[go: up one dir, main page]

WO2009057660A1 - ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法 - Google Patents

ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法 Download PDF

Info

Publication number
WO2009057660A1
WO2009057660A1 PCT/JP2008/069691 JP2008069691W WO2009057660A1 WO 2009057660 A1 WO2009057660 A1 WO 2009057660A1 JP 2008069691 W JP2008069691 W JP 2008069691W WO 2009057660 A1 WO2009057660 A1 WO 2009057660A1
Authority
WO
WIPO (PCT)
Prior art keywords
tone mask
layer
semi
transmitting
light blocking
Prior art date
Application number
PCT/JP2008/069691
Other languages
English (en)
French (fr)
Inventor
Kagehiro Kageyama
Fumihiko Yamada
Original Assignee
Ulvac Coating Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Coating Corporation filed Critical Ulvac Coating Corporation
Priority to US12/740,645 priority Critical patent/US8216745B2/en
Priority to CN2008801145797A priority patent/CN101842744B/zh
Priority to KR1020107010968A priority patent/KR101242625B1/ko
Priority to JP2009513913A priority patent/JP4987075B2/ja
Publication of WO2009057660A1 publication Critical patent/WO2009057660A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　エッチングストッパ層の汎用性を向上したハーフトーンマスク。ハーフトーンマスク（１０）は、ガラス基板（Ｓ）を利用した透過部（ＴＡ）と、ガラス基板上に形成された第１半透過層（１１）を含む第１半透過部（ＨＡ）と、第１半透過層、第１半透過層より上方に積層された遮光層（１３）、及び第１半透過層と遮光層との間に形成されたエッチングストッパ層（１２）を含む遮光部（ＰＡ）とを備える。第１半透過層及び遮光層の各々は、Ｃｒ、あるいはＣｒの酸化物、窒化物、炭化物、酸化窒化物、酸化炭化物、窒化炭化物、酸化窒化炭化物からなる群から選択された少なくともいずれか一種からなる。エッチングストッパ層は、Ｆｅ、Ｎｉ、Ｃｏからなる群から選択された少なくともいずれか一種の第１元素と、Ａｌ、Ｓｉ、Ｔｉ、Ｎｂ、Ｔａ、Ｈｆ、Ｚｒからなる群から選択された少なくともいずれか一種の第２元素とを含む。
PCT/JP2008/069691 2007-11-01 2008-10-29 ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法 WO2009057660A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/740,645 US8216745B2 (en) 2007-11-01 2008-10-29 Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask
CN2008801145797A CN101842744B (zh) 2007-11-01 2008-10-29 半色调掩模、半色调掩模坯料及制造半色调掩模的方法
KR1020107010968A KR101242625B1 (ko) 2007-11-01 2008-10-29 하프톤 마스크, 하프톤 마스크 블랭크 및 하프톤 마스크의 제조 방법
JP2009513913A JP4987075B2 (ja) 2007-11-01 2008-10-29 ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007284734 2007-11-01
JP2007-284734 2007-11-01

Publications (1)

Publication Number Publication Date
WO2009057660A1 true WO2009057660A1 (ja) 2009-05-07

Family

ID=40591048

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069691 WO2009057660A1 (ja) 2007-11-01 2008-10-29 ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法

Country Status (6)

