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US5311221A - Electromagnetic wave modulator equipped with coupled quantal wells, and application to an electromagnetic wave detector - Google Patents

Electromagnetic wave modulator equipped with coupled quantal wells, and application to an electromagnetic wave detector Download PDF

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US5311221A
US5311221A US07/364,680 US36468089A US5311221A US 5311221 A US5311221 A US 5311221A US 36468089 A US36468089 A US 36468089A US 5311221 A US5311221 A US 5311221A
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well
quantal
wave
modulated
energy
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Inventor
Nakita Vodjdani
Claude Weisbuch
Borge Vinter
Julien Nagle
Michel Papuchon
Jean-Paul Pocholle
Dominique Delacourt
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Thales SA
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Thomson CSF SA
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure

Definitions

  • the invention concerns an electromagnetic wave modulator equipped with coupled quantal wells.
  • the wave to be modulated may be propagated freely or it may be guided.
  • the invention is applicable, in particular, to the modulation of infrared waves.
  • Some modulators employ injection in a semi-conducting free-carrier structure.
  • the transmission band of these modulators is limited by their fairly long recombination time, which may be the result of a radiative and/or non-radiative interaction.
  • Pockels-effect modulators are also well known. These devices use the change in the index of refraction of the semi-conducting material under the effect of an electrical field. They are, therefore, "electrooptical" modulators. Their index variation is, however, very low, resulting in the fact that, to obtain a significant effect, use must be made of devices which have a considerable length of interaction, and which are, therefore, very large. Although the electrooptical effect is quite fast, since its characteristics times are on the order of several femto-seconds, the desire to obtain a significant depth of modulation will dictate that the size of the device condition the transmission band of the modulator. Furthermore, this is especially critical in the infrared range (in relation to the visible and near-infrared ranges) because the size of the modulator must also increase as the wavelength increases.
  • modulators use the principle of electroabsorption (Franz-Keldysh effect). In this case, an electric control field is applied which, when substantially raised, shifts the absorption threshold of the material (in terms of frequency).
  • an electric control field is applied which, when substantially raised, shifts the absorption threshold of the material (in terms of frequency).
  • use must be made of semi-conducting materials possessing a forbidden-band energy very close to the energy of the band to be modulated. For example, in the case of an infrared wave having a wavelength of 10 micrometers, materials alloys II-II of Mendeleev's table are used. However, the industrial working of these materials is difficult to master and, given their slight forbidden-band energy gap, they are very sensitive to manufacturing imperfections.
  • the means of control of the modulation is based on a wave-pump whose amplitude is modulated and which possesses a frequency greater than that of the wave to be modulated.
  • the wave-pump serves to occupy a discrete level of the quantal well.
  • the absorption of the wave to be modulated thus takes place by means of a transition from the electrons (or holes) of this first discrete level of the quantal well to another discrete level. In this way, control is effected over the absorption of a wave whose frequency is equal to the difference between the energies of the two discrete levels divided by Planck's constant.
  • a modulator of this kind may incorporate a structure having a quantal well (1, 2, 3) whose optical characteristics are modified by an optical pumping achieved by means of a control wave (h. ⁇ 1) belonging to the middle infrared band.
  • the command wave h. ⁇ 1 is modulated by means of a conventional modulator.
  • the transmission band of these modulators is limited either by the transmission band of the wave-pump, or by the recombination of the photo-created carriers at the first discrete energy level of the quantal well.
  • short life-spans of the carriers is desirable.
  • the shorter the life-span of the carriers the shallower the depth of modulation. It appears, therefore, ultimately that today, it has not yet been possible to obtain optical modulators which are completely satisfactory, especially when dealing with infrared light.
  • a first purpose of the invention consists in supplying an optical modulator in which a spatial separation of electrons and of holes in two different quantal wells has been achieved, thus making it possible to increase the life of the electron-hole pairs. This makes it, therefore, possible to reduce the power of the wave-pump required for a given intra-band absorption.
  • Another purpose of the invention is to make available a modulator which may be transparent, or, on the contrary, opaque in normal operation for the electromagnetic wave to be modulated.
  • a third purpose of the invention is the creation of a modulator which may be controlled by the electric field.
  • the modulator can also be controlled by the coexistence of a wave-pump and an electric field, it may be used as an AND element or in applications of the "image-recognition" type.
  • the proposed modulator is of the kind incorporating:
  • the semi-conducting structure has another series of alternating layers in proximity to the first, which makes up a second quantal well coupled to the first quantal well through a barrier layer, which is slender enough to ensure a strong coupling; furthermore, the means of control incorporate means for the creation of an electric field, perpendicular to said barrier, on the structure when the control is given, thereby making possible the increase of life-span of the electron-hole pairs created.
  • the modulator is made distinctive further by the fact that the wave to be modulated is subjected to intraband absorption, i.e., the wave is created between a first and second level of energy located on the same side of the forbidden band of one of the quantal wells.
  • the second quantal well possesses a forbidden-band energy gap which is greater than that of the first well.
  • the means for excitation create a wave-pump on the semi-conducting structure; this wave-pump is capable of populating a first level of energy of the first quantal well with electron-hole pairs, while the application of the electric field transfers electrons form the first quantal well to the second, while said intraband absorption takes place in the second quantal well.
  • One especially interesting aspect of the invention thus lies in the fact that the means of excitation may be made active on command. This makes possible an "AND" control function, as well as image-recognition operations.
  • one of the quantal wells is doped. Excitation occurs by means of the application of an electric field which transfers electrons from one of the quantal wells to the other, in this latter of which the above-mentioned intraband absorption takes place.
  • the modulator is normally transparent for the wave to be modulated. In the contrary case, in which the second well is doped, the modulator is normally opaque for the wave to be modulated. In either case, the modulator may, furthermore, incorporate ohmic contacts on the layers located on both sides of the quantal wells. The current thus captured enables the modulator to function as a light detector for the wave to be modulated.
  • the wave to be modulated is subjected to interband absorption between two levels of energy situated on either side of the forbidden band of one of the quantal wells.
  • the second quantal well possesses a forbidden-band energy gap which is greater than that of the first.
  • modulators according to the present invention may receive a free wave to be modulated or a guided wave, in accordance with one or two dimensions.
  • the pattern of two quantal wells, described above, may be repeated several times.
  • modulators according to the present invention may operate in the infrared range over virtually the entire band, especially for wave-lengths of 10 micrometers of more.
  • FIG. 1 is an embodiment of a modulator according to conventional art
  • FIG. 2 is a skeleton diagram of a modulator according to the present invention.
  • FIG. 3 is a schematic diagram of levels of energies which makes it possible to better understand the operation of a device according to the present invention
  • FIG. 4, 5, and 6 are energy and wave-function diagrams describing more precisely the operation of an embodiment of the device according to the present invention.
  • FIG. 7 illustrates an embodiment of the invention modulator
  • FIG. 8 is a variant embodiment of the modulator in FIG. 6;
  • FIG. 9 is an embodiment of the invention modulator functioning as a guided optics apparatus
  • FIG. 10 is a variant embodiment of the modulators in FIGS. 7 to 9.
  • FIG. 11 is an embodiment of an optical detector according to the invention.
  • a semi-conducting structure according to the invention is delimited by a semi-conducting substrate S, on which a intermediate layer CII is laid down by means of epitaxy; this layer is followed by an active layer CP1, a barrier layer CB, an active layer CP2, and an intermediate layer CI2.
  • the semi-conducting material used for the structure is, preferably, based on the semi-conductors found in columns III and V of Mendeleev's table or, on their alloys, especially alloys combining aluminum, gallium, or indium on the one hand, and phosphorus, arsenic, or antimony on the other.
  • the alloys may be binary, ternary, or quaternary.
  • FIG. 2 illustrates two electrodes E1 and E2, located, for example, one on the accessible side of the substrate and the other on the last layer set opposite to it, which is here supposed to be the intermediate layer CI2.
  • the application of voltage between the electrodes E1 and E2 using the means of control MC makes it possible to generate, upon command, an electric field perpendicular to the various layers, and in particular to the barrier layer CB.
  • the fashioning of structures incorporating quantal wells is, in general, well known.
  • the substrate is, or is not, doped.
  • the first intermediary layer C! has a composition which endows it with a strong forbidden-band energy gap (often called “gap" for short in English terminology).
  • the abbreviation "forbidden-band gap” will be used.
  • the CP1 layer which will be used to delimit a first well, possesses to weak forbidden-band gap.
  • the barrier layer CB possesses once again a strong forbidden-band gap.
  • the second well layer CP2 has a medium or weak forbidden-band gap, according to the specific embodiment.
  • the insulating layer CI2 has once again a strong forbidden-band gap.
  • the thicknesses of the layers are of several tens of angstroms, typically about 50 angstroms. The thicknesses of the layers may be different, depending on the desired properties of the structure.
  • the barrier layer CB has a thickness which is slight compared with those of layers CI1 and CI2. It may be observed that their forbidden-band energies may be different (for CB, CI1, and CI2).
