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US6734697B1 - Die location on ungrounded wafer for back-side emission microscopy - Google Patents

Die location on ungrounded wafer for back-side emission microscopy Download PDF

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US6734697B1
US6734697B1 US10/289,074 US28907402A US6734697B1 US 6734697 B1 US6734697 B1 US 6734697B1 US 28907402 A US28907402 A US 28907402A US 6734697 B1 US6734697 B1 US 6734697B1
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wafer
die
biased voltage
recited
photon emission
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US20040085083A1 (en
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Kevan Tan
Steve Hsiung
Joe Luo
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Bell Semiconductor LLC
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LSI Logic Corp
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Assigned to BELL SEMICONDUCTOR, LLC, HILCO PATENT ACQUISITION 56, LLC, BELL NORTHERN RESEARCH, LLC reassignment BELL SEMICONDUCTOR, LLC RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: CORTLAND CAPITAL MARKET SERVICES LLC
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Definitions

  • the present invention generally relates to methods of using an Infrared Emission Microscope (IREM) to analyze a die and specifically backside Photon Emissions Microscopy (backside PEM).
  • the present invention more specifically relates to a new application of using an Infrared Emission Microscope (IREM) to perform wafer-level backside analysis.
  • ICMOS ICs integrated circuits
  • Photon Emission Microscopy There are two major types of Photon Emission Microscopy (PEM): Frontside Photon Emission Microscopy that detects photon emerging from frontside of a die, and Backside Photon Emission Microscopy that detects photons passing through the silicon substrate and emerging from the backside of a die.
  • PEM Photon Emission Microscopy
  • Frontside Photon Emission Microscopy As a fault location technique is being used less and less.
  • Silicon allows the transmission of photons with energies less than its indirect bandgap energy (1.12 eV ⁇ 1.107 ⁇ m wavelength for undoped silicon). By thinning heavily doped silicon substrates, and taking advantage of Silicon's transparency to certain ⁇ , backside Photon Emission Microscopy is possible
  • backside Photon Emission Microscopy is a straightforward procedure of biasing the device and collecting photons.
  • this task becomes complicated because there are the various dice on the reticle field and the numerous reticle fields on the wafer, and it is difficult to tell which die is the DUT (device under test) from the backside.
  • a new method for die location must be provided before wafer-level Backside PEM can be performed. An aspect of the present invention provides such a method.
  • a general object of an embodiment of the present invention is to provide a method for performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis.
  • PEM backside Photon Emission Microscopy
  • an embodiment of the present invention provides a method for performing backside Photon. Emission Microscopy (PEM) on wafer-level failure analysis, where the method provides that a die is located by applying reversed-biased voltage to the wafer and the backside of the wafer is observed. The die of interest will illuminate brightly, because of the electron-hole recombination from the reverse-biased protection diode.
  • PEM Emission Microscopy
  • FIG. 1 is a flow chart illustrating a method for performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis, where the method is in accordance with an embodiment of the present invention.
  • PEM photon Emission Microscopy
  • PEM Planar Electron Emission Microscopy
  • FIG. 1 illustrates the method in more detail.
  • a failing die is identified from the datalog of wafer sort.
  • the wafer is placed on the IREM stage for backside Photon Emission Microscopy (PEM) analysis.
  • PEM Photon Emission Microscopy
  • a portable optical microscope is placed on the IREM stage.
  • mechanical probes are placed on the Vdd-Vss probe pads, and the wafer is powered up by reverse-biased voltage.
  • the die of interest should illuminate brightly, because of the electron-hole recombination from the reverse-biased protection diode.
  • the DUT i.e., the die of interest
  • the current appropriate to the device technology is clamped.
  • photon emission acquisition is performed, such as for 20 seconds. If no emission is observed, the biased voltage is increased, or the biased direction is changed, and photon emission acquisition is re-tried.
  • Such a method of performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis is easy to perform and provides a low cost and time-saving way to accurately identify a die and acquire photon emission.
  • PEM backside Photon Emission Microscopy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

A method for performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis. The method provides that a die is located by applying reversed-biased voltage to wafer and the backside of the wafer is thereafter observed. The die of interest will illuminate brightly, because of the electron-hole recombination from the reverse-biased protection diode. Such a method is easy to perform and provides a low cost and time-saving way to accurately identify a die and acquire emission.

