WO2005059602A1

WO2005059602A1 - Light absorptive antireflector

Info

Publication number: WO2005059602A1
Application number: PCT/JP2004/018905
Authority: WO
Inventors: Yuko Tachibana; Hisashi Ohsaki
Original assignee: Asahi Glass Company, Limited
Priority date: 2003-12-18
Filing date: 2004-12-17
Publication date: 2005-06-30
Also published as: JPWO2005059602A1; TW200533949A

Abstract

Disclosed is a low-cost light absorptive antireflector with high visible light transmittance and low visible light reflectance which has low reflectance to lights in a wide wavelength range. The light absorptive antireflector comprises a base (2), and a first thin film (3), a light absorptive film (4) and a second thin film (6) sequentially formed on the base (2) in this order. The first thin film (3) has a geometrical film thickness of 1-200 nm and is composed of a material having a refractive index of not less than 1.3 and not more than 2.6. The light absorptive film (4) has a geometrical film thickness of 1-8 nm and contains at least one substance selected from the group consisting of titanium nitride, titanium oxynitride, gold and copper. The second thin film (6) has a geometrical film thickness of 45-165 nm and is composed of a material having a refractive index of not less than 1.3 and not more than 1.6.

Description

Specification

Light absorbing anti-reflective body

Technical field

The present invention relates to a light-absorptive antireflective body in which a plurality of films are laminated on a base material.

^ Scenic technology

[0002] Conventionally, as a light-absorbing antireflective body, a first thin film having a low refractive index transparent dielectric power from the substrate side for the purpose of improving the antireflection property and electromagnetic shielding property of a display portion of a display or the like. It is known to laminate a layer, a second thin film layer made of a transparent dielectric material having a high refractive index, and a third layer made of a transparent material having a considerable conductivity and a high refractive index (for example, see Patent Reference 1).

[0003] However, in such an antireflection body having a multilayer structure, it is necessary to increase the number of layers constituting the antireflection body in order to widen a wavelength range showing low reflectivity. There was a problem that cost increased.

[0004] On the other hand, an antireflection body composed of two layers in which a substrate-side light-absorbing film and a silica film are laminated has been proposed as an extremely simplified number of layers constituting the antireflection body. (For example, see Patent Document 2).

Patent Document 1: JP-A-60-168102

Patent Document 2: Japanese Patent Application Laid-Open No. 9-156964

Disclosure of the invention

Problems to be solved by the invention

[0005] However, the visible light transmittance of the antireflection body according to Patent Document 2 is 75. / ₀ or less, and 80 in this antireflection body. When the light-absorbing film is thinned to obtain a visible light transmittance of / o or more, it is possible to obtain an anti-reflection body that has low visible light reflectance of 1% or less and low reflection over a wide wavelength range. Did not.

[0006] In view of the above-mentioned problems of the prior art, an object of the present invention is to provide a low-cost, low-visible-light reflectance, low-light-reflection, and low-reflection light in a wide wavelength range in addition to high visible-light transmittance. An antireflective body is provided.

Means for solving the problem

The present invention achieves the above object and has the following gist.

1. a first thin film made of a substance having a geometric thickness of 11 to 200 nm and a refractive index of 1.3 or more and 2.6 or less on the substrate from the substrate side; A light-absorbing film containing at least one substance selected from the group consisting of titanium nitride, titanium oxynitride, gold, and copper; A light-absorbing anti-reflective body comprising: a second thin film having a refractive index of 45 to 165 nm and a refractive index of 1.3 or more and 1.6 or less.

2. The first thin film is made of magnesium fluoride, aluminum oxide, zinc oxide, tin oxide, indium oxide, molybdenum oxide, tantalum oxide, zirconium oxide, niobium oxide, titanium oxide, silicon nitride, silicon oxynitride and nitrided. 2. The light-absorptive antireflection body according to the above item 1, which is a film containing at least one substance selected from the group consisting of aluminum.

3. The second thin film is formed of at least one selected from the group consisting of silicon oxide, magnesium fluoride, calcium fluoride, fluorinated aluminum, aluminum oxide, lanthanum fluoride, and sodium fluoride aluminate. 3. The light-absorbing anti-reflective body according to 1 or 2, which is a film containing a substance.

