechanical polishing liquid of the present invention chemically improves the removal rate of the dielectric material compared with the comparative polishing liquid, and reduces the amount of surface contamination of the material, thereby reducing the micro scratching effect.
  • the effect of device performance has a good correction on the surface morphology of silicon oxide and high surface planarization efficiency.
  • the chemical mechanical polishing liquid of the present invention may have a relatively low solid content (15%).
  • the polishing liquid 11 of the effect example 1 was polished on a pattern wafer of the type ILD-854, and the polishing conditions were as follows:
  • Polishing machine Logitek, PM50; Down pressure: 4 psi; Flow rate: 100 ml/min ; Rotation speed (buffing head/turntable): 90/70 rpm.
  • a scanning electron microscope (SEM) photograph of the polished section of the pattern wafer of the model ILD-854 in the effect example 1 was polished.
  • Figure 1 shows a scanning electron microscope (SEM) photograph of a cross section of a patterned wafer polished by ILD-854.
  • the polishing solution has a good planarization effect, and the surface of the wafer has no contaminant particles.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A chemical-mechanical polishing slurry is provided, which comprises abrasive particles and one or more organic salts selected from the group of aliphatic amine hydrochloride, aliphatic amine sulfate, amide hydrochloride, amide sulfate, amino acid hydrochloride and amino acid sulfate. Said polishing slurry can effectively enhance the removal rate of silicon oxide dielectric materials in either an acidic or a basic medium. Higher removal rate of silicon oxide and planarization rate can be achieved with a lower content of abrasive particles, and no scratch and corrosion on the surface of materials as well.

Description

一种化学机械抛光液  Chemical mechanical polishing liquid
技术领域 Technical field
本发明涉及一种抛光液， 具体的涉及一种化学机械抛光液。  The present invention relates to a polishing liquid, and in particular to a chemical mechanical polishing liquid.
技术背景 technical background
随着集成电路 (IC)产业的飞速发展， IC特征尺寸不断缩小， 硅片尺寸不 断增大， IC工艺变得越来越复杂和精细，这对芯片内部层间介质的表面质量 提出了更高的要求。 尤其是进入亚 90nm工艺节点， 表面形貌的微小差异就 可能引起器件性能的较大变化， 这对介质膜的全局平面化提出了更高的挑 战， 例如对表面阶深、 细微划伤、 材料缺陷和侵蚀、 颗粒污染物等都有严格 的限制。 然而传统的介质材料抛光液的磨料粒子浓度较高， 这就增加了产生 上述问题的潜在可能性。 要保持一定的去除速率， 降低磨料粒子含量， 就要 求用化学方法提高氧化硅的去除速率。 然而二氧化硅为四价硅， 非常稳定， 不能用氧化还原方法加快去除， 所以介质材料的化学机械抛光（CMP)过程 主要是磨料粒子作用于表面水合层将其去除。而通过化学方法提升氧化硅的 去除， 报道较少， 专利 US2004154231A1 , US2004023496A1 是采用聚乙烯 亚胺、 高氯酸、 次氯酸等来加快氧化硅的去除， 但表面活性剂的使用， 通常 会影响其它材料的去除， 强氧化剂也存在稳定性的问题等等。 发明概要  With the rapid development of the integrated circuit (IC) industry, IC feature sizes continue to shrink, silicon wafer size continues to increase, and IC processes become more complex and finer, which raises the surface quality of inter-layer dielectrics within the chip. Requirements. Especially when entering the sub-90nm process node, small differences in surface morphology may cause large changes in device performance, which poses higher challenges to the global planarization of dielectric films, such as surface depth, fine scratches, materials. Defects and erosion, particulate contaminants, etc. have strict limits. However, the conventional media material polishing liquid has a higher concentration of abrasive particles, which increases the potential for causing the above problems. To maintain a certain removal rate and reduce the abrasive particle content, it is necessary to chemically increase the removal rate of silicon oxide. However, silica