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WO2008081943A1 - 研磨液組成物 - Google Patents

研磨液組成物 Download PDF

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Publication number
WO2008081943A1
WO2008081943A1 PCT/JP2007/075309 JP2007075309W WO2008081943A1 WO 2008081943 A1 WO2008081943 A1 WO 2008081943A1 JP 2007075309 W JP2007075309 W JP 2007075309W WO 2008081943 A1 WO2008081943 A1 WO 2008081943A1
Authority
WO
WIPO (PCT)
Prior art keywords
peak
range
diffraction angle
liquid composition
polishing liquid
Prior art date
Application number
PCT/JP2007/075309
Other languages
English (en)
French (fr)
Inventor
Mami Shirota
Yasuhiro Yoneda
Original Assignee
Kao Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007324025A external-priority patent/JP5248096B2/ja
Application filed by Kao Corporation filed Critical Kao Corporation
Priority to KR1020097012348A priority Critical patent/KR101388956B1/ko
Priority to EP07860512A priority patent/EP2107093B1/en
Priority to US12/520,747 priority patent/US8357311B2/en
Priority to CN2007800479599A priority patent/CN101568615B/zh
Publication of WO2008081943A1 publication Critical patent/WO2008081943A1/ja
Priority to US13/717,589 priority patent/US8617994B2/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B24B7/241—Methods
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C01G25/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　セリウムとジルコニウムとを含む複合酸化物粒子と、分散剤と、水系媒体とを含む研磨液組成物であって、ＣｕＫα１線（λ＝０．１５４０５０ｎｍ）を照射することにより得られる前記複合酸化物粒子の粉末Ｘ線回折スペクトル中に、回折角２θ（θはブラック角）領域２８．６１～２９．６７°内に頂点があるピーク（第１ピーク）、回折角２θ領域３３．１４～３４．５３°内に頂点があるピーク（第２ピーク）、回折角２θ領域４７．５７～４９．６３°内に頂点があるピーク（第３ピーク）、回折角２θ領域５６．４５～５８．９１°内に頂点があるピーク（第４ピーク）、が各々存在し、前記第１ピークの半値幅が０．８°以下である。
PCT/JP2007/075309 2006-12-28 2007-12-28 研磨液組成物 WO2008081943A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097012348A KR101388956B1 (ko) 2006-12-28 2007-12-28 연마액 조성물
EP07860512A EP2107093B1 (en) 2006-12-28 2007-12-28 Polishing liquid composition
US12/520,747 US8357311B2 (en) 2006-12-28 2007-12-28 Polishing liquid composition
CN2007800479599A CN101568615B (zh) 2006-12-28 2007-12-28 研磨液组合物
US13/717,589 US8617994B2 (en) 2006-12-28 2012-12-17 Polishing liquid composition

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP2006-356517 2006-12-28
JP2006356517 2006-12-28
JP2007099866 2007-04-05
JP2007-099866 2007-04-05
JP2007-113445 2007-04-23
JP2007113445 2007-04-23
JP2007-139661 2007-05-25
JP2007139661 2007-05-25
JP2007141356 2007-05-29
JP2007-141356 2007-05-29
JP2007324025A JP5248096B2 (ja) 2006-12-28 2007-12-14 研磨液組成物
JP2007-324025 2007-12-14

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/520,747 A-371-Of-International US8357311B2 (en) 2006-12-28 2007-12-28 Polishing liquid composition
US13/717,589 Division US8617994B2 (en) 2006-12-28 2012-12-17 Polishing liquid composition

Publications (1)

Publication Number Publication Date
WO2008081943A1 true WO2008081943A1 (ja) 2008-07-10

Family

ID=41036787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/075309 WO2008081943A1 (ja) 2006-12-28 2007-12-28 研磨液組成物

Country Status (6)

Country Link
US (2) US8357311B2 (ja)
EP (1) EP2107093B1 (ja)
KR (1) KR101388956B1 (ja)
CN (1) CN101568615B (ja)
TW (1) TWI441905B (ja)
WO (1) WO2008081943A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016063A (ja) * 2008-07-01 2010-01-21 Kao Corp 研磨液組成物
JP2010016064A (ja) * 2008-07-01 2010-01-21 Kao Corp 研磨液組成物
WO2011132665A1 (ja) * 2010-04-20 2011-10-27 花王株式会社 ハードディスク用アルミノシリケートガラス基板の製造方法
JP2013527985A (ja) * 2010-04-16 2013-07-04 キャボット マイクロエレクトロニクス コーポレイション バルクシリコンの研磨組成物及び研磨方法
WO2015136832A1 (ja) * 2014-03-11 2015-09-17 信越化学工業株式会社 研磨組成物及び研磨方法並びに研磨組成物の製造方法
WO2016038771A1 (ja) * 2014-09-12 2016-03-17 信越化学工業株式会社 研磨組成物及び研磨方法

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JP6156207B2 (ja) 2013-04-02 2017-07-05 信越化学工業株式会社 合成石英ガラス基板の製造方法
US10428271B2 (en) 2013-08-30 2019-10-01 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN103509472A (zh) * 2013-10-25 2014-01-15 上海华明高纳稀土新材料有限公司 铈基混合稀土抛光粉及其制备方法
WO2015182756A1 (ja) * 2014-05-30 2015-12-03 日立化成株式会社 Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット、及び研磨方法
CN105778774A (zh) * 2014-12-23 2016-07-20 安集微电子（上海）有限公司 一种化学机械抛光液
ES2757750T3 (es) * 2015-01-20 2020-04-30 Cerion Llc Nanoceria quelada con EDDS con actividad de tipo catalasa
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
KR102509260B1 (ko) * 2015-11-20 2023-03-14 삼성디스플레이 주식회사 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법
US10580666B2 (en) * 2016-07-01 2020-03-03 Corning Incorporated Carrier substrates for semiconductor processing
JP6761339B2 (ja) * 2016-12-28 2020-09-23 花王株式会社 酸化セリウム砥粒
JP6827318B2 (ja) * 2016-12-28 2021-02-10 花王株式会社 酸化セリウム砥粒
CN110582465B (zh) * 2017-06-01 2022-11-04 日挥触媒化成株式会社 氧化铈系复合微粒分散液、其制造方法及包含氧化铈系复合微粒分散液的研磨用磨粒分散液
CN109251677B (zh) * 2017-07-13 2021-08-13 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
WO2019043819A1 (ja) * 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
JP7028592B2 (ja) * 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
WO2019069370A1 (ja) 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
CN107629701B (zh) * 2017-11-02 2021-04-13 东旭光电科技股份有限公司 抛光液及其制备方法
CN111566179B (zh) * 2017-11-15 2022-03-04 圣戈本陶瓷及塑料股份有限公司 用于实施材料去除操作的组合物及其形成方法
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products

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EP2107093B1 (en) 2013-02-13
US20130109194A1 (en) 2013-05-02
US8617994B2 (en) 2013-12-31
EP2107093A4 (en) 2011-06-29
KR20090091761A (ko) 2009-08-28
CN101568615B (zh) 2013-02-06
US8357311B2 (en) 2013-01-22
EP2107093A1 (en) 2009-10-07
TWI441905B (zh) 2014-06-21
TW200900489A (en) 2009-01-01
CN101568615A (zh) 2009-10-28
US20100056026A1 (en) 2010-03-04

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