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WO2008117867A1 - Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage - Google Patents

Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage Download PDF

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Publication number
WO2008117867A1
WO2008117867A1 PCT/JP2008/056131 JP2008056131W WO2008117867A1 WO 2008117867 A1 WO2008117867 A1 WO 2008117867A1 JP 2008056131 W JP2008056131 W JP 2008056131W WO 2008117867 A1 WO2008117867 A1 WO 2008117867A1
Authority
WO
WIPO (PCT)
Prior art keywords
lower layer
layer film
resist lower
film composition
dual damascene
Prior art date
Application number
PCT/JP2008/056131
Other languages
English (en)
Japanese (ja)
Inventor
Nakaatsu Yoshimura
Norihiro Natsume
Yousuke Konno
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2009506383A priority Critical patent/JP5177132B2/ja
Publication of WO2008117867A1 publication Critical patent/WO2008117867A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne une composition de couche mince inférieure de résist, qui a une teneur en atome d'azote de 10 % en masse ou plus dans une couche mince inférieure de résist lorsque la couche mince inférieure de résist d'épaisseur de 300 nm est formée par l'application d'un résist sur un matériau de base et séchage du résist par la chaleur à 250°C pendant 60 secondes.
PCT/JP2008/056131 2007-03-28 2008-03-28 Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage WO2008117867A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009506383A JP5177132B2 (ja) 2007-03-28 2008-03-28 レジスト下層膜用組成物及びデュアルダマシン構造の形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-086001 2007-03-28
JP2007086001 2007-03-28

Publications (1)

Publication Number Publication Date
WO2008117867A1 true WO2008117867A1 (fr) 2008-10-02

Family

ID=39788598

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056131 WO2008117867A1 (fr) 2007-03-28 2008-03-28 Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage

Country Status (3)

Country Link
JP (1) JP5177132B2 (fr)
TW (1) TWI442186B (fr)
WO (1) WO2008117867A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010217306A (ja) * 2009-03-13 2010-09-30 Jsr Corp パターン形成方法及び平坦化膜形成用組成物
JP2010247335A (ja) * 2009-04-10 2010-11-04 Fujifilm Corp ガスバリアフィルムおよびガスバリアフィルムの製造方法
WO2015098525A1 (fr) * 2013-12-27 2015-07-02 日産化学工業株式会社 Composition de formation de film de sous-couche de réserve contenant un copolymère qui possède un noyau triazine et un atome de soufre dans la chaîne principale
JPWO2019009143A1 (ja) * 2017-07-04 2020-04-16 富士フイルム株式会社 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット
JPWO2020162183A1 (ja) * 2019-02-07 2021-10-21 三井化学株式会社 下層膜形成用材料、レジスト下層膜および積層体

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950130A (ja) * 1995-08-04 1997-02-18 Sumitomo Chem Co Ltd 感光性樹脂用反射防止下地材料組成物
JPH10228113A (ja) * 1996-12-13 1998-08-25 Tokyo Ohka Kogyo Co Ltd リソグラフィー用下地材
JP2002148791A (ja) * 2000-11-09 2002-05-22 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物
JP2004014841A (ja) * 2002-06-07 2004-01-15 Fujitsu Ltd 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5047504B2 (ja) * 2005-02-05 2012-10-10 三星電子株式会社 ビアキャッピング保護膜を使用する半導体素子のデュアルダマシン配線の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950130A (ja) * 1995-08-04 1997-02-18 Sumitomo Chem Co Ltd 感光性樹脂用反射防止下地材料組成物
JPH10228113A (ja) * 1996-12-13 1998-08-25 Tokyo Ohka Kogyo Co Ltd リソグラフィー用下地材
JP2002148791A (ja) * 2000-11-09 2002-05-22 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物
JP2004014841A (ja) * 2002-06-07 2004-01-15 Fujitsu Ltd 半導体装置及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010217306A (ja) * 2009-03-13 2010-09-30 Jsr Corp パターン形成方法及び平坦化膜形成用組成物
JP2010247335A (ja) * 2009-04-10 2010-11-04 Fujifilm Corp ガスバリアフィルムおよびガスバリアフィルムの製造方法
WO2015098525A1 (fr) * 2013-12-27 2015-07-02 日産化学工業株式会社 Composition de formation de film de sous-couche de réserve contenant un copolymère qui possède un noyau triazine et un atome de soufre dans la chaîne principale
JPWO2015098525A1 (ja) * 2013-12-27 2017-03-23 日産化学工業株式会社 トリアジン環及び硫黄原子を主鎖に有する共重合体を含むレジスト下層膜形成組成物
US9678427B2 (en) 2013-12-27 2017-06-13 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing copolymer that has triazine ring and sulfur atom in main chain
TWI648599B (zh) * 2013-12-27 2019-01-21 日商日產化學工業股份有限公司 含有在主鏈具三嗪環及硫原子之共聚物的阻劑下層膜形成組成物
JPWO2019009143A1 (ja) * 2017-07-04 2020-04-16 富士フイルム株式会社 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット
JPWO2020162183A1 (ja) * 2019-02-07 2021-10-21 三井化学株式会社 下層膜形成用材料、レジスト下層膜および積層体

Also Published As

Publication number Publication date
JPWO2008117867A1 (ja) 2010-07-15
TW200848937A (en) 2008-12-16
TWI442186B (zh) 2014-06-21
JP5177132B2 (ja) 2013-04-03

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