WO2005113617A1 - (メタ)アクリル酸エステル、重合体、およびレジスト組成物 - Google Patents
(メタ)アクリル酸エステル、重合体、およびレジスト組成物 Download PDFInfo
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- WO2005113617A1 WO2005113617A1 PCT/JP2005/008955 JP2005008955W WO2005113617A1 WO 2005113617 A1 WO2005113617 A1 WO 2005113617A1 JP 2005008955 W JP2005008955 W JP 2005008955W WO 2005113617 A1 WO2005113617 A1 WO 2005113617A1
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- polymer
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- 229920000642 polymer Polymers 0.000 title claims abstract description 105
- 239000000203 mixture Substances 0.000 title claims description 41
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 title claims description 24
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 34
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- GPRLTFBKWDERLU-UHFFFAOYSA-N bicyclo[2.2.2]octane Chemical group C1CC2CCC1CC2 GPRLTFBKWDERLU-UHFFFAOYSA-N 0.000 claims description 7
- SNRUBQQJIBEYMU-NJFSPNSNSA-N dodecane Chemical group CCCCCCCCCCC[14CH3] SNRUBQQJIBEYMU-NJFSPNSNSA-N 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical group C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 125000005702 oxyalkylene group Chemical group 0.000 claims description 4
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- 238000001459 lithography Methods 0.000 abstract description 8
- 238000000609 electron-beam lithography Methods 0.000 abstract description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract description 3
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 abstract 1
- 239000000178 monomer Substances 0.000 description 48
- -1 acrylate ester Chemical class 0.000 description 46
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 42
- 238000006243 chemical reaction Methods 0.000 description 34
- 239000002904 solvent Substances 0.000 description 25
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 24
- 239000002253 acid Substances 0.000 description 22
- 238000006116 polymerization reaction Methods 0.000 description 22
- 239000000243 solution Substances 0.000 description 21
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 17
- 238000007259 addition reaction Methods 0.000 description 17
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 15
- 229920001577 copolymer Polymers 0.000 description 15
- 238000004821 distillation Methods 0.000 description 14
- 150000001241 acetals Chemical class 0.000 description 13
- 239000003377 acid catalyst Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 13
- 238000003756 stirring Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 11
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 10
- 125000004849 alkoxymethyl group Chemical group 0.000 description 10
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 description 10
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- FWYUJGXEYOXHRJ-UHFFFAOYSA-N fluoromethyl prop-2-enoate Chemical compound FCOC(=O)C=C FWYUJGXEYOXHRJ-UHFFFAOYSA-N 0.000 description 8
- 239000003505 polymerization initiator Substances 0.000 description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 150000002430 hydrocarbons Chemical group 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 6
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000000746 purification Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 125000002723 alicyclic group Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000012986 chain transfer agent Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229940098779 methanesulfonic acid Drugs 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 150000004715 keto acids Chemical class 0.000 description 4
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- 238000003860 storage Methods 0.000 description 4
- 150000008027 tertiary esters Chemical group 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000002841 Lewis acid Substances 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
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- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 2
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- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
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- 238000005481 NMR spectroscopy Methods 0.000 description 2
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
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- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 2
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- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 2
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 2
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- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 2
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- 229950000688 phenothiazine Drugs 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
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- 235000020357 syrup Nutrition 0.000 description 1
- 229930006978 terpinene Natural products 0.000 description 1
- 150000003507 terpinene derivatives Chemical class 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- GEKDEMKPCKTKEC-UHFFFAOYSA-N tetradecane-1-thiol Chemical compound CCCCCCCCCCCCCCS GEKDEMKPCKTKEC-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Definitions
- the present invention relates to a polymer useful as a constituent resin material of a positive resist and a monomer useful as a raw material of a polymer for a positive resist.
- the present invention also relates to a resist composition and a method for producing a pattern using the polymer, and more particularly to a chemically amplified resist polymer suitable for fine processing using excimer laser, electron beam and X-ray.
- miniaturization has rapidly progressed due to the progress of lithography technology.
- a shorter wavelength of irradiation light is used.
- ultraviolet light DUV typically represented by conventional g-line (wavelength: 438 nm) and i-line (wavelength: 365 nm)
- Irradiation light is changing to Deep Ultra Violet).
- Lithography technology Long: 157nm
- EUV lithography technology which are slightly different types of lithography technology, have been studied energetically.
- a "chemically amplified resist" containing a photoacid generator As a high-resolution resist for such short-wavelength irradiation light or electron beam, a "chemically amplified resist" containing a photoacid generator has been proposed. At present, improvement and development of the chemically amplified resist have been proposed. Is being vigorously pursued. In a chemically amplified positive resist, the dissolution rate of a resist polymer in an alkaline developer must be increased by the action of an acid, and has a structure in which a hydrophilic group is protected by an acid-eliminable protecting group. Polymers are widely used.
- Patent Document 1 discloses a monomer in which (meth) acrylic acid is protected by an acid-eliminable protecting group.
- a polymer having a constitutional unit is mentioned.
- Patent Document 2 discloses a polymer having a structural unit represented by the following formula (5).
- R represents a hydrogen atom, a methyl group, a linear or branched hydroxyalkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.
- each R 3 independently represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, or a linear or branched alkyl group having 1 to 4 carbon atoms.
- at least one of R 3 is the alicyclic hydrocarbon group or a derivative thereof, or any two R 3 are bonded to each other to form a carbon atom together with the carbon atom to which each is bonded.
- R 3 is a linear or branched alkyl group having 1 to 4 carbon atoms or a monovalent having 4 to 20 carbon atoms; Represents an alicyclic hydrocarbon group or a derivative thereof, and U represents a divalent bridged hydrocarbon group having 5 to 12 carbon atoms.
- a (meth) acrylic acid ester described in Patent Document 2 for forming an acid-eliminable structural unit represented by the general formula (5) is used in the production thereof.