4. The light-absorbing anti-reflective body according to the above 1, 2, or 3, wherein the second thin film is a film substantially composed of silicon oxide.

5. The light according to any one of items 1 to 4, wherein the light absorbing film is a film containing at least one or more substances selected from the group consisting of titanium nitride and titanium oxynitride. Absorbing anti-reflective body.

6. The light-absorbing anti-reflective body according to any one of the above items 15 to 15, further comprising a hard coat layer between the base material and the first thin film.

7. a first thin film made of a substance having a geometric thickness of 50 nm and a refractive index of 1.3 or more and less than 1.5 on the substrate from the substrate side; At least one material selected from the group consisting of titanium nitride and titanium oxynitride, having a target film thickness of 5-8 nm. A light-absorbing anti-reflective body comprising: a light-absorbing film containing: and a second thin film having a geometric film thickness of 65 to 120 nm and made of silicon oxide.

8. a first thin film made of a substance having a geometric thickness of 11 to 200 nm and a refractive index of 1.5 or more and 1.7 or less on the substrate from the substrate side, A light absorbing film containing at least one substance selected from the group consisting of titanium nitride and titanium oxynitride having a thickness of 37 nm, a geometric thickness of 65 to 120 nm, And a second thin film made of silicon oxide.

9. A first thin film made of a substance having a geometric thickness of 1 to 55 nm and a refractive index of 1.9 or more and 2.1 or less on the substrate from the substrate side, A light-absorbing film containing at least one substance selected from the group consisting of titanium nitride and titanium oxynitride having a thickness of 37 nm, a geometric thickness of 60 165 nm, And a second thin film made of silicon oxide.

10. A first thin film made of a material having a geometric film thickness of 125 nm and a refractive index of 2.3 or more and 2.7 or less on the substrate from the substrate side, A light-absorbing film containing at least one material selected from the group consisting of titanium nitride and titanium oxynitride, having a thickness of 3 to 7 nm, and a geometric thickness of 45 to 160 nm; And a second thin film made of silicon oxide.

The invention's effect

[0008] The light-absorbing anti-reflective body of the present invention is a light-absorbing anti-reflective body that is low in cost, has high visible light transmittance, low visible light reflectance, and low reflection in light in a wide wavelength range. I will.

Brief Description of Drawings

FIG. 1 is a schematic cross-sectional view according to an embodiment of the light-absorbing antireflection body of the present invention.

Explanation of symbols

[0010] 1 light-absorbing anti-reflective body

2 Substrate

3 First thin film

4 Light absorbing film 5 Oxidation barrier film

6 Second thin film

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an example of a light-absorbing antireflection body according to an embodiment of the present invention will be described in detail with reference to the drawings.

[Embodiment]

FIG. 1 shows a light-absorptive antireflection body 1 according to a first embodiment of the present invention. The light-absorbing antireflective body 1 basically has a first thin film 3 provided on a base material 2, a light-absorbing film 4 provided on the first thin film 3, and a light-absorbing film 4. A second thin film 6 is provided thereon. In the present embodiment, an oxidation barrier film 5 is provided between the light absorbing film 4 and the second thin film 6, and the first thin film 3, the light absorbing film 4, the oxidation barrier film 5, and the second The light-absorbing anti-reflective body 1 has a four-layer structure including the thin film 6 of FIG.

[0013] (Substrate)

The material of the substrate 2 may be any material as long as it is smooth and transparent and can transmit visible light. For example, plastic, glass and the like can be mentioned.

Examples of the plastic include polyethylene terephthalate (PET), polycarbonate, triacetyl cellulose, polyether sulfone, and polymethyl methacrylate.

[0014] The thickness of the substrate 2 is appropriately selected depending on the application. For example, it may be a film or a plate. Further, the base material 2 may be composed of a single layer or a laminate of a plurality of layers.

The base material 2 may be used by sticking it to another glass plate, plastic plate, or the like with an adhesive or the like.For example, a thin film-shaped plastic base material 2 may be used on another plastic plate, glass plate, etc. Alternatively, the base material 2 of the glass plate may be attached to another glass plate, a plastic plate, or the like.