is tetravalent silicon, which is very stable and cannot be removed by a redox method. Therefore, the chemical mechanical polishing (CMP) process of the dielectric material is mainly performed by the abrasive particles acting on the surface hydration layer. However, there are few reports on the removal of silicon oxide by chemical methods. Patent US2004154231A1, US2004023496A1 uses polyethyleneimine, perchloric acid, hypochlorous acid, etc. to accelerate the removal of silicon oxide, but the use of surfactants usually affects Removal of other materials, problems with stability of strong oxidants, and the like. Summary of invention
本发明所要解决的技术问题是为了克服传统的化学机械抛光液磨料粒 子浓度较高容易造成表面阶深、 细微划伤、 材料缺陷和侵蚀、 较多颗粒污染 物等缺陷而提供了一种化学机械抛光液，其通过化学方法在酸性或碱性条件 下均能够提高二氧化硅介电材料 （PETEOS) 的去除速率， 还可以在相对较 低的磨料粒子含量 （质量百分比 10-20%) 下具有较高的氧化硅去除速率和 较高的平坦化效率， 材料表面无划伤， 无腐蚀。 The technical problem to be solved by the present invention is to provide a chemical mechanical machine in order to overcome the defects of the conventional chemical mechanical polishing liquid abrasive particles, which are likely to cause surface depth, fine scratches, material defects and erosion, and more particulate pollutants. A polishing solution that chemically increases the removal rate of the silica dielectric material (PETEOS) under acidic or basic conditions, and also has a relatively low abrasive particle content (10-20% by mass) Higher silica removal rate and Higher flatness efficiency, no scratches on the surface of the material, no corrosion.
本发明的化学机械抛光液， 其包含磨料颗粒和水， 其还含有下述有机盐 中的一种或多种： 脂肪胺的盐酸盐、 脂肪胺的硫酸盐、 酰胺的盐酸盐、 酰胺 的硫酸盐、 氨基酸的盐酸盐和氨基酸的硫酸盐。  The chemical mechanical polishing liquid of the present invention comprises abrasive particles and water, which further contains one or more of the following organic salts: a hydrochloride of a fatty amine, a sulfate of a fatty amine, a hydrochloride of an amide, an amide Sulfate, amino acid hydrochloride and amino acid sulfate.
其中， 所述的有机盐为氧化硅的抛光促进剂， 是用于提高二氧化硅介质 材料去除速率的化学添加剂。  Wherein the organic salt is a polishing accelerator for silicon oxide and is a chemical additive for increasing the removal rate of the silica dielectric material.
本发明中， 所述的脂肪胺较佳的为 c,〜c8脂肪胺， 优选乙胺、 乙二胺或 三乙胺， 更佳的为乙二胺； 其中， CH 8脂肪胺是指含 1到 8个碳的， 由直 链烃基、带有侧链的烃基和环状烃基中的一种或多种取代的饱和或不饱和脂 肪胺， 可以有一个或多个氮原子。 In the present invention, the preferred fatty amine is c, ~c 8 aliphatic amine, preferably triethylamine, ethylenediamine or triethylamine, more preferably ethylenediamine; wherein, CH 8 aliphatic amine means comprising The saturated or unsaturated aliphatic amine of 1 to 8 carbons, which is substituted by one or more of a linear hydrocarbon group, a hydrocarbon group having a side chain, and a cyclic hydrocarbon group, may have one or more nitrogen atoms.
所述的酰胺较佳的为 C^do酰胺， 优选甘氨酰胺、丙氨酰胺、苏氨酰胺 或水杨酰胺。 最优选试剂为甘氨酰胺盐酸盐。 其中， C^d。酰胺是指含 1到 10个碳的， 由直链烃基和 /或带有侧链的烃基取代的酰胺， 可以有一个或多 个酰胺基， 上述烃基可以带有羟基、 羧基、 氨基、 醛基、 垸氧基或羰基等取 代基。  The amide is preferably a C^do amide, preferably a glycinamide, an alanamide, a threonamide or a salicylamide. The most preferred reagent is glycinamide hydrochloride. Among them, C^d. An amide refers to an amide having 1 to 10 carbons, which is substituted by a linear hydrocarbon group and/or a hydrocarbon group having a side chain, and may have one or more amide groups, and the above hydrocarbon group may have a hydroxyl group, a carboxyl group, an amino group, or an aldehyde group. a substituent such as a decyloxy group or a carbonyl group.
所述的氨基酸较佳的为甘氨酸、 谷氨酸、 色胺酸或胱氨酸， 更佳的为甘 氨酸。  The amino acid is preferably glycine, glutamic acid, tryptophan or cystine, more preferably glycine.