- a (meth) acrylic acid having a bridged hydrocarbon group having a carboxyl group bonded thereto (structure U in general formula (5)) and a tertiary alcohol (C (R) OH) can be subjected to an esterification reaction.
- Patent Document 1 JP 2003-122007
- Patent Document 2 Japanese Patent Application Laid-Open No. 2003-330192
- an acid-labile group can be introduced by a simple method with a small reaction constant.
- Another object of the present invention is to provide a polymer using the (meth) acrylic acid ester and a resist composition using the polymer.
- the inventors of the present invention have conducted intensive studies in view of the above problem, and as a result, it has been found that a (meth) acrylate ester having a structure in which an acetal-containing structure is bonded to a specific ring structure can be easily removed by a simple method.
- the inventors have found that a group can be introduced and that the polymer is useful as a constituent resin material of a positive resist, and the present invention has been accomplished.
- a first gist of the present invention is a polymer containing a structural unit represented by the following formula (1).
- R represents a hydrogen atom or a methyl group.
- R ⁇ R 2 each independently represents a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, or RR 2 is taken together.
- a 1 represents a single bond, alkylene, oxyalkylene, C (0) 0— or one CH CH OC (O) —, and
- a 2 represents a single bond, alkylene, oxyalkylene, CO, one
- a second aspect of the present invention is a polymer in which the above formula (1) is a structural unit represented by the following formula (2).
- R represents a hydrogen atom or a methyl group.
- R 2 represents an alkyl group having 1 to 20 carbon atoms.
- a third aspect of the present invention is a (meth) acrylic acid ester represented by the following formula (3).
- a fourth aspect of the present invention is a (meth) acrylic acid ester in which the above formula (3) is represented by the following formula (4).
- R represents a hydrogen atom or a methyl group.
- R 2 represents an alkyl group having 1 to 20 carbon atoms.
- N is 0 or 1.
- a fifth aspect of the present invention is a resist composition containing the polymer.
- a sixth gist of the present invention includes a step of applying the resist composition on a substrate to be processed, a step of exposing to light having a wavelength of 250 nm or less, and a step of forming a pattern by developing using a developer. And a pattern manufacturing method including:
- a polymer using an acrylate ester is useful as a positive resist.
- FIG. 1 is a view showing the measurement results of 1 H-NMR analysis of a methacrylic acid ester represented by (A-1) obtained in Example 1.
- FIG. 2 is a view showing a measurement result of 1 H-NMR analysis of a methacrylate represented by (A-2) obtained in Example 3.
- FIG. 3 shows the results of mass spectrometry of the methacrylate represented by (A-2) obtained in Example 3.
- FIG. 4 is a view showing a measurement result of 1 H-NMR analysis of a methacrylate represented by (A-3) obtained in Example 5.
- FIG. 5 is a diagram showing the results of mass spectrometry measurement of the methacrylate represented by (A-3) obtained in Example 5.
- (meth) acrylic acid represents methacrylic acid or acrylic acid
- the polymer of the present invention contains the structural unit represented by the formula (1), and is particularly useful as a raw material for a resist composition. Since the polymer of the present invention has excellent transparency to light having a wavelength of 250 nm or less, the polymer for KrF resist, the polymer for ArF resist, and the F resist
- It can be used as a polymer for a strike, and particularly suitable as a polymer for an ArF resist.
- the polymer of the present invention is a cyclohexane ring, a norbornane ring, a bicyclo [2.2.2] octane ring, which may be substituted, represented by Z in the above formula (1). Or a tetracyclo [4. 4. 0. I 2 ' 5 ] dodecane ring.
- the substituents are not particularly limited, but include a hydroxy group, a carboxyl group, a C1-C6 acyl group, a C1-C6 alkoxy group, and a carboxy group esterified with a C1-C6 alcohol.
- a cyclic saturated hydrocarbon group is excellent in etching resistance when a polymer is used as a resist.
- a cyclic saturated hydrocarbon group since a raw material is easily available, a bicyclo [2.2.2] octane ring and a tetracyclo [4. 4.0. I 2 ' 5 ] dodecane ring is preferred.
- the polymer of the present invention is characterized in that the cyclic saturated hydrocarbon group has a single bond, alkylene, Via cyanoreylene, one O—, one CO—, one C (0) 0—, or one CH CH OC (O) —
- Acetals decompose in the presence of an acid catalyst to form carboxyl or hydroxy groups.
- it can be used for resist compositions for metal etching, photo application, plate making, hologram, color filter, retardation film, etc. .
- it can be suitably used for a positive-acting amplification type resist using a photoacid generator.
- the polymer of the present invention when used as a raw resin for a positive resist composition, it has excellent line edge roughness.
- the structural unit represented by the formula (1) is a structural unit represented by the following formula (2).
- R represents a hydrogen atom or a methyl group.
- R 2 represents an alkyl group having 1 to 20 carbon atoms.
- the polymer containing the structural unit represented by the above formula (2) is particularly preferable because it has a high thermal stability of the acetal structure and tends to have excellent storage stability. It is particularly preferable because of excellent line edge roughness. This is thought to be due to the carboxy group protected by the alkoxymethyl group. Alkoxymethyl groups are smaller in size under acidic conditions than those of other acid-labile groups such as tertiary ester groups and alkoxyethyl groups. It is presumed to be very small. Also, the alkoxymethyl group is considered to have lower elimination energy than acid-labile groups such as tertiary ester groups used in conventional chemically amplified positive resists. It is presumed to suppress life.
- the polymer of the present invention can be produced by polymerizing a (meth) acrylate monomer represented by the following formula (3).
- monomers represented by the above formula (3) include monomers represented by the following formulas (3-1) to (3-91).
- R and Z have the same meanings as in the formula (1)
- the monomers represented by (3-38) to (3-42) are preferred, and the formulas (3-10), (3-11), (3-24), (3-25), In (3-38) and the formula (3-39), those in which ⁇ is a bicyclo [2.2.2] octane ring are particularly preferable.