[0015] (First thin film)

The first thin film 3 is made of a substance having a refractive index of 1.3 or more and 2.6 or less. . For example, magnesium fluoride (n: l.38), aluminum oxide (n: l.6), zinc oxide (n: 1.9), tin oxide (n: 2.0), indium oxide (n: 2. 0), molybdenum oxide, tantalum oxide (η: 2.4), zirconium oxide (η: 2.0), niobium oxide (η: 2.35), titanium oxide (η: 2.4), silicon nitride ( η: 2.0), at least one substance selected from the group consisting of silicon oxynitride (η: 1.6-1.9), aluminum nitride (η: 1.7), and the like. Among them, zinc oxide, tin oxide, silicon nitride, titanium oxide and aluminum oxide are preferred. By using such a substance, the first thin film 3 has excellent chemical stability and can have high mechanical strength. The first thin film 3 is preferably made of a substance having a refractive index of 1.6 or more and 2.6 or less.

Note that the refractive index (η) in this specification refers to the refractive index of light having a wavelength of 550 nm.

[0016] The geometric thickness of the first thin film 3 is 11 to 200 nm. By providing the first thin film 3 between the substrate 2 and the light absorbing film 4, even if the film thickness of the light absorbing film 4 is reduced for the purpose of obtaining a high visible light transmittance of 80% or more, The light-absorbing anti-reflective body 1 having low reflectance in a wide wavelength range while satisfying low visible light reflectance of 1% or less can be obtained.

When the geometric thickness of the first thin film 3 is larger than 200 nm, the minimum reflectance is reduced and a low visible light reflectance can be obtained. However, at a wavelength other than the design wavelength, the light reflectance is low. Rapidly increases, does not exhibit low reflectance over a wide wavelength range, and cannot obtain a favorable reflection color tone.

In this specification, the reflectance that becomes the smallest in the visible light wavelength region is defined as the minimum reflectance, and the wavelength that provides the reflectance is referred to as a design wavelength.

On the other hand, if the geometric thickness of the first thin film 3 is less than 1 nm, the minimum reflectance increases, and a low visible light reflectance cannot be obtained.

For this reason, in order to reduce the minimum reflectance and the visible light reflectance, to obtain a low reflectance over a wide wavelength range, and to obtain a preferable reflection color tone, the geometric thickness of the first thin film 3 is set to be 1 to 200 nm. It is necessary to The optimum geometric film thickness of the first thin film 3 depends on the refractive index of the material constituting the film, but is preferably 1 to 170 nm, more preferably 3 to 160 nm.

Generally, light-absorbing anti-reflective materials are used to absorb light for the purpose of obtaining high visible light transmittance. When the conductive film is thinned, the visible light reflectance increases. Since the light-absorbing antireflection body of the present invention has the first thin film on the substrate side of the light-absorbing film, it is possible to suppress an increase in visible light reflectance even when the light-absorbing film is thinned. Thus, low reflection can be obtained for light in a wider wavelength range.

[0018] (Light absorbing film)

The light-absorbing film 4 has a geometric film thickness of 18 nm, and a group consisting of titanium nitride, titanium oxynitride, gold, and copper. It is configured. The light absorbing film 4 is preferably made of at least one substance selected from the group consisting of titanium nitride and titanium oxynitride. When titanium oxynitride is used as the light-absorbing film 4, the atomic ratio of oxygen to titanium is preferably 0.11 to 0.33. When the atomic ratio is within the above range, a light-absorbing anti-reflective body having low reflection in light in a wider wavelength range can be obtained.

As the light-absorbing film containing gold, a gold film, an alloy film containing 50% by mass or more of gold, or the like is preferable.

Further, the light absorbing film containing copper includes a copper film, a copper nitride film, a copper oxynitride film, a copper carbide film, a copper carbonitride film, an alloy film containing 50% by mass or more of copper, and an alloy film of the alloy. A nitride film, an oxynitride film of the alloy, a carbide film of the alloy, a carbonitride film of the alloy, or the like is preferable.

[0019] The geometric thickness of the light-absorbing film 4 is 118 nm. If the geometric thickness of the light-absorbing film 4 is less than 1 nm, the visible light transmittance increases, but a low visible light reflectance and a low reflectance in a wide wavelength range cannot be obtained. On the other hand, if the geometric thickness of the light absorbing film 4 is larger than 8 nm, a low visible light reflectance and a low reflectance over a wide wavelength range can be obtained, but the visible light transmittance is low.