本发明中， 所述的有机盐的含量较佳的为质量百分比 0.01%-1%， 更佳 的为 0.1-0.5%。  In the present invention, the content of the organic salt is preferably from 0.01% to 1% by mass, more preferably from 0.1% to 0.5% by mass.
本发明中， 所述的磨料颗粒较佳的选自二氧化硅 （如二氧化硅溶胶颗 粒）、 氧化铝、 氧化铈和聚合物颗粒中的一种或多种； 优选二氧化硅溶胶颗 粒； 所述的磨料颗粒的粒径较佳的为 10-200nm, 更佳的为 20-150nm， 最佳 的为 30-80nm; 所述的磨料颗粒的含量较佳的为质量百分比 5-30%， 更佳的 为质量百分比 10-20%。 In the present invention, the abrasive particles are preferably selected from one or more of silica (such as silica sol particles), alumina, cerium oxide and polymer particles; preferably silica sol particles; The abrasive particles preferably have a particle diameter of 10 to 200 nm, more preferably 20 to 150 nm, most preferably 30 to 80 nm ; and the abrasive particles preferably have a content of 5 to 30% by mass. More preferably, the mass percentage is 10-20%.
本发明中， 所述的水较佳的为去离子水； 水的含量为补足抛光液的质量 百分比 100%。 本发明中，所述的化学机械抛光液在酸性或碱性条件下均可以使用， pH 值更佳的为 1-3或 10-12。 In the present invention, the water is preferably deionized water; the water content is 100% by mass of the polishing liquid. In the present invention, the chemical mechanical polishing liquid can be used under acidic or alkaline conditions, and the pH is more preferably 1-3 or 10-12.
本发明的化学机械抛光液还可含有其它本领域的常规添加剂， 如杀菌 剂、 防霉剂、 浆料稳定剂以及黏度调节剂等。  The chemical mechanical polishing liquid of the present invention may further contain other conventional additives in the art, such as a bactericide, an antifungal agent, a slurry stabilizer, and a viscosity modifier.
本发明所用的试剂及原料均市售可得。  The reagents and starting materials used in the present invention are commercially available.
本发明的化学机械抛光液可以由上述成分简单均匀混合，然后用本领域 公知的 pH调节剂调节至所需 pH值即可。  The chemical mechanical polishing liquid of the present invention can be simply and uniformly mixed from the above components, and then adjusted to a desired pH by a pH adjusting agent known in the art.
本发明的化学机械抛光液尤其适用于层间介电质 （ILD) 的化学机械抛 光。  The chemical mechanical polishing liquid of the present invention is particularly suitable for chemical mechanical polishing of interlayer dielectric (ILD).
本发明的积极进步效果在于： 与现有的化学机械抛光液相比， 本发明用 化学方法提高了化学机械抛光液对介质材料的去除速率， 减少了材料表面污 染物的数量， 减少了微小划伤对器件性能所造成的影响， 对氧化硅的表面形 貌有较好的修正。本发明的化学机械抛光液还可以在相对较低的磨料粒子含 量 （质量百分比 10-20%) 下具有较高的氧化硅去除速率和较高的平坦化效 率， 材料表面无划伤， 无腐蚀。  The positive progress of the present invention is as follows: Compared with the existing chemical mechanical polishing liquid, the present invention chemically improves the removal rate of the chemical mechanical polishing liquid to the dielectric material, reduces the amount of surface contamination of the material, and reduces the micro stroke. The effect of the damage on the performance of the device has a good correction for the surface morphology of the silicon oxide. The chemical mechanical polishing liquid of the present invention can also have a high silicon oxide removal rate and a high planarization efficiency at a relatively low abrasive particle content (10-20% by mass), and the surface of the material is free from scratches and corrosion. .
附图说明 DRAWINGS
图 1为型号为 ILD-854的图形晶圆抛光前的断面的扫描电镜（SEM)照 片。  Figure 1 shows a scanning electron microscope (SEM) photograph of a cross section of a patterned wafer polished by ILD-854.
图 2为型号为 ILD-854的图形晶圆在效果实施例 1中抛光液 11进行抛 光后的断面的 SEM照片。  Fig. 2 is a SEM photograph of a cross section of the pattern wafer of the type ILD-854 after the polishing liquid 11 was polished in the effect example 1.
