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WO2008054240A1 - Growth manipulator of a vacuum chamber used for growing semiconductor heterostructures - Google Patents

Growth manipulator of a vacuum chamber used for growing semiconductor heterostructures Download PDF

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Publication number
WO2008054240A1
WO2008054240A1 PCT/RU2007/000087 RU2007000087W WO2008054240A1 WO 2008054240 A1 WO2008054240 A1 WO 2008054240A1 RU 2007000087 W RU2007000087 W RU 2007000087W WO 2008054240 A1 WO2008054240 A1 WO 2008054240A1
Authority
WO
WIPO (PCT)
Prior art keywords
tubular element
hollow tubular
vacuum chamber
manipulator
elements
Prior art date
Application number
PCT/RU2007/000087
Other languages
French (fr)
Russian (ru)
Inventor
Alexei Nikolaevich Alexeev
Dmitry Arkadievich Baranov
Vladislav Alexeevich Vasiliev
Original Assignee
'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited filed Critical 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited
Priority to DE212007000078U priority Critical patent/DE212007000078U1/en
Publication of WO2008054240A1 publication Critical patent/WO2008054240A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the utility model relates to the technique used in the growth of thin films of semiconductors by molecular beam epitaxy.
  • the manipulator comprises a rod with a substrate holder at the lower end.
  • a heater is mounted on the rod above the substrate holder.
  • the holder can rotate relative to the longitudinal axis of the rod, GB 21817447 A.
  • the disadvantage of this device is the lack of means for vertical movement of the substrate holder, which complicates the manipulation of the substrate and affects the quality of the grown semiconductor heterostructures.
  • a growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a cover.
  • the growth arm contains a rod with a heater at the lower end.
  • the rod is installed inside the hollow tubular element and mates with it through bearings.
  • the hollow tubular element is equipped with a substrate holder, as well as a vertical reciprocating drive, made in the form of a bellows.
  • the bellows is equipped with a mechanism for compressing and stretching it.
  • the substrate holder is installed with the possibility of capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing the substrate holder on them, and their vertical elements are attached with their upper ends to the disk with a Central hole.
  • the hollow tubular element is passed through this hole and is equipped with a mechanism for its rotation.
  • a carriage is attached along the contour of the central hole, provided with rollers pressed against the outer surface of the hollow tubular element, EP 92117113.8 A, publication NO 529687 A2.
  • the objective of this utility model is to provide the ability to adjust the distance limits between the heater and the substrate, which allows the use of a growth manipulator in vacuum chambers of various sizes; in addition, the task of simplifying and reducing the cost of the design of the device.
  • this problem is solved due to the fact that in a growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a lid containing a rod with a heater at the lower end, a hollow tubular element, a substrate holder, and the rod is installed inside the hollow tubular element, and the substrate holder is installed with the possibility of its capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing a substrate holder on them, and their vertical elements are attached with their upper ends to the disk with the central hole, the hollow tubular element is passed through the central hole of the disk to which a carriage is attached along the contour of the central hole, provided with rollers pressed against the outer surface of the hollow tubular element , new is that on the inner surface of the lid of the vacuum chamber are made with the possibility of abutment in them carriage height-adjustable stops on the outer surface of the logo of the tubular member reinforced with the possibility of abutment of roller
  • FIG.1 is a longitudinal section of the device; figure 2 is a section A-A in figure 1.
  • the growth manipulator of the vacuum chamber for growing semiconductor heterostructures is placed in the vacuum chamber, which includes a housing 1 and a cover 2.
  • the growth manipulator comprises a rod 3 with a heater 4 mounted on its lower the end.
  • the rod 3 is installed inside the hollow tubular element 5.
  • the holder 6 of the substrate 7 is installed with the possibility of its capture and release in the gripping mechanism, including L-shaped consoles 8.
  • the horizontal elements of the consoles 8 are made with the possibility of placing on them the holder 6 of the substrate 7, and their vertical elements attached to the upper ends of the disk 9 with a central hole 10.