The optimal geometric film thickness of the light-absorbing film 4 depends on the refractive index of the material constituting the film, but is preferably 3-7 nm, more preferably 4-16 nm.

[0020] (Second thin film)

The second thin film 6 has a geometric thickness of 45 to 165 nm and is made of a substance having a refractive index of 1.3 or more and 1.6 or less.

For example, silicon oxide (n: 1.46), magnesium fluoride (n: 1.38), calcium fluoride ( n: l. 4), aluminum fluoride (n: l. 3), aluminum oxide (n: 1.6), lanthanum fluoride (n: l. 58), and sodium fluoroaluminate (Na AIF) ) (n

3 6

: 1. At least one substance or organic compound selected from the group consisting of 35). Among them, silicon oxide is preferred because of its excellent chemical stability and high mechanical strength.

[0021] The geometric thickness of the second thin film 6 is 45 165 nm. The wavelength range in which the geometrical thickness of the second thin film 6 is low and the reflectance is low is on the low wavelength side. On the other hand, if the geometric film thickness is large, the wavelength range showing low reflectance is on the long wavelength side.

The optimum geometric film thickness of the second thin film 6 depends on the refractive index of the material constituting the film, but is preferably f to 60 to 155 nm, more preferably f to 65 150 nm.

[0022] The three layers of the first thin film 3, the light absorbing film 4, and the second thin film 6 are adjusted to an optimal geometric film thickness depending on the refractive index of each material constituting the film. This makes it possible to obtain a light-absorbing anti-reflective body 1 having a visible light transmittance of 80% or more and a visible light reflectance of 1% or less, more preferably 0.6% or less.

For example, when the material forming the first thin film 3 is a material having a refractive index of 1.3 or more and less than 1.5, a preferable geometric film thickness of the first thin film 3 is 1 to 50 nm. Yes, more preferably 5-3 Onm. When the first thin film 3 has the above-mentioned refractive index and thickness, the light absorbing film 4 has a small thickness selected from the group consisting of titanium nitride and titanium oxynitride having a geometric thickness of 5 to 8 nm. Preferably, it is at least one or more substances. The second thin film 6 is preferably a silicon oxide having a geometric thickness of 65 to 120 nm, more preferably 70 to 11 Onm.

[0024] When the material constituting the first thin film 3 is a material having a refractive index of 1.5 or more and 1.7 or less, a preferable geometric film thickness of the first thin film 3 is 11 200 nm, More preferably, it is 30-170ηm. When the first thin film 3 has the above-mentioned refractive index and thickness, the light absorbing film 4 has at least a geometric thickness of 37 nm selected from the group consisting of titanium nitride and titanium oxynitride. Preferably, it is one or more substances. The second thin film 6 is preferably a silicon oxide having a geometric thickness of 65 to 120 nm, and more preferably a geometric thickness of 75 to 110 nm. [0025] When the material constituting the first thin film 3 is a material having a refractive index of 1.9 or more and 2.1 or less, a preferable geometric film thickness of the first thin film 3 is 1-155 nm, More preferably, it is 5-50 nm. When the first thin film 3 has the above-mentioned refractive index and film thickness, the light absorbing film 4 has at least one kind selected from the group consisting of titanium nitride and titanium oxynitride having a geometric film thickness of 37 nm. The above substances are preferably used. The second thin film 6 is preferably a silicon oxide having a geometric film thickness of 60 to 165 nm, more preferably 80 155 nm.

[0026] When the material constituting the first thin film 3 is a material having a refractive index of 2.3 or more and 2.7 or less, a preferable geometric film thickness of the first thin film 3 is 1 25 nm, More preferably, it is 320 nm. When the first thin film 3 has the above-mentioned refractive index and film thickness, the light absorbing film 4 has at least one kind selected from the group consisting of titanium nitride and titanium oxynitride having a geometric film thickness of 37 nm. The above substances are preferably used. The second thin film 6 is preferably a silicon oxide having a geometric thickness of 45 to 160 nm, and more preferably a geometric thickness of 65 to 150 nm.

[0027] Examples of a method for forming each film in the present invention include a vacuum deposition method and a sputtering method. According to the sputtering method, a film can be uniformly formed on a large-sized substrate. In particular, a DC reactive sputtering method is industrially preferable.