Country Link
US (1) US8216745B2 (ja)
JP (1) JP4987075B2 (ja)
KR (1) KR101242625B1 (ja)
CN (1) CN101842744B (ja)
TW (1) TWI391778B (ja)
WO (1) WO2009057660A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012090439A1 (ja) * 2010-12-27 2012-07-05 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス及びハーフトーンマスクの製造方法
KR101168406B1 (ko) 2009-05-26 2012-07-25 엘지이노텍 주식회사 하프톤 마스크 및 이의 제조 방법
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2017146365A (ja) * 2016-02-15 2017-08-24 関東化學株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP2020060664A (ja) * 2018-10-09 2020-04-16 アルバック成膜株式会社 マスクブランクス、ハーフトーンマスク、製造方法
JP2022009498A (ja) * 2020-04-28 2022-01-14 株式会社エスケーエレクトロニクス フォトマスク及びその製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5917020B2 (ja) * 2010-06-29 2016-05-11 Hoya株式会社 マスクブランクおよび多階調マスクの製造方法
KR101785177B1 (ko) * 2012-12-27 2017-11-06 알박 세이마쿠 가부시키가이샤 위상 시프트 마스크 및 그의 제조방법
CN104280930B (zh) * 2014-10-11 2017-07-18 深圳市华星光电技术有限公司 彩膜基板的制作方法、彩膜基板及液晶显示面板
CN104376899B (zh) * 2014-10-14 2017-01-11 业成光电（深圳）有限公司 电子装置、触控屏、透明导电膜及透明导电膜的制备方法
US10570498B2 (en) * 2015-02-10 2020-02-25 Dai Nippon Printing Co., Ltd. Manufacturing method for deposition mask, metal plate used for producing deposition mask, and manufacturing method for said metal sheet
US9837306B2 (en) 2015-12-21 2017-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnection structure and manufacturing method thereof
WO2019003486A1 (ja) * 2017-06-28 2019-01-03 アルバック成膜株式会社 マスクブランクス、位相シフトマスク、ハーフトーンマスク、マスクブランクスの製造方法、及び位相シフトマスクの製造方法
JP7037919B2 (ja) * 2017-11-14 2022-03-17 アルバック成膜株式会社 マスクブランク、ハーフトーンマスクおよびその製造方法
CN109254493A (zh) * 2018-11-30 2019-01-22 深圳市路维光电股份有限公司 半色调掩膜版制作方法
KR102737514B1 (ko) * 2020-06-11 2024-12-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN112180676A (zh) * 2020-09-23 2021-01-05 武汉华星光电技术有限公司 半色调掩模版、显示面板的制备方法及紫外掩膜版

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0961987A (ja) * 1995-08-22 1997-03-07 Sony Corp 位相シフト露光マスク及びその製造方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
JP2005037933A (ja) * 2003-06-30 2005-02-10 Hoya Corp グレートーンマスクの製造方法及びグレートーンマスク
JP2005084682A (ja) * 2003-09-05 2005-03-31 Schott Ag 減衰性移相マスクブランク及びフォトマスク

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0991987A (ja) 1995-09-27 1997-04-04 Nec Corp サンプルホールド回路
JP2002189281A (ja) 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
US6803160B2 (en) * 2001-12-13 2004-10-12 Dupont Photomasks, Inc. Multi-tone photomask and method for manufacturing the same
US6828068B2 (en) * 2003-01-23 2004-12-07 Photronics, Inc. Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same
JP2007504497A (ja) 2003-09-05 2007-03-01 ショット アクチエンゲゼルシャフト 減衰移相マスクブランク及びフォトマスク
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
KR100848815B1 (ko) * 2004-11-08 2008-07-28 엘지마이크론 주식회사 하프톤 마스크 및 그 제조방법 및 이를 이용한평판패널디스플레이
JP4339232B2 (ja) 2004-11-26 2009-10-07 Ｎｅｃ液晶テクノロジー株式会社 アクテイブマトリクス型表示装置用フォトマスク及びその製造方法
KR100812253B1 (ko) 2006-01-20 2008-03-10 주식회사 에스앤에스텍 그레이톤 포토마스크의 제조방법, 그레이톤 포토마스크 및그레이톤 블랭크마스크
CN101025564B (zh) * 2006-02-20 2010-12-15 Hoya株式会社 四级光掩模制造方法和其中所使用的光掩模坯料
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0961987A (ja) * 1995-08-22 1997-03-07 Sony Corp 位相シフト露光マスク及びその製造方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
JP2005037933A (ja) * 2003-06-30 2005-02-10 Hoya Corp グレートーンマスクの製造方法及びグレートーンマスク
JP2005084682A (ja) * 2003-09-05 2005-03-31 Schott Ag 減衰性移相マスクブランク及びフォトマスク