  • the hollow tubular member is passed through the hole 10. by the disk 9 to the contour of the central opening 10 is fixed carriage H 5 provided with rollers 12. In a particular Prima there are 4 pairs of rollers 12.
  • the rollers 12 are pressed against the outer surface of the hollow tubular element 5.
  • the carriages 11 are mounted with the possibility of abutment in them, the height-adjustable stops 13.
  • the stops 13 are screws screwed into cover 2.
  • stops 14 are fixed with the possibility of abutment of the rollers 12 on them.
  • the stops 14 are made in the form of a split ring with screws oh screed.
  • a disk 15 is attached to the lower end of the hollow tubular element 5 with a central hole 16 and holes 17 made on its periphery.
  • a rod 3 is passed into the central hole 16, and vertical elements of the L-shaped consoles are passed into the holes 17. Between the disk 9 attached to the L-shaped consoles and the disk 15 attached to the hollow tubular element, elastic elements are placed, in a specific example of the spring 18.
  • the holder 6 with the substrate 7 is inserted into the housing 1 of the vacuum chamber and extraction from it is carried out through an opening 19 with a cover 20. Maneuvering by a height manipulator in height is performed using a drive 21. Evaporation of materials for growing a semiconductor heterostructure on a substrate 7 occurs using sources 22.
  • the operation of the device is as follows. Using the drive 21 raise the growth arm. At a certain point, the carriage 11 abuts against the stops 13, and the rollers 12 roll down the hollow tubular element 5, while the springs 18 are compressed. The distance between the heater 4 and the horizontal elements of the L-shaped consoles 8 increases. Upon reaching the holder 6 required for insertion with the substrate 7, the values of this distance stop the rise of the growth manipulator; remove the lid 20 and insert the holder 6 with the substrate 7 into the housing 1 of the vacuum chamber manually or by mechanical means through the hole 19, bring the holder 6 to the L-shaped consoles 8 and put the holder on their horizontal elements. Close the hole 19 with the cover 20. Using the drive 21 lower the growth arm.
  • the springs 18 are straightened, and the rollers 12 roll up the hollow tubular element 5 until they reach the stops 14; carriage 1 1 stops.
  • a predetermined distance is established from the holder 6 with the substrate 7 to the sources 22.
  • the substrate 7 mounted in the holder 6 is heated by the heater 4 and the process of growing a semiconductor heterostructure is started.
  • the growth arm is lifted using the drive 21.
  • the carriage 11 abuts against the stops 13, and the rollers 12 roll down the hollow tubular element 5, and the springs 18 are compressed.
  • the cover 20 is removed and removed through the hole 19 manually or by mechanical means holder 6 with a substrate 7 from the housing 1 of the vacuum chamber. After that, close the outlet 19 of the housing 1 of the vacuum chamber with a cover 20.
  • the growth manipulator of the vacuum chamber for growing semiconductor heterostructures is manufactured in the factory using conventional equipment and known materials, which determines, according to the applicant, its compliance with the criterion of “intended applicability)) (IA).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The inventive growth manipulator of a vacuum chamber is used for growing semiconductor thin films by means of molecular-beam epitaxy. The inventive manipulator is placed in a vacuum chamber consisting of a body (1) and a lid (2). The manipulator comprises a bar (3) provided with a heater (4), which is mounted on the lower end thereof, a tubular hollow element (5) and the holder (6) of a semiconductor substrate (7). The bar is placed inside the tubular element. The semiconductor substrate holder is mounted in such a way that it can be grasped and released in a grasping mechanism provided with L-shaped cantilevers (8). The horizontal elements of said cantilevers are embodied in such a way that the substrate holder can be placed thereon. The vertical elements of the cantilevers are fastened by the top end thereof to a disc (9) having a central opening (10). The hollow tubular element passes through the disc central opening, to the circumference of which a carriage (11), provided with rollers (12) pressed against the external surface of the tubular elements, is connected. Height-adjustable arresters (13) are embodied on the internal surface of the lid, and height-displaceable arresters (14) are embodied on the external surface of the tubular element. A disc (15) which is provided with a central opening (16) and peripheral openings (17) is fixed to the lower end of the tubular element. The bar passes through the central opening (16) and the vertical elements of the cantilevers pass through the openings (17). Elastic elements (18) are disposed between the discs (9) and (15). The inventive manipulator can be used for vacuum chambers of different sizes.

