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WO2009014180A1 - 放射線検出器及びその製造方法 - Google Patents

放射線検出器及びその製造方法 Download PDF

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Publication number
WO2009014180A1
WO2009014180A1 PCT/JP2008/063292 JP2008063292W WO2009014180A1 WO 2009014180 A1 WO2009014180 A1 WO 2009014180A1 JP 2008063292 W JP2008063292 W JP 2008063292W WO 2009014180 A1 WO2009014180 A1 WO 2009014180A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
radiation detector
manufacturing
same
scintillator layer
Prior art date
Application number
PCT/JP2008/063292
Other languages
English (en)
French (fr)
Inventor
Katsuhisa Homma
Shinetsu Fujieda
Original Assignee
Toshiba Electron Tubes & Devices Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Electron Tubes & Devices Co., Ltd. filed Critical Toshiba Electron Tubes & Devices Co., Ltd.
Priority to EP08791544.3A priority Critical patent/EP2194401B1/en
Priority to KR1020097024677A priority patent/KR101120244B1/ko
Publication of WO2009014180A1 publication Critical patent/WO2009014180A1/ja
Priority to US12/692,902 priority patent/US8158949B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

　放射線検出器は、光電変換素子と、前記光電変換素子上に形成され、放射線を蛍光に変換するシンチレータ層（13）と、前記シンチレータ層上に形成され、前記シンチレータ層からの蛍光を反射させる光散乱性粒子及び前記光散乱性粒子間を結合するバインダ材を含有し、かつ前記光散乱性粒子の周辺部に前記バインダ材が充填されていない空乏部が形成されている反射膜（１４）と、を備えていることを特徴とする。
PCT/JP2008/063292 2007-07-26 2008-07-24 放射線検出器及びその製造方法 WO2009014180A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08791544.3A EP2194401B1 (en) 2007-07-26 2008-07-24 Radiation detector and method for manufacturing the same
KR1020097024677A KR101120244B1 (ko) 2007-07-26 2008-07-24 방사선 검출기와 그 제조 방법
US12/692,902 US8158949B2 (en) 2007-07-26 2010-01-25 Radiation detector and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-194590 2007-07-26
JP2007194590A JP5022805B2 (ja) 2007-07-26 2007-07-26 放射線検出器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/692,902 Continuation US8158949B2 (en) 2007-07-26 2010-01-25 Radiation detector and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2009014180A1 true WO2009014180A1 (ja) 2009-01-29

Family

ID=40281428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063292 WO2009014180A1 (ja) 2007-07-26 2008-07-24 放射線検出器及びその製造方法

Country Status (5)

Country Link
US (1) US8158949B2 (ja)
EP (1) EP2194401B1 (ja)
JP (1) JP5022805B2 (ja)
KR (1) KR101120244B1 (ja)
WO (1) WO2009014180A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102667525A (zh) * 2009-12-18 2012-09-12 株式会社东芝 放射线检测器及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101676364B1 (ko) * 2010-01-22 2016-11-16 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
JP5649872B2 (ja) 2010-08-24 2015-01-07 浜松ホトニクス株式会社 放射線検出器の製造方法
JP5629593B2 (ja) * 2011-02-01 2014-11-19 株式会社東芝 放射線検出器
JP6200171B2 (ja) * 2012-06-04 2017-09-20 キヤノン株式会社 放射線検出装置及び撮像システム
JP6515958B2 (ja) * 2012-06-25 2019-05-22 ソニー株式会社 放射線検出器及びその製造方法
TWI521686B (zh) * 2013-05-24 2016-02-11 友達光電股份有限公司 光偵測器及其製造方法
JP6226579B2 (ja) * 2013-06-13 2017-11-08 東芝電子管デバイス株式会社 放射線検出器及びその製造方法
US9905607B2 (en) * 2015-07-28 2018-02-27 General Electric Company Radiation detector fabrication
JP2017161408A (ja) * 2016-03-10 2017-09-14 コニカミノルタ株式会社 シンチレータ、シンチレータパネルおよび放射線画像変換パネル
KR102186321B1 (ko) 2018-03-21 2020-12-03 김선용 레저용 이동식 파고라

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005283483A (ja) 2004-03-30 2005-10-13 Toshiba Corp Ｘ線検出器
JP2007033452A (ja) * 2005-07-28 2007-02-08 Siemens Ag Ｘ線検出器のための反射器材料

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543485A (en) * 1981-11-24 1985-09-24 Hitachi Chemical Company, Ltd. Scintillator for radiation detection and process for producing the same
JPH0519060A (ja) 1991-07-10 1993-01-26 Shin Etsu Chem Co Ltd シンチレータの製造方法
SE521032C2 (sv) * 2000-06-05 2003-09-23 Xcounter Ab Anordning och förfarande för detektering av joniserande strålning innefattande ljusdämpare mellan fotokatod och elektronlavinförstärkare
JP4451112B2 (ja) * 2003-10-24 2010-04-14 株式会社日立メディコ 放射線検出器及びそれを用いた放射線画像診断装置
JP2006052985A (ja) * 2004-08-10 2006-02-23 Canon Inc 放射線検出装置の製造方法と放射線検出システム
JP2006052980A (ja) * 2004-08-10 2006-02-23 Canon Inc 放射線検出装置
JP4886245B2 (ja) * 2005-08-26 2012-02-29 株式会社東芝 放射線検出器
DE102006023732A1 (de) * 2006-05-19 2008-02-07 Siemens Ag Strahlungsdetektor für Röntgen- oder Gammastrahlen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005283483A (ja) 2004-03-30 2005-10-13 Toshiba Corp Ｘ線検出器
JP2007033452A (ja) * 2005-07-28 2007-02-08 Siemens Ag Ｘ線検出器のための反射器材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2194401A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102667525A (zh) * 2009-12-18 2012-09-12 株式会社东芝 放射线检测器及其制造方法

Also Published As

Publication number Publication date
KR20100007924A (ko) 2010-01-22
US20100116997A1 (en) 2010-05-13
EP2194401B1 (en) 2014-07-16
JP5022805B2 (ja) 2012-09-12
EP2194401A1 (en) 2010-06-09
JP2009031098A (ja) 2009-02-12
EP2194401A4 (en) 2013-08-07
KR101120244B1 (ko) 2012-03-20
US8158949B2 (en) 2012-04-17

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