[0028] Further, when the second thin film 6 is formed between the light absorbing film 4 and the second thin film 6, the light absorbing film 4 is prevented from being oxidized. In the case where titanium oxynitride is used as 4, an oxide barrier film 5 can be provided in order to keep the atomic ratio of oxygen to titanium at a preferable value.

The oxidation barrier film 5 is a thin film formed to prevent the light absorbing film 4 formed thereunder from being oxidized, and is optically meaningless.

The geometric thickness of the oxidation barrier film 5 is preferably 5 nm or less so as not to impair the antireflection performance.

As the oxidation barrier film 5, various metals or metal nitrides such as silicon nitride can be used. Among them, the group consisting of chromium, molybdenum, tungsten, vanadium, niobium, tantalum, zinc, nickel, palladium, platinum, aluminum, indium, tin and silicon When a film containing at least one metal as a main component or a film containing these nitrides as a main component, or a film containing at least one metal of the group consisting of titanium, zirconium, and hafnium as a main component is used, It is preferable because both the improvement of the antioxidant performance and the maintenance of the excellent antireflection characteristics can be achieved.

[0030] In particular, a film containing silicon as a main component or a film containing silicon nitride as a main component has excellent oxide barrier performance, and when a silicon oxide film is formed using a Si target. In addition, there is no need to increase the target material, which is advantageous in manufacturing.

Examples of the method of forming the oxidation barrier film 5 include a vapor deposition method, a sputtering method, and a CVD method.

[0031] A hard coat layer can be provided between the base material 2 and the first thin film 3 in order to impart a desired hardness to the light-absorbing anti-reflective body 1. The hard coat layer is transparent and has a refractive index equal to the refractive index (n) of the substrate 2 or within ± 0.1 of the refractive index (n) of the substrate 2. Should be fine. For example, a resin mainly composed of an ultraviolet curable acrylic resin, a silicone resin, or the like can be used. These resins may contain additives.

As a method for forming the hard coat layer, known coating methods such as a bar coating method, a doctor blade method, a reverse mouth coating method, and a gravure roll coating method can be used. The geometric thickness of the hard coat layer is preferably 10 / m or less.

Example

Hereinafter, the present invention will be described in more detail with reference to Examples. In addition, the mechanical film thickness of each thin film in the following Examples and Comparative Examples was obtained as follows.

A substrate having a surface drawn with an oil pen in advance is introduced into a film forming chamber. A single-layer film is formed on the substrate under the respective film-forming conditions of the thin film formed in each example, and two types of substrates with a single-layer film with different film-forming times are manufactured. After each of the two types of substrates with a single-layer film is taken out of the film-forming chamber, they are rubbed with a cloth soaked in ethanol, drawn on the substrate with an oil-based pen, and wiped with the thin film formed on the lines. Stylus-type surface gage: Using a stylus-type surface tracer (RanK Taylor Hobson, Talystep), scan from the part where the oil-based magic is wiped to the part where the thin film is formed, film Each thickness is measured. From the measured geometric film thickness and film formation time, a calibration curve is prepared under each film formation condition. Using this calibration curve, the geometric film thickness of the thin film corresponding to each film formation time is obtained.

[Example 1]

After evacuation of the film formation chamber to 0.27 mPa, a sputter gas consisting of a nitrogen gas concentration of 30% by volume and the balance of argon gas power was introduced into the film formation chamber, and an n-type silicon having a size of 20 cm × 7 cm × O. 0.39kw electric power is applied to the contarget, and a 15 ηm-thick silicon nitride (first thin film) is applied on a PET (100 μm thick) substrate with a hard coat layer by DC reactive sputtering. Formed.

[0035] Next, the nitrogen gas concentration of 10 vol ^_0/0, the sputtering gas and the balance argon gas was introduced into the film forming chamber, the 20cm X 7cm X O. 5cm size power 0. 26Kw titanium target Then, titanium nitride (light absorbing film) with a thickness of 5 nm was formed thereon by DC reactive sputtering.

[0036] Further, the nitrogen gas concentration of 30 vol ^_0/0, the sputtering gas and the balance argon gas was introduced into the film forming chamber, 20cm X 7cm X O. 5cm size electrodeposition 0 · 39Kw the n-type silicon target A force was applied, and a 3 nm-thick silicon nitride film was formed thereon by a DC reactive sputtering method.

