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WO2008147105A3 - Manufacturing method of vertically structured gan led device - Google Patents

Manufacturing method of vertically structured gan led device Download PDF

Info

Publication number
WO2008147105A3
WO2008147105A3 PCT/KR2008/002986 KR2008002986W WO2008147105A3 WO 2008147105 A3 WO2008147105 A3 WO 2008147105A3 KR 2008002986 W KR2008002986 W KR 2008002986W WO 2008147105 A3 WO2008147105 A3 WO 2008147105A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
layer
gan
vertically structured
led
Prior art date
Application number
PCT/KR2008/002986
Other languages
French (fr)
Other versions
WO2008147105A2 (en
Inventor
Hyun Chul Ko
Meoung-Whan Cho
Pil Guk Jang
Byung Il Cho
Original Assignee
Wavesquare Inc
Hyun Chul Ko
Meoung-Whan Cho
Pil Guk Jang
Byung Il Cho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wavesquare Inc, Hyun Chul Ko, Meoung-Whan Cho, Pil Guk Jang, Byung Il Cho filed Critical Wavesquare Inc
Publication of WO2008147105A2 publication Critical patent/WO2008147105A2/en
Publication of WO2008147105A3 publication Critical patent/WO2008147105A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)

Abstract

The present invention relates to a manufacturing method of a vertically structured GaN-based LED, especially to a manufacturing method of a vertically structured GaN-based LED device having improved yield and device characteristics by minimizing the physical stress applied to an LED device when performing a separation process of a sapphire substrate. And, a manufacturing method of a vertically structured GaN LED of the present invention is comprised of the steps of: (a) forming a buffer layer on a sapphire substrate to be removed; (b) growing a GaN-based LED structure having an n-type GaN layer, an active layer, and a p-type GaN layer to form multiple LED devices separately on the buffer layer formed in the above step (a); (c) forming an electrode layer and a structure supporting layer sequentially on the multiple LED devices formed in the above step (b); and (d) separating the sapphire substrate from the multiple LED devices formed in the above step (b) by removing the buffer layer using a CLO process.
PCT/KR2008/002986 2007-05-30 2008-05-28 Manufacturing method of vertically structured gan led device WO2008147105A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0052548 2007-05-30
KR1020070052548A KR100858322B1 (en) 2007-05-30 2007-05-30 Method for manufacturing gallium nitride based LED device having vertical structure

Publications (2)

Publication Number Publication Date
WO2008147105A2 WO2008147105A2 (en) 2008-12-04
WO2008147105A3 true WO2008147105A3 (en) 2009-01-22

Family

ID=40023029

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/002986 WO2008147105A2 (en) 2007-05-30 2008-05-28 Manufacturing method of vertically structured gan led device

Country Status (2)

Country Link
KR (1) KR100858322B1 (en)
WO (1) WO2008147105A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101149677B1 (en) * 2010-01-20 2012-07-11 주식회사 엘지실트론 A manufacturing method for flexible device and flexible device, solar cell, LED manufactured by the same
CN103236474A (en) * 2013-04-09 2013-08-07 中国科学院半导体研究所 Method for manufacturing optionally cut high-voltage LED devices
KR101806339B1 (en) 2016-06-28 2017-12-08 한국광기술원 Micro LED manufacturing method for transparent display and micro LED for transparent display
CN106409997A (en) * 2016-11-23 2017-02-15 映瑞光电科技(上海)有限公司 LED chip and formation method thereof
US10811575B2 (en) * 2018-07-30 2020-10-20 Facebook Technologies, Llc Laser lift-off masks

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003088318A2 (en) * 2002-04-09 2003-10-23 Oriol, Inc. Method of fabricating vertical structure leds
JP2005051100A (en) * 2003-07-30 2005-02-24 Shin Etsu Handotai Co Ltd Method for manufacturing semiconductor device
US20050173692A1 (en) * 2002-12-27 2005-08-11 Park Young H. Vertical GaN light emitting diode and method for manufacturing the same
US20060189020A1 (en) * 2005-02-22 2006-08-24 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same
KR100648813B1 (en) * 2005-12-23 2006-11-23 엘지전자 주식회사 Vertical light emitting device manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003088318A2 (en) * 2002-04-09 2003-10-23 Oriol, Inc. Method of fabricating vertical structure leds
US20050173692A1 (en) * 2002-12-27 2005-08-11 Park Young H. Vertical GaN light emitting diode and method for manufacturing the same
JP2005051100A (en) * 2003-07-30 2005-02-24 Shin Etsu Handotai Co Ltd Method for manufacturing semiconductor device
US20060189020A1 (en) * 2005-02-22 2006-08-24 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same
KR100648813B1 (en) * 2005-12-23 2006-11-23 엘지전자 주식회사 Vertical light emitting device manufacturing method

Also Published As

Publication number Publication date
WO2008147105A2 (en) 2008-12-04
KR100858322B1 (en) 2008-09-11

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