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WO2000072360A3 - Junctionisolierter lateral-mosfet für high-/low-side-schalter - Google Patents

Junctionisolierter lateral-mosfet für high-/low-side-schalter Download PDF

Info

Publication number
WO2000072360A3
WO2000072360A3 PCT/DE2000/001492 DE0001492W WO0072360A3 WO 2000072360 A3 WO2000072360 A3 WO 2000072360A3 DE 0001492 W DE0001492 W DE 0001492W WO 0072360 A3 WO0072360 A3 WO 0072360A3
Authority
WO
WIPO (PCT)
Prior art keywords
low side
side switches
lateral mosfet
conductive
zone
Prior art date
Application number
PCT/DE2000/001492
Other languages
English (en)
French (fr)
Other versions
WO2000072360A2 (de
Inventor
Jenoe Tihanyi
Original Assignee
Infineon Technologies Ag
Jenoe Tihanyi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Jenoe Tihanyi filed Critical Infineon Technologies Ag
Publication of WO2000072360A2 publication Critical patent/WO2000072360A2/de
Publication of WO2000072360A3 publication Critical patent/WO2000072360A3/de
Priority to US10/017,638 priority Critical patent/US6541804B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Die Erfindung betrifft einen junctionisolierten Lateral-MOSFET für High-/Low-Side-Schalter, bei dem sich zwischen einer n-leitenden Source-Zone (2) und einer n-leitenden Drain-Zone (3) eine p-leitende Wand (4) zusammen mit der Source-Zone (2) und der Drain-Zone (3) bis zu einem p-leitenden Substrat (1) erstreckt, wobei die Source-Zone (2) und die Drain-Zone (3) durch ein p-leitendes Gebiet (5) umgeben sind.
PCT/DE2000/001492 1999-05-21 2000-05-12 Junctionisolierter lateral-mosfet für high-/low-side-schalter WO2000072360A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/017,638 US6541804B2 (en) 1999-05-21 2001-12-18 Junction-isolated lateral MOSFET for high-/low-side switches

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19923466A DE19923466B4 (de) 1999-05-21 1999-05-21 Junctionsisolierter Lateral-MOSFET für High-/Low-Side-Schalter
DE19923466.3 1999-05-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/017,638 Continuation US6541804B2 (en) 1999-05-21 2001-12-18 Junction-isolated lateral MOSFET for high-/low-side switches

Publications (2)

Publication Number Publication Date
WO2000072360A2 WO2000072360A2 (de) 2000-11-30
WO2000072360A3 true WO2000072360A3 (de) 2001-07-19

Family

ID=7908826

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001492 WO2000072360A2 (de) 1999-05-21 2000-05-12 Junctionisolierter lateral-mosfet für high-/low-side-schalter

Country Status (3)

Country Link
US (1) US6541804B2 (de)
DE (1) DE19923466B4 (de)
WO (1) WO2000072360A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1162664A1 (de) 2000-06-09 2001-12-12 Motorola, Inc. Laterale Halbleiteranordnung mit niedrigem Einschaltwiderstand und Verfahren zu deren Herstellung
DE10137676B4 (de) * 2001-08-01 2007-08-23 Infineon Technologies Ag ZVS-Brückenschaltung zum entlasteten Schalten
DE10255359B4 (de) * 2002-11-27 2008-09-04 Infineon Technologies Ag Transistor mit Füllbereichen im Source- und/oder Draingebiet
CN1333472C (zh) * 2005-04-04 2007-08-22 江苏奥雷光电有限公司 大功率发光二极管荧光粉固化工艺
US7420248B2 (en) * 2005-08-25 2008-09-02 International Business Machines Corporation Programmable random logic arrays using PN isolation
US8354698B2 (en) * 2010-01-28 2013-01-15 System General Corp. VDMOS and JFET integrated semiconductor device
US9281748B2 (en) 2012-03-02 2016-03-08 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter
US8901897B2 (en) 2012-03-02 2014-12-02 International Business Machines Corporation Operating a DC-DC converter
US9236347B2 (en) 2013-10-09 2016-01-12 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating and manufacturing a DC-DC converter
US9219422B1 (en) 2014-08-21 2015-12-22 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter including a coupled inductor formed of a magnetic core and a conductive sheet
US9379619B2 (en) 2014-10-21 2016-06-28 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Dividing a single phase pulse-width modulation signal into a plurality of phases
US9618539B2 (en) 2015-05-28 2017-04-11 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Sensing current of a DC-DC converter
EP3358626B1 (de) * 2017-02-02 2022-07-20 Nxp B.V. Verfahren zur herstellung einer halbleiterschaltvorrichtung
DE112018006921T5 (de) * 2018-01-22 2020-10-01 Sumitomo Electric Industries, Ltd. Siliziumkarbid-Halbleiterbauelement

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649886A (en) * 1967-11-21 1972-03-14 Philips Corp Semiconductor device having a semiconductor body of which a surface is at least locally covered with an oxide film and method of manufacturing a planar semiconductor device
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
US5348215A (en) * 1992-11-04 1994-09-20 Kevin Rafferty Method of bonding hard metal objects
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
DE19604044A1 (de) * 1996-02-05 1997-08-14 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
US5726469A (en) * 1994-07-20 1998-03-10 University Of Elec. Sci. & Tech. Of China Surface voltage sustaining structure for semiconductor devices
US5831320A (en) * 1995-12-02 1998-11-03 Lg Semicon Co., Ltd. High voltage metal oxide silicon field effect transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
DE19748523C2 (de) * 1997-11-03 1999-10-07 Siemens Ag Halbleiterbauelement, Verfahren zum Herstellen eines derartigen Halbleiterbauelementes und Verwendung des Verfahrens
KR100273291B1 (ko) * 1998-04-20 2001-01-15 김영환 모스 전계 효과 트랜지스터의 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649886A (en) * 1967-11-21 1972-03-14 Philips Corp Semiconductor device having a semiconductor body of which a surface is at least locally covered with an oxide film and method of manufacturing a planar semiconductor device
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
US5348215A (en) * 1992-11-04 1994-09-20 Kevin Rafferty Method of bonding hard metal objects
US5726469A (en) * 1994-07-20 1998-03-10 University Of Elec. Sci. & Tech. Of China Surface voltage sustaining structure for semiconductor devices
US5831320A (en) * 1995-12-02 1998-11-03 Lg Semicon Co., Ltd. High voltage metal oxide silicon field effect transistor
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
DE19604044A1 (de) * 1996-02-05 1997-08-14 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ROSSEL P: "M.O.S. TECHNOLOGIES FOR SMART POWER AND HIGH-VOLTAGE CIRCUITS", ONDE ELECTRIQUE,FR,EDITIONS CHIRON S.A. PARIS, vol. 67, no. 6, 1 November 1987 (1987-11-01), pages 58 - 69, XP000111247, ISSN: 0030-2430 *

Also Published As

Publication number Publication date
US20020096697A1 (en) 2002-07-25
WO2000072360A2 (de) 2000-11-30
DE19923466A1 (de) 2000-11-30
DE19923466B4 (de) 2005-09-29
US6541804B2 (en) 2003-04-01

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