This silicon nitride film is an oxidation barrier film for preventing the titanium nitride film from being oxidized when the second thin film thereon is formed by a reactive sputtering method, and forms the second thin film. Since it is oxidized at the time, it has no optical effect.

[0037] Then, the oxygen gas concentration of 60 vol ^_0/0, the sputtering gas and the balance argon gas was introduced into the film forming chamber, 20cm X 7cm X O. 5cm of size n-type silicon target to electrodeposition of 0. 77Kw of A force was applied, and a 125 nm-thick silicon oxide (second thin film) was formed thereon by a DC reactive sputtering method.

Table 1 summarizes the composition and thickness of the prepared films. Note that, since each of the formed films is non-stoichiometric, the composition ratio of the films in Table 1 is not considered.

[0038] <Evaluation>

A black paint is applied to the surface of the substrate on which the film of the obtained light-absorbing anti-reflective body is not formed. After forming a film, the reflectance and the transmittance on the side of the cloth were measured using a spectrophotometer (ART-25GT, manufactured by JASCO Corporation. The visible light transmittance CJIS Z was obtained from the measurement result of the reflectance. The reflex stimulus value Y) specified in 8701 was determined to be 81.2%. The visible light reflectance tilS Z 8701) was 0.5%. Table 1 shows the measurement results.

A light-absorbing antireflective body having a low visible light reflectance of 1% or less was obtained while satisfying a high visible light transmittance of 80% or more. Further, in the light-absorbing antireflection body, the wavelength of light having a reflectance of 1% or less is 455 to 635 nm, and the reflectance is 1 in a wide wavelength range. /. The following light-absorbing antireflective body was obtained.

[Example 2]

A light-absorbing anti-reflective body was produced in the same manner as in Example 1 except that the film thicknesses of silicon nitride (first thin film) and silicon oxide (second thin film) were changed. Table 1 summarizes the composition and thickness of the prepared films, and the measurement results of visible light transmittance and visible light reflectance.

A light-absorbing antireflective body having a low visible light reflectance of 1% or less was obtained while satisfying a high visible light transmittance of 80% or more. In addition, in the light-absorbing antireflective body, a light having a reflectance of 1% or less had a wavelength of 460 to 620 nm, and a light-absorbing antireflective body having a reflectance of 1% or less in a wide wavelength range was obtained. .

[Example 3]

A light-absorbing anti-reflective body was produced in the same manner as in Example 1, except that the thicknesses of titanium nitride (light-absorbing film) and silicon oxide (second thin film) were changed. Table 1 summarizes the composition and thickness of the prepared films, and the measurement results of visible light transmittance and visible light reflectance.

A light-absorbing antireflective body having a low visible light reflectance of 1% or less was obtained while satisfying a high visible light transmittance of 80% or more. Further, in the light-absorbing antireflective body, the wavelength of light having a reflectance of 1% or less is 450 to 640 nm, and the reflectance is 1 in a wide wavelength range. /. The following light-absorbing antireflective body was obtained.

Example 4

A light-absorbing anti-reflective body was produced in the same manner as in Example 1 except that the light-absorbing film was made of titanium oxynitride. Table 1 summarizes the measurement results of the composition and thickness of the formed film, the visible light transmittance and the visible light reflectance. A light-absorbing antireflective body having a low visible light reflectance of 1% or less was obtained while satisfying a high visible light transmittance of 80% or more. Further, in the light-absorbing antireflection body, the wavelength of light having a reflectance of 1% or less is 440 to 650 nm, and the reflectance is 1 in a wide wavelength range. /. The following light-absorbing antireflective body was obtained.

Example 5

The thickness of silicon nitride (first thin film), titanium nitride (light absorbing film), and silicon oxide (second thin film) were changed, and the other conditions were the same as in Example 1 except for the light absorbing antireflection. The body was made. Table 1 summarizes the measurement results of the composition and thickness of the formed film, and the visible light transmittance and visible light reflectance.

A light-absorbing antireflective body having a low visible light reflectance of 1% or less was obtained while satisfying a high visible light transmittance of 80% or more. In addition, in the light-absorbing antireflective body, a light having a reflectance of 1% or less had a wavelength of 455 to 600 nm, and a light-absorbing antireflective body having a reflectance of 1% or less in a wide wavelength range was obtained. .