  • the structure shown in FIG. 2 may be taken as a pattern: the fundamental pattern is made up of the alternation of an intermediate layer CI1, of an well layer (CP1), of a barrier layer (CB), and of an well layer (CP2); this pattern is repeated along the epitaxial growth axis.
  • a structure of this kind will possess advantageous properties, from the moment when electron-hole pairs populating certain energy levels of one of the quantal wells are created for it.
  • FIG. 3 illustrates schematically the case in which the layers CP1 and CP2 possess different forbidden-band gaps.
  • the curves Bv and Bc designate, respectively, the upper limit of the valence band and the lower limit of the conduction band.
  • the forbidden-band gap is delimited between these two curves.
  • electrons and holes may take on only certain discrete levels of energy.
  • FIG. 3 shows the first level h0 for light holes, followed by other levels.
  • a first level of energy E0 followed by a second E1 and a third E2 are distinguished for both wells.
  • each level of energy corresponds a wave function which designates the probability of the spatial presence of an electron or a hole for this level of energy.
  • the wave functions W0, W1, and W2 are shown diagrammatically in FIG. 3.
  • W0 is located mainly in the first well, while W1 and W2 have a maximum probability of presence in the second well.
  • a minimal energy jump G1 may be delimited between the energy level h0 for heavy holes and the energy level E0 for electrons.
  • a minimal energy jump G2 is located between the energy level h1 for the heavy holes and the energy level E1 for the corresponding electrons.
  • a third energy jump G3 may be delimited in a slightly different manner between the discrete level E1 and the discrete level E2 for the electrons.
  • FIG. 3 shows the first family of modulators, in which intraband absorption will be used. More precisely, FIG. 3 illustrates the subfamily in which the gaps G1 and G2 are not the same for the two quantal wells, these not being intentionally doped.
  • FIG. 7 shows an embodiment of the modulator according to the invention.
  • Electrodes E1 and E2 connected to a voltage generator MC and arranged one on the lower surface of the substrate S and the other on the outer surface of the intermediate layer CI2, make it possible to generate an electric control field on the modulator.
  • a light source ME transmits a light wave having a frequency f1 linked to the length of the forbidden band G1 of the first quantal well by the equation G1 ⁇ hf1, where h is Planck's constant.
  • the first quantum well CP1 has only one quantal electron level, so that, in the absence of the generation of an electric field by electrodes E1 and E2, the modulator may be transparent to the wave to be modulated.
  • the modulator may also function by means of a first quantal well CP1 having two energy levels, and may be transparent to the wave to be modulated in the absence of an electric field; however, the difference between these two energy levels must not be equal to the difference of the energy levels of the second well, which corresponds to the wave to be modulated.
  • composition and size of the layers CP1 and CP2, which delimit the quantal wells, are, therefore, such that G1 is less than G2.
  • the electronic levels E0, E1, and E2 are empty.
  • the modulator is inactive, i.e., it cannot absorb the wave to be modulated OM.
  • the command mechanism MC in FIG. 2 is actuated so as to generate an electric field longitudinal to the structure (i.e., perpendicular to the barrier layer CB), the levels E0 and E1 of the wells CP1 and CP2 may be "brought into resonance". In other words, the discrete energy levels of the well CP2 will be lowered in relation to those of well CP1.
  • the electric field may thus be adjusted in such a way that the wave function of level E0 is localized in the well CP2, as shown in FIG. 6.
  • FIGS. 4, 5, and 6 illustrate more precisely the behavior of the two wells.
  • the sites of the well CP1, of the barrier CB, and of the well CP2 may be recognized.
  • the abscissae represent positions measured in hundreds of angstroms.
  • the ordinates represent energy measured in hundreds of milli-electronvolts and the various wave functions squared so as to be brought up to a probability of presence.
  • the ground line E0 marks the first level of energy for the electrons; the dotted line FL marks the Fermi level; the reference line E1, the second energy level for electrons, and the reference line E2, the third level of energy for the electrons.
  • the wave function W0 for electrons of the corresponding level is superimposed on the line E0.
  • this wave function has a greater probability of the presence of electrons in the well CP1, marking the presence of electrons in this well.
  • the wave function of level E0 comes to be located progressively in the second well, as may be seen in FIGS. 5, then 6. Transitions then become possible in the well CP2 between energies E0 and E2, given the energy jump G3 to which the absorption of a wave having the above-mentioned frequency f3 corresponds.
  • the commutation of the modulation takes place by means of a control through the electric field.
  • the transmission band of this type of modulator is, therefore, limited by the speed with which the electric field is established.
  • the interaction distances may be slight, typically several microns, a distance which may be compared to the several millimeters required for the modulators based on the Pockels effect.
  • one of the wells is doped; under the effect of the generation of an electric field, operation is identical to that described above.
  • the modulator will normally be transparent (without generation of an electric field).