- Equation (3-1), Equation (3-43), Equation (3-57), Equation (3-64), Equation (3-71)-Equation (3-71) — 77) is preferable, and a monomer represented by the following formula (4) is particularly preferable.
- R represents a hydrogen atom or a methyl group.
- R 2 represents an alkyl group having 1 to 20 carbon atoms.
- N is 0 or 1.
- the (meth) acrylic acid ester represented by the above formula (4) tends to have excellent storage stability due to high thermal stability of the acetal structure when used as a raw material for a polymer for a positive resist. It is in. It is particularly preferable because of excellent line edge roughness. This is thought to be due to the carboxy group protected by the alkoxymethyl group. Alkoxymethyl groups are small in size compared to other acid leaving groups such as tertiary ester groups, alkoxyethyl groups, etc. It is presumed to be very small. Alkoxymethyl groups, such as tertiary ester groups, have also been used in conventional chemically amplified positive resists! The energy of elimination is considered to be lower than that of acid-labile groups. It is assumed that the occurrence of pulling is suppressed.
- R represents a hydrogen atom or a methyl group.
- R 1 represents an alkyl group having 1 to 20 carbon atoms.
- (meth) acrylate represented by the formulas (1A) and (1B) include the following formulas (4A-1) to (4A-22) and (4B-1) to (4B-22).
- R represents a hydrogen atom or a methyl group.
- the (meth) acrylates represented by the above formulas (4A-1) to (4A-22) and (4B-1) to (4B-22) are represented by the following formulas (4A-a) to It may have two or more positional isomers, stereoisomers, and optical isomers represented by (4A-h), (4B-a) to (4B-X).
- the (meth) acrylic acid esters represented by the above formulas (4A) and (4B) may be either of these isomers alone or two or more isomers. It's a mixture and a little.
- the monomer of the present invention can be produced, for example, by the following method.
- the following steps (I) to (IV) are steps for producing the monomers represented by the formulas (3-22), (3-24), (3-5), and (3-46), respectively.
- steps (I) to (IV) are steps for producing the monomers represented by the formulas (3-22), (3-24), (3-5), and (3-46), respectively.
- other similar monomers can be produced by the same process.
- the starting materials, norbornenecarboxylic acid and norbornene alcohol can be synthesized by known methods, or commercially available products may be used.
- the addition reaction of acrylic acid or methacrylic acid to norbornene carboxylic acid and norbornene alcohol should be carried out using an acid catalyst without solvent or in a solvent such as toluene, using an excess of acrylic acid or methacrylic acid. Is preferred,.
- the acid catalyst used in the addition reaction is not particularly limited, and examples thereof include hydrochloric acid, sulfuric acid, nitric acid, p-toluenesulfonic acid, methanesulfonic acid, acetic acid, trifluoroacetic acid, and trifluoromethanesulfonic acid. Above all, from the viewpoint of the reaction rate, trifluoromethanesulfonic acid is more preferable, with sulfuric acid, p-toluenesulfonic acid and trifluoromethanesulfonic acid being preferred.
- the addition reaction of the carboxylic acid or alcohol to the butyl ether is preferably carried out in a solvent such as toluene or tetrahydrofuran using an acid catalyst.
- step (III) commercially available terpinene as a raw material can be used.
- the cycloaddition reaction between terbinene and acrylic acid is easily carried out by a known method.
- a catalyst such as a Lewis acid is used as necessary, and it is preferable to carry out the reaction without a solvent or in a solvent such as methanol.
- the subsequent addition reaction of acrylic acid or methacrylic acid and addition reaction to vinyl ether can be carried out in the same manner as in steps (1) and (II).
- step (IV) commercially available starting materials such as hydroxyethyl methacrylate, hexahydrophthalic anhydride and 2,3-dihydropyran can be used.
- the ring-opening addition reaction of hydroxyethyl methacrylate to hexahydrophthalic anhydride proceeds easily by a known method.However, if necessary, a catalyst such as a Lewis acid can be used, and no solvent or methanol or the like can be used. It is preferable to carry out in a solvent.
- a catalyst such as a Lewis acid can be used, and no solvent or methanol or the like can be used. It is preferable to carry out in a solvent.
- the subsequent addition reaction of carboxylic acid to 2,3-dihydropyran can be carried out in the same manner as in steps (1) and (II).
- the (meth) acrylic acid esters represented by the above formulas (4A) and (4B) can be produced, for example, by the following steps (V) and (VI).
- Step (V), Te Contact! /, In (VI), is a starting material norbornene carboxylic acid and tetracyclo [4. 4. 0. I 2 ' 5] Dodesenkarubon acid is synthesized by a known method Or a commercially available product may be used.
- the first step is about Tsukeka ⁇ norbornene carboxylic acid or tetracyclo [4. 4. 0. I 2 '5 ] to dodecene force carboxylic acid (meth) acrylic acid ester.
- an excess of (meth) acrylic acid relative to norbornenecarboxylic acid or tetracyclo [4.4.0.I 2 ' 5 ] dodecenecarboxylic acid is required from the viewpoint of the reaction rate. U, which is preferred to use.
- Dodesenkarubon acid 1 mole is preferable instrument 3 moles or more is at least 2 mol More preferably, it is. Further, it is preferably 15 mol or less, more preferably 8 mol or less. If the amount is less than this, the reaction may not proceed sufficiently. If the amount is too large, it becomes difficult to remove excess (meth) acrylic acid after the reaction.
- the addition reaction of (meth) acrylic acid is generally performed in the presence of an acid catalyst.
- the acid catalyst include Lewis acids such as boron oxyfluoride, mineral acids such as sulfuric acid, hydrochloric acid, nitric acid and phosphoric acid, p-toluenesulfonic acid, benzenesulfonic acid, dodecylbenzenesulfonic acid, methanesulfonic acid, camphorsulfonic acid, and the like.