Example 6

A light-absorbing anti-reflective member is manufactured in the same manner as in Example 1 except that the first thin film is made of titanium oxide and the thickness of silicon oxide (the second thin film) is changed. Table 1 summarizes the measurement results of the composition and thickness of the prepared film, the visible light transmittance and the visible light reflectance.

A light-absorbing anti-reflective body having a low visible light reflectance of 1% or less while satisfying a high visible light transmittance of 80% or more can be obtained. Further, in the light-absorbing antireflective body, a light having a reflectance of 1% or less has a wavelength of 460 to 600 nm, and a light-absorbing antireflective body having a reflectance of 1% or less in a wide wavelength range can be obtained.

Example 7

A light-absorbing anti-reflective member is manufactured in the same manner as in Example 1 except that the first thin film is made of aluminum oxide and the thickness of silicon oxide (the second thin film) is changed. Table 1 summarizes the measurement results of the composition and thickness of the formed film, and the visible light transmittance and visible light reflectance.

A light-absorbing anti-reflective body having a low visible light reflectance of 1% or less while satisfying a high visible light transmittance of 80% or more can be obtained. In addition, in the light-absorbing antireflective body, the wavelength of light having a reflectance of 1% or less is 460 to 600 nm, and the light is reflected in a wide wavelength range. A light-absorbing antireflective body having a ratio of 1% or less is obtained.

[Comparative Example 1]

Without forming silicon nitride (first thin film), a light-absorbing film was formed directly on the substrate, and the thickness of silicon oxide (second thin film) was changed. In the same manner, a light-absorbing antireflection body was produced. Table 1 summarizes the measurement results of the composition and thickness of the formed film, the visible light transmittance and the visible light reflectance.

The visible light reflectance of the obtained light-absorbing antireflection body was 1% or more.

[Comparative Example 2]

Without forming silicon nitride (first thin film), a light-absorbing film was formed directly on the substrate, and the film thickness of titanium nitride (light-absorbing film) and silicon oxide (second thin film) was changed. Otherwise, the procedure of Example 1 was repeated to prepare a light-absorbing antireflective member. Table 1 summarizes the measurement results of the composition and thickness of the formed film, the visible light transmittance and the visible light reflectance.

The visible light transmittance of the obtained light-absorbing antireflective body did not reach 80%. In addition, in the light-absorbing antireflection body, the wavelength of light having a reflectance of 1% or less was 450 to 700 nm.

[Comparative Example 3]

The thickness of silicon nitride (first thin film), titanium nitride (light absorbing film) and silicon oxide (second thin film) were changed, and the other conditions were the same as in Example 1 except for the light absorbing antireflection. The body was made. Table 1 summarizes the measurement results of the composition and thickness of the formed film, and the visible light transmittance and visible light reflectance.

The visible light transmittance of the obtained light-absorbing antireflective body did not reach 80%. In addition, in the light-absorbing antireflection body, the wavelength of light having a reflectance of 1% or less was 430 730 nm.

[Comparative Example 4]

A light-absorbing anti-reflective body was produced in the same manner as in Example 1 except that the film thickness of titanium nitride (light-absorbing film) and silicon oxide (second thin film) were changed. Table 1 summarizes the composition and thickness of the prepared films, and the measurement results of visible light transmittance and visible light reflectance.

The visible light transmittance of the obtained light-absorbing antireflective body did not reach 80%. Also, the light In the absorptive antireflection body, the wavelength of light having a reflectance of 1% or less was 460 to 690 nm.

From these results, in the example, the visible light transmittance was 80% or more and the visible light reflectance was

A good light-absorbing antireflective body of 1% or less was obtained.