  • the modulator will normally be opaque for the frequency f3 to be modulated.
  • the structure of the layers of the modulator, according to this variant, will be identical to that shown in FIG. 7.
  • the frequencies used are associated with interband transitions, i.e., between the conduction band and the valence band.
  • the wave to be modulated will be a wave having a frequency f1 corresponding to the forbidden band G1, or slightly greater.
  • the dual command using a wave-pump having frequency f2 and the electric field is maintained.
  • the advantage of the coupled well thus resides in the increase in life-span of the carriers, i.e., electron-hole pairs. The result is a decrease in the power of the wave-pump, which is required to achieve saturation of the absorption at frequency f1 associated with G1.
  • modulation at frequency f1 occurs by means of the Stark effect; the advantage of the well system lies in increasing the Stark effect.
  • the wave hV3 to be modulated is inclined in relation to the upper surface of the device.
  • one of the components of the electric field of the wave to be modulated must be polarized along an axis parallel to the OZ axis, this OZ axis being the growth axis of the layers CI1 to CI2 which make up the modulator. Therefore, one of the components of the wave to be modulated should be positioned along an axis other than the OZ axis.
  • the two waves h ⁇ 1 and h ⁇ 3 are parallel to the plane of the layers of the modulator, more precisely, parallel to the OY axis.
  • any other type of orientation of the directions of the waves h ⁇ 1 and h ⁇ 3 may be established, either between them or in relation to the plane of the layers CI1 and CI2 of the modulator.
  • the electrode E2 In the event that the wave to be modulated or the pumping wave arrives in relation to the upper surface of the modulator, the electrode E2, at least, must be semi-transparent to the wave or waves which pass through it.
  • the wave to be modulated may be either free or guided by containment along one dimension, or guided along two dimensions.
  • FIG. 9 represents an embodiment operating by guidance.
  • the intermediate layer CI2 has, at the top, a guiding portion G oriented, for example, along the OY axis.
  • the embodiment of this guide is well-known within the technology, and the calculation of a guide having the dimensions required to obtain proper guidance is well known.
  • the electrode E2 covers only the guidance portion G; however, according to other embodiments, it may also cover the entirety of layer CI2.
  • the wave to be modulated is oriented along the OY axis, but it could be oriented differently.
  • the direction of polarization of this wave must be oriented along the axis of growth OZ.
  • a substrate was chosen having an index of refraction which is preferably lower than the index of the guide.
  • the substrate In the case of operation by means of transmission through the modulator, i.e., of a mode of operation in which the wave to be modulated passes into the modulator through its upper side, it is possible that the substrate has a certain absorptive capacity which could hinder the operation of the device.
  • the substrate would be made thinner. As shown, for example, in FIG. 10, a cavity made in the thickness of the substrate reduces the optical path in the substrate material.
  • modulators are illustrated in which a pumping wave makes possible the populating of the energy level of the first quantal wells CP1 with electrons. This populating with electrons may also be achieved by doping. In this case, the ME pumping-wave source is not useful, and the system remains similar to those shown in the Figures.
  • the layer CI2 performs the function of layer CI1, and would then be followed by another series CP1, CB, CP2, CI2, and so one, as required.
  • the invention structure may be applied to the construction of an electromagnetic wave detector.
  • ohmic contacts R1, R2 are provided on the external layers of the device, as shown in FIG. 11.
  • a current detector DE is, in this case, connected to the ohmic contacts, enabling the invention device to act as an electromagnetic wave detector.
  • This device may then be used as an apparatus for the recognition of images by making it possible for the pump wave and the wave to be modulated to perform the "AND" function.
  • the integration of a modulator and an infrared detector on the same semi-conducting structure may be contemplated; this arrangement may hold an advantage for certain applications.
  • FIG. 11 represents one embodiment of a detector of this kind. As an example, a detector operating in the guided mode is shown. The electrode covers only a portion of the guide.
  • An ohmic contact R1 is provided on another part of the guide.
  • An additional ohmic contact R2 is also installed on the free surface of the substrate S.
  • a DE detector is connected between the two ohmic contacts R1 and R2, and makes possible the detection of a current created by the passage of an h 3 wave.
  • the detector shown in FIG. 11 operates in the guided optics mode. It may also operate in a non-guided optic modes, by adapting the modulator in FIG. 7 by providing at least one ohmic contact R1 on the surface of layer CI2. This detector may then serve as an image detector, by illuminating the upper surface of lay CI2 using a pump wave (h ⁇ 1) and a wave to be modulated. Each wave transmits an image, and the detector then makes it possible to identify them.
  • the detector maybe made by making use of the variant embodiment of the invention, in which the populating with electrons of the outer energy level of the first quantal well is obtained by means of doping. Therefore, the source ME is no longer useful.
  • the detector operates by detecting a fixed level of the wave to be modulated.