- Organic acids such as trifluoromethanesulfonic acid, etc .; heteropolyacids such as phosphotungstic acid and keitungstic acid; and strongly acidic ion-exchange resins; and sulfuric acid, p-toluenesulfonic acid, camphor, etc.
- Sulfonic acid, methanesulfonic acid, and trifluoromethanesulfonic acid are preferred, and methanesulfonic acid is particularly preferred because of easy handling.
- the amount of the acid catalyst used is preferably 0.03 mol or more, more preferably 0.055 mol or more, more preferably 0.3 mol or less, and preferably 0.25 mol or less, based on 1 mol of norbornene carboxylic acid.
- the temperature at which the acid addition reaction is performed is preferably 50 ° C or higher, more preferably 70 ° C or higher, further preferably 180 ° C or lower, and more preferably 150 ° C or lower. preferable. At lower temperatures, the reaction may not proceed sufficiently at lower temperatures, and at lower temperatures, the by-products may increase.
- the solvent used in the acid addition reaction is not particularly limited, but may be tetrahydrofuran, tet Ether solvents such as lahydropyran, dimethyl ether, dimethyl ether, diisopropyl ether, methyl tert-butyl ether, aliphatic hydrocarbon solvents such as pentane, hexane, heptane, heptane, cyclohexane, benzene, toluene, xylene, etc.
- Aromatic hydrocarbon solvents are exemplified. These solvents are preferably dehydrated in advance by a conventional method because a high reaction yield can be obtained.
- the acid addition reaction is preferably performed without a solvent in that the caro reaction with acid can be performed without a solvent and the yield is good.
- the time for the acid addition reaction varies depending on the batch size, the acid catalyst, and the reaction conditions, but is preferably 1 hour or more, and more preferably 12 hours or less. More preferably, it is 2 hours or more and 8 hours or less. If it is shorter than this, the reaction may not proceed sufficiently, and if it is longer than this, the by-products may increase.
- polymerization inhibitor is not particularly limited as long as it inhibits polymerization.1S hydroquinone, hydroquinone monomethyl ether, 2,4 dimethyl-6-t-butylphenol, ⁇ benzoquinone, 2,5-diphenyl-benzoquinone, phenothiazine, N -Torosodiphenamine, copper salts, copper metal, 2,2,6,6-tetramethylpiperidine 1-oxyl, and the like. Further, performing the reaction while blowing air or oxygen is also effective for suppressing the polymerization.
- the reaction solution is washed with water or an aqueous alkaline solution such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium hydrogencarbonate, or the like to wash the reaction solution with water or neutralized water to remove the acid catalyst.
- aqueous alkaline solution such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium hydrogencarbonate, or the like
- Removal method adding alkali powder such as sodium carbonate, sodium hydrogen carbonate, magnesium oxide, etc., stirring and filtering the neutralized salt to remove the acid catalyst, triethylamine, triethanolamine, morpholine, etc.
- the acid catalyst can be removed by, for example, a method of neutralizing the acid catalyst with the above amine. Among them, a method of washing with an aqueous alkali solution and extracting with an organic solvent is preferable because the acid catalyst can be effectively removed.
- organic solvent used for the extraction examples include toluene, benzene, hexane, cyclohexane, ethyl acetate, dimethyl ether, diisopropyl ether, and the like.
- Toluene, ethyl acetate and getyl ether are preferred
- Toluene is particularly preferred because the purity of the target compound can be increased.
- the obtained (meth) acrylic acid adduct may be purified by a known method such as distillation or column chromatography, or may be directly used in the next step without purification. Since the (meth) acrylic acid additive may be polymerized by heating, it is preferable that purification is not performed because the total yield is high.
- the next step is a step of alkoxymethyl etherifying the carboxy group of the (meth) acrylic acid adduct.
- Alkoxy methyl ether is carried out by reacting a (meth) acrylic acid adduct in the presence of a base with a halogenated alkyl ether or dialkoxymethane. Further, the (meth) acrylic acid adduct may be reacted with formaldehyde or alcohol. From the viewpoint of the reaction rate, it is particularly preferable to react with halogen alkyl ether, and from the viewpoint that the amount of by-products is small, a cycloalkyl ether is particularly preferable.
- the base is not particularly limited, triethylamine, diisopropylethylamine, pyridine, dimethylaminopyridine, sodium hydride, lithium hydride, potassium t-butoxide, sodium methoxide, sodium ethoxide and the like are used.
- the reaction solvent is not particularly limited, but it is preferable to use a polar solvent such as methanol, ethanol, tetrahydrofuran, formamide, acetoamide, dimethylformamide, dimethylacetamide, or dimethylsulfoxide in view of the reaction speed.
- Formamide is particularly preferred.
- the temperature at which the alkoxymethyl etherification is carried out is preferably at least 50 ° C, more preferably at least 0 ° C, preferably at most 100 ° C, preferably at most 50 ° C. More preferred. If the temperature is lower than this V, the reaction may not proceed sufficiently !, and if it is lower than this, the by-products may increase.
- the obtained (meth) acrylic acid ester of the present invention can be used as a raw material for a polymer without purification, but it is necessary to purify the polymer in order to suppress contamination of the polymer with impurities. I like it. Purification can be performed by a known method such as column chromatography, distillation, or recrystallization, but it is preferable to perform distillation purification because of easy handling. Since polymerization may occur during distillation, it is preferable to add a polymerization inhibitor.
- the polymerization inhibitor is not particularly limited as long as it inhibits polymerization, but it may be hydroquinone, hydroquinone monomethyl ether, 2,4 dimethyl-6-tbutylphenol, p-benzoquinone, 5-diphenyl-benzoquinone, phenothiazine, torosodiphenamine, copper salts, metallic copper, 2,2,6,6-tetramethylpiperidine 1-oxyl and the like. Further, performing distillation while blowing air or oxygen is also effective for suppressing polymerization.
- the (meth) acrylic ester of the present invention may decompose when heated during distillation. This is presumed to be due to the fact that the acidic component used in the reaction remained and the acid-labile group was eliminated V.
