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WO2008146602A1 - 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 - Google Patents

放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 Download PDF

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Publication number
WO2008146602A1
WO2008146602A1 PCT/JP2008/058834 JP2008058834W WO2008146602A1 WO 2008146602 A1 WO2008146602 A1 WO 2008146602A1 JP 2008058834 W JP2008058834 W JP 2008058834W WO 2008146602 A1 WO2008146602 A1 WO 2008146602A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation detector
supporting substrate
organic semiconductor
transparent electrodes
radiation
Prior art date
Application number
PCT/JP2008/058834
Other languages
English (en)
French (fr)
Inventor
Satoshi Masuda
Tomoo Izumi
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to US12/600,668 priority Critical patent/US20100163737A1/en
Priority to JP2009516244A priority patent/JP4894921B2/ja
Publication of WO2008146602A1 publication Critical patent/WO2008146602A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

　支持基板の一方の面に形成された放射線を可視光に変換する蛍光体からなるシンチレータ層と、支持基板の他方の面にマトリックス状に複数形成された透明電極と、透明電極の上に形成された有機半導体材料を含む光電変換層と、有機半導体層の上に形成された上部電極と、を有し、支持基板は、シンチレータ層に放射線が照射されることにより発光する可視光を有機半導体層に集光する集光素子が透明電極と対向する位置にマトリックス状に埋め込まれていることを特徴とする放射線検出器。
PCT/JP2008/058834 2007-05-24 2008-05-14 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 WO2008146602A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/600,668 US20100163737A1 (en) 2007-05-24 2008-05-14 Radiation detector, method of manufacturing radiation detector, and method of manufacturing supporting substrate
JP2009516244A JP4894921B2 (ja) 2007-05-24 2008-05-14 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-137602 2007-05-24
JP2007137602 2007-05-24

Publications (1)

Publication Number Publication Date
WO2008146602A1 true WO2008146602A1 (ja) 2008-12-04

Family

ID=40074869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058834 WO2008146602A1 (ja) 2007-05-24 2008-05-14 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法

Country Status (3)

Country Link
US (1) US20100163737A1 (ja)
JP (1) JP4894921B2 (ja)
WO (1) WO2008146602A1 (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038912A (ja) * 2009-08-12 2011-02-24 Konica Minolta Medical & Graphic Inc 放射線画像検出装置
JP2011172904A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172910A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172909A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011183146A (ja) * 2010-02-15 2011-09-22 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011194216A (ja) * 2010-02-23 2011-10-06 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
WO2011136244A1 (ja) * 2010-04-30 2011-11-03 富士フイルム株式会社 放射線撮像装置
JP2011221000A (ja) * 2010-03-26 2011-11-04 Fujifilm Corp 放射線検出器の管理方法、放射線画像撮影装置及び放射線画像撮影システム
JP2012030049A (ja) * 2010-06-30 2012-02-16 Fujifilm Corp 放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
KR20140045504A (ko) * 2011-06-22 2014-04-16 지멘스 악티엔게젤샤프트 유기 감광성 요소를 이용한 약광 검출
US8798235B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8798236B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8929510B2 (en) 2010-06-30 2015-01-06 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US9168016B2 (en) 2010-01-29 2015-10-27 Fujifilm Corporation Radiographic image capturing apparatus, radiographic image capturing system, and method of supplying electric power to radiographic image capturing apparatus
JP2016524152A (ja) * 2013-06-27 2016-08-12 ヴァリアン メディカル システムズ インコーポレイテッド Ｔｆｔフラットパネルにｃｍｏｓセンサを埋設したｘ線イメージャ

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TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
DE102010043749A1 (de) * 2010-11-11 2012-05-16 Siemens Aktiengesellschaft Hybride organische Fotodiode
JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
JP5604323B2 (ja) * 2011-01-31 2014-10-08 富士フイルム株式会社 放射線画像検出装置
CN102790067B (zh) * 2012-07-26 2014-12-10 北京京东方光电科技有限公司 一种传感器及其制造方法
DE102015006839A1 (de) * 2015-06-02 2016-12-08 Karlsruher Institut für Technologie Optoelektronische Struktur zur Detektion von elektromagnetischer Strahlung
JP7102114B2 (ja) * 2016-11-11 2022-07-19 キヤノン株式会社 光電変換素子、撮像素子および撮像装置
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

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JP2004340737A (ja) * 2003-05-15 2004-12-02 Toshiba Corp 放射線検出器及びその製造方法
JP2005032793A (ja) * 2003-07-08 2005-02-03 Matsushita Electric Ind Co Ltd 有機光電変換素子
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038912A (ja) * 2009-08-12 2011-02-24 Konica Minolta Medical & Graphic Inc 放射線画像検出装置
US9168016B2 (en) 2010-01-29 2015-10-27 Fujifilm Corporation Radiographic image capturing apparatus, radiographic image capturing system, and method of supplying electric power to radiographic image capturing apparatus
JP2011172904A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172910A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172909A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
US10201065B2 (en) 2010-01-29 2019-02-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8798235B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8798236B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
JP2011183146A (ja) * 2010-02-15 2011-09-22 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011194216A (ja) * 2010-02-23 2011-10-06 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011221000A (ja) * 2010-03-26 2011-11-04 Fujifilm Corp 放射線検出器の管理方法、放射線画像撮影装置及び放射線画像撮影システム
WO2011136244A1 (ja) * 2010-04-30 2011-11-03 富士フイルム株式会社 放射線撮像装置
JP2012030049A (ja) * 2010-06-30 2012-02-16 Fujifilm Corp 放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
US8929510B2 (en) 2010-06-30 2015-01-06 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
KR20140045504A (ko) * 2011-06-22 2014-04-16 지멘스 악티엔게젤샤프트 유기 감광성 요소를 이용한 약광 검출
KR102001694B1 (ko) * 2011-06-22 2019-07-18 지멘스 악티엔게젤샤프트 유기 감광성 요소를 이용한 약광 검출
JP2016524152A (ja) * 2013-06-27 2016-08-12 ヴァリアン メディカル システムズ インコーポレイテッド Ｔｆｔフラットパネルにｃｍｏｓセンサを埋設したｘ線イメージャ

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Publication number Publication date
JP4894921B2 (ja) 2012-03-14
US20100163737A1 (en) 2010-07-01
JPWO2008146602A1 (ja) 2010-08-19

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