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US07/364,680 1988-05-11 1989-05-11 Electromagnetic wave modulator equipped with coupled quantal wells, and application to an electromagnetic wave detector Expired - Lifetime US5311221A (en)

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FR8806346A FR2637092B1 (fr) 1988-05-11 1988-05-11 Modulateur d'onde electromagnetique a puits quantiques couples, et application a un detecteur d'onde electromagnetique
FR8806346 1988-05-11

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CA (1) CA1314615C (de)
DE (1) DE3915429A1 (de)
FR (1) FR2637092B1 (de)
GB (1) GB2227571B (de)
IT (1) IT1235751B (de)
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US5973339A (en) * 1996-11-15 1999-10-26 The Furukawa Electric Co. Ltd. Semiconductor photodetector having an optical attenuator
US6081631A (en) * 1997-01-23 2000-06-27 Alcatel Modulation method and semiconductor optical modulator
US6236670B1 (en) 1997-04-01 2001-05-22 Thomson-Csf Laser comprising stacked laser diodes produced by epitaxial growth inserted between two bragg mirrors
US6307623B1 (en) 1998-10-06 2001-10-23 Thomson-Csf Device for harmonizing a laser emission path with a passive observation path
US6374003B1 (en) * 1997-12-19 2002-04-16 Intel Corporation Method and apparatus for optically modulating light through the back side of an integrated circuit die using a plurality of optical beams
CN103777377A (zh) * 2012-10-23 2014-05-07 三菱电机株式会社 半导体光调制器
JP2018107278A (ja) * 2016-12-26 2018-07-05 住友電気工業株式会社 光スイッチ及び光スイッチ装置

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FR2662855A1 (fr) * 1990-06-05 1991-12-06 Thomson Csf Detecteur d'onde electromagnetique.
GB2248117A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated An optical device
DE69115205T2 (de) * 1990-09-24 1996-06-27 Philips Electronics Nv Optisch schaltbare Vorrichtung.
JPH04163967A (ja) * 1990-10-27 1992-06-09 Canon Inc 光デバイス
FR2675949B1 (fr) * 1991-04-25 1993-07-09 Thomson Csf Modulateur d'ondes et detecteur optique a puits quantiques.
EP0532204A1 (de) * 1991-09-05 1993-03-17 AT&T Corp. Element mit einer elektro-optischen Quantum-Wellvorrichtung
FR2682477B1 (fr) * 1991-10-11 1994-04-15 Thomson Csf Spectrometre.
GB2307304B (en) * 1995-11-16 2000-04-05 Toshiba Cambridge Res Center Optical device

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US5973339A (en) * 1996-11-15 1999-10-26 The Furukawa Electric Co. Ltd. Semiconductor photodetector having an optical attenuator
US5969375A (en) * 1996-12-20 1999-10-19 Thomson-Csf Infrared detector with non-cooled quantum well structure
US6081631A (en) * 1997-01-23 2000-06-27 Alcatel Modulation method and semiconductor optical modulator
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US6307623B1 (en) 1998-10-06 2001-10-23 Thomson-Csf Device for harmonizing a laser emission path with a passive observation path
CN103777377A (zh) * 2012-10-23 2014-05-07 三菱电机株式会社 半导体光调制器
JP2018107278A (ja) * 2016-12-26 2018-07-05 住友電気工業株式会社 光スイッチ及び光スイッチ装置

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FR2637092A1 (fr) 1990-03-30
SE8901670D0 (sv) 1989-05-10
SE8901670L (sv) 1990-05-21
FR2637092B1 (fr) 1991-04-12
IT1235751B (it) 1992-09-24
GB2227571A (en) 1990-08-01
NL8901141A (nl) 1990-04-02
CA1314615C (fr) 1993-03-16
GB2227571B (en) 1992-11-18
GB8910492D0 (en) 1990-04-25
IT8967322A0 (it) 1989-05-04
DE3915429A1 (de) 1990-07-05

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