- a base may be added for distillation.
- the base is not particularly limited, but sodium hydroxide and potassium hydroxide are preferable because of easy handling.
- the (meth) acrylic acid ester of the present invention can also be produced by a method such as the following steps (VII) and (VIII).
- the first step is the norbornene carboxylic acid or tetracyclo [4. 4. 0. I 2 '5 ] dodecene force carboxylic acid alkoxymethyl etherification step.
- Alkoxymethyl etherification is based on norbornene carboxylic acid, in the presence of a base, halogenated alkyl ether or It is performed by reacting with dialkoxymethane. Further, the (meth) acrylic acid adduct may be reacted with formaldehyde or alcohol.
- the second step is a hydroxylation step for the alkoxymethyletherilide. Reacting the alkoxymethyletheride with formic acid, a BH-tetrahydrofuran complex,
- an alcohol form is obtained by hydrolysis using a base such as sodium carbonate. Further, the obtained alcohol form and (meth) acrylic acid chloride are dechlorinated in the presence of a base such as sodium hydroxide. By performing the hydrogen reaction, the (meth) acrylate ester of the present invention can be obtained.
- the products of the above steps (I) to (X) may include several positional isomers, geometric isomers and optical isomers.
- As raw materials for the structural unit (1) of the polymer of the present invention two or more Either a mixture of isomers may be used, or purified and / or some of the isomers may be used alone. Therefore, the mixture of isomers can be used for the polymerization reaction as it is. Further, even if it contains a reaction intermediate, it can be used for the polymerization reaction as it is.
- the product of the above reaction may be purified by simple distillation, thin film distillation, recrystallization, column chromatography, or the like, if necessary.
- the polymer of the present invention may be a homopolymer or a copolymer.
- the monomer of the present invention represented by the above formula (3) and the following formulas (6-1) to (6-80) It is preferable to copolymerize with a compound represented by the above formula in view of excellent resist performance such as sensitivity, resolution and etching resistance. Any monomer can be used as the copolymer component according to the purpose, and the copolymerization ratio may be appropriately determined according to the purpose.
- R represents a hydrogen atom or a methyl group.
- the ratio of the structural unit represented by the above formula (1) in the polymer may be 2 because of excellent sensitivity and resolution and low line edge roughness.
- the group represented by the monomer represented by the formula (3) and the monomer represented by the formulas (6-19) and (6-74) It is preferred to copolymerize with at least one selected monomer.
- Alicyclic bone having such a hydroxy group or a cyano group A positive resist using a polymer containing a case has a good pattern shape.
- the group represented by the monomer represented by the formula (3) and the monomer represented by the formulas (6-22) and (6-64) are selected. It is preferred to copolymerize with one or more monomers.
- 25 to 70 mol% of the structural unit represented by the formula (1) is defined as the formula (6-23), the formula (6-24), the formula (6-28), or the formula (6 6-29), Formula (6-36), Formula (6-47), Formula (6-59), and Formula (6-63)
- the structural unit derived from the body is 25 to 70 mol%, and the structural unit derived from one or more monomers whose group force is also selected from the formulas (6-19) and (6-74) Is particularly preferred from the viewpoint of excellent sensitivity, resolution and line edge roughness.
- each structural unit can take an arbitrary sequence. Therefore, when the polymer of the present invention is a copolymer, it may be a random copolymer, an alternating copolymer, or a block copolymer.
- the monomer represented by the formula (3) can be copolymerized with other monomers. Specifically, methyl (meth) acrylate, ethyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, (meth) acrylic acid Butyl, isobutyl (meth) acrylate, t-butyl (meth) acrylate, methoxymethyl (meth) acrylate, n-propoxyshetyl (meth) acrylate, i-propoxyshetyl (meth) acrylate, (meth) ) N-butoxysyl acrylate, i-butoxysyl (meth) acrylate, t-butoxystyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate
- Runnene tetrafluoroethylene, acrylamide, N-methylacrylamide, N, N-dimethylacrylamide, butyl chloride, ethylene, butyl fluoride, bi-lidene fluoride, tetrafluoroethylene, butylpyrrolidone and the like.
- the weight average molecular weight of the polymer of the present invention is not particularly limited, but is preferably 1,000 or more, and more preferably 1,000,000 or less.
- the polymer preferably has a mass average molecular weight of 1,000 or more from the viewpoints of etching resistance and resist shape. More preferably, it is particularly preferably 5,000 or more.
- the weight average molecular weight of the polymer of the present invention is preferably 100,000 or less, more preferably 50,000 or less, from the viewpoint of solubility in a resist solution and resolution, and more preferably 50,000 or less. Especially preferred is 000 or less.
- the polymer of the present invention can be produced by polymerizing the monomer represented by the formula (3).
- the polymerization method include radical polymerization, anion polymerization, and cationic polymerization.
- a polymerization method called precision polymerization represented by living polymerization may be used.
- a production process for obtaining a polymer includes a bulk polymerization process, a suspension polymerization process, an emulsion polymerization process, a gas phase polymerization process, a solution polymerization process, and the like. These production processes may be appropriately determined according to the properties of the target polymer.
- Example As mentioned above, the above-described process is required because it is necessary to remove the monomers remaining after the polymerization reaction in order to prevent the light transmittance from lowering, and it is necessary to make the molecular weight of the copolymer relatively low. Among them, a solution polymerization process is often employed.
- a so-called drop polymerization method in which a monomer solution in which is dissolved in an organic solvent is dropped into an organic solvent maintained at a constant temperature, is suitably used.
- the polymer of the present invention is usually obtained by polymerizing a monomer solution containing a monomer represented by the formula (3) in the presence of a polymerization initiator.
- a radical form of the polymerization initiator is generated in the reaction solution, and chain polymerization of the monomer proceeds from the radical form as a starting point.