发明内容 Summary of the invention
下面用实施例来进一步说明本发明， 但本发明并不受其限制。  The invention is further illustrated by the following examples, but the invention is not limited thereto.
实施例 1~25  Example 1~25
表 1 给出了本发明的化学机械抛光液实施例 1~25， 按表中配方， 将各 成分简单均匀混合， 用水补足抛光液的质量百分比 100%， 之后采用氢氧化 钾、 氨水和硝酸调节至合适 pH值， 即可制得各实施例抛光液。 S02均为溶 胶颗粒。 表 1 本发明的化学机械抛光液 1〜25 Table 1 shows the chemical mechanical polishing liquids of the present invention, Examples 1 to 25, according to the formula in the table, The composition is simply and uniformly mixed, and 100% by mass of the polishing liquid is made up with water, and then adjusted to a suitable pH value using potassium hydroxide, ammonia water and nitric acid to prepare a polishing liquid of each example. S0 2 is a sol particle. Table 1 Chemical mechanical polishing liquid 1~25 of the present invention
研磨颗粒 有机盐  Abrasive particles
实  Real
含  Contain
施 H 量 含量  Application amount
例 具体物质 具体物质  Specific substance
wt wt%  Wt wt%
%  %
1 5 Si02 (lOnm) 0.5 甘氨酸的硫酸盐 11 5 Si0 2 (lOnm) 0.5 Glycine Sulfate 1
2 30 Si02 (105nm) 0.01 谷氨酸的硫酸盐 22 30 Si0 2 (105nm) 0.01 glutamic acid sulfate 2
3 】0 Si02 (200nm) 0.3 谷氨酸的硫酸盐 103 】0 Si0 2 (200nm) 0.3 glutamic acid sulfate 10
4 20 Si02 (85nm) 0.1 色胺酸的盐酸盐 124 20 Si0 2 (85nm) 0.1 Tryptophan hydrochloride 12
5 17 Si02 (20nm) 0.5 色胺酸的硫酸盐 35 17 Si0 2 (20nm) 0.5 Tryptophan sulfate 3
6 15 Si02 (150nm) 0.3 胱氨酸的盐酸盐 16 15 Si0 2 (150nm) 0.3 Cystine hydrochloride 1
7 8 Si02 (30nm) 0.03 胱氨酸的硫酸盐 27 8 Si0 2 (30nm) 0.03 Cystine Sulfate 2
8 8 Si02 (55nm) 0.05 乙胺盐酸盐 118 8 Si0 2 (55nm) 0.05 ethylamine hydrochloride 11
9 10 Si02 (70nm) 0.2 乙胺硫酸盐 109 10 Si0 2 (70nm) 0.2 ethylamine sulfate 10
10 8 Si02 (70nm) 0.08 三乙胺盐酸盐 410 8 Si0 2 (70nm) 0.08 Triethylamine hydrochloride 4
11 14 Si02 (70nm) 0.6 三乙胺硫酸盐 611 14 Si0 2 (70nm) 0.6 Triethylamine sulfate 6
12 20 Si02 ( 70nm) 0.4 甘氨酰胺硫酸盐 1212 20 Si0 (70nm) 2 0.4 12 glycinamide sulfate
13 16 Si02 ( 70nm) 0.2 丙氨酰胺盐酸盐 813 16 Si0 2 ( 70nm) 0.2 Alanine hydrochloride 8
14 14 Si02 (70nm) 0.1 丙氨酰胺硫酸盐 214 14 Si0 2 (70nm) 0.1 alanine sulfate 2
15 7 Si02 (70nm) 0.8 苏氨酰胺盐酸盐 915 7 Si0 2 (70nm) 0.8 threonide hydrochloride 9
16 9 Si02 ( 70nm) 1 苏氨酰胺硫酸盐 216 9 Si0 2 ( 70nm) 1 threonide sulfate 2
18 13 Si02 (70nm) 0.5 水杨酰胺硫酸盐 8 18 13 Si0 2 (70nm) 0.5 Salicylamide Sulfate 8
0.4 苏氨酰胺盐酸盐  0.4 threonide hydrochloride
19 7 A1203 (lOnm) 1 19 7 A1 2 0 3 (lOnm) 1
0.4 水杨酰胺硫酸盐  0.4 Salicylamide Sulfate
0.3 丙氨酰胺盐酸盐 0.3 alanine hydrochloride
20 4 CeO2(150nm) 2 20 4 CeO 2 (150nm) 2
0.3 乙胺硫酸盐  0.3 ethylamine sulfate
聚甲基丙烯  Polymethacryl
21 10 1 苏氨酰胺硫酸盐 10  21 10 1 threonamide sulfate 10
酸甲酯 ( 200nm ) Methyl ester (200nm)