[0050] [Table 1]

First thin film Light absorbing film Oxidation barrier film Second thin film Visible light transmittance Visible π reflectance Reflectivity 1% or less Composition Thickness (nm: Composition Thickness (nm: Composition Thickness (nm: Composition Thickness) (Nm: (%) (%) Light wavelength range (nm) Example 1 SiN 15 TiN 5 SiN 3 SiO 125 81.2 0.5 455 to 635 Example 2 SiN 20 TiN 5 SiN 3 SiO 123 81.9 0.6 460-620 Example 3 SiN 15 TiN 6 SiN 3 SiO 118 80.2 0.5 450 to 640 Example 4 SiN 15 TiON 5 SiN 3 SiO 125 81.0 0.5 440--650 Example 5 SiN 20 TiN 4 SiN 3 SiO 118 84.5 0.6 455 to 600 Example 6 TiO 10 TiN 5 SiN 3 SiO 110 81.0 0.5 460-600 Example 7 AIO 100 TiN 5 SiN 3 SiO 80 81.0 0.5 460-600 Comparative example 1 TiN 5 SiN 3 SiO 105 80.0 1.2

Comparative Example 2 TiN 8 SiN 3 SiO 90 72.0 0.5 450-700 Comparative Example 3 SiN 2 TiN 9 SiN 3 SiO 90 71.5 0.3 430-730 Comparative Example 4 SiN 15 TiN 9 SiN 3 SiO 90 0.3 460-690

O C

Claims

The scope of the claims

[1] On the substrate, from the substrate side,

A first thin film made of a material having a geometric thickness of 11 to 200 nm and a refractive index of 1.3 or more and 2.6 or less;

A light-absorbing film having a geometric film thickness of 118 nm and containing at least one substance selected from the group consisting of titanium nitride, titanium oxynitride, gold and copper;

A light-absorbing antireflection body, comprising: a second thin film made of a substance having a geometric thickness of 45 to 165 nm and a refractive index of 1.3 or more and 1.6 or less. .

[2] The first thin film is made of magnesium fluoride, aluminum oxide, zinc oxide, tin oxide, indium oxide, molybdenum oxide, tantalum oxide, zirconium oxide, niobium oxide, titanium oxide, silicon nitride, oxynitride. 2. The light-absorbing antireflective body according to claim 1, wherein the light-absorbing antireflection body is a film containing at least one or more substances selected from the group consisting of silicon and aluminum nitride.

[3] The second thin film is at least one selected from the group consisting of silicon oxide, magnesium fluoride, calcium fluoride, aluminum fluoride, aluminum oxide, lanthanum fluoride, and sodium fluoride aluminate. 3. The light-absorbing anti-reflective body according to claim 1, wherein the light-absorbing anti-reflective body is a film containing the substance.

4. The light-absorbing anti-reflective body according to claim 1, wherein the second thin film is a film substantially made of silicon oxide.

5. The light-absorbing film according to claim 1, wherein the light-absorbing film is a film containing at least one or more substances selected from the group consisting of titanium nitride and titanium oxynitride. Light absorbing anti-reflective body.

[6] The light-absorbing anti-reflective body according to any one of [15] to [15], further comprising a hard coat layer between the base material and the first thin film.

[7] On the substrate, from the substrate side,

A first thin film made of a material having a geometric film thickness of 50 nm and a refractive index of 1.3 or more and less than 1.5;

It has a geometric thickness of 5-8 nm and is selected from the group consisting of titanium nitride and titanium oxynitride. A light-absorbing film containing at least one or more substances selected,

A light-absorbing anti-reflective body having a geometric thickness of 65 to 120 nm and a second thin film made of silicon oxide.

[8] On the substrate, from the substrate side,

A first thin film made of a material having a geometric film thickness of 200 nm and a refractive index of 1.5 or more and 1.7 or less;

A light-absorbing film having a geometric thickness of 37 nm and containing at least one substance selected from the group consisting of titanium nitride and titanium oxynitride;

A light-absorbing antireflective body, comprising: a second thin film made of silicon oxide, having a geometric film thickness of 65 to 120 nm.

[9] On the substrate, from the substrate side,

A first thin film made of a material having a geometric thickness of 1 to 55 nm and a refractive index of 1.9 or more and 2.1 or less;

A light-absorbing film having a geometric thickness of 3 to 7 nm and containing at least one or more substances selected from the group consisting of titanium nitride and titanium oxynitride;

A light-absorbing anti-reflective body having a geometric thickness of 60 to 165 nm and a second thin film made of silicon oxide.

[10] On the substrate, from the substrate side,

A first thin film made of a material having a geometric thickness of 125 nm and a refractive index of 2.3 or more and 2.7 or less;

A light-absorbing antireflective body, comprising: a second thin film made of silicon oxide having a geometric thickness of 45 to 160 nm.