Description

Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур The growth manipulator of the vacuum chamber for growing semiconductor heterostructures
Область техникиTechnical field
Полезная модель относится к технике, используемой при выращивании тонких пленок полупроводников методом молекулярно-пучковой эпитаксии.The utility model relates to the technique used in the growth of thin films of semiconductors by molecular beam epitaxy.
Предшествующий уровень техникиState of the art
Известен ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенный в вакуумной камере. Манипулятор содержит штангу с держателем подложки на нижнем конце. На штанге над держателем подложки укреплен нагреватель. Держатель может вращаться относительно продольной оси штанги, GB 21817447 А.Known growth manipulator of a vacuum chamber for growing semiconductor heterostructures located in a vacuum chamber. The manipulator comprises a rod with a substrate holder at the lower end. A heater is mounted on the rod above the substrate holder. The holder can rotate relative to the longitudinal axis of the rod, GB 21817447 A.
Недостатком этого устройства является отсутствие средств для вертикального перемещения держателя подложки, что затрудняет манипуляции с подложкой и ухудшает качество выращиваемых полупроводниковых гетероструктур. Известен также ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенный в вакуумной камере, включающей корпус и крышку. Ростовой манипулятор содержит штангу с нагревателем на нижнем конце. Штанга установлена внутри полого трубчатого элемента и сопряжена с ним посредством подшипников. Полый трубчатый элемент снабжен держателем подложки, а также приводом вертикального возвратно-поступательного перемещения, выполненным в виде сильфона. Сильфон снабжен механизмом, осуществляющим его сжатие-растяжение. Держатель подложки установлен с возможностью захвата и освобождения в захватном механизме, включающем L-образные консоли, горизонтальные элементы которых выполнены с возможностью размещения на них держателя подложки, а их вертикальные элементы прикреплены верхними концами к диску с центральным отверстием. Полый трубчатый элемент пропущен через это отверстие и снабжен механизмом, осуществляющим его вращение. По контуру центрального отверстия прикреплена каретка, снабженная роликами, поджатыми к наружной поверхности полого трубчатого элемента, EP 92117113.8 А, публикация NO 529687 A2.The disadvantage of this device is the lack of means for vertical movement of the substrate holder, which complicates the manipulation of the substrate and affects the quality of the grown semiconductor heterostructures. Also known is a growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a cover. The growth arm contains a rod with a heater at the lower end. The rod is installed inside the hollow tubular element and mates with it through bearings. The hollow tubular element is equipped with a substrate holder, as well as a vertical reciprocating drive, made in the form of a bellows. The bellows is equipped with a mechanism for compressing and stretching it. The substrate holder is installed with the possibility of capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing the substrate holder on them, and their vertical elements are attached with their upper ends to the disk with a Central hole. The hollow tubular element is passed through this hole and is equipped with a mechanism for its rotation. A carriage is attached along the contour of the central hole, provided with rollers pressed against the outer surface of the hollow tubular element, EP 92117113.8 A, publication NO 529687 A2.
Данное техническое решение принято за прототип настоящей полезной модели.This technical solution is taken as a prototype of this utility model.
Недостатком прототипа является отсутствие возможности регулировки пределов расстояния между нагревателем и подложкой; кроме того, управление захватным механизмом происходит с помощью отдельного привода, используемого только для этой цели, что усложняет устройство. Раскрытие полезной моделиThe disadvantage of the prototype is the inability to adjust the limits of the distance between the heater and the substrate; in addition, the gripping mechanism is controlled by a separate drive used only for this purpose, which complicates the device. Utility Model Disclosure
Задачей настоящей полезной модели является обеспечение возможности регулировки пределов расстояния между нагревателем и подложкой, что позволяет использовать ростовой манипулятор в вакуумных камерах различных размеров; кроме того, решается задача упрощения и удешевления конструкции устройства.The objective of this utility model is to provide the ability to adjust the distance limits between the heater and the substrate, which allows the use of a growth manipulator in vacuum chambers of various sizes; in addition, the task of simplifying and reducing the cost of the design of the device.
