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WO2009154383A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2009154383A3
WO2009154383A3 PCT/KR2009/003196 KR2009003196W WO2009154383A3 WO 2009154383 A3 WO2009154383 A3 WO 2009154383A3 KR 2009003196 W KR2009003196 W KR 2009003196W WO 2009154383 A3 WO2009154383 A3 WO 2009154383A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
semiconductor light
conductive semiconductor
semiconductor layer
Prior art date
Application number
PCT/KR2009/003196
Other languages
English (en)
French (fr)
Other versions
WO2009154383A2 (ko
Inventor
김근호
김성균
최희석
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to CN2009801213820A priority Critical patent/CN102217104A/zh
Priority to EP09766808A priority patent/EP2290711A4/en
Priority to US12/997,431 priority patent/US8373193B2/en
Publication of WO2009154383A2 publication Critical patent/WO2009154383A2/ko
Publication of WO2009154383A3 publication Critical patent/WO2009154383A3/ko
Priority to US13/759,291 priority patent/US9257613B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

실시 예는 반도체 발광소자를 제공한다. 실시 예에 따른 반도체 발광소자는, 제1도전형 반도체층; 상기 제1도전형 반도체층 위에 활성층; 상기 활성층 위에 제2도전형 반도체층; 및 상기 제1도전형 반도체층 위에 복수의 반사층을 포함하는 제1전극패드를 포함한다.
PCT/KR2009/003196 2008-06-16 2009-06-15 반도체 발광소자 WO2009154383A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2009801213820A CN102217104A (zh) 2008-06-16 2009-06-15 半导体发光器件
EP09766808A EP2290711A4 (en) 2008-06-16 2009-06-15 LIGHT-EMITTING SEMICONDUCTOR ELEMENT
US12/997,431 US8373193B2 (en) 2008-06-16 2009-06-15 Semiconductor for light emitting device
US13/759,291 US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080056210A KR100986518B1 (ko) 2008-06-16 2008-06-16 반도체 발광소자
KR10-2008-0056210 2008-06-16

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/997,431 A-371-Of-International US8373193B2 (en) 2008-06-16 2009-06-15 Semiconductor for light emitting device
US13/759,291 Continuation US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
WO2009154383A2 WO2009154383A2 (ko) 2009-12-23
WO2009154383A3 true WO2009154383A3 (ko) 2010-04-22

Family

ID=41434542

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/003196 WO2009154383A2 (ko) 2008-06-16 2009-06-15 반도체 발광소자

Country Status (5)

Country Link
US (1) US8373193B2 (ko)
EP (1) EP2290711A4 (ko)
KR (1) KR100986518B1 (ko)
CN (1) CN102217104A (ko)
WO (1) WO2009154383A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101081135B1 (ko) 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101054984B1 (ko) * 2010-03-26 2011-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101047792B1 (ko) * 2010-04-23 2011-07-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039948B1 (ko) 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101663192B1 (ko) * 2010-10-20 2016-10-06 엘지이노텍 주식회사 발광 소자
JP5652373B2 (ja) * 2011-03-24 2015-01-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
KR20120119395A (ko) * 2011-04-21 2012-10-31 삼성전자주식회사 발광소자 패키지 및 그 제조방법
WO2013024914A1 (ko) * 2011-08-17 2013-02-21 삼성전자주식회사 질화물 반도체 발광소자의 제조방법 및 이에 의해 제조된 질화물 반도체 발광소자
KR101832165B1 (ko) * 2011-11-15 2018-02-26 엘지이노텍 주식회사 발광소자
KR101872735B1 (ko) * 2011-11-15 2018-08-02 엘지이노텍 주식회사 발광소자 패키지
KR101205536B1 (ko) 2011-11-22 2012-11-27 일진머티리얼즈 주식회사 발광 다이오드의 제조 방법
US9306124B2 (en) * 2012-05-17 2016-04-05 Epistar Corporation Light emitting device with reflective electrode
KR101294246B1 (ko) * 2012-06-22 2013-08-07 고려대학교 산학협력단 중간층을 이용한 반사막을 포함하는 발광 다이오드 제조 방법, 및 상기 방법으로 제조한 발광 다이오드
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
KR101448842B1 (ko) * 2013-06-19 2014-10-13 엘지이노텍 주식회사 발광 다이오드
CN104409601A (zh) * 2014-11-05 2015-03-11 扬州中科半导体照明有限公司 具有双反射层的倒装发光二极管芯片
KR102332839B1 (ko) * 2015-01-29 2021-11-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 발광 소자 패키지
CN106159057B (zh) * 2015-04-01 2018-08-28 映瑞光电科技(上海)有限公司 Led芯片及其制作方法
KR102515622B1 (ko) * 2016-03-11 2023-03-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
CN106206903B (zh) * 2016-10-10 2018-11-27 江苏新广联半导体有限公司 一种具有高可靠性反射电极结构的led芯片的制作方法
CN109326700B (zh) * 2017-07-31 2020-02-11 山东浪潮华光光电子股份有限公司 一种GaN基LED电极结构及其制作方法
CN108538998B (zh) * 2018-03-30 2021-02-23 扬州乾照光电有限公司 一种led芯片及其制作方法
US12074250B2 (en) * 2020-01-23 2024-08-27 BOE MLED Technology Co., Ltd. Display substrate and method of manufacturing the same, and display device

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US20060081869A1 (en) * 2004-10-20 2006-04-20 Chi-Wei Lu Flip-chip electrode light-emitting element formed by multilayer coatings
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JP2008041866A (ja) * 2006-08-04 2008-02-21 Nichia Chem Ind Ltd 窒化物半導体素子
KR100675208B1 (ko) 2006-10-26 2007-01-29 삼성전기주식회사 고휘도 질화물계 반도체 발광소자
KR100910964B1 (ko) 2007-08-09 2009-08-05 포항공과대학교 산학협력단 오믹 전극 및 이의 형성 방법
CN101971368A (zh) 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
KR20070041506A (ko) * 2004-07-29 2007-04-18 쇼와 덴코 가부시키가이샤 반도체 발광소자용 양전극
US20060081869A1 (en) * 2004-10-20 2006-04-20 Chi-Wei Lu Flip-chip electrode light-emitting element formed by multilayer coatings

Also Published As

Publication number Publication date
US20110266573A1 (en) 2011-11-03
KR100986518B1 (ko) 2010-10-07
US8373193B2 (en) 2013-02-12
CN102217104A (zh) 2011-10-12
EP2290711A4 (en) 2011-08-03
WO2009154383A2 (ko) 2009-12-23
EP2290711A2 (en) 2011-03-02
KR20090130527A (ko) 2009-12-24

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