0.1 三乙胺盐酸盐  0.1 triethylamine hydrochloride
22 7 Si02 ( 70nm) 0.3 甘氨酰胺硫酸盐 11 22 7 Si0 2 ( 70nm) 0.3 Glycinamide Sulfate 11
0.3 甘氨酸的硫酸盐  0.3 glycine sulfate
0.2 色胺酸的盐酸盐  0.2 tryptophan hydrochloride
23 4 Si02 ( 70nm ) 13 23 4 Si0 2 ( 70nm ) 13
0.4 丙氨酰胺盐酸盐  0.4 alanine hydrochloride
0.3 苏氨酰胺盐酸盐 0.3 threonide hydrochloride
24 9 Si02 ( 70nm) 1 24 9 Si0 2 ( 70nm) 1
0.7 三乙胺盐酸盐  0.7 triethylamine hydrochloride
0.2 苏氨酰胺盐酸盐  0.2 threonide hydrochloride
25 10 Si02 ( 70nm ) 0.3 三乙胺盐酸盐 2 25 10 Si0 2 ( 70nm ) 0.3 Triethylamine hydrochloride 2
0.3 胱氨酸的硫酸盐  0.3 cystine sulfate
效果实施例 1  Effect embodiment 1
将抛光液 1〜11对基底材料进行抛光， 抛光条件如下：  Polishing liquid 1~11 is used to polish the base material. The polishing conditions are as follows:
抛光基底材料： PETEOS空白晶片； 抛光机台 Logitek, PM50; 下压力: Polished base material: PETEOS blank wafer; Polishing machine Logitek, PM50; Down pressure:
； 流量： lOOml/min; 转速 (抛光头 /转盘）: 90/70rpm。 ; Flow rate: lOOml/min; Speed (buffing head / turntable): 90/70 rpm.
结果如表 2所示：  The results are shown in Table 2:
表 2对比抛光液 1和抛光液 1〜11在晶片上的抛光速率和抛光效果  Table 2 compares the polishing rate and polishing effect of the polishing solution 1 and the polishing liquid 1 to 11 on the wafer.
PETEOS去除速率 表面微 抛光液 pH 配方  PETEOS removal rate surface micro-polishing solution pH formula
( A/min ) 划伤 对比 1 11 Si02 15% 1737 少量( A/min ) Scratch contrast 1 11 Si0 2 15% 1737 Small amount
1 11 Si02 15%, 乙二胺盐酸盐 1.0% 2368 无1 11 Si0 2 15%, ethylenediamine hydrochloride 1.0% 2368
2 1 1 Si02 15%, 乙二胺硫酸盐 1.0% 2256 无2 1 1 Si0 2 15%, ethylenediamine sulfate 1.0% 2256 no
3 2 Si02 15%, 乙二胺盐酸盐 1.0% 2453 无3 2 Si0 2 15%, ethylenediamine hydrochloride 1.0% 2453
4 11 Si02 15%， 甘氨酸盐酸盐 1.0% 2425 无4 11 Si0 2 15%, glycine hydrochloride 1.0% 2425 none
5 1 1 Si02 15%, 谷氨酸盐酸盐 1.0% 2432 无5 1 1 Si0 2 15%, glutamic acid hydrochloride 1.0% 2432 no
6 3 Si02 15%, 谷氨酸盐酸盐 1.0% 2468 无6 3 Si0 2 15%, glutamic acid hydrochloride 1.0% 2468 none
7 1 1 Si02 15%, 甘氨酰胺盐酸盐 0.5% 2126 无7 1 1 Si0 2 15%, Glycinamide hydrochloride 0.5% 2126 None
8 10.5 Si02 15%， 甘氨酰胺盐酸盐 1.0% 2602 无8 10.5 Si0 2 15%, Glycinamide hydrochloride 1.0% 2602 None
9 2 Si02 15%, 甘氨酰胺盐酸盐 1.0% 2348 无 10 11 Si02 15%, 水杨酰胺盐酸盐 0.5% 2287 无9 2 Si0 2 15%, Glycinamide hydrochloride 1.0% 2348 10 11 Si0 2 15%, salicylamide hydrochloride 0.5% 2287 no
Si02 15%， 甘氨酸酰胺盐酸盐 1.0%, Si0 2 15%, glycine amide hydrochloride 1.0%,
11 1 1 2359 无  11 1 1 2359 no
T-801 50ppm, 甘油 2%  T-801 50ppm, glycerin 2%
其中， T-801为聚季铵盐， 购自天津化工院， 802均为溶胶颗粒， 粒径均为Among them, T-801 is a polyquaternary ammonium salt, purchased from Tianjin Chemical Industry Institute, 80 2 are sol particles, the particle size is
80nm。 80nm.