Согласно полезной модели эта задача решается за счёт того, что в ростовом манипуляторе вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенном в вакуумной камере, включающей корпус и крышку, содержащем штангу с нагревателем на нижнем конце, полый трубчатый элемент, держатель подложки, при этом штанга установлена внутри полого трубчатого элемента, а держатель подложки установлен с возможностью его захвата и освобождения в захватном механизме, включающем L-образные консоли, горизонтальные элементы которых выполнены с возможностью размещения на них держателя подложки, а их вертикальные элементы прикреплены верхними концами к диску с центральным отверстием, полый трубчатый элемент пропущен через центральное отверстие диска, к которому по контуру центрального отверстия прикреплена каретка, снабженная роликами, поджатыми к наружной поверхности полого трубчатого элемента, новым является то, что на внутренней поверхности крышки вакуумной камеры выполнены с возможностью упирания в них каретки регулируемые по высоте упоры, на наружной поверхности полого трубчатого элемента укреплены с возможностью упирания в них роликов переставные по высоте полого трубчатого элемента упоры, к нижнему концу полого трубчатого элемента прикреплен диск с центральным отверстием и отверстиями, выполненными по его периферии, в центральное отверстие этого диска пропущена штанга, а в отверстия, выполненные по его периферии, пропущены вертикальные элементы L-образных консолей, при этом между диском, прикрепленным к L-образным консолям, и диском, прикрепленным к полому трубчатому элементу, размещены упругие элементы.According to a utility model, this problem is solved due to the fact that in a growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a lid containing a rod with a heater at the lower end, a hollow tubular element, a substrate holder, and the rod is installed inside the hollow tubular element, and the substrate holder is installed with the possibility of its capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing a substrate holder on them, and their vertical elements are attached with their upper ends to the disk with the central hole, the hollow tubular element is passed through the central hole of the disk to which a carriage is attached along the contour of the central hole, provided with rollers pressed against the outer surface of the hollow tubular element , new is that on the inner surface of the lid of the vacuum chamber are made with the possibility of abutment in them carriage height-adjustable stops on the outer surface of the logo of the tubular member reinforced with the possibility of abutment of rollers in them, the stops that are variable in height of the hollow tubular element, a disk with a central hole and holes made on its periphery is attached to the lower end of the hollow tubular element, a rod is passed into the central hole of the disk, and holes made on its periphery , the vertical elements of the L-shaped consoles are omitted, while between the disk attached to the L-shaped consoles and the disk attached to the hollow tubular element, elastic elements are placed.
Заявителем не выявлены технические решения, тождественные заявленной полезной модели, что позволяет сделать вывод о ее соответствии критерию «нoвизнa» (N).The applicant has not identified technical solutions that are identical to the claimed utility model, which allows us to conclude that it meets the criterion of "novelty" (N).
Краткое описание чертежейBrief Description of the Drawings
Сущность полезной модели поясняется чертежами, на которых схематически изображены: на фиг.1 - продольный разрез устройства; на фиг.2 - разрез A-A на фиг.1.The essence of the utility model is illustrated by drawings, which schematically depict: in Fig.1 is a longitudinal section of the device; figure 2 is a section A-A in figure 1.
