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WO2008051172A3 - METHOD FOR PRODUCING CUBICAL GaN FILMS ON SUBTRACTS OF A POROUS GaAs LAYER - Google Patents

METHOD FOR PRODUCING CUBICAL GaN FILMS ON SUBTRACTS OF A POROUS GaAs LAYER Download PDF

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Publication number
WO2008051172A3
WO2008051172A3 PCT/UA2007/000075 UA2007000075W WO2008051172A3 WO 2008051172 A3 WO2008051172 A3 WO 2008051172A3 UA 2007000075 W UA2007000075 W UA 2007000075W WO 2008051172 A3 WO2008051172 A3 WO 2008051172A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
cubical
films
subtracts
gan films
Prior art date
Application number
PCT/UA2007/000075
Other languages
French (fr)
Russian (ru)
Other versions
WO2008051172A2 (en
Inventor
Valeriy Vitaliovush Kidalov
Georgiy Oleksiovich Sukach
Original Assignee
Berdyansk State Ped University
Valeriy Vitaliovush Kidalov
Georgiy Oleksiovich Sukach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Berdyansk State Ped University, Valeriy Vitaliovush Kidalov, Georgiy Oleksiovich Sukach filed Critical Berdyansk State Ped University
Publication of WO2008051172A2 publication Critical patent/WO2008051172A2/en
Publication of WO2008051172A3 publication Critical patent/WO2008051172A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

The invention relates to the production of semiconductor devices, in particular to epitaxial growth methods and can be used for developing semiconductor lasers: light-emitting diodes operating in the ultra-violet spectral range. The inventive method for producing cubical GaN films on subtracts based on a porous GaAs layers consists in displacing the maximum of the operating frequency range of the films towards high (ultra-violet) frequencies. The invention makes it possible to solve one of the most important problems of modern optoelectronics consisting in producing materials, the operating frequency range of the films of which is situated in the high frequency region, by means of a low-cost method.
PCT/UA2007/000075 2006-10-27 2007-12-12 METHOD FOR PRODUCING CUBICAL GaN FILMS ON SUBTRACTS OF A POROUS GaAs LAYER WO2008051172A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
UAU200611309 2006-10-27
UAU200611309U UA21939U (en) 2006-10-27 2006-10-27 Production method for film gan on gaas porous layer

Publications (2)

Publication Number Publication Date
WO2008051172A2 WO2008051172A2 (en) 2008-05-02
WO2008051172A3 true WO2008051172A3 (en) 2008-08-07

Family

ID=38022599

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/UA2007/000075 WO2008051172A2 (en) 2006-10-27 2007-12-12 METHOD FOR PRODUCING CUBICAL GaN FILMS ON SUBTRACTS OF A POROUS GaAs LAYER

Country Status (2)

Country Link
UA (1) UA21939U (en)
WO (1) WO2008051172A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010040753A1 (en) * 2010-09-14 2012-03-15 Zf Friedrichshafen Ag Wheel lug for fastening vehicle wheel to wheel carrier of vehicle, has fuse element designed as passport coil provided to shift backup by bolt head and another fuse element designed as knurling tool provided to anti-twist plate by shaft

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834379A (en) * 1996-07-16 1998-11-10 Cornell Research Foundation, Inc. Process for synthesis of cubic GaN on GaAs using NH3 in an RF plasma process
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
US6270587B1 (en) * 1997-03-14 2001-08-07 Sumitomo Electric Industries, Ltd. Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
US5834379A (en) * 1996-07-16 1998-11-10 Cornell Research Foundation, Inc. Process for synthesis of cubic GaN on GaAs using NH3 in an RF plasma process
US6270587B1 (en) * 1997-03-14 2001-08-07 Sumitomo Electric Industries, Ltd. Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MAMUTIN V.V. ET AL.: "Poluchenie kubicheskogo GaN molekulyarno-pochkovoi epitaksiei na podlozhkakh poristogo GaAs", PISMA V ZHTF, vol. 25, no. 1, 1999, pages 3 - 9 *

Also Published As

Publication number Publication date
WO2008051172A2 (en) 2008-05-02
UA21939U (en) 2007-04-10

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