总结：  to sum up:
由上述效果实施例可以看出， 与对比抛光液相比， 本发明的化学机械抛 光液用化学方法提高了介质材料的去除速率， 并且减少了材料表面污染物的 数量， 减少了微小划伤对器件性能所造成的影响， 对氧化硅的表面形貌有较 好的修正， 具有较高的表面平坦化效率。 且本发明的化学机械抛光液还可以 有相对较低的固含量 （15%)。  It can be seen from the above effect embodiment that the chemical mechanical polishing liquid of the present invention chemically improves the removal rate of the dielectric material compared with the comparative polishing liquid, and reduces the amount of surface contamination of the material, thereby reducing the micro scratching effect. The effect of device performance has a good correction on the surface morphology of silicon oxide and high surface planarization efficiency. Further, the chemical mechanical polishing liquid of the present invention may have a relatively low solid content (15%).
效果实施例 2  Effect Example 2
将效果实施例 1中的抛光液 11对型号为 ILD-854的图形晶圆进行抛光， 抛光条件如下：  The polishing liquid 11 of the effect example 1 was polished on a pattern wafer of the type ILD-854, and the polishing conditions were as follows:
抛光机台 Logitek, PM50; 下压力： 4psi; 流量： 100ml/min; 转速 （抛 光头 /转盘）： 90/70rpm。 Polishing machine Logitek, PM50; Down pressure: 4 psi; Flow rate: 100 ml/min ; Rotation speed (buffing head/turntable): 90/70 rpm.
结果如图 2所示，为型号 ILD-854的图形晶圆在效果实施例 1中的抛光 液 11进行抛光后的断面的扫描电镜 （SEM) 照片。  As a result, as shown in Fig. 2, a scanning electron microscope (SEM) photograph of the polished section of the pattern wafer of the model ILD-854 in the effect example 1 was polished.
图 1为型号为 ILD-854的图形晶圆抛光前的断面的扫描电镜（SEM)照 片。  Figure 1 shows a scanning electron microscope (SEM) photograph of a cross section of a patterned wafer polished by ILD-854.
从图 2可以看出， 此抛光液具有很好的平坦化效果， 晶圆表面无污染物 颗粒。  As can be seen from Figure 2, the polishing solution has a good planarization effect, and the surface of the wafer has no contaminant particles.

Claims

权利要求 Rights request
1、 一种化学机械抛光液， 其包含磨料颗粒和水， 其特征在于： 其还含 有下述有机盐中的一种或多种： 脂肪胺的盐酸盐、 脂肪胺的硫酸盐、 酰胺的 盐酸盐、 酰胺的硫酸盐、 氨基酸的盐酸盐和氨基酸的硫酸盐。  A chemical mechanical polishing liquid comprising abrasive particles and water, characterized in that it further comprises one or more of the following organic salts: a hydrochloride of a fatty amine, a sulfate of a fatty amine, an amide Hydrochloride, amide sulfate, amino acid hydrochloride and amino acid sulfate.