Лучший вариант осуществления полезной моделиThe best option for implementing a utility model
Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещен в вакуумной камере, которая включает корпус 1 и крышку 2. Ростовой манипулятор содержит штангу 3 с нагревателем 4, укрепленным на ее нижнем конце. Штанга 3 установлена внутри полого трубчатого элемента 5. Держатель 6 подложки 7 установлен с возможностью его захвата и освобождения в захватном механизме, включающем L-образные консоли 8. Горизонтальные элементы консолей 8 выполнены с возможностью размещения на них держателя 6 подложки 7, а их вертикальные элементы прикреплены верхними концами к диску 9 с центральным отверстием 10. Полый трубчатый элемент пропущен через отверстие 10. К диску 9 по контуру центрального отверстия 10 прикреплена каретка H5 снабженная роликами 12. В конкретном примере имеются 4 пары роликов 12. Ролики 12 поджаты к наружной поверхности полого трубчатого элемента 5. На внутренней поверхности крышки 2 вакуумной камеры размещены с возможностью упирания в них каретки 11 регулируемые по высоте упоры 13. В конкретном примере упоры 13 представляют собой винты, ввинчиваемые в крышку 2. На наружной поверхности полого трубчатого элемента 5 укреплены с возможностью упирания в них роликов 12 переставные по высоте полого трубчатого элемента 5 упоры 14. В конкретном примере упоры 14 выполнены в виде разрезного кольца с винтовой стяжкой. К нижнему концу полого трубчатого элемента 5 прикреплен диск 15 с центральным отверстием 16 и отверстиями 17, выполненными по его периферии. В центральное отверстие 16 пропущена штанга 3, в отверстия 17 пропущены вертикальные элементы L-образных консолей. Между диском 9, прикрепленным к L-образным консолям, и диском 15, прикрепленным к полому трубчатому элементу, размещены упругие элементы, в конкретном примере пружины 18. Ввод держателя 6 с подложкой 7 в корпус 1 вакуумной камеры и извлечение из него осуществляется через отверстие 19 с крышкой 20. Маневрирование ростовым манипулятором по высоте производится с помощью привода 21. Испарение материалов для выращивания на подложке 7 полупроводниковой гетероструктуры происходит с помощью источников 22.The growth manipulator of the vacuum chamber for growing semiconductor heterostructures is placed in the vacuum chamber, which includes a housing 1 and a cover 2. The growth manipulator comprises a rod 3 with a heater 4 mounted on its lower the end. The rod 3 is installed inside the hollow tubular element 5. The holder 6 of the substrate 7 is installed with the possibility of its capture and release in the gripping mechanism, including L-shaped consoles 8. The horizontal elements of the consoles 8 are made with the possibility of placing on them the holder 6 of the substrate 7, and their vertical elements attached to the upper ends of the disk 9 with a central hole 10. The hollow tubular member is passed through the hole 10. by the disk 9 to the contour of the central opening 10 is fixed carriage H 5 provided with rollers 12. In a particular Prima there are 4 pairs of rollers 12. The rollers 12 are pressed against the outer surface of the hollow tubular element 5. On the inner surface of the lid 2 of the vacuum chamber, the carriages 11 are mounted with the possibility of abutment in them, the height-adjustable stops 13. In the specific example, the stops 13 are screws screwed into cover 2. On the outer surface of the hollow tubular element 5, stops 14 are fixed with the possibility of abutment of the rollers 12 on them. The stops 14. In the specific example, the stops 14 are made in the form of a split ring with screws oh screed. A disk 15 is attached to the lower end of the hollow tubular element 5 with a central hole 16 and holes 17 made on its periphery. A rod 3 is passed into the central hole 16, and vertical elements of the L-shaped consoles are passed into the holes 17. Between the disk 9 attached to the L-shaped consoles and the disk 15 attached to the hollow tubular element, elastic elements are placed, in a specific example of the spring 18. The holder 6 with the substrate 7 is inserted into the housing 1 of the vacuum chamber and extraction from it is carried out through an opening 19 with a cover 20. Maneuvering by a height manipulator in height is performed using a drive 21. Evaporation of materials for growing a semiconductor heterostructure on a substrate 7 occurs using sources 22.