- polymerization initiator used in the production of the polymer of the present invention one that efficiently generates radicals by heat is preferable.
- polymerization initiators include, for example, azoi conjugates such as 2,2'-azobisisobutymouth-tolyl and dimethyl-2,2, -azobisisobutyrate; 2,5 dimethyl-2,5bis ( organic peroxides such as tert-butylperoxy) hexane and the like.
- a chain transfer agent may be used.
- a chain transfer agent By using a chain transfer agent, a polymer having a low molecular weight and a small molecular weight distribution can be produced.
- Suitable chain transfer agents include, for example, 1-butanethiol, 2-butanethiol, 1-octanethiol (n- Octyl mercaptan), 1-decanethiol, 1-tetradecanethiol, cyclohexanethiol, 2-methyl-1 propanethiol, 2-mercaptoethanol, mercaptoacetic acid, 1-thioglycerol and the like.
- the amount of the polymerization initiator to be used is not particularly limited, but is usually preferably 1 to 20 mol% based on the total amount of the monomers used.
- the amount of the chain transfer agent is not particularly limited, it is usually preferably 1 to 20 mol% based on the total amount of the monomers used!
- the polymerization temperature is not particularly limited, but is usually preferably 50 ° C or higher, more preferably 150 ° C or lower.
- Examples of the organic solvent used in the solution polymerization process include a solvent that can dissolve even the misalignment of the chain transfer agent when the monomer used, the polymerization initiator and the obtained polymer, and the chain transfer agent are used together. preferable.
- organic solvent examples include 1,4-dioxane, isopropyl alcohol, acetone, tetrahydrofuran (hereinafter, also referred to as “THF”), methyl isobutyl ketone, ⁇ -butyrolataton, propylene glycol monomethyl ether acetate (hereinafter, “ PGMEA "), ethyl lactate and the like.
- the polymer solution produced by a method such as solution polymerization may be used, if necessary, with 1,4-dioxane, acetone, THF, methyl isobutyl ketone, ⁇ -butyrolataton, PGMEA, ethyl ethyl lactate, or the like.
- the polymer may be purified by dropping it into a large amount of a poor solvent such as methanol or water to precipitate a polymer. This step is generally called reprecipitation, and is very effective for removing unreacted monomers and polymerization initiator remaining in the polymerization solution.
- the precipitate is separated by filtration and sufficiently dried to obtain the polymer of the present invention. Also, after filtration, the wet powder can be used without drying.
- the resist composition of the present invention is obtained by dissolving the polymer of the present invention as described above in a solvent.
- the chemically amplified resist composition of the present invention is obtained by dissolving the above-described polymer of the present invention and a photoacid generator in a solvent. Chemically amplified positive resist is excellent in sensitivity.
- the polymer of the present invention may be used alone or in combination of two or more. Further, the polymer of the present invention may be used as a blend polymer in which the polymer is mixed with another polymer.
- the polymer solution obtained by solution polymerization or the like can be used for the resist composition without separating the polymer, or the polymer solution can be diluted with an appropriate solvent. Can be used in a resist composition. Further, the resist composition of the present invention may contain a polymer other than the polymer of the present invention.
- the solvent in which the polymer of the present invention is dissolved is arbitrarily selected according to the use conditions and the like.
- the solvent examples include linear or branched chain ketones such as methyl ethyl ketone, methyl isobutyl ketone and 2-pentanone; cyclic ketones such as cyclopentanone and cyclohexanone Propylene glycol monoalkyl acetates such as propylene glycol monomethyl ether acetate; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether; ethylene glycol monomethyl ether Ethylene glycol monoalkyl ethers such as ethylene ether; diethylene glycol alkyl ethers such as diethylene glycol dimethyl ether; esters such as ethyl acetate and ethyl lactate; alcohols such as n -propyl alcohol, isopropyl alcohol, n -butyl alcohol and tert-butyl alcohol. 1,4-
- the content of the solvent is usually at least 200 parts by mass, more preferably at least 300 parts by mass, per 100 parts by mass of the resist polymer.
- the content of the solvent is usually 5,000 parts by mass or less, more preferably 2,000 parts by mass or less, based on 100 parts by mass of the resist polymer.
- the polymer of the present invention When the polymer of the present invention is used for a chemically amplified positive resist, it is necessary to use a photoacid generator.
- the photoacid generator contained in the chemically amplified resist composition of the present invention can be arbitrarily selected from those usable as an acid generator of the chemically amplified resist composition.
- One photoacid generator may be used, or two or more photoacid generators may be used in combination.
- Examples of such a photoacid generator include a rubber salt compound, a sulfonimide compound, a sulfone compound, a sulfonate compound, a quinonediazide compound, a diazomethane compound, and the like.
- a rubber salt compound e.g., a rubber salt compound, a sulfonimide compound, a sulfone compound, a sulfonate compound, a quinonediazide compound, a diazomethane compound, and the like.
- oxosalts such as sulfosulfum salts, eodomium salts, phosphodium salts, diazodium salts and pyridinium salts.
- Examples include: triphenylsulfo-dimethyltriflate, triphenylsulfo-dimethylhexafluoroantimonate, triphenylsulfo-dimethylnaphthalenesulfonate, (hydroxyphenyl-benzoyl) benzinolemethinoresnorethole-dimethylalumines Norefonate, diphen-norodeonium triflate, diphenyl-nordenium pyrene sulphonate, diphenylenorodenium dimethyl decylbenzenesulfonate, And p-methylphenyldiphenylsulfo-dimethylnonafluorobutanesulfonate, tri (tert-butylphenyl) sulfo-dimethyltrifluoromethanesulfonate and the like.
- the content of the photoacid generator is appropriately determined depending on the type of the selected photoacid generator, but is usually 0.1 part by mass or more based on 100 parts by mass of the polymer for a positive resist. It is more preferable that the amount be 0.5 part by mass or more.