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101168406B1 (ko) 2009-05-26 2012-07-25 엘지이노텍 주식회사 하프톤 마스크 및 이의 제조 방법
WO2012090439A1 (ja) * 2010-12-27 2012-07-05 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス及びハーフトーンマスクの製造方法
JP2012137643A (ja) * 2010-12-27 2012-07-19 Ulvac Seimaku Kk ハーフトーンマスク、ハーフトーンマスクブランクス及びハーフトーンマスクの製造方法
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2017146365A (ja) * 2016-02-15 2017-08-24 関東化學株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP2020060664A (ja) * 2018-10-09 2020-04-16 アルバック成膜株式会社 マスクブランクス、ハーフトーンマスク、製造方法
JP2022009498A (ja) * 2020-04-28 2022-01-14 株式会社エスケーエレクトロニクス フォトマスク及びその製造方法
JP7174826B2 (ja) 2020-04-28 2022-11-17 株式会社エスケーエレクトロニクス フォトマスク及びその製造方法

Also Published As

Publication number Publication date
TW200938947A (en) 2009-09-16
US8216745B2 (en) 2012-07-10
KR101242625B1 (ko) 2013-03-19
JP4987075B2 (ja) 2012-07-25
CN101842744A (zh) 2010-09-22
JPWO2009057660A1 (ja) 2011-03-10
KR20100077032A (ko) 2010-07-06
US20100261096A1 (en) 2010-10-14
CN101842744B (zh) 2013-01-02
TWI391778B (zh) 2013-04-01

Similar Documents

Publication Publication Date Title
WO2009057660A1 (ja) ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法
KR102366646B1 (ko) 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
TW200737400A (en) Etch resistant wafer processing apparatus and method for producing the same
EP1749901A3 (en) Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
KR101560385B1 (ko) 위상 쉬프트 마스크 블랭크, 위상 쉬프트 마스크 및 그 제조 방법
WO2009062123A3 (en) Pitch reduction using oxide spacer
DE60230892D1 (de) Elektrochromischer film und einrichtung damit
SE0202036D0 (sv) Wear resistant coating with enhanced toughness
WO2007110552A3 (fr) Systeme de couches a faible emissivite et haute tenue a la chaleur pour substrats transparents
WO2005024094A3 (en) In-situ-etch-assisted hdp deposition using sif4 and hydrogen
WO2005003404A3 (en) Composite refractory metal carbide coating on a substrate and method for making thereof
EP1418466A3 (en) Halftone phase shift mask blank, and method of manufacture
WO2002041077A3 (en) Attenuating extreme ultraviolet (euv) phase-shifting mask fabrication method
ATE370523T1 (de) Mit einer schutzhülle ausgestattete lithium- mikrobatterie und verfahren zur herstellung einer solchen mikrobatterie
US20040023431A1 (en) Method for fabricating n-type carbon nanotube device
EP1592047A3 (en) Integrated passive devices and method of manufacture
WO2006033822A3 (en) Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
WO2010147839A3 (en) Silicon-rich nitride etch stop layer for vapor hf etching in mems device fabrication
KR101785177B1 (ko) 위상 시프트 마스크 및 그의 제조방법
WO2009003206A3 (de) Al-Ti-Ru-N-C HARTSTOFFSCHICHT
US6749968B2 (en) Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same
US20090233386A1 (en) Method for forming an ink jetting device
KR20170118838A (ko) 외장 지르코니아 세라믹 부재 및 그 제조 방법
WO2005000765A3 (ja) ダミーウェハ及びその製造方法
US9181618B2 (en) Magnetic layer patterning by ion implantation

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880114579.7

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 2009513913

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08845947

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12740645

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107010968

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08845947

Country of ref document: EP

Kind code of ref document: A1