Работа устройства осуществляется следующим образом. С помощью привода 21 поднимают ростовой манипулятор. В определенный момент каретка 11 упирается в упоры 13, и ролики 12 катятся вниз по полому трубчатому элементу 5, при этом сжимаются пружины 18. Расстояние между нагревателем 4 и горизонтальными элементами L-образных консолей 8 увеличивается. При достижении необходимого для ввода держателя 6 с подложкой 7 значения этого расстояния прекращают подъем ростового манипулятора; снимают крышку 20 и через отверстие 19 вводят вручную или с помощью механических средств держатель 6 с подложкой 7 внутрь корпуса 1 вакуумной камеры, подводят держатель 6 к L-образным консолям 8 и кладут держатель на их горизонтальные элементы. Закрывают отверстие 19 крышкой 20. С помощью привода 21 опускают ростовой манипулятор. Пружины 18 распрямляются, и ролики 12 катятся вверх по полому трубчатому элементу 5 до достижения ими упоров 14; каретка 1 1 останавливается. Таким образом устанавливается заданное расстояние от держателя 6 с подложкой 7 до источников 22. Затем нагревают подложку 7, установленную в держателе 6, нагревателем 4 и начинают процесс выращивания полупроводниковой гетероструктуры. После окончания этого процесса с помощью привода 21 поднимают ростовой манипулятор. В определенный момент каретка 11 упирается в упоры 13, и ролики 12 катятся вниз по полому трубчатому элементу 5, а также сжимаются пружины 18. При достижении необходимого положения держателя 6 прекращают подъем ростового манипулятора, снимают крышку 20 и через отверстие 19 вынимают вручную или с помощью механических средств держатель 6 с подложкой 7 из корпуса 1 вакуумной камеры. После этого закрывают выходное отверстие 19 корпуса 1 вакуумной камеры крышкой 20.The operation of the device is as follows. Using the drive 21 raise the growth arm. At a certain point, the carriage 11 abuts against the stops 13, and the rollers 12 roll down the hollow tubular element 5, while the springs 18 are compressed. The distance between the heater 4 and the horizontal elements of the L-shaped consoles 8 increases. Upon reaching the holder 6 required for insertion with the substrate 7, the values of this distance stop the rise of the growth manipulator; remove the lid 20 and insert the holder 6 with the substrate 7 into the housing 1 of the vacuum chamber manually or by mechanical means through the hole 19, bring the holder 6 to the L-shaped consoles 8 and put the holder on their horizontal elements. Close the hole 19 with the cover 20. Using the drive 21 lower the growth arm. The springs 18 are straightened, and the rollers 12 roll up the hollow tubular element 5 until they reach the stops 14; carriage 1 1 stops. Thus, a predetermined distance is established from the holder 6 with the substrate 7 to the sources 22. Then, the substrate 7 mounted in the holder 6 is heated by the heater 4 and the process of growing a semiconductor heterostructure is started. After this process is completed, the growth arm is lifted using the drive 21. At a certain moment, the carriage 11 abuts against the stops 13, and the rollers 12 roll down the hollow tubular element 5, and the springs 18 are compressed. When the holder 6 reaches the required position, the height of the growth manipulator is stopped, the cover 20 is removed and removed through the hole 19 manually or by mechanical means holder 6 with a substrate 7 from the housing 1 of the vacuum chamber. After that, close the outlet 19 of the housing 1 of the vacuum chamber with a cover 20.
Благодаря регулированию высоты упоров 13 и положения упоров 14 на полом трубчатом элементе 5 обеспечивается возможность регулировки пределов расстояния между нагревателем и подложкой, что позволяет использовать ростовой манипулятор в вакуумных камерах различных размеров.By adjusting the height of the stops 13 and the position of the stops 14 on the hollow tubular element 5, it is possible to adjust the limits of the distance between the heater and the substrate, which allows the use of a growth manipulator in vacuum chambers of various sizes.
Промышленная применимостьIndustrial applicability
Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур изготавливается в заводских условиях с применением обычного оборудования и известных материалов, что обусловливает, по мнению заявителя, его соответствие критерию «пpoмышлeннaя применимость)) (IA). The growth manipulator of the vacuum chamber for growing semiconductor heterostructures is manufactured in the factory using conventional equipment and known materials, which determines, according to the applicant, its compliance with the criterion of “intended applicability)) (IA).