Description

BACKGROUND
The present invention generally relates to methods of using an Infrared Emission Microscope (IREM) to analyze a die and specifically backside Photon Emissions Microscopy (backside PEM). The present invention more specifically relates to a new application of using an Infrared Emission Microscope (IREM) to perform wafer-level backside analysis.
Infrared Emission Microscopes (IREMs) have been used in the semiconductor industry to locate hot carrier emission and thermal emission sites in CMOS ICs (integrated circuits). They monitor visible and near-infrared photon emissions from ICs where they are powered up or exercised, for the purpose of locating and characterizing defects. The photons emitted from transistors, pn-junctions and other photon-generating structures are collected during analysis.
There are two major types of Photon Emission Microscopy (PEM): Frontside Photon Emission Microscopy that detects photon emerging from frontside of a die, and Backside Photon Emission Microscopy that detects photons passing through the silicon substrate and emerging from the backside of a die. With the ever-increasing number and density of metal layers in today's process technology, Frontside Photon Emission Microscopy as a fault location technique is being used less and less. Silicon allows the transmission of photons with energies less than its indirect bandgap energy (1.12 eV∝1.107 μm wavelength for undoped silicon). By thinning heavily doped silicon substrates, and taking advantage of Silicon's transparency to certain λ, backside Photon Emission Microscopy is possible
At the die level, backside Photon Emission Microscopy (PEM) is a straightforward procedure of biasing the device and collecting photons. At wafer-level, this task becomes complicated because there are the various dice on the reticle field and the numerous reticle fields on the wafer, and it is difficult to tell which die is the DUT (device under test) from the backside. A new method for die location must be provided before wafer-level Backside PEM can be performed. An aspect of the present invention provides such a method.
OBJECTS AND SUMMARY
A general object of an embodiment of the present invention is to provide a method for performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis.
Briefly, and in accordance with at least one of the foregoing objects, an embodiment of the present invention provides a method for performing backside Photon. Emission Microscopy (PEM) on wafer-level failure analysis, where the method provides that a die is located by applying reversed-biased voltage to the wafer and the backside of the wafer is observed. The die of interest will illuminate brightly, because of the electron-hole recombination from the reverse-biased protection diode. Such a method is easy to perform and provides a low cost and time-saving way to accurately identify a die and acquire emission.
BRIEF DESCRIPTION OF THE DRAWINGS
The organization and manner of the structure and operation of the invention, together with further objects and advantages thereof, may best be understood by reference to the following description, taken in connection with the accompanying drawing, wherein FIG. 1 is a flow chart illustrating a method for performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis, where the method is in accordance with an embodiment of the present invention.
DESCRIPTION
While the invention may be susceptible to embodiment in different forms, there is shown in the drawings, and herein will be described in detail, a specific embodiment with the understanding that the present disclosure is to be considered an exemplification of the principles of the invention, and is not intended to limit the invention to that as illustrated and described herein.
As discussed above, at the die level, PEM is a straightforward task of biasing the device and collecting photons. But at wafer-level, this task is complicated because of the various dice on the reticle field, and the number of reticle fields on the wafer itself. To locate the die in a wafer before wafer-level Backside PEM can be performed is critical. An embodiment of the present invention provides a method for performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis, where the die is located by applying reversed-biased voltage to the wafer and then the wafer is observed. The die of interest will illuminate brightly, because of the electron-hole recombination from the reverse-biased protection diode.
FIG. 1 illustrates the method in more detail. As shown, first a failing die is identified from the datalog of wafer sort. Then, the wafer is placed on the IREM stage for backside Photon Emission Microscopy (PEM) analysis. Then, a portable optical microscope is placed on the IREM stage. Then, mechanical probes are placed on the Vdd-Vss probe pads, and the wafer is powered up by reverse-biased voltage. The die of interest should illuminate brightly, because of the electron-hole recombination from the reverse-biased protection diode. Once the die is found, the DUT (i.e., the die of interest) is powered up by forward-biased voltage and the current appropriate to the device technology is clamped. Then, photon emission acquisition is performed, such as for 20 seconds. If no emission is observed, the biased voltage is increased, or the biased direction is changed, and photon emission acquisition is re-tried.
Such a method of performing backside Photon Emission Microscopy (PEM) on wafer-level failure analysis is easy to perform and provides a low cost and time-saving way to accurately identify a die and acquire photon emission.
While an embodiment of the present invention is shown and described, it is envisioned that those skilled in the art may devise various modifications of the present invention without departing from the spirit and scope of the appended claims.

Claims (12)

What is claimed is:
1. A method for performing backside Photon Emission Microscopy (PEM) on a wafer, said method comprising applying reversed-biased voltage to the wafer; observing the wafer to identify a die on the wafer which illuminates as a result of the reversed-biased voltage being applied; and after applying reverse-biased voltage to the wafer and observing the wafer to identify the die on the wafer which illuminates, powering up the die by forward-biased voltage.
2. A method as recited in claim 1, further comprising identifying a failing die from a datalog of sort.
3. A method as recited in claim 1, further comprising placing the wafer on an IREM stage and placing a portable optical microscope on the IREM stage.
4. A method as recited in claim 1, further comprising placing mechanical probes on Vdd-Vss probe pads on the wafer.
5. A method as recited in claim 4, further comprising clamping appropriate current while powering up the die by forward-biased voltage.
6. A method as recited in claim 4, further comprising acquiring photon emission while powering up the die by forward-biased voltage.
7. A method as recited in claim 6, further comprising increasing the biased voltage and re-acquiring photon emission.
8. A method as recited in claim 6, further comprising changing the biased direction and re-acquiring photon emission.
9. A method for performing backside Photon Emission Microscopy (PEM) on a wafer, said method comprising identifying a failing die from a datalog of wafer sort, placing the wafer on an IREM stage, placing a portable optical microscope on the IREM stage, placing mechanical probes on Vdd-Vss probe pads on the wafer, powering up the wafer by applying reversed-biased voltage to the wafer observing the wafer to identify a die on the wafer which illuminates as a result of the reversed-biased voltage being applied; and after applying reverse-biased voltage to the wafer and observing the wafer to identify the die on the wafer which illuminates, powering up the die by forward-biased voltage.
10. A method as recited in claim 9, further comprising clamping appropriate current, and acquiring photon emission while powering up the die by forward-biased voltage.
11. A method as recited in claim 10, further comprising increasing the biased voltage and re-acquiring photon emission.
12. A method as recited in claim 10, further comprising changing the biased direction and re-acquiring photon emission.
US10/289,074 2002-11-06 2002-11-06 Die location on ungrounded wafer for back-side emission microscopy Expired - Lifetime US6734697B1 (en)

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ES2712076T3 (en) 2009-12-18 2019-05-09 Isra Vision Graphikon Gmbh Procedure and device to find defective points in semiconductor construction elements
DE102016114459A1 (en) 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Method and device for measuring a plurality of semiconductor chips in a wafer composite

Citations (11)

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US4680616A (en) * 1986-05-09 1987-07-14 Chronar Corp. Removal of defects from semiconductors
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US5051738A (en) * 1989-02-27 1991-09-24 Revtek Inc. Imaging system
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