- the content of the photoacid generator is usually 20 parts by mass or less, more preferably 10 parts by mass or less, based on 100 parts by mass of the polymer for a positive resist. By setting the content of the photoacid generator in this range, the stability of the resist composition is improved, and the occurrence of unevenness in application of the composition and scum during development are sufficiently reduced.
- the chemically amplified resist composition of the present invention may further contain a nitrogen-containing compound.
- a nitrogen-containing compound By containing a nitrogen-containing compound, the resist pattern shape, the stability with time of storage, and the like are further improved.
- the cross-sectional shape of the resist pattern becomes closer to a rectangle, and the resist film is exposed, beta-exposed (PEB) after exposure, and left for several hours before the next development process.
- PEB beta-exposed
- the nitrogen-containing compound is preferably a polyamide capable of using any known one, and among them, a secondary lower aliphatic amine and a tertiary lower aliphatic amine are more preferred.
- lower aliphatic amine refers to an alkyl or alkyl alcohol amine having 5 or less carbon atoms.
- Examples of the secondary lower aliphatic amine and the tertiary lower aliphatic amine include, for example, trimethylamine, getylamine, triethylamine, di- n -propylamine, tree n-propylamine, tripentylamine, diethanolamine, and triethanolamine. And the like.
- tertiary alkanolamines such as triethanolamine are more preferable.
- the nitrogen-containing compound one type may be used, or two or more types may be used in combination.
- the content of the nitrogen-containing compound is appropriately determined depending on the type of the selected nitrogen-containing compound and the like, but is usually preferably 0.01 part by mass or more based on 100 parts by mass of the polymer for a positive resist. Nitrogen By setting the content of the elemental compound in this range, the shape of the resist pattern can be made more rectangular.
- the content of the nitrogen-containing compound is usually preferably 2 parts by mass or less based on 100 parts by mass of the polymer for a positive resist. By setting the content of the nitrogen-containing compound in this range, deterioration in sensitivity can be reduced.
- the chemically amplified resist composition of the present invention may also contain an organic carboxylic acid, an oxo acid of phosphorus, or a derivative thereof. By containing these compounds, it is possible to prevent the sensitivity from being deteriorated due to the compounding of the nitrogen-containing compound, and to further improve the resist pattern shape, the stability over time, and the like.
- organic carboxylic acid for example, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are preferable.
- Examples of phosphorus oxo acids or derivatives thereof include derivatives such as phosphoric acid such as phosphoric acid, di-n-butyl phosphate ester and diphenyl phosphate ester and derivatives thereof; phosphonic acid, dimethyl phosphonate Derivatives such as esters, phosphonic acid di-n-butyl ester, phenolenophosphonic acid, diphenyl enoestenolate phosphonate, dibenzinoester phosphonate, and phosphonic acids and their esters; phosphinic acid, phenylphosphinic acid, etc. Derivatives such as phosphinic acid and esters thereof, and the like, among which phosphonic acid is preferable.
- These compounds may be used alone or in combination of two or more.
- the content of these compounds is appropriately determined depending on the type of the selected compound, and is usually 100 parts by mass of the resist polymer. On the other hand, it is preferably 0.01 part by mass or more. By setting the content of these compounds in this range, the shape of the resist pattern can be made more rectangular. Further, the content of these compounds (organic carboxylic acid, oxo acid of phosphorus, or a derivative thereof) is usually preferably 5 parts by mass or less based on 100 parts by mass of the resist polymer. By setting the content of these compounds in this range, the film loss of the resist pattern can be reduced by / J.
- the nitrogen-containing compound, the organic carboxylic acid, the oxo acid of phosphorus and the derivative thereof can be used.
- One or more selected ones can be contained in the chemically amplified resist composition of the present invention, or only one of them can be contained.
- the resist composition of the present invention may further contain, if necessary, a surfactant, a quencher other than the nitrogen-containing compound, a sensitizer, an antihalation agent, a storage stabilizer, a defoaming agent, and the like.
- a surfactant e.g., sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium bicarbonate, sodium
- the polymer for a positive resist of the present invention may be used as a resist composition for metal etching, photo application, plate making, hologram, color filter, retardation film and the like.
- the resist composition of the present invention is applied to the surface of a substrate to be processed such as a silicon wafer on which a pattern is to be formed, by spin coating or the like.
- the substrate to which the resist composition has been applied is dried by a baking process (pre-beta) or the like to form a resist film on the substrate.
- the resist film thus obtained is irradiated with light having a wavelength of 250 nm or less via a photomask (exposure).
- the light used for exposure is preferably a KrF excimer laser, an ArF excimer laser, or an F excimer laser, particularly an ArF excimer laser.
- Exposure with an electron beam is also preferred.
- the substrate After exposure, heat treatment is appropriately performed (beta after exposure, PEB), the substrate is immersed in an alkaline developer, and the exposed portion is dissolved and removed in the developer (development).
- the alkali developer a known developer may be used. After the development, the substrate is appropriately rinsed with pure water or the like. In this way, a resist pattern is formed on the substrate to be processed.
- the substrate on which a resist pattern is formed is appropriately heat-treated (post-beta) to strengthen the resist and selectively etch portions without the resist. After etching, the resist is usually removed using a stripper.
- the thermal stability of the polymer was determined by heating and stirring the polymer 3.Og in a test tube at 100 ° C for 4 hours using a personal organic synthesis device Chem iStationPPS-2510 manufactured by Tokyo Rikakikai Co., Ltd. It was determined by 1 H-NMR measurement after stirring. This measurement was performed using a JN GX-270 type FT-NMR (trade name) manufactured by JEOL Ltd., and a deuterated chromate form, deuterium of about 5% by mass of a polymer sample for a positive resist was used.
- a solution of fluorinated acetone or deuterated dimethyl sulfoxide was placed in a test tube with a diameter of 5 mm and the measurement was performed at a measurement temperature of 40 ° C, an observation frequency of 270 MHz, and a single pulse mode, with a total of 64 times.