Claims

Формула полезной модели Utility Model Formula
Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенный в вакуумной камере, включающей корпус и крышку, содержащий штангу с нагревателем на нижнем конце, полый трубчатый элемент, держатель подложки, при этом штанга установлена внутри полого трубчатого элемента, а держатель подложки установлен с возможностью его захвата и освобождения в захватном механизме, включающем L-образные консоли, горизонтальные элементы которых выполнены с возможностью размещения на них держателя подложки, а их вертикальные элементы прикреплены верхними концами к диску с центральным отверстием, полый трубчатый элемент пропущен через центральное отверстие диска, к которому по контуру центрального отверстия прикреплена каретка, снабженная роликами, поджатыми к наружной поверхности полого трубчатого элемента, о т л и ч а ю щ и й с я т е м , что на внутренней поверхности крышки вакуумной камеры выполнены с возможностью упирания в них каретки регулируемые по высоте упоры, на наружной поверхности полого трубчатого элемента укреплены с возможностью упирания в них роликов переставные по высоте полого трубчатого элемента упоры, к нижнему концу полого трубчатого элемента прикреплен диск с центральным отверстием и отверстиями, выполненными по его периферии, в центральное отверстие пропущена штанга, в отверстия пропущены вертикальные элементы L-образных консолей, при этом между диском, прикрепленным к L-образным консолям, и диском, прикрепленным к полому трубчатому элементу, размещены упругие элементы. A growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a lid containing a rod with a heater at the lower end, a hollow tubular element, a substrate holder, and the rod is mounted inside the hollow tubular element, and the substrate holder is mounted with the possibility of capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing on them a substrate holder, and their vert the steel elements are attached with their upper ends to the disk with a central hole, the hollow tubular element is passed through the central hole of the disk, to which a carriage is attached along the contour of the central hole, equipped with rollers pressed to the outer surface of the hollow tubular element, It is noted that on the inner surface of the lid of the vacuum chamber, the carriages are adjustable with abutment support and height-adjustable stops on the outer surface of the hollow tubular element; they have rollers that are variable in height of the hollow tubular element, stops, a disk with a central hole and holes made along its periphery is attached to the lower end of the hollow tubular element, a rod is passed into the central hole, vertical elements of L-shaped consoles are passed into the holes, while between a disk attached to the L-shaped consoles, and a disk, attached to the hollow tubular element, elastic elements are placed.
PCT/RU2007/000087 2006-10-31 2007-02-22 Growth manipulator of a vacuum chamber used for growing semiconductor heterostructures WO2008054240A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA033207B1 (en) * 2017-07-18 2019-09-30 Общество С Ограниченной Ответственностью "Изовак" Vacuum chamber manipulator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307190A (en) * 1987-06-09 1988-12-14 Nissin Electric Co Ltd Molar beam source equipped with liquid level controller
SU1700113A1 (en) * 1989-10-27 1991-12-23 Специальное конструкторско-технологическое бюро специальной электроники и аналитического приборостроения СО АН СССР Unit for molecular beam epitaxy
EP0529687A2 (en) * 1988-03-30 1993-03-03 Rohm Co., Ltd. Molecular beam epitaxy apparatus
US6270574B1 (en) * 1997-11-15 2001-08-07 Sharp Kabushiki Kaisha Method of growing a buffer layer using molecular beam epitaxy

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261315A (en) 1985-09-11 1987-03-18 Sharp Corp Molecular beam epitaxy device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307190A (en) * 1987-06-09 1988-12-14 Nissin Electric Co Ltd Molar beam source equipped with liquid level controller
EP0529687A2 (en) * 1988-03-30 1993-03-03 Rohm Co., Ltd. Molecular beam epitaxy apparatus
SU1700113A1 (en) * 1989-10-27 1991-12-23 Специальное конструкторско-технологическое бюро специальной электроники и аналитического приборостроения СО АН СССР Unit for molecular beam epitaxy
US6270574B1 (en) * 1997-11-15 2001-08-07 Sharp Kabushiki Kaisha Method of growing a buffer layer using molecular beam epitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA033207B1 (en) * 2017-07-18 2019-09-30 Общество С Ограниченной Ответственностью "Изовак" Vacuum chamber manipulator

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