2、 如权利要求 1 所述的化学机械抛光液， 其特征在于： 所述的脂肪胺 为 (^~( 8脂肪胺； 所述的酰胺为 C^CK)酰胺； 所述的氨基酸为甘氨酸、谷氨 酸、 色胺酸或胱氨酸。 2. The chemical mechanical polishing liquid according to claim 1, wherein: the fatty amine is (^~( 8 fatty amine; the amide is C^CK) amide; the amino acid is glycine, Glutamate, tryptophan or cystine.
3、 如权利要求 2所述的化学机械抛光液， 其特征在于： 所述的脂肪胺 为乙胺、 乙二胺或三乙胺； 所述的酰胺为甘氨酰胺、 丙氨酰胺、 苏氨酰胺或 水杨酰胺。  3. The chemical mechanical polishing liquid according to claim 2, wherein: the fatty amine is ethylamine, ethylenediamine or triethylamine; and the amide is glycinamide, alanamide, threonamide Amide or salicylamide.
4、 如权利要求 1 所述的化学机械抛光液， 其特征在于： 所述的有机盐 的含量为质量百分比 0.01%-1%。  The chemical mechanical polishing liquid according to claim 1, wherein the content of the organic salt is 0.01% to 1% by mass.
5、 如权利要求 4所述的化学机械抛光液， 其特征在于： 所述的有机盐 的含量为质量百分比 0.1-0.5%。  The chemical mechanical polishing liquid according to claim 4, wherein the organic salt is contained in an amount of 0.1 to 0.5% by mass.
6、 如权利要求 1 所述的化学机械抛光液， 其特征在于： 所述的磨料颗 粒为二氧化硅、 氧化铝、 氧化铈和聚合物颗粒中的一种或多种。  6. The chemical mechanical polishing liquid according to claim 1, wherein: the abrasive particles are one or more of silica, alumina, cerium oxide, and polymer particles.
7、 如权利要求 6所述的化学机械抛光液， 其特征在于： 所述的磨料颗 粒为二氧化硅溶胶颗粒。  The chemical mechanical polishing liquid according to claim 6, wherein the abrasive particles are silica sol particles.
8、 如权利要求 1 所述的化学机械抛光液， 其特征在于： 所述的磨料颗 粒的粒径为 10-200nm。  The chemical mechanical polishing liquid according to claim 1, wherein the abrasive grains have a particle diameter of 10 to 200 nm.
9、 如权利要求 8所述的化学机械抛光液， 其特征在于： 所述的磨料颗 粒的粒径为 20-150nm。  The chemical mechanical polishing liquid according to claim 8, wherein the abrasive grains have a particle diameter of 20 to 150 nm.
10、 如权利要求 9所述的化学机械抛光液， 其特征在于： 所述的磨料颗 粒的粒径为 30-80nm。  The chemical mechanical polishing liquid according to claim 9, wherein the abrasive grains have a particle diameter of 30 to 80 nm.
11、 如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的磨料颗 11. The chemical mechanical polishing liquid according to claim 1, wherein: said abrasive particles
12、 如权利要求 11 所述的化学 颗粒的含量为质量百分比 10-20%。 12. The chemical particles according to claim 11 in an amount of 10-20% by mass.
13、 如权利要求 1所述的化学枳 械抛光液的 pH值为 1-3或 10-12。  13. The chemical mechanical polishing liquid of claim 1 having a pH of 1-3 or 10-12.
PCT/CN2009/001083 2008-09-26 2009-09-25 Chemical-mechanical polishing slurry WO2010037264A1 (en)

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US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
EP1072662A1 (en) * 1999-07-28 2001-01-31 Eternal Chemical Co., Ltd. Chemical-mechanical abrasive composition and method
US20060186089A1 (en) * 2005-02-23 2006-08-24 Jsr Corporation Chemical mechanical polishing method
CN101153205A (en) * 2006-09-29 2008-04-02 安集微电子（上海）有限公司 Chemical mechanical polishing solution for polishing low dielectric materials

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Publication number Priority date Publication date Assignee Title
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
EP1072662A1 (en) * 1999-07-28 2001-01-31 Eternal Chemical Co., Ltd. Chemical-mechanical abrasive composition and method
US20060186089A1 (en) * 2005-02-23 2006-08-24 Jsr Corporation Chemical mechanical polishing method
CN101153205A (en) * 2006-09-29 2008-04-02 安集微电子（上海）有限公司 Chemical mechanical polishing solution for polishing low dielectric materials

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