- the thermal stability was evaluated based on the ratio S of the oxygen in the acetal structure and the hydrogen bonded to the carbon sandwiched by the oxygen, and how much it did not change.
- Thermal stability index ⁇ (Integrated value of oxygen bonded to oxygen and carbon sandwiched between oxygen after thermal decomposition test) Z (Chemical shift ⁇ value after thermal decomposition test Total integrated value between 0 and 2.6 ppm) ⁇ / ⁇ (Integral value of oxygen and hydrogen bound to carbon sandwiched between oxygen before thermal decomposition test) / (Chemical shift before thermal decomposition test ⁇ value Total integrated value between 0 and 2.6 ppm) ⁇
- thermal stability index The closer the thermal stability index is to 1, the higher the thermal stability of the acetal. If the thermal stability index is smaller than 1, it indicates that the thermal stability of the acetal is lower.
- HAdMA5.2 expressed by the following formula, 2 parts,
- PGMEA40 4 parts and dimethyl 2,2'-azobisisobutyrate (hereinafter referred to as DAIB) It was dropped into the flask at a constant rate over 4 hours. Thereafter, the temperature of 80 ° C was maintained for 3 hours.
- DAIB dimethyl 2,2'-azobisisobutyrate
- the precipitate after washing was separated by filtration and dried under reduced pressure at 60 ° C. for about 40 hours to obtain a copolymer P-1.
- the thermal stability of the acetal structure of the obtained copolymer P-1 was measured. Table 1 shows the results.
- the methacrylic acid adduct 110.Og represented by the above formula (7) obtained in the same manner as in Example 3 was charged into a 1-L glass three-necked flask equipped with a stirrer and a thermometer, and 200 ml of dimethylformamide Then, 50.5 g of triethylamine was stirred into the syrup. While stirring, while maintaining the internal temperature at 25 ° C, 74.0 g (0.5 mol) of chloromethylcyclohexyl ether was added dropwise over 3 hours using a dropping funnel. After completion of the dropwise addition, the mixture was stirred at room temperature for 1 hour, and then 600 ml of toluene and 200 ml of water were added.
- Copolymer P-3 was obtained in the same manner as in Example 3, except that a monomer solution obtained by mixing 1 part of PGMEA365, 6.56 parts of AIBN, and 58 parts of nOMO was used. Table 1 shows the measurement results of the physical properties of the copolymer P-3.
- the polymer of the present invention is useful as a constituent resin of a positive resist.
- the polymer of the present invention when used as a resist resin in DUV excimer laser lithography, electron beam lithography, EUV lithography, and the like, it has high sensitivity and high resolution, and has poor line edge roughness and tailing. Since it is excellent, a highly accurate and fine resist pattern can be stably formed.
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Description
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US11/596,865 US8088875B2 (en) | 2004-05-20 | 2005-05-17 | (Meth)acrylate, polymer and resist composition |
JP2006513693A JP5269311B2 (ja) | 2004-05-20 | 2005-05-17 | (メタ)アクリル酸エステル、重合体、およびレジスト組成物 |
US12/393,455 US8114949B2 (en) | 2004-05-20 | 2009-02-26 | (Meth)acrylate, polymer and resist composition |
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US11/596,865 A-371-Of-International US8088875B2 (en) | 2004-05-20 | 2005-05-17 | (Meth)acrylate, polymer and resist composition |
US12/393,455 Continuation US8114949B2 (en) | 2004-05-20 | 2009-02-26 | (Meth)acrylate, polymer and resist composition |
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JP (1) | JP5269311B2 (ja) |
KR (1) | KR100827903B1 (ja) |
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WO (1) | WO2005113617A1 (ja) |
Cited By (2)
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JP2014071075A (ja) * | 2012-10-01 | 2014-04-21 | Mitsubishi Rayon Co Ltd | 重合体の分子量の測定方法、重合体の製造方法、レジスト組成物の製造方法、ならびにパターンが形成された基板の製造方法 |
JP2014156586A (ja) * | 2013-01-21 | 2014-08-28 | Sumitomo Chemical Co Ltd | 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法 |
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US8088875B2 (en) * | 2004-05-20 | 2012-01-03 | Mitsubishi Rayon Co., Ltd. | (Meth)acrylate, polymer and resist composition |
US8017303B2 (en) * | 2009-02-23 | 2011-09-13 | International Business Machines Corporation | Ultra low post exposure bake photoresist materials |
JP5541766B2 (ja) * | 2009-05-19 | 2014-07-09 | 株式会社ダイセル | フォトレジスト用高分子化合物の製造方法 |
JP5708082B2 (ja) * | 2010-03-24 | 2015-04-30 | 信越化学工業株式会社 | パターン形成方法及びネガ型レジスト組成物 |
JP6477667B2 (ja) * | 2016-11-08 | 2019-03-06 | トヨタ自動車株式会社 | 成形体製造方法、及び、成形体製造装置 |
DE102017220993A1 (de) * | 2017-11-23 | 2019-05-23 | Henkel Ag & Co. Kgaa | Mittel zur temporären Verformung von keratinischen Fasern |
CN110531579A (zh) * | 2019-09-26 | 2019-12-03 | 京东方科技集团股份有限公司 | 掩模版及其制造方法、光刻方法、显示面板、曝光装置 |
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- 2005-05-17 WO PCT/JP2005/008955 patent/WO2005113617A1/ja active Application Filing
- 2005-05-19 TW TW094116379A patent/TWI359820B/zh active
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TWI359820B (en) | 2012-03-11 |
KR100827903B1 (ko) | 2008-05-07 |
KR20070027597A (ko) | 2007-03-09 |
JP5269311B2 (ja) | 2013-08-21 |
US8114949B2 (en) | 2012-02-14 |
US20090226851A1 (en) | 2009-09-10 |
JPWO2005113617A1 (ja) | 2008-03-27 |
US20080003529A1 (en) | 2008-01-03 |
US8088875B2 (en) | 2012-01-03 |
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